US20110155235A1 - Polyimide polymers for flexible electrical device substrate materials and flexible electrical devices comprising the same - Google Patents
Polyimide polymers for flexible electrical device substrate materials and flexible electrical devices comprising the same Download PDFInfo
- Publication number
- US20110155235A1 US20110155235A1 US12/824,220 US82422010A US2011155235A1 US 20110155235 A1 US20110155235 A1 US 20110155235A1 US 82422010 A US82422010 A US 82422010A US 2011155235 A1 US2011155235 A1 US 2011155235A1
- Authority
- US
- United States
- Prior art keywords
- flexible electrical
- electrical device
- polyimide
- substrate
- mole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 64
- 239000004642 Polyimide Substances 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 229920000642 polymer Polymers 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 title claims abstract description 13
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 19
- 125000003367 polycyclic group Chemical group 0.000 claims abstract description 13
- 125000003118 aryl group Chemical group 0.000 claims abstract description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 4
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 claims description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 39
- 238000000034 method Methods 0.000 description 29
- XLOGCGOPKPCECW-UHFFFAOYSA-N 1719-83-1 Chemical compound C1=CC2C3C(=O)OC(=O)C3C1C1C(=O)OC(=O)C21 XLOGCGOPKPCECW-UHFFFAOYSA-N 0.000 description 27
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 26
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- 0 C.C.C.C.CCN1C(=O)B2(C(=O)N(*N3C(=O)B4(C(=O)N(C)C4=O)C3=O)C2=O)C1=O Chemical compound C.C.C.C.CCN1C(=O)B2(C(=O)N(*N3C(=O)B4(C(=O)N(C)C4=O)C3=O)C2=O)C1=O 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 150000004985 diamines Chemical class 0.000 description 10
- DBZVBKLKGDGTQE-UHFFFAOYSA-N CC1=CC=C(OC2=CC=C(C(C)(C)C3=CC=C(OC4=CC=C(C)C=C4)C=C3)C=C2)C=C1 Chemical compound CC1=CC=C(OC2=CC=C(C(C)(C)C3=CC=C(OC4=CC=C(C)C=C4)C=C3)C=C2)C=C1 DBZVBKLKGDGTQE-UHFFFAOYSA-N 0.000 description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- JNGQTSDKVKDBKC-UHFFFAOYSA-N C=C1OC(=O)C2C3C=CC(C12)C1C(=C)OC(=O)C31 Chemical compound C=C1OC(=O)C2C3C=CC(C12)C1C(=C)OC(=O)C31 JNGQTSDKVKDBKC-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- ABDKGLGGOFLVOG-UHFFFAOYSA-N CC(C)C1=CC=C(OC2=CC=C(C(C)(C)C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)(C(F)(F)F)C(F)(F)F)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(S(=O)(=O)C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1CCC(CC2CCC(C(C)C)CC2)CC1.CC1=C(C2=CC=C(C(C)C)C=C2C(F)(F)F)C=CC(C(C)C)=C1.CC1=CC(C(C)C)=CC=C1C1=C(C)C=C(C(C)C)C=C1 Chemical compound CC(C)C1=CC=C(OC2=CC=C(C(C)(C)C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)(C(F)(F)F)C(F)(F)F)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(S(=O)(=O)C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1CCC(CC2CCC(C(C)C)CC2)CC1.CC1=C(C2=CC=C(C(C)C)C=C2C(F)(F)F)C=CC(C(C)C)=C1.CC1=CC(C(C)C)=CC=C1C1=C(C)C=C(C(C)C)C=C1 ABDKGLGGOFLVOG-UHFFFAOYSA-N 0.000 description 4
- MODATJUUHDLRFF-UHFFFAOYSA-N CC(C)C1=CC=C(OC2=CC=C(C(C)C)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=CC(C(C)C)=C2)C=C1 Chemical compound CC(C)C1=CC=C(OC2=CC=C(C(C)C)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C(C)C)C=C4)C=C3)C=C2)C=C1.CC(C)C1=CC=C(OC2=CC=CC(C(C)C)=C2)C=C1 MODATJUUHDLRFF-UHFFFAOYSA-N 0.000 description 4
- SCKJMSOLHSTLCC-UHFFFAOYSA-N CC1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C)C=C4)C=C3)C=C2)C=C1 Chemical compound CC1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(C)C=C4)C=C3)C=C2)C=C1 SCKJMSOLHSTLCC-UHFFFAOYSA-N 0.000 description 4
- 150000004984 aromatic diamines Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- KMKWGXGSGPYISJ-UHFFFAOYSA-N CC(C)(C1=CC=C(OC2=CC=C(N)C=C2)C=C1)C1=CC=C(OC2=CC=C(N)C=C2)C=C1 Chemical compound CC(C)(C1=CC=C(OC2=CC=C(N)C=C2)C=C1)C1=CC=C(OC2=CC=C(N)C=C2)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 3
- HYDATEKARGDBKU-UHFFFAOYSA-N NC1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(N)C=C4)C=C3)C=C2)C=C1 Chemical compound NC1=CC=C(OC2=CC=C(C3=CC=C(OC4=CC=C(N)C=C4)C=C3)C=C2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- HGWASQZBYHKNLO-UHFFFAOYSA-N CC(C)C1C2C=CC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CC(C(C)C)C(C(C)C)(C2)C1C(C)C.CC(C)C1C2CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CCC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2CCC(C1C(C)C)C(C(C)C)C2C(C)C Chemical compound CC(C)C1C2C=CC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CC(C(C)C)C(C(C)C)(C2)C1C(C)C.CC(C)C1C2CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CCC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2CCC(C1C(C)C)C(C(C)C)C2C(C)C HGWASQZBYHKNLO-UHFFFAOYSA-N 0.000 description 2
- YWYHGNUFMPSTTR-UHFFFAOYSA-N CC1=CC=C(OC2=CC=C(C)C=C2)C=C1 Chemical compound CC1=CC=C(OC2=CC=C(C)C=C2)C=C1 YWYHGNUFMPSTTR-UHFFFAOYSA-N 0.000 description 2
