WO2004055427A1 - 半導体発光装置及びその製法並びに線状光源 - Google Patents
半導体発光装置及びその製法並びに線状光源 Download PDFInfo
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- WO2004055427A1 WO2004055427A1 PCT/JP2003/015242 JP0315242W WO2004055427A1 WO 2004055427 A1 WO2004055427 A1 WO 2004055427A1 JP 0315242 W JP0315242 W JP 0315242W WO 2004055427 A1 WO2004055427 A1 WO 2004055427A1
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- WIPO (PCT)
- Prior art keywords
- light
- light guide
- light emitting
- semiconductor
- reflector
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/61—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
- G02B6/001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type the light being emitted along at least a portion of the lateral surface of the fibre
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that converts point light emitted from a semiconductor light emitting element into linear light and emits it.
- a transmissive liquid crystal display (LCD) using a cold cathode fluorescent tube (CCFL) as a light source for a backlight is known.
- Such a liquid crystal display is widely used for a TV monitor, a notebook computer, a liquid crystal display of a mobile phone, and the like.
- a cold cathode fluorescent tube when a voltage is applied between a pair of external leads, a discharge is generated between the discharge electrodes, and the mercury in the glass tube is excited by electric energy to generate ultraviolet rays.
- the phosphor layer on the inner surface of the glass tube is irradiated with ultraviolet light
- the phosphor layer excited by the ultraviolet light emits visible light having a wavelength determined by the type of phosphor, and the visible light is emitted to the outside through the glass tube.
- three types of phosphors emitting three primary colors of red light, green light and blue light are mixed at an appropriate ratio and used in a phosphor layer
- the light emission of the three types of phosphors is mixed, and light is white light having three primary color components. Can be emitted from the cold cathode fluorescent tube.
- cold-cathode fluorescent tubes used as backlights in liquid crystal displays have emission spectra with sharp peaks in blue, green, and red, respectively, and the blue, green, and red colors that make up the primary color pixels of liquid crystal displays.
- Color fills have a wide range of transmission vectors.
- the transmitted light spectrum of each of the three primary colors, blue, green and red is effectively determined by the emission spectrum of a cold cathode fluorescent tube. It only filters out the transmission spectrum of one pixel (eg, red) and prevents other two primary color components (eg, green and blue) from being mixed into the transmission spectrum of one pixel. It is difficult to express colors with high color purity using only the color.
- NTSC National Television System on Computer System
- NTSC National Television System on Computer System
- the white light obtained by the cold cathode fluorescent tube has a red component and a green component.
- red component has a red component and a green component.
- red color rendering properties Liquid crystal displays that use white light from a cold cathode fluorescent tube as a backlight source cannot meet the NTSC regulations and produce bright red light. Cannot be displayed.
- a method using a semiconductor light emitting device such as a light emitting diode (LED) instead of a cold cathode fluorescent tube has been attempted as a light source for a backlight.
- Semiconductor light-emitting elements are more resistant to mechanical shock, generate less heat, do not require high-voltage application, and do not require high-frequency noise, compared to incandescent bulbs, hot-cathode fluorescent tubes, or cold-cathode fluorescent tubes that constitute a tube-type white light source. It has excellent characteristics such as no generation of mercury, no use of mercury and environmental friendliness.
- a semiconductor light emitting device In a case where a semiconductor light emitting device is applied to a well-known side edge type backlight in which a light emitting device is arranged at an edge of a liquid crystal display, the light emitting device is directed toward a side end surface of a transparent light guide plate formed of a light transmitting resin such as an acrylic resin. And a plurality of semiconductor light emitting elements are arranged. The light of the semiconductor light emitting element enters the light guide plate from the side end surface of the light guide plate, is reflected in the light guide plate, is emitted outside from one surface of the light guide plate, and illuminates the liquid crystal panel from behind (for example, Japanese Patent Application Laid-Open No. 200-43036 (see pages 3 and 4, FIGS. 1 and 3).
- an object of the present invention is to provide a semiconductor light emitting device that converts light from a semiconductor light emitting element, which is a point light source, into linear light that emits light with substantially uniform luminance, a method for manufacturing the same, and a linear light source. I do. Disclosure of the invention
- the semiconductor light emitting device comprises a rod-shaped light guide (2), a pair of metal heat sinks (4) disposed at both ends (2a) of the light guide (2), and a light guide ( A semiconductor light emitting element (3) fixed to each of the pair of heat radiating plates (4) opposite to 2).
- a semiconductor light emitting element (3) fixed to each of the pair of heat radiating plates (4) opposite to 2.
