US20120068184A1 - Dislocation reduction in non-polar iii-nitride thin films - Google Patents

Dislocation reduction in non-polar iii-nitride thin films Download PDF

Info

Publication number
US20120068184A1
US20120068184A1 US13/308,362 US201113308362A US2012068184A1 US 20120068184 A1 US20120068184 A1 US 20120068184A1 US 201113308362 A US201113308362 A US 201113308362A US 2012068184 A1 US2012068184 A1 US 2012068184A1
Authority
US
United States
Prior art keywords
film
polar iii
mask
polar
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/308,362
Inventor
Michael D. Craven
Steven P. DenBaars
James S. Speck
Shuji Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/413,690 external-priority patent/US7091514B2/en
Application filed by University of California filed Critical University of California
Priority to US13/308,362 priority Critical patent/US20120068184A1/en
Publication of US20120068184A1 publication Critical patent/US20120068184A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Definitions

  • the invention is related to semiconductor materials, methods, and devices, and more particularly, to dislocation reduction in non-polar III-nitride thin films.
  • polarization-induced electric fields affect the performance of current state-of-the-art optoelectronic and electronic nitride devices.
  • the polarization fields spatially separate electron and hole wave functions in quantum well (QW) structures, thereby reducing carrier recombination efficiencies in QW-based devices such as laser diodes and light emitting diodes (LEDs).
  • QW quantum well
  • the polarization fields induce large mobile sheet charge densities in transistor structures which employ nitride heterostructures. Discontinuities in total polarization result in the formation of fixed sheet charges at the corresponding interfaces or surfaces.
  • Non-polar wurtzite nitride semiconductor films provides a promising means of eliminating polarization-induced electric field effects in nitride quantum structures.
  • non-polar (11 2 0) a-plane GaN films (referred to herein as a-GaN) have been grown on (1 1 02) r-plane sapphire substrates via metalorganic chemical vapor deposition (MOCVD). See Reference 13.
  • MOCVD metalorganic chemical vapor deposition
  • the threading dislocation density present in these films has been determined to be approximately 2.6 ⁇ 10 10 cm ⁇ 2 .
  • Lateral overgrowth techniques are well known in the prior art. For example, lateral overgrowth techniques have been thoroughly studied for dislocation reduction of polar c-plane (0001) GaN films. Specific overgrowth techniques include lateral epitaxial overgrowth (LEO), which is also known as epitaxial lateral overgrowth (ELO or ELOG), and PENDEO® epitaxy. Despite the differences between these processes, dislocation reduction is achieved by common mechanisms, primarily mask blocking and dislocation bending. See References 11 and 19.
  • the present invention is a novel application of those methods for non-polar III-nitride films.
  • the present invention describes a LEO method using non-polar III-nitride seed layers that achieves threading dislocation reduction.
  • Low dislocation density non-polar III-nitride films can be used as a buffer layer for high performance, polarization-induced field free (Al, B, In, Ga)N-based devices.
  • Lateral epitaxial overgrowth of non-polar III-nitride thin films reduces threading dislocations in the films.
  • a thin patterned dielectric mask is applied to the seed layer.
  • a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask.
  • the films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
  • FIG. 1 is a flowchart that illustrates the steps for reducing threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer, according to the preferred embodiment of the present invention
  • FIG. 2 is a plan-view scanning electron microscopy (SEM) image montage showing half of an a-GaN LEO wagon wheel pattern;
  • FIGS. 3( a ), ( b ) and ( c ) are a series of SEM images with inclined views of the three stripes oriented parallel to [0001], [ 1 101], and [ 1 100], respectively;
  • FIGS. 4( a ), ( b ) and ( c ) are cross-sectional TEM images of a [ 1 100] stripe.
  • FIGS. 5( a ), ( b ) and ( c ) are plan-view panchromatic CL images of stripes oriented parallel to [0001], [ 1 101], and [ 1 100], while FIG. 5( d ) illustrates the crystallographic orientation for FIGS. 5( a ), ( b ) and ( c ).
  • the present invention reduces threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer.
  • Lateral overgrowth techniques require a processing step between two MOCVD growths, an initial heteroepitaxial growth and a regrowth that constitutes the lateral overgrowth.
  • a thin patterned dielectric mask is applied to the seed layer.
  • the III-nitride initially grows vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction.
  • dislocation densities are reduced in the laterally overgrown regions as compared to the regions that grow vertically through openings in the mask.
  • Dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
  • FIG. 1 is a flowchart that illustrates the steps for reducing threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer, according to the preferred embodiment of the present invention.
  • Block 100 represents growing a non-polar III-nitride thin film on a (1 1 02) r-plane sapphire substrate via MOCVD, as described in U.S. Utility patent application Ser. No. 10/413,691, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” filed on Apr. 15, 2003, by Michael D. Craven and James S. Speck, attorneys docket number 30794.100-US-U1, which application claims the benefit under 35 U.S.C. ⁇ 119(e) of U.S. Provisional Patent Application Ser. No.
  • the heteroepitaxially-grown non-polar III-nitride thin film comprises a “seed layer” for the lateral overgrowth of the present invention.
  • Block 102 represents depositing a dielectric regrowth mask on the non-polar III-nitride thin film via plasma-enhanced chemical vapor deposition (PECVD).
  • PECVD plasma-enhanced chemical vapor deposition
  • the mask is comprised of, but is not limited to, 200 nanometers (nm) of SiO 2 .
  • Block 104 represents patterning the deposited mask, wherein the pattern is transferred to the SiO2 using conventional photolithographic techniques and wet etching with buffered hydrofluoric acid.
  • the deposited mask is patterned with long, narrow stripe openings oriented in a variety of crystallographic directions.
  • Block 106 represents cleaning the sample using solvents.
  • Block 108 represents performing a selective epitaxial regrowth to achieve the lateral overgrowth based on the patterned mask, wherein the III-nitride initially grows vertically through openings in the mask before laterally overgrowing the mask in directions perpendicular to a vertical growth direction. Dislocation densities are reduced in the laterally overgrown regions as compared to regions that grow vertically through openings in the mask. Moreover, dislocations are reduced in the overgrown regions by the mask blocking propagation of dislocations vertically into the growing film and by bending of dislocations through a transition from vertical to lateral growth.
  • the III-nitride has a dislocation density of less than 2.6 ⁇ 10 10 cm ⁇ 2 , and more preferably, the III-nitride has a dislocation density of less than 1 ⁇ 10 8 cm ⁇ 2 .
  • the III-nitride preferably has a stacking fault density less than 3.8 ⁇ 10 5 cm ⁇ 1 .
  • Block 108 uses the same reactor conditions employed for the heteroepitaxial growth on the sapphire substrate, i.e., ⁇ 1100° C. growth temperature, ⁇ 1300 V/III ratio, and ⁇ 0.1 atmospheric (atm) growth pressure, although modified conditions could be used.
  • Block 110 represents the resulting lateral overgrowth, wherein the lateral overgrowth comprises laterally overgrown III-nitride formed stripes, as determined by the underlying mask pattern.
  • the overgrown stripe morphology is dependent on the crystallographic orientation of the mask stripe. For example, stripes aligned to [1 1 00 ] have rectangular cross-sections and exhibit substantial dislocation reduction in the overgrown regions.
  • LDs laser diodes
  • LEDs light emitting diodes
  • RC-LEDs resonant cavity LEDs
  • VCSELs vertical cavity surface emitting lasers
  • HEMTs high electron mobility transistors
  • HBTs heterojunction bipolar transistors
  • HFETs heterojunction field effect transistors
  • TEM transmission electron microscopy
  • CL Cathodoluminescence
  • the stripe morphology was observed using a JEOL 6300TM field emission scanning electron microscope (FE-SEM) operating at 5 kV.
  • FE-SEM field emission scanning electron microscope
  • the microstructure of the lateral overgrowth was studied in cross-section using a JEOL 2000FXTM transmission electron microscope (TEM) operating at 200 kV.
  • TEM transmission electron microscope
  • Cathodoluminescence (CL) images were obtained at room temperature using a Gatan MonoCLTM attached to the JEOL 6300TM FE-SEM and provided spatial maps of the luminescence from the laterally overgrown stripes.
  • the crystallographic orientation of the mask stripe openings dictate the facets that form and, hence, the characteristics of the lateral overgrowth. See Reference 14.
  • the SiO2 mask was patterned with an array of rectangular mask openings (windows) which formed a “wagon wheel” design.
  • the windows that made up the wagon wheel pattern were 5 ⁇ m wide and oriented in 5° intervals so that a range of crystallographic mask orientations could be analyzed in a single MOCVD growth run.
  • This experimental design is similar to that employed for the initial investigations of laterally overgrown c-plane GaN from linear mask openings. See References 14 and 15.
  • FIG. 2 is a plan-view scanning electron microscopy (SEM) image montage showing half of an a-GaN LEO wagon wheel pattern. The angles are included to facilitate reference to the wagon wheel pattern where 0° corresponds to the GaN c-axis [0001].
  • the reduced symmetry of the a-GaN surface (with respect to the c-GaN surface) is apparent in the stripe orientation dependence shown in FIG. 2 , which is a 180° view of a single wagon wheel pattern.
  • this plan-view SEM image shows that lateral overgrowth occurred for all possible stripe orientations.
  • FIG. 2 shows that as the stripe orientation changed from [0001] to [ 1 100], the stripe width increased until a maximum width was reached for stripes aligned 70° off the c-axis. After reaching this maximum, the stripe width decreased until it reached [ 1 100]. Note that specific crystallographic indexing is consistently used throughout this description due to the reduced symmetry of this film/substrate system in comparison to c-GaN.
  • FIGS. 3( a ), ( b ) and ( c ) are a series of SEM images with inclined views of the three stripes oriented parallel to [0001], [ 1 101], and [ 1 100], respectively, wherein the images correspond to the 0°, 45°, and 90° orientation labeling in FIG. 2 (and having a scale bar representing 55 ⁇ m).
  • [0001] and [ 1 101] stripes had various combinations of inclined and vertical sidewalls. Specifically, symmetric morphologies were observed for the [0001] stripes, while the [ 1 101] stripes had asymmetric morphologies with one microfaceted vertical (1 1 02) sidewall and one inclined (1 1 02) sidewall. The [0001] stripes had coexisting vertical and inclined facets from the same crystallographic family of ⁇ 10 1 0 ⁇ planes. Conversely, [ 1 100] stripes had rectangular cross-sections with vertical (0001) basal plane sidewalls. Overall, [0001] and [ 1 100] stripe orientations yielded uniform, symmetric morphologies.
  • FIGS. 4( a ), ( b ) and ( c ) are cross-sectional TEM images of a [ 1 100] stripe, wherein FIG. 4( a ) shows threading dislocation reduction in the asymmetric overgrowth regions.
  • Magnified views of the mask edge region defined by the dashed box in FIG. 4( a ) are shown for FIG. 4( b ) [ 1 100] and FIG. 4( c ) [0001] stripes.
  • the dislocation lines bend from the window region into the overgrowth region for stripes aligned along [0001], while no dislocation bending is observed for [ 1 100] stripes.
  • FIG. 4( a ), ( b ) and ( c ) are bright-field images with various diffraction conditions: FIG.
  • the stripes imaged are from a parallel stripe pattern (and not a wagon wheel pattern), similar morphologies were observed regardless of the mask stripe pattern.
  • Threading dislocation (TD) reduction was observed for LEO stripes aligned along [ 1 100], as shown in the cross-section TEM image in FIG. 4( a ).
  • Mask blocking is the primary dislocation reduction mechanism since no dislocations were observed to bend in the direction of the lateral overgrowth, as shown in FIG. 4( b ).
  • FIG. 4( c ) shows that dislocations propagated into the overgrown regions of stripes aligned along [0001]. Although the precise origin of this dislocation bending is not yet known, the stability of inclined facets for the [0001] stripe orientation might play a key role.
  • FIG. 4( a ) reveals an asymmetry in lateral overgrowth rates for [ 1 100] stripes.
  • the existence of polar c-plane sidewalls explains this asymmetry.
  • one sidewall is the +c plane or Ga-face while the opposing sidewall is the ⁇ c plane or N-face.
  • the Ga-face sidewall grew faster than the N-face sidewall by a factor of ⁇ 10 depending on the growth conditions.
  • the polarity of a-GaN on r-sapphire was previously determined using convergent beam electron diffraction measurements. See Reference 13. Since polarity had such a significant effect on the lateral overgrowth of the [ 1 100] stripes, the asymmetric morphologies observed in FIGS. 2 and 3 may be related to the low symmetry of the structure.
  • FIGS. 5( a ), ( b ) and ( c ) are plan-view panchromatic CL images of stripes oriented parallel to [0001], [ 1 101], and [ 1 100], while FIG. 5( d ) illustrates the crystallographic orientation for FIGS. 5( a ), ( b ) and ( c ).
  • the CL images shown in FIGS. 5( a )-( c ) directly correspond to the stripes imaged by SEM in FIGS.
  • the mottled regions within each stripe orientation define the windows in the SiO 2 mask where TDs have extended unimpeded to the top surface of the LEO stripe.
  • This CL characteristic has been observed in polar GaN LEO stripes. See References 16-18.
  • the mottled area extends across the entire width of the [0001] stripe, which corresponds to the TEM observation of dislocation bending into the laterally overgrown regions for this stripe orientation. Even though the [0001] stripe shown in FIG. 5( a )-( c ) had little lateral overgrowth, CL measurements of wider stripes grown under similar conditions confirmed the dislocation bending observed in FIG. 4( c ).
  • the uniform luminescence from the overgrown regions of [ 1 100] stripes confirms that those areas are relatively free of TDs.
  • the effects of polarity on the lateral overgrowth rates of [ 1 100] stripes are also clearly observed.
  • lateral overgrowth techniques are the dielectric mask specifications and the MOCVD regrowth conditions.
  • a variety of dielectric materials, deposition techniques, and patterning methods can be employed to fabricate effective masks for lateral overgrowth.
  • modifying the orientation, design, and dimensions of the mask pattern will ultimately determine the characteristics of the subsequent lateral overgrowth.
  • Sufficient control of the lateral overgrowth is required in order to achieve dislocation reduction and to completely overgrow the mask such that a planar film is re-formed.
  • the specific details of the lateral overgrowth including lateral-to-vertical growth rate ratio and sidewall facet stability, are controlled via the MOCVD regrowth conditions.
  • MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Fundamental variations in conditions such as growth temperature, growth pressure, VIII ratio, precursor flows, and source materials are potential modifications of this invention.
  • dislocation reduction can also be achieved using alternative overgrowth methods.
  • overgrowth methods For example, cantilever epitaxy, double lateral epitaxial overgrowth (LEO), and SiN nanomasking techniques could be used as alternatives to lateral epitaxial overgrowth.
  • LEO double lateral epitaxial overgrowth
  • SiN nanomasking techniques could be used as alternatives to lateral epitaxial overgrowth.
  • non-polar a-plan GaN thin films are described in the experimental results section above, the same techniques are applicable to non-polar m-plane GaN thin films. Moreover, non-polar InN, AlN, and AlInGaN thin films could be used instead of GaN thin films.
  • substrates other than sapphire substrate could be employed for non-polar GaN growth.
  • substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
  • the present invention describes lateral epitaxial overgrowth of non-polar III-nitride seed layers which results in threading dislocation reduction.
  • a thin patterned dielectric mask is applied to the seed layer.
  • a selective epitaxial regrowth is performed to achieve lateral overgrowth of the patterned mask.
  • the III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Abstract

Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation of U.S. Utility patent application Ser. No. 11/852,908, entitled “DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS,” filed on Sep. 10, 2007, by Michael D. Craven, Steven P. Denbaars, James S. Speck, and Shuji Nakamura, attorneys docket number 30794.245-US-I1, which application is a continuation-in-part of the following application:
  • U.S. Utility patent application Ser. No. 11/472,033, entitled “NON-POLAR (Al, B, In, Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES,” filed on Jun. 21, 2006, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.101-US-D1, now U.S. Pat. No. 7,982,208, issued Jul. 19, 2011, which application is a divisional of U.S. Utility patent application Ser. No. 10/413,690, filed on Apr. 15, 2003, by Michael D. Craven et al., entitled “NON-POLAR (Al, B, In, Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES,” attorney's docket number 30794.101-US-U1, now U.S. Pat. No. 7,091,514, issued Aug. 15, 2006, which claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Patent Application Ser. No. 60/372,909, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” filed on Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. Denbaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.95-US-P1;
  • all of which applications are incorporated by reference herein.
  • This application is related to the following co-pending application:
  • U.S. Utility patent application Ser. No. 10/413,691, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” filed on Apr. 15, 2003, by Michael D. Craven and James S. Speck, attorneys docket number 30794.100-US-U1, which application claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Patent Application Ser. No. 60/372,909, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” filed on Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. Denbaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.95-US-P1;
  • which applications are incorporated by reference herein.
    • 1. FIELD OF THE INVENTION
  • The invention is related to semiconductor materials, methods, and devices, and more particularly, to dislocation reduction in non-polar III-nitride thin films.
    • 2. DESCRIPTION OF THE RELATED ART
  • (Note: This application references a number of different patents, applications and/or publications as indicated throughout the specification by one or more reference numbers. A list of these different publications ordered according to these reference numbers can be found below in the section entitled “References.” Each of these publications is incorporated by reference herein.)
  • Current nitride-based devices employ heterostructures grown along the polar [0001] c-direction, resulting in the formation of strong electrostatic fields parallel to the growth direction. See References 1-7. The “built-in” electrostatic fields are created by fixed sheet charges associated with polarization discontinuities at surfaces and interfaces within c-plane (0001) nitride structures.
  • These polarization-induced electric fields affect the performance of current state-of-the-art optoelectronic and electronic nitride devices. For example, the polarization fields spatially separate electron and hole wave functions in quantum well (QW) structures, thereby reducing carrier recombination efficiencies in QW-based devices such as laser diodes and light emitting diodes (LEDs). Additionally, the polarization fields induce large mobile sheet charge densities in transistor structures which employ nitride heterostructures. Discontinuities in total polarization result in the formation of fixed sheet charges at the corresponding interfaces or surfaces.
  • Epitaxial growth of non-polar wurtzite nitride semiconductor films provides a promising means of eliminating polarization-induced electric field effects in nitride quantum structures. In the related applications identified above, non-polar (11 20) a-plane GaN films (referred to herein as a-GaN) have been grown on (1 102) r-plane sapphire substrates via metalorganic chemical vapor deposition (MOCVD). See Reference 13. However, the threading dislocation density present in these films has been determined to be approximately 2.6×1010 cm−2.
  • To fully realize the advantages of non-polar nitride layers, improvements in epitaxial film quality are necessary, and in particular reductions in dislocation density are necessary. Specifically, improving the crystal quality of these films is fundamental to the realization of high-performance nitride devices which operate free from polarization-induced electric fields.
  • Although a variety of techniques have been demonstrated, dislocation reduction has been extensively studied in laterally overgrown polar GaN films. See References 8-11. Low dislocation density substrates obtained through various lateral overgrowth techniques are directly responsible for the remarkable performance of nitride-based optoelectronics, and most notably, enhanced lifetime continuous wave InGaN laser diodes. See Reference 12.
  • Lateral overgrowth techniques are well known in the prior art. For example, lateral overgrowth techniques have been thoroughly studied for dislocation reduction of polar c-plane (0001) GaN films. Specific overgrowth techniques include lateral epitaxial overgrowth (LEO), which is also known as epitaxial lateral overgrowth (ELO or ELOG), and PENDEO® epitaxy. Despite the differences between these processes, dislocation reduction is achieved by common mechanisms, primarily mask blocking and dislocation bending. See References 11 and 19.
  • However, the present invention is a novel application of those methods for non-polar III-nitride films. Specifically, the present invention describes a LEO method using non-polar III-nitride seed layers that achieves threading dislocation reduction. Low dislocation density non-polar III-nitride films can be used as a buffer layer for high performance, polarization-induced field free (Al, B, In, Ga)N-based devices.
    • SUMMARY OF THE INVENTION
  • Lateral epitaxial overgrowth of non-polar III-nitride thin films reduces threading dislocations in the films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
  • FIG. 1 is a flowchart that illustrates the steps for reducing threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer, according to the preferred embodiment of the present invention;
  • FIG. 2 is a plan-view scanning electron microscopy (SEM) image montage showing half of an a-GaN LEO wagon wheel pattern;
  • FIGS. 3( a), (b) and (c) are a series of SEM images with inclined views of the three stripes oriented parallel to [0001], [ 1101], and [ 1100], respectively;
  • FIGS. 4( a), (b) and (c) are cross-sectional TEM images of a [ 1100] stripe; and
  • FIGS. 5( a), (b) and (c) are plan-view panchromatic CL images of stripes oriented parallel to [0001], [ 1101], and [ 1100], while FIG. 5( d) illustrates the crystallographic orientation for FIGS. 5( a), (b) and (c).
    •  DETAILED DESCRIPTION OF THE INVENTION
  • In the following description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
  • Overview
  • The present invention reduces threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer. Lateral overgrowth techniques require a processing step between two MOCVD growths, an initial heteroepitaxial growth and a regrowth that constitutes the lateral overgrowth. First, a thin patterned dielectric mask is applied to the seed layer. Upon regrowth, the III-nitride initially grows vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. With the proper mask and regrowth conditions, dislocation densities are reduced in the laterally overgrown regions as compared to the regions that grow vertically through openings in the mask. Dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
  • Process Steps
  • FIG. 1 is a flowchart that illustrates the steps for reducing threading dislocation densities in non-polar III-nitride through the lateral overgrowth of a planar heteroepitaxial “seed” layer, according to the preferred embodiment of the present invention.
  • Block 100 represents growing a non-polar III-nitride thin film on a (1 102) r-plane sapphire substrate via MOCVD, as described in U.S. Utility patent application Ser. No. 10/413,691, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” filed on Apr. 15, 2003, by Michael D. Craven and James S. Speck, attorneys docket number 30794.100-US-U1, which application claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Patent Application Ser. No. 60/372,909, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” filed on Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. Denbaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, attorneys docket number 30794.95-US-P1, which applications are incorporated by reference herein. The heteroepitaxially-grown non-polar III-nitride thin film comprises a “seed layer” for the lateral overgrowth of the present invention.
  • Block 102 represents depositing a dielectric regrowth mask on the non-polar III-nitride thin film via plasma-enhanced chemical vapor deposition (PECVD). In the preferred embodiment, the mask is comprised of, but is not limited to, 200 nanometers (nm) of SiO2.
  • Block 104 represents patterning the deposited mask, wherein the pattern is transferred to the SiO2 using conventional photolithographic techniques and wet etching with buffered hydrofluoric acid. Preferably, the deposited mask is patterned with long, narrow stripe openings oriented in a variety of crystallographic directions.
  • After patterning the mask, Block 106 represents cleaning the sample using solvents.
  • Block 108 represents performing a selective epitaxial regrowth to achieve the lateral overgrowth based on the patterned mask, wherein the III-nitride initially grows vertically through openings in the mask before laterally overgrowing the mask in directions perpendicular to a vertical growth direction. Dislocation densities are reduced in the laterally overgrown regions as compared to regions that grow vertically through openings in the mask. Moreover, dislocations are reduced in the overgrown regions by the mask blocking propagation of dislocations vertically into the growing film and by bending of dislocations through a transition from vertical to lateral growth.
  • Preferably, the III-nitride has a dislocation density of less than 2.6×1010cm−2, and more preferably, the III-nitride has a dislocation density of less than 1×108 cm−2. In addition, the III-nitride preferably has a stacking fault density less than 3.8×105 cm−1.
  • Preferably, Block 108 uses the same reactor conditions employed for the heteroepitaxial growth on the sapphire substrate, i.e., ˜1100° C. growth temperature, ˜1300 V/III ratio, and ˜0.1 atmospheric (atm) growth pressure, although modified conditions could be used.
  • Block 110 represents the resulting lateral overgrowth, wherein the lateral overgrowth comprises laterally overgrown III-nitride formed stripes, as determined by the underlying mask pattern. The overgrown stripe morphology is dependent on the crystallographic orientation of the mask stripe. For example, stripes aligned to [1 1 00] have rectangular cross-sections and exhibit substantial dislocation reduction in the overgrown regions.
  • Potential devices that may be manufactured using this method include laser diodes (LDs), light emitting diodes (LEDs), resonant cavity LEDs (RC-LEDs), vertical cavity surface emitting lasers (VCSELs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), heterojunction field effect transistors (HFETs), as well as UV and near-UV photodetectors.
    • EXPERIMENTAL RESULTS
  • Experimental results found that lateral epitaxial overgrowth was successful in reducing the threading dislocation densities of non-polar (11 20) a-plane GaN films. This section reports on the dependence of morphology and defect reduction on crystallographic stripe orientation.
  • Stripes aligned along [0001] and [ 1100], the most favorable a-plane GaN LEO stripe orientations, possessed well-behaved, symmetric morphologies. Threading dislocation reduction via mask blocking was observed by transmission electron microscopy (TEM) for [ 1100] stripes that had optimal rectangular cross-sections. Cathodoluminescence (CL) studies showed increased light emission for the overgrown regions in comparison to the window regions. The extent of lateral overgrowth of these stripes was asymmetric due to the opposing polarities of the vertical c-plane sidewalls. Conversely, threading dislocations propagated into the symmetric overgrown regions of [0001] stripes which possessed coexisting inclined and vertical {10 10} facets.
  • The stripe morphology was observed using a JEOL 6300™ field emission scanning electron microscope (FE-SEM) operating at 5 kV. The microstructure of the lateral overgrowth was studied in cross-section using a JEOL 2000FX™ transmission electron microscope (TEM) operating at 200 kV. Cathodoluminescence (CL) images were obtained at room temperature using a Gatan MonoCL™ attached to the JEOL 6300™ FE-SEM and provided spatial maps of the luminescence from the laterally overgrown stripes.
  • As has been shown for laterally overgrown c-plane GaN, the crystallographic orientation of the mask stripe openings dictate the facets that form and, hence, the characteristics of the lateral overgrowth. See Reference 14. To investigate the orientation dependence of the laterally overgrown a-GaN, the SiO2 mask was patterned with an array of rectangular mask openings (windows) which formed a “wagon wheel” design. The windows that made up the wagon wheel pattern were 5 μm wide and oriented in 5° intervals so that a range of crystallographic mask orientations could be analyzed in a single MOCVD growth run. This experimental design is similar to that employed for the initial investigations of laterally overgrown c-plane GaN from linear mask openings. See References 14 and 15.
  • FIG. 2 is a plan-view scanning electron microscopy (SEM) image montage showing half of an a-GaN LEO wagon wheel pattern. The angles are included to facilitate reference to the wagon wheel pattern where 0° corresponds to the GaN c-axis [0001]. The reduced symmetry of the a-GaN surface (with respect to the c-GaN surface) is apparent in the stripe orientation dependence shown in FIG. 2, which is a 180° view of a single wagon wheel pattern. Primarily, this plan-view SEM image shows that lateral overgrowth occurred for all possible stripe orientations. Upon closer inspection, three stripe orientations had uniform morphologies without faceted sidewalls: parallel to [0001], 45° off, and perpendicular to the GaN c-axis (stripes parallel to the [ 1100] direction). The stripes oriented 45° off the c-axis are indexed as [ 1101] stripes since this crystallographic direction makes a 46.8° angle with the c-axis. FIG. 2 shows that as the stripe orientation changed from [0001] to [ 1100], the stripe width increased until a maximum width was reached for stripes aligned 70° off the c-axis. After reaching this maximum, the stripe width decreased until it reached [ 1100]. Note that specific crystallographic indexing is consistently used throughout this description due to the reduced symmetry of this film/substrate system in comparison to c-GaN.
  • An additional perspective is required to clearly observe the effects of stripe orientation on a-GaN LEO morphology. FIGS. 3( a), (b) and (c) are a series of SEM images with inclined views of the three stripes oriented parallel to [0001], [ 1101], and [ 1100], respectively, wherein the images correspond to the 0°, 45°, and 90° orientation labeling in FIG. 2 (and having a scale bar representing 55 μm).
  • For the growth conditions employed, [0001] and [ 1101] stripes had various combinations of inclined and vertical sidewalls. Specifically, symmetric morphologies were observed for the [0001] stripes, while the [ 1101] stripes had asymmetric morphologies with one microfaceted vertical (1 102) sidewall and one inclined (1 102) sidewall. The [0001] stripes had coexisting vertical and inclined facets from the same crystallographic family of {10 10} planes. Conversely, [ 1100] stripes had rectangular cross-sections with vertical (0001) basal plane sidewalls. Overall, [0001] and [ 1100] stripe orientations yielded uniform, symmetric morphologies.
  • FIGS. 4( a), (b) and (c) are cross-sectional TEM images of a [ 1100] stripe, wherein FIG. 4( a) shows threading dislocation reduction in the asymmetric overgrowth regions. Magnified views of the mask edge region defined by the dashed box in FIG. 4( a) are shown for FIG. 4( b) [ 1100] and FIG. 4( c) [0001] stripes. The dislocation lines bend from the window region into the overgrowth region for stripes aligned along [0001], while no dislocation bending is observed for [ 1100] stripes. FIG. 4( a), (b) and (c) are bright-field images with various diffraction conditions: FIG. 4( a) g=11 20, FIG. 4( b) g=0006, and FIG. 4( c) g=01 10. Although the stripes imaged are from a parallel stripe pattern (and not a wagon wheel pattern), similar morphologies were observed regardless of the mask stripe pattern.
