US5289033A - Packaging of semiconductor chips with resin - Google Patents

Packaging of semiconductor chips with resin Download PDF

Info

Publication number
US5289033A
US5289033A US07/690,358 US69035891A US5289033A US 5289033 A US5289033 A US 5289033A US 69035891 A US69035891 A US 69035891A US 5289033 A US5289033 A US 5289033A
Authority
US
United States
Prior art keywords
chip
package
lead frame
region
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US07/690,358
Inventor
Yukio Asami
Hiroyuki Fukasawa
Akira Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ASAMI, YUKIO, FUKASAWA, HIROYUKI, KOJIMA, AKIRA
Priority to US07/753,366 priority Critical patent/US5214846A/en
Application granted granted Critical
Publication of US5289033A publication Critical patent/US5289033A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • This invention relates to packaging of semiconductor chips, and in particular various aspects of the present invention relate to a packaged semiconductor device, a combination of a semiconductor chip and a lead frame therefor, a method of manufacturing a semiconductor device, and a mold for molding a resin package around an assembly of a semiconductor chip and a plurality of lead fingers.
  • FIG. 4 of the accompanying drawings shows a known "die pad" construction in which a chip c is bonded to a die-pad a by a bonding material d, such as a silver paste or a gold-silicon eutectic alloy.
  • the die-pad a is connected to a peripheral portion of a lead frame by connecting fingers a'.
  • a plurality of lead fingers b project from the peripheral portion of the lead frame, and each lead finger b is connected to a respective electrode of the chip c by a respective bonding wire e.
  • the chip c, die-pad a, bonding wires e and inner ends of the fingers a', b are then placed in a molding die and sealed in a resin package.
  • FIG. 5 Another known "chip-on-lead" type of construction is shown in FIG. 5.
  • an insulator f such as a polyimide sheet, is placed on the inner ends of lead fingers b, a semiconductor chip c is placed on the insulator f and the electrodes of the semiconductor chip c are connected to respective inner ends of the lead fingers b by respective bonding wires e. Again, the assembly is then sealed in a resin package.
  • FIG. 6 A further known "lead-on-chip" type of construction is shown in FIG. 6.
  • a surface of a semiconductor chip C, excluding the electrodes thereon, is covered with an insulator f , lead fingers b are placed on the insulator f, and the lead fingers b are connected to respective electrodes by respective bonding wires e.
  • the assembly is then sealed in a resin package.
  • FIG. 7 shows a known "directly connected" form of construction, in which electrode pads g of a semiconductor chip c project upwardly from the upper surface of the chip c, and the inner ends of lead fingers b are directly connected to the electrode pads g. The assembly is then sealed in a resin package.
  • the height of the semiconductor device is as small as possible.
  • the thickness of the die pad a and bonding material d add to the height of the package.
  • the thickness of the insulators f and the lead fingers b add to the height of the package.
  • the thickness of the lead fingers b and the height of the electrode pads g add to the overall height of the semiconductor package.
  • the die pad construction suffers from the problem that thermal stress is induced in the device due to differences in the coefficients of thermal expansion of the die pad a, the semiconductor chip c and the resin of the package, which can cause a breakdown in bonding between the chip c and the die pad a, between the die pad a and the resin package, or between the chip c and the resin package.
  • One object of the present invention is to enable a semiconductor device to be produced which has a decreased height.
  • Another object of the present invention is to alleviate thermal stresses in the semiconductor package.
  • a further object of the present invention is to enable the semiconductor device to be produced reliably, such that there is a small risk of the bonding wires being broken or short circuited while the resin package is being formed around the assembly of the chip, bonding wires and lead fingers.
  • a semiconductor device in which the inner ends of the lead fingers lie between the planes of the upper and lower surfaces of the semiconductor chip, and the resin package directly contacts both the upper surface and the lower surface of the chip.
  • the lead fingers may be provided by portions of a lead frame, and preferably additional finger portions are provided which do not normally contact the chip, but which restrict lateral movement of the chip with respect to the lead frame during molding of the resin package around the assembly.
  • a mold for molding a resin package around an assembly comprising a semiconductor chip having a plurality of electrodes, a plurality of lead fingers projecting away from said chip, and a plurality of bonding wires each connecting a respective one of said electrodes to a respective one of said lead fingers.
