WO2003052802A3 - Dual robot processing system - Google Patents

Dual robot processing system Download PDF

Info

Publication number
WO2003052802A3
WO2003052802A3 PCT/US2002/041721 US0241721W WO03052802A3 WO 2003052802 A3 WO2003052802 A3 WO 2003052802A3 US 0241721 W US0241721 W US 0241721W WO 03052802 A3 WO03052802 A3 WO 03052802A3
Authority
WO
WIPO (PCT)
Prior art keywords
transfer
passage
transfer area
processing system
robot
Prior art date
Application number
PCT/US2002/041721
Other languages
French (fr)
Other versions
WO2003052802A2 (en
Inventor
Lawrence C Lei
Moris Kori
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003052802A2 publication Critical patent/WO2003052802A2/en
Publication of WO2003052802A3 publication Critical patent/WO2003052802A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Abstract

A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.
PCT/US2002/041721 2001-12-14 2002-12-13 Dual robot processing system WO2003052802A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/017,039 US6729824B2 (en) 2001-12-14 2001-12-14 Dual robot processing system
US10/017,039 2001-12-14

Publications (2)

Publication Number Publication Date
WO2003052802A2 WO2003052802A2 (en) 2003-06-26
WO2003052802A3 true WO2003052802A3 (en) 2003-12-11

Family

ID=21780370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/041721 WO2003052802A2 (en) 2001-12-14 2002-12-13 Dual robot processing system

Country Status (3)

