WO2003009368A3 - Low emitter resistance contacts to gaas high speed hbt - Google Patents

Low emitter resistance contacts to gaas high speed hbt Download PDF

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Publication number
WO2003009368A3
WO2003009368A3 PCT/US2002/023278 US0223278W WO03009368A3 WO 2003009368 A3 WO2003009368 A3 WO 2003009368A3 US 0223278 W US0223278 W US 0223278W WO 03009368 A3 WO03009368 A3 WO 03009368A3
Authority
WO
WIPO (PCT)
Prior art keywords
high speed
emitter resistance
resistance contacts
low emitter
gaas high
Prior art date
Application number
PCT/US2002/023278
Other languages
French (fr)
Other versions
WO2003009368A2 (en
Inventor
Noren Pan
Byung-Kwon Han
Original Assignee
Microlink Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microlink Devices Inc filed Critical Microlink Devices Inc
Publication of WO2003009368A2 publication Critical patent/WO2003009368A2/en
Publication of WO2003009368A3 publication Critical patent/WO2003009368A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys

Abstract

A heterojunction bipolar transistor, (40), is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor, (40), shown in Figure 1, includes a contact region layer (22), formed from InGaAsSb. The contact region, (20/22), allows an emitter region, (18), of the heterojunction bipolar transistor, (40), to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
PCT/US2002/023278 2001-07-20 2002-07-22 Low emitter resistance contacts to gaas high speed hbt WO2003009368A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30683301P 2001-07-20 2001-07-20
US60/306,833 2001-07-20

Publications (2)

Publication Number Publication Date
WO2003009368A2 WO2003009368A2 (en) 2003-01-30
WO2003009368A3 true WO2003009368A3 (en) 2003-11-27

Family

ID=23187065

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023278 WO2003009368A2 (en) 2001-07-20 2002-07-22 Low emitter resistance contacts to gaas high speed hbt

Country Status (1)

Country Link
WO (1) WO2003009368A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314088C (en) * 2003-11-10 2007-05-02 四川大学 Double pole transistor structure design of low start voltage gallium arsenide base new structure hetero junction

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338834A (en) * 1989-07-06 1991-02-19 Nec Corp Semiconductor crystal
US5598015A (en) * 1992-09-18 1997-01-28 Hitachi, Ltd. Hetero-junction bipolar transistor and semiconductor devices using the same
US6232624B1 (en) * 1999-07-12 2001-05-15 Hughes Electronics Corporation InPSb channel HEMT on InP for RF application
US6287946B1 (en) * 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6429468B1 (en) * 2000-12-30 2002-08-06 National Science Council In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338834A (en) * 1989-07-06 1991-02-19 Nec Corp Semiconductor crystal
US5598015A (en) * 1992-09-18 1997-01-28 Hitachi, Ltd. Hetero-junction bipolar transistor and semiconductor devices using the same
US6287946B1 (en) * 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
US6232624B1 (en) * 1999-07-12 2001-05-15 Hughes Electronics Corporation InPSb channel HEMT on InP for RF application
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6429468B1 (en) * 2000-12-30 2002-08-06 National Science Council In0.34A10.66AsSb0.15/InP HFET utilizing InP channels

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HUMMEL R.E.: "Electronic properties of materials", 2001, SPRINGER, XP002960165 *
OHRING M.: "Materials science of thin films", 2002, ACADEMIC, pages: 444 - 450, XP002960178 *

Also Published As

Publication number Publication date
WO2003009368A2 (en) 2003-01-30

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