US20110266589A1 - Light Emitting Diode Package Structure and Manufacturing Method Therefor - Google Patents
Light Emitting Diode Package Structure and Manufacturing Method Therefor Download PDFInfo
- Publication number
- US20110266589A1 US20110266589A1 US13/183,439 US201113183439A US2011266589A1 US 20110266589 A1 US20110266589 A1 US 20110266589A1 US 201113183439 A US201113183439 A US 201113183439A US 2011266589 A1 US2011266589 A1 US 2011266589A1
- Authority
- US
- United States
- Prior art keywords
- light
- emitting diode
- light transmission
- insulation material
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present disclosure relates to a light emitting diode (LED) package structure and a manufacturing method therefor, and more particularly, to a transparent LED package structure and a manufacturing method therefor.
- LED light emitting diode
- LED advertising signboards are one type of the most popular advertising signboards.
- advertising signboards are mounted on elevated and noticeable areas or people-crowded areas, and thus the advertising signboards are often mounted on the glass curtain walls of high-rise buildings.
- an LED advertising signboard is generally composed of a plurality of LED units through which very little light is allowed to pass, the LED advertising signboard will block the ambient light passing through a glass curtain wall of a building when being mounted on the glass curtain wall. As a result, ambient light cannot easily enter the building from the outside.
- An objective of the present disclosure is to provide a transparent LED package structure and a manufacturing method therefor, thereby overcoming the aforementioned problems.
- a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
- the first light transmission insulation material may comprise transparent epoxy or silicone.
- the second light transmission insulation material may comprise transparent epoxy or silicone.
- the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
- the manufacturing method may further perform a solder resisting step that coats a solder mask on a bottom side of the lead frame.
- the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
- a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a solder resisting step that coats a solder mask on a bottom side of the lead frame; and perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue.
- the first light transmission insulation material may transparent epoxy or silicone.
- the manufacturing method may further encapsulate the at least one light-emitting diode chip with a second light transmission insulation material.
- the second light transmission insulation material may comprise transparent epoxy or silicone.
- the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
- the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
- the manufacturing method may perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
- a light emitting diode package may comprise: a light transmission substrate having a central portion and a peripheral portion surrounding the central portion; at least one light-emitting diode chip disposed on the central portion of the light transmission substrate; a lead frame connecting the peripheral portion of the light transmission substrate, wherein the lead frame is electrically connected to the light-emitting diode chip; and an encapsulant disposed on the light transparent substrate, wherein the encapsulant covers the at least one light-emitting diode chip and the lead frame.
- the light transmission substrate may comprise transparent epoxy or silicone.
- the encapsulant may comprise transparent epoxy or silicone.
- the encapsulant and the light transmission substrate may be formed from the same material.
- the light emitting diode package may further comprise a light transmission glue that bonds the at least one light-emitting diode chip on the light transmission substrate.
- the light emitting diode package may further comprise a plurality of conducting wires or bumps electrically connecting the at least one light-emitting diode chip to the lead frame.
- the light emitting diode package may further comprise a solder mask coated on a first side of the lead frame opposite from a second side of the lead frame that is on a same side of the light transmission substrate as the at least one light-emitting diode chip.
- FIGS. 1A-1F are cross sectional schematic diagrams showing a flow process for manufacturing a transparent LED package structure according to a first embodiment of the present disclosure.
- FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure.
- FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure.
- FIG. 1A to FIG. 1E are cross sectional schematic diagrams showing a manufacturing method of an LED package structure according to a first embodiment of the present disclosure.
- FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure.
- a heating step 152 is first performed to heat a first transparent plastic material to cause it to become a sticky member 102 , and the sticky member 102 is used as a substrate in the transparent LED package.
- epoxy or silicone material is placed on a processing stage to form a board, and then the board is heated. It is noted that the sticky member 102 is transparent.
- a connecting step 154 is then performed in which a lead frame 108 is placed on the sticky member 102 so as to be connected with the sticky member 102 , as shown in FIG. 1B and FIG. 2 .
- a chip-bonding step 156 is performed in which transparent chip-bonding glue 106 is used to bond a transparent LED 104 on the sticky member 102 , as shown in FIG. 10 and FIG. 2 .
- a wire-bonding step 158 is then performed to electrically connect the lead frame 108 to the transparent LED 104 via a plurality of conducting wires 110 , as shown in FIG. 1D and FIG. 2 .
- an encapsulating step 160 is performed in which a second transparent plastic material 112 is used to encapsulate the transparent LED 104 to increase the brightness of the transparent LED 104 , as shown in FIG. 1E and FIG. 2 .
- a drying step 162 is then performed in which the sticky member 102 and the second transparent plastic material 112 are dried to form a transparent substrate and an encapsulant, as shown in FIG. 1E and FIG. 2 .
- the area occupied by the lead frame 108 is very small, so that the LED package can be a transparent structure.
- the drying step 162 can be simplified, and the manufacturing method can be speeded up thereby.
- FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure.
- the manufacturing method 250 is similar to the manufacturing method 150 , but the difference is that the manufacturing method 250 further comprises a solder resisting step 256 .
- FIG. 1F is a cross section diagram showing a transparent LED package structure in the solder resisting step 256 .
- a solder mask 210 is coated on the bottom side of the lead frame 108 to prevent defects from being produced in a soldering step.
- the solder resisting step 256 may be performed to connect the transparent LED package to an electronic device.
- the solder resisting step 256 is performed between the connecting step 154 and the chip-bonding step 156 in this embodiment.
- the sequence for performing the solder resisting step 256 in the manufacturing method 250 is not limited thereto.
Abstract
Description
- This application claims priority to U.S. patent application Ser. No. 12/398,174, filed on Mar. 4, 2009, which claims priority to Taiwan Patent Application Number 097107548, filed on Mar. 4, 2008. These patent applications are herein incorporated in their entirety by reference.
- 1. Technical Field
- The present disclosure relates to a light emitting diode (LED) package structure and a manufacturing method therefor, and more particularly, to a transparent LED package structure and a manufacturing method therefor.
- 2. Description of Related Art
- With the advance of science and technologies, various types of advertising signboards are developed, and LED advertising signboards are one type of the most popular advertising signboards. In general, advertising signboards are mounted on elevated and noticeable areas or people-crowded areas, and thus the advertising signboards are often mounted on the glass curtain walls of high-rise buildings. However, since an LED advertising signboard is generally composed of a plurality of LED units through which very little light is allowed to pass, the LED advertising signboard will block the ambient light passing through a glass curtain wall of a building when being mounted on the glass curtain wall. As a result, ambient light cannot easily enter the building from the outside.
- An objective of the present disclosure is to provide a transparent LED package structure and a manufacturing method therefor, thereby overcoming the aforementioned problems.
- In one aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
- In one embodiment, the first light transmission insulation material may comprise transparent epoxy or silicone.
- In another embodiment, the second light transmission insulation material may comprise transparent epoxy or silicone.
- In yet another embodiment, the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
- In one embodiment, the manufacturing method may further perform a solder resisting step that coats a solder mask on a bottom side of the lead frame.
- In another embodiment, the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
- In another aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a solder resisting step that coats a solder mask on a bottom side of the lead frame; and perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue.
- In one embodiment, the first light transmission insulation material may transparent epoxy or silicone.
- In another embodiment, the manufacturing method may further encapsulate the at least one light-emitting diode chip with a second light transmission insulation material.
- In another embodiment, the second light transmission insulation material may comprise transparent epoxy or silicone.
- In still another embodiment, the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
- In one embodiment, the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
- In still another embodiment, the manufacturing method may perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
- In yet another aspect, a light emitting diode package may comprise: a light transmission substrate having a central portion and a peripheral portion surrounding the central portion; at least one light-emitting diode chip disposed on the central portion of the light transmission substrate; a lead frame connecting the peripheral portion of the light transmission substrate, wherein the lead frame is electrically connected to the light-emitting diode chip; and an encapsulant disposed on the light transparent substrate, wherein the encapsulant covers the at least one light-emitting diode chip and the lead frame.
- In one embodiment, the light transmission substrate may comprise transparent epoxy or silicone.
- In one embodiment, the encapsulant may comprise transparent epoxy or silicone.
- In another embodiment, the encapsulant and the light transmission substrate may be formed from the same material.
- In one embodiment, the light emitting diode package may further comprise a light transmission glue that bonds the at least one light-emitting diode chip on the light transmission substrate.
- In another embodiment, the light emitting diode package may further comprise a plurality of conducting wires or bumps electrically connecting the at least one light-emitting diode chip to the lead frame.
- In yet another embodiment, the light emitting diode package may further comprise a solder mask coated on a first side of the lead frame opposite from a second side of the lead frame that is on a same side of the light transmission substrate as the at least one light-emitting diode chip.
- The foregoing aspects and many of the attendant advantages of this present disclosure will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings.
-
FIGS. 1A-1F are cross sectional schematic diagrams showing a flow process for manufacturing a transparent LED package structure according to a first embodiment of the present disclosure. -
FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure. -
FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure. - In order to make the illustration of the present disclosure more explicit and complete, the following description is stated with reference to
FIG. 1A throughFIG. 3 . -
FIG. 1A toFIG. 1E are cross sectional schematic diagrams showing a manufacturing method of an LED package structure according to a first embodiment of the present disclosure.FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure. Referring toFIGS. 1A and 2 , in themanufacturing method 150, aheating step 152 is first performed to heat a first transparent plastic material to cause it to become asticky member 102, and thesticky member 102 is used as a substrate in the transparent LED package. In this embodiment, epoxy or silicone material is placed on a processing stage to form a board, and then the board is heated. It is noted that thesticky member 102 is transparent. A connectingstep 154 is then performed in which alead frame 108 is placed on thesticky member 102 so as to be connected with thesticky member 102, as shown inFIG. 1B andFIG. 2 . Thereafter, a chip-bonding step 156 is performed in which transparent chip-bonding glue 106 is used to bond atransparent LED 104 on thesticky member 102, as shown inFIG. 10 andFIG. 2 . A wire-bonding step 158 is then performed to electrically connect thelead frame 108 to thetransparent LED 104 via a plurality of conductingwires 110, as shown inFIG. 1D andFIG. 2 . Thereafter, anencapsulating step 160 is performed in which a second transparentplastic material 112 is used to encapsulate thetransparent LED 104 to increase the brightness of thetransparent LED 104, as shown inFIG. 1E andFIG. 2 . Adrying step 162 is then performed in which thesticky member 102 and the second transparentplastic material 112 are dried to form a transparent substrate and an encapsulant, as shown inFIG. 1E andFIG. 2 . - In the structure of the transparent LED package according to the first embodiment of the present disclosure, the area occupied by the
lead frame 108 is very small, so that the LED package can be a transparent structure. In addition, when the material of the second transparentplastic material 112 is the same as that of the first transparent plastic material, thedrying step 162 can be simplified, and the manufacturing method can be speeded up thereby. -
FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure. The manufacturing method 250 is similar to themanufacturing method 150, but the difference is that the manufacturing method 250 further comprises asolder resisting step 256. Referring toFIG. 1F ,FIG. 1F is a cross section diagram showing a transparent LED package structure in thesolder resisting step 256. In thesolder resisting step 256, asolder mask 210 is coated on the bottom side of thelead frame 108 to prevent defects from being produced in a soldering step. Thesolder resisting step 256 may be performed to connect the transparent LED package to an electronic device. In addition, thesolder resisting step 256 is performed between the connectingstep 154 and the chip-bonding step 156 in this embodiment. However, the sequence for performing thesolder resisting step 256 in the manufacturing method 250 is not limited thereto. - As is understood by a person skilled in the art, the foregoing embodiments of the present disclosure are strengths of the present disclosure rather than limiting of the present disclosure. It is intended to encapsulate various modifications and similar arrangements included within the spirit and scope of the appended claims, the scope of which should be accorded the broadest interpretation so as to encompass all such modifications and similar structures.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/183,439 US20110266589A1 (en) | 2008-03-04 | 2011-07-15 | Light Emitting Diode Package Structure and Manufacturing Method Therefor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097107548 | 2008-03-04 | ||
TW097107548A TWI422058B (en) | 2008-03-04 | 2008-03-04 | Package of light-emitting diode and manufacturing method thereof |
US12/398,174 US8008100B2 (en) | 2008-03-04 | 2009-03-04 | Light emitting diode package structure and manufacturing method therefor |
US13/183,439 US20110266589A1 (en) | 2008-03-04 | 2011-07-15 | Light Emitting Diode Package Structure and Manufacturing Method Therefor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/398,174 Continuation US8008100B2 (en) | 2008-03-04 | 2009-03-04 | Light emitting diode package structure and manufacturing method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110266589A1 true US20110266589A1 (en) | 2011-11-03 |
Family
ID=41052691
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/398,174 Expired - Fee Related US8008100B2 (en) | 2008-03-04 | 2009-03-04 | Light emitting diode package structure and manufacturing method therefor |
US13/183,439 Abandoned US20110266589A1 (en) | 2008-03-04 | 2011-07-15 | Light Emitting Diode Package Structure and Manufacturing Method Therefor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/398,174 Expired - Fee Related US8008100B2 (en) | 2008-03-04 | 2009-03-04 | Light emitting diode package structure and manufacturing method therefor |
Country Status (2)
Country | Link |
---|---|
US (2) | US8008100B2 (en) |
TW (1) | TWI422058B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987022B2 (en) | 2011-01-17 | 2015-03-24 | Samsung Electronics Co., Ltd. | Light-emitting device package and method of manufacturing the same |
CN102130239B (en) * | 2011-01-31 | 2012-11-07 | 郑榕彬 | Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part |
TWI451603B (en) * | 2011-03-07 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | Light emitting diode lead frame |
TW201417343A (en) * | 2012-10-22 | 2014-05-01 | Lextar Electronics Corp | Light emitting diode package structure and light emitting diode lamp having wide illumination angle |
CN103996785A (en) * | 2014-06-04 | 2014-08-20 | 宁波亚茂照明电器有限公司 | Built-in drive full-angle light-emitting LED light source and packaging process |
US20170084519A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Semiconductor package and method of manufacturing same |
DE102017122410A1 (en) | 2017-09-27 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Leadframe device and method of manufacturing a plurality of devices |
DE102017127621A1 (en) * | 2017-11-22 | 2019-05-23 | Osram Opto Semiconductors Gmbh | Leadframe device and method of manufacturing a plurality of devices |
Citations (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5866939A (en) * | 1996-01-21 | 1999-02-02 | Anam Semiconductor Inc. | Lead end grid array semiconductor package |
US5943558A (en) * | 1996-09-23 | 1999-08-24 | Communications Technology, Inc. | Method of making an assembly package having an air tight cavity and a product made by the method |
US5998862A (en) * | 1993-03-26 | 1999-12-07 | Sony Corporation | Air-packed CCD images package and a mold for manufacturing thereof |
US6054338A (en) * | 1996-05-17 | 2000-04-25 | National Semiconductor Corporation | Low cost ball grid array device and method of manufacture thereof |
US6184573B1 (en) * | 1999-05-13 | 2001-02-06 | Siliconware Precision Industries Co., Ltd. | Chip packaging |
US6262479B1 (en) * | 1999-10-05 | 2001-07-17 | Pan Pacific Semiconductor Co., Ltd. | Semiconductor packaging structure |
US20010014491A1 (en) * | 1994-11-22 | 2001-08-16 | Kenji Ohsawa | Lead frame and manufacturing method thereof |
US6384472B1 (en) * | 2000-03-24 | 2002-05-07 | Siliconware Precision Industries Co., Ltd | Leadless image sensor package structure and method for making the same |
US20020058395A1 (en) * | 1998-03-25 | 2002-05-16 | Salman Akram | High density flip chip memory arrays |
US6396082B1 (en) * | 1999-07-29 | 2002-05-28 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
US20030209465A1 (en) * | 2001-05-08 | 2003-11-13 | Nec Compound Semiconductor Devices, Ltd | Resin-molded package with cavity structure |
US6759266B1 (en) * | 2001-09-04 | 2004-07-06 | Amkor Technology, Inc. | Quick sealing glass-lidded package fabrication method |
US20040188700A1 (en) * | 1999-06-23 | 2004-09-30 | Citizen Electronics Co., Ltd. | Light emitting diode |
US20050212008A1 (en) * | 2002-11-29 | 2005-09-29 | Shin-Etsu Chemical Co., Ltd. | LED devices and silicone resin composition therefor |
US20050287711A1 (en) * | 2004-06-29 | 2005-12-29 | Advanced Semiconductor Engineering, Inc. | Leadframe of a leadless flip-chip package and method for manufacturing the same |
US7102214B1 (en) * | 2002-12-26 | 2006-09-05 | Amkor Technology, Inc. | Pre-molded leadframe |
US20060281225A1 (en) * | 2005-06-09 | 2006-12-14 | Ming Sun | Wafer level bumpless method of making a flip chip mounted semiconductor device package |
US20070284710A1 (en) * | 2002-06-14 | 2007-12-13 | Chi-Chuan Wu | Method for fabricating flip-chip semiconductor package with lead frame as chip carrier |
US20080023711A1 (en) * | 2006-07-31 | 2008-01-31 | Eric Tarsa | Light emitting diode package with optical element |
US20080067642A1 (en) * | 2002-08-08 | 2008-03-20 | Micron Technology, Inc. | Packaged microelectronic components |
US20080151543A1 (en) * | 2006-04-21 | 2008-06-26 | Xiaoping Wang | Ultra thin power led light with heat sink |
US20080166836A1 (en) * | 2003-06-03 | 2008-07-10 | Casio Computer Co., Ltd. | Semiconductor package including connected upper and lower interconnections, and manufacturing method thereof |
US20080259453A1 (en) * | 2007-04-19 | 2008-10-23 | Kanaya Mototakta | Retardation compensation element and manufacturing method of the same |
US20090026484A1 (en) * | 2007-07-25 | 2009-01-29 | Everlight Electronics Co., Ltd. | Light emitting diode device |
US20090108267A1 (en) * | 2007-10-29 | 2009-04-30 | Pai-Ling Sung | Composite light-emitting-diode packaging structure |
US7622751B2 (en) * | 2007-03-02 | 2009-11-24 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US20100073917A1 (en) * | 2006-05-31 | 2010-03-25 | Loh Ban P | Packaged light emitting devices including multiple index lenses and methods of fabricating the same |
US7696590B2 (en) * | 1998-06-30 | 2010-04-13 | Osram Gmbh | Diode housing |
US20100120206A1 (en) * | 2006-12-12 | 2010-05-13 | Agere Systems, Inc. | Integrated circuit package and a method for dissipating heat in an integrated circuit package |
US7825502B2 (en) * | 2008-01-09 | 2010-11-02 | Fairchild Semiconductor Corporation | Semiconductor die packages having overlapping dice, system using the same, and methods of making the same |
US20110018014A1 (en) * | 2002-08-30 | 2011-01-27 | Lumination Llc | Light emitting diode component |
US20110266583A1 (en) * | 2004-12-17 | 2011-11-03 | Park Jun Seok | Package for light emitting device |
US20110272717A1 (en) * | 2002-07-05 | 2011-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device And Method of Manufacturing The Same |
US20140084440A1 (en) * | 2000-12-28 | 2014-03-27 | Hitachi Hokkai Semiconductor Ltd. | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3785820B2 (en) * | 1998-08-03 | 2006-06-14 | 豊田合成株式会社 | Light emitting device |
US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
TWI284421B (en) * | 2005-06-21 | 2007-07-21 | Uni Light Technology Inc | LED structure for flip-chip package and method thereof |
CN2831445Y (en) | 2005-08-05 | 2006-10-25 | 宋文恭 | Onidirection LED structure |
-
2008
- 2008-03-04 TW TW097107548A patent/TWI422058B/en not_active IP Right Cessation
-
2009
- 2009-03-04 US US12/398,174 patent/US8008100B2/en not_active Expired - Fee Related
-
2011
- 2011-07-15 US US13/183,439 patent/US20110266589A1/en not_active Abandoned
Patent Citations (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998862A (en) * | 1993-03-26 | 1999-12-07 | Sony Corporation | Air-packed CCD images package and a mold for manufacturing thereof |
US20010014491A1 (en) * | 1994-11-22 | 2001-08-16 | Kenji Ohsawa | Lead frame and manufacturing method thereof |
US5866939A (en) * | 1996-01-21 | 1999-02-02 | Anam Semiconductor Inc. | Lead end grid array semiconductor package |
US6054338A (en) * | 1996-05-17 | 2000-04-25 | National Semiconductor Corporation | Low cost ball grid array device and method of manufacture thereof |
US5943558A (en) * | 1996-09-23 | 1999-08-24 | Communications Technology, Inc. | Method of making an assembly package having an air tight cavity and a product made by the method |
US20020058395A1 (en) * | 1998-03-25 | 2002-05-16 | Salman Akram | High density flip chip memory arrays |
US7696590B2 (en) * | 1998-06-30 | 2010-04-13 | Osram Gmbh | Diode housing |
US6184573B1 (en) * | 1999-05-13 | 2001-02-06 | Siliconware Precision Industries Co., Ltd. | Chip packaging |
US20040188700A1 (en) * | 1999-06-23 | 2004-09-30 | Citizen Electronics Co., Ltd. | Light emitting diode |
US6396082B1 (en) * | 1999-07-29 | 2002-05-28 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US6262479B1 (en) * | 1999-10-05 | 2001-07-17 | Pan Pacific Semiconductor Co., Ltd. | Semiconductor packaging structure |
US6384472B1 (en) * | 2000-03-24 | 2002-05-07 | Siliconware Precision Industries Co., Ltd | Leadless image sensor package structure and method for making the same |
US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
US20140084440A1 (en) * | 2000-12-28 | 2014-03-27 | Hitachi Hokkai Semiconductor Ltd. | Semiconductor device |
US20030209465A1 (en) * | 2001-05-08 | 2003-11-13 | Nec Compound Semiconductor Devices, Ltd | Resin-molded package with cavity structure |
US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
US6759266B1 (en) * | 2001-09-04 | 2004-07-06 | Amkor Technology, Inc. | Quick sealing glass-lidded package fabrication method |
US20070284710A1 (en) * | 2002-06-14 | 2007-12-13 | Chi-Chuan Wu | Method for fabricating flip-chip semiconductor package with lead frame as chip carrier |
US20110272717A1 (en) * | 2002-07-05 | 2011-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device And Method of Manufacturing The Same |
US20080067642A1 (en) * | 2002-08-08 | 2008-03-20 | Micron Technology, Inc. | Packaged microelectronic components |
US20110018014A1 (en) * | 2002-08-30 | 2011-01-27 | Lumination Llc | Light emitting diode component |
US20050212008A1 (en) * | 2002-11-29 | 2005-09-29 | Shin-Etsu Chemical Co., Ltd. | LED devices and silicone resin composition therefor |
US7102214B1 (en) * | 2002-12-26 | 2006-09-05 | Amkor Technology, Inc. | Pre-molded leadframe |
US20080166836A1 (en) * | 2003-06-03 | 2008-07-10 | Casio Computer Co., Ltd. | Semiconductor package including connected upper and lower interconnections, and manufacturing method thereof |
US20050287711A1 (en) * | 2004-06-29 | 2005-12-29 | Advanced Semiconductor Engineering, Inc. | Leadframe of a leadless flip-chip package and method for manufacturing the same |
US20110266583A1 (en) * | 2004-12-17 | 2011-11-03 | Park Jun Seok | Package for light emitting device |
US20060281225A1 (en) * | 2005-06-09 | 2006-12-14 | Ming Sun | Wafer level bumpless method of making a flip chip mounted semiconductor device package |
US20080151543A1 (en) * | 2006-04-21 | 2008-06-26 | Xiaoping Wang | Ultra thin power led light with heat sink |