Country Link
US (1) US6729824B2 (en)
TW (1) TW200301212A (en)
WO (1) WO2003052802A2 (en)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936198A (en) * 1995-07-19 1997-02-07 Hitachi Ltd Vacuum processor and semiconductor production line using the processor
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
TW442891B (en) * 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
KR100407568B1 (en) * 2001-06-01 2003-12-01 삼성전자주식회사 Apparatus for processing semiconductor having foup index inside apparatus establishing area
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
JP2005504885A (en) * 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド Barrier formation using a novel sputter deposition method
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
WO2003065424A2 (en) 2002-01-25 2003-08-07 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6852644B2 (en) * 2002-11-25 2005-02-08 The Boc Group, Inc. Atmospheric robot handling equipment
WO2004064147A2 (en) * 2003-01-07 2004-07-29 Applied Materials, Inc. Integration of ald/cvd barriers with porous low k materials
JP2004282002A (en) * 2003-02-27 2004-10-07 Tokyo Electron Ltd Substrate treating apparatus and substrate treating method
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US10086511B2 (en) 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
US7422406B2 (en) * 2003-11-10 2008-09-09 Blueshift Technologies, Inc. Stacked process modules for a semiconductor handling system
US7458763B2 (en) 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
US20070269297A1 (en) 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US8403613B2 (en) * 2003-11-10 2013-03-26 Brooks Automation, Inc. Bypass thermal adjuster for vacuum semiconductor processing
US20050205210A1 (en) * 2004-01-06 2005-09-22 Devine Daniel J Advanced multi-pressure workpiece processing
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060045668A1 (en) * 2004-07-19 2006-03-02 Grabowski Al W System for handling of wafers within a process tool
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US8668422B2 (en) * 2004-08-17 2014-03-11 Mattson Technology, Inc. Low cost high throughput processing platform
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US20060167583A1 (en) * 2005-01-22 2006-07-27 Applied Materials, Inc. Method and apparatus for on the fly positioning and continuous monitoring of a substrate in a chamber
US7585141B2 (en) * 2005-02-01 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Load lock system for ion beam processing
KR101133090B1 (en) * 2005-03-30 2012-04-04 파나소닉 주식회사 Impurity introduction apparatus and method of impurity introduction
JP4860167B2 (en) * 2005-03-30 2012-01-25 東京エレクトロン株式会社 Load lock device, processing system, and processing method
JP4748649B2 (en) * 2005-04-15 2011-08-17 キヤノン株式会社 Drive device
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US20100270004A1 (en) * 2005-05-12 2010-10-28 Landess James D Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates
JP2007005582A (en) * 2005-06-24 2007-01-11 Asm Japan Kk Substrate transfer apparatus and semiconductor substrate manufacturing apparatus mounted with the same
US7941039B1 (en) 2005-07-18 2011-05-10 Novellus Systems, Inc. Pedestal heat transfer and temperature control
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US20070119370A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
JP2007242648A (en) * 2006-03-04 2007-09-20 Masato Toshima Substrate processing apparatus
US20070215049A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Transfer of wafers with edge grip
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7695232B2 (en) * 2006-06-15 2010-04-13 Applied Materials, Inc. Multi-level load lock chamber, transfer chamber, and robot suitable for interfacing with same
WO2008008727A2 (en) * 2006-07-10 2008-01-17 Applied Materials, Inc. Scheduling method for processing equipment
US20080051930A1 (en) * 2006-07-10 2008-02-28 Oh Hilario L Scheduling method for processing equipment
US7522968B2 (en) * 2006-07-10 2009-04-21 Applied Materials, Inc. Scheduling method for processing equipment
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US8920097B2 (en) * 2006-11-02 2014-12-30 Globalfoundries Singapore Pte. Ltd. Wafer handling system for a loadlock
US20080138178A1 (en) * 2006-12-06 2008-06-12 Axcelis Technologies,Inc. High throughput serial wafer handling end station
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating
US20080206987A1 (en) 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
KR100887161B1 (en) * 2007-08-03 2009-03-09 주식회사 에이디피엔지니어링 Plasma treatment apparatus
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US8052419B1 (en) 2007-11-08 2011-11-08 Novellus Systems, Inc. Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
TWI472882B (en) * 2008-05-06 2015-02-11 Novellus Systems Inc Photoresist stripping method and apparatus
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
TWI436831B (en) 2009-12-10 2014-05-11 Orbotech Lt Solar Llc A showerhead assembly for vacuum processing apparatus
US8911554B2 (en) * 2010-01-05 2014-12-16 Applied Materials, Inc. System for batch processing of magnetic media
JP5476171B2 (en) * 2010-03-16 2014-04-23 株式会社日立ハイテクノロジーズ Vacuum processing equipment
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
US10023954B2 (en) 2011-09-15 2018-07-17 Applied Materials, Inc. Slit valve apparatus, systems, and methods
KR20140119726A (en) 2012-01-06 2014-10-10 노벨러스 시스템즈, 인코포레이티드 Adaptive heat transfer methods and systems for uniform heat transfer
JP6024372B2 (en) * 2012-10-12 2016-11-16 Tdk株式会社 Substrate processing apparatus and substrate processing chamber module
JP2014086578A (en) * 2012-10-19 2014-05-12 Applied Materials Inc Orienter chamber
JP5750472B2 (en) * 2013-05-22 2015-07-22 株式会社安川電機 Substrate transport robot, substrate transport system, and method for detecting substrate arrangement state
US10328580B2 (en) * 2013-08-09 2019-06-25 Persimmon Technologies Corporation Reduced footprint substrate transport vacuum platform
US9378992B2 (en) 2014-06-27 2016-06-28 Axcelis Technologies, Inc. High throughput heated ion implantation system and method
US9607803B2 (en) 2015-08-04 2017-03-28 Axcelis Technologies, Inc. High throughput cooled ion implantation system and method
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US10043693B1 (en) 2017-06-06 2018-08-07 Applied Materials, Inc. Method and apparatus for handling substrates in a processing system having a buffer chamber
US11117265B2 (en) 2019-07-12 2021-09-14 Applied Materials, Inc. Robot for simultaneous substrate transfer
WO2021011229A1 (en) 2019-07-12 2021-01-21 Applied Materials, Inc. Robot for simultaneous substrate transfer
US11574826B2 (en) * 2019-07-12 2023-02-07 Applied Materials, Inc. High-density substrate processing systems and methods
US11177048B2 (en) * 2019-11-20 2021-11-16 Applied Materials Israel Ltd. Method and system for evaluating objects

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357115A (en) * 1991-03-01 1994-10-18 Tokyo Electron Limited Processing method for wafers
EP1107288A2 (en) * 1999-11-30 2001-06-13 Applied Materials, Inc. Substrate processing system and method
EP1146548A1 (en) * 1998-11-17 2001-10-17 Tokyo Electron Limited Vacuum processing system

Family Cites Families (211)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (en) 1999-10-15 2007-07-31 Asm Int Process for modifying the starting chemical in an ALD process
SE393967B (en) 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
FI57975C (en) 1979-02-28 1980-11-10 Lohja Ab Oy OVER ANCHORING VIDEO UPDATE FOR AVAILABILITY
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
FI64878C (en) 1982-05-10 1984-01-10 Lohja Ab Oy KOMBINATIONSFILM FOER ISYNNERHET TUNNFILMELEKTROLUMINENSSTRUKTURER
JPS6065712A (en) 1983-09-20 1985-04-15 Toshiba Corp Formation of silicon oxide coating film
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766910B2 (en) 1984-07-26 1995-07-19 新技術事業団 Semiconductor single crystal growth equipment
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US4829022A (en) 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0834180B2 (en) 1986-08-26 1996-03-29 セイコー電子工業株式会社 Method for growing compound semiconductor thin film
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH0639357B2 (en) 1986-09-08 1994-05-25 新技術開発事業団 Method for growing element semiconductor single crystal thin film
JP2587623B2 (en) 1986-11-22 1997-03-05 新技術事業団 Epitaxial crystal growth method for compound semiconductor
JP2929291B2 (en) 1986-12-04 1999-08-03 セイコーインスツルメンツ株式会社 Method of manufacturing insulated gate field effect transistor
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
DE3704505A1 (en) 1987-02-13 1988-08-25 Leybold Ag INSERT UNIT FOR VACUUM SYSTEMS
JPH0727861B2 (en) 1987-03-27 1995-03-29 富士通株式会社 Method for growing group III compound semiconductor crystal
JPH0812844B2 (en) 1987-03-27 1996-02-07 日本電気株式会社 (III) -Group V compound semiconductor and method for forming the same
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
DE3721637A1 (en) 1987-06-30 1989-01-12 Aixtron Gmbh GAS INLET FOR A MULTIPLE DIFFERENT REACTION GAS IN REACTION VESSELS
JPH0666274B2 (en) 1987-07-01 1994-08-24 日本電気株式会社 (III) -Method for forming group V compound semiconductor
US4840921A (en) 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
FI81926C (en) 1987-09-29 1990-12-10 Nokia Oy Ab FOERFARANDE FOER UPPBYGGNING AV GAAS-FILMER PAO SI- OCH GAAS-SUBSTRATER.
DE3743938C2 (en) 1987-12-23 1995-08-31 Cs Halbleiter Solartech Process for atomic layer epitaxy growth of a III / V compound semiconductor thin film
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
DE3851701T2 (en) 1988-06-03 1995-03-30 Ibm Process for the production of artificial high-temperature superconductors with a multilayer structure.
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US4923584A (en) * 1988-10-31 1990-05-08 Eaton Corporation Sealing apparatus for a vacuum processing system
US5019233A (en) * 1988-10-31 1991-05-28 Eaton Corporation Sputtering system
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
US5200017A (en) 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
JPH0824191B2 (en) 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
AU5977190A (en) 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
JP2926798B2 (en) 1989-11-20 1999-07-28 国際電気株式会社 Continuous processing etching method and apparatus
EP0430274A3 (en) 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
US5290748A (en) 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JPH07105497B2 (en) 1990-01-31 1995-11-13 新技術事業団 Semiconductor device and manufacturing method thereof
DE4004276A1 (en) 1990-02-13 1991-08-14 Amazonen Werke Dreyer H SUPPORT ROLLER
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
JPH042699A (en) 1990-04-18 1992-01-07 Mitsubishi Electric Corp Growing of crystal
US5091320A (en) 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
DE4027628A1 (en) 1990-08-31 1992-03-05 Wolters Peter Fa DEVICE FOR CONTROLLING OR CONTROLLING LAEPP, HONING OR POLISHING MACHINES
US5483919A (en) 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
US5286296A (en) 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5705224A (en) 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
US6001669A (en) 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
JP2646905B2 (en) * 1991-09-13 1997-08-27 株式会社日立製作所 Vacuum processing apparatus and operating method thereof
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JP2987379B2 (en) 1991-11-30 1999-12-06 科学技術振興事業団 Method for epitaxial growth of semiconductor crystal
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
EP0641493B1 (en) 1992-05-22 2000-06-28 Minnesota Mining And Manufacturing Company Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
FI91422C (en) 1992-06-18 1994-06-27 Mikrokemia Oy Process and apparatus for supplying liquid reagents to a chemical reactor
JPH0750690B2 (en) 1992-08-21 1995-05-31 日本電気株式会社 Method and apparatus for epitaxial growth of semiconductor crystal using halide
JP3405466B2 (en) 1992-09-17 2003-05-12 富士通株式会社 Fluid switching valve and semiconductor device manufacturing apparatus
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
JPH06177349A (en) 1992-12-02 1994-06-24 Matsushita Electric Ind Co Ltd High density dram and manufacture thereof
US5607009A (en) 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
JP3265042B2 (en) 1993-03-18 2002-03-11 東京エレクトロン株式会社 Film formation method
JP3124861B2 (en) 1993-03-24 2001-01-15 富士通株式会社 Thin film growth method and semiconductor device manufacturing method
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
JPH0729897A (en) 1993-06-25 1995-01-31 Nec Corp Manufacture of semiconductor device
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
JP3181171B2 (en) 1994-05-20 2001-07-03 シャープ株式会社 Vapor phase growth apparatus and vapor phase growth method
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5486080A (en) * 1994-06-30 1996-01-23 Diamond Semiconductor Group, Inc. High speed movement of workpieces in vacuum processing
JP3008782B2 (en) 1994-07-15 2000-02-14 信越半導体株式会社 Vapor phase growth method and apparatus
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5641984A (en) 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
TW295677B (en) 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
JPH08148431A (en) 1994-11-24 1996-06-07 Mitsubishi Electric Corp Mbe apparatus and gas branch-piping apparatus
FI97730C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Equipment for the production of thin films
FI100409B (en) 1994-11-28 1997-11-28 Asm Int Method and apparatus for making thin films
FI97731C (en) 1994-11-28 1997-02-10 Mikrokemia Oy Method and apparatus for making thin films
JP3288200B2 (en) 1995-06-09 2002-06-04 東京エレクトロン株式会社 Vacuum processing equipment
KR100244041B1 (en) 1995-08-05 2000-02-01 엔도 마코토 Substrate processing apparatus
US5672054A (en) 1995-12-07 1997-09-30 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US6084302A (en) 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
FI107533B (en) 1996-04-03 2001-08-31 Fortum Oil & Gas Oy Functional surfaces for conducting chemical reactions and processes for their preparation
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP2923753B2 (en) 1996-08-21 1999-07-26 工業技術院長 Method for forming group III atomic layer
KR100216542B1 (en) 1996-08-27 1999-08-16 정선종 Multi-target driving apparatus for pulse laser depositing system
FI100758B (en) 1996-09-11 1998-02-13 Planar Internat Oy Ltd Methods to Form a Luminescence Layer of ZnS: Mn for Thin Film Electroluminescence Components
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US6043177A (en) 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JPH10308283A (en) 1997-03-04 1998-11-17 Denso Corp El element and its manufacture
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
US5882413A (en) 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
KR100385946B1 (en) 1999-12-08 2003-06-02 삼성전자주식회사 Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100269306B1 (en) 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
JPH11135600A (en) * 1997-08-25 1999-05-21 Shibaura Mechatronics Corp Robot apparatus and treating apparatus
US5904569A (en) 1997-09-03 1999-05-18 National Semiconductor Corporation Method for forming self-aligned vias in multi-metal integrated circuits
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
KR100274603B1 (en) 1997-10-01 2001-01-15 윤종용 Method and apparatus for fabricating semiconductor device
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
KR100252049B1 (en) 1997-11-18 2000-04-15 윤종용 The atomic layer deposition method for fabricating aluminum layer
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
KR100269328B1 (en) 1997-12-31 2000-10-16 윤종용 Method for forming conductive layer using atomic layer deposition process
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
KR100267885B1 (en) 1998-05-18 2000-11-01 서성기 Deposition apparatus
KR100282853B1 (en) 1998-05-18 2001-04-02 서성기 Apparatus for thin film deposition using cyclic gas injection
US6025627A (en) 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
FI105313B (en) 1998-06-03 2000-07-14 Planar Systems Oy Process for the preparation of thin film electroluminescence structures
NL1009327C2 (en) 1998-06-05 1999-12-10 Asm Int Method and device for transferring wafers.
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2000031387A (en) 1998-07-14 2000-01-28 Fuji Electric Co Ltd Manufacture of dielectric thin film capacitor
KR100275738B1 (en) 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
KR20000013654A (en) 1998-08-12 2000-03-06 윤종용 Capacitor having an al2o3/aln mixed dielectric layer by using an atomic layer deposition and a manufacturing method thereof
KR100327105B1 (en) 1998-08-14 2002-03-09 오길록 High luminance-phosphor and method for fabricating the same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
FI105643B (en) 1998-08-21 2000-09-15 Planar Systems Oy Thin-film electroluminescent device and method for its manufacture
KR20000022003A (en) 1998-09-10 2000-04-25 이경수 Method for forming three-components compound comprising metal and silicon
KR100273474B1 (en) 1998-09-14 2000-12-15 이경수 Gas supply apparatus of chemical vapor deposition apparatus
KR100331544B1 (en) 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein
JP2995300B1 (en) 1999-02-03 1999-12-27 工業技術院長 Surface improvement method for machine element parts
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
KR100273473B1 (en) 1999-04-06 2000-11-15 이경수 Method for forming a thin film
JP2000299367A (en) * 1999-04-15 2000-10-24 Tokyo Electron Ltd Processing apparatus and transfer method of article to be processed
KR100347379B1 (en) 1999-05-01 2002-08-07 주식회사 피케이엘 Atomic layer deposition apparatus for depositing multi substrate
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Apparatus for making thin films
JP2000340883A (en) 1999-05-27 2000-12-08 Fujitsu Ltd Multiwavelength oscillating optical semiconductor device
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP2000353666A (en) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Semiconductor thin film and manufacture thereof
US6539891B1 (en) 1999-06-19 2003-04-01 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
JP2003502878A (en) 1999-06-24 2003-01-21 ナーハ ガジル、プラサード Atomic layer chemical vapor deposition system
US6244811B1 (en) * 1999-06-29 2001-06-12 Lam Research Corporation Atmospheric wafer transfer module with nest for wafer transport robot
KR100319494B1 (en) 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
TW515032B (en) 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method
FI117942B (en) 1999-10-14 2007-04-30 Asm Int Process for making oxide thin films
US6902763B1 (en) 1999-10-15 2005-06-07 Asm International N.V. Method for depositing nanolaminate thin films on sensitive surfaces
AU1088401A (en) 1999-10-15 2001-04-30 Asm Microchemistry Oy Deposition of transition metal carbides
KR100795534B1 (en) 1999-10-15 2008-01-16 에이에스엠 인터내셔널 엔.브이. Conformal lining layers for damascene metallization
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
TW468212B (en) 1999-10-25 2001-12-11 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
KR20010047128A (en) 1999-11-18 2001-06-15 이경수 Method of vaporizing a liquid source and apparatus used therefor
FI118804B (en) 1999-12-03 2008-03-31 Asm Int Process for making oxide films
KR100330749B1 (en) 1999-12-17 2002-04-03 서성기 Thin film deposition apparatus for semiconductor
FI118343B (en) 1999-12-28 2007-10-15 Asm Int Apparatus for making thin films
FI118474B (en) 1999-12-28 2007-11-30 Asm Int Apparatus for making thin films
JP4817210B2 (en) 2000-01-06 2011-11-16 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP4362919B2 (en) 2000-02-04 2009-11-11 株式会社デンソー Deposition method by atomic layer epitaxial growth method
JP4776054B2 (en) 2000-02-04 2011-09-21 株式会社デンソー Thin film formation method by atomic layer growth
KR100378871B1 (en) 2000-02-16 2003-04-07 주식회사 아펙스 showerhead apparatus for radical assisted deposition
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
JP4211185B2 (en) 2000-02-29 2009-01-21 株式会社デンソー Glass substrate storage jig for CVD and ALE equipment
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
JP4556282B2 (en) 2000-03-31 2010-10-06 株式会社デンソー Organic EL device and method for manufacturing the same
FI117980B (en) 2000-04-14 2007-05-15 Asm Int A method of constructing a thin film on a substrate
FI117978B (en) 2000-04-14 2007-05-15 Asm Int Method and apparatus for constructing a thin film on a substrate
KR100363088B1 (en) 2000-04-20 2002-12-02 삼성전자 주식회사 Method of manufacturing barrier metal layer using atomic layer deposition method
JP2001328900A (en) 2000-05-15 2001-11-27 Denso Corp Method for forming thin film
FI118805B (en) 2000-05-15 2008-03-31 Asm Int A method and configuration for introducing a gas phase reactant into a reaction chamber
KR100332314B1 (en) 2000-06-24 2002-04-12 서성기 Reactor for depositing thin film on wafer
KR100332313B1 (en) 2000-06-24 2002-04-12 서성기 Apparatus and method for depositing thin film on wafer
KR100444149B1 (en) 2000-07-22 2004-08-09 주식회사 아이피에스 ALD thin film depositin equipment cleaning method
KR100436941B1 (en) 2000-11-07 2004-06-23 주성엔지니어링(주) apparatus and method for depositing thin film
KR100434487B1 (en) 2001-01-17 2004-06-05 삼성전자주식회사 Shower head & film forming apparatus having the same
JP4680429B2 (en) 2001-06-26 2011-05-11 Ｏｋｉセミコンダクタ株式会社 High speed reading control method in text-to-speech converter
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
ATE339773T1 (en) * 2001-11-29 2006-10-15 Diamond Semiconductor Group Ll WATER HANDLING APPARATUS AND METHOD THEREOF

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357115A (en) * 1991-03-01 1994-10-18 Tokyo Electron Limited Processing method for wafers
EP1146548A1 (en) * 1998-11-17 2001-10-17 Tokyo Electron Limited Vacuum processing system
EP1107288A2 (en) * 1999-11-30 2001-06-13 Applied Materials, Inc. Substrate processing system and method

Also Published As

Publication number Publication date
US20030113187A1 (en) 2003-06-19
TW200301212A (en) 2003-07-01
US6729824B2 (en) 2004-05-04
WO2003052802A2 (en) 2003-06-26

Similar Documents

Publication Publication Date Title
WO2003052802A3 (en) Dual robot processing system
USD410979S (en) Golf ball with pentagon-shaped pattern
USD410511S (en) Golf ball with pentagon-shaped pattern
USD419626S (en) Golf ball with contoured-shaped pattern
WO2003017354A1 (en) Semiconductor processing system
CA2233465A1 (en) Ceramic honeycomb structural body
WO2004045671A3 (en) Microstructure roller system
CA2173872A1 (en) Telomerase activity assays
WO1999053319A3 (en) High-density, miniaturized arrays and methods of manufacturing same
CA2170473A1 (en) Snap-hook with locking ring
EP0947607A3 (en) Members with multi-layer coatings
CA2443114A1 (en) Laminated material
CA2326455A1 (en) Wafer-pair having deposited layer sealed chambers
WO2003004430A8 (en) Glass panel
CA2399524A1 (en) Vehicle body rear part structure
WO2004025711A3 (en) Large area substrate processing system
CA2395958A1 (en) Composite tool and method of manufacture
EP0980917A3 (en) Aluminium oxide-coated tool member
WO2003003417A3 (en) High throughput hybrid deposition system and method using the same
USD436311S1 (en) Set of locking members
CA2390664A1 (en) Hinge assembly for a truss
EP1323398A3 (en) Drapable absorbant article
CA2235914A1 (en) Joint
CA2284637A1 (en) Diaphragm valve
USD428425S (en) Load handling vehicle

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP