WO2005010944A3 - Fet channel having a strained lattice structure along multiple surfaces - Google Patents
Fet channel having a strained lattice structure along multiple surfaces Download PDFInfo
- Publication number
- WO2005010944A3 WO2005010944A3 PCT/US2004/023183 US2004023183W WO2005010944A3 WO 2005010944 A3 WO2005010944 A3 WO 2005010944A3 US 2004023183 W US2004023183 W US 2004023183W WO 2005010944 A3 WO2005010944 A3 WO 2005010944A3
- Authority
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- WIPO (PCT)
- Prior art keywords
- channel
- lattice structure
- gate
- envelope
- height
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910020751 SixGe1-x Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000009271 trench method Methods 0.000 abstract 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04757122A EP1652235A4 (en) | 2003-07-21 | 2004-07-19 | Fet channel having a strained lattice structure along multiple surfaces |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/626,760 | 2003-07-21 | ||
US10/626,760 US6921982B2 (en) | 2003-07-21 | 2003-07-21 | FET channel having a strained lattice structure along multiple surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005010944A2 WO2005010944A2 (en) | 2005-02-03 |
WO2005010944A3 true WO2005010944A3 (en) | 2005-08-11 |
Family
ID=34080479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/023183 WO2005010944A2 (en) | 2003-07-21 | 2004-07-19 | Fet channel having a strained lattice structure along multiple surfaces |
Country Status (6)
Country | Link |
---|---|
US (5) | US6921982B2 (en) |
EP (1) | EP1652235A4 (en) |
KR (1) | KR100773009B1 (en) |
CN (1) | CN100479158C (en) |
TW (1) | TWI281248B (en) |
WO (1) | WO2005010944A2 (en) |
Families Citing this family (355)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503783B1 (en) * | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
KR100483425B1 (en) * | 2003-03-17 | 2005-04-14 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
JP4277021B2 (en) * | 2003-05-30 | 2009-06-10 | パナソニック株式会社 | Semiconductor device |
US6909151B2 (en) * | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US7307467B2 (en) * | 2006-04-28 | 2007-12-11 | International Business Machines Corporation | Structure and method for implementing oxide leakage based voltage divider network for integrated circuit devices |
US7355253B2 (en) * | 2003-08-22 | 2008-04-08 | International Business Machines Corporation | Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
US6970373B2 (en) * | 2003-10-02 | 2005-11-29 | Intel Corporation | Method and apparatus for improving stability of a 6T CMOS SRAM cell |
US7091566B2 (en) * | 2003-11-20 | 2006-08-15 | International Business Machines Corp. | Dual gate FinFet |
KR100585111B1 (en) * | 2003-11-24 | 2006-06-01 | 삼성전자주식회사 | Non-planar transistor having germanium channel region and method for forming the same |
KR100571827B1 (en) * | 2003-12-17 | 2006-04-17 | 삼성전자주식회사 | Thin film transistor and method of manufacturing the same |
US7624192B2 (en) * | 2003-12-30 | 2009-11-24 | Microsoft Corporation | Framework for user interaction with multiple network devices |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US7268058B2 (en) * | 2004-01-16 | 2007-09-11 | Intel Corporation | Tri-gate transistors and methods to fabricate same |
US7180134B2 (en) * | 2004-01-30 | 2007-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and structures for planar and multiple-gate transistors formed on SOI |
US7365398B2 (en) * | 2004-02-11 | 2008-04-29 | Cornell Research Foundation, Inc. | Compact SRAMs and other multiple transistor structures |
US6872640B1 (en) * | 2004-03-16 | 2005-03-29 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
KR100625175B1 (en) * | 2004-05-25 | 2006-09-20 | 삼성전자주식회사 | Semiconductor device having a channel layer and method of manufacturing the same |
US7042009B2 (en) * | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7348284B2 (en) * | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7009250B1 (en) | 2004-08-20 | 2006-03-07 | Micron Technology, Inc. | FinFET device with reduced DIBL |
US7679145B2 (en) * | 2004-08-31 | 2010-03-16 | Intel Corporation | Transistor performance enhancement using engineered strains |
