WO2002060024A3 - Resonant reflector for use with optoelectronic devices - Google Patents

Resonant reflector for use with optoelectronic devices Download PDF

Info

Publication number
WO2002060024A3
WO2002060024A3 PCT/US2001/049089 US0149089W WO02060024A3 WO 2002060024 A3 WO2002060024 A3 WO 2002060024A3 US 0149089 W US0149089 W US 0149089W WO 02060024 A3 WO02060024 A3 WO 02060024A3
Authority
WO
WIPO (PCT)
Prior art keywords
resonant reflector
optoelectronic device
layer
optoelectronic devices
waveguide
Prior art date
Application number
PCT/US2001/049089
Other languages
French (fr)
Other versions
WO2002060024A2 (en
Inventor
James Allen Cox
Robert A Morgan
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP01994296A priority Critical patent/EP1362396B1/en
Priority to KR10-2003-7008907A priority patent/KR20030068573A/en
Priority to JP2002560248A priority patent/JP2004521491A/en
Priority to DE60118035T priority patent/DE60118035T2/en
Publication of WO2002060024A2 publication Critical patent/WO2002060024A2/en
Publication of WO2002060024A3 publication Critical patent/WO2002060024A3/en
Priority to HK04103545A priority patent/HK1061609A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Abstract

An optoelectronic device that provides isolation between a resonant reflector (84) and an adjacent conducting layer (86) of the optoelectronic device. Isolation may be accomplished by providing a buffer or cladding layer (80) between the resonant reflector (84) and the adjacent conducting layer (86) of the optoelectronic device. The cladding or buffer layer (80) is preferably sufficiently thick, or has a sufficiently low refractive index relative to the refractive index of the waveguide 882) of the resonant reflector (84), to substantially prevent energy in the evanescent tail of the guided mode in the waveguide (82) from entering the adjacent conductive layer (86) of the optoelectronic device.
PCT/US2001/049089 2000-12-29 2001-12-18 Resonant reflector for use with optoelectronic devices WO2002060024A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01994296A EP1362396B1 (en) 2000-12-29 2001-12-18 Resonant reflector for use with optoelectronic devices
KR10-2003-7008907A KR20030068573A (en) 2000-12-29 2001-12-18 Resonant reflector for use with optoelectronic devices
JP2002560248A JP2004521491A (en) 2000-12-29 2001-12-18 Resonant reflector for use with optoelectronic devices
DE60118035T DE60118035T2 (en) 2000-12-29 2001-12-18 RESONANCE REFLECTOR FOR USE WITH OPTOELECTRONIC EQUIPMENT
HK04103545A HK1061609A1 (en) 2000-12-29 2004-05-19 Resonant reflector for use with optoelectronic devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,422 2000-12-29
US09/751,422 US6782027B2 (en) 2000-12-29 2000-12-29 Resonant reflector for use with optoelectronic devices

Publications (2)

Publication Number Publication Date
WO2002060024A2 WO2002060024A2 (en) 2002-08-01
WO2002060024A3 true WO2002060024A3 (en) 2003-01-16

Family

ID=25021909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/049089 WO2002060024A2 (en) 2000-12-29 2001-12-18 Resonant reflector for use with optoelectronic devices

Country Status (9)