US20100073917A1 (en) * | 2006-05-31 | 2010-03-25 | Loh Ban P | Packaged light emitting devices including multiple index lenses and methods of fabricating the same |
US20080023711A1 (en) * | 2006-07-31 | 2008-01-31 | Eric Tarsa | Light emitting diode package with optical element |
US20100120206A1 (en) * | 2006-12-12 | 2010-05-13 | Agere Systems, Inc. | Integrated circuit package and a method for dissipating heat in an integrated circuit package |
US7622751B2 (en) * | 2007-03-02 | 2009-11-24 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US20080259453A1 (en) * | 2007-04-19 | 2008-10-23 | Kanaya Mototakta | Retardation compensation element and manufacturing method of the same |
US20090026484A1 (en) * | 2007-07-25 | 2009-01-29 | Everlight Electronics Co., Ltd. | Light emitting diode device |
US20090108267A1 (en) * | 2007-10-29 | 2009-04-30 | Pai-Ling Sung | Composite light-emitting-diode packaging structure |
US7825502B2 (en) * | 2008-01-09 | 2010-11-02 | Fairchild Semiconductor Corporation | Semiconductor die packages having overlapping dice, system using the same, and methods of making the same |
Also Published As
Publication number | Publication date |
---|---|
TWI422058B (en) | 2014-01-01 |
TW200939515A (en) | 2009-09-16 |
US8008100B2 (en) | 2011-08-30 |
US20090224280A1 (en) | 2009-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20110266589A1 (en) | Light Emitting Diode Package Structure and Manufacturing Method Therefor | |
JP5596901B2 (en) | Power light emitting die package having a reflective lens and method of manufacturing the same | |
JP5260049B2 (en) | Power light emitting die package with reflective lens | |
CN102610599B (en) | Light emitting device packaging piece and manufacture method thereof | |
TW201312805A (en) | Optical component, package, and method for forming the same | |
JP4914998B1 (en) | LED module device and manufacturing method thereof | |
JP2012074753A (en) | Light emitting diode package | |
US20050280016A1 (en) | PCB-based surface mount LED device with silicone-based encapsulation structure | |
JP2005223216A (en) | Light emitting light source, illuminator, and display unit | |
US20070194691A1 (en) | Light emitting diode package structure having high light extraction efficiency and method of manufacturing the same | |
TWI472067B (en) | Optical package and method of manufacturing the same | |
JP7410752B2 (en) | Package structure and its electronics | |
KR101051690B1 (en) | Optical package and manufacturing method of the same | |
CN101533784B (en) | Light emitting diode encapsulating structure and production method thereof | |
KR100954858B1 (en) | A high-luminance led package and method for manufacturing thereof | |
KR101129002B1 (en) | Optical package and manufacturing method of the same | |
TWI720418B (en) | Semiconductor light emitting unit and package method thereof | |
KR101250381B1 (en) | Optical package and manufacturing method of the same | |
KR101053048B1 (en) | Light emitting diode module | |
KR101136392B1 (en) | Optical package and manufacturing method of the same | |
KR101158497B1 (en) | Tape type light package and manufacturing method of the same | |
TWI779188B (en) | Light-emitting element package structure and manufacturing method thereof | |
KR101146656B1 (en) | Optical package and manufacturing method of the same | |
CN209434222U (en) | A kind of open LED support | |
TWM322064U (en) | Surface mount light emitting diode package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: EVERLIGHT ELECTRONICS CO., LTD., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:EVERLIGHT ELECTRONICS CO., LTD.;REEL/FRAME:026594/0826 Effective date: 20110711 Owner name: EVERLIGHT YI-GUANG TECHNOLOGY (SHANGHAI) LTD., CHI Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:EVERLIGHT ELECTRONICS CO., LTD.;REEL/FRAME:026594/0826 Effective date: 20110711 |
|
AS | Assignment |
Owner name: EVERLIGHT ELECTRONICS CO., LTD., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:EVERLIGHT YI-GUANG TECHNOLOGY (SHANGHAI) LTD.;REEL/FRAME:027887/0427 Effective date: 20120315 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |