WO2006076044A3 - Nanostructure-based transistor - Google Patents
Nanostructure-based transistor Download PDFInfo
- Publication number
- WO2006076044A3 WO2006076044A3 PCT/US2005/027336 US2005027336W WO2006076044A3 WO 2006076044 A3 WO2006076044 A3 WO 2006076044A3 US 2005027336 W US2005027336 W US 2005027336W WO 2006076044 A3 WO2006076044 A3 WO 2006076044A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- catalyst region
- electrodes
- nanostructure
- nanostructures
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
Abstract
Nanotube-based transistors and methods for implementing such nanotube-based transistors are provided. More particularly, systems and methods are provided for implementing a first electrode (105) that subsumes a catalyst region (102) from which nanostructures, such as nanotubes (103), are grown, and an annular second electrode (107) around the first electrode (105), wherein at least one of the nanostructures couples the first and second electrodes (105, 107). According to one embodiment, a catalyst region (102) is disposed on a substrate (101), and the catalyst region (102) may be patterned into a desired shape/size. Carbon nanotubes (103) are grown from the catalyst region (102). First and second electrodes (105, 107) are then deposited, where the first electrode (105) covers the catalyst region (102) and the annular second electrode (107) is disposed around the first electrode (105). In one embodiment, the second electrode (107) is circular and concentric with the first electrode (105). At least one of the carbon nanotubes (103) couples the first and second electrodes (105, 107).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59263004P | 2004-07-30 | 2004-07-30 | |
US60/592,630 | 2004-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006076044A2 WO2006076044A2 (en) | 2006-07-20 |
WO2006076044A3 true WO2006076044A3 (en) | 2006-12-28 |
Family
ID=36678049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/027336 WO2006076044A2 (en) | 2004-07-30 | 2005-07-29 | Nanostructure-based transistor |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2006076044A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008018726A1 (en) * | 2006-08-07 | 2008-02-14 | Seoul National University Industry Foundation | Nanostructure sensors |
WO2013006027A1 (en) * | 2011-07-01 | 2013-01-10 | Mimos Berhad | Method for use in fabricating nanomaterials based devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020014667A1 (en) * | 2000-07-18 | 2002-02-07 | Shin Jin Koog | Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
US20030214054A1 (en) * | 2002-05-20 | 2003-11-20 | Fujitsu Limited | Electron device and process of manufacturing thereof |
JP2004067413A (en) * | 2002-08-02 | 2004-03-04 | Nec Corp | Catalyst carrying substrate, method for growing carbon nanotube by using the same, and transistor using carbon nanotube |
US20040238887A1 (en) * | 2001-07-05 | 2004-12-02 | Fumiyuki Nihey | Field-effect transistor constituting channel by carbon nano tubes |
-
2005
- 2005-07-29 WO PCT/US2005/027336 patent/WO2006076044A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020014667A1 (en) * | 2000-07-18 | 2002-02-07 | Shin Jin Koog | Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
US20040238887A1 (en) * | 2001-07-05 | 2004-12-02 | Fumiyuki Nihey | Field-effect transistor constituting channel by carbon nano tubes |
US20030214054A1 (en) * | 2002-05-20 | 2003-11-20 | Fujitsu Limited | Electron device and process of manufacturing thereof |
JP2004067413A (en) * | 2002-08-02 | 2004-03-04 | Nec Corp | Catalyst carrying substrate, method for growing carbon nanotube by using the same, and transistor using carbon nanotube |
Also Published As
Publication number | Publication date |
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WO2006076044A2 (en) | 2006-07-20 |
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Legal Events
Date | Code | Title | Description |
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121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
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122 | Ep: pct application non-entry in european phase |