WO2001080286A3 - Deposited thin films and their use in separation and sarcrificial layer applications - Google Patents

Deposited thin films and their use in separation and sarcrificial layer applications Download PDF

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Publication number
WO2001080286A3
WO2001080286A3 PCT/US2001/012281 US0112281W WO0180286A3 WO 2001080286 A3 WO2001080286 A3 WO 2001080286A3 US 0112281 W US0112281 W US 0112281W WO 0180286 A3 WO0180286 A3 WO 0180286A3
Authority
WO
WIPO (PCT)
Prior art keywords
separation
laminate
materials
applications
sarcrificial
Prior art date
Application number
PCT/US2001/012281
Other languages
French (fr)
Other versions
WO2001080286A2 (en
Inventor
Stephen J Fonash
Ali Kaan Kalkan
Sanghoon Bae
Dan Hayes
Wook Jun Nam
Kyuhwan Chang
Youngchul Lee
Original Assignee
Penn State Res Found
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/580,105 external-priority patent/US6399177B1/en
Priority claimed from US09/739,940 external-priority patent/US6794196B2/en
Application filed by Penn State Res Found filed Critical Penn State Res Found
Priority to CA002406214A priority Critical patent/CA2406214A1/en
Priority to AU2001261026A priority patent/AU2001261026A1/en
Priority to KR1020027013867A priority patent/KR20020093919A/en
Priority to JP2001577585A priority patent/JP2004507880A/en
Priority to EP01934877A priority patent/EP1280617A4/en
Publication of WO2001080286A2 publication Critical patent/WO2001080286A2/en
Publication of WO2001080286A3 publication Critical patent/WO2001080286A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/008—Manufacture of substrate-free structures separating the processed structure from a mother substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer

Abstract

This invention uses large surface to volume ratio materials for separation, release layer, and sacrificial material applications. The invention outlines the material concept, application designs, and fabrication methodologies. The invention is demonstrated using deposited column/void network materials as examples of large surface to volume ratio materials. In a number of the specific applications discussed, it is shown that it is advantageous to create structures on a laminate on a mother substrate and then, using the separation layer material approach, to separate this laminate from the mother substrate using the present separation scheme. It is also shown that the present materials have excellent release layer utility. In a number of applications it is also shown how the approach can be used to uniquely form cavities, channels, air-gaps, and related structures in or on various substrates. Further, it is demonstrated that it also can be possible and advantageous to combine the schemes for cavity formation with the scheme for laminate separation.
PCT/US2001/012281 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications WO2001080286A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA002406214A CA2406214A1 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications
AU2001261026A AU2001261026A1 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications
KR1020027013867A KR20020093919A (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sacrificial layer applications
JP2001577585A JP2004507880A (en) 2000-04-17 2001-04-17 Deposited thin films and their use in application to separation and sacrificial layers
EP01934877A EP1280617A4 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US19754800P 2000-04-17 2000-04-17
US60/197,548 2000-04-17
US20193700P 2000-05-05 2000-05-05
US60/201,937 2000-05-05
US09/580,105 US6399177B1 (en) 1999-06-03 2000-05-30 Deposited thin film void-column network materials
US09/580,105 2000-05-30
US20819700P 2000-05-31 2000-05-31
US60/208,197 2000-05-31
US21553800P 2000-06-30 2000-06-30
US60/215,538 2000-06-30
US23162600P 2000-09-11 2000-09-11
US60/231,626 2000-09-11
US23579400P 2000-09-27 2000-09-27
US60/235,794 2000-09-27
US09/739,940 US6794196B2 (en) 1999-12-20 2000-12-19 Deposited thin films and their use in detection, attachment and bio-medical applications
US09/739,940 2000-12-19
US26820801P 2001-02-12 2001-02-12
US60/268,208 2001-02-12

Publications (2)

Publication Number Publication Date
WO2001080286A2 WO2001080286A2 (en) 2001-10-25
WO2001080286A3 true WO2001080286A3 (en) 2002-02-07

Family

ID=27578668

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/012281 WO2001080286A2 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications

Country Status (6)

Country Link
EP (1) EP1280617A4 (en)
JP (1) JP2004507880A (en)
CN (1) CN1427749A (en)
AU (1) AU2001261026A1 (en)
CA (1) CA2406214A1 (en)
WO (1) WO2001080286A2 (en)

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US7029781B2 (en) 2003-01-21 2006-04-18 Stmicroelectronics, Inc. Microfuel cell having anodic and cathodic microfluidic channels and related methods
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US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
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Also Published As

Publication number Publication date
EP1280617A2 (en) 2003-02-05
JP2004507880A (en) 2004-03-11
CA2406214A1 (en) 2001-10-25
AU2001261026A1 (en) 2001-10-30
EP1280617A4 (en) 2005-08-03
CN1427749A (en) 2003-07-02
WO2001080286A2 (en) 2001-10-25

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