US3619402A - Process and device for depositing on surfaces - Google Patents

Process and device for depositing on surfaces Download PDF

Info

Publication number
US3619402A
US3619402A US766682A US3619402DA US3619402A US 3619402 A US3619402 A US 3619402A US 766682 A US766682 A US 766682A US 3619402D A US3619402D A US 3619402DA US 3619402 A US3619402 A US 3619402A
Authority
US
United States
Prior art keywords
coil
wall
frequency coil
deposited
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US766682A
Inventor
Joseph Wurm
Pierre Beucherie
Michel Block
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
European Atomic Energy Community Euratom
Original Assignee
European Atomic Energy Community Euratom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by European Atomic Energy Community Euratom filed Critical European Atomic Energy Community Euratom
Application granted granted Critical
Publication of US3619402A publication Critical patent/US3619402A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

  • Apparatus for depositing a thin layer of a conducting or partially conducting material on the surface of a body which includes a vacuum chamber, a high frequency coil located within the chamber for generating an electromagnetic field and means for supplying gas into the chamber in the vicinity of the electromagnetic field.
  • a substantially tubular wall which may be in the form of a cylinder or a truncated cone, is disposed within the high-frequency coil and electrically connected thereto. The tubular wall is slit from end to end to prevent heating by direct induction with a consequent reduction in the formation of the plasma and lowering of the efficiency of the coating operation.
  • the invention relates to a process and apparatus for coating surfaces and to improvements in or modifications of the invention forming the subject of specification No. 39140/66 (Belgian Specification No. 673939).
  • Specification No. 39140/66 describes a process and an apparatus for depositing on surfaces of all kinds coats of metals or alloys (intermetallic compounds), graphite and all types of conductors or partial or semiconductors. These coats may cover metal, ceramic or plastics surfaces, in the form of noncorrosive protective layers or in the form of a diffusion barrier inside or outside any object, or form electrically conductive or heat-conducting coatings, or coats applied for the purpose of decoration or their appearance. It is possible in carrying out the invention to apply coatings which are conductive or which are compounds not necessarily themselves conductive but having at least one conductive component.
  • the surface to be coated is immersed in a gaseous atmosphere which is constantly renewed and kept at a substantially constant low pressure, this gas being subjected to a high-frequency high voltage electromagnetic field by applicator means that are immersed in the gaseous atmosphere and are made, at least in part, of the material to be deposited or one of its components, so as to ionize the gas and convert it, at least in part, into plasma, whose particles, owing to their agitation, strike the means or part thereof aforesaid for the application of the high-frequency field and tear off them, as a result of the shock produced, small particles of material which, according to whether the gas is inert or reactive, are deposited unchanged or after combination with the gas on the surface to be coated.
  • the apparatus or device for implementing this process is extremely simple. It comprises essentially a vacuum chamber in which are placed the article to be covered, a high-frequency coil made of the material to be deposited and a conduit for supplying gas, opening in the proximity of the coil.
  • a wall formed of the material to be deposited and slit from end to end is disposed within the means for producing the highfrequency field and is connected to it electrically.
  • this wall plays, of course, an important part. In the simplest embodiment it is cylindrical and slit along a generatrix.
  • the coil surrounding it is also in the form of a truncated cone, i.e. the diameters of its turns vary to produce a conical formation of the coil.
  • the injection of the neutral gas which normally takes place at one end of the coil, may, in the case of the cylindrical wall, be effected at the center of the slit and thus produce spraying in two opposite directions, at both ends of the coil.
  • the material to be deposited being supplied mainly by the wall disposed within the coil, the latter may be made of a metal that conducts electricity well, for example copper, which can, if desired, be covered with the material to be deposited.
  • the cost of the coil is reduced, and the few particles that are torn form its surface do not introduce impurities into the deposit produced.
  • the advantages of the invention consist in greater efficiency of the system.
  • the metal to be deposited is ejected in a preferential direction, enabling the deposit to be localized better and losses through the turns of the coil to be avoided; this is particularly advantageous when precious metals, such as gold, platinum or iridium are being deposited.
  • precious metals such as gold, platinum or iridium are being deposited.
  • a thick intermediate wall (a few millimeters) may be used, thereby permitting very long metallization times without its being necessary to open the apparatus and break the vacuum. This is very advantageous in the case of a large series of operations.
  • some materials in particular sintered metals) are much more readily obtainable in the form of sheets than wires.
  • FIGS. 1 and 2 are diagrams showing embodiments of the system according to Specification No. 39140/66.
  • FIGS. 3 and 4 are diagrams of embodiments of this inventron
  • FIG. 5 is a section through a spraying apparatus according to this invention.
  • FIGS. 6 and 7 show variants for the assembly of the conical intermediate wall.
  • FIG. 1 shows a variant of the spraying system described in Specification No. 39140/66.
  • a vacuum chamber 1 receives the articles 2 to be covered.
  • a high-frequency coil 3 made of the material to be sprayed and a conduit 4 for supplying gas having its opening in the proximity of the coil, in this case at its middle, is located within the chamber 1.
  • a pipe 5 is connected to a vacuum pump (not shown).
  • FIG. 2 shows another variant of the system according to Specification No. 39140/66. To cover an elongated article such as a tube -2, it is introduced into the high-frequency solenoid 3.
  • FIGS. 3 and 4 are diagrammatic views of embodiments of the present invention.
  • a wall 6 made of the metal to be sprayed. This wall is slit from end to end at 7 and is connected electrically to the coil at 8, for example by a spot weld or solder.
  • the neutral gas is introduced through the tube 4.
  • the apparatus operates as follows. In the normal operating conditions, plasma forms within the wall 6, and the atomized metal can only escape through the ends of this tubular wall. This results in better directing of the beam and therefore better localization of the deposit produced.
  • the wall It is essential for the wall to be connected electrically to the coil and for it to be slit from end to end. Otherwise it would be heated by direct induction, and the formation of the plasma would be reduced thereby reducing the efficiency of the operation to an unacceptable value.
  • This wall acts as an electromagnetic-field concentrator with respect to the highfrequency coil.
  • FIG. 5 shows a complete spraying unit according to the invention. It shows the vacuum chamber 1, the article 2 to be covered, the high-frequency coil 3, the conduit 4 for supplying the gas, the pipe 5 leading to the vacuum pump (not shown), and the intennediate wall 6 slit from end to end at 7 and connected electrically at 8 to the coil 3.
  • the coil 3 and the intermediate wall 6 made of the material to be deposited have a conical shape, which increases the spraying efficiency.
  • the top portion is easily dismountable; the high-frequency connections 9 and 10 pass through the cover 11 of the vacuum chamber 1 in insulators l2 and 13.
  • the gas inlet 4, provided with a metering valve 14, passes through the cover 11 in an insulator 15.
  • a deflector l6 prevents particles from being flung upwards.
  • the induction coil 3 may be made of copper, for example, which is covered with a layer of the metal to be projected if it is an expensive metal such as gold. Thus the particles torn from the surface of the coil do not impair the purity of the deposit coming mainly from the wall 6.
  • the conical wall 6 must be cooled for example by means of a tube of the same material, such as 17 in FIG. 6.
  • FIG. 7 shows another variant of the apparatus according to the invention.
  • the conical wall 6 is separated from the induction coil 3 by a quartz wall 18, but it is still connected to it electrically at 8. in this case the coil is outside the vacuum chamber 1, which limits to one 19 the number of electric conductors entering the vacuum chamber.
  • Apparatus for depositing a coating on a surface which apparatus includes a vacuum chamber to receive the surface to be coated, means for producing a high-frequency electromagnetic field within the chamber and means for introducing gas into said chamber in the vicinity of said electromagnetic field, wherein the improvement comprises a substantially tubular wall formed of the material to be deposited and disposed within said chamber and within said electromagnetic field, said wall being slit from end to end, and means for electrically connecting said wall to said field producing means.
  • Apparatus for use in depositing a thin layer of conducting or partially conducting material on a surface of a body which apparatus includes a vacuum chamber for receiving said body, a high frequency coil for generating an electromagnetic field located within said chamber and a conduit for supplying gas in the vicinity of said electromagnetic field, wherein the improvement comprises a substantially tubular wall formed of the material to be deposited and disposed within said high frequency coil, said wall being slit from end to end, and means for electrically connecting said wall to said high frequency coil.

