WO1999007000A3 - Two bit eeprom using asymmetrical charge trapping - Google Patents

Two bit eeprom using asymmetrical charge trapping Download PDF

Info

Publication number
WO1999007000A3
WO1999007000A3 PCT/IL1998/000363 IL9800363W WO9907000A3 WO 1999007000 A3 WO1999007000 A3 WO 1999007000A3 IL 9800363 W IL9800363 W IL 9800363W WO 9907000 A3 WO9907000 A3 WO 9907000A3
Authority
WO
WIPO (PCT)
Prior art keywords
charge trapping
bit
programming
eeprom
silicon dioxide
Prior art date
Application number
PCT/IL1998/000363
Other languages
French (fr)
Other versions
WO1999007000A2 (en
Inventor
Boaz Eitan
Original Assignee
Saifun Semiconductors Ltd
Boaz Eitan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saifun Semiconductors Ltd, Boaz Eitan filed Critical Saifun Semiconductors Ltd
Priority to JP2000505640A priority Critical patent/JP2001512290A/en
Priority to AU85589/98A priority patent/AU8558998A/en
Priority to EP98936654A priority patent/EP1010182A4/en
Priority to IL13430498A priority patent/IL134304A/en
Priority to IL15728998A priority patent/IL157289A0/en
Publication of WO1999007000A2 publication Critical patent/WO1999007000A2/en
Publication of WO1999007000A3 publication Critical patent/WO1999007000A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887Programmable transistors with more than two possible different levels of programmation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401Multistep manufacturing processes
    • H01L29/4011Multistep manufacturing processes for data storage electrodes
    • H01L29/40117Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885Hot carrier injection from the channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923Programmable transistors with more than two possible different levels of programmation

Abstract

A non-volatile electrically erasable programmable read only memory (EEPROM) capable of storing two bitS of information having a nonconducting charge trapping dielectric, such as silicon nitride (20), sandwiched between two silicon dioxide layers (18, 22) acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing the two bit EEPROM device. The noncoducting dielectric layer functions as an electrical charge trapping medium. A conducting gate electrode (24) is placed over the upper silicon dioxide layer (22). A left and right bit are stored in physically different areas of the charge trapping layer, near left and right regions of the memory cell, respectively. Each bit of the memory device is programmed in the conventional manner, using hot electron programming, by applying programming voltages to the gate and to either the left or the right region while the other region is grounded.
PCT/IL1998/000363 1997-08-01 1998-08-02 Two bit eeprom using asymmetrical charge trapping WO1999007000A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000505640A JP2001512290A (en) 1997-08-01 1998-08-02 2-bit non-volatile electrically erasable programmable semiconductor memory cell using asymmetric charge trapping
AU85589/98A AU8558998A (en) 1997-08-01 1998-08-02 Two bit non-volatile electrically erasable and programmable semiconductor memor ycell utilizing asymmetrical charge trapping
EP98936654A EP1010182A4 (en) 1997-08-01 1998-08-02 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
IL13430498A IL134304A (en) 1997-08-01 1998-08-02 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
IL15728998A IL157289A0 (en) 1997-08-01 1998-08-02 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/905,286 1997-08-01
US08/905,286 US6768165B1 (en) 1997-08-01 1997-08-01 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping

Publications (2)

Publication Number Publication Date
WO1999007000A2 WO1999007000A2 (en) 1999-02-11
WO1999007000A3 true WO1999007000A3 (en) 1999-04-08

Family

ID=25420566

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL1998/000363 WO1999007000A2 (en) 1997-08-01 1998-08-02 Two bit eeprom using asymmetrical charge trapping

Country Status (6)

Country Link
US (8) US6768165B1 (en)
EP (1) EP1010182A4 (en)
JP (1) JP2001512290A (en)
AU (1) AU8558998A (en)
IL (1) IL134304A (en)
WO (1) WO1999007000A2 (en)

Families Citing this family (1078)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JPH11214640A (en) * 1998-01-28 1999-08-06 Hitachi Ltd Semiconductor memory element, semiconductor memory and control method thereof
US6215148B1 (en) * 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6348711B1 (en) 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
TW386314B (en) 1998-09-19 2000-04-01 United Microelectronics Corp Structure of low power, high efficiency programmable erasable non-volatile memory cell and production method thereof
IL143478A (en) 1998-12-04 2005-09-25 Fraunhofer Ges Forschung Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
KR100544175B1 (en) * 1999-05-08 2006-01-23 삼성전자주식회사 Recording medium storing linking type information and method for processing defective area
US6208557B1 (en) 1999-05-21 2001-03-27 National Semiconductor Corporation EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
US6388293B1 (en) 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array
US6255166B1 (en) 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
JP3912937B2 (en) * 1999-08-10 2007-05-09 スパンション インク Multi-bit non-volatile memory using non-conductive charge trap gate
WO2001017030A1 (en) * 1999-08-27 2001-03-08 Macronix America, Inc. Non-volatile memory structure for twin-bit storage and methods of making same
DE19941684B4 (en) * 1999-09-01 2004-08-26 Infineon Technologies Ag Semiconductor component as a delay element
JP3958899B2 (en) 1999-09-03 2007-08-15 スパンション エルエルシー Semiconductor memory device and manufacturing method thereof
JP4586219B2 (en) * 1999-09-17 2010-11-24 ソニー株式会社 Erase method for nonvolatile semiconductor memory device
JP2001148434A (en) * 1999-10-12 2001-05-29 New Heiro:Kk Non-volatile memory cell and its usage, manufacturing method, and non-volatile memory array
JP4623782B2 (en) * 1999-10-15 2011-02-02 スパンション エルエルシー Semiconductor memory device and method of using the same
US6331950B1 (en) 1999-10-19 2001-12-18 Fujitsu Limited Write protect input implementation for a simultaneous operation flash memory device
US6175523B1 (en) 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6240020B1 (en) 1999-10-25 2001-05-29 Advanced Micro Devices Method of bitline shielding in conjunction with a precharging scheme for nand-based flash memory devices
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
JP4697993B2 (en) * 1999-11-25 2011-06-08 スパンション エルエルシー Control method for nonvolatile semiconductor memory device
JP4899241B2 (en) * 1999-12-06 2012-03-21 ソニー株式会社 Nonvolatile semiconductor memory device and operation method thereof
DE69936654T2 (en) * 1999-12-09 2007-11-22 Hitachi Europe Ltd., Maidenhead memory array
JP4923318B2 (en) * 1999-12-17 2012-04-25 ソニー株式会社 Nonvolatile semiconductor memory device and operation method thereof
US6329687B1 (en) 2000-01-27 2001-12-11 Advanced Micro Devices, Inc. Two bit flash cell with two floating gate regions
US6272043B1 (en) 2000-01-28 2001-08-07 Advanced Micro Devices, Inc. Apparatus and method of direct current sensing from source side in a virtual ground array
US6201737B1 (en) 2000-01-28 2001-03-13 Advanced Micro Devices, Inc. Apparatus and method to characterize the threshold distribution in an NROM virtual ground array
US6222768B1 (en) 2000-01-28 2001-04-24 Advanced Micro Devices, Inc. Auto adjusting window placement scheme for an NROM virtual ground array
US6172905B1 (en) * 2000-02-01 2001-01-09 Motorola, Inc. Method of operating a semiconductor device
US6355514B1 (en) 2000-02-10 2002-03-12 Advanced Micro Devices, Inc. Dual bit isolation scheme for flash devices
US6243300B1 (en) 2000-02-16 2001-06-05 Advanced Micro Devices, Inc. Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell
US6438031B1 (en) 2000-02-16 2002-08-20 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a substrate bias
US6331952B1 (en) * 2000-02-16 2001-12-18 Advanced Micro Devices, Inc. Positive gate erasure for non-volatile memory cells
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6490205B1 (en) * 2000-02-16 2002-12-03 Advanced Micro Devices, Inc. Method of erasing a non-volatile memory cell using a substrate bias
US6381179B1 (en) * 2000-02-24 2002-04-30 Advanced Micro Devices, Inc. Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure
US6356482B1 (en) * 2000-02-24 2002-03-12 Advanced Micro Devices, Inc. Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure
US6219276B1 (en) 2000-02-25 2001-04-17 Advanced Micro Devices, Inc. Multilevel cell programming
US6297988B1 (en) 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
US6424569B1 (en) 2000-02-25 2002-07-23 Advanced Micro Devices, Inc. User selectable cell programming
US6205055B1 (en) 2000-02-25 2001-03-20 Advanced Micro Devices, Inc. Dynamic memory cell programming voltage
US6384448B1 (en) 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6249460B1 (en) * 2000-02-28 2001-06-19 Micron Technology, Inc. Dynamic flash memory cells with ultrathin tunnel oxides
US6349062B1 (en) * 2000-02-29 2002-02-19 Advanced Micro Devices, Inc. Selective erasure of a non-volatile memory cell of a flash memory device
US6366501B1 (en) 2000-02-29 2002-04-02 Advanced Micro Devices, Inc. Selective erasure of a non-volatile memory cell of a flash memory device
US6639835B2 (en) 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
US6707713B1 (en) 2000-03-01 2004-03-16 Advanced Micro Devices, Inc. Interlaced multi-level memory
US6577531B2 (en) * 2000-04-27 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6928001B2 (en) * 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6456536B1 (en) 2000-06-23 2002-09-24 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a substrate bias
US6618290B1 (en) * 2000-06-23 2003-09-09 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a baking process
US6456531B1 (en) 2000-06-23 2002-09-24 Advanced Micro Devices, Inc. Method of drain avalanche programming of a non-volatile memory cell
TW503528B (en) * 2000-07-12 2002-09-21 Koninkl Philips Electronics Nv Semiconductor device
BR0113164A (en) 2000-08-11 2003-06-24 Infineon Technologies Ag Memory cell, memory cell layout and production process
JP5792918B2 (en) 2000-08-14 2015-10-14 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーSandisk 3D Llc Highly integrated memory device
US6853582B1 (en) * 2000-08-30 2005-02-08 Renesas Technology Corp. Nonvolatile memory with controlled voltage boosting speed
US6477083B1 (en) 2000-10-11 2002-11-05 Advanced Micro Devices, Inc. Select transistor architecture for a virtual ground non-volatile memory cell array
US6750157B1 (en) 2000-10-12 2004-06-15 Advanced Micro Devices, Inc. Nonvolatile memory cell with a nitridated oxide layer
US6583479B1 (en) 2000-10-16 2003-06-24 Advanced Micro Devices, Inc. Sidewall NROM and method of manufacture thereof for non-volatile memory cells
US6538925B2 (en) 2000-11-09 2003-03-25 Innotech Corporation Semiconductor memory device, method of manufacturing the same and method of driving the same
JP2002208274A (en) 2000-11-10 2002-07-26 Hitachi Ltd Semiconductor memory
US6331951B1 (en) * 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
US6465306B1 (en) 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6468865B1 (en) 2000-11-28 2002-10-22 Advanced Micro Devices, Inc. Method of simultaneous formation of bitline isolation and periphery oxide
DE60133259D1 (en) * 2000-12-15 2008-04-30 Halo Lsi Design & Device Tech Fast programming and program verification procedure
US6614692B2 (en) * 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6493261B1 (en) * 2001-01-31 2002-12-10 Advanced Micro Devices, Inc. Single bit array edges
US6344994B1 (en) 2001-01-31 2002-02-05 Advanced Micro Devices Data retention characteristics as a result of high temperature bake
TW476144B (en) * 2001-02-02 2002-02-11 Macronix Int Co Ltd Non-volatile memory
JP2002231918A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
US6556481B1 (en) * 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6487114B2 (en) * 2001-02-28 2002-11-26 Macronix International Co., Ltd. Method of reading two-bit memories of NROM cell
US6456533B1 (en) 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6442074B1 (en) 2001-02-28 2002-08-27 Advanced Micro Devices, Inc. Tailored erase method using higher program VT and higher negative gate erase
US6307784B1 (en) 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6448750B1 (en) 2001-04-05 2002-09-10 Saifun Semiconductor Ltd. Voltage regulator for non-volatile memory with large power supply rejection ration and minimal current drain
US6577514B2 (en) 2001-04-05 2003-06-10 Saifun Semiconductors Ltd. Charge pump with constant boosted output voltage
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6493266B1 (en) 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6936887B2 (en) * 2001-05-18 2005-08-30 Sandisk Corporation Non-volatile memory cells utilizing substrate trenches
KR100629193B1 (en) * 2001-05-25 2006-09-28 후지쯔 가부시끼가이샤 Nonvolatile semiconductor storage device
US6545504B2 (en) 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US6531887B2 (en) 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6577161B2 (en) 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6580120B2 (en) * 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
US6574139B2 (en) * 2001-06-20 2003-06-03 Fujitsu Limited Method and device for reading dual bit memory cells using multiple reference cells with two side read
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
DE10129958B4 (en) 2001-06-21 2006-07-13 Infineon Technologies Ag Memory cell arrangement and manufacturing method
US6512701B1 (en) 2001-06-21 2003-01-28 Advanced Micro Devices, Inc. Erase method for dual bit virtual ground flash
US6436768B1 (en) 2001-06-27 2002-08-20 Advanced Micro Devices, Inc. Source drain implant during ONO formation for improved isolation of SONOS devices
US7253467B2 (en) * 2001-06-28 2007-08-07 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US6858906B2 (en) * 2001-06-28 2005-02-22 Samsung Electronics Co., Ltd. Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers
US8253183B2 (en) 2001-06-28 2012-08-28 Samsung Electronics Co., Ltd. Charge trapping nonvolatile memory devices with a high-K blocking insulation layer
US20060180851A1 (en) * 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
US7473959B2 (en) * 2001-06-28 2009-01-06 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices and methods of fabricating the same
KR100456580B1 (en) * 2001-06-28 2004-11-09 삼성전자주식회사 Floating trap type memory device of non-volatile semiconductor memory device
TWI231938B (en) 2001-07-06 2005-05-01 Halo Lsi Inc Bit line decoding scheme and circuit for dual bit memory with a dual bit selection
TW583673B (en) 2001-07-06 2004-04-11 Halo Lsi Inc A control gate decoder for twin MONOS memory with two bit erase capability
US6631089B1 (en) 2001-07-06 2003-10-07 Halo Lsi, Inc. Bit line decoding scheme and circuit for dual bit memory array
JP4262941B2 (en) 2001-07-06 2009-05-13 ヘイロ エルエスアイ インコーポレイテッド Addressing method and apparatus, storage site reading method and apparatus, programming method and apparatus, and erase method and apparatus in units of cells
JP2003151290A (en) * 2001-07-06 2003-05-23 Halo Lsi Inc Control/gate and boosting circuit of word line voltage
FR2829279B1 (en) * 2001-09-03 2003-12-12 St Microelectronics Sa MEMORY CELL OF FAMOS TYPE WITH MULTIPLE LOGICAL PROGRAMMING LEVELS
US7177197B2 (en) 2001-09-17 2007-02-13 Sandisk Corporation Latched programming of memory and method
US7067875B2 (en) * 2001-09-20 2006-06-27 Renesas Technology Corp. Semiconductor integrated circuit device and its manufacturing method
US6574158B1 (en) 2001-09-27 2003-06-03 Cypress Semiconductor Corp. Method and system for measuring threshold of EPROM cells
US6630384B1 (en) 2001-10-05 2003-10-07 Advanced Micro Devices, Inc. Method of fabricating double densed core gates in sonos flash memory
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6791396B2 (en) * 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
DE10153384B4 (en) * 2001-10-30 2007-08-02 Infineon Technologies Ag Semiconductor memory cell, method for its production and semiconductor memory device
US6925007B2 (en) * 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6897522B2 (en) 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
KR100977592B1 (en) * 2001-10-31 2010-08-23 쌘디스크 코포레이션 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
EP1313149A1 (en) * 2001-11-14 2003-05-21 STMicroelectronics S.r.l. Process for fabricating a dual charge storage location memory cell
JP2003152117A (en) 2001-11-19 2003-05-23 Mitsubishi Electric Corp Nonvolatile semiconductor memory
US7098107B2 (en) * 2001-11-19 2006-08-29 Saifun Semiconductor Ltd. Protective layer in memory device and method therefor
JP3683895B2 (en) 2001-11-21 2005-08-17 シャープ株式会社 Semiconductor memory device and portable electronic device
JP2003157682A (en) 2001-11-26 2003-05-30 Mitsubishi Electric Corp Nonvolatile semiconductor memory
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US7001807B1 (en) 2001-12-20 2006-02-21 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
US6639271B1 (en) * 2001-12-20 2003-10-28 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
JP4596729B2 (en) 2001-12-26 2010-12-15 ルネサスエレクトロニクス株式会社 Semiconductor memory device and write / read control method
KR100426488B1 (en) * 2001-12-29 2004-04-14 주식회사 하이닉스반도체 Flash memory cell and Method of manufacturing the same and programming/erasing/reading
DE10201304A1 (en) * 2002-01-15 2003-07-31 Infineon Technologies Ag Non-volatile semiconductor memory cell and associated manufacturing process
KR20040071322A (en) * 2002-01-16 2004-08-11 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Charge injection
JP2003224213A (en) * 2002-01-30 2003-08-08 Mitsubishi Electric Corp Nonvolatile semiconductor memory
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US20030151077A1 (en) * 2002-02-13 2003-08-14 Leo Mathew Method of forming a vertical double gate semiconductor device and structure thereof
JP2003242789A (en) 2002-02-14 2003-08-29 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JP4156248B2 (en) * 2002-02-18 2008-09-24 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
WO2003071606A1 (en) * 2002-02-21 2003-08-28 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device and its manufacturing method
JP4370104B2 (en) 2002-03-05 2009-11-25 シャープ株式会社 Semiconductor memory device
JP2003273252A (en) * 2002-03-12 2003-09-26 Mitsubishi Electric Corp Semiconductor memory device
US6498377B1 (en) 2002-03-21 2002-12-24 Macronix International, Co., Ltd. SONOS component having high dielectric property
JP2003282743A (en) 2002-03-22 2003-10-03 Nec Electronics Corp Semiconductor device and its manufacturing method
US6690601B2 (en) * 2002-03-29 2004-02-10 Macronix International Co., Ltd. Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same
US6799256B2 (en) 2002-04-12 2004-09-28 Advanced Micro Devices, Inc. System and method for multi-bit flash reads using dual dynamic references
KR100432889B1 (en) * 2002-04-12 2004-05-22 삼성전자주식회사 2 bit programable non-valotile memory device and method of operating and fabricating the same
TWI242215B (en) * 2002-04-16 2005-10-21 Macronix Int Co Ltd Nonvolatile memory cell for prevention from second bit effect
JP2003309194A (en) 2002-04-18 2003-10-31 Nec Electronics Corp Semiconductor storage device and its manufacturing method
JP4647175B2 (en) 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit device
DE60212938D1 (en) 2002-04-30 2006-08-17 St Microelectronics Srl Method for reducing unwanted deletion when programming a nonvolatile NROM
US6914820B1 (en) 2002-05-06 2005-07-05 Multi Level Memory Technology Erasing storage nodes in a bi-directional nonvolatile memory cell
US7221591B1 (en) * 2002-05-06 2007-05-22 Samsung Electronics Co., Ltd. Fabricating bi-directional nonvolatile memory cells
US6747896B2 (en) 2002-05-06 2004-06-08 Multi Level Memory Technology Bi-directional floating gate nonvolatile memory
KR100456596B1 (en) * 2002-05-08 2004-11-09 삼성전자주식회사 Method of erasing floating trap type non-volatile memory device
JP2003346484A (en) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp Nonvolatile semiconductor storage device
JP2003346488A (en) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp Semiconductor storage device
JP2003346489A (en) 2002-05-24 2003-12-05 Mitsubishi Electric Corp Semiconductor storage device
US7042045B2 (en) 2002-06-04 2006-05-09 Samsung Electronics Co., Ltd. Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure
US20030232507A1 (en) * 2002-06-12 2003-12-18 Macronix International Co., Ltd. Method for fabricating a semiconductor device having an ONO film
DE10226964A1 (en) * 2002-06-17 2004-01-08 Infineon Technologies Ag Method for manufacturing an NROM memory cell arrangement
US7193893B2 (en) * 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
EP1530803A2 (en) * 2002-06-21 2005-05-18 Micron Technology, Inc. Nrom memory cell, memory array, related devices an methods
US6996009B2 (en) 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US6853587B2 (en) * 2002-06-21 2005-02-08 Micron Technology, Inc. Vertical NROM having a storage density of 1 bit per 1F2
US6791883B2 (en) 2002-06-24 2004-09-14 Freescale Semiconductor, Inc. Program and erase in a thin film storage non-volatile memory
TW536797B (en) * 2002-06-24 2003-06-11 Macronix Int Co Ltd Multi-bit memory cell and its manufacturing method
DE10229065A1 (en) * 2002-06-28 2004-01-29 Infineon Technologies Ag Method for producing an NROM memory cell array
US6862223B1 (en) * 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
JP2004039965A (en) * 2002-07-05 2004-02-05 Renesas Technology Corp Nonvolatile semiconductor storage device
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7847344B2 (en) * 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
DE10232938B4 (en) * 2002-07-19 2005-05-04 Infineon Technologies Ag Method for producing a buried bit line for a semiconductor memory
US20040017693A1 (en) * 2002-07-23 2004-01-29 Tung-Cheng Kuo Method for programming, reading, and erasing a non-volatile memory with multi-level output currents
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
JP2004071646A (en) 2002-08-01 2004-03-04 Nec Electronics Corp Nonvolatile semiconductor storage device and method of manufacturing and controlling the same
US6864503B2 (en) * 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US6940125B2 (en) * 2002-08-19 2005-09-06 Silicon Storage Technology, Inc. Vertical NROM and methods for making thereof
DE10239491A1 (en) * 2002-08-28 2004-03-18 Infineon Technologies Ag Production of trenched bit lines in a semiconductor memory comprises using a mask which is produced whilst an auxiliary layer is applied on the whole surface and structured using a lacquer mask
US6707078B1 (en) 2002-08-29 2004-03-16 Fasl, Llc Dummy wordline for erase and bitline leakage
US6903969B2 (en) * 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
DE10240916A1 (en) * 2002-09-04 2004-03-25 Infineon Technologies Ag Production of a memory cell field used in charge trapping memory cells, e.g. NROM memory cells comprises forming insulating trenches between trenches whilst a hard mask is applied on or above the upper side of the semiconductor body
DE10240893A1 (en) * 2002-09-04 2004-03-18 Infineon Technologies Ag Production of memory cell, especially NROM memory cells, comprises implanting nitrogen into the walls of a trench before forming electrically insulating layers or producing covered spacers on the walls of the trench
DE10241172B4 (en) * 2002-09-05 2008-01-10 Qimonda Ag Semiconductor memory with vertical memory transistors and method for its production
DE10241173A1 (en) * 2002-09-05 2004-03-11 Infineon Technologies Ag Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells
DE10241170A1 (en) * 2002-09-05 2004-03-18 Infineon Technologies Ag High density NROM FINFET
DE10241171A1 (en) * 2002-09-05 2004-03-18 Infineon Technologies Ag Word and bit line arrangement for a FINFET semiconductor memory
WO2004022581A1 (en) * 2002-09-06 2004-03-18 Genentech, Inc. Process for protein extraction
DE10241990B4 (en) * 2002-09-11 2006-11-09 Infineon Technologies Ag Method for structuring layers on semiconductor devices
US7053449B2 (en) * 2002-09-24 2006-05-30 Intel Corporation Double gate transistor for low power circuits
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
JP4420823B2 (en) 2002-09-24 2010-02-24 サンディスク コーポレイション Nonvolatile memory and method with improved sensing behavior
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US6891753B2 (en) 2002-09-24 2005-05-10 Sandisk Corporation Highly compact non-volatile memory and method therefor with internal serial buses
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6983428B2 (en) 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US6940753B2 (en) 2002-09-24 2005-09-06 Sandisk Corporation Highly compact non-volatile memory and method therefor with space-efficient data registers
JP2004127405A (en) * 2002-10-01 2004-04-22 Renesas Technology Corp Nonvolatile semiconductor memory
JP2004186663A (en) 2002-10-09 2004-07-02 Sharp Corp Semiconductor memory device
US6898129B2 (en) * 2002-10-25 2005-05-24 Freescale Semiconductor, Inc. Erase of a memory having a non-conductive storage medium
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US6876596B1 (en) 2002-11-08 2005-04-05 Halo Lsi, Inc. Decoder circuit with function of plural series bit line selection
US7259984B2 (en) * 2002-11-26 2007-08-21 Cornell Research Foundation, Inc. Multibit metal nanocrystal memories and fabrication
JP2004179387A (en) * 2002-11-27 2004-06-24 Renesas Technology Corp Nonvolatile semiconductor memory and its manufacturing method
JP2004186452A (en) 2002-12-04 2004-07-02 Renesas Technology Corp Nonvolatile semiconductor memory device and its manufacturing method
US7057234B2 (en) * 2002-12-06 2006-06-06 Cornell Research Foundation, Inc. Scalable nano-transistor and memory using back-side trapping
DE10258194B4 (en) * 2002-12-12 2005-11-03 Infineon Technologies Ag Semiconductor memory with charge-trapping memory cells and manufacturing process
JP2004221546A (en) 2002-12-27 2004-08-05 Sharp Corp Semiconductor storage device and mobile electronic apparatus
KR100881201B1 (en) * 2003-01-09 2009-02-05 삼성전자주식회사 Memory device having side gate and method of manufacturing the same
US6912163B2 (en) * 2003-01-14 2005-06-28 Fasl, Llc Memory device having high work function gate and method of erasing same
US6885590B1 (en) * 2003-01-14 2005-04-26 Advanced Micro Devices, Inc. Memory device having A P+ gate and thin bottom oxide and method of erasing same
US7151292B1 (en) * 2003-01-15 2006-12-19 Spansion Llc Dielectric memory cell structure with counter doped channel region
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP2004297028A (en) 2003-02-04 2004-10-21 Sharp Corp Semiconductor memory device
JP2004247436A (en) 2003-02-12 2004-09-02 Sharp Corp Semiconductor memory, display device, and mobile apparatus
KR100505108B1 (en) * 2003-02-12 2005-07-29 삼성전자주식회사 Sonos memory cell and method of fabricating the same
DE10308927A1 (en) * 2003-02-28 2004-09-16 Infineon Technologies Ag Integrated semiconductor circuit with a transistor and with a conductor track
US6815764B2 (en) * 2003-03-17 2004-11-09 Samsung Electronics Co., Ltd. Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
US6806517B2 (en) * 2003-03-17 2004-10-19 Samsung Electronics Co., Ltd. Flash memory having local SONOS structure using notched gate and manufacturing method thereof
US6962851B2 (en) * 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6706599B1 (en) * 2003-03-20 2004-03-16 Motorola, Inc. Multi-bit non-volatile memory device and method therefor
US6975541B2 (en) * 2003-03-24 2005-12-13 Saifun Semiconductors Ltd Alternating application of pulses on two sides of a cell
JP2004348806A (en) 2003-03-26 2004-12-09 Sharp Corp Semiconductor storage device and portable electronic equipment having the same
KR100480645B1 (en) * 2003-04-01 2005-03-31 삼성전자주식회사 Method for manufacturing SONOS memory device with twin-ONO by reverse self-aligning process
US6936883B2 (en) * 2003-04-07 2005-08-30 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
US7190018B2 (en) * 2003-04-07 2007-03-13 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
US6806531B1 (en) 2003-04-07 2004-10-19 Silicon Storage Technology, Inc. Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation
US7183163B2 (en) * 2003-04-07 2007-02-27 Silicon Storage Technology, Inc. Method of manufacturing an isolation-less, contact-less array of bi-directional read/program non-volatile floating gate memory cells with independent controllable control gates
US6956768B2 (en) * 2003-04-15 2005-10-18 Advanced Micro Devices, Inc. Method of programming dual cell memory device to store multiple data states per cell
US7008846B2 (en) * 2003-04-23 2006-03-07 Silicon Storage Technology, Inc. Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing
US6778442B1 (en) * 2003-04-24 2004-08-17 Advanced Micro Devices, Inc. Method of dual cell memory device operation for improved end-of-life read margin
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US6967143B2 (en) * 2003-04-30 2005-11-22 Freescale Semiconductor, Inc. Semiconductor fabrication process with asymmetrical conductive spacers
US6868014B1 (en) * 2003-05-06 2005-03-15 Advanced Micro Devices, Inc. Memory device with reduced operating voltage having dielectric stack
US6754105B1 (en) * 2003-05-06 2004-06-22 Advanced Micro Devices, Inc. Trench side wall charge trapping dielectric flash memory device
JP2004342767A (en) 2003-05-14 2004-12-02 Sharp Corp Semiconductor memory, semiconductor device, and portable electronic equipment
JP4393106B2 (en) 2003-05-14 2010-01-06 シャープ株式会社 Display drive device, display device, and portable electronic device
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
JP2004342927A (en) 2003-05-16 2004-12-02 Sharp Corp Semiconductor memory device and portable electronic equipment
JP2004342889A (en) 2003-05-16 2004-12-02 Sharp Corp Semiconductor memory, semiconductor device, method of manufacturing semiconductor memory, and portable electronic equipment
US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
JP2004342256A (en) 2003-05-16 2004-12-02 Sharp Corp Semiconductor memory device and portable electronic equipment
JP4620334B2 (en) 2003-05-20 2011-01-26 シャープ株式会社 Semiconductor memory device, semiconductor device, portable electronic device including them, and IC card
JP2004342277A (en) 2003-05-19 2004-12-02 Sharp Corp Semiconductor memory device, its driving method, and portable electronic equipment
JP2004348801A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor memory device, method for protecting predetermined memory element, and portable electronic device
JP4480955B2 (en) 2003-05-20 2010-06-16 シャープ株式会社 Semiconductor memory device
JP2004348792A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor memory device, display device and portable electronic equipment
JP2004349355A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor storage device, its redundancy circuit, and portable electronic equipment
JP2004348805A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor memory device
JP2004348817A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor memory device, its page buffer resource allotting method and circuit, computer system, and portable electronic equipment
JP2004348818A (en) 2003-05-20 2004-12-09 Sharp Corp Method and system for controlling writing in semiconductor memory device, and portable electronic device
JP2004349308A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor memory device
JP2004348815A (en) 2003-05-20 2004-12-09 Sharp Corp Driver circuit of semiconductor memory device and portable electronic device
JP2004349334A (en) 2003-05-20 2004-12-09 Sharp Corp Semiconductor storage device and method of improving data retention thereof
US6903967B2 (en) * 2003-05-22 2005-06-07 Freescale Semiconductor, Inc. Memory with charge storage locations and adjacent gate structures
US7192876B2 (en) * 2003-05-22 2007-03-20 Freescale Semiconductor, Inc. Transistor with independent gate structures
DE10324052B4 (en) * 2003-05-27 2007-06-28 Infineon Technologies Ag Method for producing a semiconductor memory with charge trapping memory cells
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
US6862221B1 (en) * 2003-06-11 2005-03-01 Advanced Micro Devices, Inc. Memory device having a thin top dielectric and method of erasing same
US6721204B1 (en) * 2003-06-17 2004-04-13 Macronix International Co., Ltd. Memory erase method and device with optimal data retention for nonvolatile memory
US6847548B2 (en) * 2003-06-20 2005-01-25 Freescale Semiconductor, Inc. Memory with multiple state cells and sensing method
JP2005024665A (en) * 2003-06-30 2005-01-27 Ricoh Co Ltd Powder transport device, image forming apparatus, toner storage part, and process cartridge
US6979857B2 (en) 2003-07-01 2005-12-27 Micron Technology, Inc. Apparatus and method for split gate NROM memory
US7095075B2 (en) * 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US6897518B1 (en) * 2003-07-10 2005-05-24 Advanced Micro Devices, Inc. Flash memory cell having reduced leakage current
JP2005051227A (en) 2003-07-17 2005-02-24 Nec Electronics Corp Semiconductor memory device
US20050012137A1 (en) * 2003-07-18 2005-01-20 Amitay Levi Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
US6898128B2 (en) * 2003-07-18 2005-05-24 Freescale Semiconductor, Inc. Programming of a memory with discrete charge storage elements
US6951782B2 (en) 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US7085170B2 (en) * 2003-08-07 2006-08-01 Micron Technology, Ind. Method for erasing an NROM cell
US6873550B2 (en) * 2003-08-07 2005-03-29 Micron Technology, Inc. Method for programming and erasing an NROM cell
US6861315B1 (en) * 2003-08-14 2005-03-01 Silicon Storage Technology, Inc. Method of manufacturing an array of bi-directional nonvolatile memory cells
US6914819B2 (en) * 2003-09-04 2005-07-05 Macronix International Co., Ltd. Non-volatile flash memory
US6977412B2 (en) * 2003-09-05 2005-12-20 Micron Technology, Inc. Trench corner effect bidirectional flash memory cell
US7123532B2 (en) * 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US6830963B1 (en) 2003-10-09 2004-12-14 Micron Technology, Inc. Fully depleted silicon-on-insulator CMOS logic
US6922099B2 (en) * 2003-10-21 2005-07-26 Saifun Semiconductors Ltd. Class AB voltage regulator
US7184315B2 (en) * 2003-11-04 2007-02-27 Micron Technology, Inc. NROM flash memory with self-aligned structural charge separation
US6831310B1 (en) 2003-11-10 2004-12-14 Freescale Semiconductor, Inc. Integrated circuit having multiple memory types and method of formation
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
US7242050B2 (en) * 2003-11-13 2007-07-10 Silicon Storage Technology, Inc. Stacked gate memory cell with erase to gate, array, and method of manufacturing
US7202523B2 (en) * 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
US7049651B2 (en) * 2003-11-17 2006-05-23 Infineon Technologies Ag Charge-trapping memory device including high permittivity strips
US6808991B1 (en) 2003-11-19 2004-10-26 Macronix International Co., Ltd. Method for forming twin bit cell flash memory
US7269072B2 (en) * 2003-12-16 2007-09-11 Micron Technology, Inc. NROM memory cell, memory array, related devices and methods
US7050330B2 (en) * 2003-12-16 2006-05-23 Micron Technology, Inc. Multi-state NROM device
US7241654B2 (en) * 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US7157769B2 (en) * 2003-12-18 2007-01-02 Micron Technology, Inc. Flash memory having a high-permittivity tunnel dielectric
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
KR20070007265A (en) 2003-12-30 2007-01-15 쌘디스크 코포레이션 Non-volatile memory and method with control data management
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7383375B2 (en) * 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
KR20050069124A (en) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 Sonos device and fabricating method thereof
US7164177B2 (en) * 2004-01-02 2007-01-16 Powerchip Semiconductor Corp. Multi-level memory cell
US7151692B2 (en) * 2004-01-27 2006-12-19 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US6937511B2 (en) * 2004-01-27 2005-08-30 Macronix International Co., Ltd. Circuit and method for programming charge storage memory cells
US6878991B1 (en) * 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7209389B2 (en) * 2004-02-03 2007-04-24 Macronix International Co., Ltd. Trap read only non-volatile memory (TROM)
DE102004006505B4 (en) * 2004-02-10 2006-01-26 Infineon Technologies Ag Charge trapping memory cell and manufacturing process
US6952366B2 (en) 2004-02-10 2005-10-04 Micron Technology, Inc. NROM flash memory cell with integrated DRAM
US7221018B2 (en) * 2004-02-10 2007-05-22 Micron Technology, Inc. NROM flash memory with a high-permittivity gate dielectric
US7585731B2 (en) * 2004-02-20 2009-09-08 Renesas Technology Corp. Semiconductor integrated circuit device and its manufacturing method
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7072217B2 (en) * 2004-02-24 2006-07-04 Micron Technology, Inc. Multi-state memory cell with asymmetric charge trapping
US7054192B2 (en) * 2004-02-26 2006-05-30 Macronix International Co., Ltd. Method of controlling threshold voltage of NROM cell
DE102004010840B4 (en) * 2004-03-05 2006-01-05 Infineon Technologies Ag A method of operating an electrically writable and erasable nonvolatile memory cell and a memory device for electrically nonvolatile memory
US7041545B2 (en) * 2004-03-08 2006-05-09 Infineon Technologies Ag Method for producing semiconductor memory devices and integrated memory device
US20050205969A1 (en) * 2004-03-19 2005-09-22 Sharp Laboratories Of America, Inc. Charge trap non-volatile memory structure for 2 bits per transistor
US7102191B2 (en) 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
US6972226B2 (en) 2004-03-31 2005-12-06 Infineon Technologies Ag Charge-trapping memory cell array and method for production
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
US6963508B1 (en) 2004-04-22 2005-11-08 Fuja Shone Operation method for non-volatile memory
US7057939B2 (en) 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
US7164603B2 (en) * 2004-04-26 2007-01-16 Yen-Hao Shih Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
US7209390B2 (en) * 2004-04-26 2007-04-24 Macronix International Co., Ltd. Operation scheme for spectrum shift in charge trapping non-volatile memory
US7187590B2 (en) * 2004-04-26 2007-03-06 Macronix International Co., Ltd. Method and system for self-convergent erase in charge trapping memory cells
US7313649B2 (en) 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
US7629640B2 (en) * 2004-05-03 2009-12-08 The Regents Of The University Of California Two bit/four bit SONOS flash memory cell
US7274068B2 (en) * 2004-05-06 2007-09-25 Micron Technology, Inc. Ballistic direct injection NROM cell on strained silicon structures
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7133316B2 (en) * 2004-06-02 2006-11-07 Macronix International Co., Ltd. Program/erase method for P-channel charge trapping memory device
US7009887B1 (en) * 2004-06-03 2006-03-07 Fasl Llc Method of determining voltage compensation for flash memory devices
JP4657681B2 (en) 2004-06-03 2011-03-23 シャープ株式会社 Semiconductor memory device, method of manufacturing the same, and portable electronic device
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7190614B2 (en) * 2004-06-17 2007-03-13 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US7018876B2 (en) * 2004-06-18 2006-03-28 Freescale Semiconductor, Inc. Transistor with vertical dielectric structure
US7139200B2 (en) * 2004-06-23 2006-11-21 Macronix International Co., Ltd. Method of identifying logical information in a programming and erasing cell by on-side reading scheme
US7274601B2 (en) * 2004-09-27 2007-09-25 Macronix International Co., Ltd. Programming and erasing method for charge-trapping memory devices
US7329914B2 (en) 2004-07-01 2008-02-12 Macronix International Co., Ltd. Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same
US7387932B2 (en) * 2004-07-06 2008-06-17 Macronix International Co., Ltd. Method for manufacturing a multiple-gate charge trapping non-volatile memory
US7209386B2 (en) * 2004-07-06 2007-04-24 Macronix International Co., Ltd. Charge trapping non-volatile memory and method for gate-by-gate erase for same
US7120059B2 (en) * 2004-07-06 2006-10-10 Macronix International Co., Ltd. Memory array including multiple-gate charge trapping non-volatile cells
US20060007732A1 (en) * 2004-07-06 2006-01-12 Macronix International Co., Ltd. Charge trapping non-volatile memory and method for operating same
US7106625B2 (en) * 2004-07-06 2006-09-12 Macronix International Co, Td Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same
US7179708B2 (en) 2004-07-14 2007-02-20 Chung Yuan Christian University Process for fabricating non-volatile memory by tilt-angle ion implantation
EP1805869A2 (en) 2004-07-19 2007-07-11 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
JP2006032797A (en) * 2004-07-20 2006-02-02 Matsushita Electric Ind Co Ltd Nonvolatile semiconductor storage device and its manufacturing method
US20060021435A1 (en) * 2004-07-27 2006-02-02 Impact Technologies, Llc Sensor for measuring jerk and a method for use thereof
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
KR100634266B1 (en) * 2004-09-02 2006-10-13 삼성전자주식회사 Non-volatile memory device, method of manufacturing the same and method of operating the same
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US7327611B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating charge trapping nonvolatile memory
US7345920B2 (en) * 2004-09-09 2008-03-18 Macronix International Co., Ltd. Method and apparatus for sensing in charge trapping non-volatile memory
US20060068551A1 (en) * 2004-09-27 2006-03-30 Saifun Semiconductors, Ltd. Method for embedding NROM
US7119396B2 (en) * 2004-10-08 2006-10-10 Silicon Storage Technology, Inc. NROM device
US7638850B2 (en) * 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US20060084219A1 (en) * 2004-10-14 2006-04-20 Saifun Semiconductors, Ltd. Advanced NROM structure and method of fabrication
US7238974B2 (en) * 2004-10-29 2007-07-03 Infineon Technologies Ag Semiconductor device and method of producing a semiconductor device
US20060091444A1 (en) * 2004-11-04 2006-05-04 Skymedi Corporation Double word line memory structure and manufacturing method thereof
US7133317B2 (en) * 2004-11-19 2006-11-07 Macronix International Co., Ltd. Method and apparatus for programming nonvolatile memory
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
US20060113586A1 (en) * 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
US20060146624A1 (en) * 2004-12-02 2006-07-06 Saifun Semiconductors, Ltd. Current folding sense amplifier
US7589990B2 (en) * 2004-12-03 2009-09-15 Taiwan Imagingtek Corporation Semiconductor ROM device and manufacturing method thereof
US7026220B1 (en) 2004-12-07 2006-04-11 Infineon Technologies Ag Method for production of charge-trapping memory devices
US7474562B2 (en) * 2004-12-07 2009-01-06 Macronix International Co., Ltd. Method of forming and operating an assisted charge memory device
US7242618B2 (en) 2004-12-09 2007-07-10 Saifun Semiconductors Ltd. Method for reading non-volatile memory cells
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7132337B2 (en) * 2004-12-20 2006-11-07 Infineon Technologies Ag Charge-trapping memory device and method of production
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US20060140007A1 (en) * 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
US7085165B2 (en) * 2004-12-30 2006-08-01 Macronix International Co., Ltd. Method and apparatus for reducing read disturb in non-volatile memory
US7642585B2 (en) * 2005-01-03 2010-01-05 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US20060198189A1 (en) * 2005-01-03 2006-09-07 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7473589B2 (en) * 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
US7709334B2 (en) * 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
US8264028B2 (en) * 2005-01-03 2012-09-11 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
EP1684307A1 (en) * 2005-01-19 2006-07-26 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7315917B2 (en) * 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US7149121B2 (en) * 2005-01-26 2006-12-12 Macronix International Co., Ltd. Method and apparatus for changing operating conditions of nonvolatile memory
US7186607B2 (en) * 2005-02-18 2007-03-06 Infineon Technologies Ag Charge-trapping memory device and method for production
WO2006090441A1 (en) * 2005-02-23 2006-08-31 Spansion Llc Semiconductor device and method for manufacturing same
JP4903687B2 (en) * 2005-02-24 2012-03-28 スパンション エルエルシー Semiconductor device, semiconductor device manufacturing method, and semiconductor device control method
US20060197140A1 (en) * 2005-03-04 2006-09-07 Freescale Semiconductor, Inc. Vertical transistor NVM with body contact structure and method
JP2006252670A (en) 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd Method for driving nonvolatile memory and nonvolatile memory used therefor
US7158416B2 (en) * 2005-03-15 2007-01-02 Infineon Technologies Flash Gmbh & Co. Kg Method for operating a flash memory device
US7251160B2 (en) 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7492001B2 (en) * 2005-03-23 2009-02-17 Spansion Llc High K stack for non-volatile memory
US20060223267A1 (en) * 2005-03-31 2006-10-05 Stefan Machill Method of production of charge-trapping memory devices
KR100644405B1 (en) * 2005-03-31 2006-11-10 삼성전자주식회사 Gate structure of a non-volatile memory device and method of manufacturing the same
JP4896011B2 (en) * 2005-03-31 2012-03-14 スパンション エルエルシー Semiconductor device and control method thereof
JP4916437B2 (en) * 2005-03-31 2012-04-11 スパンション エルエルシー Semiconductor device
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7173854B2 (en) * 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7170784B2 (en) * 2005-04-01 2007-01-30 Sandisk Corporation Non-volatile memory and method with control gate compensation for source line bias errors
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
JP2006287096A (en) 2005-04-04 2006-10-19 Sharp Corp Semiconductor storage device and manufacturing method therefor