- light emitted from the semiconductor light emitting element (3) is made to enter the light guide (2) directly from both ends (2a) to minimize the amount of light leakage and efficiently operate the light guide (
- the light from the semiconductor light emitting element (3) can be introduced into the light guide (2), and the outer circumferential surface (2) of the light guide (2) has substantially uniform brightness over the entire length of the outer circumferential surface (2b) of the light guide (2). From 2b), it can be converted to linear light emitted to the outside.
- the red light component and the green light component are insufficient for the light emission component emitted from the conventional cold cathode fluorescent tube, but the light emission component of the semiconductor light emitting device (3) contains a sufficient amount of the red light component and the green light component. Therefore, light can be emitted with a light emission color with a good color tone balance.
- FIG. 1 is a sectional view showing an embodiment of a semiconductor light emitting device according to the present invention.
- FIG. 2 is a sectional view showing another embodiment of the semiconductor light emitting device according to the present invention.
- FIG. 3 is a perspective view showing a light emitting diode device.
- Figure 4 is a plan view showing the leadframe assembly
- FIG. 5 is a sectional view showing a semiconductor light emitting device constituting a reflector having a stepped portion.
- FIG. 6 is a sectional view showing a semiconductor light emitting device constituting a light guide bent substantially in an L-shape. Perspective view showing a light guide having a light reflection film formed on a portion
- Figure 8 is a perspective view showing the light guide surrounded by an external reflector.
- Figure 9 is a graph showing the chromaticity reproducibility of the CIE color system
- FIG. 10 is a sectional view showing an embodiment of a linear light source according to the present invention.
- FIG. 11 is a cross-sectional view showing another embodiment of the linear light source according to the present invention.
- FIG. 12 is a perspective view showing a method of providing a half-mirror layer on the light guide by holding one half mirror by the cut light guide.
- FIG. 13 is a perspective view showing a method of depositing a thin film layer on the cut surface of the cut light guide and providing a half mirror layer on the light guide.
- Fig. 14 is a cross-sectional view showing a linear light source in which two pairs of half mirror layers are provided for one pair of total reflection mirrors.
- Fig. 15 is a cross-sectional view showing a linear light source constituting a light guide bent substantially in an L-shape.
- Fig. 16 is a perspective view showing a light guide having a light reflection film formed partially.
- FIG. 17 is a perspective view showing a light guide surrounded by an external reflector.
- FIG. 18 is a cross-sectional view showing a linear light source constituting a reflector having a step portion.
- a semiconductor light emitting device comprises a rod-shaped light guide (2), and both ends (2a) of the light guide (2).
- the light guide (2) is formed of a transparent or translucent glass or a light guide resin such as an epoxy resin, an acrylic resin, a polyimide resin, or a poly-ponate resin.
- Fig. 1 shows a semiconductor light emitting device (1) including a hollow cylindrical light guide (2) having a cavity (2d), and
- Fig. 2 shows a solid cylindrical shape without a cavity.
- FIG. 1 shows a semiconductor light emitting device (1) including a light guide (2) obtained.
- the hollow portion (2d) of the cylindrical light guide (2) is filled with, for example, air or a gas such as nitrogen.
- a transparent or translucent gel-like or solid resin may be arranged or filled in the cavity (2d).
- a light emitting diode device (la) including a heat sink (4) and a light emitting diode chip (3) fixed to the heat sink (4) is paired. Formed.
- the light emitting diode device (la) according to the present embodiment has a metal radiator plate (4) having a circular concave portion (4c) formed therein, and a radiator plate (4).
- Reflector (5) and an internal cavity (5d) having one electrode (lower electrode) electrically connected to the radiator plate (4) and surrounded by the inner surface (5a) of the reflector (5) And a light emitting diode chip (3) fixed on the concave portion (4c) of the heat sink (4).
- the light emitting diode device (la) further includes a first external lead (9a) electrically connected to the heat sink (4) and the other electrode (top surface) of the light emitting diode chip (3).
- a second external lead (9b) electrically connected to the light emitting diode chip (3) and the second external lead (9b).
- the radiator plate (4) is made of metal such as copper, aluminum, copper alloy or aluminum alloy having a thermal conductivity of 190 kcal / mh ° C or more, and the reflector (5) constitutes the radiator plate (4) It is formed of the same conductive metal as the metal.
- the reflector (5) When a large current of about 100 mA flows through the light emitting diode chip (3) to emit light of high brightness from the light emitting diode chip (3), the heat generated from the light emitting diode chip (3) is dissipated by the heat sink (4). ) And the reflector (5) to emit light to the outside, so that the light emitting diode chip (3) can be continuously lit with high brightness for a long time.
- the reflector (5) is positioned within the concave portion (4c) of the heat sink (4), and is adhered to the heat sink (4) with an insulating adhesive (12) such as a thermosetting epoxy resin, for example.