KR100674914B1 (en) * | 2004-09-25 | 2007-01-26 | 삼성전자주식회사 | MOS transistor having strained channel layer and methods of manufacturing thereof |
US7332439B2 (en) | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US7422946B2 (en) * | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7361958B2 (en) | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US7193279B2 (en) * | 2005-01-18 | 2007-03-20 | Intel Corporation | Non-planar MOS structure with a strained channel region |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060202266A1 (en) | 2005-03-14 | 2006-09-14 | Marko Radosavljevic | Field effect transistor with metal source/drain regions |
TWI259585B (en) * | 2005-03-21 | 2006-08-01 | Powerchip Semiconductor Corp | Split gate flash memory and manufacturing method thereof |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US7532501B2 (en) * | 2005-06-02 | 2009-05-12 | International Business Machines Corporation | Semiconductor device including back-gated transistors and method of fabricating the device |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7402875B2 (en) * | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
US20070090416A1 (en) * | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US20070090408A1 (en) * | 2005-09-29 | 2007-04-26 | Amlan Majumdar | Narrow-body multiple-gate FET with dominant body transistor for high performance |
US7575975B2 (en) * | 2005-10-31 | 2009-08-18 | Freescale Semiconductor, Inc. | Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer |
US7615806B2 (en) | 2005-10-31 | 2009-11-10 | Freescale Semiconductor, Inc. | Method for forming a semiconductor structure and structure thereof |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
DE102005059231B4 (en) * | 2005-12-12 | 2011-01-13 | Infineon Technologies Ag | A method of fabricating a compound semiconductor field effect transistor having a fin structure and compound semiconductor field effect transistor having a fin structure |
US7396711B2 (en) * | 2005-12-27 | 2008-07-08 | Intel Corporation | Method of fabricating a multi-cornered film |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US8839175B2 (en) | 2006-03-09 | 2014-09-16 | Tela Innovations, Inc. | Scalable meta-data objects |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
US7908578B2 (en) | 2007-08-02 | 2011-03-15 | Tela Innovations, Inc. | Methods for designing semiconductor device with dynamic array section |
US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US8658542B2 (en) | 2006-03-09 | 2014-02-25 | Tela Innovations, Inc. | Coarse grid design methods and structures |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US9009641B2 (en) | 2006-03-09 | 2015-04-14 | Tela Innovations, Inc. | Circuits with linear finfet structures |
US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
US7449373B2 (en) * | 2006-03-31 | 2008-11-11 | Intel Corporation | Method of ion implanting for tri-gate devices |
CN101427321A (en) * | 2006-04-24 | 2009-05-06 | Nxp股份有限公司 | SRAM cell |
US7579897B2 (en) * | 2006-04-28 | 2009-08-25 | International Business Machines Corporation | Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices |
US7422960B2 (en) | 2006-05-17 | 2008-09-09 | Micron Technology, Inc. | Method of forming gate arrays on a partial SOI substrate |
US7646071B2 (en) * | 2006-05-31 | 2010-01-12 | Intel Corporation | Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory |
KR100745885B1 (en) * | 2006-07-28 | 2007-08-02 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US7537994B2 (en) | 2006-08-28 | 2009-05-26 | Micron Technology, Inc. | Methods of forming semiconductor devices, assemblies and constructions |
US8173551B2 (en) | 2006-09-07 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Defect reduction using aspect ratio trapping |
WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
US8502263B2 (en) | 2006-10-19 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitter-based devices with lattice-mismatched semiconductor structures |
KR100823874B1 (en) * | 2006-12-28 | 2008-04-21 | 경북대학교 산학협력단 | High density fin field effect transistor having low leakage current and method of manufacturing the finfet |
FR2911004B1 (en) * | 2006-12-28 | 2009-05-15 | Commissariat Energie Atomique | METHOD FOR MAKING ASYMMETRIC DOUBLE-GRID TRANSISTORS FOR THE PRODUCTION OF ASYMMETRICAL AND SYMMETRICAL DOUBLE-GRID TRANSISTORS ON THE SAME SUBSTRATE |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
US7859081B2 (en) * | 2007-03-29 | 2010-12-28 | Intel Corporation | Capacitor, method of increasing a capacitance area of same, and system containing same |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
EP1993136A1 (en) * | 2007-05-14 | 2008-11-19 | Interuniversitair Microelektronica Centrum (IMEC) | Multi-gate MOSFET device and method of manufacturing same |
US7696040B2 (en) * | 2007-05-30 | 2010-04-13 | International Business Machines Corporation | Method for fabrication of fin memory structure |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
CN101884117B (en) | 2007-09-07 | 2013-10-02 | 台湾积体电路制造股份有限公司 | Multi-junction solar cells |
US7674669B2 (en) * | 2007-09-07 | 2010-03-09 | Micron Technology, Inc. | FIN field effect transistor |
US7710765B2 (en) * | 2007-09-27 | 2010-05-04 | Micron Technology, Inc. | Back gated SRAM cell |
US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
EP2257974A1 (en) * | 2008-02-26 | 2010-12-08 | Nxp B.V. | Method for manufacturing semiconductor device and semiconductor device |
US8410554B2 (en) * | 2008-03-26 | 2013-04-02 | International Business Machines Corporation | Method, structure and design structure for customizing history effects of SOI circuits |
US8420460B2 (en) | 2008-03-26 | 2013-04-16 | International Business Machines Corporation | Method, structure and design structure for customizing history effects of SOI circuits |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
KR101505494B1 (en) * | 2008-04-30 | 2015-03-24 | 한양대학교 산학협력단 | Cap-less memory device |
KR100968151B1 (en) * | 2008-05-06 | 2010-07-06 | 주식회사 하이닉스반도체 | Semiconductor device with channel of FIN structure and the method for manufacturing the same |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US7902000B2 (en) * | 2008-06-04 | 2011-03-08 | International Business Machines Corporation | MugFET with stub source and drain regions |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
SG10201608214SA (en) | 2008-07-16 | 2016-11-29 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
US7723178B2 (en) * | 2008-07-18 | 2010-05-25 | International Business Machines Corporation | Shallow and deep trench isolation structures in semiconductor integrated circuits |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
US8034697B2 (en) | 2008-09-19 | 2011-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of devices by epitaxial layer overgrowth |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
US8361871B2 (en) | 2008-12-24 | 2013-01-29 | Intel Corporation | Trigate static random-access memory with independent source and drain engineering, and devices made therefrom |
DE102008063427B4 (en) * | 2008-12-31 | 2013-02-28 | Advanced Micro Devices, Inc. | A method of selectively fabricating a transistor having an embedded strain inducing material having a gradually shaped configuration |
WO2010114956A1 (en) | 2009-04-02 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US8058137B1 (en) | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
US8384426B2 (en) | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US9711407B2 (en) | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
US7986042B2 (en) | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US20110199116A1 (en) * | 2010-02-16 | 2011-08-18 | NuPGA Corporation | Method for fabrication of a semiconductor device and structure |
US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
US8362482B2 (en) | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
US8754533B2 (en) | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
US8405420B2 (en) | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US9768305B2 (en) * | 2009-05-29 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient ternary or quaternary multiple-gate transistor |
US8362568B2 (en) * | 2009-08-28 | 2013-01-29 | International Business Machines Corporation | Recessed contact for multi-gate FET optimizing series resistance |
US8796777B2 (en) * | 2009-09-02 | 2014-08-05 | Qualcomm Incorporated | Fin-type device system and method |
US8178400B2 (en) | 2009-09-28 | 2012-05-15 | International Business Machines Corporation | Replacement spacer for tunnel FETs |
US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US8536023B2 (en) * | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
US8294159B2 (en) | 2009-10-12 | 2012-10-23 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
CN102074582B (en) * | 2009-11-20 | 2013-06-12 | 台湾积体电路制造股份有限公司 | Integrated circuit structure and formation method thereof |
US8263477B2 (en) * | 2010-01-08 | 2012-09-11 | International Business Machines Corporation | Structure for use in fabrication of PiN heterojunction TFET |
US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8026521B1 (en) | 2010-10-11 | 2011-09-27 | Monolithic 3D Inc. | Semiconductor device and structure |
US8258031B2 (en) | 2010-06-15 | 2012-09-04 | International Business Machines Corporation | Fabrication of a vertical heterojunction tunnel-FET |
US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
DE102010038742B4 (en) * | 2010-07-30 | 2016-01-21 | Globalfoundries Dresden Module One Llc & Co. Kg | Method and semiconductor device based on a deformation technology in three-dimensional transistors based on a deformed channel semiconductor material |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8114757B1 (en) | 2010-10-11 | 2012-02-14 | Monolithic 3D Inc. | Semiconductor device and structure |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
JP5325932B2 (en) * | 2011-05-27 | 2013-10-23 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US9761666B2 (en) * | 2011-06-16 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel field effect transistor |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
CN102903750B (en) * | 2011-07-27 | 2015-11-25 | 中国科学院微电子研究所 | A kind of semiconductor FET transistor structure and preparation method thereof |
US8841701B2 (en) * | 2011-08-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device having a channel defined in a diamond-like shape semiconductor structure |
CN102956700B (en) * | 2011-08-30 | 2015-06-24 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US9029956B2 (en) | 2011-10-26 | 2015-05-12 | Global Foundries, Inc. | SRAM cell with individual electrical device threshold control |
TWI571936B (en) * | 2011-10-26 | 2017-02-21 | 聯華電子股份有限公司 | Structure of field effect transistor with fin structure and fabricating method thereof |
US9048136B2 (en) | 2011-10-26 | 2015-06-02 | GlobalFoundries, Inc. | SRAM cell with individual electrical device threshold control |
CN103137685B (en) * | 2011-11-24 | 2015-09-30 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device and manufacture method thereof |
CN103137671B (en) * | 2011-12-02 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | Multi-grid field effect transistor and manufacturing method thereof |
KR101913457B1 (en) * | 2012-01-13 | 2018-10-30 | 텔라 이노베이션스, 인코포레이티드 | Circuits with linear finfet structures |
US8587068B2 (en) * | 2012-01-26 | 2013-11-19 | International Business Machines Corporation | SRAM with hybrid FinFET and planar transistors |
US8809178B2 (en) | 2012-02-29 | 2014-08-19 | Globalfoundries Inc. | Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents |
US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
US8669147B2 (en) | 2012-06-11 | 2014-03-11 | Globalfoundries Inc. | Methods of forming high mobility fin channels on three dimensional semiconductor devices |
CN103515420B (en) * | 2012-06-26 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method thereof |
US8847281B2 (en) * | 2012-07-27 | 2014-09-30 | Intel Corporation | High mobility strained channels for fin-based transistors |
US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8686428B1 (en) | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
US9917018B2 (en) | 2012-12-04 | 2018-03-13 | Synopsys, Inc. | Method and apparatus with channel stop doped devices |
EP2741337B1 (en) | 2012-12-07 | 2018-04-11 | IMEC vzw | Semiconductor heterostructure field effect transistor and method for making thereof |
KR101402697B1 (en) * | 2012-12-11 | 2014-06-03 | 한국과학기술원 | Independent and symmetric double gated electron-hole bilayer tunnel field effect transistor and its fabrication method |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
KR101368191B1 (en) | 2013-01-03 | 2014-02-28 | 한국과학기술원 | Proposal and fabrication method of vertically structured electron-hole bilayer tunnel field effect transistor with independent and symmetric double gate |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