  • the mold comprises first and second complementary mold parts. At least one projection projects from at least one of the mold parts interiorly of the mold cavity provided by the mold parts for restricting movement of the chip in the mold cavity when resin is injected into the mold cavity.
  • FIG. 1 is a partial perspective view of a lead frame to which are connected a pair of semiconductor chips
  • FIG. 2 is a sectional view of a molding die loaded with a lead frame and a semiconductor chip
  • FIG. 3 is a sectional view of a resin package as formed by the molding die of FIG. 2;
  • FIG. 4 is a sectional view of a known die pad form of assembly of a lead frame and semiconductor chip
  • FIG. 5 is a perspective view of a known chip-on-lead form of assembly of semiconductor chip and lead frame
  • FIG. 6 is a perspective view of a known lead-on-chip form of assembly of a semiconductor chip and lead frame.
  • FIG. 7 is a sectional view of a known direct connection form of assembly of a semiconductor chip and lead frame.
  • a lead frame 1 for manufacturing a plurality of semiconductor devices has apertures 2 for receiving semiconductor chips 7 in a longitudinal arrangement at regular intervals.
  • the apertures 2 are provided instead of the die pads in the known die pad form of construction.
  • Each aperture 2 is of a size such that the respective chip 7 could be passed through the aperture.
  • the lead frame 1 has peripheral frame members 5 surrounding each aperture 2, tie bars 4 connecting portions of the lead frame for each chip, lead fingers 3 projecting towards each aperture 2 and horizontal movement restricting fingers 6 projecting inwardly from the side portions of the frame members 5 towards the apertures 2.
  • Each semiconductor chip 7 is placed in the respective aperture 2.
  • the size of the aperture 2 (defined by inner ends of the lead fingers 3 and movement restricting fingers 6) is such that the lead fingers 3 and the movement restricting fingers 6 do not contact the chip 7.
  • Each chip 7 has a plurality of electrodes 9, and each electrode is connected to the inner end of a respective one of the lead fingers 3 by a respective bonding wire 8. Thus, each semiconductor chip 7 is connected to the lead frame 1 solely by the bonding wires 8.
  • the lead frame 1, with the chips 7 connected thereto, is placed in a molding die, as shown in FIG. 2.
  • the molding die comprises a lower die part 10 and a complementary upper die part 11, and the lead fingers and movement restricting fingers pass through channels 14 between the die parts 10,11.
  • Both die parts 10,11 are provided with vertical movement restricting pins 12, which project towards the chip 7, but which are slightly separated from the upper and lower surfaces of the chip 7.
  • resin is injected into the mold cavity of the molding die to seal the semiconductor chip, the bonding wires 8, and the inner ends of the lead fingers 3 within a resin package 13 as shown in FIG. 3.
  • the resin his a sufficiently low viscosity in the initial stage of injection of resin into the mold cavity, the resin tends to urge the chip 7 vertically either towards the lower die part 10 or the upper die part 11, due to slight differences in resistance against the flow of the resin between the upper and lower surfaces of the semiconductor chip 7.
  • vertical movement of the chip 7 is restricted by the vertical movement restricting projections 12, so that the chip 7 cannot significantly move towards the lower die part 10 or upper die part 11.
  • the resin becomes distributed uniformly within the mold cavity, and the resin tends to fill the gaps between the tips of the vertical movement restricting projections 12 and the upper and lower surfaces of the chip 7.
  • the chip 7 tends to return to its original position within the molding die, and therefore partial exposure of the chip 7 at the locations of the movement restricting projections 12 is unlikely to occur.
  • the viscosity of the resin being injected may also tend to urge the chip sideways in the mold cavity.
  • sideways movement of the chip is restricted not only by the bonding wires 8, but also by the horizontal movement restricting fingers 6. Even if the tip of one or more of the horizontal movement restricting fingers 6 possibly remains in contact with a side surface of the chip 7 after the resin has hardened, no problem arises because the portions of the horizontal movement restricting projections which project outside the resin package 13 are subsequently cut off.
  • the lower and upper die parts 10,11 are separated, and the lead frame with the packages molded thereon are removed. Then, the horizontal movement restricting portions 6 are cut off flush with the side of each package 13, and the lead fingers 3 are severed each at a location spaced from the resin package so as to form individual connecting leads for the chips.

Abstract

A semiconductor device is fabricated by placing a semiconductor chip in a lead frame which has no die pad. Electrodes of the chip are connected by bonding wires to respective lead fingers. Additionally, the lead frame has movement restricting fingers which limit horizontal movement of the chip within the lead frame during injection of resin into a mold surrounding the chip. Furthermore, the mold has horizontal movement restricting projections to limit vertical movement of the chip within the mold cavity. The restriction on horizontal and vertical movement of the chip reduces the risk of the bonding wires being broken or short circuited during the resin injection process.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to packaging of semiconductor chips, and in particular various aspects of the present invention relate to a packaged semiconductor device, a combination of a semiconductor chip and a lead frame therefor, a method of manufacturing a semiconductor device, and a mold for molding a resin package around an assembly of a semiconductor chip and a plurality of lead fingers.
2. Description of the Prior Art
There are a number of known manners of manufacturing a semiconductor device, in which a semiconductor chip is sealed in a resin package. FIG. 4 of the accompanying drawings shows a known "die pad" construction in which a chip c is bonded to a die-pad a by a bonding material d, such as a silver paste or a gold-silicon eutectic alloy. The die-pad a is connected to a peripheral portion of a lead frame by connecting fingers a'. A plurality of lead fingers b project from the peripheral portion of the lead frame, and each lead finger b is connected to a respective electrode of the chip c by a respective bonding wire e. The chip c, die-pad a, bonding wires e and inner ends of the fingers a', b are then placed in a molding die and sealed in a resin package.
Another known "chip-on-lead" type of construction is shown in FIG. 5. In this case, an insulator f, such as a polyimide sheet, is placed on the inner ends of lead fingers b, a semiconductor chip c is placed on the insulator f and the electrodes of the semiconductor chip c are connected to respective inner ends of the lead fingers b by respective bonding wires e. Again, the assembly is then sealed in a resin package.
A further known "lead-on-chip" type of construction is shown in FIG. 6. In this case, a surface of a semiconductor chip C, excluding the electrodes thereon, is covered with an insulator f , lead fingers b are placed on the insulator f, and the lead fingers b are connected to respective electrodes by respective bonding wires e. Once again, the assembly is then sealed in a resin package.
Lastly, FIG. 7 shows a known "directly connected" form of construction, in which electrode pads g of a semiconductor chip c project upwardly from the upper surface of the chip c, and the inner ends of lead fingers b are directly connected to the electrode pads g. The assembly is then sealed in a resin package.
It is desirable that the height of the semiconductor device is as small as possible. However, in the die pad construction described above, the thickness of the die pad a and bonding material d add to the height of the package. In the chip-on-lead and lead-on-chip forms of construction described above, the thickness of the insulators f and the lead fingers b add to the height of the package. In the directly connected form of construction described above, the thickness of the lead fingers b and the height of the electrode pads g add to the overall height of the semiconductor package. Also, the die pad construction suffers from the problem that thermal stress is induced in the device due to differences in the coefficients of thermal expansion of the die pad a, the semiconductor chip c and the resin of the package, which can cause a breakdown in bonding between the chip c and the die pad a, between the die pad a and the resin package, or between the chip c and the resin package.
OBJECT AND SUMMARY OF THE INVENTION
One object of the present invention is to enable a semiconductor device to be produced which has a decreased height.
Another object of the present invention is to alleviate thermal stresses in the semiconductor package.
A further object of the present invention is to enable the semiconductor device to be produced reliably, such that there is a small risk of the bonding wires being broken or short circuited while the resin package is being formed around the assembly of the chip, bonding wires and lead fingers.
In accordance with one aspect of the present invention, there is provided a semiconductor device, in which the inner ends of the lead fingers lie between the planes of the upper and lower surfaces of the semiconductor chip, and the resin package directly contacts both the upper surface and the lower surface of the chip. Thus, a reduced height package is provided, and no thermal stress is induced due to the presence of a die pad.
The lead fingers may be provided by portions of a lead frame, and preferably additional finger portions are provided which do not normally contact the chip, but which restrict lateral movement of the chip with respect to the lead frame during molding of the resin package around the assembly.
In accordance with another aspect of the present invention, there is provided a mold for molding a resin package around an assembly comprising a semiconductor chip having a plurality of electrodes, a plurality of lead fingers projecting away from said chip, and a plurality of bonding wires each connecting a respective one of said electrodes to a respective one of said lead fingers. The mold comprises first and second complementary mold parts. At least one projection projects from at least one of the mold parts interiorly of the mold cavity provided by the mold parts for restricting movement of the chip in the mold cavity when resin is injected into the mold cavity.
Other objects, features and advantages of the present invention will become apparent upon consideration of the following detailed description of a preferred embodiment thereof, especially when considered with the accompanying drawings in which like reference numerals are employed to designate the same or similar components in the different figures.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a partial perspective view of a lead frame to which are connected a pair of semiconductor chips;
FIG. 2 is a sectional view of a molding die loaded with a lead frame and a semiconductor chip;
FIG. 3 is a sectional view of a resin package as formed by the molding die of FIG. 2;
FIG. 4 is a sectional view of a known die pad form of assembly of a lead frame and semiconductor chip;
FIG. 5 is a perspective view of a known chip-on-lead form of assembly of semiconductor chip and lead frame;
FIG. 6 is a perspective view of a known lead-on-chip form of assembly of a semiconductor chip and lead frame; and
FIG. 7 is a sectional view of a known direct connection form of assembly of a semiconductor chip and lead frame.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring to FIGS. 1 to 3, a lead frame 1 for manufacturing a plurality of semiconductor devices has apertures 2 for receiving semiconductor chips 7 in a longitudinal arrangement at regular intervals. The apertures 2 are provided instead of the die pads in the known die pad form of construction. Each aperture 2 is of a size such that the respective chip 7 could be passed through the aperture.
The lead frame 1 has peripheral frame members 5 surrounding each aperture 2, tie bars 4 connecting portions of the lead frame for each chip, lead fingers 3 projecting towards each aperture 2 and horizontal movement restricting fingers 6 projecting inwardly from the side portions of the frame members 5 towards the apertures 2.
Each semiconductor chip 7 is placed in the respective aperture 2. The size of the aperture 2 (defined by inner ends of the lead fingers 3 and movement restricting fingers 6) is such that the lead fingers 3 and the movement restricting fingers 6 do not contact the chip 7.
Each chip 7 has a plurality of electrodes 9, and each electrode is connected to the inner end of a respective one of the lead fingers 3 by a respective bonding wire 8. Thus, each semiconductor chip 7 is connected to the lead frame 1 solely by the bonding wires 8.
Then, the lead frame 1, with the chips 7 connected thereto, is placed in a molding die, as shown in FIG. 2. The molding die comprises a lower die part 10 and a complementary upper die part 11, and the lead fingers and movement restricting fingers pass through channels 14 between the die parts 10,11. Both die parts 10,11 are provided with vertical movement restricting pins 12, which project towards the chip 7, but which are slightly separated from the upper and lower surfaces of the chip 7. After the chip 7 has been placed in the molding die, supported solely by the lead frame 1 and the bonding wires 8, resin is injected into the mold cavity of the molding die to seal the semiconductor chip, the bonding wires 8, and the inner ends of the lead fingers 3 within a resin package 13 as shown in FIG. 3.
Although the resin his a sufficiently low viscosity in the initial stage of injection of resin into the mold cavity, the resin tends to urge the chip 7 vertically either towards the lower die part 10 or the upper die part 11, due to slight differences in resistance against the flow of the resin between the upper and lower surfaces of the semiconductor chip 7. However, vertical movement of the chip 7 is restricted by the vertical movement restricting projections 12, so that the chip 7 cannot significantly move towards the lower die part 10 or upper die part 11. As injection progresses, the resin becomes distributed uniformly within the mold cavity, and the resin tends to fill the gaps between the tips of the vertical movement restricting projections 12 and the upper and lower surfaces of the chip 7. Once injection of the resin has been completed, the chip 7 tends to return to its original position within the molding die, and therefore partial exposure of the chip 7 at the locations of the movement restricting projections 12 is unlikely to occur. The viscosity of the resin being injected may also tend to urge the chip sideways in the mold cavity. However, sideways movement of the chip is restricted not only by the bonding wires 8, but also by the horizontal movement restricting fingers 6. Even if the tip of one or more of the horizontal movement restricting fingers 6 possibly remains in contact with a side surface of the chip 7 after the resin has hardened, no problem arises because the portions of the horizontal movement restricting projections which project outside the resin package 13 are subsequently cut off.
After the resin has hardened, the lower and upper die parts 10,11 are separated, and the lead frame with the packages molded thereon are removed. Then, the horizontal movement restricting portions 6 are cut off flush with the side of each package 13, and the lead fingers 3 are severed each at a location spaced from the resin package so as to form individual connecting leads for the chips.
Having described a preferred embodiment of the invention with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiment and that various changes and modification thereof may be effected by one skilled in the art without departing from the spirit or scope of the invention as defined in the appended claims.

Claims (5)

What is claimed is:
1. A semiconductor device, comprising:
a resin package;
a semiconductor chip sealed within said package, said chip having upper and lower surfaces lying in upper and lower planes, respectively, and said chip having a plurality of electrodes;
a peripheral portion surrounding a region for receiving said chip;
a plurality of lead fingers each having an outer end disposed outside said package and each having an inner end disposed within said package and lying between said upper and lower planes and projecting from said peripheral portion towards said region; and
a plurality of bonding wires each connecting a respective one of said plurality of electrodes to a respective one of said inner ends of said lead fingers;
wherein said chip is disposed in said region without rigid connection to any of said lead fingers before sealing in said resin package such that said resin package directly contacts substantially all of said chip.
2. A combination comprising a semiconductor chip having a plurality of electrodes, a lead frame and a plurality of bonding wires each connected at first ends thereof to selective ones of said electrodes for use in manufacturing a semiconductor device from said chip, said lead frame comprising;
a peripheral portion surrounding a region for receiving said chip; and
a plurality of finger portions projecting from said peripheral portion towards said region and terminating outside said region, said plurality of bonding wires connected at second ends thereof to selective ones of said finger portions, said chip disposed in said region without contacting said finger potions such that the lead frame provides a through aperture in said region for receiving said chip, said chip supported in said through aperture by said bonding wires.
3. A combination as claimed in claim 2, wherein said lead frame comprises a plurality of movement restricting finger portions for restricting movement of said chip during manufacture of said device.
4. A combination as claimed in claim 2, further comprising:
a resin package;
said semiconductor chip sealed within said package, said chip having upper and lower surfaces lying in upper and lower planes, respectively;
said plurality of finger portions each having an outer end disposed outside said package and each having an inner end disposed within said package and lying between said upper and lower planes;
wherein said resin package directly contacts both said upper surface and said lower surface of said chip.
5. A combination as claimed in claim 4 wherein said resin package directly contacts substantially all of said chip.
US07/690,358 1990-04-25 1991-04-24 Packaging of semiconductor chips with resin Expired - Fee Related US5289033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/753,366 US5214846A (en) 1991-04-24 1991-08-30 Packaging of semiconductor chips

