WO2002009167A3 - High dielectric constant metal silicates formed by controlled metal-surface reactions - Google Patents
High dielectric constant metal silicates formed by controlled metal-surface reactions Download PDFInfo
- Publication number
- WO2002009167A3 WO2002009167A3 PCT/US2001/022711 US0122711W WO0209167A3 WO 2002009167 A3 WO2002009167 A3 WO 2002009167A3 US 0122711 W US0122711 W US 0122711W WO 0209167 A3 WO0209167 A3 WO 0209167A3
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- WO
- WIPO (PCT)
- Prior art keywords
- metal
- dielectric constant
- insulation layer
- high dielectric
- surface reactions
- Prior art date
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
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- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001280609A AU2001280609A1 (en) | 2000-07-20 | 2001-07-18 | High dielectric constant metal silicates formed by controlled metal-surface reactions |
EP01959012A EP1301941A2 (en) | 2000-07-20 | 2001-07-18 | High dielectric constant metal silicates formed by controlled metal-surface reactions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22046300P | 2000-07-20 | 2000-07-20 | |
US60/220,463 | 2000-07-20 |
Publications (2)
Publication Number | Publication Date |
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WO2002009167A2 WO2002009167A2 (en) | 2002-01-31 |
WO2002009167A3 true WO2002009167A3 (en) | 2002-06-27 |
Family
ID=22823629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/022711 WO2002009167A2 (en) | 2000-07-20 | 2001-07-18 | High dielectric constant metal silicates formed by controlled metal-surface reactions |
Country Status (5)
Country | Link |
---|---|
US (1) | US6521911B2 (en) |
EP (1) | EP1301941A2 (en) |
AU (1) | AU2001280609A1 (en) |
TW (1) | TWI259217B (en) |
WO (1) | WO2002009167A2 (en) |
Cited By (1)
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US9418890B2 (en) | 2008-09-08 | 2016-08-16 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
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US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6528374B2 (en) * | 2001-02-05 | 2003-03-04 | International Business Machines Corporation | Method for forming dielectric stack without interfacial layer |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6770923B2 (en) | 2001-03-20 | 2004-08-03 | Freescale Semiconductor, Inc. | High K dielectric film |
JP2002343790A (en) * | 2001-05-21 | 2002-11-29 | Nec Corp | Vapor-phase deposition method of metallic compound thin film and method for manufacturing semiconductor device |
US6642131B2 (en) | 2001-06-21 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film |
US8026161B2 (en) | 2001-08-30 | 2011-09-27 | Micron Technology, Inc. | Highly reliable amorphous high-K gate oxide ZrO2 |
US6844203B2 (en) * | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6900122B2 (en) * | 2001-12-20 | 2005-05-31 | Micron Technology, Inc. | Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics |
US6790755B2 (en) * | 2001-12-27 | 2004-09-14 | Advanced Micro Devices, Inc. | Preparation of stack high-K gate dielectrics with nitrided layer |
US6767795B2 (en) | 2002-01-17 | 2004-07-27 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOXNY |
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US6521911B2 (en) | 2003-02-18 |
TWI259217B (en) | 2006-08-01 |
WO2002009167A2 (en) | 2002-01-31 |
EP1301941A2 (en) | 2003-04-16 |
US20020043666A1 (en) | 2002-04-18 |
AU2001280609A1 (en) | 2002-02-05 |
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