  • Threading dislocation (TD) reduction was observed for LEO stripes aligned along [ 1100], as shown in the cross-section TEM image in FIG. 4( a). Mask blocking is the primary dislocation reduction mechanism since no dislocations were observed to bend in the direction of the lateral overgrowth, as shown in FIG. 4( b). Unlike [ 1100] stripes, FIG. 4( c) shows that dislocations propagated into the overgrown regions of stripes aligned along [0001]. Although the precise origin of this dislocation bending is not yet known, the stability of inclined facets for the [0001] stripe orientation might play a key role.
  • In addition to TD reduction, FIG. 4( a) reveals an asymmetry in lateral overgrowth rates for [ 1100] stripes. The existence of polar c-plane sidewalls explains this asymmetry. With the polar axis perpendicular to the stripe direction, one sidewall is the +c plane or Ga-face while the opposing sidewall is the −c plane or N-face. As expected, the Ga-face sidewall grew faster than the N-face sidewall by a factor of ˜10 depending on the growth conditions. Note that the polarity of a-GaN on r-sapphire was previously determined using convergent beam electron diffraction measurements. See Reference 13. Since polarity had such a significant effect on the lateral overgrowth of the [ 1100] stripes, the asymmetric morphologies observed in FIGS. 2 and 3 may be related to the low symmetry of the structure.
  • Additional evidence of the lateral overgrowth asymmetry for polar GaN was supplied by plan-view panchromatic CL images of [0001], [ 1101], and [ 1100] LEO stripes. FIGS. 5( a), (b) and (c) are plan-view panchromatic CL images of stripes oriented parallel to [0001], [ 1101], and [ 1100], while FIG. 5( d) illustrates the crystallographic orientation for FIGS. 5( a), (b) and (c). The CL images shown in FIGS. 5( a)-(c) directly correspond to the stripes imaged by SEM in FIGS. 3( a), (b) and (c) (and having a scale bar representing 55 μm). The mottled regions within each stripe orientation define the windows in the SiO2 mask where TDs have extended unimpeded to the top surface of the LEO stripe. This CL characteristic has been observed in polar GaN LEO stripes. See References 16-18. The mottled area extends across the entire width of the [0001] stripe, which corresponds to the TEM observation of dislocation bending into the laterally overgrown regions for this stripe orientation. Even though the [0001] stripe shown in FIG. 5( a)-(c) had little lateral overgrowth, CL measurements of wider stripes grown under similar conditions confirmed the dislocation bending observed in FIG. 4( c). The uniform luminescence from the overgrown regions of [ 1100] stripes confirms that those areas are relatively free of TDs. The effects of polarity on the lateral overgrowth rates of [ 1100] stripes are also clearly observed.
  • In summary, LEO of non-polar (11 20) a-plane GaN films was demonstrated and TD density reduction was achieved. The low symmetry a-GaN surface exhibited LEO stripe morphologies that were dependent on crystallographic stripe alignment. Two primary orientations, [0001] and [ 1100], were observed to possess uniform, symmetric stripe morphologies; [ 1100] stripes had vertical sidewalls while [0001] stripes had coexisting vertical and inclined sidewalls. Dislocation reduction was achieved in [ 1100] stripes while dislocations propagated into the laterally overgrown regions of [0001] stripes. Between the [0001] and [ 1100] orientations, asymmetric stripe morphologies were observed. Except for stripes, which had a non-polar lateral growth direction, all stripes exhibited asymmetric lateral growth rates. Ongoing investigations continue to explore the unique structural features of non-polar GaN LEO.
    • REFERENCES
  • The following references are incorporated by reference herein:
    • 1. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, J. Appl. Phys. 86, 4520 (1999).
    • 2. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
    • 3. I. J. Seo, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
    • 4. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999).
    • 5. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Phys. Rev. B 59, 15363 (1999).
    • 6. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001).
    • 7. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).
    • 8. T. S. Zheleva, N. Ok-Hyun, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
    • 9. N. Ok-Hyun, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
    • 10. H. Marchand, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. DenBaars, J. S. Speck, and U. K. Mishra, MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).
    • 11. H. Marchand, X. H. Wu, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 747 (1998).
    • 12. S. Nakamura, M. Senoh, S. I. Nagahama, T. Matsushita, K. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and T. Mukai, Jpn. J. Appl. Phys., Part 2 38, L226 (1999).
    • 13. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
    • 14. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
    • 15. J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, Appl. Phys. Lett. 73, 333 (1998).
    • 16. S. J. Rosner, G. Girolami, H. Marchand, P. T. Fini, J. P. Ibbetson, L. Zhao, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 74, 2035 (1999).
    • 17. J. A. Freitas, Jr., N. Ok-Hyun, R. F. Davis, G. V. Saparin, and S. K. Obyden, Appl. Phys. Lett. 72, 2990 (1998).
    • 18. Z. Yu, M. A. L. Johnson, J. D. Brown, N. A. El-Masry, J. F. Muth, J. W. Cook, Jr., J. F. Schetzina, K. W. Haberern, H. S. Kong, and J. A. Edmond, MRS Internet J. Nitride Semicond. Res. 4S1, G4.3 (1999).
    • 19. T. S. Zheleva, S. A. Smith, D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, E. Carlson, W. M. Ashmawi, and R. F. Davis, MRS Internet Journal of Nitride Semiconductor Research 4S1 (1999).
    CONCLUSION
  • This concludes the description of the preferred embodiment of the present invention. The following describes some alternative embodiments for accomplishing the present invention.
  • The crucial aspects of lateral overgrowth techniques are the dielectric mask specifications and the MOCVD regrowth conditions. A variety of dielectric materials, deposition techniques, and patterning methods can be employed to fabricate effective masks for lateral overgrowth. In addition, modifying the orientation, design, and dimensions of the mask pattern will ultimately determine the characteristics of the subsequent lateral overgrowth. Sufficient control of the lateral overgrowth is required in order to achieve dislocation reduction and to completely overgrow the mask such that a planar film is re-formed. The specific details of the lateral overgrowth, including lateral-to-vertical growth rate ratio and sidewall facet stability, are controlled via the MOCVD regrowth conditions. MOCVD growth conditions are reactor dependent and may vary between specific reactor designs. Fundamental variations in conditions such as growth temperature, growth pressure, VIII ratio, precursor flows, and source materials are potential modifications of this invention.
  • In addition, the dislocation reduction can also be achieved using alternative overgrowth methods. For example, cantilever epitaxy, double lateral epitaxial overgrowth (LEO), and SiN nanomasking techniques could be used as alternatives to lateral epitaxial overgrowth.
  • Further, although non-polar a-plan GaN thin films are described in the experimental results section above, the same techniques are applicable to non-polar m-plane GaN thin films. Moreover, non-polar InN, AlN, and AlInGaN thin films could be used instead of GaN thin films.
  • Finally, substrates other than sapphire substrate could be employed for non-polar GaN growth. These substrates include silicon carbide, gallium nitride, silicon, zinc oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, and lithium gallate.
  • In summary, the present invention describes lateral epitaxial overgrowth of non-polar III-nitride seed layers which results in threading dislocation reduction. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve lateral overgrowth of the patterned mask. Upon regrowth, the III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
  • The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.