- QHHKLPCQTTWFSS-UHFFFAOYSA-N O=C1OC(=O)C2=CC(C(C3=CC=C4C(=O)OC(=O)C4=C3)(C(F)(F)F)C(F)(F)F)=CC=C12 Chemical compound O=C1OC(=O)C2=CC(C(C3=CC=C4C(=O)OC(=O)C4=C3)(C(F)(F)F)C(F)(F)F)=CC=C12 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- KIDLTTWCGOLNPF-UHFFFAOYSA-N CC(C)C1C2C=CC(C1C(C)(C)C)C(C(C)(C)C)C2C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)(C)C)C2C(C)C.CC(C)C1C2CC(C(C)C)C(C(C)C)(C2)C1C(C)C.CC(C)C1C2CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CCC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2CCC(C1C(C)(C)C)C(C(C)(C)C)C2C(C)(C)C.CC(C)C1CC2C=CC1(C(C)C)C(C(C)(C)C)C2C(C)(C)C Chemical compound CC(C)C1C2C=CC(C1C(C)(C)C)C(C(C)(C)C)C2C(C)C.CC(C)C1C2C=CC(C1C(C)C)C(C(C)(C)C)C2C(C)C.CC(C)C1C2CC(C(C)C)C(C(C)C)(C2)C1C(C)C.CC(C)C1C2CC(C1C(C)C)C(C(C)C)C2C(C)C.CC(C)C1C2CCC(C(C)C)(C(C(C)C)C2)C1C(C)C.CC(C)C1C2CCC(C1C(C)(C)C)C(C(C)(C)C)C2C(C)(C)C.CC(C)C1CC2C=CC1(C(C)C)C(C(C)(C)C)C2C(C)(C)C KIDLTTWCGOLNPF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- NLWBEORDOPDUPM-UHFFFAOYSA-N O=C1OC(=O)C2C1CC1C(=O)OC(=O)C12 Chemical compound O=C1OC(=O)C2C1CC1C(=O)OC(=O)C12 NLWBEORDOPDUPM-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229920001109 fluorescent polymer Polymers 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/1064—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Definitions
- the invention relates to a polymer, and in particular to a polyimide polymer for flexible electrical device substrate material and a flexible electrical device comprising the polymer.
- a conventional polyimide plastic substrate with high thermal resistance can be directly coated on a glass and can endure processing temperatures exceeding 200° C., and thus achieves dimensional stability.
- such polyimide substrate is yellow.
- One embodiment of the invention provides a polyimide polymer for flexible electrical device substrate material, of Formula (I):
- B is a polycyclic aliphatic group
- A is an aromatic group containing at least one ether bond
- A′ is an aromatic or aliphatic group
- One embodiment of the invention provides a flexible electrical device comprising a first substrate, a second substrate opposed to the first substrate, wherein one of the first and second substrates comprises a polyimide polymer of Formula (I), and a medium layer disposed between the first substrate and the second substrate.
- B is a polycyclic aliphatic group
- A is an aromatic group containing at least one ether bond
- A′ is an aromatic or aliphatic group
- the invention provides a soluble polyimide polymer (film) which is colorless, has high transparency, high thermal resistance, is high flexibility and is suitable for application in flexible flat panel display fabrication using existing equipment.
- Polycyclic aliphatic dianhydride, aromatic diamine and diamine containing ether bonds are copolymerized under a high temperature with a specific ratio to form a soluble polyimide solution.
- the polyimide solution is then coated on a glass substrate to form a film.
- the tensile film possesses highly chemically resistant and endures the TFT plating and etching processes during flexible flat panel display fabrication. It is also highly thermally resistant (Tg>300° C.) and it has a high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- One embodiment of the invention provides a polyimide polymer for flexible electrical device substrate material, of Formula (I):
- B may be a polycyclic aliphatic group, for example:
- A may be an aromatic group containing at least one ether bond, for example:
- A′ may be an aromatic or aliphatic group, for example:
- One embodiment of the invention provides a flexible electrical device comprising a first substrate, a second substrate and a medium layer.
- the first substrate is opposed to the second substrate.
- One of the first and second substrates comprises a polyimide polymer of Formula (I).
- the medium layer is disposed between the first substrate and the second substrate.
- B may be a polycyclic aliphatic group, for example:
- A may be an aromatic group containing at least one ether bond, for example:
- A′ may be an aromatic or aliphatic group, for example:
- the medium layer may comprise liquid crystal, microcapsule electrophoresis or a polymer, for example; nematic liquid crystal, smectic liquid crystal, cholesteric liquid crystal, E-ink, fluorescent small molecule or fluorescent polymer.
- the disclosed flexible electrical device may comprise a particle display, liquid crystal display or micro electro mechanical system (MEMS) display.
- the particle display may comprise an electrochromic display (ECD) or electro-phoretic display (EPD).
- ECD electrochromic display
- EPD electro-phoretic display
- the liquid crystal display may comprise cholesteric liquid crystal display (ChLCD) or a bistable twisted-nematic (TN) liquid crystal display.
- the disclosed flexible electrical device may further comprise a solar cell.
- the invention provides a soluble polyimide polymer (film) which is colorless, highly transparent, has a high thermal resistance and is highly flexible, and is suitable for application for flexible flat panel display fabrication using existing equipment.
- Polycyclic aliphatic dianhydride, aromatic diamine and diamine containing ether bonds are copolymerized under high temperature with a specific ratio to form a soluble polyimide solution.
- the polyimide solution is then coated on a glass substrate to form a film.
- the tensile film possesses high chemical resistance and endures the TFT plating and etching processes of flexible flat panel display fabrication, with high thermal resistance (Tg>300° C.) and high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- the disclosed polyimide polymer possesses high thermal resistance and a low coefficient of thermal expansion (CTE).
- the polycyclic aliphatic dianhydride improves the solubility of the polymer solution.
- the aromatic diamine or diamine containing ether bond improves chemical resistance.
- the aromatic diamine for example
- polyimide solution is then coated on a glass substrate to form a film.
- the film possesses high transparency, is colorless, is highly thermally resistant, (Tg>300° C.), high flexibility and has a high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- the polyimide is synthesized by polycondensation, which is disclosed as follows.
- One method is that diamine monomer and dianhydride monomer are reacted in a polar solvent to form a poly (amic acid) (PAA) (precursor of polyimide). PAA is then thermally imidized (300 to 400° C.) or chemically imidized to dehydrate to form polyimide.
- PAA is then thermally imidized (300 to 400° C.) or chemically imidized to dehydrate to form polyimide.
- the other method involves reacting a diamine monomer and dianhydride monomer in a phenolic solvent (for example m-cresol or Cl-phenol). After heating to reflux temperature, the polyimide is then prepared.
- a phenolic solvent for example m-cresol or Cl-phenol
- PAA poly(amic acid)
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- Table 1 shows the solubility of the polyimide with various compositions and the test results of the chemical resistance of the polyimide to the solvent utilized in TFT processes (test condition: 50° C./1 hour).
- PAA poly(amic acid)
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- Table 2 shows the solubility of the polyimide with various compositions and the test results of the chemical resistance of the polyimide to solvents utilized in TFT processes (test condition: 50° C./1 hour).
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- PAA poly(amic acid)
- the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- Table 3 shows the solubility of the polyimide and the test results of the chemical resistance of the polyimide to solvent utilized in TFT processes (test condition: 50° C./1 hour).
Abstract
A polyimide polymer of Formula (I) for flexible electrical device substrate material is provided.
In Formula (I), B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4. The invention also provides a flexible electrical device including the polyimide polymer.
Description
- This application claims priority of Taiwan Patent Application No. 98146298, filed on Dec. 31, 2009, the entirety of which is incorporated by reference herein.
- 1. Field of the Invention
- The invention relates to a polymer, and in particular to a polyimide polymer for flexible electrical device substrate material and a flexible electrical device comprising the polymer.
- 2. Description of the Related Art
- The applications of flexible displays have been valued. This technology is actively researched by various large global companies and the development of flexible display technology has progressively matured. The development of active flexible displays which can substitute for passive displays has become the focus of the technology. Development of a flexible display that is light, portable, rigid and flexible has become the new trend in next-generation displays. In the development of an active flexible display, providing a transparent substrate with high thermal resistance which is capable of enduring the TFT processes plays an important role.
- While a transparent substrate material is applied in flexible flat panel display fabrication, it must be capable of enduring the TFT processes. For example, TFT processes may include high-temperature processes (>200° C.), a washing processes and chemical erosion from etching and a development processes. Thus, performing chemical structure modifications or specific processes on present flexible transparent plastic film material with high glass transition temperature (Tg) to achieve high thermal resistance (300° C.) and dimensional stability is desirable. Additionally, while the plastic material is coated on a glass substrate to form a film, forming a tensile film possessing high chemical resistance capable of enduring the TFT plating and etching processes of the flexible flat panel display fabrication is required. Development of such flexible plastic film material with the aforesaid characteristics is desirable.
- A conventional polyimide plastic substrate with high thermal resistance can be directly coated on a glass and can endure processing temperatures exceeding 200° C., and thus achieves dimensional stability. However, such polyimide substrate is yellow.
- One embodiment of the invention provides a polyimide polymer for flexible electrical device substrate material, of Formula (I):
- In Formula (I), B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4.
- One embodiment of the invention provides a flexible electrical device comprising a first substrate, a second substrate opposed to the first substrate, wherein one of the first and second substrates comprises a polyimide polymer of Formula (I), and a medium layer disposed between the first substrate and the second substrate.
- In Formula (I), B is a polycyclic aliphatic group, A is an aromatic group containing at least one ether bond, A′ is an aromatic or aliphatic group, and 1≦n/m≦4.
- The invention provides a soluble polyimide polymer (film) which is colorless, has high transparency, high thermal resistance, is high flexibility and is suitable for application in flexible flat panel display fabrication using existing equipment. Polycyclic aliphatic dianhydride, aromatic diamine and diamine containing ether bonds are copolymerized under a high temperature with a specific ratio to form a soluble polyimide solution. The polyimide solution is then coated on a glass substrate to form a film. The tensile film possesses highly chemically resistant and endures the TFT plating and etching processes during flexible flat panel display fabrication. It is also highly thermally resistant (Tg>300° C.) and it has a high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- A detailed description is given in the following embodiments.
- The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
- One embodiment of the invention provides a polyimide polymer for flexible electrical device substrate material, of Formula (I):
- In Formula (I), B may be a polycyclic aliphatic group, for example:
- A may be an aromatic group containing at least one ether bond, for example:
- A′ may be an aromatic or aliphatic group, for example:
- One embodiment of the invention provides a flexible electrical device comprising a first substrate, a second substrate and a medium layer. The first substrate is opposed to the second substrate. One of the first and second substrates comprises a polyimide polymer of Formula (I). The medium layer is disposed between the first substrate and the second substrate.
- In Formula (I), B may be a polycyclic aliphatic group, for example:
- A may be an aromatic group containing at least one ether bond, for example:
- A′ may be an aromatic or aliphatic group, for example:
- The medium layer may comprise liquid crystal, microcapsule electrophoresis or a polymer, for example; nematic liquid crystal, smectic liquid crystal, cholesteric liquid crystal, E-ink, fluorescent small molecule or fluorescent polymer.
- The disclosed flexible electrical device may comprise a particle display, liquid crystal display or micro electro mechanical system (MEMS) display. The particle display may comprise an electrochromic display (ECD) or electro-phoretic display (EPD). The liquid crystal display may comprise cholesteric liquid crystal display (ChLCD) or a bistable twisted-nematic (TN) liquid crystal display.
- The disclosed flexible electrical device may further comprise a solar cell.
- The invention provides a soluble polyimide polymer (film) which is colorless, highly transparent, has a high thermal resistance and is highly flexible, and is suitable for application for flexible flat panel display fabrication using existing equipment. Polycyclic aliphatic dianhydride, aromatic diamine and diamine containing ether bonds are copolymerized under high temperature with a specific ratio to form a soluble polyimide solution. The polyimide solution is then coated on a glass substrate to form a film. The tensile film possesses high chemical resistance and endures the TFT plating and etching processes of flexible flat panel display fabrication, with high thermal resistance (Tg>300° C.) and high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- The disclosed polyimide polymer possesses high thermal resistance and a low coefficient of thermal expansion (CTE). The polycyclic aliphatic dianhydride improves the solubility of the polymer solution. The aromatic diamine or diamine containing ether bond improves chemical resistance. The aromatic diamine (for example
- diamine containing ether bond (for example
- and polycyclic aliphatic dianhydride are copolymerized with a specific ratio to form a soluble polyimide solution. The polyimide solution is then coated on a glass substrate to form a film. The film possesses high transparency, is colorless, is highly thermally resistant, (Tg>300° C.), high flexibility and has a high chemical resistance (capable of resisting photoresist, oxalic acid, developer and stripper).
- The polyimide is synthesized by polycondensation, which is disclosed as follows. One method is that diamine monomer and dianhydride monomer are reacted in a polar solvent to form a poly (amic acid) (PAA) (precursor of polyimide). PAA is then thermally imidized (300 to 400° C.) or chemically imidized to dehydrate to form polyimide. The other method involves reacting a diamine monomer and dianhydride monomer in a phenolic solvent (for example m-cresol or Cl-phenol). After heating to reflux temperature, the polyimide is then prepared.
- 0.0103 mole of
- and 0.0044 mole of
- were
- completely dissolved in 38.29 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- 0.0074 mole of
- and 0.0074 mole of
- were completely dissolved in 46.62 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0044 mole of
- and 0.0103 mole of
- were completely dissolved in 35.08 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0029 mole of
- and 0.0118 mole of
- were completely dissolved in 37.05 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0015 mole of
- and 0.0132 mole of
- were completely dissolved in 38.79 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
-
TABLE 1 Solvent utilized in TFT processes Compositions Photo- Oxalic Example B1317 BAPB BAPPm solubility resist acid Developer Stripper 1 1 0.3 0.7 X — — — — 2 1 0.5 0.5 ◯ ◯ ◯ ◯ ◯ 3 1 0.7 0.3 ◯ ◯ ◯ ◯ ◯ 4 1 0.8 0.2 ◯ ◯ ◯ ◯ ◯ 5 1 0.9 0.1 X — — — — - The disclosed polyimide synthesized by diamine (BAPB and BAPPm with various ratios) and polycyclic aliphatic dianhydride (B1317) prepared from Examples 1 to 5 was further coated on a glass to form a polyimide film. Table 1 shows the solubility of the polyimide with various compositions and the test results of the chemical resistance of the polyimide to the solvent utilized in TFT processes (test condition: 50° C./1 hour).
- 0.0103 mole of
- and 0.0044 mole of
- were completely dissolved in 35.29 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
- 0.0074 mole of
- and 0.0074 mole of
- were completely dissolved in 32.97 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0044 mole of
- and 0.0103 mole of
- were completely dissolved in 30.38 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317
dianhydride - was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0029 mole of
- and 0.0118 mole of
- were completely dissolved in 29.11 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0015 mole of
- and 0.0132 mole of
- were completely dissolved in 27.93 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of B1317 dianhydride
- was then added to the flask. After B1317 was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes.
-
TABLE 2 Solvent utilized in TFT processes Compositions Photo- Oxalic Example B1317 ODA BAPPm solubility resist acid Developer Stripper 6 1 0.3 0.7 X — — — — 7 1 0.5 0.5 ◯ ◯ ◯ ◯ ◯ 8 1 0.7 0.3 ◯ ◯ ◯ ◯ ◯ 9 1 0.8 0.2 ◯ ◯ ◯ ◯ ◯ 10 1 0.9 0.1 X — — — — - The disclosed polyimide synthesized by diamine (ODA and BAPPm with various ratios) and polycyclic aliphatic dianhydride (B1317) prepared from Examples 6 to 10 was further coated on a glass to form a polyimide film. Table 2 shows the solubility of the polyimide with various compositions and the test results of the chemical resistance of the polyimide to solvents utilized in TFT processes (test condition: 50° C./1 hour).
- 0.0044 mole of
- and 0.0103 mole of
- were completely dissolved in 35.03 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of 5-ring dianhydride
- was then added to the flask. After 5-ring was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
- 0.0044 mole of
- and 0.0103 mole of
- were completely dissolved in 49.04 g of m-cresol in a three-necked flask under nitrogen at room temperature. 0.0150 mole of 6FDA dianhydride
- was then added to the flask. After 6FDA was completely dissolved, the resulting solution was continuously stirred for 1 hour to form a sticky poly(amic acid) (PAA) solution. Next, the PAA solution was heated to 220° C. to react for 3 hours. Water was simultaneously removed using a water remover during the aforesaid processes. Next, the reaction solution was dropped into methanol to precipitate silk polyimide. The polyimide was then baked in a vacuum oven for 12 hours. The silk polyimide was then dissolved in DMAc, with a solid content of 15%.
-
TABLE 3 Solvent utilized in TFT processes Compositions Oxalic No. Dianhydride Diamine solubility Photoresist acid Developer Stripper 1 5-ring BAPB BAPPm ◯ X ◯ ◯ X (0.7) (0.3) 2 6FDA BAPB BAPPm ◯ X X ◯ ◯ (0.7) (0.3) - The polyimide synthesized by polycyclic aliphatic dianhydride (5-ring and 6FDA) and diamine (BAPB (0.7) and BAPPm (0.3)) prepared from Comparative Examples 1 and 2 was further coated on a glass to form a polyimide film. Table 3 shows the solubility of the polyimide and the test results of the chemical resistance of the polyimide to solvent utilized in TFT processes (test condition: 50° C./1 hour).
- While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (10)
5. A flexible electrical device, comprising:
a first substrate;
a second substrate opposed to the first substrate, wherein one of the first and second substrates comprises a polyimide polymer as claimed in claim 1 ; and
a medium layer disposed between the first substrate and the second substrate.
6. The flexible electrical device as claimed in claim 5 , wherein the medium layer comprises liquid crystal or polymer.
7. The flexible electrical device as claimed in claim 5 , wherein the flexible electrical device comprises a particle display, liquid crystal display or micro electro mechanical system (MEMS) display.
8. The flexible electrical device as claimed in claim 7 , wherein the particle display comprises a electrochromic display (ECD) or electro-phoretic display (EPD).
9. The flexible electrical device as claimed in claim 7 , wherein the liquid crystal display comprises cholesteric liquid crystal display (ChLCD) or bistable twisted-nematic (TN) liquid crystal display.
10. The flexible electrical device as claimed in claim 5 , wherein the flexible electrical device comprises a solar cell.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/912,172 US9209403B2 (en) | 2009-12-31 | 2013-06-06 | Method for fabricating flexible electrical devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW98146298A TWI362398B (en) | 2009-12-31 | 2009-12-31 | Polyimide polymers for flexible electrical device substrate material and flexible electrical devices comprising the same |
TW098146298 | 2009-12-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/912,172 Continuation US9209403B2 (en) | 2009-12-31 | 2013-06-06 | Method for fabricating flexible electrical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110155235A1 true US20110155235A1 (en) | 2011-06-30 |
Family
ID=44185982
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/824,220 Abandoned US20110155235A1 (en) | 2009-12-31 | 2010-06-27 | Polyimide polymers for flexible electrical device substrate materials and flexible electrical devices comprising the same |
US13/912,172 Active 2030-08-30 US9209403B2 (en) | 2009-12-31 | 2013-06-06 | Method for fabricating flexible electrical devices |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/912,172 Active 2030-08-30 US9209403B2 (en) | 2009-12-31 | 2013-06-06 | Method for fabricating flexible electrical devices |
Country Status (2)
Country | Link |
---|---|
US (2) | US20110155235A1 (en) |
TW (1) | TWI362398B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130172513A1 (en) * | 2011-12-30 | 2013-07-04 | Industrial Technology Research Institute | Polyimides |
US8907328B2 (en) | 2012-12-18 | 2014-12-09 | Industrial Technology Research Institute | Organic light emitting diode having polymide-containing flexible substrate and having surface with bulge and groove structure |
US20160115277A1 (en) * | 2014-10-28 | 2016-04-28 | Taiflex Scientific Co., Ltd. | Polyimide polymer, polyimide film, and flexible copper-coated laminate |
US20180230270A1 (en) * | 2017-02-15 | 2018-08-16 | Microcosm Technology Co. Ltd. | Polyimide resin, thin film and method for manufacturing thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI609953B (en) * | 2016-12-30 | 2018-01-01 | 財團法人工業技術研究院 | Electrochromic composition and electrochromic element |
Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161492A (en) * | 1975-01-24 | 1979-07-17 | Bayer Aktiengesellschaft | Cycloaliphatic amines and process for preparing same |
US4196144A (en) * | 1976-06-15 | 1980-04-01 | Ciba-Geigy Corporation | Aromatic diamines and their use as polycondensation components for the manufacture of polyamide, polyamide-imide and polyimide polymers |
US4506100A (en) * | 1981-08-12 | 1985-03-19 | National Starch And Chemical Corporation | Aromatic diamines |
US4847311A (en) * | 1986-04-09 | 1989-07-11 | Mitsui Toatsu Chemicals, Inc. | Polyimide resin composition |
US5288843A (en) * | 1987-05-20 | 1994-02-22 | Mitsui Toatsu Chemicals, Inc. | Polyimides, process for the preparation thereof and polyimide resin compositions |
US5300364A (en) * | 1990-09-04 | 1994-04-05 | Chisso Corporation | Metal-clad laminates and method for producing same |
US5580918A (en) * | 1992-04-22 | 1996-12-03 | Mitsui Toatsu Chemicals, Inc. | Polyimide resin composition |
US5856432A (en) * | 1995-11-01 | 1999-01-05 | E. I. Dupont De Nemours And Company | Polyimide film from pyromellitic dianhydride and a bis (4-aminophenoxy) aromatic compound as an alignment layer for liquid crystal displays |
US20020006480A1 (en) * | 2000-06-30 | 2002-01-17 | Minolta Co., Ltd. | Liquid crystal display element |
US20020120090A1 (en) * | 2001-02-20 | 2002-08-29 | Industrial Technology Research Institute | Cycloaliphatic polyimide, a method for producing the same, and its use |
US20030092870A1 (en) * | 2001-09-04 | 2003-05-15 | Mitsui Chemicals, Inc. | Novel aromatic diamine and polyimide thereof |
US6788449B2 (en) * | 2000-03-03 | 2004-09-07 | Sipix Imaging, Inc. | Electrophoretic display and novel process for its manufacture |
US20040265609A1 (en) * | 2003-05-06 | 2004-12-30 | Shuta Kihara | Metal-clad laminate |
US6962756B2 (en) * | 2001-11-02 | 2005-11-08 | Mitsubishi Gas Chemical Company, Inc. | Transparent electrically-conductive film and its use |
US20060052476A1 (en) * | 2004-09-09 | 2006-03-09 | Shin-Etsu Chemical Co., Ltd. | Solvent-free polymide silicone resin composition and a cured resin film thereof |
US20060063908A1 (en) * | 2002-12-27 | 2006-03-23 | Koji Moriuchi | Polyimide precursor liquid composition and polyimide coating film |
US20060099506A1 (en) * | 2004-11-08 | 2006-05-11 | 3M Innovative Properties Company | Polyimide electrode binders |
US20060134443A1 (en) * | 2003-06-25 | 2006-06-22 | Shin-Etsu Chemical Co., Ltd. | Flexible metal foil-polyimide laminate |
US20070065603A1 (en) * | 2005-09-22 | 2007-03-22 | Industrial Technology Research Institute | Liquid crystal display device |
US20070087134A1 (en) * | 2005-10-19 | 2007-04-19 | Industrial Technology Research Institute | Liquid crystal display |
US20070116899A1 (en) * | 2005-11-22 | 2007-05-24 | Industrial Technology Research Institute | Liquid crystal display |
US20080113120A1 (en) * | 2006-11-13 | 2008-05-15 | Industrial Technology Research Institute | Transparent Substrate with Optical Compensation Ability and Liquid Crystal Display Using the Same |
US20080161473A1 (en) * | 2006-12-29 | 2008-07-03 | Industrial Technology Research Institute | Hybrid composition and films fabricated by the same |
US20080286498A1 (en) * | 2007-05-14 | 2008-11-20 | Industrial Technology Research Institute | Transparent substrate with low birefringence |
US7466390B2 (en) * | 2003-11-21 | 2008-12-16 | Koninklijke Philips Electronics N.V. | Active matrix displays and other electronic devices having plastic substrates |
US20090056981A1 (en) * | 2005-04-18 | 2009-03-05 | Toyo Boseki Kabushiki Kaisha | Thin film-laminated polyimide film and flexible printed wiring board |
US20090068482A1 (en) * | 2005-01-21 | 2009-03-12 | Tsuyoshi Bito | Polyimide resin, polyimide film, and polyimide laminate |
US20090137770A1 (en) * | 2007-11-27 | 2009-05-28 | Industrial Technology Research Institute | Polymide optical compensation films |
US20090269597A1 (en) * | 2006-07-18 | 2009-10-29 | Tsuyoshi Bito | Polyimide resin |
US20090305046A1 (en) * | 2006-07-20 | 2009-12-10 | Tsuyoshi Bito | Thermocurable Polyimide Resin Composition |
US20100068483A1 (en) * | 2008-09-15 | 2010-03-18 | Industrial Technology Research Institute | Substrate structures applied in flexible electrical devices and fabrication method thereof |
US20100167031A1 (en) * | 2008-12-30 | 2010-07-01 | Industrial Technology Research Institute | Substrate structures applied in flexible electrical devices and fabrication method thereof |
US7851124B2 (en) * | 2003-06-03 | 2010-12-14 | Mitsui Chemicals, Inc. | Composition for forming wiring protective film and uses thereof |
US20110059305A1 (en) * | 2008-02-25 | 2011-03-10 | Hitachi Chemical Dupont Microsystems, Ltd. | Polyimide precursor composition, polyimide film, and transparent flexible film |
US20110130507A1 (en) * | 2009-11-27 | 2011-06-02 | Industrial Technology Research Institute | Organic/inorganic hybrid material and fabrication method thereof |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4525903B2 (en) | 2004-05-26 | 2010-08-18 | 三菱瓦斯化学株式会社 | Color filter substrate |
-
2009
- 2009-12-31 TW TW98146298A patent/TWI362398B/en active
-
2010
- 2010-06-27 US US12/824,220 patent/US20110155235A1/en not_active Abandoned
-
2013
- 2013-06-06 US US13/912,172 patent/US9209403B2/en active Active
Patent Citations (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161492A (en) * | 1975-01-24 | 1979-07-17 | Bayer Aktiengesellschaft | Cycloaliphatic amines and process for preparing same |
US4196144A (en) * | 1976-06-15 | 1980-04-01 | Ciba-Geigy Corporation | Aromatic diamines and their use as polycondensation components for the manufacture of polyamide, polyamide-imide and polyimide polymers |
US4506100A (en) * | 1981-08-12 | 1985-03-19 | National Starch And Chemical Corporation | Aromatic diamines |
US4847311A (en) * | 1986-04-09 | 1989-07-11 | Mitsui Toatsu Chemicals, Inc. | Polyimide resin composition |
US5288843A (en) * | 1987-05-20 | 1994-02-22 | Mitsui Toatsu Chemicals, Inc. | Polyimides, process for the preparation thereof and polyimide resin compositions |
US5300364A (en) * | 1990-09-04 | 1994-04-05 | Chisso Corporation | Metal-clad laminates and method for producing same |
US5580918A (en) * | 1992-04-22 | 1996-12-03 | Mitsui Toatsu Chemicals, Inc. | Polyimide resin composition |
US5856432A (en) * | 1995-11-01 | 1999-01-05 | E. I. Dupont De Nemours And Company | Polyimide film from pyromellitic dianhydride and a bis (4-aminophenoxy) aromatic compound as an alignment layer for liquid crystal displays |
US6788449B2 (en) * | 2000-03-03 | 2004-09-07 | Sipix Imaging, Inc. | Electrophoretic display and novel process for its manufacture |
US20020006480A1 (en) * | 2000-06-30 | 2002-01-17 | Minolta Co., Ltd. | Liquid crystal display element |
US20020120090A1 (en) * | 2001-02-20 | 2002-08-29 | Industrial Technology Research Institute | Cycloaliphatic polyimide, a method for producing the same, and its use |
US6498226B2 (en) * | 2001-02-20 | 2002-12-24 | Industrial Technology Research Institute | Cycloaliphatic polyimide, a method for producing the same, and its use |
US20040082754A1 (en) * | 2001-09-04 | 2004-04-29 | Mitsui Chemicals, Inc. | Novel aromatic diamine and polyimide thereof |
US20030092870A1 (en) * | 2001-09-04 | 2003-05-15 | Mitsui Chemicals, Inc. | Novel aromatic diamine and polyimide thereof |
US6962756B2 (en) * | 2001-11-02 | 2005-11-08 | Mitsubishi Gas Chemical Company, Inc. | Transparent electrically-conductive film and its use |
US20060063908A1 (en) * | 2002-12-27 | 2006-03-23 | Koji Moriuchi | Polyimide precursor liquid composition and polyimide coating film |
US20040265609A1 (en) * | 2003-05-06 | 2004-12-30 | Shuta Kihara | Metal-clad laminate |
US7851124B2 (en) * | 2003-06-03 | 2010-12-14 | Mitsui Chemicals, Inc. | Composition for forming wiring protective film and uses thereof |
US20060134443A1 (en) * | 2003-06-25 | 2006-06-22 | Shin-Etsu Chemical Co., Ltd. | Flexible metal foil-polyimide laminate |
US7466390B2 (en) * | 2003-11-21 | 2008-12-16 | Koninklijke Philips Electronics N.V. | Active matrix displays and other electronic devices having plastic substrates |
US20060052476A1 (en) * | 2004-09-09 | 2006-03-09 | Shin-Etsu Chemical Co., Ltd. | Solvent-free polymide silicone resin composition and a cured resin film thereof |
US20060099506A1 (en) * | 2004-11-08 | 2006-05-11 | 3M Innovative Properties Company | Polyimide electrode binders |
US20090068482A1 (en) * | 2005-01-21 | 2009-03-12 | Tsuyoshi Bito | Polyimide resin, polyimide film, and polyimide laminate |
US20090056981A1 (en) * | 2005-04-18 | 2009-03-05 | Toyo Boseki Kabushiki Kaisha | Thin film-laminated polyimide film and flexible printed wiring board |
US20070065603A1 (en) * | 2005-09-22 | 2007-03-22 | Industrial Technology Research Institute | Liquid crystal display device |
US7727600B2 (en) * | 2005-09-22 | 2010-06-01 | Industrial Technology Research Institute | Liquid crystal display device |
US20100136263A1 (en) * | 2005-09-22 | 2010-06-03 | Chyi-Ming Leu | Liquid crystal display device |
US20090136689A1 (en) * | 2005-09-22 | 2009-05-28 | Chyi-Ming Leu | Liquid crystal display device |
US7504138B2 (en) * | 2005-09-22 | 2009-03-17 | Industrial Technology Research Institute | Liquid crystal display device |
US7651744B2 (en) * | 2005-10-19 | 2010-01-26 | Industrial Technology Research Institute | Liquid crystal display |
US20070087134A1 (en) * | 2005-10-19 | 2007-04-19 | Industrial Technology Research Institute | Liquid crystal display |
US7662449B2 (en) * | 2005-11-22 | 2010-02-16 | Industrial Technology Research Institute | Liquid crystal display |
US20070116899A1 (en) * | 2005-11-22 | 2007-05-24 | Industrial Technology Research Institute | Liquid crystal display |
US20090269597A1 (en) * | 2006-07-18 | 2009-10-29 | Tsuyoshi Bito | Polyimide resin |
US20090305046A1 (en) * | 2006-07-20 | 2009-12-10 | Tsuyoshi Bito | Thermocurable Polyimide Resin Composition |
US20080113120A1 (en) * | 2006-11-13 | 2008-05-15 | Industrial Technology Research Institute | Transparent Substrate with Optical Compensation Ability and Liquid Crystal Display Using the Same |
US20080161473A1 (en) * | 2006-12-29 | 2008-07-03 | Industrial Technology Research Institute | Hybrid composition and films fabricated by the same |
US20080286498A1 (en) * | 2007-05-14 | 2008-11-20 | Industrial Technology Research Institute | Transparent substrate with low birefringence |
US20090137770A1 (en) * | 2007-11-27 | 2009-05-28 | Industrial Technology Research Institute | Polymide optical compensation films |
US20110059305A1 (en) * | 2008-02-25 | 2011-03-10 | Hitachi Chemical Dupont Microsystems, Ltd. | Polyimide precursor composition, polyimide film, and transparent flexible film |
US20100068483A1 (en) * | 2008-09-15 | 2010-03-18 | Industrial Technology Research Institute | Substrate structures applied in flexible electrical devices and fabrication method thereof |
US20100167031A1 (en) * | 2008-12-30 | 2010-07-01 | Industrial Technology Research Institute | Substrate structures applied in flexible electrical devices and fabrication method thereof |
US20110130507A1 (en) * | 2009-11-27 | 2011-06-02 | Industrial Technology Research Institute | Organic/inorganic hybrid material and fabrication method thereof |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130172513A1 (en) * | 2011-12-30 | 2013-07-04 | Industrial Technology Research Institute | Polyimides |
US8883956B2 (en) * | 2011-12-30 | 2014-11-11 | Industrial Technology Research Institute | Polyimides |
US8907328B2 (en) | 2012-12-18 | 2014-12-09 | Industrial Technology Research Institute | Organic light emitting diode having polymide-containing flexible substrate and having surface with bulge and groove structure |
US20160115277A1 (en) * | 2014-10-28 | 2016-04-28 | Taiflex Scientific Co., Ltd. | Polyimide polymer, polyimide film, and flexible copper-coated laminate |
US9505887B2 (en) * | 2014-10-28 | 2016-11-29 | Taiflex Scientific Co., Ltd. | Polyimide polymer, polyimide film, and flexible copper-coated laminate |
US9955572B2 (en) * | 2014-10-28 | 2018-04-24 | Taiflex Scientific Co., Ltd. | Polyimide polymer, polyimide film, and flexible copper-coated laminate |
US20180230270A1 (en) * | 2017-02-15 | 2018-08-16 | Microcosm Technology Co. Ltd. | Polyimide resin, thin film and method for manufacturing thereof |
US10538626B2 (en) * | 2017-02-15 | 2020-01-21 | Microcosm Technology Co., Ltd | Polyimide resin, thin film and method for manufacturing thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201122025A (en) | 2011-07-01 |
US9209403B2 (en) | 2015-12-08 |
US20130267061A1 (en) | 2013-10-10 |
TWI362398B (en) | 2012-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI282560B (en) | Transparent electrically-conductive film and its use | |
US9209403B2 (en) | Method for fabricating flexible electrical devices | |
US11040522B2 (en) | Polyimide cover substrate | |
KR101968258B1 (en) | Poly(amide-imide) block copolymer, article including same, and display device including the article | |
US20080161473A1 (en) | Hybrid composition and films fabricated by the same | |
US20140072813A1 (en) | Polyamide-imide solution and polyamide-imide film | |
JP6891084B2 (en) | Highly transparent polyimide | |
US7438957B2 (en) | Poly(aryletherimides) for negative birefringent films for LCDs | |
KR20130029129A (en) | Poly(amide-imide) block copolymer, article including same, and display device including the article | |
US20120160317A1 (en) | Polyimide polymer solution, polyimide polymer, transparent film, displaying device and solar cell | |
US20120296037A1 (en) | Polyamide block copolymer, article including same, and display device including the article | |
JP5909391B2 (en) | Polyimide solution and polyimide film obtained from the solution | |
TW200418761A (en) | Novel diaminobenzene derivative, polyimide precursor and polyimide obtained therefrom, and aligning agent for liquid crystal | |
US8318969B2 (en) | Alignment material for liquid crystal display device of vertical alignment mode and method of preparing the same | |
US20200223983A1 (en) | Poly(imide-amide) copolymer, a method for preparing a poly(imide-amide) copolymer, and an article including a poly(imide-amide) copolymer | |
US20200102423A1 (en) | Poly(amic acid), poly(amic acid) solution, polyimide, polyimide film, layered product, flexible device, and production method for polyimide film | |
JP2021101002A (en) | Polyimide film and production method thereof | |
US10351670B2 (en) | Aromatic polyketone, method of producing the same, aromatic polyketone composition, aromatic polyketone film, optical element, and image display apparatus | |
KR20220016917A (en) | Polyimide resin and manufacturing method thereof, and polyimide film and manufacturing method thereof | |
JP2012224755A (en) | Highly transparent polyimide precursor and resin composition using the same, polyimide molded article and method for producing the molding, plastic substrate, protective film, and electronic component and display device having the film | |
KR20180093655A (en) | Polyimide film, composition for preparing polyimede film, display device including polyimide film polyamide film, and indentation hardness estimating method thereof | |
JP2012184281A (en) | Resin composition | |
US8545947B2 (en) | Transparent substrate with optical compensation ability and liquid crystal display using the same | |
US20220325045A1 (en) | Polymers for use in electronic devices | |
JP2013079344A (en) | Polyimide precursor, composition containing polyimide precursor, and transparent polyimide molding obtained from the composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |