WO2005073485A3 - Aktive zonen aufweisende halbleiterstruktur - Google Patents
Aktive zonen aufweisende halbleiterstruktur Download PDFInfo
- Publication number
- WO2005073485A3 WO2005073485A3 PCT/EP2005/000759 EP2005000759W WO2005073485A3 WO 2005073485 A3 WO2005073485 A3 WO 2005073485A3 EP 2005000759 W EP2005000759 W EP 2005000759W WO 2005073485 A3 WO2005073485 A3 WO 2005073485A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- active zones
- azn
- active
- semiconductor structure
- zones
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05701194A EP1709693B1 (de) | 2004-01-29 | 2005-01-26 | Lichtemittierende Zonen aufweisende Halbleiterstruktur mit Absorptionsschicht |
JP2006550093A JP4718492B2 (ja) | 2004-01-29 | 2005-01-26 | 活性領域を有する半導体構造 |
US10/586,946 US7692202B2 (en) | 2004-01-29 | 2005-01-26 | Semiconductor structure comprising active zones |
IL177112A IL177112A (en) | 2004-01-29 | 2006-07-26 | A diode with multiple light-emitting arches containing active multifaceted regions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004004765A DE102004004765A1 (de) | 2004-01-29 | 2004-01-29 | Aktive Zonen aufweisende Halbleiterstruktur |
DE102004004765.0 | 2004-01-29 |
Publications (5)
Publication Number | Publication Date |
---|---|
WO2005073485A2 WO2005073485A2 (de) | 2005-08-11 |
WO2005073485A8 WO2005073485A8 (de) | 2005-10-27 |
WO2005073485A9 WO2005073485A9 (de) | 2005-11-24 |
WO2005073485A3 true WO2005073485A3 (de) | 2006-04-13 |
WO2005073485B1 WO2005073485B1 (de) | 2006-05-11 |
Family
ID=34813058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/000759 WO2005073485A2 (de) | 2004-01-29 | 2005-01-26 | Aktive zonen aufweisende halbleiterstruktur |
Country Status (9)
Country | Link |
---|---|
US (1) | US7692202B2 (de) |
EP (1) | EP1709693B1 (de) |
JP (1) | JP4718492B2 (de) |
CN (1) | CN100468798C (de) |
DE (1) | DE102004004765A1 (de) |
IL (1) | IL177112A (de) |
RU (1) | RU2328795C2 (de) |
TW (1) | TWI340465B (de) |
WO (1) | WO2005073485A2 (de) |
Families Citing this family (241)
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KR100651498B1 (ko) * | 2004-10-28 | 2006-11-29 | 삼성전기주식회사 | 다파장 수광소자 및 그 제조방법 |
KR100691177B1 (ko) * | 2005-05-31 | 2007-03-09 | 삼성전기주식회사 | 백색 발광소자 |
JP5193048B2 (ja) * | 2005-09-30 | 2013-05-08 | ソウル オプト デバイス カンパニー リミテッド | 垂直に積層された発光ダイオードを有する発光素子 |
JP2007129011A (ja) * | 2005-11-02 | 2007-05-24 | Seiko Epson Corp | 光半導体素子 |
DE102006039369A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
EP2064751A1 (de) | 2006-09-22 | 2009-06-03 | Agency for Science, Technology and Research | Gruppe-iii-nitrid-weisslicht-leuchtdiode |
DE102006051745B4 (de) | 2006-09-28 | 2024-02-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
DE102006046038A1 (de) * | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
DE102007011637A1 (de) * | 2007-03-09 | 2008-09-18 | Ivoclar Vivadent Ag | Lichtemissionsvorrichtung |
US8022421B2 (en) * | 2007-11-06 | 2011-09-20 | Industrial Technology Institute | Light emitting module having LED pixels and method of forming the same |
CN101459184B (zh) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 在cmos上感测图像的系统和方法 |
DE102008013030A1 (de) * | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102008006987A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
DE102008006988A1 (de) | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102008018360A1 (de) | 2008-04-11 | 2009-10-15 | Seho Systemtechnik Gmbh | Verfahren und Vorrichtung zum Anbringen von Solarzellen auf einem Verbindungsträger |
DE102008046762B4 (de) * | 2008-09-11 | 2020-12-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Projektor |
JP4780203B2 (ja) * | 2009-02-10 | 2011-09-28 | 日亜化学工業株式会社 | 半導体発光装置 |
DE102009020127A1 (de) * | 2009-03-25 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
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CN1914744A (zh) | 2007-02-14 |
CN100468798C (zh) | 2009-03-11 |
US7692202B2 (en) | 2010-04-06 |
RU2328795C2 (ru) | 2008-07-10 |
WO2005073485A2 (de) | 2005-08-11 |
WO2005073485A8 (de) | 2005-10-27 |
TWI340465B (en) | 2011-04-11 |
DE102004004765A1 (de) | 2005-09-01 |
WO2005073485A9 (de) | 2005-11-24 |
JP2007520071A (ja) | 2007-07-19 |
TW200531269A (en) | 2005-09-16 |
EP1709693B1 (de) | 2012-06-06 |
EP1709693A2 (de) | 2006-10-11 |
IL177112A0 (en) | 2006-12-10 |
RU2006130967A (ru) | 2008-03-10 |
IL177112A (en) | 2013-02-28 |
JP4718492B2 (ja) | 2011-07-06 |
US20070158659A1 (en) | 2007-07-12 |
WO2005073485B1 (de) | 2006-05-11 |
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