WO2001033613A3 - Removal of photoresist and residue from substrate using supercritical carbon dioxide process - Google Patents
Removal of photoresist and residue from substrate using supercritical carbon dioxide process Download PDFInfo
- Publication number
- WO2001033613A3 WO2001033613A3 PCT/US2000/030218 US0030218W WO0133613A3 WO 2001033613 A3 WO2001033613 A3 WO 2001033613A3 US 0030218 W US0030218 W US 0030218W WO 0133613 A3 WO0133613 A3 WO 0133613A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- residue
- photoresist
- amine
- carbon dioxide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU14550/01A AU1455001A (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
JP2001535216A JP3771496B2 (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide method |
CA002387334A CA2387334A1 (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
MXPA02004039A MXPA02004039A (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process. |
EP00976830A EP1226603A2 (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
HK03103058A HK1050957A1 (en) | 1999-11-02 | 2003-04-29 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process. |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16312099P | 1999-11-02 | 1999-11-02 | |
US16311699P | 1999-11-02 | 1999-11-02 | |
US60/163,120 | 1999-11-02 | ||
US60/163,116 | 1999-11-02 | ||
US19966100P | 2000-04-25 | 2000-04-25 | |
US60/199,661 | 2000-04-25 | ||
US09/697,227 | 2000-10-25 | ||
US09/697,227 US6500605B1 (en) | 1997-05-27 | 2000-10-25 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001033613A2 WO2001033613A2 (en) | 2001-05-10 |
WO2001033613A3 true WO2001033613A3 (en) | 2002-01-10 |
Family
ID=27496540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/030218 WO2001033613A2 (en) | 1999-11-02 | 2000-11-01 | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
Country Status (10)
Country | Link |
---|---|
US (1) | US6500605B1 (en) |
EP (1) | EP1226603A2 (en) |
JP (1) | JP3771496B2 (en) |
KR (1) | KR100525855B1 (en) |
CN (1) | CN1171288C (en) |
AU (1) | AU1455001A (en) |
CA (1) | CA2387334A1 (en) |
HK (1) | HK1050957A1 (en) |
MX (1) | MXPA02004039A (en) |
WO (1) | WO2001033613A2 (en) |
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- 2000-11-01 CN CNB008150826A patent/CN1171288C/en not_active Expired - Fee Related
- 2000-11-01 EP EP00976830A patent/EP1226603A2/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
HK1050957A1 (en) | 2003-07-11 |
AU1455001A (en) | 2001-05-14 |
KR20020047327A (en) | 2002-06-21 |
CN1384972A (en) | 2002-12-11 |
WO2001033613A2 (en) | 2001-05-10 |
JP2003513342A (en) | 2003-04-08 |
CN1171288C (en) | 2004-10-13 |
MXPA02004039A (en) | 2003-08-20 |
KR100525855B1 (en) | 2005-11-02 |
EP1226603A2 (en) | 2002-07-31 |
US6500605B1 (en) | 2002-12-31 |
JP3771496B2 (en) | 2006-04-26 |
CA2387334A1 (en) | 2001-05-10 |
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