Claims (22)

What is claimed is:
1. A non-polar III-nitride thin film comprising a non-polar III-nitride layer disposed on a pattern mask.
2. The film of claim 1, wherein the pattern mask comprises a blocking region and a window region.
3. The film of claim 1, wherein the pattern mask has a long and narrow stripe pattern.
4. The film of claim 1, wherein the non-polar III-nitride layer comprises an asymmetric growth region.
5. The film of claim 4, wherein the asymmetric growth region comprises facing opposing polarities of growth on a c-plane side wall.
6. The film of claim 5, wherein the opposing polarities are +c-plane and −c-plane.
7. The film of claim 5, wherein the opposing polarities are Ga face and N-face.
8. The film of claim 7, wherein the asymmetric growth region comprises a longer Ga face region than an N face region.
9. The film of claim 4, wherein the non-polar III-nitride layer comprises a threading dislocation parallel to the pattern mask.
10. The film of claim 9, wherein the non-polar III-nitride layer comprises a bent threading dislocation from vertical to lateral with respect to the pattern mask.
11. The film of claim 4, wherein the asymmetric growth region is perpendicular to the pattern mask.
12. The film of claim 1, wherein the non-polar III-nitride layer comprises a symmetric growth region parallel to pattern mask.
13. The film of claim 1, wherein the pattern mask is aligned along a [−1100] direction.
14. The film of claim 1, wherein the pattern mask is aligned along a [0001] direction.
15. The film of claim 1, wherein the pattern mask is aligned between [0001] and [−1100] directions.
16. The film of claim 1, wherein the pattern mask is aligned along a [−1101] direction.
17. The film of claim 1, wherein the non-polar III-nitride layer is a [11-20] a-plane non-polar GaN layer.
18. The film of claim 1, wherein the non-polar III-nitride layer is disposed on a substrate.
19. The film of claim 18, wherein the substrate is r-plane sapphire.
20. The film of claim 18, wherein a seed layer is disposed between the non-polar III-nitride layer and the substrate.
21. A method for fabricating a non-polar III-nitride thin film comprising depositing a non-polar III-nitride layer on a pattern mask.
22. A non-polar III-nitride thin film fabricated using the method of claim 21.
US13/308,362 2002-04-15 2011-11-30 Dislocation reduction in non-polar iii-nitride thin films Abandoned US20120068184A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/308,362 US20120068184A1 (en) 2002-04-15 2011-11-30 Dislocation reduction in non-polar iii-nitride thin films

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37290902P 2002-04-15 2002-04-15
US10/413,690 US7091514B2 (en) 2002-04-15 2003-04-15 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US11/472,033 US7982208B2 (en) 2002-04-15 2006-06-21 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US11/852,908 US8809867B2 (en) 2002-04-15 2007-09-10 Dislocation reduction in non-polar III-nitride thin films
US13/308,362 US20120068184A1 (en) 2002-04-15 2011-11-30 Dislocation reduction in non-polar iii-nitride thin films

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/852,908 Continuation US8809867B2 (en) 2002-04-15 2007-09-10 Dislocation reduction in non-polar III-nitride thin films

Publications (1)

Publication Number Publication Date
US20120068184A1 true US20120068184A1 (en) 2012-03-22

Family

ID=46329301

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/852,908 Expired - Lifetime US8809867B2 (en) 2002-04-15 2007-09-10 Dislocation reduction in non-polar III-nitride thin films
US13/308,362 Abandoned US20120068184A1 (en) 2002-04-15 2011-11-30 Dislocation reduction in non-polar iii-nitride thin films

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/852,908 Expired - Lifetime US8809867B2 (en) 2002-04-15 2007-09-10 Dislocation reduction in non-polar III-nitride thin films

Country Status (1)

Country Link
US (2) US8809867B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956404A (en) * 2014-04-03 2014-07-30 苏州北鹏光电科技有限公司 Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector
US10301743B2 (en) * 2015-02-06 2019-05-28 Mitsubishi Chemical Corporation GaN single crystal and method for manufacturing GaN single crystal

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193020B2 (en) 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
WO2008060349A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
WO2009015350A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and templates grown by the methods
JP2012530027A (en) * 2009-06-15 2012-11-29 コリア エレクトロニクス テクノロジ インスティチュート Heterogeneous substrate, nitride semiconductor device using the same, and manufacturing method thereof
EP2752894A3 (en) 2011-08-09 2014-10-22 Panasonic Corporation Semiconductor light-emitting device and light source device including the same
SG11201406151TA (en) * 2012-03-29 2014-10-30 Agency Science Tech & Res Iii-nitride high electron mobility transistor structures and methods for fabrication of same
TW201443255A (en) * 2013-05-13 2014-11-16 Univ Nat Taiwan Method for producing gallium nitride

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153010A (en) * 1997-04-11 2000-11-28 Nichia Chemical Industries Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
US20010053618A1 (en) * 2000-06-19 2001-12-20 Tokuya Kozaki Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6720586B1 (en) * 1999-11-15 2004-04-13 Matsushita Electric Industrial Co., Ltd. Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
US20050214992A1 (en) * 2002-12-16 2005-09-29 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US20080032478A1 (en) * 2006-08-02 2008-02-07 Hudait Mantu K Stacking fault and twin blocking barrier for integrating III-V on Si
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode

Family Cites Families (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939557A (en) * 1989-02-15 1990-07-03 Varian Associates, Inc. (110) GaAs microwave FET
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP3599896B2 (en) * 1995-05-19 2004-12-08 三洋電機株式会社 Semiconductor laser device and method for manufacturing semiconductor laser device
JP2839077B2 (en) * 1995-06-15 1998-12-16 日本電気株式会社 Gallium nitride based compound semiconductor light emitting device
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US5923950A (en) * 1996-06-14 1999-07-13 Matsushita Electric Industrial Co., Inc. Method of manufacturing a semiconductor light-emitting device
US5784187A (en) * 1996-07-23 1998-07-21 Lucent Technologies Inc. Wafer level integration of an optical modulator and III-V photodetector
US6177292B1 (en) * 1996-12-05 2001-01-23 Lg Electronics Inc. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
JP3488587B2 (en) * 1997-01-09 2004-01-19 株式会社東芝 Boost circuit and IC card having the same
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JP3813740B2 (en) 1997-07-11 2006-08-23 Ｔｄｋ株式会社 Substrates for electronic devices
US5926726A (en) * 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3955367B2 (en) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Optical semiconductor device and manufacturing method thereof
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
JP2000058917A (en) * 1998-08-07 2000-02-25 Pioneer Electron Corp Iii-group nitride semiconductor light-emitting device and its manufacture
US6271104B1 (en) * 1998-08-10 2001-08-07 Mp Technologies Fabrication of defect free III-nitride materials
JP2000068609A (en) 1998-08-24 2000-03-03 Ricoh Co Ltd Semiconductor substrate and semiconductor laser
JP3592553B2 (en) * 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
WO2000033388A1 (en) * 1998-11-24 2000-06-08 Massachusetts Institute Of Technology METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES
JP2000216497A (en) 1999-01-22 2000-08-04 Sanyo Electric Co Ltd Semiconductor element and its manufacture
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
JP3754226B2 (en) * 1999-03-25 2006-03-08 三洋電機株式会社 Semiconductor light emitting device
JP3587081B2 (en) * 1999-05-10 2004-11-10 豊田合成株式会社 Method of manufacturing group III nitride semiconductor and group III nitride semiconductor light emitting device
JP2001007394A (en) 1999-06-18 2001-01-12 Ricoh Co Ltd Semiconductor substrate, manufacture thereof and semiconductor light emitting element
JP4329166B2 (en) 1999-06-23 2009-09-09 昭和電工株式会社 Group III nitride semiconductor optical device
JP3857467B2 (en) 1999-07-05 2006-12-13 独立行政法人科学技術振興機構 Gallium nitride compound semiconductor and manufacturing method thereof
US6265089B1 (en) * 1999-07-15 2001-07-24 The United States Of America As Represented By The Secretary Of The Navy Electronic devices grown on off-axis sapphire substrate
US6268621B1 (en) * 1999-08-03 2001-07-31 International Business Machines Corporation Vertical channel field effect transistor
US6590336B1 (en) * 1999-08-31 2003-07-08 Murata Manufacturing Co., Ltd. Light emitting device having a polar plane piezoelectric film and manufacture thereof
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
JP2001160656A (en) 1999-12-01 2001-06-12 Sharp Corp Nitride compound semiconductor device
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6653663B2 (en) * 1999-12-06 2003-11-25 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device
KR100388011B1 (en) * 2000-01-17 2003-06-18 삼성전기주식회사 SAW Filter by GaN single crystal thin film and A Method for Manufacturing It
US6566231B2 (en) * 2000-02-24 2003-05-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region
JP3557441B2 (en) 2000-03-13 2004-08-25 日本電信電話株式会社 Nitride semiconductor substrate and method of manufacturing the same
US6447604B1 (en) 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3946427B2 (en) 2000-03-29 2007-07-18 株式会社東芝 Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate
JP2001298215A (en) 2000-04-14 2001-10-26 Nichia Chem Ind Ltd Light-emitting element
US6534332B2 (en) * 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
KR20010103998A (en) * 2000-05-12 2001-11-24 이계안 Curren leakage preventy system and method for hybrid electric vehicle
GB2363518A (en) * 2000-06-17 2001-12-19 Sharp Kk A method of growing a nitride layer on a GaN substrate
JP3968968B2 (en) * 2000-07-10 2007-08-29 住友電気工業株式会社 Manufacturing method of single crystal GaN substrate
US6680959B2 (en) * 2000-07-18 2004-01-20 Rohm Co., Ltd. Semiconductor light emitting device and semiconductor laser
JP4556300B2 (en) * 2000-07-18 2010-10-06 ソニー株式会社 Crystal growth method
US6610144B2 (en) * 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films
JP4327339B2 (en) 2000-07-28 2009-09-09 独立行政法人物質・材料研究機構 Semiconductor layer forming substrate and semiconductor device using the same
EP2276059A1 (en) * 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
US6586819B2 (en) * 2000-08-14 2003-07-01 Nippon Telegraph And Telephone Corporation Sapphire substrate, semiconductor device, electronic component, and crystal growing method
JP2002076521A (en) 2000-08-30 2002-03-15 Nippon Telegr & Teleph Corp <Ntt> Nitride semiconductor light emitting element
JP4154558B2 (en) 2000-09-01 2008-09-24 日本電気株式会社 Semiconductor device
JP2002100838A (en) 2000-09-21 2002-04-05 Sharp Corp Nitride semiconductor light-emitting element and optical device
KR100550158B1 (en) 2000-09-21 2006-02-08 샤프 가부시키가이샤 Nitride Semiconductor Light Emitting Element and Optical Device Containing it
JP2002111134A (en) * 2000-09-29 2002-04-12 Toshiba Corp Semiconductor laser device
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6635901B2 (en) * 2000-12-15 2003-10-21 Nobuhiko Sawaki Semiconductor device including an InGaAIN layer
US6599362B2 (en) * 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
US6882051B2 (en) * 2001-03-30 2005-04-19 The Regents Of The University Of California Nanowires, nanostructures and devices fabricated therefrom
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US6627551B2 (en) * 2001-06-06 2003-09-30 United Microelectronics Corp. Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process
AU2002328130B2 (en) 2001-06-06 2008-05-29 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP4055503B2 (en) 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
JP4111696B2 (en) 2001-08-08 2008-07-02 三洋電機株式会社 Nitride semiconductor laser device
JP2003060298A (en) 2001-08-08 2003-02-28 Nichia Chem Ind Ltd Semiconductor light-emitting device and method of manufacturing the same
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP4388720B2 (en) 2001-10-12 2009-12-24 住友電気工業株式会社 Manufacturing method of semiconductor light emitting device
CA2464083C (en) * 2001-10-26 2011-08-02 Ammono Sp. Z O.O. Substrate for epitaxy
KR100679387B1 (en) * 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. Nitride semiconductor laser devise and manufacturing method thereof
US6617261B2 (en) * 2001-12-18 2003-09-09 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US6969426B1 (en) * 2002-02-26 2005-11-29 Bliss David F Forming improved metal nitrides
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
WO2004061969A1 (en) 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
KR101288489B1 (en) * 2002-04-15 2013-07-26 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
SG130935A1 (en) * 2002-06-26 2007-04-26 Agency Science Tech & Res Method of cleaving gan/sapphire for forming laser mirror facets
JP4201541B2 (en) 2002-07-19 2008-12-24 豊田合成株式会社 Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
WO2004084275A2 (en) * 2003-03-18 2004-09-30 Crystal Photonics, Incorporated Method for making group iii nitride devices and devices produced thereby
EP1697965A4 (en) 2003-04-15 2011-02-09 Univ California NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS
US7170095B2 (en) 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
JP4396816B2 (en) * 2003-10-17 2010-01-13 日立電線株式会社 Group III nitride semiconductor substrate and manufacturing method thereof
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7303632B2 (en) 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
JP4883931B2 (en) 2005-04-26 2012-02-22 京セラ株式会社 Manufacturing method of semiconductor laminated substrate
TW200610150A (en) 2004-08-30 2006-03-16 Kyocera Corp Sapphire baseplate, epitaxial substrate and semiconductor device
JP5113330B2 (en) 2005-11-30 2013-01-09 ローム株式会社 Gallium nitride semiconductor light emitting device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153010A (en) * 1997-04-11 2000-11-28 Nichia Chemical Industries Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
US6720586B1 (en) * 1999-11-15 2004-04-13 Matsushita Electric Industrial Co., Ltd. Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US20010053618A1 (en) * 2000-06-19 2001-12-20 Tokuya Kozaki Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US7208393B2 (en) * 2002-04-15 2007-04-24 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US20050214992A1 (en) * 2002-12-16 2005-09-29 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US20080032478A1 (en) * 2006-08-02 2008-02-07 Hudait Mantu K Stacking fault and twin blocking barrier for integrating III-V on Si
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956404A (en) * 2014-04-03 2014-07-30 苏州北鹏光电科技有限公司 Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector
US10301743B2 (en) * 2015-02-06 2019-05-28 Mitsubishi Chemical Corporation GaN single crystal and method for manufacturing GaN single crystal
US11001940B2 (en) 2015-02-06 2021-05-11 Mitsubishi Chemical Corporation GaN single crystal and method for manufacturing GaN single crystal
US11591715B2 (en) 2015-02-06 2023-02-28 Mitsubishi Chemical Corporation GaN single crystal and method for manufacturing GaN single crystal

Also Published As

Publication number Publication date
US8809867B2 (en) 2014-08-19
US20080135853A1 (en) 2008-06-12

Similar Documents

Publication Publication Date Title
US6900070B2 (en) Dislocation reduction in non-polar gallium nitride thin films
US20120068184A1 (en) Dislocation reduction in non-polar iii-nitride thin films
Craven et al. Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
US8652918B2 (en) Nitride semiconductor structure
JP4743214B2 (en) Semiconductor device and manufacturing method thereof
US6809351B2 (en) Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same
US6610144B2 (en) Method to reduce the dislocation density in group III-nitride films
US6599362B2 (en) Cantilever epitaxial process
JP3139445B2 (en) GaN-based semiconductor growth method and GaN-based semiconductor film
KR101332391B1 (en) Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US9412586B2 (en) Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer
EP1182697A2 (en) Sapphire substrate, semiconductor device, electronic component, and crystal growing method
WO2010023846A1 (en) Semiconductor substrate and method for manufacturing the same
JP2009147305A (en) Method of growing semi-polar nitride single crystal thin film, and method of manufacturing nitride semiconductor light emitting element using the same
US20040227152A1 (en) Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
JP3934320B2 (en) GaN-based semiconductor device and manufacturing method thereof
JP4158760B2 (en) GaN-based semiconductor film and method for manufacturing the same

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION