WO2005073485A8 - Aktive zonen aufweisende halbleiterstruktur - Google Patents

Aktive zonen aufweisende halbleiterstruktur Download PDF

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Publication number
WO2005073485A8
WO2005073485A8 PCT/EP2005/000759 EP2005000759W WO2005073485A8 WO 2005073485 A8 WO2005073485 A8 WO 2005073485A8 EP 2005000759 W EP2005000759 W EP 2005000759W WO 2005073485 A8 WO2005073485 A8 WO 2005073485A8
Authority
WO
WIPO (PCT)
Prior art keywords
active zones
azn
active
semiconductor structure
zones
Prior art date
Application number
PCT/EP2005/000759
Other languages
English (en)
French (fr)
Other versions
WO2005073485A2 (de
WO2005073485A9 (de
WO2005073485A3 (de
WO2005073485B1 (de
Inventor
Werner Bensch
Original Assignee
Rwe Space Solar Power Gmbh
Werner Bensch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rwe Space Solar Power Gmbh, Werner Bensch filed Critical Rwe Space Solar Power Gmbh
Priority to EP05701194A priority Critical patent/EP1709693B1/de
Priority to JP2006550093A priority patent/JP4718492B2/ja
Priority to US10/586,946 priority patent/US7692202B2/en
Publication of WO2005073485A2 publication Critical patent/WO2005073485A2/de
Publication of WO2005073485A8 publication Critical patent/WO2005073485A8/de
Publication of WO2005073485A9 publication Critical patent/WO2005073485A9/de
Publication of WO2005073485A3 publication Critical patent/WO2005073485A3/de
Publication of WO2005073485B1 publication Critical patent/WO2005073485B1/de
Priority to IL177112A priority patent/IL177112A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

Die Erfindung bezieht sich auf eine aktive Zonen aufweisende Halbleiterstruktur wie Leuchtdiode oder Photodiode (10, 16, 24, 26, 36, 46, 54, 68, 74, 80), umfassend ein Substrat (SUB) mit zumindest zwei aktiven Zonen (AZ1 - AZn), von denen jede eine Strahlung unterschiedlicher Wellenlänge emittiert oder absorbiert. Zur Realisierung einer Muli-Wavelenght-Diode ist vorgesehen, dass eine erste (untere) aktive Zone (AZ1) auf eine Oberfläche des Substrates (SUB) aufgewachsen ist, wobei ein oder mehrere weitere aktive Zonen (AZ1 - Azn) übereinander epitaktisch aufgewachsen sind und wobei die aktiven Zonen (AZ1 - AZn) über als niederohmige Widerstände dienende Tunneldioden (TD1 - TDn) von der unteren aktiven Zone (AZ1) bis zu einer oberen aktiven Zone (AZn) seriell verschaltet sind.
PCT/EP2005/000759 2004-01-29 2005-01-26 Aktive zonen aufweisende halbleiterstruktur WO2005073485A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP05701194A EP1709693B1 (de) 2004-01-29 2005-01-26 Lichtemittierende Zonen aufweisende Halbleiterstruktur mit Absorptionsschicht
JP2006550093A JP4718492B2 (ja) 2004-01-29 2005-01-26 活性領域を有する半導体構造
US10/586,946 US7692202B2 (en) 2004-01-29 2005-01-26 Semiconductor structure comprising active zones
IL177112A IL177112A (en) 2004-01-29 2006-07-26 A diode with multiple light-emitting arches containing active multifaceted regions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004004765A DE102004004765A1 (de) 2004-01-29 2004-01-29 Aktive Zonen aufweisende Halbleiterstruktur
DE102004004765.0 2004-01-29

Publications (5)

Publication Number Publication Date
WO2005073485A2 WO2005073485A2 (de) 2005-08-11
WO2005073485A8 true WO2005073485A8 (de) 2005-10-27
WO2005073485A9 WO2005073485A9 (de) 2005-11-24
WO2005073485A3 WO2005073485A3 (de) 2006-04-13
WO2005073485B1 WO2005073485B1 (de) 2006-05-11

Family

ID=34813058

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/000759 WO2005073485A2 (de) 2004-01-29 2005-01-26 Aktive zonen aufweisende halbleiterstruktur

Country Status (9)

Country Link
US (1) US7692202B2 (de)
EP (1) EP1709693B1 (de)
JP (1) JP4718492B2 (de)
CN (1) CN100468798C (de)
DE (1) DE102004004765A1 (de)
IL (1) IL177112A (de)
RU (1) RU2328795C2 (de)
TW (1) TWI340465B (de)
WO (1) WO2005073485A2 (de)

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