Abstract

Apparatus for depositing a thin layer of a conducting or partially conducting material on the surface of a body which includes a vacuum chamber, a high-frequency coil located within the chamber for generating an electromagnetic field and means for supplying gas into the chamber in the vicinity of the electromagnetic field. A substantially tubular wall, which may be in the form of a cylinder or a truncated cone, is disposed within the high-frequency coil and electrically connected thereto. The tubular wall is slit from end to end to prevent heating by direct induction with a consequent reduction in the formation of the plasma and lowering of the efficiency of the coating operation.

Description

United States Patent Inventors Joseph Wurm;
Pierre Beucherle; Michel Block, all of Varese, Italy Appl. No. 766,682
Filed Oct. 11, 1968 Patented Nov. 9, 1971 Assignee European Atomic Energy Community Brussels, Belgium Priority Nov. 10, 1967 Belgium 50663 PROCESS AND DEVICE FOR DEPOSITING ON Kloss et al., Advances in R.F. Induced Plasma Sputtering, SCP and Solid State Technology, Dec. I967, pp. 45- 49, 75.
Primary ExaminerJohn H. Mack Assistant ExaminerNeil A. Kaplan Attorney- Stevens, Davis, Miller & Mosher ABSTRACT: Apparatus for depositing a thin layer of a conducting or partially conducting material on the surface of a body which includes a vacuum chamber, a high frequency coil located within the chamber for generating an electromagnetic field and means for supplying gas into the chamber in the vicinity of the electromagnetic field. A substantially tubular wall, which may be in the form of a cylinder or a truncated cone, is disposed within the high-frequency coil and electrically connected thereto. The tubular wall is slit from end to end to prevent heating by direct induction with a consequent reduction in the formation of the plasma and lowering of the efficiency of the coating operation.
PAIENIEnunv QIQYI 3, 5 1 9,402
sum 1 or 4 PATENTEDNUV 9 Ian SHEET 2 BF 4 PATENTEUN HV 9191i 3.619.402
sum u [If 4 I PROCESS AND DEVICE FOR DEPOSITING ON SURFACES The invention relates to a process and apparatus for coating surfaces and to improvements in or modifications of the invention forming the subject of specification No. 39140/66 (Belgian Specification No. 673939). Specification No. 39140/66 describes a process and an apparatus for depositing on surfaces of all kinds coats of metals or alloys (intermetallic compounds), graphite and all types of conductors or partial or semiconductors. These coats may cover metal, ceramic or plastics surfaces, in the form of noncorrosive protective layers or in the form of a diffusion barrier inside or outside any object, or form electrically conductive or heat-conducting coatings, or coats applied for the purpose of decoration or their appearance. It is possible in carrying out the invention to apply coatings which are conductive or which are compounds not necessarily themselves conductive but having at least one conductive component.
According to this process, the surface to be coated is immersed in a gaseous atmosphere which is constantly renewed and kept at a substantially constant low pressure, this gas being subjected to a high-frequency high voltage electromagnetic field by applicator means that are immersed in the gaseous atmosphere and are made, at least in part, of the material to be deposited or one of its components, so as to ionize the gas and convert it, at least in part, into plasma, whose particles, owing to their agitation, strike the means or part thereof aforesaid for the application of the high-frequency field and tear off them, as a result of the shock produced, small particles of material which, according to whether the gas is inert or reactive, are deposited unchanged or after combination with the gas on the surface to be coated.
The apparatus or device for implementing this process is extremely simple. It comprises essentially a vacuum chamber in which are placed the article to be covered, a high-frequency coil made of the material to be deposited and a conduit for supplying gas, opening in the proximity of the coil.
Although this system for covering surfaces operates effectively, attempts have been made to increase its efiiciency, and the present invention, in fact, relates to improvements in this process and apparatus or device.
According to the invention, a wall formed of the material to be deposited and slit from end to end is disposed within the means for producing the highfrequency field and is connected to it electrically.
The form of this wall plays, of course, an important part. In the simplest embodiment it is cylindrical and slit along a generatrix.
In a more elaborate embodiment, it is in the form of a truncated cone and also slit along a generatrix. In this case the coil surrounding it is also in the form of a truncated cone, i.e. the diameters of its turns vary to produce a conical formation of the coil.
The injection of the neutral gas, which normally takes place at one end of the coil, may, in the case of the cylindrical wall, be effected at the center of the slit and thus produce spraying in two opposite directions, at both ends of the coil.
The material to be deposited being supplied mainly by the wall disposed within the coil, the latter may be made of a metal that conducts electricity well, for example copper, which can, if desired, be covered with the material to be deposited. Thus, in the case of expensive deposits such as gold, the cost of the coil is reduced, and the few particles that are torn form its surface do not introduce impurities into the deposit produced.
The advantages of the invention consist in greater efficiency of the system. The metal to be deposited is ejected in a preferential direction, enabling the deposit to be localized better and losses through the turns of the coil to be avoided; this is particularly advantageous when precious metals, such as gold, platinum or iridium are being deposited. Quite a thick intermediate wall (a few millimeters) may be used, thereby permitting very long metallization times without its being necessary to open the apparatus and break the vacuum. This is very advantageous in the case of a large series of operations. Furthermore, some materials (in particular sintered metals) are much more readily obtainable in the form of sheets than wires.
