US20110184156A1 - Precursors for deposition of metal oxide layers or films - Google Patents
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- US20110184156A1 US20110184156A1 US13/036,602 US201113036602A US2011184156A1 US 20110184156 A1 US20110184156 A1 US 20110184156A1 US 201113036602 A US201113036602 A US 201113036602A US 2011184156 A1 US2011184156 A1 US 2011184156A1
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- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic System
- C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic System compounds without a metal-carbon linkage
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
- C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic System without C-Metal linkages
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
Definitions
- This invention concerns precursors for deposition of metal oxide layers or films, methods of making such precursors and methods of depositing metal oxide layers or films using such precursors.
- This invention is particularly, but not exclusively, concerned with precursors for the growth of praseodymium oxide and other lanthanide (rare earth) metal oxides by chemical vapour deposition.
- Another attractive feature of some rare earth oxides eg. Pr 2 O 3 , Gd 2 O 3
- MOCVD Metalorganic chemical vapour deposition
- An essential requirement for a successful MOCVD process is the availability of precursors with the appropriate physical properties for vapour phase transport and a suitable reactivity for deposition. There must be an adequate temperature window between evaporation and decomposition, and for most electronics applications oxide deposition is restricted to temperatures in the region of 500° C., to prevent degradation of the underlying silicon circuitry and metal interconnects.
- Pr 2 O 3 thin films have previously been deposited by physical vapour deposition techniques such as MBE and pulsed laser deposition.
- Metalorganic chemical vapour deposition (MOCVD) has a number of potential advantages over these techniques, such as large area growth capability, good composition control, high film densities and excellent conformal step coverage, but there have been very few reports on the MOCVD of Praseodymium oxide, due largely to a lack of suitable precursors.
- PrO 2 , Pr 6 O 11 , Pr 2 O 3 Pr(thd) 3
- thd 2,2,6,6,-tetramethylheptane-3,5-dionate
- the deposition temperature used (750° C.) is incompatible with the low deposition temperature generally required for microelectronics applications, where high growth temperatures can lead to problems such as increased dopant diffusion.
- Metal alkoxides have been widely used in the MOCVD of metal oxides, and generally allow lower growth temperatures than the more thermally stable metal ⁇ -diketonate precursors.
- An object of this invention is to provide stable volatile rare earth metal oxide precursors suitable for use in chemical vapour deposition techniques.
- the donor functionalised alkoxy ligand 1-methoxy-2-methyl-2-propanolate [OCMe 2 CH 2 OMe, mmp] is effective in inhibiting oligomerisation in praseodymium alkoxide complexes, as well as increasing the ambient stability of the complexes.
- the present invention provides rare earth metal precursors for use in MOCVD techniques having a ligand of the general formula OCR 1 (R 2 )CH 2 X, wherein R 1 is H or an alkyl group, R 2 is an optionally substituted alkyl group and X is selected from OR and NR 2 , wherein R is an alkyl group or a substituted alkyl group.
- Preferred precursors according to the invention have the following general formula:
- M is a rare earth metal, especially praseodymium
- R 1 is H or an alkyl group
- R 2 is an optionally substituted alkyl group
- OCH(Me)CH 2 OMe OCEt 2 CH 2 OMe, OCH(Et)CH 2 OMe, OC(Pr i ) 2 CH 2 OMe, OCH(Pr i )CH 2 OMe, OC(Bu t ) 2 CH 2 OMe, OCH(Bu t )CH 2 OMe, OCH(Bu t )CH 2 OMe, OCH(Bu t )CH 2 OEt, OC(Bu t ) 2 CH 2 OEt, OC(Pr i ) 2 CH 2 OEt, OCH(Bu t )CH 2 NEt 2 , OC(Pr i ) 2 CH 2 OC 2 H 4 OMe and OC(Bu t )(CH 2 OPr i ) 2 .
- an alternative method of general synthesis of lanthanide and rare earth element complexes of the formula M[OCR 1 (R 2 )CH 2 X] 3 as defined above, such as, Ln(mmp) 3 involves the salt exchange reaction of Ln(NO 3 ) 3 (tetraglyme) with appropriate molar equivalents of Na(M[OCR 1 (R 2 )CH 2 X] 3 , such as Na(mmp), in tetrahydrofuran solvent.
- a similar method may be used for the preparation of Sc(mmp) 3 and Y(mmp) 3 .
- Precursors according to the invention may be used in depositing single or mixed oxide layers or films by conventional MOCVD, in which the precursor is contained in a metalorganic bubbler, or by liquid injection MOCVD, in which the precursor is dissolved in an appropriate inert organic solvent and then evaporated into the vapour phase using a heated evaporator.
- suitable solvents include aliphatic hydrocarbons, such as hexane, heptane and nonane, aromatic hydrocarbons such as toluene, and aliphatic and cyclic ethers.
- the amount of additive added to the solvent will typically be in the region of 3 mol. equiv.: 1 mol. equiv. precursor. Lower amounts of additive are less effective but amounts of more than 3 mol. equiv. may be used.
- the precursors may also be suitable for use in the deposition of praseodymium oxide films by other chemical vapour deposition techniques, such as atomic layer deposition (ALD).
- ALD atomic layer deposition
- the M[OCR 1 (R 2 )(CH 2 ) n X] 3 precursor may also be suitable for the deposition of rare-earth oxide films using non-vapour phase deposition techniques, such as sol-gel deposition and metal-organic decomposition, where the new complexes may undergo a more controlled hydrolysis reactions than simple M(OR) 3 complexes.
- Other volatile rare earth precursors for use in MOCVD, ALD or sol-gel processes according to the invention may include lanthanide (rare-earth) elements, such as La, Ce, Gd, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb and Lu as well as Group IIIB elements including Sc and Y.
- lanthanide (rare-earth) elements such as La, Ce, Gd, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb and Lu
- Group IIIB elements including Sc and Y.
- the precursors according to the invention can also be used, in combination with an appropriate silicon precursor for the MOCVD of lanthanide silicates, LnSi x O y , and with appropriate co-precursors for the MOCVD of multi-component oxides, such as Pr x M y O z containing praseodymium, or other rare earth metals with metals (M) from other groups of the periodic table.
- an appropriate silicon precursor for the MOCVD of lanthanide silicates LnSi x O y
- co-precursors for the MOCVD of multi-component oxides such as Pr x M y O z containing praseodymium, or other rare earth metals with metals (M) from other groups of the periodic table.
- FIG. 1 shows the X-ray crystal structure of [LiPr(mmp) 3 Cl] 2 ;
- FIG. 2 shows XRD spectra of Pr-oxide films deposited at 400° C. and 600° C. from [Pr(mmp) 3 ]. * denotes the dominant (101) reflection of the secondary ⁇ -Pr 2 O 3 phase;
- FIG. 3 is an SEM image of a Pr-Oxide film deposited at 400° C. from [Pr(mmp) 3 ];
- FIG. 4 is an X-ray diffraction pattern of a film of lanthanum oxide deposited at 450° C. from La(mmp) 3 ;
- FIG. 5 is a scanning electron micrograph (SEM) of a fracture sample of the lanthanum oxide film of Example 4.
- FIG. 6 is a 1 H NMR spectrum of a solution of La(mmp) 3 in toluene
- FIG. 7 is a 1 NMR spectrum of a solution of Pr(mmp) 3 in toluene
- FIG. 8 is a 1 H NMR spectrum of a solution of La(mmp) 3 in toluene with 3 mol. equiv. of added tetraglyme;
- FIG. 9 is a 1 H NMR spectrum of a solution of Pr(mmp) 3 in toluene with 3 mol. equiv. of added tetraglyme;
- FIG. 10 shows 1 H NMR data of a solution of La(mmp) 3 in toluene with 3 mol. equiv. of added mmpH;
- FIG. 11 shows 1 H NMR data of a solution of Pr(mmp) 3 in toluene with 3 mol. equiv. of added mmpH.
- IR ( ⁇ cm ⁇ 1 , neat liquid, NaCl plates): 2960 vs; 1496 in; 1458 s; 1383 m; 1357 s; 1274 s, 1229 vs, 1205 s; 1171 vs; 1113 vs; 1086 vs; 997 vs; 967 vs; 943 vs; 915 m; 828 w; 786 m; 730 s; 695 m.
- Pr(mmp) 3 was found to be a suitable precursor for the deposition of praseodymium oxide thin films by MOCVD.
- the praseodymium oxide films were deposited by liquid injection MOCVD using a 0.1M solution of Pr(mmp) 3 in toluene (14 cm 3 ) to give a 0.1 M solution.
- the addition of tetraglyme CH 3 —O—(CH 2 CH 2 O) 4 CH 3 was found to stabilise the Pr(mmp) 3 solution by making it less reactive to air and moisture and improving the transport properties of the precursor.
- the growth conditions used to deposit Pr-oxide thin films by liquid injection MOCVD using a toluene solution of Pr(mmp) 3 are summarised in Table 1.
- Point energy dispersive X-ray analyses of the films indicates only Pr from the thin film and silicon from the underlying substrate material.
- IR ( ⁇ cm ⁇ 1 , neat liquid, NaCl): 2960 vs; 1496 m; 1457 s; 1384 in; 1357 s; 1261 s; 1229 vs; 1172 vs; 1090 vs; 1084 vs; 1001 s; 965 vs; 944 s; 914 m; 841 m; 821 m; 794 s; 730 s; 695 m.
- M Group IIIB element such as Sc and Y, or a lanthanide (rare earth) element such as, Ce, Gd or Nd.
- La(mmp) 3 was found to be a suitable precursor for the deposition of lanthanum oxide thin films by MOCVD. Growth conditions used to deposit La-oxide thin films by liquid injection MOCVD using a toluene solution of La(mmp) 3 are summarised in Table 3.
- the X-ray diffraction pattern (see FIG. 4 of the drawings) of a film deposited at 450° C. exhibits three dominant diffraction peaks attributed to the (100), (002) and (101) reflections measured at 2 ⁇ values of 25.1°, 27.9° and 29.7° respectively.
- the approximate ratio of intensities of these peaks is consistent with the random powder diffraction pattern of La 2 O 3 with a hexagonal structure.
- the width of the observed reflections is notable and consistent with either very small grain size or the transformation of the oxide to the monoclinic LaO(OH) arising from exposure of the film to the ambient environment.
- the atomic composition of the LaO x films was determined using Auger electron spectroscopy (AES), and the results are summarized in Table 4.
- FIG. 5 of the drawings A scanning electron micrograph (SEM) of a fracture sample from that lanthanum oxide film deposited at 450° C. is shown in FIG. 5 of the drawings.
- SEM scanning electron micrograph
- Infrared data recorded as thin film between NaCl plates (cm ⁇ 1 ) 2963 vs; 1496 m; 1457 s; 1384 m; 1357 s; 1275 s; 1231 vs; 1173 vs; 1117 vs; 1086 vs; 1010 s; 968 vs; 915 m; 823 m; 793 a; 730 s; 695 m
- the 1 H NMR spectra of [La(mmp) 3 ] and [Pr(mmp) 3 ] in toluene solution are shown in FIGS. 6 and 7 , respectively.
- the complexity of the 1 H NMR. data indicates that the structure of both these compounds are extremely complex, and particularly in the case of La, the complexity of the spectrum increases with time. This indicates that there is a significant amount of irreversible molecular aggregation in solution. This process is probably due to condensation reactions to form oxo-bridged oligomers; such reactions are well documented in lanthanide alkoxide chemistry.
- the resonances are also broadened, possibly due to inter-molecular ligand exchange reactions, commonly observed in solutions of metal alkoxide complexes.
- Gadolinium oxide films were deposited on Si(100) substrates at 1 mbar using a liquid injection MOCVD reactor. The films were deposited over the temperature range 300-600° C. using a 0.1M solution of [Gd(mmp) 3 ] in toluene, with 3 equivalents of added tetraglyme using the same growth conditions to those given in Table 3. Gadolinium oxide films were also grown on GaAs(100) using a 0.1M solution of [Gd(mmp) 3 ] in toluene, with 3 equivalents of added tetraglyme, in the absence of added oxygen.
- X-ray diffraction data for Gd 2 O 3 films showed that at growth temperatures above 450 ⁇ C , the GdO x films crystallize as Gd 2 O 3 with a C-type structure exhibiting a preferred (111) orientation. At lower growth temperatures the data exhibited no diffraction features suggesting an amorphous disordered structure.
- the diffraction pattern of the Gd 2 O 3 film deposited on GaAs(100) at 450 ⁇ C was dominated by the (222) reflection. This indicates a strong preferred orientation or a heteroepitaxial relation with the underlying GaAs.
- FIGS. 6 and 7 The 1 H NMR spectra of [La(mmp) 3 ] and [Pr(mmp) 3 ] in toluene solution are shown in FIGS. 6 and 7 , respectively.
- Neodymium oxide films were deposited on Si(100) substrates at 1 mbar using a liquid injection MOCVD reactor. The films were deposited over the temperature range 250-600° C. using a 0.1 M solution of [Nd(mmp) 3 ] in toluene, with 3 equivalents of added tetraglyme employing the equivalent growth conditions to those given in Table 3. Neodymium oxide films were also grown on GaAs(100) using a 0.1M solution of [Gd(mmp) 3 ] in toluene, with 3 equivalents of added tetraglyme, in the absence of added oxygen.
Abstract
Description
- This invention concerns precursors for deposition of metal oxide layers or films, methods of making such precursors and methods of depositing metal oxide layers or films using such precursors. This invention is particularly, but not exclusively, concerned with precursors for the growth of praseodymium oxide and other lanthanide (rare earth) metal oxides by chemical vapour deposition.
- Rare-earth oxides M2O3 (M=Pr, La, Gd, Nd) are good insulators due to their large band-gaps (eg. 3.9 eV for Pr2O3, 5.6 eV for Gd2O3), they have high dielectric constants (Gd2O3 κ=16, La2O3 κ=27, Pr2O3 κ=26-30) and higher thermodynamic stability on silicon than ZrO2 and HfO2, making them very attractive materials for high-κ dielectric applications. Another attractive feature of some rare earth oxides (eg. Pr2O3, Gd2O3) is their relatively close lattice match to silicon, offering the possibility of epitaxial growth, eliminating problems related to grain boundaries in polycrystalline films.
- Metalorganic chemical vapour deposition (MOCVD) is an attractive technique for the deposition of these materials, offering the potential for large area growth, good composition control and film uniformity, and excellent conformal step coverage at device dimensions less than 2 μm, which is particularly important in microelectronics applications.
- An essential requirement for a successful MOCVD process is the availability of precursors with the appropriate physical properties for vapour phase transport and a suitable reactivity for deposition. There must be an adequate temperature window between evaporation and decomposition, and for most electronics applications oxide deposition is restricted to temperatures in the region of 500° C., to prevent degradation of the underlying silicon circuitry and metal interconnects.
- Pr2O3 thin films have previously been deposited by physical vapour deposition techniques such as MBE and pulsed laser deposition. Metalorganic chemical vapour deposition (MOCVD) has a number of potential advantages over these techniques, such as large area growth capability, good composition control, high film densities and excellent conformal step coverage, but there have been very few reports on the MOCVD of Praseodymium oxide, due largely to a lack of suitable precursors.
- Recently the MOCVD of a range of praseodymium-oxides (PrO2, Pr6O11, Pr2O3) has been reported using Pr(thd)3 (thd=2,2,6,6,-tetramethylheptane-3,5-dionate) (R. Lo Nigro, R. G. Toro, G. Malandrino, V. Raineri, I. L. Fragalà, Proceedings of EURO CVD 14, Apr. 27-May 2, 2003, Paris France (eds. M. D. Allendorf, F. Maury, F. Teyssandier), Electrochem. Soc. Proc. 2003, 2003-08, 915). However, the deposition temperature used (750° C.) is incompatible with the low deposition temperature generally required for microelectronics applications, where high growth temperatures can lead to problems such as increased dopant diffusion. The use of [Pr(thd)3] may also lead to the presence in the Pr-oxide film of residual carbon, a common contaminant in oxide films grown using metal β-diketonates [Pr(hfa)3(diglyme)] Pr(hfa)3 diglyme (hfa=1,1,1,5,5,5-hexafluoro−2,4-pentanedionate, diglyme ═CH3—O—(CH2CH2O)2CH3) was also investigated by these researchers, but led only to the unwanted oxyfluoride phase, PrOF.
- Metal alkoxides have been widely used in the MOCVD of metal oxides, and generally allow lower growth temperatures than the more thermally stable metal β-diketonate precursors. There are no reports in the literature into the use of rare-earth alkoxide precursors in MOCVD. This is because the large ionic radius of the highly positively charged lanthanide(III) ions leads to the formation of bridging intermolecular metal-oxygen bonds, resulting in the majority of the simple alkoxide complexes being polymeric or oligomeric, with a corresponding low volatility which makes them unsuitable for MOCVD applications.
- An object of this invention is to provide stable volatile rare earth metal oxide precursors suitable for use in chemical vapour deposition techniques.
- It has been surprisingly found that the donor functionalised alkoxy ligand 1-methoxy-2-methyl-2-propanolate [OCMe2CH2OMe, mmp] is effective in inhibiting oligomerisation in praseodymium alkoxide complexes, as well as increasing the ambient stability of the complexes.
- Accordingly the present invention provides rare earth metal precursors for use in MOCVD techniques having a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
- Preferred precursors according to the invention have the following general formula:
-
M[OCR1(R2)(CH2)nX]3 - wherein M is a rare earth metal, especially praseodymium, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group, n=1 to 4.
- The preferred ligand of the formula OCR1(R2)(CH2)nX (n=1) is 1-methoxy-2-methyl-2-propanolate (mmp) [OCMe2CH2OMe], but other donor functionalised alkoxide ligands may be used. These may include but are not limited to OCH(Me)CH2OMe, OCEt2CH2OMe, OCH(Et)CH2OMe, OC(Pri)2CH2OMe, OCH(Pri)CH2OMe, OC(But)2CH2OMe, OCH(But)CH2OMe, OCH(But)CH2OEt, OC(But)2CH2OEt, OC(Pri)2CH2OEt, OCH(But)CH2NEt2, OC(Pri)2CH2OC2H4OMe and OC(But)(CH2OPri)2.
- The invention further provides a first method of making rare earth metal oxide precursors for use in MOCVD techniques comprising reacting HOCR1(R2)(CH2)nX, wherein R1, R2 and X are as defined above, such as mmpH, with the corresponding rare earth metal alkylamide M(NR2)3 or silylamide precursor M(N(SiR3)2)3, especially praseodymium silylamide precursor, Pr{N(SiMe3)2}3, in appropriate molar proportions, wherein R=alkyl, such as, for example, Me, Et and Pri.
- According to the invention an alternative method of general synthesis of lanthanide and rare earth element complexes of the formula M[OCR1(R2)CH2X]3 as defined above, such as, Ln(mmp)3, involves the salt exchange reaction of Ln(NO3)3(tetraglyme) with appropriate molar equivalents of Na(M[OCR1(R2)CH2X]3, such as Na(mmp), in tetrahydrofuran solvent. A similar method may be used for the preparation of Sc(mmp)3 and Y(mmp)3.
- Precursors according to the invention may be used in depositing single or mixed oxide layers or films by conventional MOCVD, in which the precursor is contained in a metalorganic bubbler, or by liquid injection MOCVD, in which the precursor is dissolved in an appropriate inert organic solvent and then evaporated into the vapour phase using a heated evaporator. Appropriate solvents include aliphatic hydrocarbons, such as hexane, heptane and nonane, aromatic hydrocarbons such as toluene, and aliphatic and cyclic ethers. Additives such as polydentate ethers including diglyme, CH3—O—(CH2CH2O)2CH3, triglyme, CH3—O—(CH2CH2O)3CH3, tetraglyme, CH3—O—(CH2CH2O)4CH3, and donor functionalised alcohols such as 1-methoxy-2-methyl-2-propanol HOCMe2CH2OMe (mmpH) may also be added to the solvent, as these may render the precursors of the invention, especially Ln(mmp)3 (Ln=lanthanide such as La, Pr, Gd, Nd etc.), less reactive to air and moisture and may improve the evaporation characteristics of the precursor solution. The amount of additive added to the solvent will typically be in the region of 3 mol. equiv.: 1 mol. equiv. precursor. Lower amounts of additive are less effective but amounts of more than 3 mol. equiv. may be used.
- The precursors may also be suitable for use in the deposition of praseodymium oxide films by other chemical vapour deposition techniques, such as atomic layer deposition (ALD).
- The M[OCR1(R2)(CH2)nX]3 precursor may also be suitable for the deposition of rare-earth oxide films using non-vapour phase deposition techniques, such as sol-gel deposition and metal-organic decomposition, where the new complexes may undergo a more controlled hydrolysis reactions than simple M(OR)3 complexes.
- Other volatile rare earth precursors for use in MOCVD, ALD or sol-gel processes according to the invention may include lanthanide (rare-earth) elements, such as La, Ce, Gd, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb and Lu as well as Group IIIB elements including Sc and Y.
- The precursors according to the invention can also be used, in combination with an appropriate silicon precursor for the MOCVD of lanthanide silicates, LnSixOy, and with appropriate co-precursors for the MOCVD of multi-component oxides, such as PrxMyOz containing praseodymium, or other rare earth metals with metals (M) from other groups of the periodic table.
- The invention will now be further described by means of the following Examples and with reference to the accompanying drawings, in which:
-
FIG. 1 shows the X-ray crystal structure of [LiPr(mmp)3Cl]2; -
FIG. 2 shows XRD spectra of Pr-oxide films deposited at 400° C. and 600° C. from [Pr(mmp)3]. * denotes the dominant (101) reflection of the secondary θ-Pr2O3 phase; -
FIG. 3 is an SEM image of a Pr-Oxide film deposited at 400° C. from [Pr(mmp)3]; -
FIG. 4 is an X-ray diffraction pattern of a film of lanthanum oxide deposited at 450° C. from La(mmp)3; -
FIG. 5 is a scanning electron micrograph (SEM) of a fracture sample of the lanthanum oxide film of Example 4; -
FIG. 6 is a 1H NMR spectrum of a solution of La(mmp)3 in toluene; -
FIG. 7 is a 1 NMR spectrum of a solution of Pr(mmp)3 in toluene; -
FIG. 8 is a 1H NMR spectrum of a solution of La(mmp)3 in toluene with 3 mol. equiv. of added tetraglyme; -
FIG. 9 is a 1H NMR spectrum of a solution of Pr(mmp)3 in toluene with 3 mol. equiv. of added tetraglyme; -
FIG. 10 shows 1H NMR data of a solution of La(mmp)3 in toluene with 3 mol. equiv. of added mmpH; and -
FIG. 11 shows 1H NMR data of a solution of Pr(mmp)3 in toluene with 3 mol. equiv. of added mmpH. - MmpH (0.487 cm3, 4.23 mmol) was added to a solution of [Pr{N(SiMe3)2}3] (0.878 g, 1.41 mmol) in toluene (80 cm3). The solution was stirred at room temperature for 10 min and then solvent and HN(SiMe3)2 was removed in vacuo to give a green oil.
- Microanalysis: Found. C, 38.0; H, 6.60%. Calculated. For C15H33O6Pr C, 40.01; H, 7.39%.
- IR (ν cm−1, neat liquid, NaCl plates): 2960 vs; 1496 in; 1458 s; 1383 m; 1357 s; 1274 s, 1229 vs, 1205 s; 1171 vs; 1113 vs; 1086 vs; 997 vs; 967 vs; 943 vs; 915 m; 828 w; 786 m; 730 s; 695 m.
- NMR spectroscopy (CDCl3; 400 MHz): (All resonances are broadened due to the paramagnetic Pr3+ (4f2). Integrals of these broad resonances are not reported due to the lack of precision): 100.5, 72.5, 69.7, 67.0, 64.0, 63.7, 62.4, 60.7, 58.4, 57.0, 56.0, 54.0, 53.5, 50.5, 48.2, 47.2, 42.2, 40.7, 19.1, 18.6, 18.0, 17.7, 15.3, 13.9, 12.7, 11.2, 3.1, 1.2, −4.7, −10.5, −11.8, −12.5, −13.0, −15.5, −19.0, −20.5, −24.4, −30.2, −40.1, −43.6, −45.3, −46.2, −54.0
- The liquid nature of Pr(mmp)3 precludes structural characterisation by single crystal X-ray diffraction, but In the presence of LiCl a crystalline complex with the formula [LiPr(mmp)3Cl]2 was isolated, providing further good evidence that the stoichiometry of the oil was [Pr(mmp)3]. This complex was characterized by single crystal X-ray diffraction and its structure is shown in
FIG. 1 of the drawings. - Pr(mmp)3 was found to be a suitable precursor for the deposition of praseodymium oxide thin films by MOCVD. The praseodymium oxide films were deposited by liquid injection MOCVD using a 0.1M solution of Pr(mmp)3 in toluene (14 cm3) to give a 0.1 M solution. The addition of tetraglyme CH3—O—(CH2CH2O)4CH3 was found to stabilise the Pr(mmp)3 solution by making it less reactive to air and moisture and improving the transport properties of the precursor. The growth conditions used to deposit Pr-oxide thin films by liquid injection MOCVD using a toluene solution of Pr(mmp)3 are summarised in Table 1.
-
TABLE 1 Reactor pressure 1 mbar Evaporator temperature 170° C. Substrate temperature 350-600° C. Precursor solution concentration 0.1M in toluene with 3 mol equiv. of added tetraglyme Precursor solution injection rate 8 cm3 hr−1 Argon flow rate 400 cm3 min−1 Oxygen flow rate 100 cm3 min−1 Substrates Si(100) Typical oxide growth rates 0.2 μm hr−1
The identity of the films was confirmed as praseodymium oxide by as X-ray diffraction analysis (seeFIG. 2 of the drawings), which indicated that the films comprise a major β-Pr6O11 phase with a minor component of the hexagonal θ-Pr2O3 phase. Reports elsewhere (R. Lo Nigro, R. G. Toro, G. Malandrino, V. Raineri, I. L. Fragalà, Proceedings of EURO CVD 14, Apr. 27-May 2, 2003, Paris France (eds. M. D. Allendorf, F. Maury, F. Teyssandier), Electrochem. Soc. Proc. 2003, 2003-08, 915) indicate that the proportions of the β-Pr6O11 phase and the θ-Pr2O3 can be controlled via the partial pressure of oxygen used during MOCVD growth. - Analysis of the films by scanning electron microscropy (SEM) showed that all the as-grown films exhibited smooth surfaces and uniform cross sectional thicknesses. The cross section of a film grown at 400° C. is shown in
FIG. 3 of the drawings and shows no evidence of features such as columnar growth, which has been observed in other high-k dielectric films such as HfO2 and ZrO2. - Point energy dispersive X-ray analyses of the films indicates only Pr from the thin film and silicon from the underlying substrate material.
- Further analysis by auger electron spectroscopy (AES) analysis of Pr-oxide films deposited from [Pr(mmp)3] (see Table 2) showed that the films are pure Pr-oxide, with no detectable carbon.
-
TABLE 2 Deposition temperature Composition (at. %) Pr/O Sample (° C.) Pr O C ratio 1 350 30.3 69.7 ND 2.3 4 600 32.9 67.1 ND 2.0 - MmpH (3 mol. equiv.) was added to a solution of [La{N(SiMe3)2}3] (1 mol equiv.) in toluene. The solution was stirred at room temperature for 10 min and then solvent and HN(SiMe3)2 was removed in vacuo to give the product.
- Microanalysis: Found. C, 40.0; H, 7.4%. Calcd. For C15H33O6La C, 40.2, H, 7.4%.
- IR (ν cm−1, neat liquid, NaCl): 2960 vs; 1496 m; 1457 s; 1384 in; 1357 s; 1261 s; 1229 vs; 1172 vs; 1090 vs; 1084 vs; 1001 s; 965 vs; 944 s; 914 m; 841 m; 821 m; 794 s; 730 s; 695 m.
- NMR spectroscopy C6D6 (400 MHz) Main resonances: δ (ppm): 3.16 br singlet; 3.08 br singlet (total 5H); 2.65 singlet; 1.27 singlet (6H). Other resonances 3.2-4 ppm, complex pattern (total approx 2H); 1.2-1.8 ppm, complex pattern (total approx 4H).
- The same general preparative method can be used for the synthesis of other M(mmp)3 complexes where M=Group IIIB element such as Sc and Y, or a lanthanide (rare earth) element such as, Ce, Gd or Nd.
- La(mmp)3 was found to be a suitable precursor for the deposition of lanthanum oxide thin films by MOCVD. Growth conditions used to deposit La-oxide thin films by liquid injection MOCVD using a toluene solution of La(mmp)3 are summarised in Table 3.
-
TABLE 3 Substrate Temperature 300-600° C. Evaporator Temperature 170° C. Pressure 1 mbar Injection Rate 8 cm3h−1 Solvent Toluene + 3 mol. eq. tetraglyme Concentration 0.1M Argon flow rate 400 cm3min−1 Oxygen flow rate 100 cm3min−1 Run time 1 h - The X-ray diffraction pattern (see
FIG. 4 of the drawings) of a film deposited at 450° C. exhibits three dominant diffraction peaks attributed to the (100), (002) and (101) reflections measured at 2θ values of 25.1°, 27.9° and 29.7° respectively. The approximate ratio of intensities of these peaks is consistent with the random powder diffraction pattern of La2O3 with a hexagonal structure. The width of the observed reflections is notable and consistent with either very small grain size or the transformation of the oxide to the monoclinic LaO(OH) arising from exposure of the film to the ambient environment. - The atomic composition of the LaOx films was determined using Auger electron spectroscopy (AES), and the results are summarized in Table 4.
-
TABLE 4 AES analysis of La-oxide films grown by MOCVD Argon flow Deposition rate Oxygen Com- Film temperature (cm3 flow rate position (atom %) no. (° C.) min−1) (cm3 min−1) La O O/La 317 300 400 100 29.0 71.0 2.4 314 350 400 100 35.0 65.0 1.8 318 400 400 100 33.8 66.2 1.9 309 450 400 100 31.3 68.7 2.2 316 500 400 100 33.0 67.0 2.0 313 550 400 100 33.7 66.3 2.0 315 600 400 100 31.8 68.2 2.1 319 450 500 0 34.4 65.6 1.9 320 450 250 250 32.3 67.7 2.1 - The O:La ratios of 1.8-2.4 are consistent with the films being La2O3 containing excess oxygen (expected O:La ratio in La2O3=1.5). Carbon was not detected in any of the films at the estimated detection limit of <0.5 at.-% and carbon-free La-oxide films were obtained, even in the absence of oxygen, so that [La(mmp)3] is effectively acting as a “single-source” oxide precursor.
- A scanning electron micrograph (SEM) of a fracture sample from that lanthanum oxide film deposited at 450° C. is shown in
FIG. 5 of the drawings. A columnar growth habit is discernable which has associated ‘hillock’ features on the free growth surface causing a fine surface roughening effect. - MmpH (3 mol. equiv.) was added to a solution of [Nd{N(SiMe3)2}3] (1 mol. equiv.) in toluene. The solution was stirred at room temperature for 10 min. and then solvent and HN(SiMe3)2 was removed in vacuo to give the product.
- Microanalysis: Found: C, 38.8; H, 6.9%. Calcd. For C15H33O6Nd, C, 39.7; H, 7.33%.
- Infrared data: recorded as thin film between NaCl plates (cm−1) 2963 vs; 1496 m; 1457 s; 1384 m; 1357 s; 1275 s; 1231 vs; 1173 vs; 1117 vs; 1086 vs; 1010 s; 968 vs; 915 m; 823 m; 793 a; 730 s; 695 m
- 1H NMR (CDCl3) [resonances are broadened due to paramagnetism of Nd3+ (4f3)]: 35.1, 31.7, 30.9, 18.8, 17.4, 15.8, 12.6, 11.5, 8.2, 5.6, 1.2, −9.0, −9.6, −18.2, −24.5, −25.6, −26.0, −55.8, −57.5
- The 1H NMR spectra of [La(mmp)3] and [Pr(mmp)3] in toluene solution are shown in
FIGS. 6 and 7 , respectively. The complexity of the 1H NMR. data indicates that the structure of both these compounds are extremely complex, and particularly in the case of La, the complexity of the spectrum increases with time. This indicates that there is a significant amount of irreversible molecular aggregation in solution. This process is probably due to condensation reactions to form oxo-bridged oligomers; such reactions are well documented in lanthanide alkoxide chemistry. The resonances are also broadened, possibly due to inter-molecular ligand exchange reactions, commonly observed in solutions of metal alkoxide complexes. - Significantly, the addition of 3 mol. equivalents of the polydentate oxygen donor ligand tetraglyme, (CH3—O—(CH2CH2O)4CH3), to the precursor solutions results in much simpler 1H NMR spectra (
FIGS. 8 and 9 ). This strongly suggests that the presence of (CH3—O—(CH2CH2O)4CH3) inhibits molecular aggregation. The observation that the tetraglyme resonances are not subject to paramagnetic shifting in [Pr(mmp)3][tetraglyme] indicates that the tetraglyme is not bonded directly to Pr, and we, therefore, conclude that stable adducts of the type [Ln(mmp)3(tetraglyme)] are not formed. - The addition of one mole excess of [mmpH] (HOCMe2CH2OMe) to toluene solutions of La(mmp3) or Pr(mmp)3 also results in simpler 1H NMR spectra (see
FIGS. 10 and 11 of the drawings) and has a similar stabilizing effect. The simplicity of the 1H NMR spectra indicates that mmp and mmpH are in rapid exchange and there is no uncoordinated mmpH. The addition of tetraglyme or mmpH to solutions of [Ln(mmp)3] was found to enhance air/moisture stability as well as prevent aggregate formation. The mechanism of this stabilization has not been established, but it is likely to be due to some form of shielding of the lanthanide metal centre from oxygen atoms on mmp ligands on neighbouring molecules. - [Gd(mmp)3] was synthesised by the addition of mmpH (3 mol. equiv.) to a solution of [Gd{N(SiMe3)2}3] (1 mol equiv.) in toluene. The solution was stirred at room temperature for 10 min and then the solvent and liberated HN(SiMe3)2 were removed in vacuo to give the product as a green oil. The product was confirmed by elemental microanalysis for C and H.
- Gadolinium oxide films were deposited on Si(100) substrates at 1 mbar using a liquid injection MOCVD reactor. The films were deposited over the temperature range 300-600° C. using a 0.1M solution of [Gd(mmp)3] in toluene, with 3 equivalents of added tetraglyme using the same growth conditions to those given in Table 3. Gadolinium oxide films were also grown on GaAs(100) using a 0.1M solution of [Gd(mmp)3] in toluene, with 3 equivalents of added tetraglyme, in the absence of added oxygen.
- The films grown on Si(100) and GaAs(100) substrates were confirmed to be Gadolinium oxide by Auger electron spectroscopy (AES) as shown in the following Table 5:—
-
TABLE 5 Atomic composition (at.-%) of gadolinium oxide films measured by AES* Depo- Argon Oxygen sition flow flow rate Film temp. rate (cm3 (cm3 no. Substrate (° C.) min−1) min−1) Gd O O/Gd 1 Si(100) 450 500 0 37.6 62.4 1.7 2 GaAs(100) 450 500 0 36.9 63.1 1.7 *H not analysed for. - X-ray diffraction data for Gd2O3 films showed that at growth temperatures above 450ÙC , the GdOx films crystallize as Gd2O3 with a C-type structure exhibiting a preferred (111) orientation. At lower growth temperatures the data exhibited no diffraction features suggesting an amorphous disordered structure.
- The diffraction pattern of the Gd2O3 film deposited on GaAs(100) at 450ÙC was dominated by the (222) reflection. This indicates a strong preferred orientation or a heteroepitaxial relation with the underlying GaAs.
- The 1H NMR spectra of [La(mmp)3] and [Pr(mmp)3] in toluene solution are shown in
FIGS. 6 and 7 , respectively. The addition of 3 mole equivalents of the polydentate oxygen donor ligand tetraglyme, —(CH3—O—(CH2CH2O)4CH3) to the precursor solutions of M(mmp)3 (M=La, Pr) results in much simpler 1H NMR spectra (FIGS. 8 and 9 of the drawings) and renders the precursor solutions less air sensitive, and significantly improves the evaporation characteristics of the precursor solution in liquid injection MOCVD applications. - This strongly suggests that the presence of (CH3—O—(CH2CH2O)4CH3) inhibits molecular aggregation. The observation that the tetraglyme resonances are not subject to paramagnetic shifting in [Pr(mmp)3][tetraglyme] indicates that the tetraglyme is not bonded directly to Pr, and we, therefore, conclude that stable adducts of the type [Ln(mmp)3(tetraglyme)] are not formed.
- The addition of one mole excess of 1-methoxy-2-methyl-2-propanol, [HOCMe2CH2OMe] (mmpH) to solutions of M(mmp)3 (M=rare earth element) in toluene has a similar stabilizing effect (see
FIGS. 10 and 11 ). In the case of [Ln(mmp)3(mmpH)] the simplicity of the 1H NMR spectrum indicates that mmp and mmpH are in rapid exchange and there is no uncoordinated mmpH. The addition of tetraglyme or mmpH to solutions of [Ln(mmp)3] was found to enhance air/moisture stability as well as prevent aggregate formation. - The mechanism of this stabilization has not been established, but it is likely to be due to some form of shielding of the Ln metal centre from oxygen atoms on mmp ligands on neighbouring molecules.
- Neodymium oxide films were deposited on Si(100) substrates at 1 mbar using a liquid injection MOCVD reactor. The films were deposited over the temperature range 250-600° C. using a 0.1 M solution of [Nd(mmp)3] in toluene, with 3 equivalents of added tetraglyme employing the equivalent growth conditions to those given in Table 3. Neodymium oxide films were also grown on GaAs(100) using a 0.1M solution of [Gd(mmp)3] in toluene, with 3 equivalents of added tetraglyme, in the absence of added oxygen.
- The films grown on Si(100) and GaAs(100) substrates were confirmed to be neodymium oxide, Nd2O3, by Auger electron spectroscopy (AES) as shown in the following Table 6:—
-
TABLE 6 Atomic composition (at.-%) of the NdOx films measured by AES* Argon Oxygen flow flow Deposition rate rate Film temperature (cm3) (cm3 no. Substrate (° C.) min−1) min−1) Nd O O/Nd 1 Si(100) 300 400 100 37 63 1.7 2 Si(100) 450 400 100 40.1 59.9 1.5 3 Si(100) 500 400 100 38.7 61.3 1.6 4 Si(100) 450 500 0 41.2 58.8 1.4 5 Si(100) 450 450 50 41.8 58.2 1.4 6 Si(100) 450 350 150 41.7 58.3 1.4 7 Si(100) 450 300 200 45.5 54.5 1.2 8 Si(100) 450 250 250 42.1 57.9 1.4 9 GaAs(100) 450 500 0 40.6 59.4 1.5 *H not analysed for
Claims (40)
M[OCR1(R2)(CH2)nX]3
M[OCR1(R2)(CH2)nX]3
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Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504195A (en) * | 1993-01-22 | 1996-04-02 | Rhone-Poulenc Chimie | Rare earth compounds and their preparation |
US5625587A (en) * | 1995-07-12 | 1997-04-29 | Virginia Polytechnic Institute And State University | Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices |
US5866204A (en) * | 1996-07-23 | 1999-02-02 | The Governors Of The University Of Alberta | Method of depositing shadow sculpted thin films |
US6080283A (en) * | 1997-11-25 | 2000-06-27 | Eveready Battery Company, Inc. | Plasma treatment for metal oxide electrodes |
US6255121B1 (en) * | 1999-02-26 | 2001-07-03 | Symetrix Corporation | Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor |
US6430458B1 (en) * | 1996-09-23 | 2002-08-06 | Applied Materials, Inc. | Semi-selective chemical vapor deposition |
US20020172768A1 (en) * | 2001-05-21 | 2002-11-21 | Nec Corporation | Method for vapor deposition of a metal compound film |
US20030072882A1 (en) * | 2001-08-03 | 2003-04-17 | Jaakko Niinisto | Method of depositing rare earth oxide thin films |
US6599447B2 (en) * | 2000-11-29 | 2003-07-29 | Advanced Technology Materials, Inc. | Zirconium-doped BST materials and MOCVD process forming same |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US7108747B1 (en) * | 1998-09-11 | 2006-09-19 | Asm International N.V. | Method for growing oxide thin films containing barium and strontium |
US20080176375A1 (en) * | 2007-01-19 | 2008-07-24 | Qimonda Ag | Method for forming a dielectric layer |
US7419698B2 (en) * | 2001-10-26 | 2008-09-02 | Sigma-Aldrich Co. | Precursors for chemical vapor deposition |
US7557229B2 (en) * | 2002-11-15 | 2009-07-07 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
US7736446B2 (en) * | 2007-10-31 | 2010-06-15 | Kabushiki Kaisha Toshiba | Method for manufacturing a lanthanum oxide compound |
US7927661B2 (en) * | 2003-03-17 | 2011-04-19 | Sigma-Aldrich Co. | Methods of depositing a metal oxide layer or film using a rare earth metal precursor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE59308853D1 (en) | 1992-03-18 | 1998-09-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Volatile rare earth metal alkoxides, in particular for the production of rare earth metal oxides, and alcohols for synthesizing volatile compounds |
JP3348964B2 (en) | 1994-04-15 | 2002-11-20 | 北興化学工業株式会社 | Method for producing rare earth metal alkoxy alcoholate |
JP3472939B2 (en) | 1994-05-25 | 2003-12-02 | 北興化学工業株式会社 | Method for producing lanthanum-based perovskite-type composite oxide |
JP3532282B2 (en) | 1995-02-15 | 2004-05-31 | ダイハツ工業株式会社 | Method for producing perovskite-type composite oxide |
TW518368B (en) | 1999-08-17 | 2003-01-21 | Promos Technologies Inc | Method for depositing arsenic-containing film |
US20020015855A1 (en) | 2000-06-16 | 2002-02-07 | Talex Sajoto | System and method for depositing high dielectric constant materials and compatible conductive materials |
WO2003004721A1 (en) | 2001-07-05 | 2003-01-16 | Asahi Denka Kogyo Kabushiki Kaisha | Feed material for chemical vapor deposition and process for producing ceramic from the same |
JP2002363122A (en) | 2002-04-25 | 2002-12-18 | Hokko Chem Ind Co Ltd | New alkoxyalcoholate of rare earth metal |
TWI467045B (en) | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing high-k dielectric films using cerium-based precursors |
TW200949939A (en) | 2008-05-23 | 2009-12-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing using titanium-based β -diketonate precursors |
-
2004
- 2004-03-11 DE DE04719537T patent/DE04719537T1/en active Pending
- 2004-03-11 JP JP2006505949A patent/JP4575362B2/en not_active Expired - Fee Related
- 2004-03-11 KR KR1020117023671A patent/KR20110118735A/en not_active Application Discontinuation
- 2004-03-11 AT AT04719537T patent/ATE397612T1/en not_active IP Right Cessation
- 2004-03-11 KR KR1020057017513A patent/KR101120150B1/en active IP Right Grant
- 2004-03-11 EP EP04719537A patent/EP1603924B1/en not_active Expired - Lifetime
- 2004-03-11 DE DE602004014258T patent/DE602004014258D1/en not_active Expired - Lifetime
- 2004-03-11 WO PCT/GB2004/001047 patent/WO2004083479A2/en active IP Right Grant
- 2004-03-11 US US10/548,946 patent/US7927661B2/en not_active Expired - Fee Related
- 2004-03-11 GB GB0405441A patent/GB2399568B/en not_active Expired - Fee Related
- 2004-03-17 TW TW093107221A patent/TWI327176B/en not_active IP Right Cessation
-
2011
- 2011-04-12 US US13/036,602 patent/US20110184156A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504195A (en) * | 1993-01-22 | 1996-04-02 | Rhone-Poulenc Chimie | Rare earth compounds and their preparation |
US5625587A (en) * | 1995-07-12 | 1997-04-29 | Virginia Polytechnic Institute And State University | Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices |
US5866204A (en) * | 1996-07-23 | 1999-02-02 | The Governors Of The University Of Alberta | Method of depositing shadow sculpted thin films |
US6430458B1 (en) * | 1996-09-23 | 2002-08-06 | Applied Materials, Inc. | Semi-selective chemical vapor deposition |
US6080283A (en) * | 1997-11-25 | 2000-06-27 | Eveready Battery Company, Inc. | Plasma treatment for metal oxide electrodes |
US7108747B1 (en) * | 1998-09-11 | 2006-09-19 | Asm International N.V. | Method for growing oxide thin films containing barium and strontium |
US6255121B1 (en) * | 1999-02-26 | 2001-07-03 | Symetrix Corporation | Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor |
US6599447B2 (en) * | 2000-11-29 | 2003-07-29 | Advanced Technology Materials, Inc. | Zirconium-doped BST materials and MOCVD process forming same |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6846743B2 (en) * | 2001-05-21 | 2005-01-25 | Nec Corporation | Method for vapor deposition of a metal compound film |
US20020172768A1 (en) * | 2001-05-21 | 2002-11-21 | Nec Corporation | Method for vapor deposition of a metal compound film |
US20030072882A1 (en) * | 2001-08-03 | 2003-04-17 | Jaakko Niinisto | Method of depositing rare earth oxide thin films |
US6858546B2 (en) * | 2001-08-03 | 2005-02-22 | Asm International, Nv | Method of depositing rare earth oxide thin films |
US7419698B2 (en) * | 2001-10-26 | 2008-09-02 | Sigma-Aldrich Co. | Precursors for chemical vapor deposition |
US7557229B2 (en) * | 2002-11-15 | 2009-07-07 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
US7927661B2 (en) * | 2003-03-17 | 2011-04-19 | Sigma-Aldrich Co. | Methods of depositing a metal oxide layer or film using a rare earth metal precursor |
US20080176375A1 (en) * | 2007-01-19 | 2008-07-24 | Qimonda Ag | Method for forming a dielectric layer |
US7736446B2 (en) * | 2007-10-31 | 2010-06-15 | Kabushiki Kaisha Toshiba | Method for manufacturing a lanthanum oxide compound |
Non-Patent Citations (1)
Title |
---|
Paúl A, Elmrabet S, Odriozola JA. Low cost rare earth elements deposition method for enhancing the oxidation resistance at high temperature of Cr2O3 and Al2O3 forming alloys. 2001 J. Alloys Compd. 323-324: 70-73. * |
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Also Published As
Publication number | Publication date |
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GB2399568B (en) | 2007-03-21 |
GB0405441D0 (en) | 2004-04-21 |
US20070190684A1 (en) | 2007-08-16 |
EP1603924A2 (en) | 2005-12-14 |
TW200424340A (en) | 2004-11-16 |
EP1603924B1 (en) | 2008-06-04 |
DE04719537T1 (en) | 2006-11-30 |
GB2399568A (en) | 2004-09-22 |
KR20050111389A (en) | 2005-11-24 |
JP4575362B2 (en) | 2010-11-04 |
TWI327176B (en) | 2010-07-11 |
WO2004083479A2 (en) | 2004-09-30 |
WO2004083479A3 (en) | 2004-12-16 |
KR20110118735A (en) | 2011-10-31 |
DE602004014258D1 (en) | 2008-07-17 |
US7927661B2 (en) | 2011-04-19 |
KR101120150B1 (en) | 2012-03-23 |
ATE397612T1 (en) | 2008-06-15 |
JP2006521337A (en) | 2006-09-21 |
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