Country Link
US (2) US6782027B2 (en)
EP (1) EP1362396B1 (en)
JP (1) JP2004521491A (en)
KR (1) KR20030068573A (en)
AT (1) ATE320671T1 (en)
DE (1) DE60118035T2 (en)
HK (1) HK1061609A1 (en)
TW (1) TW552750B (en)
WO (1) WO2002060024A2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727520B2 (en) 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6813431B2 (en) * 2002-02-26 2004-11-02 Intel Corporation Integrated photodevice and waveguide
JP4074498B2 (en) * 2002-09-25 2008-04-09 セイコーエプソン株式会社 Surface emitting light emitting device, optical module, and optical transmission device
US7299991B2 (en) * 2003-04-08 2007-11-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Reflective members for use in encoder systems
TW200505120A (en) * 2003-07-29 2005-02-01 Copax Photonics Corp Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same
US7269196B2 (en) * 2004-07-06 2007-09-11 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7385691B2 (en) * 2005-01-27 2008-06-10 Hewlett-Packard Development Company, L.P. Integrated modular system and method for enhanced Raman spectroscopy
US7136160B2 (en) * 2005-01-27 2006-11-14 Hewlett-Packard Development Company, L.P. Integrated system and method for transversal enhanced Raman Spectroscopy
US7151599B2 (en) * 2005-01-27 2006-12-19 Hewlett-Packard Development Company, L.P. Monolithic system and method for enhanced Raman spectroscopy
JP4515949B2 (en) * 2005-03-31 2010-08-04 株式会社東芝 Planar optical semiconductor device
US7629661B2 (en) * 2006-02-10 2009-12-08 Noble Peak Vision Corp. Semiconductor devices with photoresponsive components and metal silicide light blocking structures
JP2007234824A (en) * 2006-02-28 2007-09-13 Canon Inc Vertical resonator type surface-emitting laser
US7805826B1 (en) * 2006-07-06 2010-10-05 Hewlett-Packard Development Company, L.P. Fabrication of slot waveguide
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US8197147B2 (en) * 2006-09-13 2012-06-12 Edith Cowan University Optical connection component
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
JP5300344B2 (en) * 2007-07-06 2013-09-25 キヤノン株式会社 Photodetection element, imaging element, photodetection method, and imaging method
JP4911774B2 (en) 2007-07-25 2012-04-04 パナソニック株式会社 Optical transceiver and optical communication system using the same
US8432946B2 (en) * 2007-12-06 2013-04-30 Rohm Co., Ltd. Nitride semiconductor laser diode
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
US8646949B2 (en) * 2010-03-03 2014-02-11 LumenFlow Corp. Constrained folded path resonant white light scintillator
EP2803123B1 (en) 2012-01-12 2020-11-25 Hewlett-Packard Enterprise Development LP Integrated sub-wavelength grating system
KR20140112015A (en) * 2012-01-18 2014-09-22 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. Integrated sub-wavelength grating element
KR20130085763A (en) * 2012-01-20 2013-07-30 삼성전자주식회사 Hybrid laser light source for photonic integrated circuit
TW201504599A (en) * 2013-05-30 2015-02-01 Univ California Polarization independent photodetector with high contrast grating and two dimensional period structure that can be used as dual usage HCG VCSEL-detector
US10826274B2 (en) 2018-02-12 2020-11-03 Lumentum Operations Llc Grating structure for surface-emitting laser
EP3821505A4 (en) * 2018-07-13 2022-07-06 The Government of the United States of America as represented by the Secretary of the Navy Highly stable semiconductor lasers and sensors for iii-v and silicon photonic integrated circuits
US10818807B2 (en) * 2019-01-21 2020-10-27 Globalfoundries Inc. Semiconductor detectors integrated with Bragg reflectors
US11437785B2 (en) * 2019-09-23 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. VCSEL with self-aligned microlens to improve beam divergence
CN110676689A (en) * 2019-10-12 2020-01-10 长春理工大学 Vertical cavity surface emitting semiconductor laser and preparation method thereof
US11340403B2 (en) * 2020-03-03 2022-05-24 Globalfoundries U.S. Inc. Photonic component with distributed Bragg reflectors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818066A (en) * 1995-11-21 1998-10-06 Thomson-Csf Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1108902A (en) 1978-06-15 1981-09-15 R. Ian Macdonald Wavelength selective optical coupler
US4317085A (en) 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
JPS60123084A (en) 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd Semiconductor light generator
US4660207A (en) 1984-11-21 1987-04-21 Northern Telecom Limited Surface-emitting light emitting device
US4784722A (en) 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
GB2203891A (en) 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
JPS63318195A (en) 1987-06-19 1988-12-27 Agency Of Ind Science & Technol Transverse buried type surface emitting laser
US4885592A (en) 1987-12-28 1989-12-05 Kofol J Stephen Electronically steerable antenna
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
JPH0254981A (en) 1988-08-20 1990-02-23 Fujitsu Ltd Surface-emission laser and laser array
US4943970A (en) 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4901327A (en) 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4956844A (en) 1989-03-17 1990-09-11 Massachusetts Institute Of Technology Two-dimensional surface-emitting laser array
US5031187A (en) 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5204871A (en) 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5115442A (en) 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5034958A (en) 1990-04-19 1991-07-23 Bell Communications Research, Inc. Front-surface emitting diode laser
US5052016A (en) 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5056098A (en) 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
US5158908A (en) 1990-08-31 1992-10-27 At&T Bell Laboratories Distributed bragg reflectors and devices incorporating same
US5237581A (en) 1990-11-14 1993-08-17 Nec Corporation Semiconductor multilayer reflector and light emitting device with the same
US5216263A (en) 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5062115A (en) 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
US5140605A (en) 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
US5216680A (en) 1991-07-11 1993-06-01 Board Of Regents, The University Of Texas System Optical guided-mode resonance filter
US5258990A (en) 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5404373A (en) 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5325386A (en) 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
JP3206097B2 (en) 1992-04-22 2001-09-04 セイコーエプソン株式会社 Surface emitting semiconductor laser
US5245622A (en) 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5285466A (en) 1992-05-20 1994-02-08 Wisconsin Alumni Research Foundation Feedback mechanism for vertical cavity surface emitting lasers
US5293392A (en) 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
JPH0669585A (en) 1992-08-12 1994-03-11 Fujitsu Ltd Surface emitting semiconductor laser and its manufacture
US5363397A (en) 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
US5428634A (en) 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
DE4240706A1 (en) 1992-12-03 1994-06-09 Siemens Ag Surface emitting laser diode
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5351256A (en) 1993-04-28 1994-09-27 The United States Of America As Represented By The United States Department Of Energy Electrically injected visible vertical cavity surface emitting laser diodes
US5359618A (en) 1993-06-01 1994-10-25 Motorola, Inc. High efficiency VCSEL and method of fabrication
US5359447A (en) 1993-06-25 1994-10-25 Hewlett-Packard Company Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
US5446754A (en) 1993-11-05 1995-08-29 Photonics Research Incorporated Phased array semiconductor laser
US5475701A (en) 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
KR0132018B1 (en) 1994-01-27 1998-04-14 김만제 Circle grating surface emitting laser diode
US5513202A (en) 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5606572A (en) 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US6064783A (en) * 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
US5557626A (en) 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
US5778018A (en) 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US5530715A (en) 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5598300A (en) 1995-06-05 1997-01-28 Board Of Regents, The University Of Texas System Efficient bandpass reflection and transmission filters with low sidebands based on guided-mode resonance effects
US5978401A (en) 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
US5727013A (en) 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5903590A (en) 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US5940422A (en) 1996-06-28 1999-08-17 Honeywell Inc. Laser with an improved mode control
US5774487A (en) 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
US6064683A (en) 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
US6330388B1 (en) * 1999-01-27 2001-12-11 Northstar Photonics, Inc. Method and apparatus for waveguide optics and devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818066A (en) * 1995-11-21 1998-10-06 Thomson-Csf Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG S S ET AL: "MULTILAYER WAVEGUIDE-GRATING FILTERS", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, vol. 34, no. 14, 10 May 1995 (1995-05-10), pages 2414 - 2420, XP000511437, ISSN: 0003-6935 *

Also Published As

Publication number Publication date
KR20030068573A (en) 2003-08-21
DE60118035T2 (en) 2006-11-16
US20040248331A1 (en) 2004-12-09
US7288421B2 (en) 2007-10-30
US6782027B2 (en) 2004-08-24
ATE320671T1 (en) 2006-04-15
WO2002060024A2 (en) 2002-08-01
JP2004521491A (en) 2004-07-15
EP1362396B1 (en) 2006-03-15
TW552750B (en) 2003-09-11
US20030103542A1 (en) 2003-06-05
DE60118035D1 (en) 2006-05-11
EP1362396A2 (en) 2003-11-19
HK1061609A1 (en) 2004-09-24

Similar Documents

Publication Publication Date Title
WO2002060024A3 (en) Resonant reflector for use with optoelectronic devices
WO2002004999A3 (en) Graded index waveguide
WO2004088723A3 (en) Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (soi) platform
WO2004061494A3 (en) Magnetically active semiconductor waveguides for optoelectronic integration
WO2005077110A3 (en) Silicon nanotaper couplers and mode-matching devices
HK1080948A1 (en) Multi-mode interference optical waveguide device
AU2001233033A1 (en) Planar waveguides with high refractive index
CA2373564A1 (en) Optical wiring substrate, method of manufacturing optical wiring substrate and multilayer optical wiring
WO2005072229A3 (en) Active in-fiber optic components powered by in-fiber light
WO2005082801A3 (en) Optical fiber and method for making such fiber
WO2004088724A3 (en) Permanent light coupling arrangement and method for use with thin silicon optical waveguides
WO2002063347A3 (en) Integrated planar composite coupling structures transform between a small mode size and a large mode size waveguide
AU3887300A (en) Optical networking assembly
MY128382A (en) Horizontal access semiconductor photo detector
WO2004097902A3 (en) Arrangements for reducing wavelength sensitivity in prism-coupled soi-based optical systems
EP1219983A3 (en) Polarization independent optical waveguide circuit
WO2002042835A3 (en) Dual-wavelength hybrid waveguide coupler
EP0400377A3 (en) Construction of an optical fiber with a connector
AU2003240968A1 (en) Thermal compensation of waveguides by dual material core
WO2004083917A3 (en) Low-less optical fiber tap with integral reflecting suface
EP0623980A3 (en) Semiconductor laser with transverse emission, and coupling thereof to an optical waveguide.
WO2003075062A8 (en) Optical switch with 3d waveguides
EP1162483A3 (en) Optimization of optical waveguide positions and angles for efficient coupling of reflected waves
EP1605285A4 (en) Waveguide device using photonic crystal
ATE430393T1 (en) OPTOELECTRONIC DEVICES WITH FOLDED RESONATOR

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

WWE Wipo information: entry into national phase

Ref document number: 1020037008907

Country of ref document: KR

Ref document number: 2002560248

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2001994296

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020037008907

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001994296

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2001994296

Country of ref document: EP

WWR Wipo information: refused in national office

Ref document number: 1020037008907

Country of ref document: KR