WO2003038892A3 - Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization - Google Patents

Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization Download PDF

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Publication number
WO2003038892A3
WO2003038892A3 PCT/US2002/034277 US0234277W WO03038892A3 WO 2003038892 A3 WO2003038892 A3 WO 2003038892A3 US 0234277 W US0234277 W US 0234277W WO 03038892 A3 WO03038892 A3 WO 03038892A3
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WO
WIPO (PCT)
Prior art keywords
layer
atomic
alpha
tantalum
barrier layers
Prior art date
Application number
PCT/US2002/034277
Other languages
French (fr)
Other versions
WO2003038892A2 (en
Inventor
Ling Chen
Hua Chung
Sean M Seutter
Michael X Yang
Ming Yi
Vincent Ku
Dien-Yeh Wu
Alan Ouye
Norman Nakashima
Barry Chin
Hong Zhang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/193,333 external-priority patent/US20030082307A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2003541048A priority Critical patent/JP4711624B2/en
Priority to CNB02821269XA priority patent/CN1319146C/en
Priority to KR10-2004-7006190A priority patent/KR20040058239A/en
Publication of WO2003038892A2 publication Critical patent/WO2003038892A2/en
Publication of WO2003038892A3 publication Critical patent/WO2003038892A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Abstract

A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness of less than 2nm so as to exhibit a crystalline like structure and is being sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.
PCT/US2002/034277 2001-10-26 2002-10-25 Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization WO2003038892A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003541048A JP4711624B2 (en) 2001-10-26 2002-10-25 Integration of ALD tantalum nitride and alpha phase tantalum for copper electrode formation applications
CNB02821269XA CN1319146C (en) 2001-10-26 2002-10-25 Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application
KR10-2004-7006190A KR20040058239A (en) 2001-10-26 2002-10-25 Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US34608601P 2001-10-26 2001-10-26
US60/346,086 2001-10-26
US10/193,333 2002-07-10
US10/193,333 US20030082307A1 (en) 2001-10-26 2002-07-10 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
US10/199,415 2002-07-18
US10/199,415 US20030082301A1 (en) 2001-10-26 2002-07-18 Enhanced copper growth with ultrathin barrier layer for high performance interconnects

Publications (2)

Publication Number Publication Date
WO2003038892A2 WO2003038892A2 (en) 2003-05-08
WO2003038892A3 true WO2003038892A3 (en) 2004-02-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/034277 WO2003038892A2 (en) 2001-10-26 2002-10-25 Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization

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JP (1) JP4711624B2 (en)
CN (1) CN1319146C (en)
TW (1) TWI223867B (en)
WO (1) WO2003038892A2 (en)

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Publication number Priority date Publication date Assignee Title
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
CN100593235C (en) * 2003-06-13 2010-03-03 应用材料公司 Integration of ALD tantalum nitride for copper metallization
US7605469B2 (en) 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
JP4783561B2 (en) * 2004-09-27 2011-09-28 株式会社アルバック Method for forming copper wiring
CN100369215C (en) * 2005-12-02 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 Adsorption stripping process for removing exposed zone polymer
JP2007073980A (en) * 2006-10-30 2007-03-22 Toshiba Corp Tan film for semiconductor device and semiconductor device using the same
KR100881716B1 (en) 2007-07-02 2009-02-06 주식회사 하이닉스반도체 Method for fabricating tungsten line with reduced sheet resistance tungsten layer and method for fabricating gate of semiconductor device using the same
JP2012506947A (en) * 2008-10-27 2012-03-22 アプライド マテリアルズ インコーポレイテッド Method for vapor deposition of ternary compounds
US8227344B2 (en) * 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
KR101661768B1 (en) 2010-09-03 2016-09-30 엘지전자 주식회사 Solar cell and manufacturing method thereof
CN103151302A (en) * 2013-02-26 2013-06-12 复旦大学 Method for preparing low-resistance tantalum and tantalum nitride double-layer barrier layer by utilizing nitrogen-containing plasma
KR101708242B1 (en) * 2016-08-11 2017-02-20 엘지전자 주식회사 Solar cell and manufacturing method thereof
US10229826B2 (en) * 2016-10-21 2019-03-12 Lam Research Corporation Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide
CN109273402B (en) * 2018-09-13 2020-08-25 德淮半导体有限公司 Manufacturing method of metal barrier layer, metal interconnection structure and manufacturing method thereof
TWI731293B (en) * 2019-01-18 2021-06-21 元智大學 Nanotwinned structure

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EP1077484A2 (en) * 1999-08-16 2001-02-21 Applied Materials, Inc. Barrier layer for electroplating processes
WO2001029891A1 (en) * 1999-10-15 2001-04-26 Asm America, Inc. Conformal lining layers for damascene metallization
US6270572B1 (en) * 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition

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US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JP4097747B2 (en) * 1997-08-07 2008-06-11 株式会社アルバック Barrier film formation method
US6140234A (en) * 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
KR100279300B1 (en) * 1998-05-11 2001-02-01 윤종용 How to connect metal wires
US6218302B1 (en) * 1998-07-21 2001-04-17 Motorola Inc. Method for forming a semiconductor device
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
JP2001144089A (en) * 1999-11-11 2001-05-25 Sony Corp Method of manufacturing semiconductor device
JP2003531291A (en) * 2000-04-13 2003-10-21 ゲレスト インコーポレイテッド Method for chemical vapor deposition of titanium-silicon-nitrogen film

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Publication number Priority date Publication date Assignee Title
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
US6270572B1 (en) * 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition
EP1077484A2 (en) * 1999-08-16 2001-02-21 Applied Materials, Inc. Barrier layer for electroplating processes
WO2001029891A1 (en) * 1999-10-15 2001-04-26 Asm America, Inc. Conformal lining layers for damascene metallization

Also Published As

Publication number Publication date
JP2005508092A (en) 2005-03-24
CN1319146C (en) 2007-05-30
JP4711624B2 (en) 2011-06-29
TWI223867B (en) 2004-11-11
WO2003038892A2 (en) 2003-05-08
CN1575517A (en) 2005-02-02

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