US7339826B2 (en) * 2005-04-11 2008-03-04 Saifun Semiconductors Ltd. Threshold voltage shift in NROM cells
KR100680291B1 (en) * 2005-04-22 2007-02-07 한국과학기술원 Non-volatile memory having H-channel double-gate and method of manufacturing thereof and method of operating for multi-bits cell operation
WO2006117853A1 (en) * 2005-04-27 2006-11-09 Spansion Llc Semiconductor device, data read out method and semiconductor device manufacturing method
WO2006117852A1 (en) * 2005-04-27 2006-11-09 Spansion Llc Semiconductor device and method for manufacturing same
WO2006117851A1 (en) 2005-04-27 2006-11-09 Spansion Llc Semiconducteur device and method for manufacturing same
US7158420B2 (en) * 2005-04-29 2007-01-02 Macronix International Co., Ltd. Inversion bit line, charge trapping non-volatile memory and method of operating same
US7272040B2 (en) * 2005-04-29 2007-09-18 Infineon Technologies Ag Multi-bit virtual-ground NAND memory device
US7548477B2 (en) * 2005-05-23 2009-06-16 Infineon Technologies Flash Gmbh & Co. Kg Method and apparatus for adapting circuit components of a memory module to changing operating conditions
US20070141788A1 (en) * 2005-05-25 2007-06-21 Ilan Bloom Method for embedding non-volatile memory with logic circuitry
KR101008371B1 (en) * 2005-05-30 2011-01-19 스펜션 저팬 리미티드 Semiconductor device and method for manufacturing same
US7144776B1 (en) * 2005-05-31 2006-12-05 Infineon Technologies Ag Charge-trapping memory device
US8110863B2 (en) * 2005-06-01 2012-02-07 Sandisk 3D Llc TFT charge storage memory cell having high-mobility corrugated channel
DE102005025167B3 (en) * 2005-06-01 2006-07-13 Infineon Technologies Ag Multi-bit virtual ground NAND-memory unit, has memory cells of two adjacent groups of rows connected in common
US7259993B2 (en) * 2005-06-03 2007-08-21 Infineon Technologies Ag Reference scheme for a non-volatile semiconductor memory device
EP1732080B1 (en) 2005-06-03 2008-09-24 Interuniversitair Microelektronica Centrum Vzw Method for extracting the distribution of charge stored in a semiconductor device
DE602005019864D1 (en) * 2005-06-03 2010-04-22 Imec A method of controlling a nonvolatile charge arrest memory device and methods of determining program / erase parameters
US7190621B2 (en) * 2005-06-03 2007-03-13 Infineon Technologies Ag Sensing scheme for a non-volatile semiconductor memory cell
US7301219B2 (en) * 2005-06-06 2007-11-27 Macronix International Co., Ltd. Electrically erasable programmable read only memory (EEPROM) cell and method for making the same
US7218554B2 (en) * 2005-06-08 2007-05-15 Macronix International Co., Ltd. Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection
US7636257B2 (en) * 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7514367B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Method for manufacturing a narrow structure on an integrated circuit
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7238994B2 (en) * 2005-06-17 2007-07-03 Macronix International Co., Ltd. Thin film plate phase change ram circuit and manufacturing method
US7184313B2 (en) * 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
US7534647B2 (en) 2005-06-17 2009-05-19 Macronix International Co., Ltd. Damascene phase change RAM and manufacturing method
US7321130B2 (en) 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7598512B2 (en) * 2005-06-17 2009-10-06 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation layer and manufacturing method
US8237140B2 (en) * 2005-06-17 2012-08-07 Macronix International Co., Ltd. Self-aligned, embedded phase change RAM
US7283395B2 (en) * 2005-06-24 2007-10-16 Infineon Technologies Flash Gmbh & Co. Kg Memory device and method for operating the memory device
US8148770B1 (en) * 2005-06-24 2012-04-03 Spansion Llc Memory device with buried bit line structure
US7184317B2 (en) * 2005-06-30 2007-02-27 Infineon Technologies Ag Method for programming multi-bit charge-trapping memory cell arrays
US7203096B2 (en) * 2005-06-30 2007-04-10 Infineon Technologies Flash Gmbh & Co. Kg Method and apparatus for sensing a state of a memory cell
US7399673B2 (en) * 2005-07-08 2008-07-15 Infineon Technologies Ag Method of forming a charge-trapping memory device
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
EP1910217A2 (en) * 2005-07-19 2008-04-16 PINKERTON, Joseph P. Heat activated nanometer-scale pump
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US20070018278A1 (en) * 2005-07-25 2007-01-25 Michael Kund Semiconductor memory device
US20070025167A1 (en) * 2005-07-27 2007-02-01 Marco Ziegelmayer Method for testing a memory device, test unit for testing a memory device and memory device
JP2007035179A (en) * 2005-07-28 2007-02-08 Matsushita Electric Ind Co Ltd Nonvolatile semiconductor storage device
US7266014B2 (en) * 2005-08-01 2007-09-04 Macronix International Co., Ltd Method of operating non-volatile memory device
US7763927B2 (en) * 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7576386B2 (en) * 2005-08-04 2009-08-18 Macronix International Co., Ltd. Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
KR100704033B1 (en) * 2005-08-05 2007-04-04 삼성전자주식회사 Chrge trap type nonvolatile semiconductor memory device having three-level memory cells and operating method therefor
US20070036007A1 (en) * 2005-08-09 2007-02-15 Saifun Semiconductors, Ltd. Sticky bit buffer
US7755129B2 (en) * 2005-08-15 2010-07-13 Macronix International Co., Ltd. Systems and methods for memory structure comprising a PPROM and an embedded flash memory
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8330232B2 (en) * 2005-08-22 2012-12-11 Macronix International Co., Ltd. Nonvolatile memory device and method of forming the same
US7352033B2 (en) * 2005-08-30 2008-04-01 Halo Lsi Inc. Twin MONOS array for high speed application
US7936604B2 (en) * 2005-08-30 2011-05-03 Halo Lsi Inc. High speed operation method for twin MONOS metal bit array
US20070045717A1 (en) * 2005-08-31 2007-03-01 Stefano Parascandola Charge-trapping memory device and method of production
US20070048951A1 (en) * 2005-08-31 2007-03-01 Hocine Boubekeur Method for production of semiconductor memory devices
US20080025084A1 (en) * 2005-09-08 2008-01-31 Rustom Irani High aspect ration bitline oxides
US20070096199A1 (en) * 2005-09-08 2007-05-03 Eli Lusky Method of manufacturing symmetric arrays
US20070057318A1 (en) * 2005-09-15 2007-03-15 Lars Bach Semiconductor memory device and method of production
US7295477B2 (en) * 2005-09-16 2007-11-13 Infineon Technologies Flash Gmbh & Co. Kg Semiconductor memory device and method for writing data into the semiconductor memory device
US7881123B2 (en) * 2005-09-23 2011-02-01 Macronix International Co., Ltd. Multi-operation mode nonvolatile memory
US7388252B2 (en) * 2005-09-23 2008-06-17 Macronix International Co., Ltd. Two-bits per cell not-and-gate (NAND) nitride trap memory
US7130221B1 (en) 2005-09-26 2006-10-31 Macronix International Co., Ltd. Dual gate multi-bit semiconductor memory
US7358559B2 (en) * 2005-09-29 2008-04-15 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory array, and method of formation
US7364970B2 (en) * 2005-09-30 2008-04-29 Freescale Semiconductor, Inc. Method of making a multi-bit non-volatile memory (NVM) cell and structure
JP2007103885A (en) * 2005-10-07 2007-04-19 Sharp Corp Semiconductor nonvolatile memory element and method for manufacturing the same
US7411836B2 (en) * 2005-10-11 2008-08-12 Macronix International Co., Ltd. Method of operating non-volatile memory
US7321145B2 (en) * 2005-10-13 2008-01-22 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells with modified band structure
US20070087503A1 (en) * 2005-10-17 2007-04-19 Saifun Semiconductors, Ltd. Improving NROM device characteristics using adjusted gate work function
US7414280B2 (en) * 2005-10-21 2008-08-19 Macronix International Co., Ltd. Systems and methods for memory structure comprising embedded flash memory
US8138540B2 (en) * 2005-10-24 2012-03-20 Macronix International Co., Ltd. Trench type non-volatile memory having three storage locations in one memory cell
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US20070103980A1 (en) * 2005-11-10 2007-05-10 Gert Koebernick Method for operating a semiconductor memory device and semiconductor memory device
US7397060B2 (en) * 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7450411B2 (en) 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7180780B1 (en) * 2005-11-17 2007-02-20 Macronix International Co., Ltd. Multi-level-cell programming methods of non-volatile memories
US20070108495A1 (en) * 2005-11-17 2007-05-17 Macronix International Co., Ltd. MNOS memory devices and methods for operating an MNOS memory devices
CN100524878C (en) * 2005-11-21 2009-08-05 旺宏电子股份有限公司 Programmable resistor material storage array with air insulating unit
US7507986B2 (en) 2005-11-21 2009-03-24 Macronix International Co., Ltd. Thermal isolation for an active-sidewall phase change memory cell
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7739472B2 (en) * 2005-11-22 2010-06-15 Sandisk Corporation Memory system for legacy hosts
US7599217B2 (en) * 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7747927B2 (en) * 2005-11-22 2010-06-29 Sandisk Corporation Method for adapting a memory system to operate with a legacy host originally designed to operate with a different memory system
US20070120180A1 (en) * 2005-11-25 2007-05-31 Boaz Eitan Transition areas for dense memory arrays
US7688619B2 (en) * 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7538384B2 (en) * 2005-12-05 2009-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory array structure
US7605079B2 (en) * 2005-12-05 2009-10-20 Macronix International Co., Ltd. Manufacturing method for phase change RAM with electrode layer process
JP2007158176A (en) * 2005-12-07 2007-06-21 Hitachi Ltd Semiconductor memory device and its manufacturing method
US7269062B2 (en) * 2005-12-09 2007-09-11 Macronix International Co., Ltd. Gated diode nonvolatile memory cell
US7888707B2 (en) * 2005-12-09 2011-02-15 Macronix International Co., Ltd. Gated diode nonvolatile memory process
US7491599B2 (en) * 2005-12-09 2009-02-17 Macronix International Co., Ltd. Gated diode nonvolatile memory process
US7272038B2 (en) * 2005-12-09 2007-09-18 Macronix International Co., Ltd. Method for operating gated diode nonvolatile memory cell
US7283389B2 (en) * 2005-12-09 2007-10-16 Macronix International Co., Ltd. Gated diode nonvolatile memory cell array
US7642539B2 (en) * 2005-12-13 2010-01-05 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation pad and manufacturing method
JP5015008B2 (en) * 2005-12-15 2012-08-29 スパンション エルエルシー Semiconductor device and control method thereof
US20070143561A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US20070143567A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for data alignment in non-volatile memories with a directly mapped file storage system
US20070143378A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with adaptive file handling in a directly mapped file storage system
US20070143566A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with data alignment in a directly mapped file storage system
US20070156998A1 (en) * 2005-12-21 2007-07-05 Gorobets Sergey A Methods for memory allocation in non-volatile memories with a directly mapped file storage system
US7355236B2 (en) * 2005-12-22 2008-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US7310255B2 (en) * 2005-12-29 2007-12-18 Sandisk Corporation Non-volatile memory with improved program-verify operations
US7224614B1 (en) 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7733704B2 (en) 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US8062833B2 (en) 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US7352627B2 (en) * 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7432122B2 (en) * 2006-01-06 2008-10-07 Freescale Semiconductor, Inc. Electronic device and a process for forming the electronic device
US7206227B1 (en) 2006-01-06 2007-04-17 Macronix International Co., Ltd. Architecture for assisted-charge memory array
US7209385B1 (en) * 2006-01-06 2007-04-24 Macronix International Co., Ltd. Array structure for assisted-charge memory devices
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7560337B2 (en) 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
US7595218B2 (en) * 2006-01-09 2009-09-29 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
WO2007080586A2 (en) * 2006-01-10 2007-07-19 Saifun Semiconductors Ltd. Rd algorithm improvement for nrom technology
US7825396B2 (en) * 2006-01-11 2010-11-02 Macronix International Co., Ltd. Self-align planerized bottom electrode phase change memory and manufacturing method
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US20070173017A1 (en) * 2006-01-20 2007-07-26 Saifun Semiconductors, Ltd. Advanced non-volatile memory array and method of fabrication thereof
US7432206B2 (en) * 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7317222B2 (en) * 2006-01-27 2008-01-08 Freescale Semiconductor, Inc. Memory cell using a dielectric having non-uniform thickness
US7456421B2 (en) * 2006-01-30 2008-11-25 Macronix International Co., Ltd. Vertical side wall active pin structures in a phase change memory and manufacturing methods
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
US7973366B2 (en) 2006-02-13 2011-07-05 Macronix International Co., Ltd. Dual-gate, sonos, non-volatile memory cells and arrays thereof
US7709402B2 (en) * 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7902589B2 (en) * 2006-02-17 2011-03-08 Macronix International Co., Ltd. Dual gate multi-bit semiconductor memory array
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US20070212832A1 (en) * 2006-03-08 2007-09-13 Freescale Semiconductor Inc. Method for making a multibit transistor
US7535060B2 (en) * 2006-03-08 2009-05-19 Freescale Semiconductor, Inc. Charge storage structure formation in transistor with vertical channel region
DE102006010979B3 (en) * 2006-03-09 2007-04-12 Infineon Technologies Flash Gmbh & Co. Kg Read voltage adjusting method for e.g. nitride read only memory, involves utilizing adjusted read voltage or read voltage within adjusted voltage range in normal mode of memory to read data from memory cells
US7910907B2 (en) * 2006-03-15 2011-03-22 Macronix International Co., Ltd. Manufacturing method for pipe-shaped electrode phase change memory
US20070255889A1 (en) * 2006-03-22 2007-11-01 Yoav Yogev Non-volatile memory device and method of operating the device
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
KR101347590B1 (en) 2006-03-24 2014-01-07 샌디스크 테크놀로지스, 인코포레이티드 Non-volatile memory and method with redundancy data buffered in remote buffer circuits
US7224605B1 (en) 2006-03-24 2007-05-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in data latches for defective locations
US7324389B2 (en) * 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
KR101363965B1 (en) 2006-03-24 2014-02-18 샌디스크 테크놀로지스, 인코포레이티드 Non-volatile memory and method with redundancy data buffered in data latches for defective locations
US7352635B2 (en) * 2006-03-24 2008-04-01 Sandisk Corporation Method for remote redundancy for non-volatile memory
US7394702B2 (en) 2006-04-05 2008-07-01 Spansion Llc Methods for erasing and programming memory devices
US20070247924A1 (en) * 2006-04-06 2007-10-25 Wei Zheng Methods for erasing memory devices and multi-level programming memory device
US7564718B2 (en) * 2006-04-12 2009-07-21 Infineon Technologies Flash Gmbh & Co. Kg Method for programming a block of memory cells, non-volatile memory device and memory card device
US7554144B2 (en) * 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US7928421B2 (en) 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7391652B2 (en) * 2006-05-05 2008-06-24 Macronix International Co., Ltd. Method of programming and erasing a p-channel BE-SONOS NAND flash memory
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7907450B2 (en) * 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US7608848B2 (en) * 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
US7948799B2 (en) 2006-05-23 2011-05-24 Macronix International Co., Ltd. Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
US7414889B2 (en) * 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
US7423300B2 (en) 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
JP4627743B2 (en) * 2006-05-26 2011-02-09 株式会社ユニバーサルエンターテインメント Entrance / exit management system and entrance / exit management device
US7732800B2 (en) * 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
US7820997B2 (en) * 2006-05-30 2010-10-26 Macronix International Co., Ltd. Resistor random access memory cell with reduced active area and reduced contact areas
US7349254B2 (en) * 2006-05-31 2008-03-25 Qimonda Flash Gmbh & Co. Kg Charge-trapping memory device and methods for its manufacturing and operation
TWI300931B (en) * 2006-06-20 2008-09-11 Macronix Int Co Ltd Method of operating non-volatile memory device
US20070296023A1 (en) * 2006-06-21 2007-12-27 Macronix International Co., Ltd. Charge Monitoring Devices and Methods for Semiconductor Manufacturing
US20070297244A1 (en) * 2006-06-21 2007-12-27 Macronix International Co., Ltd. Top Dielectric Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window
US20080121980A1 (en) * 2006-06-21 2008-05-29 Macronix International Co., Ltd. Bottom Dielectric Structures and High-K Memory Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window
US7512013B2 (en) * 2006-06-21 2009-03-31 Macronix International Co., Ltd Memory structures for expanding a second bit operation window
US7599229B2 (en) * 2006-06-21 2009-10-06 Macronix International Co., Ltd. Methods and structures for expanding a memory operation window and reducing a second bit effect
US7684252B2 (en) * 2006-06-21 2010-03-23 Macronix International Co., Ltd. Method and structure for operating memory devices on fringes of control gate
US7471568B2 (en) 2006-06-21 2008-12-30 Macronix International Co., Ltd. Multi-level cell memory structures with enlarged second bit operation window
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
KR100803674B1 (en) * 2006-06-28 2008-02-20 삼성전자주식회사 Nor flash memory device and method for manufacturing the same
US20080123435A1 (en) * 2006-07-10 2008-05-29 Macronix International Co., Ltd. Operation of Nonvolatile Memory Having Modified Channel Region Interface
US7746694B2 (en) * 2006-07-10 2010-06-29 Macronix International Co., Ltd. Nonvolatile memory array having modified channel region interface
US7785920B2 (en) * 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
JP2008027938A (en) 2006-07-18 2008-02-07 Oki Electric Ind Co Ltd Nonvolatile memory
US7457144B2 (en) * 2006-07-19 2008-11-25 Qimonda Flash Gmbh & Co. Kg Memory device and method for verifying information stored in memory cells
US7656704B2 (en) * 2006-07-20 2010-02-02 Winbond Electronics Corp. Multi-level operation in nitride storage memory cell
US20080023699A1 (en) * 2006-07-26 2008-01-31 Macronix International Co., Ltd. A test structure and method for detecting charge effects during semiconductor processing
US20080031052A1 (en) * 2006-08-01 2008-02-07 Macronix International Co., Ltd. A double-bias erase method for memory devices
US7596030B2 (en) * 2006-08-01 2009-09-29 Macronix International Co., Ltd. Method for improving memory device cycling endurance by providing additional pulse
US7483299B2 (en) * 2006-08-01 2009-01-27 Macronix International Co., Ltd. Devices and operation methods for reducing second bit effect in memory device
US7442603B2 (en) * 2006-08-16 2008-10-28 Macronix International Co., Ltd. Self-aligned structure and method for confining a melting point in a resistor random access memory
KR100807221B1 (en) * 2006-08-22 2008-02-28 삼성전자주식회사 Non-volatile memory device and Method of manufacturing the same
US7772068B2 (en) 2006-08-30 2010-08-10 Macronix International Co., Ltd. Method of manufacturing non-volatile memory
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7466589B2 (en) * 2006-09-08 2008-12-16 Macronix International Co., Ltd. NAND memory cell at initializing state and initializing process for NAND memory cell
US7606966B2 (en) * 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7772581B2 (en) * 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
US7453731B2 (en) * 2006-09-12 2008-11-18 Sandisk Corporation Method for non-volatile memory with linear estimation of initial programming voltage
US8264884B2 (en) * 2006-09-12 2012-09-11 Spansion Israel Ltd Methods, circuits and systems for reading non-volatile memory cells
US7606077B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
JP4950296B2 (en) 2006-09-12 2012-06-13 サンディスク コーポレイション Nonvolatile memory and method for reducing erase / write cycles during trimming of initial programming voltage
US7606091B2 (en) * 2006-09-12 2009-10-20 Sandisk Corporation Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage
JP4819951B2 (en) 2006-09-12 2011-11-24 サンディスク コーポレイション Nonvolatile memory and method for linear estimation of initial programming voltage
US7599223B2 (en) * 2006-09-12 2009-10-06 Sandisk Corporation Non-volatile memory with linear estimation of initial programming voltage
US7779056B2 (en) * 2006-09-15 2010-08-17 Sandisk Corporation Managing a pool of update memory blocks based on each block's activity and data order
US7774392B2 (en) * 2006-09-15 2010-08-10 Sandisk Corporation Non-volatile memory with management of a pool of update memory blocks based on each block's activity and data order
US7605579B2 (en) * 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
KR100814376B1 (en) * 2006-09-19 2008-03-18 삼성전자주식회사 Non-volatile memory device and method of manufacturing the same
US7881121B2 (en) * 2006-09-25 2011-02-01 Macronix International Co., Ltd. Decoding method in an NROM flash memory array
US7508694B2 (en) * 2006-09-27 2009-03-24 Novelics, Llc One-time-programmable memory
US7504653B2 (en) * 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7811890B2 (en) * 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US8772858B2 (en) * 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US7558907B2 (en) * 2006-10-13 2009-07-07 Spansion Llc Virtual memory card controller
US8125019B2 (en) * 2006-10-18 2012-02-28 International Business Machines Corporation Electrically programmable resistor
US7510929B2 (en) * 2006-10-18 2009-03-31 Macronix International Co., Ltd. Method for making memory cell device
US7863655B2 (en) * 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7388771B2 (en) 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
US7527985B2 (en) 2006-10-24 2009-05-05 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas
US20080094885A1 (en) * 2006-10-24 2008-04-24 Macronix International Co., Ltd. Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States
US8022466B2 (en) * 2006-10-27 2011-09-20 Macronix International Co., Ltd. Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same
US7851848B2 (en) 2006-11-01 2010-12-14 Macronix International Co., Ltd. Cylindrical channel charge trapping devices with effectively high coupling ratios
US20080111182A1 (en) * 2006-11-02 2008-05-15 Rustom Irani Forming buried contact etch stop layer (CESL) in semiconductor devices self-aligned to diffusion
US7811887B2 (en) * 2006-11-02 2010-10-12 Saifun Semiconductors Ltd. Forming silicon trench isolation (STI) in semiconductor devices self-aligned to diffusion
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US7916550B2 (en) * 2006-11-17 2011-03-29 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory with floating voltage at one of the source and drain regions
US8101989B2 (en) 2006-11-20 2012-01-24 Macronix International Co., Ltd. Charge trapping devices with field distribution layer over tunneling barrier
US7473576B2 (en) * 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US7476587B2 (en) * 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7682868B2 (en) 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US20080137400A1 (en) * 2006-12-06 2008-06-12 Macronix International Co., Ltd. Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same
US7697316B2 (en) * 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US7474565B2 (en) * 2006-12-11 2009-01-06 Macronix International Co., Ltd. Programming scheme for non-volatile flash memory
US7903447B2 (en) * 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
JP2008153377A (en) 2006-12-15 2008-07-03 Nec Electronics Corp Non-volatile semiconductor memory and operation method thereof
US7561470B2 (en) * 2006-12-21 2009-07-14 Macronix International Co., Ltd. Double-side-bias methods of programming and erasing a virtual ground array memory
US7718989B2 (en) * 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
JP2008166528A (en) * 2006-12-28 2008-07-17 Spansion Llc Semiconductor device and its manufacturing method
US7450423B2 (en) * 2007-01-03 2008-11-11 Macronix International Co., Ltd. Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
US7554851B2 (en) * 2007-01-05 2009-06-30 Macronix International Co., Ltd. Reset method of non-volatile memory
US7672159B2 (en) * 2007-01-05 2010-03-02 Macronix International Co., Ltd. Method of operating multi-level cell
US7515461B2 (en) * 2007-01-05 2009-04-07 Macronix International Co., Ltd. Current compliant sensing architecture for multilevel phase change memory
US7440315B2 (en) 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7433226B2 (en) * 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7619919B2 (en) * 2007-01-12 2009-11-17 Marvell World Trade Ltd. Multi-level memory
US7570514B2 (en) * 2007-01-22 2009-08-04 Macronix International Co. Ltd. Method of operating multi-level cell and integrate circuit for using multi-level cell to store data
US7489563B2 (en) * 2007-01-30 2009-02-10 Qimonda Flash Gmbh & Co. Kg Memory device with adaptive sense unit and method of reading a cell array
US7535756B2 (en) 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7397705B1 (en) 2007-02-01 2008-07-08 Macronix International Co., Ltd. Method for programming multi-level cell memory array
US7619311B2 (en) * 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
US8223540B2 (en) * 2007-02-02 2012-07-17 Macronix International Co., Ltd. Method and apparatus for double-sided biasing of nonvolatile memory
US7701759B2 (en) * 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
JP2008192803A (en) * 2007-02-05 2008-08-21 Spansion Llc Semiconductor device and manufacturing method therefor
US7483292B2 (en) * 2007-02-07 2009-01-27 Macronix International Co., Ltd. Memory cell with separate read and program paths
US7463512B2 (en) * 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8138028B2 (en) * 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US20080192544A1 (en) * 2007-02-13 2008-08-14 Amit Berman Error correction coding techniques for non-volatile memory
US7884343B2 (en) * 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7619237B2 (en) * 2007-02-21 2009-11-17 Macronix International Co., Ltd. Programmable resistive memory cell with self-forming gap
US8008643B2 (en) * 2007-02-21 2011-08-30 Macronix International Co., Ltd. Phase change memory cell with heater and method for fabricating the same
US20080205140A1 (en) * 2007-02-26 2008-08-28 Aplus Flash Technology, Inc. Bit line structure for a multilevel, dual-sided nonvolatile memory cell array
US7956344B2 (en) * 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7499320B2 (en) * 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
US20080217679A1 (en) * 2007-03-08 2008-09-11 Macronix International Co., Ltd. Memory unit structure and operation method thereof
US7830713B2 (en) * 2007-03-14 2010-11-09 Aplus Flash Technology, Inc. Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array
US7541639B2 (en) 2007-03-15 2009-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and method of fabricating the same
US7508713B2 (en) * 2007-03-29 2009-03-24 Sandisk Corporation Method of compensating variations along a word line in a non-volatile memory
US7577031B2 (en) * 2007-03-29 2009-08-18 Sandisk Corporation Non-volatile memory with compensation for variations along a word line
US20080239599A1 (en) * 2007-04-01 2008-10-02 Yehuda Yizraeli Clamping Voltage Events Such As ESD
US7786461B2 (en) * 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US7839028B2 (en) * 2007-04-03 2010-11-23 CJP IP Holding, Ltd. Nanoelectromechanical systems and methods for making the same
US8610098B2 (en) * 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7551483B2 (en) * 2007-04-10 2009-06-23 Sandisk Corporation Non-volatile memory with predictive programming
US8258029B2 (en) * 2007-04-10 2012-09-04 Macronix International Co., Ltd. Semiconductor structure and process for reducing the second bit effect of a memory device
US7643348B2 (en) 2007-04-10 2010-01-05 Sandisk Corporation Predictive programming in non-volatile memory
US7569844B2 (en) 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode
US7755076B2 (en) * 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US20080258204A1 (en) * 2007-04-20 2008-10-23 Macronix International Co., Ltd. Memory structure and operating method thereof
US7483316B2 (en) * 2007-04-24 2009-01-27 Macronix International Co., Ltd. Method and apparatus for refreshing programmable resistive memory
US7492636B2 (en) * 2007-04-27 2009-02-17 Macronix International Co., Ltd. Methods for conducting double-side-biasing operations of NAND memory arrays
US7548458B2 (en) 2007-04-27 2009-06-16 Macronix International Co., Ltd. Methods of biasing a multi-level-cell memory
US7486567B2 (en) * 2007-04-30 2009-02-03 Macronix International Co., Ltd Method for high speed programming of a charge trapping memory with an enhanced charge trapping site
US7512012B2 (en) * 2007-04-30 2009-03-31 Macronix International Co., Ltd. Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory
US7492640B2 (en) 2007-06-07 2009-02-17 Sandisk Corporation Sensing with bit-line lockout control in non-volatile memory
US7489553B2 (en) * 2007-06-07 2009-02-10 Sandisk Corporation Non-volatile memory with improved sensing having bit-line lockout control
US7749838B2 (en) * 2007-07-06 2010-07-06 Macronix International Co., Ltd. Fabricating method of non-volatile memory cell
US8513637B2 (en) * 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
KR101338158B1 (en) * 2007-07-16 2013-12-06 삼성전자주식회사 Non-volatile memory devices and methods of forming the same
US7777215B2 (en) * 2007-07-20 2010-08-17 Macronix International Co., Ltd. Resistive memory structure with buffer layer
WO2009017871A1 (en) * 2007-07-27 2009-02-05 Rambus Inc. Non-volatile memory device with reduced write-erase cycle time
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) * 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) * 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US20090039414A1 (en) * 2007-08-09 2009-02-12 Macronix International Co., Ltd. Charge trapping memory cell with high speed erase
US7838923B2 (en) * 2007-08-09 2010-11-23 Macronix International Co., Ltd. Lateral pocket implant charge trapping devices
US7816727B2 (en) * 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
US7981745B2 (en) * 2007-08-30 2011-07-19 Spansion Llc Sacrificial nitride and gate replacement
US20090065841A1 (en) * 2007-09-06 2009-03-12 Assaf Shappir SILICON OXY-NITRIDE (SiON) LINER, SUCH AS OPTIONALLY FOR NON-VOLATILE MEMORY CELLS
US7642125B2 (en) * 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) * 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US8098525B2 (en) * 2007-09-17 2012-01-17 Spansion Israel Ltd Pre-charge sensing scheme for non-volatile memory (NVM)
US7864588B2 (en) * 2007-09-17 2011-01-04 Spansion Israel Ltd. Minimizing read disturb in an array flash cell
US7969785B1 (en) 2007-09-20 2011-06-28 Venkatraman Prabhakar Low voltage non-volatile memory with charge trapping layer
US7787303B2 (en) * 2007-09-20 2010-08-31 Cypress Semiconductor Corporation Programmable CSONOS logic element
US7760547B2 (en) * 2007-09-25 2010-07-20 Sandisk Corporation Offset non-volatile storage
US7551473B2 (en) * 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7643349B2 (en) * 2007-10-18 2010-01-05 Macronix International Co., Ltd. Efficient erase algorithm for SONOS-type NAND flash
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
WO2009053779A1 (en) * 2007-10-23 2009-04-30 Freescale Semiconductor, Inc. Method for manufacturing a non-volatile memory, nonvolatile memory device, and an integrated circuit
US20090109755A1 (en) * 2007-10-24 2009-04-30 Mori Edan Neighbor block refresh for non-volatile memory
US8339865B2 (en) * 2007-11-01 2012-12-25 Spansion Israel Ltd Non binary flash array architecture and method of operation
US8120960B2 (en) * 2007-11-07 2012-02-21 Spansion Israel Ltd. Method and apparatus for accessing a non-volatile memory array comprising unidirectional current flowing multiplexers
US7804083B2 (en) * 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7924628B2 (en) * 2007-11-14 2011-04-12 Spansion Israel Ltd Operation of a non-volatile memory array
US7945825B2 (en) * 2007-11-25 2011-05-17 Spansion Isreal, Ltd Recovery while programming non-volatile memory (NVM)
US7646631B2 (en) * 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7764547B2 (en) * 2007-12-20 2010-07-27 Sandisk Corporation Regulation of source potential to combat cell source IR drop
US7701761B2 (en) * 2007-12-20 2010-04-20 Sandisk Corporation Read, verify word line reference voltage to track source level
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US8189397B2 (en) * 2008-01-08 2012-05-29 Spansion Israel Ltd Retention in NVM with top or bottom injection
US20090186212A1 (en) * 2008-01-17 2009-07-23 Macronix International Co., Ltd. Non-volatile memory and methods for fabricating the same
US7813169B2 (en) * 2008-01-18 2010-10-12 Qimonda Flash Gmbh Integrated circuit and method to operate an integrated circuit
US7879643B2 (en) * 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7852680B2 (en) * 2008-01-22 2010-12-14 Macronix International Co., Ltd. Operating method of multi-level memory cell
US7808833B2 (en) * 2008-01-28 2010-10-05 Qimonda Flash Gmbh Method of operating an integrated circuit, integrated circuit and method to determine an operating point
US7879645B2 (en) * 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8710576B2 (en) 2008-02-12 2014-04-29 Halo Lsi Inc. High density vertical structure nitride flash memory
US7787294B2 (en) * 2008-02-14 2010-08-31 Macronix International Co., Ltd. Operating method of memory
US8493783B2 (en) * 2008-03-18 2013-07-23 Apple Inc. Memory device readout using multiple sense times
US8084842B2 (en) * 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US8014200B2 (en) 2008-04-08 2011-09-06 Zeno Semiconductor, Inc. Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
US8068370B2 (en) * 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US7791057B2 (en) * 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) * 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US7786463B2 (en) * 2008-05-20 2010-08-31 Seagate Technology Llc Non-volatile multi-bit memory with programmable capacitance
US7977722B2 (en) * 2008-05-20 2011-07-12 Seagate Technology Llc Non-volatile memory with programmable capacitance
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US7796435B2 (en) * 2008-06-12 2010-09-14 Sandisk Corporation Method for correlated multiple pass programming in nonvolatile memory
US8415651B2 (en) * 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US7800945B2 (en) * 2008-06-12 2010-09-21 Sandisk Corporation Method for index programming and reduced verify in nonvolatile memory
US7813172B2 (en) * 2008-06-12 2010-10-12 Sandisk Corporation Nonvolatile memory with correlated multiple pass programming
US7826271B2 (en) * 2008-06-12 2010-11-02 Sandisk Corporation Nonvolatile memory with index programming and reduced verify
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
KR101498873B1 (en) * 2008-07-08 2015-03-04 삼성전자주식회사 Method for operating an memory device having characters of DRAM and Non-volatile memory
US20100019215A1 (en) * 2008-07-22 2010-01-28 Macronix International Co., Ltd. Mushroom type memory cell having self-aligned bottom electrode and diode access device
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US20100020599A1 (en) * 2008-07-23 2010-01-28 Promos Technologies Inc. Multi-level flash memory
US20100019309A1 (en) * 2008-07-23 2010-01-28 Promos Technologies Inc. Multi-level flash memory structure
US20100041192A1 (en) * 2008-08-12 2010-02-18 Promos Technologies Inc. Method For Preparing Multi-Level Flash Memory Structure
US20100022058A1 (en) * 2008-07-23 2010-01-28 Promos Technologies Inc. Method for preparing multi-level flash memory
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
US7903457B2 (en) * 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7715235B2 (en) * 2008-08-25 2010-05-11 Sandisk Corporation Non-volatile memory and method for ramp-down programming
US20100062593A1 (en) * 2008-09-10 2010-03-11 Promos Technologies Inc. Method for preparing multi-level flash memory devices
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
US7719913B2 (en) * 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US7986564B2 (en) * 2008-09-19 2011-07-26 Macronix International Co., Ltd. High second bit operation window method for virtual ground array with two-bit memory cells
US8324605B2 (en) * 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7768836B2 (en) * 2008-10-10 2010-08-03 Sandisk Corporation Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8254177B2 (en) 2008-10-24 2012-08-28 Sandisk Technologies Inc. Programming non-volatile memory with variable initial programming pulse
US8274824B1 (en) 2008-10-29 2012-09-25 National Semiconductor Corporation High-performance CMOS-compatible non-volatile memory cell and related method
US8036014B2 (en) * 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8907316B2 (en) * 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US7813181B2 (en) 2008-12-31 2010-10-12 Sandisk Corporation Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
US7944754B2 (en) * 2008-12-31 2011-05-17 Sandisk Corporation Non-volatile memory and method with continuous scanning time-domain sensing
US8081516B2 (en) * 2009-01-02 2011-12-20 Macronix International Co., Ltd. Method and apparatus to suppress fringing field interference of charge trapping NAND memory
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
EP2374063B1 (en) 2009-01-05 2017-11-22 SanDisk Technologies LLC Non-volatile memory and method with write cache partitioning
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
KR20100081128A (en) * 2009-01-05 2010-07-14 삼성전자주식회사 Reduction method of threshold voltage distribution
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8089137B2 (en) * 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) * 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) * 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) * 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
TWI401688B (en) * 2009-03-31 2013-07-11 Macronix Int Co Ltd Memory apparatus and method thereof for operating memory
US7869283B2 (en) * 2009-04-17 2011-01-11 Windbond Electronics Corp. Method for determining native threshold voltage of nonvolatile memory
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8861273B2 (en) * 2009-04-21 2014-10-14 Macronix International Co., Ltd. Bandgap engineered charge trapping memory in two-transistor nor architecture
US8173987B2 (en) * 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) * 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) * 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US7968876B2 (en) * 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US20100318720A1 (en) 2009-06-16 2010-12-16 Saranyan Rajagopalan Multi-Bank Non-Volatile Memory System with Satellite File System
US8406033B2 (en) * 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US7974124B2 (en) * 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US8238149B2 (en) * 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8363463B2 (en) * 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8054691B2 (en) 2009-06-26 2011-11-08 Sandisk Technologies Inc. Detecting the completion of programming for non-volatile storage
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8198619B2 (en) * 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8110822B2 (en) * 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US20110049456A1 (en) * 2009-09-03 2011-03-03 Macronix International Co., Ltd. Phase change structure with composite doping for phase change memory
US8400854B2 (en) 2009-09-11 2013-03-19 Sandisk Technologies Inc. Identifying at-risk data in non-volatile storage
US8064248B2 (en) * 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) * 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8214700B2 (en) * 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8423866B2 (en) 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8174895B2 (en) 2009-12-15 2012-05-08 Sandisk Technologies Inc. Programming non-volatile storage with fast bit detection and verify skip
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US20110153912A1 (en) 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8054684B2 (en) 2009-12-18 2011-11-08 Sandisk Technologies Inc. Non-volatile memory and method with atomic program sequence and write abort detection
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
CN102117778B (en) * 2010-01-05 2013-03-13 上海华虹Nec电子有限公司 Method for improving reliability of SONOS memory by utilizing ozone oxidation
TWI451420B (en) 2010-01-20 2014-09-01 Macronix Int Co Ltd Memory program discharge circuit and method thereof
US8213255B2 (en) 2010-02-19 2012-07-03 Sandisk Technologies Inc. Non-volatile storage with temperature compensation based on neighbor state information
US8218366B2 (en) 2010-04-18 2012-07-10 Sandisk Technologies Inc. Programming non-volatile storage including reducing impact from other memory cells
US8427874B2 (en) 2010-04-30 2013-04-23 SanDisk Technologies, Inc. Non-volatile memory and method with even/odd combined block decoding
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8274831B2 (en) 2010-05-24 2012-09-25 Sandisk Technologies Inc. Programming non-volatile storage with synchronized coupling
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8543757B2 (en) 2010-06-23 2013-09-24 Sandisk Technologies Inc. Techniques of maintaining logical to physical mapping information in non-volatile memory systems
