WO2004057648A2 - Localized reflow for wire bonding and flip chip connections - Google Patents

Localized reflow for wire bonding and flip chip connections Download PDF

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Publication number
WO2004057648A2
WO2004057648A2 PCT/US2003/040638 US0340638W WO2004057648A2 WO 2004057648 A2 WO2004057648 A2 WO 2004057648A2 US 0340638 W US0340638 W US 0340638W WO 2004057648 A2 WO2004057648 A2 WO 2004057648A2
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WO
WIPO (PCT)
Prior art keywords
energy source
solder bumps
flip chip
localized
solder
Prior art date
Application number
PCT/US2003/040638
Other languages
French (fr)
Other versions
WO2004057648A3 (en
Inventor
Hui Wang
Original Assignee
Acm Research, Inc.
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Filing date
Publication date
Application filed by Acm Research, Inc. filed Critical Acm Research, Inc.
Priority to AU2003303155A priority Critical patent/AU2003303155A1/en
Publication of WO2004057648A2 publication Critical patent/WO2004057648A2/en
Publication of WO2004057648A3 publication Critical patent/WO2004057648A3/en

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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • the present application generally relates to soldering electrical connection to die, and more particularly to wire bonding and flip chip connections.
  • low dielectric (low-k) materials Since the introduction of low dielectric (low-k) materials, a great deal of effort has been put to develop new technologies and to integrate old, conventional methods to solve problems created by dielectric layers formed from low-k materials.
  • the low-k materials are structurally and mechanically weaker than other more conventional insulators, such as SiO 2 , and thus are more susceptible to device failure by delamination of the low-k layers, cracks or leaks to the interconnections during the fabrication process.
  • the size of bonding pads are reduced or reinforced to minimize the force on the metal layers. While this may alleviate some contact pressure, there are still thermal stress and the cumulative effect of repetitive contact pressures on the underlying metal layers.
  • a system for soldering electrical connection for a chip includes a bonding pad, a solder bump, and an energy source.
  • the energy source is localized to the solder bump without physically contacting the solder bump. The localized energy source heats the solder bump to reflow the solder bump on the bonding pad without heating the entire chip.
  • FIG. 1 is an illustration of a prior art technique utilizing contact pressure to hold and solder wire to a bonding pad
  • FIGs. 2A and 2B are illustrations of a prior art technique utilizing an oven to reflow soldering material between a flip chip and a substrate;
  • FIGs. 3 A, 3B, 4A, 4B, 5 A, 5B, 6A, and 6B depict exemplary embodiments utilizing a localized energy source to heat a solder bump;
  • FIG. 7 depicts an exemplary embodiment utilizing multiple localized energy sources to heat multiple solder bumps
  • FIG. 8 depicts an exemplary embodiment utilizing an energy source localized through an inlay mask to heat multiple solder bumps
  • FIG. 9 depicts an exemplary embodiment utilizing a movable energy source to heat multiple solder bumps
  • FIG. 10 depicts an exemplary embodiment utilizing a movable table with a stationary energy source to heat multiple solder bumps
  • FIG. 11 depicts an exemplary embodiment utilizing a positioning system with an energy source
  • FIGs. 12A and 12B depict an exemplary embodiment utilizing a localized energy source to heat bond a flip chip to a substrate
  • FIGs. 13-15 depict exemplary embodiments utilizing an energy source localized through an inlay mask to heat multiple solder bumps to bond a flip chip to a substrate;
  • FIGs. 16A, 16B, and 16C depict an exemplary embodiment for bonding a flip chip to a substrate
  • FIGs. 17A, 17B, and 17C depict an exemplary embodiment for bonding a flip chip to a printed circuit board/card
  • FIGs. 18A and 18B depict an exemplary embodiment for bonding a flip chip to a substrate using a movable table
  • FIGs. 19A and 19B depict an exemplary embodiment for bonding a flip chip to a substrate using a loading robot.
  • a system for soldering electrical connection for a chip 300 includes a bonding pad 302, a solder bump 304, and an energy source 306.
  • energy source 306 is localized to solder bump 304 without physically contacting solder bump 304. Localized energy source 306 heats solder bump 304 to reflow solder bump 304 on bonding pad 302 without heating the entire chip 300.
  • solder bump 304 is attached to wire 308.
  • Solder bump 304 and wire 308 are positioned on bonding pad 302, then localized energy source 306 heats solder bump 304 positioned on bonding pad 302.
  • solder bump 304 and wire 308 form a wire bond to bonding pad 302.
  • solder bump 304 is preferably 96.5 percent tin and 3.5 percent silver tin.
  • Solder bump 304 preferably has a melting temperature above 221 degrees Celsius. It should be recognized, however, that solder bump 304 can be formed from various materials and have various melting temperatures.
  • localized energy source 306 can include a laser, x-ray, electrical Andy current type heater, infrared heat, electron beam, and the like.
  • the laser can be a solid state laser (e.g., ruby, Nd-glass, ND:YAG (yttrium aluminum garnet, Y Al 5 O 1 ), and the like), or a gas laser (e.g., HE-NE, CO , HF, and the like).
  • localized energy source 306 heats solder bump 304 before solder bump 304 is positioned on bonding pad 302. After solder bump 304 has been heated to become molten, solder bump 304 and wire 308 are positioned on bonding pad 302. As depicted in FIG. 4B, solder bump 304 and wire 308 form a wire bond to bonding pad 302.