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-109934 1990-04-25
JP2109934A JP2890662B2 (en) 1990-04-25 1990-04-25 Method for manufacturing resin-encapsulated semiconductor device and lead frame used therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US07/753,366 Division US5214846A (en) 1991-04-24 1991-08-30 Packaging of semiconductor chips

Publications (1)

Publication Number Publication Date
US5289033A true US5289033A (en) 1994-02-22

Family

ID=14522816

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/690,358 Expired - Fee Related US5289033A (en) 1990-04-25 1991-04-24 Packaging of semiconductor chips with resin

Country Status (5)

Country Link
US (1) US5289033A (en)
EP (1) EP0454440B1 (en)
JP (1) JP2890662B2 (en)
KR (1) KR100222349B1 (en)
DE (1) DE69112693T2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
US5660461A (en) * 1994-12-08 1997-08-26 Quantum Devices, Inc. Arrays of optoelectronic devices and method of making same
US6011220A (en) * 1995-11-16 2000-01-04 Kabushiki Kaisha Toshiba Semiconductor packaged device and lead frame used therein
US6148673A (en) * 1994-10-07 2000-11-21 Motorola, Inc. Differential pressure sensor and method thereof
US20040093962A1 (en) * 2002-09-19 2004-05-20 Hubert Benzel Sensor
US6821822B1 (en) * 1998-03-26 2004-11-23 Seiko Epson Corporation Method of manufacturing semiconductor device, molding device for semiconductor device, and semiconductor device
US20110171782A1 (en) * 2010-01-14 2011-07-14 Vijay Sarihan Method for forming a packaged semiconductor device having a ground plane
US11096287B2 (en) * 2018-01-10 2021-08-17 Disco Corporation Method of manufacturing packaged board

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956423A (en) * 1985-10-29 1990-09-11 Occidental Chemical Corporation Hot-melt adhesives
FI90850C (en) * 1992-05-29 1994-04-11 Idesco Oy Method for providing a plastic injection-molded transport or storage structure with a remote-readable escort memory and a remote-readable escort memory provided with plastic injection-molded transport or storage structure
DE4231705C2 (en) * 1992-09-22 1998-04-30 Siemens Ag Semiconductor device with a system carrier and an associated semiconductor chip and method for their production
JPH07273669A (en) * 1992-12-21 1995-10-20 Sony Corp Error correction method
JPH1117557A (en) * 1997-05-01 1999-01-22 Mitsubishi Electric Corp Error correction method and device therefor
DE10227936C1 (en) * 2002-06-21 2003-05-15 Heraeus Gmbh W C Method for making contactless chip card modules comprises stamping out module supports from metal strip, on to which electronic components are fitted and plastic injected
US20040113240A1 (en) 2002-10-11 2004-06-17 Wolfgang Hauser An electronic component with a leadframe
DE10247610A1 (en) * 2002-10-11 2004-04-29 Micronas Gmbh Electronic component with a leadframe
JP6104545B2 (en) * 2012-09-19 2017-03-29 シャープ株式会社 Semiconductor device manufacturing method and molded member

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3802069A (en) * 1972-05-04 1974-04-09 Gte Sylvania Inc Fabricating packages for use in integrated circuits
US4012766A (en) * 1973-08-28 1977-03-15 Western Digital Corporation Semiconductor package and method of manufacture thereof
US4069924A (en) * 1976-11-18 1978-01-24 Western Electric Co., Inc. Methods and apparatus for positioning an article laterally on a support
US4255851A (en) * 1978-12-06 1981-03-17 Western Electric Company, Inc. Method and apparatus for indelibly marking articles during a manufacturing process
US4330790A (en) * 1980-03-24 1982-05-18 National Semiconductor Corporation Tape operated semiconductor device packaging
US4331740A (en) * 1980-04-14 1982-05-25 National Semiconductor Corporation Gang bonding interconnect tape process and structure for semiconductor device automatic assembly
JPS6037754A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Flat package
EP0213764A2 (en) * 1985-08-06 1987-03-11 THE GENERAL ELECTRIC COMPANY, p.l.c. Preparation of fragile sheet-like devices, such as lead frames
EP0273725A2 (en) * 1986-12-26 1988-07-06 Kabushiki Kaisha Toshiba Encapsulated semiconductor device
US4756080A (en) * 1986-01-27 1988-07-12 American Microsystems, Inc. Metal foil semiconductor interconnection method
US4788583A (en) * 1986-07-25 1988-11-29 Fujitsu Limited Semiconductor device and method of producing semiconductor device
US4806409A (en) * 1987-05-20 1989-02-21 Olin Corporation Process for providing an improved electroplated tape automated bonding tape and the product produced thereby
US4812421A (en) * 1987-10-26 1989-03-14 Motorola, Inc. Tab-type semiconductor process
JPH01262115A (en) * 1988-04-14 1989-10-19 Seiko Epson Corp Injection molding die for sealing ic
US4884124A (en) * 1986-08-19 1989-11-28 Mitsubishi Denki Kabushiki Kaisha Resin-encapsulated semiconductor device
EP0350833A2 (en) * 1988-07-11 1990-01-17 Fujitsu Limited Integrated circuit package structure
EP0366386A2 (en) * 1988-10-24 1990-05-02 Motorola, Inc. Flagless semiconductor package
JPH02134852A (en) * 1988-11-15 1990-05-23 Nec Corp Resin-sealed semiconductor device
US5018003A (en) * 1988-10-20 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Lead frame and semiconductor device

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3802069A (en) * 1972-05-04 1974-04-09 Gte Sylvania Inc Fabricating packages for use in integrated circuits
US4012766A (en) * 1973-08-28 1977-03-15 Western Digital Corporation Semiconductor package and method of manufacture thereof
US4069924A (en) * 1976-11-18 1978-01-24 Western Electric Co., Inc. Methods and apparatus for positioning an article laterally on a support
US4255851A (en) * 1978-12-06 1981-03-17 Western Electric Company, Inc. Method and apparatus for indelibly marking articles during a manufacturing process
US4330790A (en) * 1980-03-24 1982-05-18 National Semiconductor Corporation Tape operated semiconductor device packaging
US4331740A (en) * 1980-04-14 1982-05-25 National Semiconductor Corporation Gang bonding interconnect tape process and structure for semiconductor device automatic assembly
JPS6037754A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Flat package
EP0213764A2 (en) * 1985-08-06 1987-03-11 THE GENERAL ELECTRIC COMPANY, p.l.c. Preparation of fragile sheet-like devices, such as lead frames
US4756080A (en) * 1986-01-27 1988-07-12 American Microsystems, Inc. Metal foil semiconductor interconnection method
US4788583A (en) * 1986-07-25 1988-11-29 Fujitsu Limited Semiconductor device and method of producing semiconductor device
US4884124A (en) * 1986-08-19 1989-11-28 Mitsubishi Denki Kabushiki Kaisha Resin-encapsulated semiconductor device
EP0273725A2 (en) * 1986-12-26 1988-07-06 Kabushiki Kaisha Toshiba Encapsulated semiconductor device
US4806409A (en) * 1987-05-20 1989-02-21 Olin Corporation Process for providing an improved electroplated tape automated bonding tape and the product produced thereby
US4812421A (en) * 1987-10-26 1989-03-14 Motorola, Inc. Tab-type semiconductor process
JPH01262115A (en) * 1988-04-14 1989-10-19 Seiko Epson Corp Injection molding die for sealing ic
EP0350833A2 (en) * 1988-07-11 1990-01-17 Fujitsu Limited Integrated circuit package structure
US5018003A (en) * 1988-10-20 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Lead frame and semiconductor device
EP0366386A2 (en) * 1988-10-24 1990-05-02 Motorola, Inc. Flagless semiconductor package
US4924291A (en) * 1988-10-24 1990-05-08 Motorola Inc. Flagless semiconductor package
JPH02134852A (en) * 1988-11-15 1990-05-23 Nec Corp Resin-sealed semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
US6148673A (en) * 1994-10-07 2000-11-21 Motorola, Inc. Differential pressure sensor and method thereof
US5660461A (en) * 1994-12-08 1997-08-26 Quantum Devices, Inc. Arrays of optoelectronic devices and method of making same
US6011220A (en) * 1995-11-16 2000-01-04 Kabushiki Kaisha Toshiba Semiconductor packaged device and lead frame used therein
US6821822B1 (en) * 1998-03-26 2004-11-23 Seiko Epson Corporation Method of manufacturing semiconductor device, molding device for semiconductor device, and semiconductor device
US20040093962A1 (en) * 2002-09-19 2004-05-20 Hubert Benzel Sensor
US7073400B2 (en) * 2002-09-19 2006-07-11 Robert Bosch Gmbh Sensor for measuring pressure in a sealed volume
US20110171782A1 (en) * 2010-01-14 2011-07-14 Vijay Sarihan Method for forming a packaged semiconductor device having a ground plane
US8080444B2 (en) 2010-01-14 2011-12-20 Freescale Semiconductor, Inc. Method for forming a packaged semiconductor device having a ground plane
US11096287B2 (en) * 2018-01-10 2021-08-17 Disco Corporation Method of manufacturing packaged board

Also Published As

Publication number Publication date
EP0454440B1 (en) 1995-09-06
KR910019187A (en) 1991-11-30
JP2890662B2 (en) 1999-05-17
JPH047848A (en) 1992-01-13
EP0454440A1 (en) 1991-10-30
DE69112693T2 (en) 1996-02-01
DE69112693D1 (en) 1995-10-12
KR100222349B1 (en) 1999-10-01

Similar Documents

Publication Publication Date Title
US5289033A (en) Packaging of semiconductor chips with resin
US5214846A (en) Packaging of semiconductor chips
US7410834B2 (en) Method of manufacturing a semiconductor device
US5521428A (en) Flagless semiconductor device
US20070000599A1 (en) Assembly method for semiconductor die and lead frame
WO1998029903A1 (en) Resin-encapsulated semiconductor device and method for manufacturing the same
JPH06252316A (en) Method for forming plastic member on lead frame
JPH088280A (en) Electronic parts and its manufacturing method
US5714792A (en) Semiconductor device having a reduced die support area and method for making the same
US5508232A (en) Method of manufacturing a semiconductor device
JP3226628B2 (en) Tape carrier, semiconductor device using the same, and method of manufacturing the same
KR100454774B1 (en) Semiconductor device
JPH077124A (en) Semiconductor device containing x-shaped die supporting member
JPS6248375B2 (en)
JPH04317363A (en) Resin sealed semiconductor device without die pad and its manufacturing method
JPH0653264A (en) Manufacture of semiconductor device
JPH02202042A (en) Resin-sealed semiconductor device
KR200141125Y1 (en) Structure of lead frame
KR0152941B1 (en) Semiconductor package
JPH02295140A (en) Resin-sealing method for semiconductor device
JPH039538A (en) Resin seal metal mold for semiconductor device
JP3514516B2 (en) Method for manufacturing semiconductor device
KR19990012316A (en) Molding mold apparatus of semiconductor package
JPH07193179A (en) Lead frame
US20060192275A1 (en) Encapsulation method for semiconductor device having center pad

Legal Events

Date Code Title Description
AS Assignment

Owner name: SONY CORPORATION

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:ASAMI, YUKIO;FUKASAWA, HIROYUKI;KOJIMA, AKIRA;REEL/FRAME:005742/0830

Effective date: 19910515

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20060222