US20110266589A1 - Light Emitting Diode Package Structure and Manufacturing Method Therefor - Google Patents

Light Emitting Diode Package Structure and Manufacturing Method Therefor Download PDF

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US20110266589A1
US20110266589A1 US13/183,439 US201113183439A US2011266589A1 US 20110266589 A1 US20110266589 A1 US 20110266589A1 US 201113183439 A US201113183439 A US 201113183439A US 2011266589 A1 US2011266589 A1 US 2011266589A1
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Prior art keywords
light
emitting diode
light transmission
insulation material
manufacturing
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US13/183,439
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Chih-Chia Tsai
Cheng-Yi Chang
Ming-Kuei Lin
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Everlight Electronics Co Ltd
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EVERLIGHT YI GUANG Tech (SHANGHAI) Ltd
Everlight Electronics Co Ltd
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Priority to US13/183,439 priority Critical patent/US20110266589A1/en
Assigned to EVERLIGHT ELECTRONICS CO., LTD., Everlight Yi-Guang Technology (Shanghai) Ltd. reassignment EVERLIGHT ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EVERLIGHT ELECTRONICS CO., LTD.
Publication of US20110266589A1 publication Critical patent/US20110266589A1/en
Assigned to EVERLIGHT ELECTRONICS CO., LTD. reassignment EVERLIGHT ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: Everlight Yi-Guang Technology (Shanghai) Ltd.
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49506Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861Lead-frames fixed on or encapsulated in insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present disclosure relates to a light emitting diode (LED) package structure and a manufacturing method therefor, and more particularly, to a transparent LED package structure and a manufacturing method therefor.
  • LED light emitting diode
  • LED advertising signboards are one type of the most popular advertising signboards.
  • advertising signboards are mounted on elevated and noticeable areas or people-crowded areas, and thus the advertising signboards are often mounted on the glass curtain walls of high-rise buildings.
  • an LED advertising signboard is generally composed of a plurality of LED units through which very little light is allowed to pass, the LED advertising signboard will block the ambient light passing through a glass curtain wall of a building when being mounted on the glass curtain wall. As a result, ambient light cannot easily enter the building from the outside.
  • An objective of the present disclosure is to provide a transparent LED package structure and a manufacturing method therefor, thereby overcoming the aforementioned problems.
  • a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
  • the first light transmission insulation material may comprise transparent epoxy or silicone.
  • the second light transmission insulation material may comprise transparent epoxy or silicone.
  • the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
  • the manufacturing method may further perform a solder resisting step that coats a solder mask on a bottom side of the lead frame.
  • the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
  • a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a solder resisting step that coats a solder mask on a bottom side of the lead frame; and perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue.
  • the first light transmission insulation material may transparent epoxy or silicone.
  • the manufacturing method may further encapsulate the at least one light-emitting diode chip with a second light transmission insulation material.
  • the second light transmission insulation material may comprise transparent epoxy or silicone.
  • the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
  • the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
  • the manufacturing method may perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
  • a light emitting diode package may comprise: a light transmission substrate having a central portion and a peripheral portion surrounding the central portion; at least one light-emitting diode chip disposed on the central portion of the light transmission substrate; a lead frame connecting the peripheral portion of the light transmission substrate, wherein the lead frame is electrically connected to the light-emitting diode chip; and an encapsulant disposed on the light transparent substrate, wherein the encapsulant covers the at least one light-emitting diode chip and the lead frame.
  • the light transmission substrate may comprise transparent epoxy or silicone.
  • the encapsulant may comprise transparent epoxy or silicone.
  • the encapsulant and the light transmission substrate may be formed from the same material.
  • the light emitting diode package may further comprise a light transmission glue that bonds the at least one light-emitting diode chip on the light transmission substrate.
  • the light emitting diode package may further comprise a plurality of conducting wires or bumps electrically connecting the at least one light-emitting diode chip to the lead frame.
  • the light emitting diode package may further comprise a solder mask coated on a first side of the lead frame opposite from a second side of the lead frame that is on a same side of the light transmission substrate as the at least one light-emitting diode chip.
  • FIGS. 1A-1F are cross sectional schematic diagrams showing a flow process for manufacturing a transparent LED package structure according to a first embodiment of the present disclosure.
  • FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure.
  • FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure.
  • FIG. 1A to FIG. 1E are cross sectional schematic diagrams showing a manufacturing method of an LED package structure according to a first embodiment of the present disclosure.
  • FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure.
  • a heating step 152 is first performed to heat a first transparent plastic material to cause it to become a sticky member 102 , and the sticky member 102 is used as a substrate in the transparent LED package.
  • epoxy or silicone material is placed on a processing stage to form a board, and then the board is heated. It is noted that the sticky member 102 is transparent.
  • a connecting step 154 is then performed in which a lead frame 108 is placed on the sticky member 102 so as to be connected with the sticky member 102 , as shown in FIG. 1B and FIG. 2 .
  • a chip-bonding step 156 is performed in which transparent chip-bonding glue 106 is used to bond a transparent LED 104 on the sticky member 102 , as shown in FIG. 10 and FIG. 2 .
  • a wire-bonding step 158 is then performed to electrically connect the lead frame 108 to the transparent LED 104 via a plurality of conducting wires 110 , as shown in FIG. 1D and FIG. 2 .
  • an encapsulating step 160 is performed in which a second transparent plastic material 112 is used to encapsulate the transparent LED 104 to increase the brightness of the transparent LED 104 , as shown in FIG. 1E and FIG. 2 .
  • a drying step 162 is then performed in which the sticky member 102 and the second transparent plastic material 112 are dried to form a transparent substrate and an encapsulant, as shown in FIG. 1E and FIG. 2 .
  • the area occupied by the lead frame 108 is very small, so that the LED package can be a transparent structure.
  • the drying step 162 can be simplified, and the manufacturing method can be speeded up thereby.
  • FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure.
  • the manufacturing method 250 is similar to the manufacturing method 150 , but the difference is that the manufacturing method 250 further comprises a solder resisting step 256 .
  • FIG. 1F is a cross section diagram showing a transparent LED package structure in the solder resisting step 256 .
  • a solder mask 210 is coated on the bottom side of the lead frame 108 to prevent defects from being produced in a soldering step.
  • the solder resisting step 256 may be performed to connect the transparent LED package to an electronic device.
  • the solder resisting step 256 is performed between the connecting step 154 and the chip-bonding step 156 in this embodiment.
  • the sequence for performing the solder resisting step 256 in the manufacturing method 250 is not limited thereto.

Abstract

A light emitting diode (LED) package and a manufacturing method therefor are disclosed. In one aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.

Description

    CROSS-REFERENCE TO RELATED PATENT APPLICATIONS
  • This application claims priority to U.S. patent application Ser. No. 12/398,174, filed on Mar. 4, 2009, which claims priority to Taiwan Patent Application Number 097107548, filed on Mar. 4, 2008. These patent applications are herein incorporated in their entirety by reference.
  • BACKGROUND
  • 1. Technical Field
  • The present disclosure relates to a light emitting diode (LED) package structure and a manufacturing method therefor, and more particularly, to a transparent LED package structure and a manufacturing method therefor.
  • 2. Description of Related Art
  • With the advance of science and technologies, various types of advertising signboards are developed, and LED advertising signboards are one type of the most popular advertising signboards. In general, advertising signboards are mounted on elevated and noticeable areas or people-crowded areas, and thus the advertising signboards are often mounted on the glass curtain walls of high-rise buildings. However, since an LED advertising signboard is generally composed of a plurality of LED units through which very little light is allowed to pass, the LED advertising signboard will block the ambient light passing through a glass curtain wall of a building when being mounted on the glass curtain wall. As a result, ambient light cannot easily enter the building from the outside.
  • SUMMARY
  • An objective of the present disclosure is to provide a transparent LED package structure and a manufacturing method therefor, thereby overcoming the aforementioned problems.
  • In one aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue; encapsulate the at least one light-emitting diode chip with a second light transmission insulation material; and perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
  • In one embodiment, the first light transmission insulation material may comprise transparent epoxy or silicone.
  • In another embodiment, the second light transmission insulation material may comprise transparent epoxy or silicone.
  • In yet another embodiment, the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
  • In one embodiment, the manufacturing method may further perform a solder resisting step that coats a solder mask on a bottom side of the lead frame.
  • In another embodiment, the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
  • In another aspect, a manufacturing method of a light emitting diode package may: heat a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member; connect a lead frame to the sticky member; perform a solder resisting step that coats a solder mask on a bottom side of the lead frame; and perform a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue.
  • In one embodiment, the first light transmission insulation material may transparent epoxy or silicone.
  • In another embodiment, the manufacturing method may further encapsulate the at least one light-emitting diode chip with a second light transmission insulation material.
  • In another embodiment, the second light transmission insulation material may comprise transparent epoxy or silicone.
  • In still another embodiment, the second light transmission insulation material and the first light transmission insulation material may be formed from the same transparent material.
  • In one embodiment, the manufacturing method may further perform a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
  • In still another embodiment, the manufacturing method may perform a drying step that forms the sticky member and the second light transmission insulation material into shape.
  • In yet another aspect, a light emitting diode package may comprise: a light transmission substrate having a central portion and a peripheral portion surrounding the central portion; at least one light-emitting diode chip disposed on the central portion of the light transmission substrate; a lead frame connecting the peripheral portion of the light transmission substrate, wherein the lead frame is electrically connected to the light-emitting diode chip; and an encapsulant disposed on the light transparent substrate, wherein the encapsulant covers the at least one light-emitting diode chip and the lead frame.
  • In one embodiment, the light transmission substrate may comprise transparent epoxy or silicone.
  • In one embodiment, the encapsulant may comprise transparent epoxy or silicone.
  • In another embodiment, the encapsulant and the light transmission substrate may be formed from the same material.
  • In one embodiment, the light emitting diode package may further comprise a light transmission glue that bonds the at least one light-emitting diode chip on the light transmission substrate.
  • In another embodiment, the light emitting diode package may further comprise a plurality of conducting wires or bumps electrically connecting the at least one light-emitting diode chip to the lead frame.
  • In yet another embodiment, the light emitting diode package may further comprise a solder mask coated on a first side of the lead frame opposite from a second side of the lead frame that is on a same side of the light transmission substrate as the at least one light-emitting diode chip.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing aspects and many of the attendant advantages of this present disclosure will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings.
  • FIGS. 1A-1F are cross sectional schematic diagrams showing a flow process for manufacturing a transparent LED package structure according to a first embodiment of the present disclosure.
  • FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure.
  • FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • In order to make the illustration of the present disclosure more explicit and complete, the following description is stated with reference to FIG. 1A through FIG. 3.
  • First Embodiment
  • FIG. 1A to FIG. 1E are cross sectional schematic diagrams showing a manufacturing method of an LED package structure according to a first embodiment of the present disclosure. FIG. 2 is a schematic flowchart showing the manufacturing method according to the first embodiment of the present disclosure. Referring to FIGS. 1A and 2, in the manufacturing method 150, a heating step 152 is first performed to heat a first transparent plastic material to cause it to become a sticky member 102, and the sticky member 102 is used as a substrate in the transparent LED package. In this embodiment, epoxy or silicone material is placed on a processing stage to form a board, and then the board is heated. It is noted that the sticky member 102 is transparent. A connecting step 154 is then performed in which a lead frame 108 is placed on the sticky member 102 so as to be connected with the sticky member 102, as shown in FIG. 1B and FIG. 2. Thereafter, a chip-bonding step 156 is performed in which transparent chip-bonding glue 106 is used to bond a transparent LED 104 on the sticky member 102, as shown in FIG. 10 and FIG. 2. A wire-bonding step 158 is then performed to electrically connect the lead frame 108 to the transparent LED 104 via a plurality of conducting wires 110, as shown in FIG. 1D and FIG. 2. Thereafter, an encapsulating step 160 is performed in which a second transparent plastic material 112 is used to encapsulate the transparent LED 104 to increase the brightness of the transparent LED 104, as shown in FIG. 1E and FIG. 2. A drying step 162 is then performed in which the sticky member 102 and the second transparent plastic material 112 are dried to form a transparent substrate and an encapsulant, as shown in FIG. 1E and FIG. 2.
  • In the structure of the transparent LED package according to the first embodiment of the present disclosure, the area occupied by the lead frame 108 is very small, so that the LED package can be a transparent structure. In addition, when the material of the second transparent plastic material 112 is the same as that of the first transparent plastic material, the drying step 162 can be simplified, and the manufacturing method can be speeded up thereby.
  • Second Embodiment
  • FIG. 3 is a schematic flow chart showing a manufacturing method according to a second embodiment of the present disclosure. The manufacturing method 250 is similar to the manufacturing method 150, but the difference is that the manufacturing method 250 further comprises a solder resisting step 256. Referring to FIG. 1F, FIG. 1F is a cross section diagram showing a transparent LED package structure in the solder resisting step 256. In the solder resisting step 256, a solder mask 210 is coated on the bottom side of the lead frame 108 to prevent defects from being produced in a soldering step. The solder resisting step 256 may be performed to connect the transparent LED package to an electronic device. In addition, the solder resisting step 256 is performed between the connecting step 154 and the chip-bonding step 156 in this embodiment. However, the sequence for performing the solder resisting step 256 in the manufacturing method 250 is not limited thereto.
  • As is understood by a person skilled in the art, the foregoing embodiments of the present disclosure are strengths of the present disclosure rather than limiting of the present disclosure. It is intended to encapsulate various modifications and similar arrangements included within the spirit and scope of the appended claims, the scope of which should be accorded the broadest interpretation so as to encompass all such modifications and similar structures.

Claims (20)

1. A manufacturing method of a light emitting diode package, comprising:
heating a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member;
connecting a lead frame to the sticky member;
performing a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue;
encapsulating the at least one light-emitting diode chip with a second light transmission insulation material; and
performing a drying step that forms the sticky member and the second light transmission insulation material into shape.
2. The manufacturing method as recited in claim 1, wherein the first light transmission insulation material comprises transparent epoxy or silicone.
3. The manufacturing method as recited in claim 1, wherein the second light transmission insulation material comprises transparent epoxy or silicone.
4. The manufacturing method as recited in claim 1, wherein the second light transmission insulation material and the first light transmission insulation material are formed from the same transparent material.
5. The manufacturing method as recited in claim 1, further comprising:
performing a solder resisting step that coats a solder mask on a bottom side of the lead frame.
6. The manufacturing method as recited in claim 1, further comprising:
performing a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
7. A manufacturing method of a light emitting diode package, comprising:
heating a first light transmission insulation material to cause the first light transmission insulation material to become a sticky member;
connecting a lead frame to the sticky member;
performing a solder resisting step that coats a solder mask on a bottom side of the lead frame; and
performing a chip-bonding step that bonds at least one light-emitting diode chip on the sticky member using a light transmission glue.
8. The manufacturing method as recited in claim 7, wherein the first light transmission insulation material comprises transparent epoxy or silicone.
9. The manufacturing method as recited in claim 7, further comprising:
encapsulating the at least one light-emitting diode chip with a second light transmission insulation material.
10. The manufacturing method as recited in claim 9, wherein the second light transmission insulation material comprises transparent epoxy or silicone.
11. The manufacturing method as recited in claim 9, wherein the second light transmission insulation material and the first light transmission insulation material are formed from the same transparent material.
12. The manufacturing method as recited in claim 9, further comprising:
performing a drying step that forms the sticky member and the second light transmission insulation material into shape.
13. The manufacturing method as recited in claim 7, further comprising:
performing a wire-bonding step or a bump-bonding step that electrically connects the at least one light-emitting diode chip to the lead frame.
14. A light emitting diode package, comprising:
a light transmission substrate having a central portion and a peripheral portion surrounding the central portion;
at least one light-emitting diode chip disposed on the central portion of the light transmission substrate;
a lead frame connecting the peripheral portion of the light transmission substrate, wherein the lead frame is electrically connected to the light-emitting diode chip; and
an encapsulant disposed on the light transparent substrate, wherein the encapsulant covers the at least one light-emitting diode chip and the lead frame.
15. The light emitting diode package as recited in claim 14, wherein the light transmission substrate comprises transparent epoxy or silicone.
16. The light emitting diode package as recited in claim 14, wherein the encapsulant comprises transparent epoxy or silicone.
17. The light emitting diode package as recited in claim 14, wherein the encapsulant and the light transmission substrate are formed from the same material.
18. The light emitting diode package as recited in claim 14, further comprising:
a light transmission glue that bonds the at least one light-emitting diode chip on the light transmission substrate.
19. The light emitting diode package as recited in claim 14, further comprising:
a plurality of conducting wires or bumps electrically connecting the at least one light-emitting diode chip to the lead frame.
20. The light emitting diode package as recited in claim 14, further comprising:
a solder mask coated on a first side of the lead frame opposite from a second side of the lead frame that is on a same side of the light transmission substrate as the at least one light-emitting diode chip.
US13/183,439 2008-03-04 2011-07-15 Light Emitting Diode Package Structure and Manufacturing Method Therefor Abandoned US20110266589A1 (en)

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8987022B2 (en) 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same
CN102130239B (en) * 2011-01-31 2012-11-07 郑榕彬 Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part
TWI451603B (en) * 2011-03-07 2014-09-01 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
TW201417343A (en) * 2012-10-22 2014-05-01 Lextar Electronics Corp Light emitting diode package structure and light emitting diode lamp having wide illumination angle
CN103996785A (en) * 2014-06-04 2014-08-20 宁波亚茂照明电器有限公司 Built-in drive full-angle light-emitting LED light source and packaging process
US20170084519A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor package and method of manufacturing same
DE102017122410A1 (en) 2017-09-27 2019-03-28 Osram Opto Semiconductors Gmbh Leadframe device and method of manufacturing a plurality of devices
DE102017127621A1 (en) * 2017-11-22 2019-05-23 Osram Opto Semiconductors Gmbh Leadframe device and method of manufacturing a plurality of devices

Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866939A (en) * 1996-01-21 1999-02-02 Anam Semiconductor Inc. Lead end grid array semiconductor package
US5943558A (en) * 1996-09-23 1999-08-24 Communications Technology, Inc. Method of making an assembly package having an air tight cavity and a product made by the method
US5998862A (en) * 1993-03-26 1999-12-07 Sony Corporation Air-packed CCD images package and a mold for manufacturing thereof
US6054338A (en) * 1996-05-17 2000-04-25 National Semiconductor Corporation Low cost ball grid array device and method of manufacture thereof
US6184573B1 (en) * 1999-05-13 2001-02-06 Siliconware Precision Industries Co., Ltd. Chip packaging
US6262479B1 (en) * 1999-10-05 2001-07-17 Pan Pacific Semiconductor Co., Ltd. Semiconductor packaging structure
US20010014491A1 (en) * 1994-11-22 2001-08-16 Kenji Ohsawa Lead frame and manufacturing method thereof
US6384472B1 (en) * 2000-03-24 2002-05-07 Siliconware Precision Industries Co., Ltd Leadless image sensor package structure and method for making the same
US20020058395A1 (en) * 1998-03-25 2002-05-16 Salman Akram High density flip chip memory arrays
US6396082B1 (en) * 1999-07-29 2002-05-28 Citizen Electronics Co., Ltd. Light-emitting diode
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US6492699B1 (en) * 2000-05-22 2002-12-10 Amkor Technology, Inc. Image sensor package having sealed cavity over active area
US20030209465A1 (en) * 2001-05-08 2003-11-13 Nec Compound Semiconductor Devices, Ltd Resin-molded package with cavity structure
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
US20040188700A1 (en) * 1999-06-23 2004-09-30 Citizen Electronics Co., Ltd. Light emitting diode
US20050212008A1 (en) * 2002-11-29 2005-09-29 Shin-Etsu Chemical Co., Ltd. LED devices and silicone resin composition therefor
US20050287711A1 (en) * 2004-06-29 2005-12-29 Advanced Semiconductor Engineering, Inc. Leadframe of a leadless flip-chip package and method for manufacturing the same
US7102214B1 (en) * 2002-12-26 2006-09-05 Amkor Technology, Inc. Pre-molded leadframe
US20060281225A1 (en) * 2005-06-09 2006-12-14 Ming Sun Wafer level bumpless method of making a flip chip mounted semiconductor device package
US20070284710A1 (en) * 2002-06-14 2007-12-13 Chi-Chuan Wu Method for fabricating flip-chip semiconductor package with lead frame as chip carrier
US20080023711A1 (en) * 2006-07-31 2008-01-31 Eric Tarsa Light emitting diode package with optical element
US20080067642A1 (en) * 2002-08-08 2008-03-20 Micron Technology, Inc. Packaged microelectronic components
US20080151543A1 (en) * 2006-04-21 2008-06-26 Xiaoping Wang Ultra thin power led light with heat sink
US20080166836A1 (en) * 2003-06-03 2008-07-10 Casio Computer Co., Ltd. Semiconductor package including connected upper and lower interconnections, and manufacturing method thereof
US20080259453A1 (en) * 2007-04-19 2008-10-23 Kanaya Mototakta Retardation compensation element and manufacturing method of the same
US20090026484A1 (en) * 2007-07-25 2009-01-29 Everlight Electronics Co., Ltd. Light emitting diode device
US20090108267A1 (en) * 2007-10-29 2009-04-30 Pai-Ling Sung Composite light-emitting-diode packaging structure
US7622751B2 (en) * 2007-03-02 2009-11-24 Citizen Electronics Co., Ltd. Light-emitting diode
US20100073917A1 (en) * 2006-05-31 2010-03-25 Loh Ban P Packaged light emitting devices including multiple index lenses and methods of fabricating the same
US7696590B2 (en) * 1998-06-30 2010-04-13 Osram Gmbh Diode housing
US20100120206A1 (en) * 2006-12-12 2010-05-13 Agere Systems, Inc. Integrated circuit package and a method for dissipating heat in an integrated circuit package
US7825502B2 (en) * 2008-01-09 2010-11-02 Fairchild Semiconductor Corporation Semiconductor die packages having overlapping dice, system using the same, and methods of making the same
US20110018014A1 (en) * 2002-08-30 2011-01-27 Lumination Llc Light emitting diode component
US20110266583A1 (en) * 2004-12-17 2011-11-03 Park Jun Seok Package for light emitting device
US20110272717A1 (en) * 2002-07-05 2011-11-10 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device And Method of Manufacturing The Same
US20140084440A1 (en) * 2000-12-28 2014-03-27 Hitachi Hokkai Semiconductor Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3785820B2 (en) * 1998-08-03 2006-06-14 豊田合成株式会社 Light emitting device
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
TWI284421B (en) * 2005-06-21 2007-07-21 Uni Light Technology Inc LED structure for flip-chip package and method thereof
CN2831445Y (en) 2005-08-05 2006-10-25 宋文恭 Onidirection LED structure

Patent Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998862A (en) * 1993-03-26 1999-12-07 Sony Corporation Air-packed CCD images package and a mold for manufacturing thereof
US20010014491A1 (en) * 1994-11-22 2001-08-16 Kenji Ohsawa Lead frame and manufacturing method thereof
US5866939A (en) * 1996-01-21 1999-02-02 Anam Semiconductor Inc. Lead end grid array semiconductor package
