Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0232—Optical elements or arrangements associated with the device
  • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/58—Optical field-shaping elements
  • H01L33/60—Reflective elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
  • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/484—Connecting portions
  • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
  • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01068—Erbium [Er]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01079—Gold [Au]

Definitions

• the invention relates to an optoelectronic component, in particular a surface-mountable optoelectronic component, according to the preamble of claim 1, a method for producing such a component according to the preamble of claim 8 and a method for producing a leadframe (also called lead frame or lead strip) for an optoelectronic component.
• a leadframe also called lead frame or lead strip
• SMT Surface mounting technology
• the component has a preformed housing body in which a central recess is formed. At the bottom of the recess there is an optically active semiconductor element, and the walls of the recess form reflector surfaces. To protect the active element from environmental influences, the recess is cast with a resin.
• pre-housed components Such components, which have a preformed housing body, are also referred to in the art as “pre-housed” components.
• thermomechanical shafts of the component components leadframe, housing body, semiconductor element and casting compound and to coordinate them with one another.
• the reflector is realized by a trough-like shape of a lead frame section.
• the light-emitting element is mounted on the bottom of the trough-like lead frame.
• the component has a preformed housing base body which is molded onto the leadframe before the transmitter and / or receiver chip is mounted.
• LED designs are described in EP 0 400 176 and in DE 4242 842 in which the inner surfaces of a recess in a basic housing body are designed as reflector surfaces.
• JP-10242526 describes an LED design which does not have a lead frame, but rather a conductor track substrate on which the Conductor tracks are separated and the LED chip is mounted on one of these. There is also a reflector ring on the substrate that surrounds the chip.
• the production of such LED designs is associated with increased outlay in comparison with production processes using lead frame strips, as are common in semiconductor technology. Adequate resistance to damaging environmental influences and adequate heat dissipation from the chip are also not readily achievable with such designs.
• the invention has for its object to provide an optoelectronic component, in particular a pre-housed, surface-mountable optoelectronic component of the type mentioned at the outset with good optical radiation characteristics and a long service life.
• pre-housed is to be understood to mean that the leadframe is provided with a basic housing body, preferably overmolded, before the transmitter and / or receiver element is installed.
• This basic housing body is preferably made of plastic.
• the invention aims to provide a method with which an optoelectronic component with the mentioned properties can be achieved.
• the metallic reflector can be manufactured as a separate part and attached to the leadframe by soldering or welding.
• a particularly preferred embodiment of the invention is characterized in that the reflector is designed as an integral reflector section of the lead frame.
• the level of the assembly section is preferably at the level or above the leadframe level.
• this is preferably a circumferential collar produced by shaping, in particular drawing press forming. Due to the closed collar shape in the circumferential direction, a high reflector quality can be achieved.
• Another advantageous measure is characterized in that the outer circumference of the reflector widens with increasing distance from the leadframe plane.
• the resulting undercut increases the anchoring strength of the sealing compound in the housing recess.
• the invention brings significant advantages in the case of component designs in which the casting compound comprises at least two different casting materials. By using different potting materials, mechanical stresses acting on the transmitter / receiver can be reduced and, moreover, the course of the refractive index in the potting compound can be specifically set and / or luminescence converter materials can be introduced into the potting compound in a defined manner.
• a reflector section on a leadframe for an optoelectronic component is particularly preferably produced by means of compression molding as a collar which runs at least partially around the mounting section of the leadframe for the optoelectronic transmitter and / or receiver.
• FIG. 1A and 1B show a pre-housed optoelectronic SMT component in a perspective representation and in a sectional representation according to the prior art
• FIG. 2 shows a perspective illustration of a lead frame with a housing body attached to it according to an exemplary embodiment of the invention
• FIG. 3 shows a schematic longitudinal section through a lead frame in the region of the reflector section
• Fig. 4 shows a first modification of that shown in Fig. 3
• Fig. 5 shows a further modification of the structure shown in Fig. 3.
• FIGS. 1A and 1B show a known SMT component as described in the article by Frank Möllmer et al. is described.
• the component comprises a lead frame 1, to which a housing 2 is molded by injection molding.
• a light-emitting semiconductor chip 4 is mounted on the leadframe 1 in a recess 3 of the housing and is electrically contacted there.
• a potting 5 made of epoxy resin covers the semiconductor chip 4 for protection against environmental influences.
• FIG. 2 shows a perspective view of an as yet unfinished optoelectronic SMT component according to the invention.
• a housing body 12 is anchored to a pre-punched, metallic leadframe frame 10, only a section of which is shown in FIG. 2, by extrusion-coating with a high-temperature-resistant thermoplastic.
• the housing body 12 has a central recess 13.
• a leadframe 11 bordered by longitudinal slots 17, which is formed from a first leadframe tongue 11a and a second leadframe tongue 11b. Ends of the leadframe tongues 11a, 11b pointing towards one another are exposed in the recess 13 and are spaced apart from one another to ensure electrical separation.
• the raised reflector section 15 can be manufactured by a drawing press process.
• the leadframe frame 10 is placed on a base before the housing body 12 is attached and fixed from above by means of a ring sleeve.
• the ring cuff has an annular hole of, for example, cylindrical shape.
• a mandrel with an outer diameter that is reduced compared to the ring hole is brought down centrally on the leadframe tongue 11a.
• the application of pressure causes the leadframe tongue 11a to be displaced in the area below the press mandrel.
• the displaced material escapes into the annular gap between the press mandrel and the annular sleeve and thereby forms the collar-shaped reflector section 15.
• the shape of the reflector section 15 is determined by the design of the press mandrel and the ring sleeve. In order to achieve a reflector with a directed light emission characteristic, the mandrel can have a conical outer shape.
• a light-emitting semiconductor element 14 is inserted into the housing recess 13 in a next step.
• the semiconductor element 14 is fixed on a mounting section (reflector base) 16 of the leadframe tongue 11a which is bordered by the reflector section 15 and is in electrically conductive connection with the latter.
• a bond wire 18 is connected to the upper side of the semiconductor element 14, which at its other end (not shown) is electrically connected to the other leadframe tongue 11b
• the recess 13 is then filled with a transparent, hardenable casting compound 19 which surrounds the semiconductor element 14 in a form-fitting manner.
• the modification shown in FIG. 4 differs from the arrangement shown in FIG. 3 in that the outer circumference of the reflector section 15 'widens with increasing height above the tongue section 11a. Another difference is that two different potting materials 19a and 19b are used for the potting compound 19. The semiconductor element 14 is here surrounded by the potting material 19b, which fills the reflector section 15 '.
• potting materials 19a, 19b By using different potting materials 19a, 19b, better thermomechanical stress relief of the semiconductor element 14 can be achieved, whereby the risk of the semiconductor element 14 becoming detached from the mounting section 16 is further reduced. Furthermore, there is the possibility of generating a refractive index gradient in the light path, o by a better optical adaptation (from the refractive index of the semiconductor element to the refractive index of air).
• one or both potting materials 19a, 19b can also be partially transparent resins which are mixed with suitable luminescence converter materials (possibly different concentrations, distributions, material compositions, etc.).
• FIG. 5 A further modification of the arrangement shown in FIG. 3 is shown in FIG. 5.
• the mounting section 16 ' is designed to be elevated in relation to the plane of the leadframe tongue 11a.
• the leadframe frame 10 is cut along the section lines 20 shown in dash-dotted lines in FIG. 2 and the outer ends of the leadframe tongues 11a, 11b are bent downward around the housing body 12 to form bottom-side contact areas according to FIG. 1B.
• the reflector section (15, 15 ') on the leadframe is particularly preferably by means of extrusion molding as at least partially around the assembly section of the leadframe for the optoelectronic see transmitter and / or receiver manufactured surrounding collar.

Applications Claiming Priority (2)

Publications (1)

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Cited By (8)

Families Citing this family (11)

Citations (8)

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• 1999
  • 1999-09-30 DE DE19947044A patent/DE19947044B9/de not_active Expired - Lifetime
• 2000
  • 2000-09-29 WO PCT/DE2000/003448 patent/WO2001024281A1/de active Application Filing

Patent Citations (8)

Non-Patent Citations (4)

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