WO2004036631A3 - Silicon-containing layer deposition with silicon compounds - Google Patents

Silicon-containing layer deposition with silicon compounds Download PDF

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Publication number
WO2004036631A3
WO2004036631A3 PCT/US2003/033263 US0333263W WO2004036631A3 WO 2004036631 A3 WO2004036631 A3 WO 2004036631A3 US 0333263 W US0333263 W US 0333263W WO 2004036631 A3 WO2004036631 A3 WO 2004036631A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
halogen
compounds
atoms
germanium
Prior art date
Application number
PCT/US2003/033263
Other languages
French (fr)
Other versions
WO2004036631A2 (en
Inventor
Kaushal K Singh
Paul B Comita
Lance A Scudder
David K Carlson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to AU2003301382A priority Critical patent/AU2003301382A1/en
Priority to JP2004545570A priority patent/JP2006515955A/en
Priority to EP03809181.5A priority patent/EP1563529B1/en
Priority to KR1020057006706A priority patent/KR101144366B1/en
Publication of WO2004036631A2 publication Critical patent/WO2004036631A2/en
Publication of WO2004036631A3 publication Critical patent/WO2004036631A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0896—Compounds with a Si-H linkage
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Abstract

Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.
PCT/US2003/033263 2002-10-18 2003-10-20 Silicon-containing layer deposition with silicon compounds WO2004036631A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003301382A AU2003301382A1 (en) 2002-10-18 2003-10-20 Silicon-containing layer deposition with silicon compounds
JP2004545570A JP2006515955A (en) 2002-10-18 2003-10-20 Deposition of silicon-containing layers with silicon compounds
EP03809181.5A EP1563529B1 (en) 2002-10-18 2003-10-20 Silicon-containing layer deposition with silicon compounds
KR1020057006706A KR101144366B1 (en) 2002-10-18 2003-10-20 Silicon-containing layer deposition with silicon compounds

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US41942602P 2002-10-18 2002-10-18
US41950402P 2002-10-18 2002-10-18
US41937602P 2002-10-18 2002-10-18
US60/419,376 2002-10-18
US60/419,504 2002-10-18
US60/419,426 2002-10-18
US10/688,797 2003-10-17
US10/688,797 US7540920B2 (en) 2002-10-18 2003-10-17 Silicon-containing layer deposition with silicon compounds

Publications (2)

Publication Number Publication Date
WO2004036631A2 WO2004036631A2 (en) 2004-04-29
WO2004036631A3 true WO2004036631A3 (en) 2004-06-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/033263 WO2004036631A2 (en) 2002-10-18 2003-10-20 Silicon-containing layer deposition with silicon compounds

Country Status (6)

Country Link
US (3) US7540920B2 (en)
EP (1) EP1563529B1 (en)
JP (3) JP2006515955A (en)
KR (1) KR101144366B1 (en)
AU (1) AU2003301382A1 (en)
WO (1) WO2004036631A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7326357B2 (en) 2018-06-29 2023-08-15 エボニック オペレーションズ ゲーエムベーハー Partially hydrogenated chlorosilanes and method for their production by selective hydrogenation

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