  • localized energy source 306 heats solder bump 304 and bonding pad 302 before solder bump 304 is positioned on bonding pad 302. After solder bump 304 has been heated to become molten, heated solder bump 304 is positioned on heated bonding pad 302. As depicted in FIG. 5B, solder bump 304 and wire 308 form a wire bond to bonding pad 302. [0031] In the present exemplary embodiment, a wetting layer 502 is formed on bonding pad 302. Localized energy source 302 melts wetting layer 502 covering bonding pad 302. Wetting layer 502 can include AU, Cu, Ti, TiN, Tin, SbPb, SnAg alloys, and the like.
  • localized energy source 306 can include a first energy source 306 localized to solder bump 304 and a second energy source 306 localized to bonding pad 302. The first energy source 306 heats solder bump 304, and the second energy source 306 heats bonding pad 302.
  • localized energy source 306 is movable.
  • the movable energy source 306 first heats solder bump 304, then moves to heat bonding pad 302.
  • solder bump 304 is positioned on bonding pad 302 before solder bump 304 is heated by localized energy source 306.
  • wire 308 is attached to solder bump 304 after solder bump 304 has been heated.
  • localized energy source 306 heats wire 308 and solder bump 304, then heated wire 308 is attached to heated solder bump 304 to form a wire bond to bonding pad 302.
  • a wetting layer 502 is formed on bonding pad 302.
  • Localized energy source 306 melts wetting layer 502 covering bonding pad 302.
  • Wetting layer 502 can include AU, Cu, Ti, TiN, Tin, SbPb, SnAg alloys, and the like.
  • localized energy source 306 can include a first energy source 306 localized to wire 308 and a second energy source 306 localized to solder bump 304.
  • the first energy source 306 heats wire 308, and second the second energy source 306 heats solder bump 304.
  • localized energy source 306 is movable.
  • the movable energy source 306 first heats wire 308, then moves to heat solder bump 304.
  • chip 300 can include multiple bonding pads 302, multiple solder bumps 304, and wires 308.
  • multiple energy sources 306 can be used to heat multiple solder bumps 304. More particularly, each energy source 306 is localized to each solder bump 304 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300. Using multiple energy sources 306 to heat multiple solder bumps 304 can increase efficiency of the reflow process.
  • an inlay mask 802 is disposed between energy source 306 and multiple solder bumps 304. As depicted in FIG.
  • inlay mask 802 includes cutouts 804 corresponding to solder bumps 304.
  • energy source 306 is localized on each solder bump 304 through each cutout 804 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300.
  • inlay mask 802 can be an opaque material, preferably a metal or alloy with a high conductivity and high melting point, such as Ti, W, Cu, Ta, Au, Al, and the like.
  • Inlay mask 802 can be connected to a heat exchange 806 to maintain the temperature of inlay mask 802.
  • Energy source 306 can be a broad beam laser, infrared heating lamp, electron beam, and the like. When energy source 306 is an electron beam, the reflow process is preferably performed within a vacuum environment.
  • energy source 306 is movable. As depicted in FIG. 9, movable energy source 306 can move between each solder bump 304 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300. As also depicted in FIG. 9, movable energy source 306 can move in an x, y, and z directions. It should be recognized that chip 300 can be held stationary or can move relative to movable nozzle 306.
  • chip 300 moves to position each solder bump 304 adjacent to energy source 306 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300.
  • chip 300 can be disposed on a movable table 1002 or any suitable moving device. It should be recognized that energy source 306 can be held stationary or can move relative to chip 300.
  • a positioning system 1102 can be used to investigate, locate the position of each bonding pad 302 on chip 300.
  • positioning system 1102 is an optical image system, such as a CCD camera.
  • positioning system 1102 can be connected to energy source 306.
  • Positioning system 1102 and energy source 306 can be mounted on and move along an x-axis bar 1104, which can move along a y-axis bar 1106.
  • position system 1102 and energy source 306 can be moved to any location on chip 300.
  • chip 300 is bonded to a substrate 1200, and is typically referred to as a flip chip.
  • solder bump 304 is disposed between flip chip 300 and substrate 1200 to connect, bond flip chip 300 and substrate 1200.
  • a flip chip connection requires a high melting temperature of 183 degrees Celsius for a typical eutectic alloy of 63 percent Sn and 37 percent Pb, and a solder deposition time of about 10 seconds.
  • a longer solder deposition time can lead to longer contact pressure on the dielectric layer of chip 300, which can result in defects in the dielectric layer, particularly when the dielectric layer includes low-k materials.
  • energy source 306 is localized to solder bump 304 disposed between flip chip 300 and substrate 1200. As depicted in FIG. 12B, localized energy source 306 heats solder bump 304 until solder bump 304 reflows into an hourglass shaped connection between flip chip 300 and substrate 1200.
  • flip chip 300 can include multiple solder bumps 304.
  • inlay mask 802 is disposed between energy source 306 and multiple solder bumps 304.
  • inlay mask 802 includes cutouts 804 corresponding to solder bumps 304.
  • energy source 306 is localized on each solder bump 304 through each cutout 804 to heat each solder bump 304 to reflow each solder bump 304 without heating the entire flip chip 300.
  • energy source 306 heats each solder bump 304 on flip chip 300 through solder bumps 304 on substrate 1200.
  • a sensor 1302 is configured to scan for positioning marks 1304 on the back of substrate 1200 to position inlay mask 802 over substrate 1200.
  • a sensor 1306 is also configured to calibrate the position of substrate 1200 relative to flip chip 300.
  • sensors 1302 and 1306 are optical sensors. It should be recognized, however, that various types of sensors can be used.
  • flip chip 300 is disposed on movable table 1002, which moves flip chip 300 relative to inlay mask 802. As depicted in FIG. 13, movable table 1002 can move in an x, y, z, and theta directions.
  • a heater 1402 can be used to heat flip chip 300. Heater 1402 heats flip chip 300 to reduce the amount of power needed from energy source 306. However, heater 1402 heats flip chip 300 to a temperature below the melting temperature of solder bumps 304 on flip chip 300.
  • flip chip 300 and substrate 1200 are disposed within an enclosed chamber 1502.
  • inlay mask 802 is disposed outside enclosed chamber 1502.
  • enclosed chamber 1502 includes a glass top 1504.
  • energy source 306 is localized on each solder bump 304 on flip chip 300 through each cutout 804 on inlay mask 802 and through glass top 1504 to reflow each solder bump 304 without heating the entire flip chip 300.
  • enclosed chamber 1502 has a controlled atmosphere. As depicted in FIG. 15, enclosed chamber 1502 has a gas inlet 1504. During the reflow process when solder bumps 304 are reflowed, an inert gas, such as nitrogen, is introduced through gas inlet 1504 to reduce/prevent oxidation of solder bumps 304. After reflow, a cool gas, such as nitrogen, is introduced through gas inlet 1504 to cool down flip chip 300 and substrate 1200 to reduce/minimize the impact of heat generated during the reflow process.
  • an inert gas such as nitrogen
  • a cool gas such as nitrogen
  • FIG. 16A energy source 306 is localized on solder bumps 304 on flip chip 300 using inlay mask 802 to heat solder bumps 304 above its melting point to reflow solder bumps 304 without heating the entire flip chip 300. More particularly, solder bumps 304 are heated to a temperature of 10 to 100, preferably 50, degrees Celsius higher than the melting point of solder bumps 304. hi FIG.
  • solder bumps 304 on flip chip 300 when the temperature of solder bumps 304 on flip chip 300 is above the melting point of solder bumps 304, bonding pads or solder bumps on substrate 1200 are brought in contact with solder bumps 304 on flip chip 300.
  • solder bumps 304 on flip chip 300 and bonding pads or solder bumps on substrate 1200 are kept in contact until solder bumps 304 on flip chip 300 cool to a temperature below the melting temperature of solder bumps 304 on flip chip 300.
  • substrate 1200 is a printed circuit board/card.
  • flip chip 300 is bonded to printed circuit board/card 1200.
  • flip chip 300 is disposed on movable table 1002. Movable table 1002 moves flip chip 300 between a first position below inlay mask 808 and a second position below substrate 1200. When flip chip 300 is in the first position, solder bumps 304 on flip chip 300 are heated by energy source 306 through inlay mask 808. As depicted in FIG. 18B, when flip chip 300 is in the second position, bonding pads or solder bumps on substrate 1200 are brought in contact with solder bumps 304 on flip chip 300.
  • flip chip 300 is held stationary. Inlay mask 808 and energy source 306 are moved adjacent to flip chip 300 to heat solder bumps 304 on flip chip 300.
  • FIG. 19B when solder bumps 304 on flip chip 300 have been heated, substrate 1200 is moved adjacent to flip chip 300 to bring bonding pads or solder bumps on substrate 1200 in contact with solder bumps 304 on flip chip 300.
  • a loading robot 1902 moves substrate 1200 to bring bonding pads or solder bumps on substrate 1200 in contact with solder bumps 304 on flip chip 300.

Abstract

A system for soldering electrical connection for a chip (300) includes a bonding pad (302), a solder bump (304), and an energy source (306). The energy source (306) is localized to the solder bump (304) without physically contacting the solder bump (304). Localized energy source (306) heat solder bump (340), to reflow the solder bump (304) on the bonding pad (302) without heating the entire chip (300).

Description

LOCALIZED REFLOW FOR WIRE BONDING AND FLIP CHIP CONNECTIONS
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Application No. 60/434,474, titled LOCALIZED REFLOW FOR WIRE BONDING AND FLIP CHIP CONNECTIONS, filed December 18, 2003, the entire content of which is incoφorated herein by reference.
BACKGROUND
1. Field of the Invention
[0002] The present application generally relates to soldering electrical connection to die, and more particularly to wire bonding and flip chip connections.
2. Related Art
[0003] Since the introduction of low dielectric (low-k) materials, a great deal of effort has been put to develop new technologies and to integrate old, conventional methods to solve problems created by dielectric layers formed from low-k materials. The low-k materials are structurally and mechanically weaker than other more conventional insulators, such as SiO2, and thus are more susceptible to device failure by delamination of the low-k layers, cracks or leaks to the interconnections during the fabrication process.
[0004] For example, conventional techniques for bonding wire to a bonding pad or joining a flip chip to a substrate requires considerable amount of pressure to the underlying metal structures in the bonding process. Additionally, making flip chip connections typically involves heating the flip chip and the substrate in an oven or furnace to a temperature no less than the melting point of soldering material to form a joined bond between the flip chip and the substrate. More particularly, for solder bumps, higher temperatures are required to facilitate reflow and joining, such as 20 to 30 degrees Celsius beyond the melting temperature of the solder bumps (205-220 degrees Celsius for Pb-Sn eutectic alloy). Additionally, for flip chip connections, aside from the high temperature, the difference in thermo expansion coefficients between the flip chip and the substrate can create thermo stress as the chip cools down. As depicted in Figs. 1, 2A, and 2B, when low-k materials are used, the pressure and thermal expansion associated with conventional techniques can result in defects being formed in the low-k materials. [0005] Moreover, countries in Asia and Europe are set to ban the use of lead in soldering materials for electronic component manufacturing as early as 2004. Pb or SnPb eutectic solder requires a relatively lower temperature for soldering than lead-free solder alternatives, such as Sn AgCu, which have higher melting temperature properties. Thus, with the push towards low-k materials and the ban on lead in electronic packaging, thermo budget control will be key to minimize or eliminate interconnect damages to the metal layer during wire bonding and flip chip processes.
[0006] In some conventional techniques, the size of bonding pads are reduced or reinforced to minimize the force on the metal layers. While this may alleviate some contact pressure, there are still thermal stress and the cumulative effect of repetitive contact pressures on the underlying metal layers.
SUMMARY
[0007] In one exemplary embodiment, a system for soldering electrical connection for a chip includes a bonding pad, a solder bump, and an energy source. In the present exemplary embodiment, the energy source is localized to the solder bump without physically contacting the solder bump. The localized energy source heats the solder bump to reflow the solder bump on the bonding pad without heating the entire chip.
DESCRIPTION OF DRAWING FIGURES
[0008] The present application can be best understood by reference to the following description taken in conjunction with the accompanying drawing figures, in which like parts may be referred to by like numerals:
[0009] FIG. 1 is an illustration of a prior art technique utilizing contact pressure to hold and solder wire to a bonding pad;
[0010] FIGs. 2A and 2B are illustrations of a prior art technique utilizing an oven to reflow soldering material between a flip chip and a substrate;
[0011] FIGs. 3 A, 3B, 4A, 4B, 5 A, 5B, 6A, and 6B depict exemplary embodiments utilizing a localized energy source to heat a solder bump;
[0012] FIG. 7 depicts an exemplary embodiment utilizing multiple localized energy sources to heat multiple solder bumps; [0013] FIG. 8 depicts an exemplary embodiment utilizing an energy source localized through an inlay mask to heat multiple solder bumps;
[0014] FIG. 9 depicts an exemplary embodiment utilizing a movable energy source to heat multiple solder bumps;
[0015] FIG. 10 depicts an exemplary embodiment utilizing a movable table with a stationary energy source to heat multiple solder bumps;
[0016] FIG. 11 depicts an exemplary embodiment utilizing a positioning system with an energy source;
[0017] FIGs. 12A and 12B depict an exemplary embodiment utilizing a localized energy source to heat bond a flip chip to a substrate;
[0018] FIGs. 13-15 depict exemplary embodiments utilizing an energy source localized through an inlay mask to heat multiple solder bumps to bond a flip chip to a substrate;
[0019] FIGs. 16A, 16B, and 16C depict an exemplary embodiment for bonding a flip chip to a substrate;
[0020] FIGs. 17A, 17B, and 17C depict an exemplary embodiment for bonding a flip chip to a printed circuit board/card;
[0021] FIGs. 18A and 18B depict an exemplary embodiment for bonding a flip chip to a substrate using a movable table; and
[0022] FIGs. 19A and 19B depict an exemplary embodiment for bonding a flip chip to a substrate using a loading robot.
DETAILED DESCRIPTION
[0023] The following description sets forth numerous specific configurations, parameters, and the like. It should be recognized, however, that such description is not intended as a limitation on the scope of the present invention, but is instead provided as a description of exemplary embodiments. [0024] 1. Wire Bond
[0025] With reference to FIG. 3 A, in one exemplary embodiment, a system for soldering electrical connection for a chip 300 includes a bonding pad 302, a solder bump 304, and an energy source 306. In the present exemplary embodiment, energy source 306 is localized to solder bump 304 without physically contacting solder bump 304. Localized energy source 306 heats solder bump 304 to reflow solder bump 304 on bonding pad 302 without heating the entire chip 300.
[0026] In the embodiment depicted in FIG. 3 A, solder bump 304 is attached to wire 308. Solder bump 304 and wire 308 are positioned on bonding pad 302, then localized energy source 306 heats solder bump 304 positioned on bonding pad 302. As depicted in FIG. 3B, solder bump 304 and wire 308 form a wire bond to bonding pad 302.
[0027] In the present exemplary embodiment, solder bump 304 is preferably 96.5 percent tin and 3.5 percent silver tin. Solder bump 304 preferably has a melting temperature above 221 degrees Celsius. It should be recognized, however, that solder bump 304 can be formed from various materials and have various melting temperatures.
[0028] In the present exemplary embodiment, localized energy source 306 can include a laser, x-ray, electrical Andy current type heater, infrared heat, electron beam, and the like. When localized energy source 306 is a laser, the laser can be a solid state laser (e.g., ruby, Nd-glass, ND:YAG (yttrium aluminum garnet, Y Al5O1 ), and the like), or a gas laser (e.g., HE-NE, CO , HF, and the like).
[0029] With reference to FIG. 4A, in another exemplary embodiment, localized energy source 306 heats solder bump 304 before solder bump 304 is positioned on bonding pad 302. After solder bump 304 has been heated to become molten, solder bump 304 and wire 308 are positioned on bonding pad 302. As depicted in FIG. 4B, solder bump 304 and wire 308 form a wire bond to bonding pad 302.
[0030] With reference to FIG. 5A, in another exemplary embodiment, localized energy source 306 heats solder bump 304 and bonding pad 302 before solder bump 304 is positioned on bonding pad 302. After solder bump 304 has been heated to become molten, heated solder bump 304 is positioned on heated bonding pad 302. As depicted in FIG. 5B, solder bump 304 and wire 308 form a wire bond to bonding pad 302. [0031] In the present exemplary embodiment, a wetting layer 502 is formed on bonding pad 302. Localized energy source 302 melts wetting layer 502 covering bonding pad 302. Wetting layer 502 can include AU, Cu, Ti, TiN, Tin, SbPb, SnAg alloys, and the like.
[0032] In the present exemplary embodiment, localized energy source 306 can include a first energy source 306 localized to solder bump 304 and a second energy source 306 localized to bonding pad 302. The first energy source 306 heats solder bump 304, and the second energy source 306 heats bonding pad 302.
[0033] Alternatively, localized energy source 306 is movable. The movable energy source 306 first heats solder bump 304, then moves to heat bonding pad 302.
[0034] With reference to FIG. 6A, in another exemplary embodiment, solder bump 304 is positioned on bonding pad 302 before solder bump 304 is heated by localized energy source 306. As depicted in FIG. 6B, wire 308 is attached to solder bump 304 after solder bump 304 has been heated. In the present exemplary embodiment, localized energy source 306 heats wire 308 and solder bump 304, then heated wire 308 is attached to heated solder bump 304 to form a wire bond to bonding pad 302.
[0035] In the present exemplary embodiment, a wetting layer 502 is formed on bonding pad 302. Localized energy source 306 melts wetting layer 502 covering bonding pad 302. Wetting layer 502 can include AU, Cu, Ti, TiN, Tin, SbPb, SnAg alloys, and the like.
[0036] In the present exemplary embodiment, localized energy source 306 can include a first energy source 306 localized to wire 308 and a second energy source 306 localized to solder bump 304. The first energy source 306 heats wire 308, and second the second energy source 306 heats solder bump 304.
[0037] Alternatively, localized energy source 306 is movable. The movable energy source 306 first heats wire 308, then moves to heat solder bump 304.
[0038] With reference to FIG. 7, in one exemplary embodiment, chip 300 can include multiple bonding pads 302, multiple solder bumps 304, and wires 308. As depicted in FIG. 7, multiple energy sources 306 can be used to heat multiple solder bumps 304. More particularly, each energy source 306 is localized to each solder bump 304 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300. Using multiple energy sources 306 to heat multiple solder bumps 304 can increase efficiency of the reflow process. [0039] With reference to FIG. 8, in another exemplary embodiment, an inlay mask 802 is disposed between energy source 306 and multiple solder bumps 304. As depicted in FIG. 8, inlay mask 802 includes cutouts 804 corresponding to solder bumps 304. Thus, energy source 306 is localized on each solder bump 304 through each cutout 804 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300.
[0040] In the present exemplary embodiment, inlay mask 802 can be an opaque material, preferably a metal or alloy with a high conductivity and high melting point, such as Ti, W, Cu, Ta, Au, Al, and the like. Inlay mask 802 can be connected to a heat exchange 806 to maintain the temperature of inlay mask 802. Energy source 306 can be a broad beam laser, infrared heating lamp, electron beam, and the like. When energy source 306 is an electron beam, the reflow process is preferably performed within a vacuum environment.
[0041] With reference to FIG. 9, in another exemplary embodiment, energy source 306 is movable. As depicted in FIG. 9, movable energy source 306 can move between each solder bump 304 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300. As also depicted in FIG. 9, movable energy source 306 can move in an x, y, and z directions. It should be recognized that chip 300 can be held stationary or can move relative to movable nozzle 306.
[0042] With reference to FIG. 10, in another exemplary embodiment, chip 300 moves to position each solder bump 304 adjacent to energy source 306 to heat each solder bump 304 to reflow each solder bump 304 on each bonding pad 302 without heating the entire chip 300. In the present exemplary embodiment, chip 300 can be disposed on a movable table 1002 or any suitable moving device. It should be recognized that energy source 306 can be held stationary or can move relative to chip 300.
[0043] With reference to FIG. 11, in another exemplary embodiment, a positioning system 1102 can be used to investigate, locate the position of each bonding pad 302 on chip 300. In the present exemplary embodiment, positioning system 1102 is an optical image system, such as a CCD camera. As depicted in FIG. 11, positioning system 1102 can be connected to energy source 306. Positioning system 1102 and energy source 306 can be mounted on and move along an x-axis bar 1104, which can move along a y-axis bar 1106. Thus, in the present exemplary embodiment, position system 1102 and energy source 306 can be moved to any location on chip 300. [0044] 2. Flip Chip Connection
[0045] With reference to FIG. 12A, chip 300 is bonded to a substrate 1200, and is typically referred to as a flip chip. As depicted in FIG. 12 A, solder bump 304 is disposed between flip chip 300 and substrate 1200 to connect, bond flip chip 300 and substrate 1200.
[0046] Generally, a flip chip connection requires a high melting temperature of 183 degrees Celsius for a typical eutectic alloy of 63 percent Sn and 37 percent Pb, and a solder deposition time of about 10 seconds. A longer solder deposition time can lead to longer contact pressure on the dielectric layer of chip 300, which can result in defects in the dielectric layer, particularly when the dielectric layer includes low-k materials.
[0047] Thus, in the present exemplary embodiment, energy source 306 is localized to solder bump 304 disposed between flip chip 300 and substrate 1200. As depicted in FIG. 12B, localized energy source 306 heats solder bump 304 until solder bump 304 reflows into an hourglass shaped connection between flip chip 300 and substrate 1200.
[0048] With reference to FIG. 13, in one exemplary embodiment, flip chip 300 can include multiple solder bumps 304. i the present exemplary embodiment, inlay mask 802 is disposed between energy source 306 and multiple solder bumps 304. As depicted in FIG. 13, inlay mask 802 includes cutouts 804 corresponding to solder bumps 304. Thus, energy source 306 is localized on each solder bump 304 through each cutout 804 to heat each solder bump 304 to reflow each solder bump 304 without heating the entire flip chip 300.
[0049] More particularly, in the present exemplary embodiment, energy source 306 heats each solder bump 304 on flip chip 300 through solder bumps 304 on substrate 1200. Thus, in the present exemplary embodiment, a sensor 1302 is configured to scan for positioning marks 1304 on the back of substrate 1200 to position inlay mask 802 over substrate 1200. A sensor 1306 is also configured to calibrate the position of substrate 1200 relative to flip chip 300. In the present exemplary embodiment, sensors 1302 and 1306 are optical sensors. It should be recognized, however, that various types of sensors can be used.
