WO2003088334A3 - Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications - Google Patents
Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications Download PDFInfo
- Publication number
- WO2003088334A3 WO2003088334A3 PCT/US2003/010928 US0310928W WO03088334A3 WO 2003088334 A3 WO2003088334 A3 WO 2003088334A3 US 0310928 W US0310928 W US 0310928W WO 03088334 A3 WO03088334 A3 WO 03088334A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- applications
- amlcd
- deposition
- liquid crystal
- crystal display
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 3
- 238000002161 passivation Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 title 1
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 238000005137 deposition process Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Abstract
A method of gate metal layer deposition and a method of passivation layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. In another aspect, the cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor,
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/118,864 | 2002-04-09 | ||
US10/118,864 US6869838B2 (en) | 2002-04-09 | 2002-04-09 | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications |
US10/119,631 US20030194825A1 (en) | 2002-04-10 | 2002-04-10 | Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications |
US10/119,631 | 2002-04-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003088334A2 WO2003088334A2 (en) | 2003-10-23 |
WO2003088334A3 true WO2003088334A3 (en) | 2004-04-01 |
Family
ID=29253948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/010928 WO2003088334A2 (en) | 2002-04-09 | 2003-04-09 | Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2003088334A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006014591A2 (en) * | 2004-07-08 | 2006-02-09 | Itn Energy Systems, Inc. | Permeation barriers for flexible electronics |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
-
2003
- 2003-04-09 WO PCT/US2003/010928 patent/WO2003088334A2/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
Also Published As
Publication number | Publication date |
---|---|
WO2003088334A2 (en) | 2003-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003088327A3 (en) | Deposition of silicon layers for active matrix liquid crystal displays | |
WO2018196087A1 (en) | Array substrate, display apparatus and manufacturing method therefor | |
JP4700160B2 (en) | Semiconductor device | |
US20190204668A1 (en) | Array substrate, manufacturing method, display panel and display device | |
US7332383B2 (en) | Switching device for a pixel electrode and methods for fabricating the same | |
TW200701469A (en) | Method for manufacturing thin film transistors | |
TW200625650A (en) | Method of manufacturing a flexible thin film transistor array panel including plastic substrate | |
US8383467B2 (en) | Thin film transistor and method of manufacturing the same | |
CN104600083B (en) | Thin-film transistor array base-plate and preparation method thereof, display panel and display device | |
EP1596428A4 (en) | Organic thin-film transistor device and method for manufacturing same | |
TW200611001A (en) | Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same | |
TW200501426A (en) | Method of fabricating bottom-gated polycrystalline silicon thin film transistor | |
TW200707756A (en) | Semiconductor device with thin-film transistors and method of fabricating the same | |
US20230274997A1 (en) | Nitrogen-rich silicon nitride films for thin film transistors | |
TW200642088A (en) | Thin film transistor, thin film transistor panel, and method of manufacturing the same | |
US5696387A (en) | Thin film transistor in a liquid crystal display having a microcrystalline and amorphous active layers with an intrinsic semiconductor layer attached to same | |
US20180068855A1 (en) | Method of Manufacturing Thin Film Transistor | |
TW200628876A (en) | Liquid crystal display | |
US20060111244A1 (en) | Methods for fabricating thin film transistors | |
WO2003088334A3 (en) | Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications | |
TW200630726A (en) | Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display | |
TW200510851A (en) | Array substrate, liquid crystal display, and method of manufacturing array substrate | |
TW200742090A (en) | Thin film transistor, its fabrication process, active matrix display, and its fabrication process | |
WO2021179271A1 (en) | Display substrate and manufacturing method therefor, and display panel | |
JP5876947B2 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |