US20090267107A1 - Optoelectronic Semiconductor Component - Google Patents
Optoelectronic Semiconductor Component Download PDFInfo
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- US20090267107A1 US20090267107A1 US12/478,517 US47851709A US2009267107A1 US 20090267107 A1 US20090267107 A1 US 20090267107A1 US 47851709 A US47851709 A US 47851709A US 2009267107 A1 US2009267107 A1 US 2009267107A1
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- encapsulation
- covering layer
- basic body
- component according
- optoelectronic component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Definitions
- the invention relates to an optoelectronic semiconductor component comprising a basic body, at least one semiconductor chip arranged thereon, and an encapsulation embedding the at least one semiconductor chip and composed of a radiation-transmissive material with scattering particles.
- Optoelectronic semiconductor components are used, for example, in an area of display technology where a homogeneously illuminated and high-contrast image is important.
- a production method for conventional optoelectronic semiconductor components of the type mentioned involves firstly injection-molding a suitable plastic material around a prefabricated leadframe, the material forming a basic body for the housing of the device.
- the basic body has a cutout at the top side, connections of the leadframe being led into the cutout from two opposite sides.
- the semiconductor chip for example, an LED chip or a laser diode, is adhesively bonded and electrically contact-connected.
- a generally radiation-transmissive potting compound is then filled into the cutout and embeds the semiconductor body.
- the light sources used are optoelectronic semiconductor components whose basic bodies are entirely diffusely reflective, that is to say they appear white, or basic bodies whose edge region is printed dark, and the rest of the basic body remains white.
- a dark embodiment of the basic body of the semiconductor components results in the generation of a high-contrast image.
- the contrast can be reduced by incidence of extraneous light, since the extraneous light is reflected at the emission area of the semiconductor component and the chip surface. By way of example, the contrast decreases as the brightness of the ambient light increases and the displayed image appears bleached out.
- the emission area is diffusely reflective.
- the contrast and the homogeneity of the image can be optimized further by the use of screen devices and/or diffuser plates disposed upstream of the optoelectronic semiconductor components. However, these devices also lead to a loss of light, such that the light emitted by the semiconductor chip must have a higher brightness.
- the invention specifies an optoelectronic semiconductor component, such that the light emitted by the semiconductor chip appears as a homogeneous luminous area and the semiconductor component enables a high-contrast image.
- an optoelectronic semiconductor component of the type mentioned in the introduction can be characterized in that a radiation-transmissive covering layer with an absorber is applied to the encapsulation.
- the optoelectronic semiconductor components according to the invention generate a homogeneously illuminated and high-contrast image on a video display, wherein the individual pixels appear homogeneously illuminated over the entire pixel area available to them, that is to say not as a small spot generated by the semiconductor chip.
- the edge regions or dimmed-down or switched-off regions of the image also appear black.
- a scattering particle density in the encapsulation has no influence on the absorption effect of the covering layer.
- the advantage is that the proportion of absorber in the covering layer, as the scattering particle density increases, does not have to be increased in order to obtain the same contrast. The absorption loss of the emitted light is therefore kept low.
- a further advantage is that in the case of an increased contrast, the brightness of the emitted light remains the same. That is to say that the requirements made of the brightness of the optoelectronic semiconductor component in the case of increased contrast are therefore reduced.
- contrast-enhancing elements disposed upstream of the semiconductor components can be obviated, for example a frame for screening against incident ambient light.
- the basic body is produced from a material which is at least partly absorbent for a radiation emitted by the semiconductor chip.
- the basic body is produced, for example, from a dark or black plastic. This results in a good contrast between the emission area of the component and the rest of the device area.
- FIG. 1 shows a schematic cross-sectional illustration of a first exemplary embodiment
- FIGS. 1A and 1B show other embodiments of the invention
- FIG. 2 shows a schematic cross-sectional illustration of a second exemplary embodiment
- FIG. 3 shows a schematic cross-sectional illustration of a third exemplary embodiment.
- FIGS. 1 to 3 show exemplary embodiments of an optoelectronic semiconductor component using surface mounting technology (SMT), wherein identical parts of the semiconductor component are identified by the same reference symbols in the figures.
- SMT surface mounting technology
- FIG. 1 shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with a first exemplary embodiment of the present invention.
- the basic body 1 for the semiconductor component is formed by injection-molding a suitable plastic material around a leadframe 2 to form a housing.
- the basic body 1 has a central cutout, in which a semiconductor chip 3 such as, for example, an optoelectronic transmitter or receiver is arranged and is electrically conductively connected to the electrical connections 2 A, 2 B of the leadframe 2 by means of bonding wire technology 4 .
- An inner area 10 of the cutout of the basic body 1 is embodied in oblique fashion and produced from a black plastic. This results in a good contrast between an emission area 11 of the component and the rest of the device area of the basic body 1 .
- a plastic material preferably a thermoplastic or thermosetting plastic, is used for the basic body 1 .
- the semiconductor chip 3 is embedded in a radiation-transmissive encapsulation 6 , which is produced from a potting compound with scattering particles.
- the filling level of the encapsulation 6 terminates below the surface of the basic body 1 .
- other filling levels of the encapsulation 6 in the cutout of the basic body 1 can also be chosen, of course, as necessary. Two of such exemplary embodiments are shown in FIGS. 1A and 1B .
- a covering layer 5 with absorber which is a radiation-transmissive potting compound with absorber, is applied over the radiation-transmissive encapsulation 6 with scattering particles.
- the filling level of the covering layer 5 terminates with the surface of the basic body 1 .
- the absorber in the covering layer 5 absorbs externally incident extraneous light and thus prevents a reduction of a contrast due to reflection of the extraneous light at the emission area 11 or the chip surface. It is also possible to adhesively bond the covering layer 5 as lamina onto the encapsulation 6 .
- an epoxy resin or silicone is used as material for the potting compound of the encapsulation 6 and the covering layer 5 .
- the scattering particles in the encapsulation 6 are an aluminum oxide, for example.
- Carbon black, for example, is used as an absorber in the covering layer 5 .
- FIG. 1A shows an exemplary embodiment wherein the filling level of the encapsulation 6 in the cutout of the basic body 1 terminates with a step 8 in the inner area 10 .
- the filling level of the covering layer 5 applied to the encapsulation 6 terminates with the surface of the basic body 1 .
- the horizontal extent of the covering layer 5 is greater than the horizontal area of the encapsulation 6 that terminates at the step.
- FIG. 1B shows an exemplary embodiment wherein the filling level of the encapsulation 6 in the cutout of the basic body 1 terminates with a wave 9 in the inner area 10 .
- the filling level of the covering layer 5 applied to the encapsulation 6 terminates with the surface of the basic body 1 .
- the horizontal extent of the covering layer is greater than the horizontal area of the encapsulation 6 that terminates at the wave 9 .
- the filling level begins in an edge region of the covering layer 5 below the encapsulation 6 .
- FIG. 2 shows in a second exemplary embodiment a schematic cross-sectional illustration of an optoelectronic semiconductor component whose basic body 1 is formed by a substrate 7 .
- the semiconductor chip 3 is arranged on the substrate 7 and embedded in a two-layered body, namely the encapsulation 6 with scattering particles and, applied thereto, the covering layer 5 with absorber.
- the two-layered body is cast or injection-molded onto the substrate 7 , the covering layer 5 being cast or injection-molded onto the encapsulation 6 .
- the encapsulation 6 and the covering layer 5 are produced from epoxy resin, silicone or silicone-epoxide hybrid.
- the substrate 7 is produced from ceramic or epoxy resin with glass fiber fabric, also known by the abbreviation FR4.
- the scattering particles in the encapsulation 6 are an aluminum oxide, for example. Carbon black, for example, is used as absorber in the covering layer 5 .
- the covering layer 5 It is possible to adhesively bond the covering layer 5 over the encapsulations 6 of a plurality of semiconductor components and separate them from one another together with the semiconductor components. It is also possible to print the covering layer 5 onto the encapsulations 6 of a plurality of semiconductor components. However, the encapsulations 6 must then form a planar area.
- FIG. 3 shows in a third exemplary embodiment a schematic cross-sectional illustration of an optoelectronic semiconductor component whose basic body 1 is also formed by the substrate 7 .
- the semiconductor chip 3 is arranged on the substrate 7 and the semiconductor chip 3 is embedded in the two-layered body, namely the encapsulation 6 with scattering particles and, applied thereto, the covering layer 5 with absorber.
- the covering layer 5 is cast or injection-molded onto the encapsulation 6 .
- the covering layer 5 with absorber encapsulates the encapsulation 6 with scattering particles, wherein the filling level of the covering layer 5 reaches as far as the substrate 7 in this exemplary embodiment.
- Extraneous light incident into the semiconductor component is screened particularly effectively, wherein the brightness of the light emitted by the semiconductor chip does not have to be increased.
Abstract
Description
- This application is a continuation of co-pending International Application No. PCT/DE2007/002091, filed Nov. 16, 2007, which designated the United States and was not published in English, and which claims priority to German Application No. 10 2006 059 994.2 filed Dec. 19, 2006, both of which applications are incorporated herein by reference.