US8417876B2 (en) 2010-06-23 2013-04-09 Sandisk Technologies Inc. Use of guard bands and phased maintenance operations to avoid exceeding maximum latency requirements in non-volatile memory systems
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
WO2012009318A1 (en) 2010-07-13 2012-01-19 Sandisk Technologies Inc. Dynamic optimization of back-end memory system interface
US8464135B2 (en) 2010-07-13 2013-06-11 Sandisk Technologies Inc. Adaptive flash interface
US9069688B2 (en) 2011-04-15 2015-06-30 Sandisk Technologies Inc. Dynamic optimization of back-end memory system interface
US8471328B2 (en) 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8498152B2 (en) 2010-12-23 2013-07-30 Sandisk Il Ltd. Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
US8099652B1 (en) 2010-12-23 2012-01-17 Sandisk Corporation Non-volatile memory and methods with reading soft bits in non uniform schemes
US8782495B2 (en) 2010-12-23 2014-07-15 Sandisk Il Ltd Non-volatile memory and methods with asymmetric soft read points around hard read points
US8472257B2 (en) 2011-03-24 2013-06-25 Sandisk Technologies Inc. Nonvolatile memory and method for improved programming with reduced verify
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8334796B2 (en) 2011-04-08 2012-12-18 Sandisk Technologies Inc. Hardware efficient on-chip digital temperature coefficient voltage generator and method
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
US8713380B2 (en) 2011-05-03 2014-04-29 SanDisk Technologies, Inc. Non-volatile memory and method having efficient on-chip block-copying with controlled error rate
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8772059B2 (en) 2011-05-13 2014-07-08 Cypress Semiconductor Corporation Inline method to monitor ONO stack quality
US8772057B1 (en) 2011-05-13 2014-07-08 Cypress Semiconductor Corporation Inline method to monitor ONO stack quality
US9141528B2 (en) 2011-05-17 2015-09-22 Sandisk Technologies Inc. Tracking and handling of super-hot data in non-volatile memory systems
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
KR20140040137A (en) 2011-05-17 2014-04-02 샌디스크 테크놀로지스, 인코포레이티드 Non-volatile memory and method with small logical groups distributed among active slc and mlc memory partitions
US9176864B2 (en) 2011-05-17 2015-11-03 SanDisk Technologies, Inc. Non-volatile memory and method having block management with hot/cold data sorting
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US8427884B2 (en) 2011-06-20 2013-04-23 SanDisk Technologies, Inc. Bit scan circuits and method in non-volatile memory
US8432740B2 (en) 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
WO2013043602A2 (en) 2011-09-19 2013-03-28 SanDisk Technologies, Inc. High endurance non-volatile storage
WO2013058960A2 (en) 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
US8593866B2 (en) 2011-11-11 2013-11-26 Sandisk Technologies Inc. Systems and methods for operating multi-bank nonvolatile memory
EP2780912B1 (en) 2011-11-18 2016-10-26 SanDisk Technologies LLC Non-volatile storage with data recovery
CN102436849B (en) * 2011-12-02 2015-03-11 南京大学 Operation method for realizing multiple-valued/multibit storage of partial capture-type flash memory
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8811091B2 (en) 2011-12-16 2014-08-19 SanDisk Technologies, Inc. Non-volatile memory and method with improved first pass programming
US8811075B2 (en) 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
US8913445B2 (en) 2012-02-13 2014-12-16 Macronix International Co., Ltd. Method and apparatus for adjusting drain bias of a memory cell with addressed and neighbor bits
US9396770B2 (en) 2012-02-13 2016-07-19 Macronix International Co., Ltd. Method and apparatus for adjusting drain bias of a memory cell with addressed and neighbor bits
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US10054562B2 (en) 2012-02-28 2018-08-21 Ramot At Tel-Aviv University Ltd. Molecular sensor based on virtual buried nanowire
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8937835B2 (en) 2012-03-13 2015-01-20 Sandisk Technologies Inc. Non-volatile storage with read process that reduces disturb
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8897085B2 (en) 2012-03-19 2014-11-25 Sandisk Technologies Inc. Immunity against temporary and short power drops in non-volatile memory: pausing techniques
TWI473094B (en) * 2012-03-21 2015-02-11 Macronix Int Co Ltd Method and apparatus for adjusting drain bias of a memory cell with addressed and neighbor bits
WO2013148090A2 (en) * 2012-03-26 2013-10-03 Cypress Semiconductor Corporation Inline method to monitor ono stack quality
US8760957B2 (en) 2012-03-27 2014-06-24 SanDisk Technologies, Inc. Non-volatile memory and method having a memory array with a high-speed, short bit-line portion
US9053066B2 (en) 2012-03-30 2015-06-09 Sandisk Technologies Inc. NAND flash memory interface
CN102610617B (en) * 2012-03-31 2017-11-24 上海华虹宏力半导体制造有限公司 A kind of more bit SONOS flash cells, array and operating methods
US8732391B2 (en) 2012-04-23 2014-05-20 Sandisk Technologies Inc. Obsolete block management for data retention in nonvolatile memory
US8995183B2 (en) 2012-04-23 2015-03-31 Sandisk Technologies Inc. Data retention in nonvolatile memory with multiple data storage formats
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US8937837B2 (en) 2012-05-08 2015-01-20 Sandisk Technologies Inc. Bit line BL isolation scheme during erase operation for non-volatile storage
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
US9142305B2 (en) 2012-06-28 2015-09-22 Sandisk Technologies Inc. System to reduce stress on word line select transistor during erase operation
US20140003176A1 (en) 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US8854900B2 (en) 2012-07-26 2014-10-07 SanDisk Technologies, Inc. Non-volatile memory and method with peak current control
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US8737125B2 (en) 2012-08-07 2014-05-27 Sandisk Technologies Inc. Aggregating data latches for program level determination
US8730724B2 (en) 2012-08-07 2014-05-20 Sandisk Technologies Inc. Common line current for program level determination in flash memory
US20140071761A1 (en) 2012-09-10 2014-03-13 Sandisk Technologies Inc. Non-volatile storage with joint hard bit and soft bit reading
US9329986B2 (en) 2012-09-10 2016-05-03 Sandisk Technologies Inc. Peak current management in multi-die non-volatile memory devices
US8887011B2 (en) 2012-09-13 2014-11-11 Sandisk Technologies Inc. Erased page confirmation in multilevel memory
US9099532B2 (en) 2012-09-14 2015-08-04 Sandisk Technologies Inc. Processes for NAND flash memory fabrication
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
US9053011B2 (en) 2012-09-28 2015-06-09 Sandisk Technologies Inc. Selective protection of lower page data during upper page write
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9047974B2 (en) 2012-10-04 2015-06-02 Sandisk Technologies Inc. Erased state reading
US9129854B2 (en) 2012-10-04 2015-09-08 Sandisk Technologies Inc. Full metal gate replacement process for NAND flash memory
US20140108705A1 (en) 2012-10-12 2014-04-17 Sandisk Technologies Inc. Use of High Endurance Non-Volatile Memory for Read Acceleration
US9218881B2 (en) 2012-10-23 2015-12-22 Sandisk Technologies Inc. Flash memory blocks with extended data retention
US8902669B2 (en) 2012-11-08 2014-12-02 SanDisk Technologies, Inc. Flash memory with data retention bias
US9466382B2 (en) 2012-11-14 2016-10-11 Sandisk Technologies Llc Compensation for sub-block erase
US8830717B2 (en) 2012-11-29 2014-09-09 Sandisk Technologies Inc. Optimized configurable NAND parameters
US9171620B2 (en) 2012-11-29 2015-10-27 Sandisk Technologies Inc. Weighted read scrub for nonvolatile memory
US9183945B2 (en) 2012-11-30 2015-11-10 Sandisk Technologies Inc. Systems and methods to avoid false verify and false read
US9146807B2 (en) 2012-12-04 2015-09-29 Sandisk Technologies Inc. Bad column handling in flash memory
US8995184B2 (en) 2012-12-06 2015-03-31 Sandisk Technologies Inc. Adaptive operation of multi level cell memory
US9195584B2 (en) 2012-12-10 2015-11-24 Sandisk Technologies Inc. Dynamic block linking with individually configured plane parameters
US9098428B2 (en) 2012-12-11 2015-08-04 Sandisk Technologies Inc. Data recovery on cluster failures and ECC enhancements with code word interleaving
US8988941B2 (en) 2012-12-18 2015-03-24 SanDisk Tehcnologies Inc. Select transistor tuning
US8923065B2 (en) 2012-12-31 2014-12-30 SanDisk Technologies, Inc. Nonvolatile memory and method with improved I/O interface
US8837220B2 (en) 2013-01-15 2014-09-16 United Microelectronics Corp. Nonvolatile memory and manipulating method thereof
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9026757B2 (en) 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US9098205B2 (en) 2013-01-30 2015-08-04 Sandisk Technologies Inc. Data randomization in 3-D memory
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US8971128B2 (en) 2013-01-31 2015-03-03 Sandisk Technologies Inc. Adaptive initial program voltage for non-volatile memory
US8995195B2 (en) 2013-02-12 2015-03-31 Sandisk Technologies Inc. Fast-reading NAND flash memory
US9384839B2 (en) 2013-03-07 2016-07-05 Sandisk Technologies Llc Write sequence providing write abort protection
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9465732B2 (en) 2013-03-15 2016-10-11 Sandisk Technologies Llc Binning of blocks for dynamic linking
US8942038B2 (en) 2013-04-02 2015-01-27 SanDisk Technologies, Inc. High endurance nonvolatile memory
US9070449B2 (en) 2013-04-26 2015-06-30 Sandisk Technologies Inc. Defective block management
US9218890B2 (en) 2013-06-03 2015-12-22 Sandisk Technologies Inc. Adaptive operation of three dimensional memory
US9183086B2 (en) 2013-06-03 2015-11-10 Sandisk Technologies Inc. Selection of data for redundancy calculation in three dimensional nonvolatile memory
US9230656B2 (en) 2013-06-26 2016-01-05 Sandisk Technologies Inc. System for maintaining back gate threshold voltage in three dimensional NAND memory
US20150006784A1 (en) 2013-06-27 2015-01-01 Sandisk Technologies Inc. Efficient Post Write Read in Three Dimensional Nonvolatile Memory
US9063671B2 (en) 2013-07-02 2015-06-23 Sandisk Technologies Inc. Write operations with full sequence programming for defect management in nonvolatile memory
US9218242B2 (en) 2013-07-02 2015-12-22 Sandisk Technologies Inc. Write operations for defect management in nonvolatile memory
US9177663B2 (en) 2013-07-18 2015-11-03 Sandisk Technologies Inc. Dynamic regulation of memory array source line
US9442842B2 (en) 2013-08-19 2016-09-13 Sandisk Technologies Llc Memory system performance configuration
US9142324B2 (en) 2013-09-03 2015-09-22 Sandisk Technologies Inc. Bad block reconfiguration in nonvolatile memory
US9613806B2 (en) 2013-09-04 2017-04-04 Sandisk Technologies Llc Triple patterning NAND flash memory
US8932955B1 (en) 2013-09-04 2015-01-13 Sandisk Technologies Inc. Triple patterning NAND flash memory with SOC
US9342401B2 (en) 2013-09-16 2016-05-17 Sandisk Technologies Inc. Selective in-situ retouching of data in nonvolatile memory
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9240238B2 (en) 2013-09-20 2016-01-19 Sandisk Technologies Inc. Back gate operation with elevated threshold voltage
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US8929141B1 (en) 2013-10-02 2015-01-06 Sandisk Technologies Inc. Three-dimensional NAND memory with adaptive erase
US20150121156A1 (en) 2013-10-28 2015-04-30 Sandisk Technologies Inc. Block Structure Profiling in Three Dimensional Memory
US9177673B2 (en) 2013-10-28 2015-11-03 Sandisk Technologies Inc. Selection of data for redundancy calculation by likely error rate
US9501400B2 (en) 2013-11-13 2016-11-22 Sandisk Technologies Llc Identification and operation of sub-prime blocks in nonvolatile memory
US9411721B2 (en) 2013-11-15 2016-08-09 Sandisk Technologies Llc Detecting access sequences for data compression on non-volatile memory devices
US9043537B1 (en) 2013-11-21 2015-05-26 Sandisk Technologies Inc. Update block programming order
US9229644B2 (en) 2013-11-25 2016-01-05 Sandisk Technologies Inc. Targeted copy of data relocation
US9141291B2 (en) 2013-11-26 2015-09-22 Sandisk Technologies Inc. Adaptive context disbursement for improved performance in non-volatile memory systems
US9218283B2 (en) 2013-12-02 2015-12-22 Sandisk Technologies Inc. Multi-die write management
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
US9058881B1 (en) 2013-12-05 2015-06-16 Sandisk Technologies Inc. Systems and methods for partial page programming of multi level cells
US9244631B2 (en) 2013-12-06 2016-01-26 Sandisk Technologies Inc. Lower page only host burst writes
US9093158B2 (en) 2013-12-06 2015-07-28 Sandisk Technologies Inc. Write scheme for charge trapping memory
US9218886B2 (en) 2013-12-10 2015-12-22 SanDisk Technologies, Inc. String dependent parameter setup
US9208023B2 (en) 2013-12-23 2015-12-08 Sandisk Technologies Inc. Systems and methods for scheduling post-write read in nonvolatile memory
US9466383B2 (en) 2013-12-30 2016-10-11 Sandisk Technologies Llc Non-volatile memory and method with adaptive logical groups
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9508437B2 (en) 2014-01-30 2016-11-29 Sandisk Technologies Llc Pattern breaking in multi-die write management
US9368224B2 (en) 2014-02-07 2016-06-14 SanDisk Technologies, Inc. Self-adjusting regulation current for memory array source line
US9542344B2 (en) 2014-02-19 2017-01-10 Sandisk Technologies Llc Datapath management in a memory controller
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9384128B2 (en) 2014-04-18 2016-07-05 SanDisk Technologies, Inc. Multi-level redundancy code for non-volatile memory controller
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US8929169B1 (en) 2014-05-13 2015-01-06 Sandisk Technologies Inc. Power management for nonvolatile memory array
US8902652B1 (en) 2014-05-13 2014-12-02 Sandisk Technologies Inc. Systems and methods for lower page writes
US8886877B1 (en) 2014-05-15 2014-11-11 Sandisk Technologies Inc. In-situ block folding for nonvolatile memory
US9015561B1 (en) 2014-06-11 2015-04-21 Sandisk Technologies Inc. Adaptive redundancy in three dimensional memory
US8918577B1 (en) 2014-06-13 2014-12-23 Sandisk Technologies Inc. Three dimensional nonvolatile memory with variable block capacity
US9483339B2 (en) 2014-06-27 2016-11-01 Sandisk Technologies Llc Systems and methods for fast bit error rate estimation
US9633742B2 (en) 2014-07-10 2017-04-25 Sandisk Technologies Llc Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
US9218874B1 (en) 2014-08-11 2015-12-22 Sandisk Technologies Inc. Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping
US9330776B2 (en) 2014-08-14 2016-05-03 Sandisk Technologies Inc. High voltage step down regulator with breakdown protection
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9305648B2 (en) 2014-08-20 2016-04-05 SanDisk Technologies, Inc. Techniques for programming of select gates in NAND memory
US9312026B2 (en) 2014-08-22 2016-04-12 Sandisk Technologies Inc. Zoned erase verify in three dimensional nonvolatile memory
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US9224637B1 (en) 2014-08-26 2015-12-29 Sandisk Technologies Inc. Bi-level dry etching scheme for transistor contacts
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9224744B1 (en) 2014-09-03 2015-12-29 Sandisk Technologies Inc. Wide and narrow patterning using common process
US9401275B2 (en) 2014-09-03 2016-07-26 Sandisk Technologies Llc Word line with multi-layer cap structure
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9411669B2 (en) 2014-09-11 2016-08-09 Sandisk Technologies Llc Selective sampling of data stored in nonvolatile memory
US9418750B2 (en) 2014-09-15 2016-08-16 Sandisk Technologies Llc Single ended word line and bit line time constant measurement
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9236393B1 (en) 2014-09-24 2016-01-12 Sandisk Technologies Inc. 3D NAND memory with socketed floating gate cells
US9595338B2 (en) 2014-09-24 2017-03-14 Sandisk Technologies Llc Utilizing NAND strings in dummy blocks for faster bit line precharge
US9478557B1 (en) 2014-09-24 2016-10-25 Sandisk Technologies Llc Process for 3D NAND memory with socketed floating gate cells
US9419006B2 (en) 2014-09-24 2016-08-16 Sandisk Technologies Llc Process for 3D NAND memory with socketed floating gate cells
US9496272B2 (en) 2014-09-24 2016-11-15 Sandisk Technologies Llc 3D memory having NAND strings switched by transistors with elongated polysilicon gates
US20160098197A1 (en) 2014-10-06 2016-04-07 SanDisk Technologies, Inc. Nonvolatile memory and method with state encoding and page-by-page programming yielding invariant read points
US9576673B2 (en) 2014-10-07 2017-02-21 Sandisk Technologies Llc Sensing multiple reference levels in non-volatile storage elements
US9318204B1 (en) 2014-10-07 2016-04-19 SanDisk Technologies, Inc. Non-volatile memory and method with adjusted timing for individual programming pulses
US20160118135A1 (en) 2014-10-28 2016-04-28 Sandisk Technologies Inc. Two-strobe sensing for nonvolatile storage
US9443606B2 (en) 2014-10-28 2016-09-13 Sandisk Technologies Llc Word line dependent two strobe sensing mode for nonvolatile storage elements
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9361990B1 (en) 2014-12-18 2016-06-07 SanDisk Technologies, Inc. Time domain ramp rate control for erase inhibit in flash memory
US20170054032A1 (en) 2015-01-09 2017-02-23 SanDisk Technologies, Inc. Non-volatile memory having individually optimized silicide contacts and process therefor
US9385721B1 (en) 2015-01-14 2016-07-05 Sandisk Technologies Llc Bulk driven low swing driver
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US9236128B1 (en) 2015-02-02 2016-01-12 Sandisk Technologies Inc. Voltage kick to non-selected word line during programming
US9318210B1 (en) 2015-02-02 2016-04-19 Sandisk Technologies Inc. Word line kick during sensing: trimming and adjacent word lines
US9959067B2 (en) 2015-02-04 2018-05-01 Sandisk Technologies Llc Memory block allocation by block health
US9390922B1 (en) 2015-02-06 2016-07-12 Sandisk Technologies Llc Process for forming wide and narrow conductive lines
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9583207B2 (en) 2015-02-10 2017-02-28 Sandisk Technologies Llc Adaptive data shaping in nonvolatile memory
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9425047B1 (en) 2015-02-19 2016-08-23 Sandisk Technologies Llc Self-aligned process using variable-fluidity material
US9595566B2 (en) 2015-02-25 2017-03-14 Sandisk Technologies Llc Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines
US10055267B2 (en) 2015-03-04 2018-08-21 Sandisk Technologies Llc Block management scheme to handle cluster failures in non-volatile memory
US9318209B1 (en) 2015-03-24 2016-04-19 Sandisk Technologies Inc. Digitally controlled source side select gate offset in 3D NAND memory erase
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9502123B2 (en) 2015-04-21 2016-11-22 Sandisk Technologies Llc Adaptive block parameters
US9502428B1 (en) 2015-04-29 2016-11-22 Sandisk Technologies Llc Sidewall assisted process for wide and narrow line formation
US9595444B2 (en) 2015-05-14 2017-03-14 Sandisk Technologies Llc Floating gate separation in NAND flash memory
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9484098B1 (en) 2015-08-05 2016-11-01 Sandisk Technologies Llc Smart reread in nonvolatile memory
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US10157681B2 (en) 2015-09-14 2018-12-18 Sandisk Technologies Llc Programming of nonvolatile memory with verify level dependent on memory state and programming loop count
US9401216B1 (en) 2015-09-22 2016-07-26 Sandisk Technologies Llc Adaptive operation of 3D NAND memory
US9691473B2 (en) 2015-09-22 2017-06-27 Sandisk Technologies Llc Adaptive operation of 3D memory
US9792175B2 (en) 2015-10-21 2017-10-17 Sandisk Technologies Llc Bad column management in nonvolatile memory
US9858009B2 (en) 2015-10-26 2018-01-02 Sandisk Technologies Llc Data folding in 3D nonvolatile memory
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US9792994B1 (en) 2016-09-28 2017-10-17 Sandisk Technologies Llc Bulk modulation scheme to reduce I/O pin capacitance
US10199434B1 (en) 2018-02-05 2019-02-05 Sandisk Technologies Llc Three-dimensional cross rail phase change memory device and method of manufacturing the same
US10468596B2 (en) 2018-02-21 2019-11-05 Sandisk Technologies Llc Damascene process for forming three-dimensional cross rail phase change memory devices
US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
US10651378B1 (en) 2018-10-25 2020-05-12 International Business Machines Corporation Resistive random-access memory
US11017866B2 (en) * 2019-09-03 2021-05-25 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory using final bake in predetermined program state
CN112349328B (en) * 2020-10-21 2021-08-17 中天弘宇集成电路有限责任公司 Programming method of charge trapping flash memory
US11721397B2 (en) 2020-12-28 2023-08-08 Sandisk Technologies Llc Power saving and fast read sequence for non-volatile memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654568A (en) * 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping

Family Cites Families (290)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3567303A (en) * 1969-01-21 1971-03-02 Collins Radio Co Self-locking handle
US3566194A (en) * 1969-09-02 1971-02-23 Ite Imperial Corp Shallow depth load center
GB1297899A (en) 1970-10-02 1972-11-29
GB1392599A (en) 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
US3881180A (en) 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3895360A (en) 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
US4016588A (en) 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
US4017888A (en) 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4151021A (en) 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
US4145703A (en) 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4173766A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
US4173791A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4373248A (en) 1978-07-12 1983-02-15 Texas Instruments Incorporated Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
DE2832388C2 (en) 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of MNOS and MOS transistors in silicon gate technology on a semiconductor substrate
US4360900A (en) 1978-11-27 1982-11-23 Texas Instruments Incorporated Non-volatile semiconductor memory elements
US4247861A (en) 1979-03-09 1981-01-27 Rca Corporation High performance electrically alterable read-only memory (EAROM)
DE2923995C2 (en) 1979-06-13 1985-11-07 Siemens AG, 1000 Berlin und 8000 München Process for the production of integrated MOS circuits with MOS transistors and MNOS memory transistors in silicon gate technology
WO1981000790A1 (en) 1979-09-13 1981-03-19 Ncr Co Silicon gate non-volatile memory device
JPS5656677A (en) 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
US4281397A (en) 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
DE2947350A1 (en) 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING MNOS STORAGE TRANSISTORS WITH A VERY SHORT CHANNEL LENGTH IN SILICON GATE TECHNOLOGY
JPS56120166A (en) 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4342102A (en) 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
US4380057A (en) 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4521796A (en) 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
EP0056195B1 (en) 1980-12-25 1986-06-18 Fujitsu Limited Nonvolatile semiconductor memory device
US4382827A (en) * 1981-04-27 1983-05-10 Ncr Corporation Silicon nitride S/D ion implant mask in CMOS device fabrication
US4448400A (en) 1981-07-13 1984-05-15 Eliyahou Harari Highly scalable dynamic RAM cell with self-signal amplification
US4404747A (en) 1981-07-29 1983-09-20 Schur, Inc. Knife and sheath assembly
US4389705A (en) 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
US4388705A (en) 1981-10-01 1983-06-14 Mostek Corporation Semiconductor memory circuit
US4435786A (en) 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
US4494016A (en) 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4527257A (en) 1982-08-25 1985-07-02 Westinghouse Electric Corp. Common memory gate non-volatile transistor memory
JPS5949022A (en) 1982-09-13 1984-03-21 Toshiba Corp Multi-value logical circuit
US4613956A (en) 1983-02-23 1986-09-23 Texas Instruments Incorporated Floating gate memory with improved dielectric
US4701776A (en) * 1983-08-29 1987-10-20 Seeq Technology, Inc. MOS floating gate memory cell and process for fabricating same
US4769340A (en) 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
US4754314A (en) * 1984-01-24 1988-06-28 Texas Instruments Incorporated Split-level CMOS
US4725984A (en) * 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS60182174A (en) 1984-02-28 1985-09-17 Nec Corp Non-volatile semiconductor memory
GB2157489A (en) 1984-03-23 1985-10-23 Hitachi Ltd A semiconductor integrated circuit memory device
KR930007195B1 (en) 1984-05-23 1993-07-31 가부시끼가이샤 히다찌세이사꾸쇼 Semiconductor device and its manufacturing method
US5352620A (en) 1984-05-23 1994-10-04 Hitachi, Ltd. Method of making semiconductor device with memory cells and peripheral transistors
US4743564A (en) * 1984-12-28 1988-05-10 Kabushiki Kaisha Toshiba Method for manufacturing a complementary MOS type semiconductor device
US4665426A (en) 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4761764A (en) 1985-04-18 1988-08-02 Nec Corporation Programmable read only memory operable with reduced programming power consumption
US4667217A (en) 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
JPH0831789B2 (en) 1985-09-04 1996-03-27 沖電気工業株式会社 Output circuit
US4742491A (en) 1985-09-26 1988-05-03 Advanced Micro Devices, Inc. Memory cell having hot-hole injection erase mode
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US4760555A (en) 1986-04-21 1988-07-26 Texas Instruments Incorporated Memory array with an array reorganizer
JPH0828431B2 (en) 1986-04-22 1996-03-21 日本電気株式会社 Semiconductor memory device
US4758869A (en) 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5168334A (en) 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US4780424A (en) 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
US4870470A (en) 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US4839705A (en) 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
JPH07120720B2 (en) 1987-12-17 1995-12-20 三菱電機株式会社 Nonvolatile semiconductor memory device
US5159570A (en) 1987-12-22 1992-10-27 Texas Instruments Incorporated Four memory state EEPROM
US4888735A (en) 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US4857770A (en) 1988-02-29 1989-08-15 Advanced Micro Devices, Inc. Output buffer arrangement for reducing chip noise without speed penalty
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US4941028A (en) 1988-08-10 1990-07-10 Actel Corporation Structure for protecting thin dielectrics during processing
JPH0271493A (en) 1988-09-06 1990-03-12 Mitsubishi Electric Corp Semiconductor memory device
US5042009A (en) 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US5293563A (en) 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
US5120672A (en) 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
US5142495A (en) 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
DE3931596A1 (en) 1989-03-25 1990-10-04 Eurosil Electronic Gmbh VOLTAGE MULTIPLIER
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP1031992B1 (en) 1989-04-13 2006-06-21 SanDisk Corporation Flash EEPROM system
US4961010A (en) 1989-05-19 1990-10-02 National Semiconductor Corporation Output buffer for reducing switching induced noise
US5104819A (en) 1989-08-07 1992-04-14 Intel Corporation Fabrication of interpoly dielctric for EPROM-related technologies
DE3938477A1 (en) * 1989-11-20 1991-05-23 Koenig & Bauer Ag PRINT PLATE BENDING DEVICE
US5027321A (en) 1989-11-21 1991-06-25 Intel Corporation Apparatus and method for improved reading/programming of virtual ground EPROM arrays
US4992391A (en) 1989-11-29 1991-02-12 Advanced Micro Devices, Inc. Process for fabricating a control gate for a floating gate FET
US5268590A (en) * 1989-12-27 1993-12-07 Motorola, Inc. CMOS device and process
KR100199258B1 (en) 1990-02-09 1999-06-15 가나이 쓰도무 Semiconductor integrated circuit device
US5204835A (en) 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
EP0461904A3 (en) 1990-06-14 1992-09-09 Creative Integrated Systems, Inc. An improved semiconductor read-only vlsi memory
US5075245A (en) 1990-08-03 1991-12-24 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps
US5289406A (en) 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
US5117389A (en) 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
KR920006991A (en) * 1990-09-25 1992-04-28 김광호 High Voltage Generation Circuit of Semiconductor Memory Device
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP3002309B2 (en) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション, インコーポレイテッド High-speed EPROM array
JP2987193B2 (en) 1990-11-20 1999-12-06 富士通株式会社 Semiconductor storage device
US5086325A (en) 1990-11-21 1992-02-04 Atmel Corporation Narrow width EEPROM with single diffusion electrode formation
US5094968A (en) 1990-11-21 1992-03-10 Atmel Corporation Fabricating a narrow width EEPROM with single diffusion electrode formation
JP2612969B2 (en) 1991-02-08 1997-05-21 シャープ株式会社 Method for manufacturing semiconductor device
JPH04311900A (en) 1991-04-10 1992-11-04 Sharp Corp Semiconductor read only memory
JP2930440B2 (en) 1991-04-15 1999-08-03 沖電気工業株式会社 Semiconductor integrated circuit
US5424567A (en) 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
US5142496A (en) 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
US5282601A (en) * 1991-06-20 1994-02-01 General Electric Company Isolation system for medical imaging equipment
JP3109537B2 (en) 1991-07-12 2000-11-20 日本電気株式会社 Read-only semiconductor memory device
US5245572A (en) 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US5514616A (en) * 1991-08-26 1996-05-07 Lsi Logic Corporation Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures
JP2965415B2 (en) 1991-08-27 1999-10-18 松下電器産業株式会社 Semiconductor storage device
EP0740854B1 (en) 1991-08-29 2003-04-23 Hyundai Electronics Industries Co., Ltd. A self-aligned dual-bit split gate (dsg) flash eeprom cell
US5305262A (en) 1991-09-11 1994-04-19 Kawasaki Steel Corporation Semiconductor integrated circuit
US5175120A (en) 1991-10-11 1992-12-29 Micron Technology, Inc. Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
JPH05110114A (en) 1991-10-17 1993-04-30 Rohm Co Ltd Nonvolatile semiconductor memory device
JP3358663B2 (en) * 1991-10-25 2002-12-24 ローム株式会社 Semiconductor storage device and storage information reading method thereof
US5357134A (en) * 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
US5338954A (en) 1991-10-31 1994-08-16 Rohm Co., Ltd. Semiconductor memory device having an insulating film and a trap film joined in a channel region
JPH05129284A (en) 1991-11-06 1993-05-25 Sony Corp Method of setting condition of plasma sin forming film and manufacture of semiconductor device
US5260593A (en) 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
JP2564067B2 (en) * 1992-01-09 1996-12-18 株式会社東芝 Readout output circuit having sense circuit
US5293328A (en) 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JP2851962B2 (en) 1992-01-21 1999-01-27 シャープ株式会社 Semiconductor read-only memory
EP1032034A1 (en) 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
DE69326370T2 (en) * 1992-03-05 2000-01-20 Toshiba Kawasaki Kk Non-volatile semiconductor memory device
US5324675A (en) 1992-03-31 1994-06-28 Kawasaki Steel Corporation Method of producing semiconductor devices of a MONOS type
JPH05290584A (en) 1992-04-08 1993-11-05 Nec Corp Semiconductor memory
US5496753A (en) 1992-05-29 1996-03-05 Citizen Watch, Co., Ltd. Method of fabricating a semiconductor nonvolatile storage device
JPH065823A (en) 1992-06-19 1994-01-14 Toshiba Corp Nonvolatile semiconductor memory device and its application method
US5289412A (en) * 1992-06-19 1994-02-22 Intel Corporation High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
GB9217743D0 (en) 1992-08-19 1992-09-30 Philips Electronics Uk Ltd A semiconductor memory device
JP3036565B2 (en) 1992-08-28 2000-04-24 日本電気株式会社 Manufacturing method of nonvolatile semiconductor memory device
US5412601A (en) 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
US5450354A (en) 1992-08-31 1995-09-12 Nippon Steel Corporation Non-volatile semiconductor memory device detachable deterioration of memory cells
US5450341A (en) 1992-08-31 1995-09-12 Nippon Steel Corporation Non-volatile semiconductor memory device having memory cells, each for at least three different data writable thereinto selectively and a method of using the same
US5412238A (en) * 1992-09-08 1995-05-02 National Semiconductor Corporation Source-coupling, split-gate, virtual ground flash EEPROM array
US5280420A (en) * 1992-10-02 1994-01-18 National Semiconductor Corporation Charge pump which operates on a low voltage power supply
US5418743A (en) * 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
US5319593A (en) 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
JPH07114792A (en) * 1993-10-19 1995-05-02 Mitsubishi Electric Corp Semiconductor memory
US5436481A (en) 1993-01-21 1995-07-25 Nippon Steel Corporation MOS-type semiconductor device and method of making the same
US5424978A (en) 1993-03-15 1995-06-13 Nippon Steel Corporation Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same
US5393701A (en) 1993-04-08 1995-02-28 United Microelectronics Corporation Layout design to eliminate process antenna effect
JP3317459B2 (en) 1993-04-30 2002-08-26 ローム株式会社 Nonvolatile storage element, nonvolatile storage device using the same, method of driving this storage device, and method of manufacturing this storage element
US5335198A (en) 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5350710A (en) 1993-06-24 1994-09-27 United Microelectronics Corporation Device for preventing antenna effect on circuit
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
US6066463A (en) * 1993-09-28 2000-05-23 New York University Method and compositions for treatment of BCR-ABL associated leukemias and other cell proliferative disorders
US5477499A (en) 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
US5511020A (en) * 1993-11-23 1996-04-23 Monolithic System Technology, Inc. Pseudo-nonvolatile memory incorporating data refresh operation
JPH07193151A (en) 1993-12-27 1995-07-28 Toshiba Corp Non-volatile semiconductor storage and its storage method
US5440505A (en) 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
FR2715758B1 (en) * 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Source-programmable, non-volatile flip-flop, especially for memory redundancy circuits.
FR2715782B1 (en) * 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Programmable non-volatile bistable flip-flop, with predefined initial state, in particular for memory redundancy circuit.
JP3397427B2 (en) 1994-02-02 2003-04-14 株式会社東芝 Semiconductor storage device
KR100331127B1 (en) * 1994-02-15 2002-10-18 내셔널 세미콘덕터 코포레이션 High Voltage CMOS Transistors for Standard CMOS Processes
US5418176A (en) 1994-02-17 1995-05-23 United Microelectronics Corporation Process for producing memory devices having narrow buried N+ lines
WO1995024057A2 (en) 1994-03-03 1995-09-08 Rohm Corporation Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
US5467308A (en) 1994-04-05 1995-11-14 Motorola Inc. Cross-point eeprom memory array
TW241394B (en) * 1994-05-26 1995-02-21 Aplus Integrated Circuits Inc Flat-cell ROM and decoder
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
JP3725911B2 (en) 1994-06-02 2005-12-14 株式会社ルネサステクノロジ Semiconductor device
EP0691729A3 (en) * 1994-06-30 1996-08-14 Sgs Thomson Microelectronics Charge pump circuit with feedback control
DE69413960T2 (en) 1994-07-18 1999-04-01 St Microelectronics Srl Non-volatile EPROM and flash EEPROM memory and method for its production
KR100372905B1 (en) 1994-09-13 2003-05-01 애질런트 테크놀로지스, 인크. A device and method of manufacture for frotection against plasma charging damage in advanced mos technologies
JP3730272B2 (en) * 1994-09-17 2005-12-21 株式会社東芝 Nonvolatile semiconductor memory device
DE4434725C1 (en) 1994-09-28 1996-05-30 Siemens Ag Fixed value memory cell arrangement and method for the production thereof
US5619052A (en) 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
US5633202A (en) * 1994-09-30 1997-05-27 Intel Corporation High tensile nitride layer
US5523251A (en) 1994-10-05 1996-06-04 United Microelectronics Corp. Method for fabricating a self aligned mask ROM
US5612642A (en) * 1995-04-28 1997-03-18 Altera Corporation Power-on reset circuit with hysteresis
US5599727A (en) 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed
US5661060A (en) 1994-12-28 1997-08-26 National Semiconductor Corporation Method for forming field oxide regions
DE19505293A1 (en) * 1995-02-16 1996-08-22 Siemens Ag Multi-value read-only memory cell with improved signal-to-noise ratio
US5801076A (en) 1995-02-21 1998-09-01 Advanced Micro Devices, Inc. Method of making non-volatile memory device having a floating gate with enhanced charge retention
US5518942A (en) 1995-02-22 1996-05-21 Alliance Semiconductor Corporation Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5617357A (en) 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
KR100187656B1 (en) * 1995-05-16 1999-06-01 김주용 Method for manufacturing a flash eeprom and the programming method
US5621687A (en) * 1995-05-31 1997-04-15 Intel Corporation Programmable erasure and programming time for a flash memory
US5656513A (en) 1995-06-07 1997-08-12 Advanced Micro Devices, Inc. Nonvolatile memory cell formed using self aligned source implant
DE69528971D1 (en) 1995-06-30 2003-01-09 St Microelectronics Srl Method of manufacturing a circuit containing non-volatile memory cells and edge transistors of at least two different types, and corresponding IC
US6034896A (en) * 1995-07-03 2000-03-07 The University Of Toronto, Innovations Foundation Method of fabricating a fast programmable flash E2 PROM cell
US5903031A (en) 1995-07-04 1999-05-11 Matsushita Electric Industrial Co., Ltd. MIS device, method of manufacturing the same, and method of diagnosing the same
JP3424427B2 (en) 1995-07-27 2003-07-07 ソニー株式会社 Nonvolatile semiconductor memory device
US5866458A (en) * 1995-08-29 1999-02-02 Lg Semicon Co., Ltd. Method for fabricating a CMOS
US5721781A (en) * 1995-09-13 1998-02-24 Microsoft Corporation Authentication system and method for smart card transactions
US5604804A (en) * 1996-04-23 1997-02-18 Micali; Silvio Method for certifying public keys in a digital signature scheme
JP2982670B2 (en) 1995-12-12 1999-11-29 日本電気株式会社 Nonvolatile semiconductor storage device and storage method
JP3251164B2 (en) * 1995-12-14 2002-01-28 シャープ株式会社 Semiconductor device and manufacturing method thereof
KR100223747B1 (en) * 1995-12-28 1999-10-15 김영환 Output buffer with fast speed and low noise
DE69630107D1 (en) * 1996-04-15 2003-10-30 St Microelectronics Srl FLASH-EPROM integrated with an EEPROM
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5847441A (en) 1996-05-10 1998-12-08 Micron Technology, Inc. Semiconductor junction antifuse circuit
US5715193A (en) * 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
WO2004090908A1 (en) * 1996-06-11 2004-10-21 Nobuyoshi Takeuchi Nonvolatile memory having verifying function
US5683925A (en) 1996-06-13 1997-11-04 Waferscale Integration Inc. Manufacturing method for ROM array with minimal band-to-band tunneling
DE69702256T2 (en) * 1996-06-24 2001-01-18 Advanced Micro Devices Inc METHOD FOR A MULTIPLE, BITS PER CELL FLASH EEPROM, MEMORY WITH SIDE PROGRAMMING MODE, AND READING METHOD
JP2882370B2 (en) * 1996-06-28 1999-04-12 日本電気株式会社 Semiconductor storage device
US5793079A (en) * 1996-07-22 1998-08-11 Catalyst Semiconductor, Inc. Single transistor non-volatile electrically alterable semiconductor memory device
US6037627A (en) * 1996-08-02 2000-03-14 Seiko Instruments Inc. MOS semiconductor device
US5787484A (en) * 1996-08-08 1998-07-28 Micron Technology, Inc. System and method which compares data preread from memory cells to data to be written to the cells
US5717635A (en) * 1996-08-27 1998-02-10 International Business Machines Corporation High density EEPROM for solid state file
US5777919A (en) 1996-09-13 1998-07-07 Holtek Microelectronics, Inc. Select gate enhanced high density read-only-memory device
US5873113A (en) * 1996-09-24 1999-02-16 Altera Corporation System and method for programming eprom cells using shorter duration pulse(s) in repeating the programming process of a particular cell
JPH10133754A (en) * 1996-10-28 1998-05-22 Fujitsu Ltd Regulator circuit and semiconductor integrated circuit device
US5717632A (en) * 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
TW318283B (en) 1996-12-09 1997-10-21 United Microelectronics Corp Multi-level read only memory structure and manufacturing method thereof
TW347581B (en) 1997-02-05 1998-12-11 United Microelectronics Corp Process for fabricating read-only memory cells
US5872848A (en) * 1997-02-18 1999-02-16 Arcanvs Method and apparatus for witnessed authentication of electronic documents
IT1289933B1 (en) 1997-02-20 1998-10-19 Sgs Thomson Microelectronics MEMORY DEVICE WITH MATRIX OF MEMORY CELLS IN TRIPLE WELL AND RELATED MANUFACTURING PROCEDURE
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6028324A (en) 1997-03-07 2000-02-22 Taiwan Semiconductor Manufacturing Company Test structures for monitoring gate oxide defect densities and the plasma antenna effect
JPH10261292A (en) 1997-03-18 1998-09-29 Nec Corp Erasing method for non-volatile semiconductor memory
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
TW381325B (en) * 1997-04-15 2000-02-01 United Microelectronics Corp Three dimensional high density deep trench ROM and the manufacturing method thereof
US5880620A (en) * 1997-04-22 1999-03-09 Xilinx, Inc. Pass gate circuit with body bias control
US5966603A (en) 1997-06-11 1999-10-12 Saifun Semiconductors Ltd. NROM fabrication method with a periphery portion
US6335990B1 (en) * 1997-07-03 2002-01-01 Cisco Technology, Inc. System and method for spatial temporal-filtering for improving compressed digital video
JP3765163B2 (en) * 1997-07-14 2006-04-12 ソニー株式会社 Level shift circuit
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP3951443B2 (en) 1997-09-02 2007-08-01 ソニー株式会社 Nonvolatile semiconductor memory device and writing method thereof
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6281545B1 (en) * 1997-11-20 2001-08-28 Taiwan Semiconductor Manufacturing Company Multi-level, split-gate, flash memory cell
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6020241A (en) * 1997-12-22 2000-02-01 Taiwan Semiconductor Manufacturing Company Post metal code engineering for a ROM
US6195196B1 (en) * 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US6243289B1 (en) * 1998-04-08 2001-06-05 Micron Technology Inc. Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
US6344959B1 (en) * 1998-05-01 2002-02-05 Unitrode Corporation Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage
US6030871A (en) * 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6188211B1 (en) * 1998-05-13 2001-02-13 Texas Instruments Incorporated Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response
US6348711B1 (en) * 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6215148B1 (en) * 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6063666A (en) * 1998-06-16 2000-05-16 Advanced Micro Devices, Inc. RTCVD oxide and N2 O anneal for top oxide of ONO film
US6034403A (en) * 1998-06-25 2000-03-07 Acer Semiconductor Manufacturing, Inc. High density flat cell mask ROM
DE69828966D1 (en) * 1998-09-15 2005-03-17 St Microelectronics Srl Method for protecting the content of non-volatile memory cells
US6366915B1 (en) * 1998-11-04 2002-04-02 Micron Technology, Inc. Method and system for efficiently retrieving information from multiple databases
US6358469B1 (en) * 1998-12-01 2002-03-19 S. C. Johnson & Son, Inc. Odor eliminating aqueous formulation
JP3554497B2 (en) * 1998-12-08 2004-08-18 シャープ株式会社 Charge pump circuit
US6214666B1 (en) * 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6081456A (en) * 1999-02-04 2000-06-27 Tower Semiconductor Ltd. Bit line control circuit for a memory array using 2-bit non-volatile memory cells
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
US6346442B1 (en) * 1999-02-04 2002-02-12 Tower Semiconductor Ltd. Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array
US6044022A (en) * 1999-02-26 2000-03-28 Tower Semiconductor Ltd. Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays
US6208557B1 (en) * 1999-05-21 2001-03-27 National Semiconductor Corporation EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
US6337502B1 (en) * 1999-06-18 2002-01-08 Saifun Semicinductors Ltd. Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
US6175519B1 (en) * 1999-07-22 2001-01-16 Macronix International Co., Ltd. Virtual ground EPROM structure
US6353356B1 (en) * 1999-08-30 2002-03-05 Micron Technology, Inc. High voltage charge pump circuits
US6181605B1 (en) * 1999-10-06 2001-01-30 Advanced Micro Devices, Inc. Global erase/program verification apparatus and method
US6265268B1 (en) * 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6175523B1 (en) * 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
US6297143B1 (en) 1999-10-25 2001-10-02 Advanced Micro Devices, Inc. Process for forming a bit-line in a MONOS device
JP2001143487A (en) * 1999-11-15 2001-05-25 Nec Corp Semiconductor memory
US6201737B1 (en) * 2000-01-28 2001-03-13 Advanced Micro Devices, Inc. Apparatus and method to characterize the threshold distribution in an NROM virtual ground array
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
TW476179B (en) * 2000-02-11 2002-02-11 Winbond Electronics Corp Charge pump circuit applied in low supply voltage
US6410388B1 (en) * 2000-02-15 2002-06-25 Advanced Micro Devices, Inc. Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor device
US6343033B1 (en) * 2000-02-25 2002-01-29 Advanced Micro Devices, Inc. Variable pulse width memory programming
US6205056B1 (en) * 2000-03-14 2001-03-20 Advanced Micro Devices, Inc. Automated reference cell trimming verify
DE10017920A1 (en) * 2000-04-11 2001-10-25 Infineon Technologies Ag Charge pump arrangement
US6345442B1 (en) * 2000-05-22 2002-02-12 Abb Alstom Power N.V. Method of making rotor design with double seals for vertical air preheaters
JP4707803B2 (en) * 2000-07-10 2011-06-22 エルピーダメモリ株式会社 Error rate determination method and semiconductor integrated circuit device
US6519182B1 (en) * 2000-07-10 2003-02-11 Advanced Micro Devices, Inc. Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure
JP2002050705A (en) * 2000-08-01 2002-02-15 Fujitsu Ltd Semiconductor memory device and manufacturing method thereof
US6562683B1 (en) * 2000-08-31 2003-05-13 Advanced Micro Devices, Inc. Bit-line oxidation by removing ONO oxide prior to bit-line implant
US6537881B1 (en) * 2000-10-16 2003-03-25 Advanced Micro Devices, Inc. Process for fabricating a non-volatile memory device
US6583479B1 (en) * 2000-10-16 2003-06-24 Advanced Micro Devices, Inc. Sidewall NROM and method of manufacture thereof for non-volatile memory cells
US6465306B1 (en) * 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6348381B1 (en) * 2001-02-21 2002-02-19 Macronix International Co., Ltd. Method for forming a nonvolatile memory with optimum bias condition
DE10110150A1 (en) * 2001-03-02 2002-09-19 Infineon Technologies Ag Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array
US6528390B2 (en) * 2001-03-02 2003-03-04 Advanced Micro Devices, Inc. Process for fabricating a non-volatile memory device
US6351415B1 (en) * 2001-03-28 2002-02-26 Tower Semiconductor Ltd. Symmetrical non-volatile memory array architecture without neighbor effect
JP2002299473A (en) * 2001-03-29 2002-10-11 Fujitsu Ltd Semiconductor memory and its driving method
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6535434B2 (en) * 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
US6493266B1 (en) * 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6512701B1 (en) * 2001-06-21 2003-01-28 Advanced Micro Devices, Inc. Erase method for dual bit virtual ground flash
US6462387B1 (en) * 2001-06-29 2002-10-08 Chinatech Corporation High density read only memory
JP4859294B2 (en) * 2001-07-10 2012-01-25 富士通セミコンダクター株式会社 Nonvolatile semiconductor memory device
US6525969B1 (en) * 2001-08-10 2003-02-25 Advanced Micro Devices, Inc. Decoder apparatus and methods for pre-charging bit lines
US6440797B1 (en) * 2001-09-28 2002-08-27 Advanced Micro Devices, Inc. Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
US6566194B1 (en) * 2001-10-01 2003-05-20 Advanced Micro Devices, Inc. Salicided gate for virtual ground arrays
US6510082B1 (en) * 2001-10-23 2003-01-21 Advanced Micro Devices, Inc. Drain side sensing scheme for virtual ground flash EPROM array with adjacent bit charge and hold
US6639271B1 (en) * 2001-12-20 2003-10-28 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
US6674138B1 (en) * 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6529412B1 (en) * 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
US20030134476A1 (en) * 2002-01-17 2003-07-17 Yakov Roizin Oxide-nitride-oxide structure
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6706595B2 (en) * 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Hard mask process for memory device without bitline shorts
US6690602B1 (en) * 2002-04-08 2004-02-10 Advanced Micro Devices, Inc. Algorithm dynamic reference programming
US6996692B2 (en) * 2002-04-17 2006-02-07 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for providing security for the same
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
US6813189B2 (en) * 2002-07-16 2004-11-02 Fujitsu Limited System for using a dynamic reference in a double-bit cell memory
JP4260434B2 (en) * 2002-07-16 2009-04-30 富士通マイクロエレクトロニクス株式会社 Nonvolatile semiconductor memory and operation method thereof
US6734063B2 (en) * 2002-07-22 2004-05-11 Infineon Technologies Ag Non-volatile memory cell and fabrication method
JP2004079602A (en) * 2002-08-12 2004-03-11 Fujitsu Ltd Nonvolatile memory having trap layer
US6859028B2 (en) * 2002-11-26 2005-02-22 Sige Semiconductor Inc. Design-for-test modes for a phase locked loop

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654568A (en) * 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping

Also Published As

Publication number Publication date
EP1010182A2 (en) 2000-06-21
IL134304A (en) 2004-07-25
IL134304A0 (en) 2001-04-30
WO1999007000A2 (en) 1999-02-11
EP1010182A4 (en) 2000-09-27
US20030011020A1 (en) 2003-01-16
US6649972B2 (en) 2003-11-18
US20060262598A1 (en) 2006-11-23
US20050111257A1 (en) 2005-05-26
US7116577B2 (en) 2006-10-03
US20090032862A1 (en) 2009-02-05
US20080111177A1 (en) 2008-05-15
US7400529B2 (en) 2008-07-15
US20070206415A1 (en) 2007-09-06
JP2001512290A (en) 2001-08-21
AU8558998A (en) 1999-02-22
US7405969B2 (en) 2008-07-29
US6768165B1 (en) 2004-07-27
US6011725A (en) 2000-01-04

Similar Documents

Publication Publication Date Title
WO1999007000A3 (en) Two bit eeprom using asymmetrical charge trapping
US5579259A (en) Low voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectors
US5638327A (en) Flash-EEPROM memory array and method for biasing the same
US6492228B2 (en) Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
KR100616758B1 (en) Flash Memory Array
US5544103A (en) Compact page-erasable eeprom non-volatile memory
US6645813B1 (en) Flash EEPROM with function bit by bit erasing
EP0042964B1 (en) Memory matrix using one-transistor floating gate mos cells
US5020030A (en) Nonvolatile SNOS memory cell with induced capacitor
US5111257A (en) Electronic integrated circuit having an electrode layer for element isolation
US7031198B2 (en) Non-volatile semiconductor memory device and method of actuating the same
US4630087A (en) Nonvolatile semiconductor memory device
US5999453A (en) Nonvolatile semiconductor memory
US5471423A (en) Non-volatile semiconductor memory device
US6809963B2 (en) Non-volatile semiconductor memory device and method of actuating the same
US7312495B2 (en) Split gate multi-bit memory cell
US5796670A (en) Nonvolatile dynamic random access memory device
US6128223A (en) Semiconductor memory device
US6638821B1 (en) Flash EEPROM with function of single bit erasing by an application of negative control gate selection
US5787035A (en) Memory cell array
JPS609168A (en) Nonvolatile semiconductor memory storage
US6178119B1 (en) Method of erasing a non-volatile memory
US5227652A (en) Electrically programmable and erasable semiconductor memory and method of operating same
JPH0723959Y2 (en) Nonvolatile semiconductor memory device
KR980006280A (en) Flash memory cell, its manufacture, program and erase method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 134304

Country of ref document: IL

AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A3

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
NENP Non-entry into the national phase

Ref country code: KR

WWE Wipo information: entry into national phase

Ref document number: 1998936654

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1998936654

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: CA

WWE Wipo information: entry into national phase

Ref document number: 157289

Country of ref document: IL