JP6251604B2 (en) * | 2013-03-11 | 2017-12-20 | ルネサスエレクトロニクス株式会社 | Semiconductor device having fin FET structure and manufacturing method thereof |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8963258B2 (en) * | 2013-03-13 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company | FinFET with bottom SiGe layer in source/drain |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
KR102038486B1 (en) | 2013-04-09 | 2019-10-30 | 삼성전자 주식회사 | Semiconductor device and method for fabricating the same |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US9337109B2 (en) | 2013-05-24 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-threshold voltage FETs |
US8895395B1 (en) | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
US9293466B2 (en) * | 2013-06-19 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded SRAM and methods of forming the same |
CN104347408B (en) * | 2013-07-31 | 2017-12-26 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and its manufacture method |
US9263455B2 (en) | 2013-07-23 | 2016-02-16 | Micron Technology, Inc. | Methods of forming an array of conductive lines and methods of forming an array of recessed access gate lines |
US9209094B2 (en) | 2013-07-29 | 2015-12-08 | Globalfoundries Inc. | Fin field effect transistor with dielectric isolation and anchored stressor elements |
CN104347407B (en) * | 2013-07-31 | 2017-10-31 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and its manufacture method |
US9396931B2 (en) * | 2013-08-01 | 2016-07-19 | Qualcomm Incorporated | Method of forming fins from different materials on a substrate |
US9070770B2 (en) * | 2013-08-27 | 2015-06-30 | International Business Machines Corporation | Low interfacial defect field effect transistor |
US9224866B2 (en) | 2013-08-27 | 2015-12-29 | Globalfoundries Inc. | Suspended body field effect transistor |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9214513B2 (en) * | 2014-02-13 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company Limited | Fin structure and method for forming the same |
KR102094535B1 (en) | 2014-03-21 | 2020-03-30 | 삼성전자주식회사 | Transistor and method for fabricating the same |
US9466669B2 (en) | 2014-05-05 | 2016-10-11 | Samsung Electronics Co., Ltd. | Multiple channel length finFETs with same physical gate length |
US9425275B2 (en) * | 2014-06-13 | 2016-08-23 | Samsung Electronics Co., Ltd. | Integrated circuit chips having field effect transistors with different gate designs |
US9209301B1 (en) | 2014-09-18 | 2015-12-08 | Soitec | Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers |
US9165945B1 (en) * | 2014-09-18 | 2015-10-20 | Soitec | Method for fabricating semiconductor structures including transistor channels having different strain states, and related semiconductor structures |
US9219150B1 (en) | 2014-09-18 | 2015-12-22 | Soitec | Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures |
CN105552124B (en) * | 2014-10-30 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | Fin field effect pipe and forming method thereof |
US9455274B2 (en) | 2015-01-30 | 2016-09-27 | International Business Machines Corporation | Replacement fin process in SSOI wafer |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10833175B2 (en) * | 2015-06-04 | 2020-11-10 | International Business Machines Corporation | Formation of dislocation-free SiGe finFET using porous silicon |
CN106252228B (en) * | 2015-06-11 | 2019-11-08 | 中国科学院微电子研究所 | A kind of forming method of compound fin |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10374042B2 (en) * | 2015-08-31 | 2019-08-06 | International Business Machines Corporation | Semiconductor device including epitaxially formed buried channel region |
US9362383B1 (en) | 2015-09-17 | 2016-06-07 | International Business Machines Corporation | Highly scaled tunnel FET with tight pitch and method to fabricate same |
WO2017053329A1 (en) | 2015-09-21 | 2017-03-30 | Monolithic 3D Inc | 3d semiconductor device and structure |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US9496260B1 (en) * | 2015-12-09 | 2016-11-15 | International Business Machines Corporation | Tall strained high percentage silicon germanium fins for CMOS |
US9634009B1 (en) | 2015-12-18 | 2017-04-25 | International Business Machines Corporation | System and method for source-drain extension in FinFETs |
US9973148B2 (en) | 2016-08-08 | 2018-05-15 | Skyworks Solutions, Inc. | Radio frequency system with switch to receive envelope |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11024369B1 (en) | 2019-11-18 | 2021-06-01 | International Business Machines Corporation | Static random-access memory cell design |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6300182B1 (en) * | 2000-12-11 | 2001-10-09 | Advanced Micro Devices, Inc. | Field effect transistor having dual gates with asymmetrical doping for reduced threshold voltage |
US6765303B1 (en) * | 2003-05-06 | 2004-07-20 | Advanced Micro Devices, Inc. | FinFET-based SRAM cell |
US6774390B2 (en) * | 2002-02-22 | 2004-08-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6803631B2 (en) * | 2003-01-23 | 2004-10-12 | Advanced Micro Devices, Inc. | Strained channel finfet |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461243A (en) | 1993-10-29 | 1995-10-24 | International Business Machines Corporation | Substrate for tensilely strained semiconductor |
US5534713A (en) | 1994-05-20 | 1996-07-09 | International Business Machines Corporation | Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers |
JP3443343B2 (en) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | Semiconductor device |
US6252284B1 (en) | 1999-12-09 | 2001-06-26 | International Business Machines Corporation | Planarized silicon fin device |
JP2001358233A (en) * | 2000-06-15 | 2001-12-26 | Hitachi Ltd | Semiconductor integrated circuit device and its manufacturing method |
JP4044276B2 (en) * | 2000-09-28 | 2008-02-06 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US6475869B1 (en) * | 2001-02-26 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of forming a double gate transistor having an epitaxial silicon/germanium channel region |
US6458662B1 (en) * | 2001-04-04 | 2002-10-01 | Advanced Micro Devices, Inc. | Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formed |
KR100467527B1 (en) * | 2001-06-21 | 2005-01-24 | 재단법인서울대학교산학협력재단 | Double-gate MOSFET and method for fabricating the same |
US6635909B2 (en) * | 2002-03-19 | 2003-10-21 | International Business Machines Corporation | Strained fin FETs structure and method |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US6800910B2 (en) * | 2002-09-30 | 2004-10-05 | Advanced Micro Devices, Inc. | FinFET device incorporating strained silicon in the channel region |
US6787864B2 (en) * | 2002-09-30 | 2004-09-07 | Advanced Micro Devices, Inc. | Mosfets incorporating nickel germanosilicided gate and methods for their formation |
-
2003
- 2003-07-21 US US10/626,760 patent/US6921982B2/en not_active Expired - Lifetime
-
2004
- 2004-07-15 TW TW093121106A patent/TWI281248B/en active
- 2004-07-19 WO PCT/US2004/023183 patent/WO2005010944A2/en active Search and Examination
- 2004-07-19 KR KR1020067000697A patent/KR100773009B1/en active IP Right Grant
- 2004-07-19 EP EP04757122A patent/EP1652235A4/en not_active Withdrawn
- 2004-07-19 CN CNB2004800210466A patent/CN100479158C/en active Active
-
2005
- 2005-05-24 US US11/137,811 patent/US7198990B2/en not_active Expired - Lifetime
-
2007
- 2007-01-09 US US11/621,290 patent/US20070111406A1/en not_active Abandoned
-
2008
- 2008-01-07 US US11/970,011 patent/US20080105900A1/en not_active Abandoned
- 2008-01-07 US US11/969,992 patent/US20080105898A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6300182B1 (en) * | 2000-12-11 | 2001-10-09 | Advanced Micro Devices, Inc. | Field effect transistor having dual gates with asymmetrical doping for reduced threshold voltage |
US6774390B2 (en) * | 2002-02-22 | 2004-08-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6803631B2 (en) * | 2003-01-23 | 2004-10-12 | Advanced Micro Devices, Inc. | Strained channel finfet |
US6765303B1 (en) * | 2003-05-06 | 2004-07-20 | Advanced Micro Devices, Inc. | FinFET-based SRAM cell |
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CN1826690A (en) | 2006-08-30 |
US20070111406A1 (en) | 2007-05-17 |
EP1652235A4 (en) | 2008-09-17 |
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US6921982B2 (en) | 2005-07-26 |
US20050017377A1 (en) | 2005-01-27 |
CN100479158C (en) | 2009-04-15 |
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