[0050] In the present exemplar embodiment, flip chip 300 is disposed on movable table 1002, which moves flip chip 300 relative to inlay mask 802. As depicted in FIG. 13, movable table 1002 can move in an x, y, z, and theta directions. [0051] With reference to FIG. 14, in another exemplary embodiment, a heater 1402 can be used to heat flip chip 300. Heater 1402 heats flip chip 300 to reduce the amount of power needed from energy source 306. However, heater 1402 heats flip chip 300 to a temperature below the melting temperature of solder bumps 304 on flip chip 300.
[0052] With reference to FIG. 15, in another exemplary embodiment, flip chip 300 and substrate 1200 are disposed within an enclosed chamber 1502. As depicted in FIG. 15, inlay mask 802 is disposed outside enclosed chamber 1502. In the present exemplary embodiment, enclosed chamber 1502 includes a glass top 1504. Thus, energy source 306 is localized on each solder bump 304 on flip chip 300 through each cutout 804 on inlay mask 802 and through glass top 1504 to reflow each solder bump 304 without heating the entire flip chip 300.
[0053] In the present exemplary embodiment, enclosed chamber 1502 has a controlled atmosphere. As depicted in FIG. 15, enclosed chamber 1502 has a gas inlet 1504. During the reflow process when solder bumps 304 are reflowed, an inert gas, such as nitrogen, is introduced through gas inlet 1504 to reduce/prevent oxidation of solder bumps 304. After reflow, a cool gas, such as nitrogen, is introduced through gas inlet 1504 to cool down flip chip 300 and substrate 1200 to reduce/minimize the impact of heat generated during the reflow process.
[0054] With reference to FIGs. 16A, 16B, and 16C, an exemplary process to reflow solder bumps 304 on flip chip 300 is depicted. More particularly in FIG. 16A, energy source 306 is localized on solder bumps 304 on flip chip 300 using inlay mask 802 to heat solder bumps 304 above its melting point to reflow solder bumps 304 without heating the entire flip chip 300. More particularly, solder bumps 304 are heated to a temperature of 10 to 100, preferably 50, degrees Celsius higher than the melting point of solder bumps 304. hi FIG. 16B, when the temperature of solder bumps 304 on flip chip 300 is above the melting point of solder bumps 304, bonding pads or solder bumps on substrate 1200 are brought in contact with solder bumps 304 on flip chip 300. hi FIG. 16C, solder bumps 304 on flip chip 300 and bonding pads or solder bumps on substrate 1200 are kept in contact until solder bumps 304 on flip chip 300 cool to a temperature below the melting temperature of solder bumps 304 on flip chip 300.
[0055] With reference to FIGs. 17A, 17B, and 17C, in one exemplary embodiment, substrate 1200 is a printed circuit board/card. Thus, flip chip 300 is bonded to printed circuit board/card 1200. [0056] With reference to FIG. 18A, in one exemplary embodiment, flip chip 300 is disposed on movable table 1002. Movable table 1002 moves flip chip 300 between a first position below inlay mask 808 and a second position below substrate 1200. When flip chip 300 is in the first position, solder bumps 304 on flip chip 300 are heated by energy source 306 through inlay mask 808. As depicted in FIG. 18B, when flip chip 300 is in the second position, bonding pads or solder bumps on substrate 1200 are brought in contact with solder bumps 304 on flip chip 300.
[0057] With reference to FIG. 19A, in another exemplary embodiment, flip chip 300 is held stationary. Inlay mask 808 and energy source 306 are moved adjacent to flip chip 300 to heat solder bumps 304 on flip chip 300. As depicted in FIG. 19B, when solder bumps 304 on flip chip 300 have been heated, substrate 1200 is moved adjacent to flip chip 300 to bring bonding pads or solder bumps on substrate 1200 in contact with solder bumps 304 on flip chip 300. In the present exemplary embodiment, a loading robot 1902 moves substrate 1200 to bring bonding pads or solder bumps on substrate 1200 in contact with solder bumps 304 on flip chip 300.
[0058] Although exemplary embodiments have been described, various modifications can be made witliout departing from the spirit and/or scope of the present invention. Therefore, the present invention should not be construed as being limited to the specific forms shown in the drawings and described above.

Claims

CLAIMSWe claim:
1. A system for soldering electrical connection for a chip, the system comprising: a bonding pad; a solder bump; and an energy source localized to the solder bump, wherein the localized energy source does not physically contact the solder bump, and wherein the localized energy source heats the solder bump to reflow the solder bump on the bonding pad without heating the entire chip.
2. The system of claim 1, wherein the solder bump is attached to a wire.
3. The system of claim 2, wherein the solder bump and the wire are positioned on the bonding pad, and then the localized energy source heats the solder bump positioned on the bonding pad to form a wire bond to the bonding pad.
4. The system of claim 2, wherein the localized energy source heats the solder bump, and then the heated solder bump and the wire are positioned oh the bonding pad to form a wire bond to the bonding pad.
5. The system of claim 2, wherein the localized energy source heats the solder bump and the bonding pad, and then the heated solder bump is positioned on the heated bonding pad to form a wire bond to the bonding pad.
6. The system of claim 5, wherein the localized energy source comprises: a first energy source localized to the solder bump; and a second energy source localized to the bonding pad.
7. The system of claim 5, wherein the localized energy source is movable, and wherein the movable localized energy source heats the solder bump and moves to heat the bonding pad.
8. The system of claim 5, further comprising: a wetting layer formed on the bonding pad, wherein the localized energy source melts the wetting layer.
9. The system of claim 1, wherein the solder bump is disposed on the bonding pad prior to being heated by the localized energy source.
10. The system of claim 9, wherein a wire is attached to the solder bump after the solder bump is heated by the localized energy source.
11. The system of claim 10, wherein the localized energy source heats the wire and the solder bump, and then the heated wire is attached to the heated solder bump to form a wire bond to the bonding pad.
12. The system of claim 11 , wherein the localized energy source comprises: a first energy source localized to the wire; and a second energy source localized to the solder bump.
13. The system of claim 11 , wherein the localized energy source is movable, and wherein the movable localized energy source heats the wire and moves to heat the solder bump.
14. The system of claim 11 , further comprising a wetting layer formed on the bonding pad, wherein the localized energy source melts the wetting layer.
15. The system of claim 1, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps.
16. The system of claim 15, wherein the energy source includes a plurality of energy sources, wherein each of the plurality of energy sources are localized to each of the plurality of solder bumps to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
17. The system of claim 15, wherein the energy source is movable, wherein the movable energy source moves between each of the plurality of solder bumps to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
18. The system of claim 15, further comprising: a movable table, wherein the chip is disposed on the movable table, the plurality of solder bumps are disposed on the plurality of bonding pads, and wherein the movable table moves to position each of the solder bumps adjacent to the energy source to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
19. The system of claim 15, further comprising: a positioning system to locate the plurality of bonding pads.
20. The system of claim 19, wherein the energy source is movable, wherein the movable energy source is connected to the positioning system, and wherein the positioning system provides the location of the plurality of bonding pads to position the movable energy source.
21. The system of claim 15 , further comprising: an inlay mask disposed between the energy source and the plurality of solder bumps, wherein the inlay mask includes a plurality of cutouts corresponding to the plurality of solder bumps, and wherein the energy source is localized on each of the solder bumps through each of the plurality of cutouts to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
22. The system of claim 21 , further comprising: a heat exchange attached to the inlay mask to maintain the temperature of the inlay mask.
23. The system of claim 1, further comprising: a substrate, wherein the chip is a flip chip, and wherein the solder bump is disposed between the substrate and the flip chip.
24. The system of claim 23, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps.
25. The system of claim 24, further comprising: an inlay mask disposed between the energy source and the plurality of solder bumps, wherein the inlay mask includes a plurality of cutouts corresponding to the plurality of solder bumps, and wherein the energy source is localized on each of the solder bumps through each of the plurality of cutouts to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps.
26. The system of claim 25, further comprising: a sensor configured to scan for positioning marks on the substrate to position the inlay mask.
27. The system of claim 25, further comprising: a movable table, wherein the flip chip is disposed on the movable table, and wherein the movable tables moves the flip chip relative to the inlay mask.
28. The system of claim 27, further comprising: a sensor configured to calibrate the movement of the substrate relative to the flip chip.
29. The system of claim 27, further comprising: a heater disposed on the movable table to heat the flip chip, wherein the heater heats the flip chip to a temperature below the melting temperature of the plurality of solder bumps on the flip chip.
30. The system of claim 25, further comprising: an enclosed chamber, wherein the flip chip is disposed within the enclosed chamber and the inlay mask is disposed outside the enclosed chamber.
31. The system of claim 30, wherein the enclosed chamber includes a glass top.
32. The system of claim 30, wherem the enclosed chamber is filled with an inert gas when the plurality of solder bumps are reflowed to prevent oxidation of the plurality of solder bumps, and wherein the enclosed chamber is filled with a cool gas after the plurality of solder bumps have been reflowed.
33. The system of claim 25, wherein a plurality of solder bumps are located on the flip chip and a plurality of bonding pads or solder bumps are located on the substrate, wherein the plurality of solder bumps on the flip chip are heated through the inlay mask to a temperature above the melting temperature of the plurality of solder bumps on the flip chip, and wherein the plurality of bonding pads or solder bumps on the substrate are brought in contact with the plurality of solder bumps on the flip chip while the temperature of the plurality of solder bumps on the flip chip is above the melting temperature of the plurality of solder bumps on the flip chip.
34. The system of claim 33, further comprising: a movable table, wherein the flip chip is disposed on the movable table, wherein the movable table moves the flip chip from a first position below the inlay mask to a second position below the substrate, wherein the plurality of solder bumps on the flip chip are heated when the flip chip is in the first position, and wherein the plurality of bonding pads or solder bumps on the substrate are brought in contact with the plurality of solder bumps on the flip chip when the flip chip is in the second position.
35. The system of claim 33, wherein the flip chip is held stationary, wherein the inlay mask and energy source are moved adjacent to the flip chip to heat the plurality of solder bumps on the flip chip, and wherein the substrate is moved adjacent to the flip chip to bring the plurality of bonding pads or solder bumps on the substrate in contact with the plurality of solder bumps on the flip chip.
36. The system of claim 35, further comprising: a loading robot attached to the substrate.
37. The system of claim 23, wherein the substrate is a printed circuit board or card.
38. The system of claim 1, further comprising: a layer of the chip having a low dielectric constant, wherein the bonding pad is disposed on the layer.
39. A method for soldering electrical connection for a chip, the method comprising: localizing an energy source to a solder bump without physically contacting the solder bump; and heating the solder bump to reflow the solder bump on a bonding pad on the chip using the localized energy source without heating the entire chip.
40. The method of claim 39, wherem the solder bump is attached to a wire.
41. The method of claim 40, further comprising: positioning the solder bump and the wire on the bonding pad before heating the solder bump, wherein the localized energy source heats the solder bump positioned on the bonding pad to form a wire bond to the bonding pad.
42. The method of claim 40, wherein heating the solder bump comprises: heating the solder bump attached to the wire; and positioning the heated solder bump attached to the wire on the bonding pad to form a wire bond to the bonding pad.
43. The method of claim 40, further comprises: heating the bonding pad using the localized energy source without heating the entire chip; and positioning the heated solder bump on the heated bonding pad to form a wire bond to the bonding pad.
44. The method of claim 43, wherein the localized energy source comprises: a first energy source localized to the solder bump; and a second energy source localized to the bonding pad.
45. The method of claim 43, wherein the localized energy source is movable, and further comprising: moving the movable localized energy source adjacent to the solder bump; heating the solder bump using the movable localized energy source; moving the movable localized energy source adjacent to the bonding pad; and heating the bonding pad using the movable localized energy source.
46. The method of claim 43, further comprising: melting a wetting layer formed on the bonding pad using the localized energy source.
47. The method of claim 39, wherein the solder bump is disposed on the bonding pad prior to being heated by the localized energy source.
48. The method of claim 47, further comprising: attaching a wire to the solder bump after the solder bump is heated by the localized energy source.
49. The method of claim 48, wherein the localized energy source heats the wire and the solder bump, and then the heated wire is attached to the heated solder bump to form a wire bond to the bonding pad.
50. The method of claim 49, wherein the localized energy source comprises: a first energy source localized to the wire; and a second energy source localized to the solder bump.
51. The method of claim 49, wherein the localized energy source is movable, and further comprising: moving the movable localized energy source adjacent to the wire; heating the wire using the movable localized energy source; moving the movable localized energy source adjacent to the solder bump; and heating the solder bump using the movable localized energy source.
52. The method of claim 49, further comprising: melting a wetting layer formed on the bonding pad using the localized energy source.
53. The method of claim 39, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps.
54. The method of claim 53, wherein the energy source includes a plurality of energy sources, wherein each of the plurality of energy sources are localized to each of the plurality of solder bumps to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
55. The method of claim 53, wherein the energy source is movable, wherein the movable energy source moves between each of the plurality of solder bumps to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
56. The method of claim 53, further comprising: moving the chip using a movable table to position each of the solder bumps adjacent to the energy source to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
57. The method of claim 53, further comprising: locating the plurality of bonding pads using a positioning system.
58. The method of claim 57, wherein the energy source is movable, wherein the movable energy source is connected to the positioning system, and wherein the positioning system provides the location of the plurality of bonding pads to position the movable energy source.
59. The method of claim 53, wherein localizing an energy source comprises: localizing the energy source on each of the solder bumps through each of a plurality of cutouts on an inlay mask to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps on each of the plurality of bonding pads without heating the entire chip.
60. The method of claim 59, further comprising: maintaining the temperature of the inlay mask using a heat exchange.
61. The method of claim 39, wherein the chip is a flip chip, and wherein the solder bump is disposed between a substrate and the flip chip.
62. The method of claim 61, wherein the bonding pad includes a plurality of bonding pads, and the solder bump includes a plurality of solder bumps.
63. The method of claim 62, wherein localizing an energy source comprises: localizing the energy source on each of the solder bumps through each of a plurality of cutouts on an inlay mask to heat each of the plurality of solder bumps to reflow each of the plurality of solder bumps.
64. The method of claim 63, further comprising: scanning for positioning marks on the substrate using a sensor to position the inlay mask.
65. The method of claim 63 , further comprising: moving the flip chip relative to the inlay mask using a movable table, wherein the flip chip is disposed on the movable table.
66. The method of claim 65, further comprising: calibrating the movement of the substrate relative to the flip chip using a sensor.
67. The method of claim 65, further comprising: heating the flip chip using a heater disposed on the movable table, wherein the flip chip is heated to a temperature below the melting temperature of the plurality of solder bumps on the flip chip.
68. The method of claim 63, wherein the flip chip is disposed within an enclosed chamber and the inlay mask is disposed outside the enclosed chamber.
69. The method of claim 68, wherein the enclosed chamber includes a glass top.
70. The method of claim 68, further comprising: introducing an inert gas into the enclosed chamber before the plurality of solder bumps have been reflowed to prevent oxidation of the plurality of solder bumps; and introducing a cool gas into the enclosed chamber after the plurality of solder bumps have been reflowed.
71. The method of claim 63, wherein heating the solder bump comprises: heating a plurality of solder bumps on the flip chip through the inlay mask to a temperature above the melting temperature of the plurality of solder bumps on the flip chip; and contacting a plurality of bonding pads or solder bumps on the substrate with the plurality of solder bumps on the flip chip while the temperature of the plurality of solder bumps on the flip chip is above the melting temperature of the plurality of solder bumps on the flip chip.
72. The method of claim 71 , further comprising: moving the flip chip using a movable table from a first position below the inlay mask to a second position below the substrate, wherein the plurality of solder bumps on the flip chip are heated when the flip chip is in the first position, and wherein the plurality of bonding pads or solder bumps on the substrate are brought in contact with the plurality of solder bumps on the flip chip when the flip chip is in the second position.
73. The method of claim 71 , further comprising: holding the flip chip stationary; and moving the inlay mask and energy source adjacent to the flip chip to heat the plurality of solder bumps on the flip chip; and moving the substrate adjacent to the flip chip to bring the plurality of bonding pads or bonding bumps on the substrate in contact with the plurality of solder bumps on the flip chip.
74. The method of claim 73, wherein the substrate is moved using a loading robot attached to the substrate.
75. The method of claim 61, wherein the substrate is a printed circuit board or card.
76. The method of claim 39, further comprising: a layer of the chip having a low dielectric constant, wherein the bonding pad is disposed on the layer.
PCT/US2003/040638 2002-12-18 2003-12-18 Localized reflow for wire bonding and flip chip connections WO2004057648A2 (en)

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TW200421501A (en) 2004-10-16
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AU2003303155A8 (en) 2004-07-14

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