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Patent

An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

Uppfinnare: Osamu Nakamura
Ursprunglig innehavare: Semiconductor Energy Laboratory Co., Ltd.
Primär granskare: Trinh Vo Dinh
Juridiska ombud: Nixon Peabody LLP, Jeffrey L. Costellia
Nuvarande USA-klassificering: 31511171; 31511181; 118723/R

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Citat

citerade patent Registreringsdatum Utfärdandedatum Ursprunglig innehavare Titel
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US598099928 mar 19969 nov 1999Nagoya UniversityMethod of manufacturing thin film and method for performing precise working by radical control and apparatus for carrying out such methods
US607740616 apr 199920 jun 2000Kabushiki Kaisha ToshibaSputtering system
US61497759 mar 199921 nov 2000Futaba Denshi Kogyo Kabushiki KaishaMethod for preparing single layer carbon nano-tube
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US702676419 mar 200311 apr 2006Semiconductor Energy Laboratory Co., Ltd.Plasma producing apparatus and doping apparatus
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US2002012735112 mar 2002Futaba CorporationMethod for preparing nano-carbon and nano-carbon prepared by such method and composite material or mixed material containing nano-carbon and metal fine particle, apparatus for preparing nano-carbon, method for patterning nano-carbon and nano carbon base material patterned by the use of such method, as well as electron emission source using such patterned nano-carbon base material
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US2004015963820 feb 2004Applied Materials, Inc.Clean process for an electron beam source

Anspråk

1. A plasma producing apparatus comprising:

a plasma chamber;

a cathode electrode in the plasma chamber;

an anode electrode in the plasma chamber;

a gas supplying system for introducing a material gas into the plasma chamber;
a substrate stage in the plasma chamber;
a carbon nano tube on a surface of the cathode electrode; and
a blocking plate on the surface of the cathode electrode,
wherein the anode electrode is located between the cathode electrode and the substrate stage, and
wherein the blocking plate is slanted with respect to the surface of the cathode electrode.

2. The plasma producing apparatus according to claim 1, wherein the carbon nano tube is one or more kinds selected from the group consisting of a single wall carbon nano tube, a multi wall carbon nano tube, a VGCF, a carbon nano horn, and nano glass fiber.

3. The plasma producing apparatus according to claim 1, wherein the blocking plate is slanted at an angle that can avoid collision between an electron emitted from the carbon nano tube and the blocking plate.

4. The plasma producing apparatus according to claim 1, wherein the blocking plate has a curvature.

5. The plasma producing apparatus according to claim 1, wherein the blocking plate for protecting the carbon nano tube is formed of a conductive material or an insulating material.

6. A doping apparatus using the plasma producing apparatus of claim 1.

7. An etching apparatus using the plasma producing apparatus of claim 1.

8. A film forming apparatus using the plasma producing apparatus of claim 1.

9. A plasma producing apparatus comprising:

a plasma chamber;

a cathode electrode in the plasma chamber;

an anode electrode in the plasma chamber;

a gas supplying system for introducing a material gas into the plasma chamber;
a substrate stage in the plasma chamber;
a carbon nano tube on a surface of the cathode electrode;
a blocking plate for protecting the carbon nano tube on the surface of the cathode electrode, and
a magnet on the surface of the cathode electrode;
wherein the anode electrode is located between the cathode electrode and the substrate stage, and
wherein the blocking plate is slanted with respect to the surface of the cathode electrode.

10. The plasma producing apparatus according to claim 9, wherein the carbon nano tube is one or more kinds selected from the group consisting of a single wall carbon nano tube, a multi wall carbon nano tube, a VGCF, a carbon nano horn, and nano glass fiber.

11. The plasma producing apparatus according to claim 9, wherein the blocking plate is slanted at an angle that can avoid collision between an electron emitted from the carbon nano tube and the blocking plate.

12. The plasma producing apparatus according to claim 9, wherein the blocking plate has a curvature.

13. The plasma producing apparatus according to claim 9, wherein the blocking plate for protecting the carbon nano tube blocks positive ions accelerated by a sheath electric field formed between the cathode electrode and the plasma.

14. The plasma producing apparatus according to claim 9, wherein the blocking plate for protecting the carbon nano tube is formed of a conductive material or an insulating material.

15. A doping apparatus using the plasma producing apparatus of claim 9.

16. An etching apparatus using the plasma producing apparatus of claim 9.

17. A film forming apparatus using the plasma producing apparatus of claim 9.

18. A plasma producing apparatus comprising:

a plasma chamber;

a cathode electrode in the plasma chamber;

an anode electrode in the plasma chamber;

a gas supplying system for introducing a material gas into the plasma chamber;
a substrate stage in the plasma chamber;
a carbon nano tube on a surface of the cathode electrode; and
a blocking plate on the surface of the cathode electrode,
wherein the anode electrode is located between the cathode electrode and the substrate stage, and
wherein the blocking plate has a curvature.

19. The plasma producing apparatus according to claim 18, wherein the carbon nano tube is one or more kinds selected from the group consisting of a single wall carbon nano tube, a multi wall carbon nano tube, a VGCF, a carbon nano horn, and nano glass fiber.

20. The plasma producing apparatus according to claim 18, wherein the blocking plate is slanted at an angle that can avoid collision between an electron emitted from the carbon nano tube and the blocking plate.

21. The plasma producing apparatus according to claim 18, wherein the blocking plate for protecting the carbon nano tube is formed of a conductive material or an insulating material.

22. A doping apparatus using the plasma producing apparatus of claim 18.

23. An etching apparatus using the plasma producing apparatus of claim 18.

24. A film forming apparatus using the plasma producing apparatus of claim 18.

25. A plasma producing apparatus comprising:

a plasma chamber;

a cathode electrode in the plasma chamber;

an anode electrode in the plasma chamber;

a gas supplying system for introducing a material gas into the plasma chamber;
a substrate stage in the plasma chamber;
a carbon nano tube on a surface of the cathode electrode;
a blocking plate for protecting the carbon nano tube on the surface of the cathode electrode, and
a magnet on the surface of the cathode electrode;
wherein the anode electrode is located between the cathode electrode and the substrate stage, and
wherein the blocking plate has a curvature.

26. The plasma producing apparatus according to claim 25, wherein the carbon nano tube is one or more kinds selected from the group consisting of a single wall carbon nano tube, a multi wall carbon nano tube, a VGCF, a carbon nano horn, and nano glass fiber.

27. The plasma producing apparatus according to claim 25, wherein the blocking plate is slanted at an angle that can avoid collision between an electron emitted from the carbon nano tube and the blocking plate.

28. The plasma producing apparatus according to claim 25, wherein the blocking plate for protecting the carbon nano tube blocks positive ions accelerated by a sheath electric field formed between the cathode electrode and the plasma.

29. The plasma producing apparatus according to claim 25, wherein the blocking plate for protecting the carbon nano tube is formed of a conductive material or an insulating material.

30. A doping apparatus using the plasma producing apparatus of claim 25.

31. An etching apparatus using the plasma producing apparatus of claim 25.

32. A film forming apparatus using the plasma producing apparatus of claim 25.

Ritningar