WO2004044992A1 - Double gate semiconductor device having separate gates - Google Patents
Double gate semiconductor device having separate gates Download PDFInfo
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- WO2004044992A1 WO2004044992A1 PCT/US2003/032662 US0332662W WO2004044992A1 WO 2004044992 A1 WO2004044992 A1 WO 2004044992A1 US 0332662 W US0332662 W US 0332662W WO 2004044992 A1 WO2004044992 A1 WO 2004044992A1
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- Prior art keywords
- gate
- fin
- semiconductor device
- insulating layer
- gate electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- -1 structures Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Definitions
- the present invention relates to semiconductor devices and methods of manufacturing semiconductor devices.
- the present invention has particular applicabiUty to double-gate devices. BACKGROUND ART
- MOSFETs planar metal oxide semiconductor field effect transistors
- problems. associated with short channel effects, such as excessive leakage between the source and drain become increasingly difficult to overcome.
- mobility degradation and a number of process issues also make it difficult to scale conventional MOSFETs to include increasingly smaller device features. New device structures are therefore being explored to improve FET performance and allow further device scaling.
- Double-gate MOSFETs represent new structures that have been considered as candidates for succeeding existing planar MOSFETs.
- the double-gate MOSFETs offer better characteristics than the conventional bulk silicon MOSFETs. These improvements arise because the double- gate MOSFET has a gate electrode on both sides of the channel, rather than only on one side as in conventional MOSFETs.
- the electric field generated by the drain is better screened from the source end of the channel.
- two gates can control roughly twice as much current as a single gate, resulting in a stronger switcl ing signal.
- a FinFET is a recent double-gate structure that exhibits good short channel behavior. Although conventional FinFETs are referred to as "double-gate" MOSFETs, the two gates typically are physically and electrically connected and thus form a single logically addressable gate.
- a FinFET includes a channel formed in a vertical fin. The FinFET structure may be fabricated using layout and process techniques similar to those used for conventional planar MOSFETs.
- Implementations consistent with the present invention provide a FinFET device with two gates that are effectively separated from each other by a conductive fin.
- the gates may be independently biased for increased circuit design flexibility.
- a semiconductor device including a substrate and an insulating layer formed on the substrate.
- a fin may be formed on the insulating layer and may include a number of side surfaces and a top surface.
- a first gate may be formed on the insulating layer proximate to one of number of side surfaces of the fin.
- a second gate may be formed on the insulating layer separate from the first gate and proximate to another one of number of side surfaces of the fin.
- a method of manufacturing a semiconductor device may include forming an insulating layer on a substrate and forming a fin structure on the insulating layer.
- the fin structure includes a first side surface, a second side surface, and a top surface.
- the method may also include forming source and drain regions at ends of the fin structure and depositing a gate material over the fin structure.
- the gate material surrounds the top surface and the first and second side surfaces.
- the gate material may be etched to form a first gate electrode and a second gate electrode on opposite sides of the fin.
- the deposited gate material may be planarized proximate to the fin.
- a semiconductor device may include a substrate and an insulating layer formed on the substrate.
- a conductive fin may be formed on the insulating layer, and gate dielectric layers may be formed on side surfaces of the conductive fin.
- a first gate electrode may be formed on the insulating layer. The first gate electrode may be disposed on a first side of the conductive fin adjacent to one of the gate dielectric layers.
- a second gate electrode may be formed on the insulating layer. The second gate electrode may be disposed on an opposite side of the conductive fin adjacent to another one of the gate dielectric layers and spaced apart from the first gate electrode.
- Fig. 1 is a cross-section illustrating exemplary layers that may be used for forming a fin in accordance with an embodiment of the present invention.
- Fig. 2A schematically illustrates the top view of a fin structure in accordance with an exemplary embodiment of the present invention.
- Fig. 2B is a cross-section illustrating the fin structure of Fig. 2A in accordance with an exemplary embodiment of the present invention.
- Fig. 3 is a cross-section illustrating the formation of a gate dielectric layer and gate material on the device of Fig. 2B in accordance with an exemplary embodiment of the present invention.
- Fig. 4 is a cross-section illustrating the planarizing of the gate material of Fig. 3 in accordance with an exemplary embodiment of the present invention.
- Fig. 5 schematically illustrates the top view of the semiconductor device of Fig. 4 in accordance with an exemplary embodiment of the present invention.
- Figs. 6A-6D are cross-sections illustrating the induction of tensile strain in a fin in accordance with another implementation of the present invention.
- Figs. 7A-7F are top and cross-sectional views illustrating formation of a fully silicided gate in a
- Implementations consistent with the present invention provide double gate FinFET devices and methods of manufacturing such devices.
- the gates in the FinFET devices formed in accordance with the present invention are effectively separated from each other and may be separately biased.
- Fig. 1 illustrates the cross-section of a semiconductor device 100 formed in accordance with an embodiment of the present invention.
- semiconductor device 100 may include a silicon on insulator (SOI) structure that includes a silicon substrate 110, a buried oxide layer 120 and a silicon layer 130 on the buried oxide layer 120. Buried oxide layer 120 and silicon layer 130 may be formed on substrate 110 in a conventional manner.
- SOI silicon on insulator
- buried oxide layer 120 may include a silicon oxide and may have a thickness ranging from about 1000 A to about 3000 A.
- Silicon layer 130 may include monocrystalline or polycrystalline silicon having a thickness ranging from about 300 A to about 1500 A. Silicon layer 130 is used to form a fin structure for a double gate transistor device, as described in more detail below.
- substrate 110 and layer 130 may include other semiconducting materials, such as germanium, or combinations of semiconducting materials, such as silicon-germanium. Buried oxide layer 120 may also include other dielectric materials.
- a dielectric layer 140 such as a silicon nitride layer or a silicon oxide layer (e.g., Si0 2 ), may be formed over silicon layer 130 to act as a protective cap during subsequent etching processes.
- dielectric layer 140 may be deposited at a thickness ranging from about 150 A to about 600 A.
- a photoresist material may be deposited and patterned to form a photoresist mask 150 for subsequent processing.
- the photoresist may be deposited and patterned in any conventional manner.
- Semiconductor device 100 may then be etched and the photoresist mask 150 may be removed.
- silicon layer 130 may be etched in a conventional manner, with the etching terminating on buried oxide layer 120 to form a fin.
- source and drain regions may be formed adjacent the respective ends of the fin.
- a layer of silicon, germanium or combination of silicon and germanium may be deposited, patterned and etched in a conventional manner to form source and drain regions.
- Fig. 2A schematically illustrates the top view of a fin structure on semiconductor 100 formed in such a manner.
- Source region 220 and drain region 230 may be formed adjacent the ends of fin 210 on buried oxide layer 120, according to an exemplary embodiment of the present invention.
- Fig. 2B is a cross-section along line A- A' in Fig. 2A illustrating the fin structure in accordance with an exemplary embodiment of the present invention.
- Dielectric layer 140 and silicon layer 130 have been etched to form fin 210.
- Fin 210 may include silicon 130 and a dielectric cap 140.
- Fig. 3 is a cross-section illustrating the formation of a gate dielectric layer and gate material on fin 210 in accordance with an exemplary embodiment of the present invention.
- a dielectric layer may be formed on fin 210.
- a thin oxide film 310 may be thermally grown on fin 210, as illustrated in Fig. 4.
- the oxide film 310 may be grown to a thickness of about 10 A to about 50 A and may be formed on the exposed side surfaces of silicon 130 in fin 210 to act as a dielectric layer for a subsequently formed gate electrode.
- the dielectric cap 140 may provide electrical insulation for the top surface of fin 210.
- a gate material layer 320 may be deposited over semiconductor device 100 after formation of the oxide film 310.
- the gate material layer 320 may comprise the material for the subsequently formed gate electrode.
- the gate material layer 320 may include polysilicon deposited using conventional chemical vapor deposition (CVD) to a thickness ranging from about 300 A to about 1500 A.
- CVD chemical vapor deposition
- other semiconducting materials such as germanium or combinations of silicon and germanium, or various metals may be used as the gate material.
- Gate material layer 320 may be selectively etched to form a gate structure out of the gate material layer 320 on device 100. Forming the gate structure in such a manner may leave some gate material 320 on top of the dielectric cap 140, for example as illustrated in Fig. 3.
- Fig. 4 is a cross-section illustrating the planarizing of the gate material 320 in accordance with an exemplary embodiment of the present invention. Excess gate material may be removed (e.g., from above the dielectric cap 140) to planarize the fin region of the semiconductor device 100.
- CMP chemical- mechanical polishing
- the gate material i.e., layer 320
- dielectric cap 140 in the vertical direction, as illustrated in Fig. 4.
- CMP chemical- mechanical polishing
- the gate material layer 320 in the channel region of semiconductor device 100 abuts fin 210 on the two side surfaces to form a first gate 410 and a second gate 420.
- the top surface of fin 210 is covered by dielectric cap 140.
- Fig. 5 illustrates a top view of semiconductor device 100 consistent with the present invention.
- first gate 410 and second gate 420 are shown adjacent, but not covering, fin 210.
- the gate material layer 320 may then be patterned and etched to form two gate electrodes. As illustrated in Fig. 5, semiconductor device 100 includes a double gate structure with gate electrodes 510 and 520. Gate electrodes 510 and 520 are effectively separated by fin 210 and may be separately biased, as discussed in more detail below.
- the gate dielectric 310 (Fig. 4) surrounding the side surfaces of fin 210 is not shown in Fig. 5 for simplicity.
- the source/drain regions 220 and 230 may then be doped.
- n-type or p-type impurities may be implanted in source/drain regions 220 and 230.
- the particular implantation dosages and energies may be selected based on the particular end device requirements.
- One or ordinary skill in this art would be able to optimize the source/drain implantation process based on the circuit requirements and such steps are not disclosed herein in order not to unduly obscure the thrust of the present invention.
- sidewall spacers (not shown) may optionally be formed prior to the source/drain ion implantation to control the location of the source/drain junctions based on the particular circuit requirements.
- Activation annealing may then be performed to activate the source/drain regions 220 and 230.
- gate electrode 510 and gate electrode 520 are physically and electrically separated from each other.
- each of the gate electrodes 510 and 520 may be separately biased with different voltages when used in a circuit.
- the capability for independently biasing the gates 410 and 420 (via gate electrodes 510 and 520) increases the flexibility of circuit design using semiconductor device 100.
- the resulting semiconductor device 100 illustrated in Fig. 5 is a double gate device with a first gate 410 and a second gate 420.
- the gate material layer 320 (Figs. 3 and 4) abuts two surfaces of fin 210 and provides semiconductor device 100 with increased channel width per device, as compared to a conventional double gate device.
- the fin 210 may also retain the dielectric cap 140 that protects the fin 210 during gate etching.
- the gates 410 and 420 are also effectively separated by fin 210 and may be separately biased (via respective gate electrodes 510 and 520) based on the particular circuit requirements of device 100.
- This separate double gate structure provides increased flexibility during circuit design, as opposed to conventional FinFETs which include a single gat connection.
- a double-gate FinFET device is formed with two separate gates in the channel region of the device.
- the resulting structure exhibits good short channel behavior.
- the present invention provides increased flexibility and can be easily integrated into conventional processing.
- FIG. 6A-6D are cross-sections illustrating the induction of tensile strain in a fin in accordance with another implementation of the present invention.
- Fig. 6A illustrates the cross-section of a semiconductor device 600.
- device 600 may include a buried oxide (BOX) layer 610, a fin 620, and an Si0 2 cap 630.
- Elements 610-630 may be formed as described above with respect to Figs. 1-2B.
- Fin 620 may include silicon, germanium or a combination of silicon and germanium.
- a thick sacrificial oxide layer 640 may be thermally grown on fin 620 as shown in Fig. 6B. Growing the thick (e.g., 200-400 A) sacrificial oxide layer 640 may induce a tensile strain in fin 620. The sacrificial oxide layer 640 may then be removed, and a thin gate oxide layer 650 may be grown, as illustrated in Fig. 6C. Gate material 660 may then be deposited over the fin 620 as shown in Fig. 6D.
- a FinFET may be formed from the structure in Fig. 6D in a typical manner. The fin 620 in such a FinFET will have a tensile strain, imparting qualities to the fin 620 that will be understood by those skilled in the art.
- a FinFET with a fully silicided gate may be desired.
- Such a FinFET may have an incorporated metal gate that removes a polysilicon depletion effect and helps to achieve a proper threshold voltage for the FinFET.
- Figs. 7A and 7B are views illustrating exemplary processing for forming a FinFET with a fully silicided gate.
- device 700 includes a fin 710, source region 720, and drain region 730. These layers/structures may be formed as described above with respect to Figs. 1-2B.
- fin 710 may include a top oxide cap 740 and gate oxide 750 surrounding a silicon structure.
- Fin 710 may be formed on a buried oxide (BOX) layer 705.
- BOX buried oxide
- a thin polysilicon layer 760 may be deposited on the fin 710, as shown in Fig. 7C. Then a thick bottom antireflective (BARC) layer 770 may be deposited, as shown in Fig. 7D.
- BARC bottom antireflective
- the gate region and contacts 780 may then be patterned and etched as shown from the top in Fig. 7E.
- Source and drain regions 720 and 730 may be implanted with ions without removing the BARC layer 770. Thus, the dopants used will be stopped by the BARC layer 770 from penetrating into the channel (e.g., fin 710).
- BARC layer 770 may be removed, and the polysilicon 760 is fully silicided to form a metal gate 780, as illustrated in Figs. 7E and 7F.
- the gate material 710 may also be planarized in a manner similar to that described above with respect to Fig. 4.
- the dielectric and conductive layers used in manufacturing a semiconductor device in accordance with the present invention can be deposited by conventional deposition techniques.
- metallization techniques such as various types of CVD processes, including low pressure CVD (LPCVD) and enhanced CVD (ECVD) can be employed.
- LPCVD low pressure CVD
- ECVD enhanced CVD
- the present invention is applicable in the manufacturing of double-gate semiconductor devices and particularly in FinFET devices with design features of 100 nm and below.
- the present invention is applicable to the formation of any of various types of semiconductor devices, and hence, details have not been set forth in order to avoid obscuring the thrust of the present invention.
- conventional photolithographic and etching techniques are employed and, hence, the details of such techniques have not been set forth herein in detail.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10393687T DE10393687B4 (en) | 2002-11-08 | 2003-10-14 | Double gate semiconductor device with separate gates and method for producing the dual gate semiconductor device |
AU2003291641A AU2003291641A1 (en) | 2002-11-08 | 2003-10-14 | Double gate semiconductor device having separate gates |
JP2004551527A JP2006505950A (en) | 2002-11-08 | 2003-10-14 | Double-gate semiconductor device having multiple separated gates |
GB0504833A GB2408849B (en) | 2002-11-08 | 2003-10-14 | Double gate semiconductor device having separate gates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/290,158 | 2002-11-08 | ||
US10/290,158 US6611029B1 (en) | 2002-11-08 | 2002-11-08 | Double gate semiconductor device having separate gates |
Publications (1)
Publication Number | Publication Date |
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WO2004044992A1 true WO2004044992A1 (en) | 2004-05-27 |
Family
ID=27757499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2003/032662 WO2004044992A1 (en) | 2002-11-08 | 2003-10-14 | Double gate semiconductor device having separate gates |
Country Status (9)
Country | Link |
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US (2) | US6611029B1 (en) |
JP (1) | JP2006505950A (en) |
KR (1) | KR101029383B1 (en) |
CN (1) | CN100459166C (en) |
AU (1) | AU2003291641A1 (en) |
DE (1) | DE10393687B4 (en) |
GB (1) | GB2408849B (en) |
TW (1) | TWI311371B (en) |
WO (1) | WO2004044992A1 (en) |
Cited By (1)
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WO2005001908A2 (en) * | 2003-06-23 | 2005-01-06 | Advanced Micro Devices, Inc. | Strained semiconductor device and method of manufacture |
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US6800910B2 (en) * | 2002-09-30 | 2004-10-05 | Advanced Micro Devices, Inc. | FinFET device incorporating strained silicon in the channel region |
US6611029B1 (en) * | 2002-11-08 | 2003-08-26 | Advanced Micro Devices, Inc. | Double gate semiconductor device having separate gates |
US6815268B1 (en) * | 2002-11-22 | 2004-11-09 | Advanced Micro Devices, Inc. | Method for forming a gate in a FinFET device |
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US7001837B2 (en) * | 2003-01-17 | 2006-02-21 | Advanced Micro Devices, Inc. | Semiconductor with tensile strained substrate and method of making the same |
US6803631B2 (en) * | 2003-01-23 | 2004-10-12 | Advanced Micro Devices, Inc. | Strained channel finfet |
US7148526B1 (en) | 2003-01-23 | 2006-12-12 | Advanced Micro Devices, Inc. | Germanium MOSFET devices and methods for making same |
US6855606B2 (en) * | 2003-02-20 | 2005-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-rod devices |
US7074656B2 (en) * | 2003-04-29 | 2006-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping of semiconductor fin devices |
US7029959B1 (en) * | 2003-05-06 | 2006-04-18 | Advanced Micro Devices, Inc. | Source and drain protection and stringer-free gate formation in semiconductor devices |
US6756643B1 (en) * | 2003-06-12 | 2004-06-29 | Advanced Micro Devices, Inc. | Dual silicon layer for chemical mechanical polishing planarization |
US7087506B2 (en) * | 2003-06-26 | 2006-08-08 | International Business Machines Corporation | Method of forming freestanding semiconductor layer |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6909151B2 (en) * | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7005330B2 (en) * | 2003-06-27 | 2006-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for forming the gate electrode in a multiple-gate transistor |
US7078742B2 (en) * | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
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US6611029B1 (en) | 2003-08-26 |
DE10393687T5 (en) | 2005-10-06 |
US20040126975A1 (en) | 2004-07-01 |
CN1711644A (en) | 2005-12-21 |
AU2003291641A1 (en) | 2004-06-03 |
JP2006505950A (en) | 2006-02-16 |
KR20050062656A (en) | 2005-06-23 |
GB0504833D0 (en) | 2005-04-13 |
KR101029383B1 (en) | 2011-04-15 |
DE10393687B4 (en) | 2012-12-06 |
TW200421595A (en) | 2004-10-16 |
GB2408849A (en) | 2005-06-08 |
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TWI311371B (en) | 2009-06-21 |
CN100459166C (en) | 2009-02-04 |
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