WO2003077283A3 - Drift-dominated detector - Google Patents

Drift-dominated detector Download PDF

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Publication number
WO2003077283A3
WO2003077283A3 PCT/US2003/006506 US0306506W WO03077283A3 WO 2003077283 A3 WO2003077283 A3 WO 2003077283A3 US 0306506 W US0306506 W US 0306506W WO 03077283 A3 WO03077283 A3 WO 03077283A3
Authority
WO
WIPO (PCT)
Prior art keywords
thickness
dominated
drift
detector
substrate
Prior art date
Application number
PCT/US2003/006506
Other languages
French (fr)
Other versions
WO2003077283A2 (en
Inventor
Yanning Sun
Jerry M Woodall
Eric S Harmon
David B Salzman
Original Assignee
Univ Yale
Yanning Sun
Jerry M Woodall
Eric S Harmon
David B Salzman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yale, Yanning Sun, Jerry M Woodall, Eric S Harmon, David B Salzman filed Critical Univ Yale
Priority to AU2003225650A priority Critical patent/AU2003225650A1/en
Publication of WO2003077283A2 publication Critical patent/WO2003077283A2/en
Publication of WO2003077283A3 publication Critical patent/WO2003077283A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type

Abstract

A conventional pin photodetector structure consisting of an n-type semiconductor substrate(101) of thickness (121). On top of the substrate, a n-type semiconductor buffer layer (102) of thickness (122), followed by an intrinsic semiconductor layer (103) of thickness (123), and p-type semiconductor layer (105) of thickness (125), are all grown epitaxially on the substrate (101).
PCT/US2003/006506 2002-03-04 2003-03-04 Drift-dominated detector WO2003077283A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003225650A AU2003225650A1 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36182302P 2002-03-04 2002-03-04
US60/361,823 2002-03-04

Publications (2)

Publication Number Publication Date
WO2003077283A2 WO2003077283A2 (en) 2003-09-18
WO2003077283A3 true WO2003077283A3 (en) 2003-12-24

Family

ID=27805082

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2003/006660 WO2003077284A2 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region
PCT/US2003/006506 WO2003077283A2 (en) 2002-03-04 2003-03-04 Drift-dominated detector

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2003/006660 WO2003077284A2 (en) 2002-03-04 2003-03-04 Heterojunction bipolar transistor having thinned base-collector depletion region

Country Status (2)

Country Link
AU (2) AU2003225650A1 (en)
WO (2) WO2003077284A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2335290A2 (en) * 2008-09-02 2011-06-22 Golan, Gady Photoelectric structure and method of manufacturing thereof
CN102064187B (en) * 2009-11-11 2013-02-13 中国科学院半导体研究所 Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof
CN105261639B (en) * 2014-07-18 2019-02-26 稳懋半导体股份有限公司 Heteroj unction bipolar transistor
CN107104172B (en) * 2017-06-17 2019-09-20 东莞市天域半导体科技有限公司 A kind of preparation method of SiC avalanche photodide device epitaxial material
CN110797429B (en) * 2019-11-08 2021-02-02 中国科学院长春光学精密机械与物理研究所 Stress-controlled gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
CN113161415A (en) * 2020-01-22 2021-07-23 全新光电科技股份有限公司 Heterojunction bipolar transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159816A (en) * 1994-08-09 2000-12-12 Triquint Semiconductor Texas, Inc. Method of fabricating a bipolar transistor
US6482711B1 (en) * 1999-10-28 2002-11-19 Hrl Laboratories, Llc InPSb/InAs BJT device and method of making
JP2002016076A (en) * 2000-06-27 2002-01-18 Nec Corp Heterojunction bipolar transistor and its manufacturing method
AU2002219895A1 (en) * 2000-11-27 2002-06-03 Kopin Corporation Bipolar transistor with lattice matched base layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6448582B1 (en) * 2000-09-21 2002-09-10 Yale University High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region

Also Published As

Publication number Publication date
WO2003077283A2 (en) 2003-09-18
WO2003077284A3 (en) 2003-12-04
AU2003225650A8 (en) 2003-09-22
AU2003225650A1 (en) 2003-09-22
AU2003230597A8 (en) 2003-09-22
AU2003230597A1 (en) 2003-09-22
WO2003077284A2 (en) 2003-09-18

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