US6054338A (en) * 1996-05-17 2000-04-25 National Semiconductor Corporation Low cost ball grid array device and method of manufacture thereof
US5943558A (en) * 1996-09-23 1999-08-24 Communications Technology, Inc. Method of making an assembly package having an air tight cavity and a product made by the method
US20020058395A1 (en) * 1998-03-25 2002-05-16 Salman Akram High density flip chip memory arrays
US7696590B2 (en) * 1998-06-30 2010-04-13 Osram Gmbh Diode housing
US6184573B1 (en) * 1999-05-13 2001-02-06 Siliconware Precision Industries Co., Ltd. Chip packaging
US20040188700A1 (en) * 1999-06-23 2004-09-30 Citizen Electronics Co., Ltd. Light emitting diode
US6396082B1 (en) * 1999-07-29 2002-05-28 Citizen Electronics Co., Ltd. Light-emitting diode
US6262479B1 (en) * 1999-10-05 2001-07-17 Pan Pacific Semiconductor Co., Ltd. Semiconductor packaging structure
US6384472B1 (en) * 2000-03-24 2002-05-07 Siliconware Precision Industries Co., Ltd Leadless image sensor package structure and method for making the same
US6492699B1 (en) * 2000-05-22 2002-12-10 Amkor Technology, Inc. Image sensor package having sealed cavity over active area
US20140084440A1 (en) * 2000-12-28 2014-03-27 Hitachi Hokkai Semiconductor Ltd. Semiconductor device
US20030209465A1 (en) * 2001-05-08 2003-11-13 Nec Compound Semiconductor Devices, Ltd Resin-molded package with cavity structure
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
US20070284710A1 (en) * 2002-06-14 2007-12-13 Chi-Chuan Wu Method for fabricating flip-chip semiconductor package with lead frame as chip carrier
US20110272717A1 (en) * 2002-07-05 2011-11-10 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Device And Method of Manufacturing The Same
US20080067642A1 (en) * 2002-08-08 2008-03-20 Micron Technology, Inc. Packaged microelectronic components
US20110018014A1 (en) * 2002-08-30 2011-01-27 Lumination Llc Light emitting diode component
US20050212008A1 (en) * 2002-11-29 2005-09-29 Shin-Etsu Chemical Co., Ltd. LED devices and silicone resin composition therefor
US7102214B1 (en) * 2002-12-26 2006-09-05 Amkor Technology, Inc. Pre-molded leadframe
US20080166836A1 (en) * 2003-06-03 2008-07-10 Casio Computer Co., Ltd. Semiconductor package including connected upper and lower interconnections, and manufacturing method thereof
US20050287711A1 (en) * 2004-06-29 2005-12-29 Advanced Semiconductor Engineering, Inc. Leadframe of a leadless flip-chip package and method for manufacturing the same
US20110266583A1 (en) * 2004-12-17 2011-11-03 Park Jun Seok Package for light emitting device
US20060281225A1 (en) * 2005-06-09 2006-12-14 Ming Sun Wafer level bumpless method of making a flip chip mounted semiconductor device package
US20080151543A1 (en) * 2006-04-21 2008-06-26 Xiaoping Wang Ultra thin power led light with heat sink
US20100073917A1 (en) * 2006-05-31 2010-03-25 Loh Ban P Packaged light emitting devices including multiple index lenses and methods of fabricating the same
US20080023711A1 (en) * 2006-07-31 2008-01-31 Eric Tarsa Light emitting diode package with optical element
US20100120206A1 (en) * 2006-12-12 2010-05-13 Agere Systems, Inc. Integrated circuit package and a method for dissipating heat in an integrated circuit package
US7622751B2 (en) * 2007-03-02 2009-11-24 Citizen Electronics Co., Ltd. Light-emitting diode
US20080259453A1 (en) * 2007-04-19 2008-10-23 Kanaya Mototakta Retardation compensation element and manufacturing method of the same
US20090026484A1 (en) * 2007-07-25 2009-01-29 Everlight Electronics Co., Ltd. Light emitting diode device
US20090108267A1 (en) * 2007-10-29 2009-04-30 Pai-Ling Sung Composite light-emitting-diode packaging structure
US7825502B2 (en) * 2008-01-09 2010-11-02 Fairchild Semiconductor Corporation Semiconductor die packages having overlapping dice, system using the same, and methods of making the same

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