Various nonlimitative examples, of the process and apparatus according to the invention will now be described with reference to the accompanying drawings and with comparison with examples according to Specification No. 39140/66.
FIGS. 1 and 2 are diagrams showing embodiments of the system according to Specification No. 39140/66.
FIGS. 3 and 4 are diagrams of embodiments of this inventron,
FIG. 5 is a section through a spraying apparatus according to this invention,
FIGS. 6 and 7 show variants for the assembly of the conical intermediate wall.
The figures only show the elements necessary for an understanding of the invention, the corresponding elements of these FIGS. having identical reference numerals.
FIG. 1 shows a variant of the spraying system described in Specification No. 39140/66. A vacuum chamber 1 receives the articles 2 to be covered. A high-frequency coil 3 made of the material to be sprayed and a conduit 4 for supplying gas having its opening in the proximity of the coil, in this case at its middle, is located within the chamber 1. A pipe 5 is connected to a vacuum pump (not shown).
FIG. 2 shows another variant of the system according to Specification No. 39140/66. To cover an elongated article such as a tube -2, it is introduced into the high-frequency solenoid 3.
FIGS. 3 and 4 are diagrammatic views of embodiments of the present invention. Within the high-frequency coil 3 there is disposed a wall 6 made of the metal to be sprayed. This wall is slit from end to end at 7 and is connected electrically to the coil at 8, for example by a spot weld or solder. The neutral gas is introduced through the tube 4.
The apparatus operates as follows. In the normal operating conditions, plasma forms within the wall 6, and the atomized metal can only escape through the ends of this tubular wall. This results in better directing of the beam and therefore better localization of the deposit produced.
It is essential for the wall to be connected electrically to the coil and for it to be slit from end to end. Otherwise it would be heated by direct induction, and the formation of the plasma would be reduced thereby reducing the efficiency of the operation to an unacceptable value. This wall acts as an electromagnetic-field concentrator with respect to the highfrequency coil.
FIG. 5 shows a complete spraying unit according to the invention. It shows the vacuum chamber 1, the article 2 to be covered, the high-frequency coil 3, the conduit 4 for supplying the gas, the pipe 5 leading to the vacuum pump (not shown), and the intennediate wall 6 slit from end to end at 7 and connected electrically at 8 to the coil 3.
This arrangement has two special features. Firstly, the coil 3 and the intermediate wall 6 made of the material to be deposited have a conical shape, which increases the spraying efficiency. Secondly, the top portion is easily dismountable; the high-frequency connections 9 and 10 pass through the cover 11 of the vacuum chamber 1 in insulators l2 and 13. Similarly, the gas inlet 4, provided with a metering valve 14, passes through the cover 11 in an insulator 15. A deflector l6 prevents particles from being flung upwards.
The induction coil 3 may be made of copper, for example, which is covered with a layer of the metal to be projected if it is an expensive metal such as gold. Thus the particles torn from the surface of the coil do not impair the purity of the deposit coming mainly from the wall 6.
ln the case of metals having low melting points, the conical wall 6 must be cooled for example by means of a tube of the same material, such as 17 in FIG. 6.
FIG. 7 shows another variant of the apparatus according to the invention. The conical wall 6 is separated from the induction coil 3 by a quartz wall 18, but it is still connected to it electrically at 8. in this case the coil is outside the vacuum chamber 1, which limits to one 19 the number of electric conductors entering the vacuum chamber.
We claim:
1. Apparatus for depositing a coating on a surface, which apparatus includes a vacuum chamber to receive the surface to be coated, means for producing a high-frequency electromagnetic field within the chamber and means for introducing gas into said chamber in the vicinity of said electromagnetic field, wherein the improvement comprises a substantially tubular wall formed of the material to be deposited and disposed within said chamber and within said electromagnetic field, said wall being slit from end to end, and means for electrically connecting said wall to said field producing means.
2. Apparatus for use in depositing a thin layer of conducting or partially conducting material on a surface of a body, which apparatus includes a vacuum chamber for receiving said body, a high frequency coil for generating an electromagnetic field located within said chamber and a conduit for supplying gas in the vicinity of said electromagnetic field, wherein the improvement comprises a substantially tubular wall formed of the material to be deposited and disposed within said high frequency coil, said wall being slit from end to end, and means for electrically connecting said wall to said high frequency coil.
3. Apparatus as claimed in claim 2, wherein the highfrequency coil, is made of a metal that is a good conductor, and the surface of the coil is covered with the same material as that which is to be deposited.
4. Apparatus as claimed in claim 2, wherein the wall is cylindrical and is slit along a generatrix thereof.
5. Apparatus as claimed in claim 2 wherein the wall is in the form of a truncated cone and is slit along a generatrix thereof.
6. Apparatus as claimed in claim 5, wherein the highfrequency coil, is made of a metal that is a good conductor, and the surface of the coil is covered with the same material as that which is to be deposited.

Claims (5)

  1. 2. Apparatus for use in depositing a thin layer of conducting or partially conducting material on a surface of a body, which apparatus includes a vacuum chamber for receiving said body, a high frequency coil for generating an electromagnetic field located within said chamber and a conduit for supplying gas in the vicinity of said electromagnetic field, wherein the improvement comprises a substantially tubular wall formed of the material to be deposited and disposed within said high frequency coil, said wall being slit from end to end, and means for electrically connecting said wall to said high frequency coil.
  2. 3. Apparatus as claimed in claim 2, wherein the high-frequency coil, is made of a metal that is a good conductor, and the surface of the coil is covered with the same material as that which is to be deposited.
  3. 4. Apparatus as claimed in claim 2 wherein the wall is cylindrical and is slit along a generatrix thereof.
  4. 5. Apparatus as claimed in claim 2 wherein the wall is in the form of a truncated cone and is slit along a generatrix thereof.
  5. 6. Apparatus as claimed in claim 5, wherein the high-frequency coil, is made of a metal that is a good conductor, and the surface of the coil is covered with the same material as that which is to be deposited.
US766682A 1967-11-10 1968-10-11 Process and device for depositing on surfaces Expired - Lifetime US3619402A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT262715D
BE50663 1967-11-10

Publications (1)

Publication Number Publication Date
US3619402A true US3619402A (en) 1971-11-09

Family

ID=25608192

Family Applications (1)

Application Number Title Priority Date Filing Date
US766682A Expired - Lifetime US3619402A (en) 1967-11-10 1968-10-11 Process and device for depositing on surfaces

Country Status (9)

Country Link
US (1) US3619402A (en)
JP (1) JPS4929818B1 (en)
AT (1) AT279994B (en)
DE (1) DE1765850A1 (en)
DK (1) DK131005B (en)
ES (1) ES360009A1 (en)
LU (1) LU57245A1 (en)
NO (1) NO120815B (en)
SE (1) SE347296B (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006070A (en) * 1971-02-05 1977-02-01 Triplex Safety Glass Company Limited Metal oxide films
US4217194A (en) * 1975-12-29 1980-08-12 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Instrument for polarographic potentiometric, thermal and like measurements and a method of making the same
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5391281A (en) * 1993-04-09 1995-02-21 Materials Research Corp. Plasma shaping plug for control of sputter etching
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
US5567261A (en) * 1992-08-06 1996-10-22 Leonhard Kurz Gmbh & Co. Method and apparatus for decorating articles having a conical peripheral surface portion
EP0807954A1 (en) * 1996-05-09 1997-11-19 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
DE19923018A1 (en) * 1999-05-19 2000-11-30 Univ Dresden Tech Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece
US6168690B1 (en) * 1997-09-29 2001-01-02 Lam Research Corporation Methods and apparatus for physical vapor deposition
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6217715B1 (en) * 1997-02-06 2001-04-17 Applied Materials, Inc. Coating of vacuum chambers to reduce pump down time and base pressure
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US20060070875A1 (en) * 1996-05-09 2006-04-06 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US20070194245A1 (en) * 2004-02-04 2007-08-23 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US20080179284A1 (en) * 2004-02-04 2008-07-31 Veeco Instruments Inc. Methods of operating an electromagnet of an ion source

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155009A (en) * 1978-05-26 1979-12-06 Matsushita Electric Ind Co Ltd Wireless transmission/reception stereo system
US4406252A (en) * 1980-12-29 1983-09-27 Rockwell International Corporation Inductive heating arrangement for evaporating thin film alloy onto a substrate
DE3206421A1 (en) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING LAYERS FROM HIGH-MELTING METALS OR METAL COMPOUNDS THROUGH VAPOR PHASE DEPOSITION
JP4677123B2 (en) * 2001-05-31 2011-04-27 株式会社アルバック Apparatus and method for forming dense hard thin film using high-density helicon plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
US3291715A (en) * 1963-08-19 1966-12-13 Litton Systems Inc Apparatus for cathode sputtering including a plasmaconfining chamber
US3451917A (en) * 1966-01-10 1969-06-24 Bendix Corp Radio frequency sputtering apparatus
US3501393A (en) * 1967-05-05 1970-03-17 Litton Systems Inc Apparatus for sputtering wherein the plasma is confined by the target structure
US3540993A (en) * 1965-12-17 1970-11-17 Euratom Sputtering apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
US3291715A (en) * 1963-08-19 1966-12-13 Litton Systems Inc Apparatus for cathode sputtering including a plasmaconfining chamber
US3540993A (en) * 1965-12-17 1970-11-17 Euratom Sputtering apparatus
US3451917A (en) * 1966-01-10 1969-06-24 Bendix Corp Radio frequency sputtering apparatus
US3501393A (en) * 1967-05-05 1970-03-17 Litton Systems Inc Apparatus for sputtering wherein the plasma is confined by the target structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Kloss et al., Advances in R.F. Induced Plasma Sputtering, SCP and Solid State Technology, Dec. 1967, pp. 45 49, 75. *

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006070A (en) * 1971-02-05 1977-02-01 Triplex Safety Glass Company Limited Metal oxide films
US4217194A (en) * 1975-12-29 1980-08-12 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Instrument for polarographic potentiometric, thermal and like measurements and a method of making the same
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
WO1992001082A1 (en) * 1990-07-10 1992-01-23 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
US5529674A (en) * 1990-07-10 1996-06-25 Telic Technologies Corporation Cylindrical hollow cathode/magnetron sputtering system and components thereof
US5567261A (en) * 1992-08-06 1996-10-22 Leonhard Kurz Gmbh & Co. Method and apparatus for decorating articles having a conical peripheral surface portion
US5391281A (en) * 1993-04-09 1995-02-21 Materials Research Corp. Plasma shaping plug for control of sputter etching
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US6297595B1 (en) 1995-11-15 2001-10-02 Applied Materials, Inc. Method and apparatus for generating a plasma
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US20020144901A1 (en) * 1996-05-09 2002-10-10 Jaim Nulman Coils for generating a plasma and for sputtering
US20060070875A1 (en) * 1996-05-09 2006-04-06 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US8398832B2 (en) 1996-05-09 2013-03-19 Applied Materials Inc. Coils for generating a plasma and for sputtering
US20040256217A1 (en) * 1996-05-09 2004-12-23 Jaim Nulman Coils for generating a plasma and for sputtering
US6783639B2 (en) 1996-05-09 2004-08-31 Applied Materials Coils for generating a plasma and for sputtering
EP0807954A1 (en) * 1996-05-09 1997-11-19 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6217715B1 (en) * 1997-02-06 2001-04-17 Applied Materials, Inc. Coating of vacuum chambers to reduce pump down time and base pressure
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6168690B1 (en) * 1997-09-29 2001-01-02 Lam Research Corporation Methods and apparatus for physical vapor deposition
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
DE19923018C2 (en) * 1999-05-19 2001-09-27 Univ Dresden Tech Device for processing band-shaped workpieces using resonant high-frequency plasmas
DE19923018A1 (en) * 1999-05-19 2000-11-30 Univ Dresden Tech Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece
US20070194245A1 (en) * 2004-02-04 2007-08-23 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US20080179284A1 (en) * 2004-02-04 2008-07-31 Veeco Instruments Inc. Methods of operating an electromagnet of an ion source
US7557362B2 (en) 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8158016B2 (en) 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source

Also Published As

Publication number Publication date
DK131005C (en) 1975-11-10
AT279994B (en) 1970-03-25
ES360009A1 (en) 1970-10-16
DK131005B (en) 1975-05-12
SE347296B (en) 1972-07-31
NO120815B (en) 1970-12-07
DE1765850A1 (en) 1971-10-28
JPS4929818B1 (en) 1974-08-07
LU57245A1 (en) 1969-02-11

Similar Documents

Publication Publication Date Title
US3619402A (en) Process and device for depositing on surfaces
US3540993A (en) Sputtering apparatus
US2239642A (en) Coating of articles by means of cathode disintegration
US5656141A (en) Apparatus for coating substrates
US3985635A (en) Apparatus for concurrently sputtering different materials
US4673477A (en) Controlled vacuum arc material deposition, method and apparatus
US5036252A (en) Radio frequency ion beam source
US5580429A (en) Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
US3836451A (en) Arc deposition apparatus
US4448802A (en) Method and apparatus for evaporating material under vacuum using both an arc discharge and electron beam
US3625848A (en) Arc deposition process and apparatus
US3616452A (en) Production of deposits by cathode sputtering
US5298137A (en) Method and apparatus for linear magnetron sputtering
US3305473A (en) Triode sputtering apparatus for depositing uniform coatings
US4951604A (en) System and method for vacuum deposition of thin films
JP3964951B2 (en) Equipment for coating substrates
JPH08505434A (en) Equipment for plasma-assisted fast electron beam evaporation
SE519931C2 (en) Device and method for pulsed, highly ionized magnetron sputtering
EP0064288A1 (en) Method and apparatus for the production and utilization of activated molecular beams
KR100210268B1 (en) Apparatus for coating a substrate from an electrically conductive target
US6277253B1 (en) External coating of tungsten or tantalum or other refractory metal on IMP coils
US3425864A (en) Method for making electric resistance heaters
EP0546006A1 (en) Ion plating method
US3179783A (en) Method and apparatus for treating electrically-conductive surfaces to make them hardor corrosion resistant
US5250779A (en) Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field