WO2004051712A3 - Novel field effect transistor and method of fabrication - Google Patents

Novel field effect transistor and method of fabrication Download PDF

Info

Publication number
WO2004051712A3
WO2004051712A3 PCT/US2003/034667 US0334667W WO2004051712A3 WO 2004051712 A3 WO2004051712 A3 WO 2004051712A3 US 0334667 W US0334667 W US 0334667W WO 2004051712 A3 WO2004051712 A3 WO 2004051712A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor film
bandgap semiconductor
field effect
effect transistor
fabrication
Prior art date
Application number
PCT/US2003/034667
Other languages
French (fr)
Other versions
WO2004051712A2 (en
Inventor
Robert Chau
Douglas Barlage
Been-Yih Jin
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to AU2003286806A priority Critical patent/AU2003286806A1/en
Priority to EP03778020.2A priority patent/EP1565936B1/en
Priority to KR1020057009455A priority patent/KR100647173B1/en
Publication of WO2004051712A2 publication Critical patent/WO2004051712A2/en
Publication of WO2004051712A3 publication Critical patent/WO2004051712A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Abstract

The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the narrow bandgap semiconductor film.
PCT/US2003/034667 2002-11-27 2003-10-31 Novel field effect transistor and method of fabrication WO2004051712A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003286806A AU2003286806A1 (en) 2002-11-27 2003-10-31 Novel field effect transistor and method of fabrication
EP03778020.2A EP1565936B1 (en) 2002-11-27 2003-10-31 Novel field effect transistor and method of fabrication
KR1020057009455A KR100647173B1 (en) 2002-11-27 2003-10-31 Novel field effect transistor and method of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/306,640 US6825506B2 (en) 2002-11-27 2002-11-27 Field effect transistor and method of fabrication
US10/306,640 2002-11-27

Publications (2)

Publication Number Publication Date
WO2004051712A2 WO2004051712A2 (en) 2004-06-17
WO2004051712A3 true WO2004051712A3 (en) 2004-08-12

Family

ID=32325745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/034667 WO2004051712A2 (en) 2002-11-27 2003-10-31 Novel field effect transistor and method of fabrication

Country Status (7)

Country Link
US (4) US6825506B2 (en)
EP (1) EP1565936B1 (en)
KR (1) KR100647173B1 (en)
CN (1) CN1332437C (en)
AU (1) AU2003286806A1 (en)
TW (1) TWI234283B (en)
WO (1) WO2004051712A2 (en)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10326578B4 (en) * 2003-06-12 2006-01-19 Siltronic Ag Process for producing an SOI disk
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6909151B2 (en) 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7579280B2 (en) * 2004-06-01 2009-08-25 Intel Corporation Method of patterning a film
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US6979622B1 (en) * 2004-08-24 2005-12-27 Freescale Semiconductor, Inc. Semiconductor transistor having structural elements of differing materials and method of formation
US7195983B2 (en) * 2004-08-31 2007-03-27 Freescale Semiconductor, Inc. Programming, erasing, and reading structure for an NVM cell
US7422946B2 (en) 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US20060086977A1 (en) * 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US7217643B2 (en) * 2005-02-24 2007-05-15 Freescale Semiconductors, Inc. Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7528447B2 (en) * 2005-04-06 2009-05-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US20070066023A1 (en) * 2005-09-20 2007-03-22 Randhir Thakur Method to form a device on a soi substrate
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7479421B2 (en) 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US20070069302A1 (en) * 2005-09-28 2007-03-29 Been-Yih Jin Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
JP2007157982A (en) * 2005-12-05 2007-06-21 Seiko Epson Corp Transistor-type ferroelectric memory and method of manufacturing same
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
WO2007132884A1 (en) * 2006-05-17 2007-11-22 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
JP2008004649A (en) * 2006-06-21 2008-01-10 Matsushita Electric Ind Co Ltd Semiconductor device, and manufacturing method thereof
US20100155844A1 (en) * 2006-08-01 2010-06-24 Nec Corporation Semiconductor device and method for manufacturing the same
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
KR100770012B1 (en) * 2006-11-29 2007-10-25 한국전자통신연구원 Schottky barrier tunnel transistor and method for manufacturing the same
KR100770013B1 (en) * 2006-12-01 2007-10-25 한국전자통신연구원 Method for manufacturing schottky barrier tunnel transistor
KR100921020B1 (en) * 2006-12-05 2009-10-09 한국전자통신연구원 Schottky barrier tunnealing transistor and method for manufacturing the same
KR100864631B1 (en) * 2007-02-23 2008-10-22 주식회사 하이닉스반도체 Transistor of semiconductor device and method for fabricating the same
US8148718B2 (en) * 2007-05-31 2012-04-03 The Regents Of The University Of California Low voltage transistors
US7812370B2 (en) * 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
KR20090038242A (en) * 2007-10-15 2009-04-20 삼성전자주식회사 An image sensor including photoelectric transducing - charge trap layer
ES2489615T3 (en) * 2007-12-11 2014-09-02 Apoteknos Para La Piel, S.L. Use of a compound derived from p-hydroxyphenyl propionic acid for the treatment of psoriasis
KR101185563B1 (en) * 2007-12-24 2012-09-24 삼성전자주식회사 Method of fabricating Schottky barrier transistor
US8030163B2 (en) * 2007-12-26 2011-10-04 Intel Corporation Reducing external resistance of a multi-gate device using spacer processing techniques
US7763943B2 (en) * 2007-12-26 2010-07-27 Intel Corporation Reducing external resistance of a multi-gate device by incorporation of a partial metallic fin
US20090206404A1 (en) * 2008-02-15 2009-08-20 Ravi Pillarisetty Reducing external resistance of a multi-gate device by silicidation
US8278687B2 (en) * 2008-03-28 2012-10-02 Intel Corporation Semiconductor heterostructures to reduce short channel effects
US8129749B2 (en) * 2008-03-28 2012-03-06 Intel Corporation Double quantum well structures for transistors
US7750368B2 (en) 2008-06-13 2010-07-06 Macronix International Co., Ltd. Memory device
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US7884354B2 (en) * 2008-07-31 2011-02-08 Intel Corporation Germanium on insulator (GOI) semiconductor substrates
US7834345B2 (en) * 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
CN101740388B (en) * 2008-11-10 2011-05-11 中芯国际集成电路制造(上海)有限公司 Method for manufacturing metal-semiconductor field effect transistor
US8587075B2 (en) * 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
KR101634748B1 (en) 2009-12-08 2016-07-11 삼성전자주식회사 method for manufacturing MOS transistor and forming method of integrated circuit using the sime
US8440998B2 (en) 2009-12-21 2013-05-14 Intel Corporation Increasing carrier injection velocity for integrated circuit devices
US8633470B2 (en) * 2009-12-23 2014-01-21 Intel Corporation Techniques and configurations to impart strain to integrated circuit devices
CN102842493A (en) * 2011-06-20 2012-12-26 中国科学院微电子研究所 Semiconductor structure and manufacturing method thereof
CN102856186A (en) * 2011-06-27 2013-01-02 中国科学院微电子研究所 Semiconductor structure and manufacturing method thereof
KR101635028B1 (en) * 2011-12-20 2016-07-01 인텔 코포레이션 Strained channel region transistors employing source and drain stressors and systems including the same
US8450808B1 (en) * 2012-01-16 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS devices and methods for forming the same
US8890264B2 (en) 2012-09-26 2014-11-18 Intel Corporation Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
US9087905B2 (en) * 2012-10-03 2015-07-21 International Business Machines Corporation Transistor formation using cold welding
CN104465377B (en) * 2013-09-17 2018-10-16 中芯国际集成电路制造(上海)有限公司 Pmos transistor and forming method thereof
GB2520740A (en) * 2013-11-29 2015-06-03 St Microelectronics Res & Dev Low power die
CN105047719B (en) * 2015-08-11 2018-03-06 西安电子科技大学 Staggered hetero-junctions tunneling field-effect transistor based on InAsN GaAsSb materials
WO2019005106A1 (en) * 2017-06-30 2019-01-03 Intel Corporation Transistor with wide bandgap channel and narrow bandgap source/drain
CN110660864A (en) * 2018-06-29 2020-01-07 山东大学苏州研究院 High-frequency semiconductor thin film field effect transistor and preparation method thereof
CN112909116B (en) * 2021-01-18 2023-08-04 华中科技大学 Field effect transistor photoelectric detector based on dielectric layer response

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251666A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Thin-film transistor
EP0531550A1 (en) * 1991-03-28 1993-03-17 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5581092A (en) * 1993-09-07 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Gate insulated semiconductor device
US5683934A (en) * 1994-09-26 1997-11-04 Motorola, Inc. Enhanced mobility MOSFET device and method
US5986291A (en) * 1993-10-12 1999-11-16 La Corporation De L'ecole Polytechnique Field effect devices
EP1020898A2 (en) * 1999-01-14 2000-07-19 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal, fabrication method thereof, and semiconductor device
US6207977B1 (en) * 1995-06-16 2001-03-27 Interuniversitaire Microelektronica Vertical MISFET devices
EP1119029A2 (en) * 1991-07-12 2001-07-25 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
WO2001088995A1 (en) * 2000-05-19 2001-11-22 Qinetiq Limited Charge carrier extracting transistor

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33584E (en) * 1979-12-28 1991-05-07 Fujitsu Limited High electron mobility single heterojunction semiconductor devices
US5164797A (en) * 1988-06-17 1992-11-17 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
JP2822547B2 (en) * 1990-03-06 1998-11-11 富士通株式会社 High electron mobility transistor
US5272365A (en) * 1990-03-29 1993-12-21 Kabushiki Kaisha Toshiba Silicon transistor device with silicon-germanium electron gas hetero structure channel
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
US5245208A (en) * 1991-04-22 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5142349A (en) * 1991-07-01 1992-08-25 Motorola, Inc. Self-doped high performance complementary heterojunction field effect transistor
JPH0521762A (en) * 1991-07-10 1993-01-29 Mitsubishi Electric Corp Semiconductor device with fet and manufacture method
JPH06342811A (en) * 1993-06-01 1994-12-13 Nec Corp Field effect transistor and its manufacture
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
JP3361922B2 (en) * 1994-09-13 2003-01-07 株式会社東芝 Semiconductor device
JPH08153880A (en) * 1994-09-29 1996-06-11 Toshiba Corp Semiconductor device and fabrication thereof
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5770881A (en) * 1996-09-12 1998-06-23 International Business Machines Coproration SOI FET design to reduce transient bipolar current
US5940695A (en) * 1996-10-11 1999-08-17 Trw Inc. Gallium antimonide complementary HFET
US5798555A (en) * 1996-11-27 1998-08-25 The Regents Of The University Of California Enhancement-depletion logic based on Ge mosfets
US5798540A (en) * 1997-04-29 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with InAlAsSb/AlSb barrier
US5956584A (en) * 1998-03-30 1999-09-21 Texas Instruments - Acer Incorporated Method of making self-aligned silicide CMOS transistors
US6436776B2 (en) * 1999-03-16 2002-08-20 Kabushiki Kaisha Toshiba Process for fabricating a aligned LDD transistor
JP2001338988A (en) * 2000-05-25 2001-12-07 Hitachi Ltd Semiconductor device and its manufacturing method
US6326291B1 (en) * 2000-06-26 2001-12-04 Advanced Micro Devices, Inc. Fabrication of a wide metal silicide on a narrow polysilicon gate structure
KR100650467B1 (en) * 2001-03-12 2006-11-28 가부시키가이샤 히타치세이사쿠쇼 Semiconductor integrated circuit device and process for producing the same
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251666A (en) * 1984-05-28 1985-12-12 Seiko Epson Corp Thin-film transistor
EP0531550A1 (en) * 1991-03-28 1993-03-17 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
EP1119029A2 (en) * 1991-07-12 2001-07-25 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
US5581092A (en) * 1993-09-07 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Gate insulated semiconductor device
US5986291A (en) * 1993-10-12 1999-11-16 La Corporation De L'ecole Polytechnique Field effect devices
US5683934A (en) * 1994-09-26 1997-11-04 Motorola, Inc. Enhanced mobility MOSFET device and method
US6207977B1 (en) * 1995-06-16 2001-03-27 Interuniversitaire Microelektronica Vertical MISFET devices
EP1020898A2 (en) * 1999-01-14 2000-07-19 Matsushita Electric Industrial Co., Ltd. Semiconductor crystal, fabrication method thereof, and semiconductor device
WO2001088995A1 (en) * 2000-05-19 2001-11-22 Qinetiq Limited Charge carrier extracting transistor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHANG C-Y ET AL: "HIGH PERFORMANCE THIN-FILM TRANSISTORS WITH LOW-HIGH-LOW BAND GAP ENGINEERING", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3421, 9 July 1998 (1998-07-09), pages 152 - 158, XP001189049, ISSN: 0277-786X *
IKEDA K ET AL: "50-NM GATE SCHOTTKY SOURCE/DRAIN P-MOSFETS WITH A SIGE CHANNEL", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 23, no. 11, November 2002 (2002-11-01), pages 670 - 672, XP001158217, ISSN: 0741-3106 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 117 (E - 400) 2 May 1986 (1986-05-02) *

Also Published As

Publication number Publication date
US6825506B2 (en) 2004-11-30
AU2003286806A1 (en) 2004-06-23
WO2004051712A2 (en) 2004-06-17
US20040099966A1 (en) 2004-05-27
EP1565936B1 (en) 2013-09-18
CN1717798A (en) 2006-01-04
CN1332437C (en) 2007-08-15
TW200414543A (en) 2004-08-01
EP1565936A2 (en) 2005-08-24
KR20050075448A (en) 2005-07-20
US20040113210A1 (en) 2004-06-17
KR100647173B1 (en) 2006-11-24
TWI234283B (en) 2005-06-11
US7176075B2 (en) 2007-02-13
US7180109B2 (en) 2007-02-20
US20050017275A1 (en) 2005-01-27
US20050133866A1 (en) 2005-06-23
AU2003286806A8 (en) 2004-06-23

Similar Documents

Publication Publication Date Title
WO2004051712A3 (en) Novel field effect transistor and method of fabrication
TW200715562A (en) Thin film transistor substrate and fabrication thereof
WO2006025609A3 (en) Thin film transistor and its manufacturing method
TW200625646A (en) Field effect transistor and fabrication method thereof
TW200507020A (en) Multiple-gate transistors formed on bulk substrates
WO2006028775A3 (en) Dram transistor with a gate buried in the substrate and method of forming thereof
WO2003058723A1 (en) Organic thin-film transistor and manufacturing method thereof
WO2003103032A3 (en) A method for making a semiconductor device having a high-k gate dielectric
TW200419802A (en) Structure of multiple-gate transistor and method for manufacturing the same
TWI236154B (en) Semiconductor device and method for manufacturing the same
KR100327347B1 (en) Metal oxide semiconductor field effect transistor having reduced resistance between source and drain and fabricating method thereof
TW200638545A (en) MOS transistor including multi-work function metal nitride gate electrode, CMOS integrated circuit device including same, and related methods of manufacture
EP1662558A4 (en) Field effect transistor and method for manufacturing same
WO2004006303A3 (en) Method for fabricating an ultra shallow junction of a field effect transistor
TW200520070A (en) A method for making a semiconductor device having a metal gate electrode
WO2000030182A3 (en) Offset drain fermi-threshold field effect transistors
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
TW200505274A (en) Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
KR850005163A (en) Manufacturing Method of Field Effect Transistor
TW200711140A (en) Thin film transistor substrate and method for fabricating the same
TW200618299A (en) Fabrication method of thin film transistor
WO2004053999A3 (en) Vertical mos power transistor
KR970003837B1 (en) Fabrication of mosfet
TW200739914A (en) Thin film transistor and method of manufacturing the same
EP1403930A3 (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003778020

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020057009455

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 20038A42092

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020057009455

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003778020

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP