WO2004036660A1 - A surface mounting type light emitting diode - Google Patents

A surface mounting type light emitting diode Download PDF

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Publication number
WO2004036660A1
WO2004036660A1 PCT/KR2003/001781 KR0301781W WO2004036660A1 WO 2004036660 A1 WO2004036660 A1 WO 2004036660A1 KR 0301781 W KR0301781 W KR 0301781W WO 2004036660 A1 WO2004036660 A1 WO 2004036660A1
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WO
WIPO (PCT)
Prior art keywords
lead frame
light
epoxy
led
chip
Prior art date
Application number
PCT/KR2003/001781
Other languages
French (fr)
Inventor
Hyun-Woo Lee
Original Assignee
Tco Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tco Co., Ltd filed Critical Tco Co., Ltd
Priority to AU2003258842A priority Critical patent/AU2003258842A1/en
Priority to JP2004545019A priority patent/JP2006514426A/en
Publication of WO2004036660A1 publication Critical patent/WO2004036660A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates generally a surface mounting type LED, in detail die pad cup of lead frame with silver plating be die bonding by emitting cause InGaN, GaN LED chip and then it is able to improve light reflexibility and light brightness of the smallest package.
  • optical semiconductor device(LED) is parts for transmitting of light through light signal, it represents after light signal transmit light signal by LED, light emitting device(350nm ⁇ 990nm) using of front capacity and photosensitive device transmitting from light signal to electric signal(photo transistor, photo diode, triac, photo IC).
  • These optical semiconductor device make product of various wavelength from UV light to visual light, infra red light by material and type, density, structure of impurities forming PN junction.
  • Visual LED is a emitting device using injection Electro Luminescence of p-n junction, cause impressed voltage for emitting is very lower and lifetimetime is long it is used wildly as solid indication device and picture indication , etc.
  • the visual optical semiconductor device is using of all kinds of package as used part, representatively there are the smallest chip LED which is formed Surface Mounting Device applying to back light of cellular phone, the electric sign and the solid indication device, the 3 ⁇ , 5 ⁇ vertical lamp type of picture indication.
  • the following explanation substitutes the smallest Chip LED formed Surface Mounting Device as visual LED.
  • Fig.l Usual structure of surface mounting device LED is Fig.l illustration. It is formed chip(A) emitting after voltage impressed, electric conduct metal cathode and anode lead(C)(D) for impress on chip(A). The chip(A) stick to die pad(El) formed in cathode lead(C) by electric conduct sliver glue, at the same time chip(A) is bonding the end of cathode/anode lead(C)(D) and wire(A2)(Al), then connects between cathode and anode lead(C)(D) electrically.
  • the chip is molding by light transmitted molding material(F), a part of cathode and anode lead(C)(D) end exposed outside, the voltage is able to impress from outside to chip.
  • the molding material(F) is formed of transparency epoxy and made red, green, blue, orange as the kinds of LED chip(A).
  • This PCB board(J) has very lower thermostability. And as adhesive strength of PCB and epoxy is drop cause PCB borad(J) heat-transformed by heat stress LED device product process, it is difficult to assure the reliability. The process for the reliability assurance is very complex, so the making price is rising. Also because of using of thick PCB board, the smallest chip LED can't be slight. Also, in this way light reflection of PCB board is very lower and light reflection of Gold which plated in die pad is very lower.
  • the surface LED chip(InGaN, GaN LED chi ⁇ )(390nm ⁇ 470nm) has problem which light brightness dropping. Also because this PCB board import 100%, the price of material is high. The making price is high as using gold.
  • chip LED light device had within though solder reflow process, this solder reflow process progress in condition of 220C ⁇ 320C.
  • heat-transformation temperature of PCB board is lower than 220C, as solder reflow process give fatally heat-shock to usual SMD the smallest Chip LED device, the gold wire(Al)(A2) and silver epoxy(E2) get rid of PCB board.
  • SMD the smallest Chip LED device.
  • the present idea is to solute problem of such usual SMD the smallest Chip LED device, surface emitting LED chip(InGaN, GaN LED Chip)(390nm ⁇ 470nm) has within die pad cup of lead frame by an insulated light transmitted die glue(UV glue, an insulated transparency glue) and the use of silver epoxy glue exclude, therefore the short badness between the anode and the cathode solute completely.
  • the light emitting by the opposite of emitting surface among the light emitting of surface LED was transmitted by an insulated light transmission epoxy glue, this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup plated silver with reflection rate high and focused on emitting direction.
  • the purpose of the idea is that the lead frame with low thickness use as the board, the lead frame and the lower epoxy of light transparency epoxy is molding to be 10 ⁇ 50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration be made that the upper transmitted epoxy and the lower transmitted epoxy adhered each other. Hence the heat shock of light device decrease at the least and offer ultra slight chip LED.
  • the another purpose of the idea is that the hear stress of the set machinery solder reflower process used high temperature(220 ° C ⁇ 320 ° C) to be the smallest and then there are solved the usual technical problems that the wire made in gold by the fatal heat-shock and the silver epoxy in SMD the smallest LED device detached in PCB board.
  • the thermostable lead frame board board had heat transmission temperature is 450 ° C more, it guarantee the lifetime of optical semiconductor device and offer the smallest chip LED with the smallest heat shock.
  • the another purpose of the idea is that the usual PCB board(J) has high price and able to use with gold plating on the part of die pad, the production cost of these PCB board is high causing by 100% importation. As using the low price lead frame with silver plating, it offer the smallest chip LED device that the production cost reduce renovative.
  • the smallest, ultra slight and light chip LED optical semiconductor device was organized as multi line that one pair of frame part is the one of multitude. Every unit lead frame be dotting by an insulated light transmitted epoxy glue, above this glue, the light device chip(350nm ⁇ 470nm Chip) be die bonding on lead frame pad cup, the above light device chip be electronically jointing by gold wire to the part of frame of the above lead frame, the part of frame of lead frame be reaching safe in mold press and molding by transmitted epoxy, the ended series of lead frame stick to glue, this made through particular process cutting by diamond blade.
  • Figs 1 is view showing a structure of usual surface mounting type LED
  • Figs 2 is view showing a structure of surface mounting type LED according as the present idea.
  • Figs. 2 is view showing a four cross section of inside organization about the smallest and ultra slight and light LED.
  • the anode lead penetration(Bl) and the cathode lead penetration(B2) for jointing on the above light transmitted epoxy(F) cope with this lower epoxy(H).
  • the brief about the production process of chip LED optical semiconductor device is the following that the process which be arranging multiline with a pair of anode/cathode lead frame is one group, the process which be dotting every unit lead frame by insulated light transmitted epoxy glue, the process which die bonding light device chip(350nm ⁇ 470nm chip) to lead frame pad cup, the process which the above light device chip be electronically jointing by gold wire to the part of frame of the above lead frame, the process which the part of frame of lead frame be reaching safe in mold press and molding by transmitted epoxy, the ended series of lead frame stick to glue, this made through particular process cutting by diamond blade.
  • the present idea solves the short badness between anode and cathode because use of the silver epoxy glue excluded as surface emitting LED chip (A) (InGaN, GaN LED chip)(390nm ⁇ 470nm) had within die pad cup(El) of lead by an insulated light transmitted die glue(E)(UV Cure glue, an insulated transparency glue).
  • A InGaN, GaN LED chip
  • E UV Cure glue, an insulated transparency glue
  • the light emitting by the opposite of emitting surface among the light emitting of surface LED was transmitted by an insulated light transmission epoxy glue(E), this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup(El) plated silver with reflection rate high and focused on emitting direction.
  • the lead frame(I) with low thickness use as the board, the lead frame(I) and the lower epoxy(H) of light transparency epoxy is molding to be 10 ⁇ 50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration(B)(Bl) be made that the upper transmitted epoxy(F) and the lower transmitted epoxy(H) adhered each other.
  • the heat- shock of light device decrease at the least and offer ultra slight and light chip LED.
  • the idea is that by using the thermostable lead frame(I) board had heat transmission temperature is 450 ° C more, it guarantee the lifetime of optical semiconductor device and has the smallest heat shock. By using of the lead frame board made in lower price silver plating, the production cost can reduce.
  • surface emitting LED chip has within die pad cup of lead frame by an insulated light transmitted die glue and the use of silver epoxy glue exclude, therefore the short badness between the anode and the cathode solute completely.
  • the light emitting by the opposite of emitting surface among the light emitting of surface emitting LED was transmitted by an insulated light transmission epoxy glue, this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup plated silver with reflection rate high and focused on emitting direction, the lead frame with low thickness use as the board, the lead frame and the lower epoxy of light transparency epoxy is molding to be 10 ⁇ 50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration be made that the upper transmitted epoxy and the lower transmitted epoxy adhered each other.
  • the hear stress of the set machinery solder reflower process used high temperature(220 ° C ⁇ 320 ° C) to be the smallest and then there are solved the usual technical problems that the wire made in gold by the fatal heat-shock and the silver epoxy in SMD the smallest LED device detached in PCB board.
  • the thermostable lead frame board had heat transmission temperature is 450 °C more, it guarantee the lifetime of optical semiconductor device and offer the smallest and ultra slight and ultra light chip LED with the smallest heat-shock.

Abstract

The present invention is related to a surface mounting type of LED (Light Emitting Diode), whose purpose is, by mounting LED chip of InGaN, GaN type which is the emitting source of LED, on the die pad cup of lead frame which is plated with silver of high reflexibility of light, that the particle of light totally reflected from the chip is emitted toward front, and then the light brightness in package lens surface can be improved. The LED chip of InGaN, GaN type is die bonded and wire bonded, then molded by light transmitting epoxy resin so that the light transmitting epoxy resin in lower part of package can produce a projection of 10-50um approximately comparing the lower part of lead frame in the same plate, and then the upper part and lower part is fixed through penetration hole.

Description

A SURFACE MOUNTING TYPE LIGHT EMITTING DIODE
Technical Field
The present invention relates generally a surface mounting type LED, in detail die pad cup of lead frame with silver plating be die bonding by emitting cause InGaN, GaN LED chip and then it is able to improve light reflexibility and light brightness of the smallest package.
Background Art
In generally optical semiconductor device(LED) is parts for transmitting of light through light signal, it represents after light signal transmit light signal by LED, light emitting device(350nm~990nm) using of front capacity and photosensitive device transmitting from light signal to electric signal(photo transistor, photo diode, triac, photo IC). These optical semiconductor device make product of various wavelength from UV light to visual light, infra red light by material and type, density, structure of impurities forming PN junction.
Visual LED is a emitting device using injection Electro Luminescence of p-n junction, cause impressed voltage for emitting is very lower and lifetimetime is long it is used wildly as solid indication device and picture indication , etc.
The visual optical semiconductor device is using of all kinds of package as used part, representatively there are the smallest chip LED which is formed Surface Mounting Device applying to back light of cellular phone, the electric sign and the solid indication device, the 3Φ, 5Φ vertical lamp type of picture indication. The following explanation substitutes the smallest Chip LED formed Surface Mounting Device as visual LED.
Usual structure of surface mounting device LED is Fig.l illustration. It is formed chip(A) emitting after voltage impressed, electric conduct metal cathode and anode lead(C)(D) for impress on chip(A). The chip(A) stick to die pad(El) formed in cathode lead(C) by electric conduct sliver glue, at the same time chip(A) is bonding the end of cathode/anode lead(C)(D) and wire(A2)(Al), then connects between cathode and anode lead(C)(D) electrically.
Also, for prevent the above chip(A) outside, the chip is molding by light transmitted molding material(F), a part of cathode and anode lead(C)(D) end exposed outside, the voltage is able to impress from outside to chip.
If cathode and anode lead(C)(D) of LED exposed outside connect to using circuit electrically, as the source of electricity impress to chip(A) though cathode and anode(C)(D), optical semiconductor device chip(A) is emitting so follow. The molding material(F) is formed of transparency epoxy and made red, green, blue, orange as the kinds of LED chip(A).
The device structure of the smallest LED chip with usual represent surface mounting device use thick PCB board(J). This PCB board(J) has very lower thermostability. And as adhesive strength of PCB and epoxy is drop cause PCB borad(J) heat-transformed by heat stress LED device product process, it is difficult to assure the reliability. The process for the reliability assurance is very complex, so the making price is rising. Also because of using of thick PCB board, the smallest chip LED can't be slight. Also, in this way light reflection of PCB board is very lower and light reflection of Gold which plated in die pad is very lower. The surface LED chip(InGaN, GaN LED chiρ)(390nm~470nm) has problem which light brightness dropping. Also because this PCB board import 100%, the price of material is high. The making price is high as using gold.
In the application part of cellular phone, chip LED light device had within though solder reflow process, this solder reflow process progress in condition of 220C~320C. However heat-transformation temperature of PCB board is lower than 220C, as solder reflow process give fatally heat-shock to usual SMD the smallest Chip LED device, the gold wire(Al)(A2) and silver epoxy(E2) get rid of PCB board. Hereby it's difficulty to guarantee the length of lifetime usual SMD the smallest Chip LED device.
Disclosure of the Invention
The present idea is to solute problem of such usual SMD the smallest Chip LED device, surface emitting LED chip(InGaN, GaN LED Chip)(390nm~470nm) has within die pad cup of lead frame by an insulated light transmitted die glue(UV glue, an insulated transparency glue) and the use of silver epoxy glue exclude, therefore the short badness between the anode and the cathode solute completely. The light emitting by the opposite of emitting surface among the light emitting of surface LED was transmitted by an insulated light transmission epoxy glue, this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup plated silver with reflection rate high and focused on emitting direction.
The purpose of the idea is that the lead frame with low thickness use as the board, the lead frame and the lower epoxy of light transparency epoxy is molding to be 10~50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration be made that the upper transmitted epoxy and the lower transmitted epoxy adhered each other. Hence the heat shock of light device decrease at the least and offer ultra slight chip LED. The another purpose of the idea is that the hear stress of the set machinery solder reflower process used high temperature(220°C~320°C) to be the smallest and then there are solved the usual technical problems that the wire made in gold by the fatal heat-shock and the silver epoxy in SMD the smallest LED device detached in PCB board. Hereby thought it difficult to guarantee the lifetime of usual SMD the smallest chip LED device, by using the thermostable lead frame board had heat transmission temperature is 450 °C more, it guarantee the lifetime of optical semiconductor device and offer the smallest chip LED with the smallest heat shock.
The another purpose of the idea is that the usual PCB board(J) has high price and able to use with gold plating on the part of die pad, the production cost of these PCB board is high causing by 100% importation. As using the low price lead frame with silver plating, it offer the smallest chip LED device that the production cost reduce renovative.
The smallest, ultra slight and light chip LED optical semiconductor device according as the present for this such a purpose was organized as multi line that one pair of frame part is the one of multitude. Every unit lead frame be dotting by an insulated light transmitted epoxy glue, above this glue, the light device chip(350nm~470nm Chip) be die bonding on lead frame pad cup, the above light device chip be electronically jointing by gold wire to the part of frame of the above lead frame, the part of frame of lead frame be reaching safe in mold press and molding by transmitted epoxy, the ended series of lead frame stick to glue, this made through particular process cutting by diamond blade.
Brief Description of the Drawings
Figs 1 is view showing a structure of usual surface mounting type LED, Figs 2 is view showing a structure of surface mounting type LED according as the present idea.
Best Mode for Carrying Out the Invention
There are explanation of the smallest and ultra slight and light chip LED optical semiconductor device according as the present idea refer to following appending draft.
Figs. 2 is view showing a four cross section of inside organization about the smallest and ultra slight and light LED. Like the illustration, organization of the smallest and ultra slight and light chip LED optical semiconductor device according as the present idea is formed that the lead frame(I) wiht a pair of anode lead frame(D) and cathode lead frame(C), the electric current wire(Al)(A2) for applying an electric current between anode/cathode lead frame(D)(C) and LED chip(A), the transmitted epoxy(F) molding the above two lead frame(D)(C), the lower epoxy(H) for 10~50um projection formed lower of lead frame(C)(D), and the anode lead penetration(Bl) and the cathode lead penetration(B2) for jointing on the above light transmitted epoxy(F) cope with this lower epoxy(H). The brief about the production process of chip LED optical semiconductor device is the following that the process which be arranging multiline with a pair of anode/cathode lead frame is one group, the process which be dotting every unit lead frame by insulated light transmitted epoxy glue, the process which die bonding light device chip(350nm~470nm chip) to lead frame pad cup, the process which the above light device chip be electronically jointing by gold wire to the part of frame of the above lead frame, the process which the part of frame of lead frame be reaching safe in mold press and molding by transmitted epoxy, the ended series of lead frame stick to glue, this made through particular process cutting by diamond blade. The present idea solves the short badness between anode and cathode because use of the silver epoxy glue excluded as surface emitting LED chip (A) (InGaN, GaN LED chip)(390nm~470nm) had within die pad cup(El) of lead by an insulated light transmitted die glue(E)(UV Cure glue, an insulated transparency glue). The light emitting by the opposite of emitting surface among the light emitting of surface LED was transmitted by an insulated light transmission epoxy glue(E), this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup(El) plated silver with reflection rate high and focused on emitting direction.
Also the idea is that the lead frame(I) with low thickness use as the board, the lead frame(I) and the lower epoxy(H) of light transparency epoxy is molding to be 10~50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration(B)(Bl) be made that the upper transmitted epoxy(F) and the lower transmitted epoxy(H) adhered each other. Hence the heat- shock of light device decrease at the least and offer ultra slight and light chip LED. The idea is that by using the thermostable lead frame(I) board had heat transmission temperature is 450 °C more, it guarantee the lifetime of optical semiconductor device and has the smallest heat shock. By using of the lead frame board made in lower price silver plating, the production cost can reduce.
Industrial Applicability
Like such above explanation, the idea is that surface emitting LED chip has within die pad cup of lead frame by an insulated light transmitted die glue and the use of silver epoxy glue exclude, therefore the short badness between the anode and the cathode solute completely. The light emitting by the opposite of emitting surface among the light emitting of surface emitting LED was transmitted by an insulated light transmission epoxy glue, this transmitted light offer chip LED to improve the brightness as that the light reflected from die pad cup plated silver with reflection rate high and focused on emitting direction, the lead frame with low thickness use as the board, the lead frame and the lower epoxy of light transparency epoxy is molding to be 10~50um projection than same surface of lead part of lead frame using the light transparency epoxy, by the penetration be made that the upper transmitted epoxy and the lower transmitted epoxy adhered each other. Hence the heat-shock of light device decrease at the least and form ultra slight chip LED, the hear stress of the set machinery solder reflower process used high temperature(220°C~320°C) to be the smallest and then there are solved the usual technical problems that the wire made in gold by the fatal heat-shock and the silver epoxy in SMD the smallest LED device detached in PCB board. Hereby thought it difficult to guarantee the lifetime of usual SMD the smallest chip LED device, by using the thermostable lead frame board had heat transmission temperature is 450 °C more, it guarantee the lifetime of optical semiconductor device and offer the smallest and ultra slight and ultra light chip LED with the smallest heat-shock.

Claims

Claims
1. The lead frame(I) with Anode lead frame(D) and Cathode lead frame(C); An insulated light transmitted epoxy glue(E) doting die pad cup(El) of the above lead frame(I); LED chip(A) die bonding on the above light transmitted epoxy glue(E);
The current conducting wire(Al)(A2) for applying an current conducting between anode/cathode lead frame(D)(C);
The light transmitted epoxy(F) molding the upper of the above two lead frame(DχC); The lower epoxy(H) forming the lower of the above lead frame(I);
A surface mounting type light emitting diode include this such special feature.
2. On Claim l,
A surface mounting type light emitting diode having that the lower epoxy (H) of the lead frame(I) lower is molding to be 10-5 Own projection than same surface of lead part of lead frame using the light transparency epoxy, through the anode/cathode penetration(B)(Bl) is adhering to light transmitted epoxy(F) of the above lead frame(I).
PCT/KR2003/001781 2002-09-02 2003-09-01 A surface mounting type light emitting diode WO2004036660A1 (en)

Priority Applications (2)

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AU2003258842A AU2003258842A1 (en) 2002-09-02 2003-09-01 A surface mounting type light emitting diode
JP2004545019A JP2006514426A (en) 2002-09-02 2003-09-01 Surface mount type light emitting diode

Applications Claiming Priority (2)

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KR20-2002-0026208 2002-09-02
KR20020026208U KR200299491Y1 (en) 2002-09-02 2002-09-02 A Surface mounting type light emitting diode

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US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US10892383B2 (en) 2007-10-31 2021-01-12 Cree, Inc. Light emitting diode package and method for fabricating same
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
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WO2010102685A1 (en) * 2009-03-10 2010-09-16 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US20150144969A1 (en) * 2013-11-27 2015-05-28 Lg Display Co., Ltd. Light emitting diode package, light source module and backlight unit including the same
US9236534B2 (en) * 2013-11-27 2016-01-12 Lg Display Co., Ltd. Light emitting diode package, light source module and backlight unit including the same
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
WO2022118288A1 (en) * 2020-12-04 2022-06-09 Molex, Llc High-power electronics devices and methods for manufacturing same

Also Published As

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JP2006514426A (en) 2006-04-27
CN100379036C (en) 2008-04-02
KR200299491Y1 (en) 2003-01-03
CN1679179A (en) 2005-10-05

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