WO2000020900A3 - Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method - Google Patents

Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method Download PDF

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Publication number
WO2000020900A3
WO2000020900A3 PCT/US1999/022317 US9922317W WO0020900A3 WO 2000020900 A3 WO2000020900 A3 WO 2000020900A3 US 9922317 W US9922317 W US 9922317W WO 0020900 A3 WO0020900 A3 WO 0020900A3
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WO
WIPO (PCT)
Prior art keywords
silicon carbide
reflective coating
thickness
substrate
silicon
Prior art date
Application number
PCT/US1999/022317
Other languages
French (fr)
Other versions
WO2000020900A2 (en
Inventor
Christopher Bencher
Joe Feng
Mei-Yee Shek
Chris Ngai
Judy Huang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/165,248 external-priority patent/US20030089992A1/en
Priority claimed from US09/219,945 external-priority patent/US6635583B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000574964A priority Critical patent/JP4763131B2/en
Priority to EP99949892A priority patent/EP1118025A2/en
Publication of WO2000020900A2 publication Critical patent/WO2000020900A2/en
Publication of WO2000020900A3 publication Critical patent/WO2000020900A3/en

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S438/952—Utilizing antireflective layer

Abstract

The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier layer and an etch stop, even in complex damascene structures and with high diffusion conductors such as copper as a conductive material. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. A preferred process sequence for forming a silicon carbide anti-reflective coating on a substrate, comprises introducing silicon, carbon, and a noble gas into a reaction zone of a process chamber, initiating a plasma in the reaction zone, reacting the silicon and the carbon in the presence of the plasma to form silicon carbide, and depositing a silicon carbide anti-reflective coating on a substrate in the chamber. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.
PCT/US1999/022317 1998-10-01 1999-09-27 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method WO2000020900A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000574964A JP4763131B2 (en) 1998-10-01 1999-09-27 Silicon carbide deposition for low dielectric constant antireflective coatings
EP99949892A EP1118025A2 (en) 1998-10-01 1999-09-27 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/165,248 1998-10-01
US09/165,248 US20030089992A1 (en) 1998-10-01 1998-10-01 Silicon carbide deposition for use as a barrier layer and an etch stop
US09/219,945 US6635583B2 (en) 1998-10-01 1998-12-23 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
US09/219,945 1998-12-23
US09/270,039 1999-03-16
US09/270,039 US6974766B1 (en) 1998-10-01 1999-03-16 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application

Publications (2)

Publication Number Publication Date
WO2000020900A2 WO2000020900A2 (en) 2000-04-13
WO2000020900A3 true WO2000020900A3 (en) 2000-09-08

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Application Number Title Priority Date Filing Date
PCT/US1999/022317 WO2000020900A2 (en) 1998-10-01 1999-09-27 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method
PCT/US1999/022424 WO2000019498A1 (en) 1998-10-01 1999-09-27 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications
PCT/US1999/022425 WO2000019508A1 (en) 1998-10-01 1999-09-27 Silicon carbide deposition method and use as a barrier layer and passivation layer

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