Sök Bilder Kartor Play YouTube Nyheter Gmail Drive Mer »
Avancerad patentsökning | Webbhistorik | Logga in

Patent

Hänvisningar finns i följande patent

citeras i Registreringsdatum Utfärdandedatum Ursprunglig innehavare Titel
US403328722 jan 19765 jul 1977Bell Telephone Laboratories, IncorporatedRadial flow reactor including glow discharge limiting shield
US406603717 dec 19753 jan 1978LFE CorportionApparatus for depositing dielectric films using a glow discharge
US414200422 jan 197627 feb 1979Bell Telephone Laboratories, IncorporatedMethod of coating semiconductor substrates
US420713713 apr 197910 jun 1980Bell Telephone Laboratories, IncorporatedMethod of controlling a plasma etching process by monitoring the impedance changes of the RF power
US42626311 okt 197921 apr 1981Thin film deposition apparatus using an RF glow discharge
US42752894 feb 198023 jun 1981Western Electric Company, Inc.Uniformly cooled plasma etching electrode
US428979711 okt 197915 sep 1981Western Electric Co., IncorporatedMethod of depositing uniform films of Si.sub.x N.sub.y or Si.sub.x O.sub.y in a plasma reactor
US43617493 nov 198030 nov 1982Western Electric Co., Inc.Uniformly cooled plasma etching electrode
US44217861 jun 198220 dec 1983Western Electric Co.Chemical vapor deposition reactor for silicon epitaxial processes
US446123717 mar 198324 jul 1984International Business Machines CorporationPlasma reactor for etching and coating substrates
US449261012 dec 19838 jan 1985Tokyo Shibaura Denki Kabushiki KaishaDry Etching method and device therefor
US453482629 dec 198313 aug 1985IBM CorporationTrench etch process for dielectric isolation
US458566816 aug 198429 apr 1986Michigan State UniversityMethod for treating a surface with a microwave or UHF plasma and improved apparatus
US460305625 apr 198529 jul 1986International Business Machines CorporationSurface treatment of a molybdenum screening mask
US463056615 nov 198523 dec 1986Board of Trustees operating Michigan State UniversityMicrowave or UHF plasma improved apparatus
US465410622 okt 198431 mar 1987Texas Instruments IncorporatedAutomated plasma reactor
US465761722 okt 198414 apr 1987Texas Instruments IncorporatedAnodized aluminum substrate for plasma etch reactor
US465761822 okt 198414 apr 1987Texas Instruments IncorporatedPowered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate
US465762022 okt 198414 apr 1987Texas Instruments IncorporatedAutomated single slice powered load lock plasma reactor
US465762122 okt 198414 apr 1987Texas Instruments IncorporatedLow particulate vacuum chamber input/output valve
US465941324 okt 198421 apr 1987Texas Instruments IncorporatedAutomated single slice cassette load lock plasma reactor
US466119622 okt 198428 apr 1987Texas Instruments IncorporatedPlasma etch movable substrate
US468611113 feb 198411 aug 1987Motorola, Inc.Passivated and low scatter acoustic wave devices and method thereof
US47087667 nov 198624 nov 1987Texas Instruments IncorporatedHydrogen iodide etch of tin oxide
US480142725 feb 198731 jan 1989Adir JacobProcess and apparatus for dry sterilization of medical devices and materials
US480700426 nov 198621 feb 1989Texas Instruments IncorporatedTin oxide CCD imager
US481848814 jul 19874 apr 1989Process and apparatus for dry sterilization of medical devices and materials
US483402227 okt 198730 maj 1989Focus Semiconductor Systems, Inc.CVD reactor and gas injection system
US488507426 apr 19895 dec 1989International Business Machines CorporationPlasma reactor having segmented electrodes
US491758622 nov 198817 apr 1990Process for dry sterilization of medical devices and materials
US493126122 nov 19885 jun 1990Apparatus for dry sterilization of medical devices and materials
US494341722 nov 198824 jul 1990Apparatus for dry sterilization of medical devices and materials
US497692031 mar 198911 dec 1990Process for dry sterilization of medical devices and materials
US497699617 feb 198711 dec 1990Lam Research CorporationChemical vapor deposition reactor and method of use thereof
US499335828 jul 198919 feb 1991Watkins-Johnson CompanyChemical vapor deposition reactor and method of operation
US508741831 aug 199011 feb 1992Process for dry sterilization of medical devices and materials
US51715253 aug 199015 dec 1992Process and apparatus for dry sterilization of medical devices and materials
US520015819 sep 19916 apr 1993Process and apparatus for dry sterilization of medical devices and materials
US55229351 mar 19934 jun 1996NEC CorporationPlasma CVD apparatus for manufacturing a semiconductor device
US590240710 aug 199511 maj 1999Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US600210910 jul 199514 dec 1999Mattson Technology, Inc.System and method for thermal processing of a semiconductor substrate
US60745193 sep 199913 jun 2000Samsung Electronics Co., Ltd.Plasma etching apparatus having a sealing member coupling an upper electrode to an etching chamber
US640392525 okt 200011 jun 2002Mattson Technology, Inc.System and method for thermal processing of a semiconductor substrate
US699554518 aug 20037 feb 2006MKS Instruments, Inc.Control system for a sputtering system
US729420724 mar 200313 nov 2007Aixtron AGGas-admission element for CVD processes, and device
US764193931 okt 20075 jan 2010Bridgelux, Inc.Chemical vapor deposition reactor having multiple inlets
US770939831 okt 20054 maj 2010Aixtron AGProcess and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned
US789749512 dec 20061 mar 2011Applied Materials, Inc.Formation of epitaxial layer containing silicon and carbon
US799921026 feb 200316 aug 2011Sumitomo Electric Industries, Ltd.Heating device for manufacturing semiconductor
US821637526 apr 200710 jul 2012Bridgelux, Inc.Slab cross flow CVD reactor
US821641930 jun 200810 jul 2012Bridgelux, Inc.Drilled CVD shower head
USRE3024428 sep 19781 apr 1980Bell Telephone Laboratories, IncorporatedRadial flow reactor including glow discharge limitting shield