WO2003056057A3 - Method for coating a substrate and coated substrates obtained according to said method - Google Patents

Method for coating a substrate and coated substrates obtained according to said method Download PDF

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Publication number
WO2003056057A3
WO2003056057A3 PCT/DE2002/004564 DE0204564W WO03056057A3 WO 2003056057 A3 WO2003056057 A3 WO 2003056057A3 DE 0204564 W DE0204564 W DE 0204564W WO 03056057 A3 WO03056057 A3 WO 03056057A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
coating
component
layer
regard
Prior art date
Application number
PCT/DE2002/004564
Other languages
German (de)
French (fr)
Other versions
WO2003056057A2 (en
Inventor
Arno Wehner
Yanka Jeliazova
Rene Franchy
Original Assignee
Forschungszentrum Juelich Gmbh
Arno Wehner
Yanka Jeliazova
Rene Franchy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Arno Wehner, Yanka Jeliazova, Rene Franchy filed Critical Forschungszentrum Juelich Gmbh
Publication of WO2003056057A2 publication Critical patent/WO2003056057A2/en
Publication of WO2003056057A3 publication Critical patent/WO2003056057A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Abstract

The invention relates to a method for coating a substrate A with a layer of a substance BC. The substrate A to be coated is provided, the two components B and C are provided in a gaseous or vaporous form and in coexistence with each other in the phase present above the substrate A, B being an oxidizing substance and C being an oxidant and the two together forming the oxidized layer. Component C with regard to the concentration of component B is present in at least a stoichiometric ratio with regard to the product. Component B has a more negative oxidation potential than substrate A with regard to component C. The invention provides a method for coating for example nickel with an Al2O3 layer which is characterized in that no unwanted intermediate layer is formed between nickel and Al2O3 later on.
PCT/DE2002/004564 2001-12-21 2002-12-13 Method for coating a substrate and coated substrates obtained according to said method WO2003056057A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001163551 DE10163551A1 (en) 2001-12-21 2001-12-21 Process for coating a substrate A with a layer of components BC and substrates coated by the process
DE10163551.6 2001-12-21

Publications (2)

Publication Number Publication Date
WO2003056057A2 WO2003056057A2 (en) 2003-07-10
WO2003056057A3 true WO2003056057A3 (en) 2003-10-09

Family

ID=7710568

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/004564 WO2003056057A2 (en) 2001-12-21 2002-12-13 Method for coating a substrate and coated substrates obtained according to said method

Country Status (2)

Country Link
DE (1) DE10163551A1 (en)
WO (1) WO2003056057A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923056A (en) * 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
EP0937786A2 (en) * 1998-02-21 1999-08-25 DLR Deutsches Zentrum für Luft- und Raumfahrt e.V. Thermal barrier coating system having an integrated alumina layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923056A (en) * 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
EP0937786A2 (en) * 1998-02-21 1999-08-25 DLR Deutsches Zentrum für Luft- und Raumfahrt e.V. Thermal barrier coating system having an integrated alumina layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KAZUAKI SAWADA ET AL: "METALORGANIC MOLECULAR BEAM EPITAXY OF Y-AL2O3 FILMS ON SI AT LOW GROWTH TEMPERATURES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 52, no. 20, 16 May 1988 (1988-05-16), pages 1672 - 1674, XP000020337, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
DE10163551A1 (en) 2003-07-10
WO2003056057A2 (en) 2003-07-10

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