- an insulating adhesive (12) such as a thermosetting epoxy resin, for example.
- One main surface (4a) of the heatsink (4) is exposed in the internal cavity (5d) of 5).
- the minimum inside diameter of the internal cavity (5d) of the reflector (5) is larger than the width (side length) of the light emitting diode chip (3), and the heat sink exposed in the internal cavity (5d) of the reflector (5)
- the light emitting diode chip (3) is fixed to one main surface (4a) of the (4) by the conductive adhesive (13), the light emitting diode chip (3) is fixed by the inner surface (5a) of the reflector (5).
- the reflector (5) enables the light emitting diode chip (3) to emit light with high output and good luminance uniformity.
- the reflector (5) of the present embodiment has a main body (5f) having a conical internal cavity (5d) in the center and formed in a columnar shape as a whole.
- a notch (5e) formed linearly between the light emitting diode chip (3) and the second outer rail (9b), penetrating from the inner cavity (5d) to the side surface (5b). Having.
- the lead wire (10) is connected to the light emitting diode chip (3) and the second external lead (9b) through the notch (5e).
- the resin sealing body (7) is formed of a thermosetting resin such as epoxy.
- the lens portion (11) is formed in a substantially hemispherical shape by a light-transmitting resin. However, if the light emitted to the outside of the light emitting diode chip (3) has sufficient directivity by the reflector (5), The lens section (11) may be omitted.
- the lead shown in FIG. 4 is formed by pressing a band-shaped metal formed of copper, aluminum, or an alloy thereof. Prepare the frame assembly (19).
- the lead frame assembly (19) includes openings (19a) formed at regular intervals, and a plurality of external leads (9) projecting into the openings (19a).
- a heat sink (4) having a circular recess (4c) is formed in the opening (19a).
- a reflector (5) is bonded into the concave portion (4c) of the heat sink (4) via an insulating adhesive (12).
- a heat sink (4) having a reflector (5) formed on the body may be prepared. .
- a conductive adhesive (13) such as solder or conductive paste.
- the light emitting diode chip (3) is fixed on one main surface (4a).
- the electrode (8) of the light emitting diode chip (3) and the external lead (9) are electrically connected by the thin lead wire (10), and the side surface (4b) of the heat sink (4) and one main surface are formed.
- a sealing resin (7) covering the side surface (5b) of the reflector (5) and the inner end (9a) of the outer lead (9) is formed.
- both ends (2a) of the rod-shaped light guide (2) face the light emitting diode chip (3) and are connected to the reflector (5).
- the light emitting diode chip (3) includes a semiconductor substrate, an anode electrode and a power source electrode formed on one main surface and the other main surface of the semiconductor substrate, respectively. It is electrically connected to the board (4). Further, the other electrode of the light emitting diode chip (3) and the second external lead (9b) are connected by a known thin wire (10) by a known wire bonding method.
- the lead frame assembly 9) is mounted in a molding die (not shown), and the side surface (4b) of the radiator plate (4), one main surface (4a), and the side surface of the reflector (5) are formed by a known transfer molding method.
- the formation of the resin sealing body (7) is not limited to the formation by the transfer molding method, and may be formed by a well-known potting method.
- the light emitting diode device (1) and the light guide are formed by placing the light emitting diode device (la) and the light guide (2) at predetermined positions in advance and forming a resin sealing body (7) by a potting method.
- the thin lead wire (10) does not pass through the upper surface (5c) of the reflector (5), it is difficult to break the wire, and the reliability of the light emitting diode device (la) can be improved.
- the diameter of the inner surface (5a) of the reflector (5) can be reduced to reduce the size of the reflector (5). Since the diameter of the inner surface (5a) can be reduced and the height can be increased, the light directivity and the front luminance can be improved.
- the structure surrounding the light emitting diode chip (3) by the heat sink (4) and the reflector (5) prevents the intrusion of foreign matter such as moisture from the outside, suppresses the deterioration of the light emitting diode chip (3), and improves reliability.
- a highly efficient structure can be realized.
- the connection between the light emitting diode chip (3) and the external leads (9) may be performed by a bump chip type light emitting diode chip (not shown) without using the lead wires (10).
- both ends (2a) of the light guide (2) and the light emitting diode device (1a) are formed by a sealing resin (4) surrounding the heat sink (4) and the reflector (5).
- Both ends (2a) of the light guide (2) are fitted and fixed in the annular recess (7a) formed in 7). Therefore, since the light emitted from the semiconductor light emitting element (3) is directly incident on the light guide (2) from both ends (2a), the amount of light leakage is minimized and the light guide ( Light from the semiconductor light emitting device (3) can be introduced into 2).
- a step (15) is provided on the side surface (5b) of the reflector (5) as shown in FIG.
- the both ends (2a) of the light guide (2) and the light emitting diode device (la) may be fixed by bringing both ends (2a) into contact with the step (15).
- the semiconductor light emitting device (1) of the present embodiment when a current is applied to the external lead (9) to cause the light emitting diode chip (3) to emit light, the light of the light emitting diode chip (3) is reflected by the reflector (5) and The light enters the light guide (2) from both ends (2a) of the light guide (2) with high directivity and frontal brightness by the lens portion (11).
- the conical surface of the reflector (5) is a light emitting diode chip
- the light emitted from (3) is favorably reflected toward the lens section (11).
- the semiconductor light emitting device (1) shown in Fig. 1 has a conical surface inclined with respect to the bottom surface in order to focus light emitted from the light emitting diode chip (3) with high directivity through the lens unit (11). The angle is set to 30 ° or more.
- light emitted from the light emitting diode chip (3) is made to enter the light guide (2) from both ends (2a), and from the outer peripheral surface (2b) of the light guide (2).
- Light is emitted outside of 2).
- the light of the light emitting diode chip (3) incident on the light guide (2) from both ends (2a) of the light guide (2) changes at a position close to the light emitting diode chip (3) depending on the incident angle.
- the light emitted from the light guide (2) or reflected in the light guide (2) or the cavity (2d) is guided at a position relatively far from the light emitting diode chip (3) of the light guide (2). It is emitted outside the light body (2).
- the semiconductor light-emitting device (1) is configured such that the light-emitting diode chip (3) emitted from the outer peripheral surface (2b) of the light guide (2) is set by appropriately setting the length of the rod-shaped light guide (2). Can be emitted with substantially uniform brightness over the entire length of the outer peripheral surface (2b) of the light guide (2).
- the light guide (2) may have a light scattering material mixed therein. In particular, in the light guide (2) having no cavity (2d), the light scattering material allows the light guide (2) to emit light over the entire length of the outer peripheral surface (2b) more favorably. . Further, in the light guide (2) having the cavity (2d), the cavity (2d) may be filled with a substance such as resin, and a light scattering material may be mixed therein.
- the light guide (2) is not limited to the linear shape shown in FIGS. 1 and 2, but also has a bent shape such as a substantially L shape or a curved shape (not shown) as shown in FIG. It may be formed.
- the light guide (2) has a light reflection film (6) formed on at least a part of the outer peripheral surface (2ti) or the inner peripheral surface (2c) of the light guide (2). May be. With this configuration, light reflected by the light reflecting film (6) can be emitted with higher luminance from the light emitting portion where the light reflecting film (6) is not formed.
- the light guide (2) in FIG. 7 is formed in a hollow cylindrical shape, and is provided with a metal vapor-deposited film such as gold or aluminum only on one half of the outer peripheral surface (2b).
- the light generated in the light guide (2) is reflected by one outer peripheral surface (2b) and concentrated on the other outer peripheral surface (2b), so that the light from the other outer peripheral surface (2b) of the light guide (2) Light to be extracted can be increased.
- an external reflector (14) that is installed separately from the light guide (2) and surrounds the light guide (2) may be configured.
- External reflector (14) is made of gold such as aluminum It has the same effect as the light reflection film (6).
- the semiconductor light emitting device can be used, for example, as a light source for a backlight of a liquid crystal display.
- a single semiconductor light emitting device (1) or a plurality of semiconductor light emitting devices (1) are arranged in the width direction of the side end surface of the light guide plate, and linear light of the semiconductor light emitting device (1) is transmitted from the side end surface of the light guide plate. The light enters the light guide plate.
- the linear light of the semiconductor light emitting device (1) is reflected in the light guide plate, emitted from one side of the light guide plate to the outside, and illuminates the liquid crystal panel from behind.
- the semiconductor light emitting device of the present invention illuminates the liquid crystal panel from behind by inputting linear light, not point light, into the light guide plate, so that it is possible to illuminate the liquid crystal panel with less brightness unevenness.
- a semiconductor light emitting device of the present invention is used as a backlight light source, for example, a plurality of blue, green, and red semiconductor light emitting devices (1) are arranged side by side in the length direction.
- a plurality of semiconductor light emitting devices (1) of different colors may be arranged side by side in the thickness direction of the light guide plate.
- one semiconductor light emitting device (1) may be configured by combining light emitting diodes of different colors.
- the shape of the light guide (2) is not limited to a cylindrical shape or a column shape, and may be, for example, a rectangular tube or a prism according to the shape of the side end surface of the light guide plate.
- light from a light emitting diode which is a point light source, is converted into linear light that emits light with substantially uniform luminance, and one surface of the light guide plate can emit light with uniform luminance and good color tone balance. It can be used favorably as a light source for light.
- the semiconductor light emitting device of the present invention may be used in combination with a conventional cold cathode fluorescent tube.
- the red component and the green component are insufficient for the luminescent component emitted from the cold cathode fluorescent tube, but the luminescent component of the light emitting diode chip (3) has a sufficient amount of red Component and a green component, it is possible to emit light in a light emission color with a good color balance, and by combining the semiconductor light emitting device of the present invention, it is possible to compensate for the drawbacks of the cold cathode fluorescent tube.
- the semiconductor light emitting device of the present invention is applied to a backlight light source, not only a side edge type backlight in which the light emitting device is arranged at the edge of the liquid crystal display, but also the light emitting device is arranged below the liquid crystal panel. Any known direct-type backlight may be used.
- Light from a light emitting diode which is a point light source, can be converted to linear light that emits light with substantially uniform luminance and good color tone balance by the light guide (2).
- the power generated by the light emitting diode chip (3) can be dissipated to the outside through the heat sink (4) and the reflector (5), and the light emitting diode chip (3) can be lit with high brightness for a long time. .
- Light can be emitted with substantially uniform brightness over the entire length direction of the outer peripheral surface (2b) of the rod-shaped light guide (2) whose length can be appropriately set.
- the light emission component of the cold cathode fluorescent tube can be supplemented by the light emission of the semiconductor light emitting device (1).
- the reflector (5) enables the light-emitting diode chip (3) to emit light with high output and good luminance uniformity.
- a cylindrical light guide (2) was formed of glass, and the cavity (2d) was filled with air to produce a semiconductor light emitting device (1).
- the current value flowing through the light emitting diode chip (3) was set to 100 mA.
- the light source for the backlight of the liquid crystal screen was constructed by combining the semiconductor light emitting devices (1) that emit blue, green, and red light. As a result, one surface of the light guide plate was surface-emitted with a good color balance by linear light emitted with substantially uniform luminance.
- FIG. 9 shows a comparison between the present invention and a cold-cathode fluorescent tube based on the chromaticity reproducibility based on the CIE (International Commission on Illumination) color system. The graph in FIG. 9 shows the chromaticity reproduction region.
- CIE International Commission on Illumination
- the semiconductor light emitting device according to the present invention uses only the blue component compared to a cold cathode fluorescent tube in which the red and green components are insufficient for the chromaticity reproduction region specified by the NTSC.
- the red and green components were also sufficient. In particular, it is possible to obtain the red color rendering properties lacking in conventional cold cathode fluorescent tubes, The provision of c was achieved.
- the same effect as described above was also obtained by combining a white cold cathode fluorescent tube with a semiconductor light emitting device (1) that emits red light. Furthermore, the same effect as described above was obtained by combining the blue and green cold cathode fluorescent tubes with the semiconductor light emitting device (1) that emits red light.
- a plurality of semiconductor light emitting devices (1) can be combined with the size of the display, and a backlight light source with high output and excellent luminance uniformity can be supplied even on a large screen. Therefore, it has been found that the semiconductor light emitting device of the present invention can be favorably used alone or in combination with a cold cathode fluorescent tube as a light source for a backlight of a liquid crystal display.
- a linear light source (1) includes a rod-shaped light guide (2) having a light emitting surface (2e), and a light guide ( A light-emitting diode chip (3) as a semiconductor light-emitting element for introducing light into the light guide (2) from each of the two ends (2a) of (2); and a light-emitting diode provided on the light guide (2) and emitting light. It has a pair of half mirror layers (20) for reflecting light introduced into the light guide (2) from the diode chip (3) to the outside of the light guide (2) through the light emitting surface (2e).
- the light guide (2) is made of a transparent or translucent glass or a light guide resin such as an epoxy resin, an acrylic resin, a polyimide resin, or a polyphenylate resin.
- Fig. 10 shows a linear light source (1) including a light guide (2) formed in a hollow cylindrical shape having a cavity (2d).
- Fig. 11 shows a solid cylindrical shape without a cavity.
- 1 shows a linear light source (1) including a formed light guide (2).
- the hollow portion (2d) of the light guide (2) formed in a cylindrical shape is filled with a gas such as air or nitrogen, for example.
- a transparent or translucent gel-like or solid resin may be arranged or filled in the cavity (2d).
- the half mirror constituting the half mirror layer (20) is also called a translucent mirror or a dielectric multilayer mirror, and is formed by a well-known manufacturing method such as a vacuum evaporation method, and has a refractive index, a thickness, or the number of layers of the film. Transmits, reflects, and absorbs light in a specific wavelength range using the interference and absorption of light by changing.
- the half-mirror layer (20) of the present embodiment is a dielectric multilayer film in which a high-refractive-index dielectric and a low-refractive-index dielectric having an optical film thickness of 1/4 wavelength are repeated, and a part of the incident light. Transmits through and reflects others.
- a translucent thin film of titanium dioxide on a glass substrate (T i 0 2) (high refractive index), translucent film of silicon dioxide (S i 0 2) (low refractive
- T i 0 2 high refractive index
- S i 0 2 translucent film of silicon dioxide
- S i 0 2 low refractive
- the configuration of the half mirror layer (20) is not limited to a dielectric thin film, and a metal thin film may be used. However, it is preferable to use a dielectric thin film that absorbs less light.
- the half-mirror layer (20) crosses the center line of the light guide (2) and is inclined at a certain angle with respect to the center line. Are provided in a plurality.
- the half mirror layer (20) deflects visible light from the light emitting diode chip (3) to emit light with more uniform brightness over the entire length of the light emitting surface (2e) of the light guide (2). be able to.
- the plate-shaped half mirror layer (20) is sandwiched between a plurality of blocks (2g) of the light guide (2).
- a rod-shaped light guide (2) is cut at an angle with respect to the outer peripheral surface (2b) to form a half-shaped disk.
- the light guide (2) is formed by holding the mirror layer (20) at the cut surface (2f) of the light guide (2) and fixing the half mirror layer (20) and the cut surface (20). Although not shown, the light guide (2) may be cut without cutting the light guide (2), and a disc-shaped half mirror layer (20) may be attached to the groove.
- At least one of the inclined surfaces formed on the plurality of blocks (2g) of the light guide (2) has a half mirror layer. (20) is formed by vapor deposition, and the inclined surfaces of the blocks (2g) are brought into contact with each other. As shown in Fig. 13, a solid cylindrical light guide (2) is cut in an inclined shape, and a dielectric thin film or metal thin film is deposited on one cut surface (2f) to form a half mirror. The layer (20) is formed, and after the thin film is deposited, the cut surface (2) of the light guide (2) is fixed to form the light guide (2).
- the angle of the half mirror layer (20) provided on the light guide (2) is such that the visible light of the light emitting diode chip (3) is emitted with uniform brightness from the light emitting surface (2e) of the light guide (2).
- the size of the light guide (2) and the number and arrangement of the half mirror layers (20) are determined as appropriate.
- the linear light source according to the present invention includes a total reflection mirror layer (21) that reflects light transmitted through the half mirror layer (20) to the outside of the light guide (2) through the light emitting surface (2e). It is provided inside the light guide (2) inside the mirror layer (20).
- the total reflection mirror layer (21) is formed, for example, by attaching silver to a glass plate, and the light guide (2) is formed in the same manner as the half mirror layer (20) described above. Is provided.
- the total reflection mirror layer (21) is provided on the center side of the light guide (2) with respect to the pair of half mirror layers (20), and the light emitting diode chip (2) is provided on the center side of the light guide (2). From 3), the amount of visible light applied to the light emitting surface (2e) of the light guide (2) can be increased.
- the half mirror layer (20) and the total reflection mirror layer (21) are formed inside the light guide (2) by the outer peripheral surface (2b) of the light emitting diode chip (3) and the light guide (2). It is installed at an angle with respect to.
- the visible light emitted from the light emitting diode chip (3) is emitted in a direction substantially perpendicular to the emitting surface (2e) of the light guide (2).
- the half mirror layer (20) and the total reflection mirror layer (21) may be installed on the light guide (2) at the same angle as shown in FIGS. 10 and 11, but at different angles. May be installed.
- the light of the light emitting diode chip (3) introduced from the two ends (2a) of the light guide (2) is reflected by the half mirror layer (20) or transmitted through the half mirror layer (20). After that, the light is reflected by the total reflection mirror layer (21) and emitted to the outside of the light guide (2) through the light emitting surface (2e).
- the linear light source (1) shown in FIGS. 10 and 11 includes an eighty-first mirror layer (20) and a total reflection mirror layer (2 1) provided in the light guide (2) in pairs.
- two pairs or more half mirror layers (20) may be provided for a pair of total reflection mirror layers (21).
- the light reflectance can be set lower and the light transmittance can be set higher.
- the brightness of the light from the light-emitting diode chip (3) decreases as it travels in the length direction of the light guide (2), but the reflectivity of the light-emitting diode chip (20) decreases as it approaches the light-emitting diode chip (3).
- the transmittance is set low and the transmittance is set high, the difference in the amount of reflected light between the half mirror (20a) near the light emitting diode chip (3) and the half mirror (20b) far from the light emitting diode chip (3) is reduced.
- the light of the light emitting diode chip (3) can be emitted to the outside of the light guide (2) with more uniform brightness.
- the light guide (2) is formed into a bent shape such as a substantially L shape or a curved shape (not shown). Is also good.
- the substantially L-shaped linear light source (1) shown in FIG. 15 the light reflectance and light transmittance of the half mirror layer (20) are set or a plurality of half mirror layers (20) and a total reflection mirror layer (21) are provided. Separation distance Alternatively, by appropriately setting the installation angle, the amount of visible light emitted from the light emitting surface (2e) of the bent light guide (2) can be balanced or adjusted.
- the linear light source (1) of the present embodiment as shown in FIG.
- the light guide (2) is formed on the outer circumferential surface (2b) or the inner circumferential surface (2c) of the light guide (2).
- the light reflection film (6) may be formed at least partially. With this configuration, light reflected by the light reflecting film (6) can be emitted with higher luminance from the light emitting surface (2e) where the light reflecting film (6) is not formed.
- the light guide (2) in FIG. 16 is formed in a hollow cylindrical shape, and is provided with a metal deposition film of gold or aluminum or the like only on one half of the outer peripheral surface (2b). The light generated in the light guide (2) is reflected by the light reflecting film (6) and is concentrated on the light emitting surface (2e), so that the light extracted from the light emitting surface (2e) of the light guide (2) is Can be increased.
- an external reflector (14) that is installed separately from the light guide (2) and surrounds the light guide (2) may be configured.
- the external reflector (14) is formed of a metal such as aluminum or a nonmetal such as a white resin, and has the same effect as the light reflection film (6).
- a light emitting diode device (1a) is provided at two ends (2a) of the light guide (2).
- the light emitting diode device (la) is the same as the light emitting diode device (la) shown in FIGS. 3 and 4 of the semiconductor light emitting device (1) described above and its manufacturing method.
- the end portion (2a) of the light guide (2) and the light emitting diode device (la) are composed of a heat sink (4) and a sealing resin surrounding the reflector (5).
- the end (2a) of the light guide (2>) is fitted and fixed in the annular recess (7a) formed in (7), so that the light emitted from the light emitting diode chip (3) is
- the light from the light emitting diode chip (3) is guided to the light guide (2) efficiently by directing the light directly into the light guide (2) from the end (2a) and minimizing the amount of light leakage.
- a step (15) is provided on the side surface (5b) of the reflector (5) as shown in FIG.
- the end (2a) of the light body (2) may be brought into contact with the step (15) to fix the end (2a) of the light guide (2) and the light emitting diode device (la).
- the visible light emitted from the light emitting diode chip (3) is directly incident on the light guide (2) from the two ends (2a) to minimize the amount of light leakage.
- the visible light from the light emitting diode chip (3) is efficiently introduced into the light guide (2).
- the light-emitting diode chip (3) is either directly or after being reflected by the inner surface (5a), then the length of the light guide (2). Since it is close to a point light source that allows visible light to enter the light guide (2) almost parallel to the direction, the visible light directly emitted from the light emitting diode chip (3) to the light emitting surface (2e) of the light guide (2) The amount of light is extremely small.
- the visible light from the light emitting diode chip (3) is reflected by the half-mirror layer (20) so that the visible light is emitted with substantially uniform brightness over the entire light emitting surface (2e) of the light guide (2).
- Light is emitted as a linear light source.
- the linear light source according to the present invention can be used, for example, as a backlight light source for a liquid crystal display, and can be used in the same manner as the semiconductor light emitting device (1) described above.
- a light-emitting diode chip (3) emits light by coating a phosphor film on the inner peripheral surface (2c) of the light guide (2) or by mixing a phosphor inside the light guide (2). Can be emitted to the outside of the light guide (2) by changing the wavelength using a phosphor. In this case, white light can be emitted by using a blue LED chip or an ultraviolet LED chip for the light emitting diode chip (3).
- the visible light from the light emitting diode chip (3) is reflected by the half mirror layer (20), so that the light emitting diode chip (3) irradiates the light emitting surface (2e) of the light guide (2).
- the amount of visible light can be increased.
- the light from the light emitting diode which is a point light source, is reflected by the half mirror layer (20) in the light guide (2) to be converted into linear light that emits light with substantially uniform luminance and good color tone balance. Can be.
- the light reflectance is set to be low and the light transmittance is set high, so that the light reflected by the plurality of half mirror layers (20) is reduced.
- the visible light of the light emitting diode chip (3) can be emitted to the outside of the light guide (2) with uniform brightness by reducing the difference in light amount.
- a light-emitting diode is formed at the center of the light guide (2) by a total reflection mirror layer (21) provided in a pair at the center of the light guide (2) with respect to the pair of half mirror layers (20).
- the amount of visible light emitted from the chip (3) to the light emitting surface (2e) of the light guide (2) can be increased.
- the linear light source When used in combination with a cold cathode fluorescent tube, the linear light source (1) The light emitting component of the cold cathode fluorescent tube can be supplemented.
- a linear light source (1) having a pair of total reflection mirror layers (21) provided in a pair in a light guide (2) at an angle was prepared.
- the current flowing through the light emitting diode chip (3) was set to 10 O mA.
- the light source for the backlight of the liquid crystal screen was constructed by combining the linear light sources (1) that emit blue, green, and red light.
- the point light of the light emitting diode chip (3) incident from the two ends (2a) of the light guide (2) is guided by the half mirror layer (20) and the total reflection mirror layer (21).
- the light emitting surface (2e) of the body (2) was illuminated, and the light emitting surface (2e) emitted light with high luminance and substantially uniform luminance without unevenness.
- One surface of the light guide plate was surface-emitted by the linear light of the linear light source (1) with good color tone balance.
- the linear light source (1) that was produced had sufficient red and green components, and the NTSC specification was used in the same manner as the graph of the comparison between the semiconductor light emitting device (1) and the cold cathode fluorescent tube shown in Fig. 9. Achieved.
- linear light source (1) of the present invention can be favorably used alone or in combination with a cold cathode fluorescent tube as a backlight light source for a liquid crystal display.
- the semiconductor device and the linear light source according to the present invention can be favorably applied to a backlight light source of a liquid crystal display.
Abstract
Description
Claims
Priority Applications (2)
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JP2005502481A JPWO2004055427A1 (ja) | 2002-12-13 | 2003-11-28 | 半導体発光装置及びその製法並びに線状光源 |
US10/538,387 US20060113544A1 (en) | 2002-12-13 | 2003-11-28 | Semiconductor light-emitting device, method for manufacturing same, and linear light source |
Applications Claiming Priority (4)
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JP2002362663 | 2002-12-13 | ||
JP2002/362663 | 2002-12-13 | ||
JP2003009710 | 2003-01-17 | ||
JP2003/9710 | 2003-01-17 |
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WO2004055427A1 true WO2004055427A1 (ja) | 2004-07-01 |
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PCT/JP2003/015242 WO2004055427A1 (ja) | 2002-12-13 | 2003-11-28 | 半導体発光装置及びその製法並びに線状光源 |
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US (1) | US20060113544A1 (ja) |
JP (1) | JPWO2004055427A1 (ja) |
TW (1) | TWI235507B (ja) |
WO (1) | WO2004055427A1 (ja) |
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JP2008077888A (ja) * | 2006-09-19 | 2008-04-03 | Sharp Corp | 照明装置 |
JP2008546162A (ja) * | 2005-06-07 | 2008-12-18 | フュージョン ユーブイ システムズ, インコーポレイテッド | 硬化および表面改質のための固体光源 |
JP2011129388A (ja) * | 2009-12-18 | 2011-06-30 | Hitachi Appliances Inc | 電球形ledランプ |
WO2012001843A1 (ja) * | 2010-06-28 | 2012-01-05 | 株式会社エス・ケー・ジー | 照明装置 |
JP2012186036A (ja) * | 2011-03-07 | 2012-09-27 | Ushio Inc | 光源装置 |
JP2012237840A (ja) * | 2011-05-11 | 2012-12-06 | Sumitomo Electric Ind Ltd | 光モジュール |
JP2013048100A (ja) * | 2005-11-24 | 2013-03-07 | Lg Innotek Co Ltd | 照明装置 |
KR101304875B1 (ko) | 2012-01-20 | 2013-09-06 | 엘지이노텍 주식회사 | 조명 장치 |
JP2013187406A (ja) * | 2012-03-08 | 2013-09-19 | Stanley Electric Co Ltd | 発光装置及び車両用灯具 |
US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
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JP2009009116A (ja) * | 2007-06-01 | 2009-01-15 | Citizen Holdings Co Ltd | 液晶表示装置 |
WO2009150580A1 (en) * | 2008-06-13 | 2009-12-17 | Koninklijke Philips Electronics N.V. | Light emitting device |
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Also Published As
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US20060113544A1 (en) | 2006-06-01 |
JPWO2004055427A1 (ja) | 2006-04-20 |
TW200415805A (en) | 2004-08-16 |
TWI235507B (en) | 2005-07-01 |
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