- The invention relates to an optoelectronic semiconductor component comprising a basic body, at least one semiconductor chip arranged thereon, and an encapsulation embedding the at least one semiconductor chip and composed of a radiation-transmissive material with scattering particles.
- Optoelectronic semiconductor components are used, for example, in an area of display technology where a homogeneously illuminated and high-contrast image is important.
- A production method for conventional optoelectronic semiconductor components of the type mentioned involves firstly injection-molding a suitable plastic material around a prefabricated leadframe, the material forming a basic body for the housing of the device. The basic body has a cutout at the top side, connections of the leadframe being led into the cutout from two opposite sides. On one connection, the semiconductor chip, for example, an LED chip or a laser diode, is adhesively bonded and electrically contact-connected. A generally radiation-transmissive potting compound is then filled into the cutout and embeds the semiconductor body. This basic form of a surface-mountable optoelectronic semiconductor component is known, for example, from the article “SIEMENS SMT-TOPLED für die Oberflächenmontage”, [“SIEMENS SMT-TOPLED for surface mounting”], F. Möllmer und G. Waitl, Siemens Components 29 (1991),
Issue 4, pages 147-149. - In order to generate, in a video display, for example, an image that is illuminated as homogeneously as possible and has the highest possible contrast, the light sources used are optoelectronic semiconductor components whose basic bodies are entirely diffusely reflective, that is to say they appear white, or basic bodies whose edge region is printed dark, and the rest of the basic body remains white. A dark embodiment of the basic body of the semiconductor components results in the generation of a high-contrast image. The contrast can be reduced by incidence of extraneous light, since the extraneous light is reflected at the emission area of the semiconductor component and the chip surface. By way of example, the contrast decreases as the brightness of the ambient light increases and the displayed image appears bleached out.
- If the potting compound of the semiconductor components also contains scattering particles, then the emission area is diffusely reflective. The contrast and the homogeneity of the image can be optimized further by the use of screen devices and/or diffuser plates disposed upstream of the optoelectronic semiconductor components. However, these devices also lead to a loss of light, such that the light emitted by the semiconductor chip must have a higher brightness.
- In one aspect, the invention specifies an optoelectronic semiconductor component, such that the light emitted by the semiconductor chip appears as a homogeneous luminous area and the semiconductor component enables a high-contrast image.
- For example, an optoelectronic semiconductor component of the type mentioned in the introduction can be characterized in that a radiation-transmissive covering layer with an absorber is applied to the encapsulation.
- The optoelectronic semiconductor components according to the invention generate a homogeneously illuminated and high-contrast image on a video display, wherein the individual pixels appear homogeneously illuminated over the entire pixel area available to them, that is to say not as a small spot generated by the semiconductor chip. The edge regions or dimmed-down or switched-off regions of the image also appear black. By virtue of the application of the radiation-transmissive covering layer with the absorber, the proportion of incident extraneous light is minimized and, as a result, the high-contrast image is generated even as the ambient light brightness increases. By virtue of the scattering particles in the radiation-transmissive material of the encapsulation, the light emitted by the semiconductor chip appears as a homogeneous large luminous area.
- By virtue of the separation into two layers, namely the encapsulation containing scattering particles and the covering layer containing absorber that is applied to the encapsulation, a scattering particle density in the encapsulation has no influence on the absorption effect of the covering layer. The advantage is that the proportion of absorber in the covering layer, as the scattering particle density increases, does not have to be increased in order to obtain the same contrast. The absorption loss of the emitted light is therefore kept low. A further advantage is that in the case of an increased contrast, the brightness of the emitted light remains the same. That is to say that the requirements made of the brightness of the optoelectronic semiconductor component in the case of increased contrast are therefore reduced. Furthermore, contrast-enhancing elements disposed upstream of the semiconductor components can be obviated, for example a frame for screening against incident ambient light.
- In a further advantageous embodiment, the basic body is produced from a material which is at least partly absorbent for a radiation emitted by the semiconductor chip. The basic body is produced, for example, from a dark or black plastic. This results in a good contrast between the emission area of the component and the rest of the device area.
- Further advantageous configurations of the invention are specified in the subclaims.
- The invention is explained in more detail below on the basis of exemplary embodiments. In the figures:
-
FIG. 1 shows a schematic cross-sectional illustration of a first exemplary embodiment; -
FIGS. 1A and 1B show other embodiments of the invention; -
FIG. 2 shows a schematic cross-sectional illustration of a second exemplary embodiment; and -
FIG. 3 shows a schematic cross-sectional illustration of a third exemplary embodiment. -
FIGS. 1 to 3 show exemplary embodiments of an optoelectronic semiconductor component using surface mounting technology (SMT), wherein identical parts of the semiconductor component are identified by the same reference symbols in the figures. -
FIG. 1 shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with a first exemplary embodiment of the present invention. - The
basic body 1 for the semiconductor component is formed by injection-molding a suitable plastic material around aleadframe 2 to form a housing. Thebasic body 1 has a central cutout, in which asemiconductor chip 3 such as, for example, an optoelectronic transmitter or receiver is arranged and is electrically conductively connected to theelectrical connections leadframe 2 by means of bondingwire technology 4. - An
inner area 10 of the cutout of thebasic body 1 is embodied in oblique fashion and produced from a black plastic. This results in a good contrast between anemission area 11 of the component and the rest of the device area of thebasic body 1. By way of example, a plastic material, preferably a thermoplastic or thermosetting plastic, is used for thebasic body 1. - The
semiconductor chip 3 is embedded in a radiation-transmissive encapsulation 6, which is produced from a potting compound with scattering particles. In this exemplary embodiment, the filling level of theencapsulation 6 terminates below the surface of thebasic body 1. However, it is pointed out that in the context of the present invention, other filling levels of theencapsulation 6 in the cutout of thebasic body 1 can also be chosen, of course, as necessary. Two of such exemplary embodiments are shown inFIGS. 1A and 1B . - A covering
layer 5 with absorber, which is a radiation-transmissive potting compound with absorber, is applied over the radiation-transmissive encapsulation 6 with scattering particles. In this exemplary embodiment, the filling level of the coveringlayer 5 terminates with the surface of thebasic body 1. The absorber in the coveringlayer 5 absorbs externally incident extraneous light and thus prevents a reduction of a contrast due to reflection of the extraneous light at theemission area 11 or the chip surface. It is also possible to adhesively bond the coveringlayer 5 as lamina onto theencapsulation 6. - By way of example, an epoxy resin or silicone is used as material for the potting compound of the
encapsulation 6 and the coveringlayer 5. The scattering particles in theencapsulation 6 are an aluminum oxide, for example. Carbon black, for example, is used as an absorber in the coveringlayer 5. -
FIG. 1A shows an exemplary embodiment wherein the filling level of theencapsulation 6 in the cutout of thebasic body 1 terminates with astep 8 in theinner area 10. The filling level of thecovering layer 5 applied to theencapsulation 6 terminates with the surface of thebasic body 1. The horizontal extent of thecovering layer 5 is greater than the horizontal area of theencapsulation 6 that terminates at the step. -
FIG. 1B shows an exemplary embodiment wherein the filling level of theencapsulation 6 in the cutout of thebasic body 1 terminates with awave 9 in theinner area 10. The filling level of thecovering layer 5 applied to theencapsulation 6 terminates with the surface of thebasic body 1. The horizontal extent of the covering layer is greater than the horizontal area of theencapsulation 6 that terminates at thewave 9. In the vertical direction, the filling level begins in an edge region of thecovering layer 5 below theencapsulation 6. -
FIG. 2 shows in a second exemplary embodiment a schematic cross-sectional illustration of an optoelectronic semiconductor component whosebasic body 1 is formed by a substrate 7. - The
semiconductor chip 3 is arranged on the substrate 7 and embedded in a two-layered body, namely theencapsulation 6 with scattering particles and, applied thereto, thecovering layer 5 with absorber. The two-layered body is cast or injection-molded onto the substrate 7, thecovering layer 5 being cast or injection-molded onto theencapsulation 6. - The
encapsulation 6 and thecovering layer 5 are produced from epoxy resin, silicone or silicone-epoxide hybrid. The substrate 7 is produced from ceramic or epoxy resin with glass fiber fabric, also known by the abbreviation FR4. The scattering particles in theencapsulation 6 are an aluminum oxide, for example. Carbon black, for example, is used as absorber in thecovering layer 5. - It is also possible to print or adhesively bond the
covering layer 5 as lamina onto theencapsulation 6. - It is possible to adhesively bond the
covering layer 5 over theencapsulations 6 of a plurality of semiconductor components and separate them from one another together with the semiconductor components. It is also possible to print thecovering layer 5 onto theencapsulations 6 of a plurality of semiconductor components. However, theencapsulations 6 must then form a planar area. -
FIG. 3 shows in a third exemplary embodiment a schematic cross-sectional illustration of an optoelectronic semiconductor component whosebasic body 1 is also formed by the substrate 7. - The
semiconductor chip 3 is arranged on the substrate 7 and thesemiconductor chip 3 is embedded in the two-layered body, namely theencapsulation 6 with scattering particles and, applied thereto, thecovering layer 5 with absorber. - The
covering layer 5 is cast or injection-molded onto theencapsulation 6. In this case, thecovering layer 5 with absorber encapsulates theencapsulation 6 with scattering particles, wherein the filling level of thecovering layer 5 reaches as far as the substrate 7 in this exemplary embodiment. Extraneous light incident into the semiconductor component is screened particularly effectively, wherein the brightness of the light emitted by the semiconductor chip does not have to be increased. - It is pointed out that it is also possible to embed the semiconductor chip into a potting compound with scattering particles and to add absorber into the potting compound, without applying a covering layer. The addition of absorber has the disadvantage, however, that in the case of an increased proportion of scattering particles, the absorber concentration must also be high in order to achieve the same contrast. However, a higher absorber concentration also leads to an increased absorption of the light emitted by the semiconductor chip. This interaction can be eliminated by the separation into an encapsulation with scattering particles and an absorbent covering layer, as described in the previous exemplary embodiments.
- The invention is not restricted by the description on the basis of the exemplary embodiments. Rather, the invention encompasses any new feature and also any combination of features, which in particular comprises any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102006059994A DE102006059994A1 (en) | 2006-12-19 | 2006-12-19 | Optoelectronic semiconductor component |
DE102006059994.2 | 2006-12-19 | ||
DE102006059994 | 2006-12-19 | ||
PCT/DE2007/002091 WO2008074286A1 (en) | 2006-12-19 | 2007-11-16 | Optoelectronic semiconductor component |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2007/002091 Continuation WO2008074286A1 (en) | 2006-12-19 | 2007-11-16 | Optoelectronic semiconductor component |
Publications (2)
Publication Number | Publication Date |
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US20090267107A1 true US20090267107A1 (en) | 2009-10-29 |
US8026526B2 US8026526B2 (en) | 2011-09-27 |
Family
ID=39185899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/478,517 Expired - Fee Related US8026526B2 (en) | 2006-12-19 | 2009-06-04 | Optoelectronic semiconductor component |
Country Status (7)
Country | Link |
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US (1) | US8026526B2 (en) |
EP (1) | EP2054949B1 (en) |
KR (1) | KR20090096616A (en) |
CN (1) | CN101548396B (en) |
DE (1) | DE102006059994A1 (en) |
TW (1) | TWI389266B (en) |
WO (1) | WO2008074286A1 (en) |
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US20110002587A1 (en) * | 2007-01-11 | 2011-01-06 | Georg Bogner | Housing for an Optoelectronic Component and Arrangement of an Optoelectronic Component in a Housing |
US20110121336A1 (en) * | 2007-12-14 | 2011-05-26 | Osram Opto Semiconductors Gmbh | Arrangement Comprising at Least one Optoelectronics Semiconductor Component |
US20110303944A1 (en) * | 2008-09-22 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Housing for an Optoelectronic Component |
US20140036480A1 (en) * | 2010-01-18 | 2014-02-06 | LG Innotek Co ., Ltd. | Lighting unit and display device having the same |
US20140217444A1 (en) * | 2011-06-20 | 2014-08-07 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for the production thereof |
US20150076541A1 (en) * | 2013-09-13 | 2015-03-19 | Kabushiki Kaisha Toshiba | Light-emitting device |
US20160064634A1 (en) * | 2013-04-19 | 2016-03-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
JP2017199748A (en) * | 2016-04-26 | 2017-11-02 | スタンレー電気株式会社 | Light emitting device |
JP2023095089A (en) * | 2021-12-24 | 2023-07-06 | 日東電工株式会社 | Optical semiconductor element encapsulation sheet |
JP2023095090A (en) * | 2021-12-24 | 2023-07-06 | 日東電工株式会社 | Optical semiconductor element encapsulation sheet |
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DE102006004397A1 (en) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelectronic component, e.g. light emitting diode, has housing with housing material that is permeable for useful radiation and has radiation absorbing particles to adjust predetermined radiation or luminous intensity of radiation |
DE102007015474A1 (en) * | 2007-03-30 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation-emitting optoelectronic component and method for producing an optoelectronic component |
TW201115779A (en) * | 2009-10-26 | 2011-05-01 | Gio Optoelectronics Corp | Light emitting apparatus |
TW201330332A (en) * | 2012-01-02 | 2013-07-16 | Lextar Electronics Corp | Solid-state light-emitting device and solid-state light-emitting package thereof |
KR20140130884A (en) * | 2013-05-02 | 2014-11-12 | 주식회사 포스코엘이디 | Optical semiconductor illuminating apparatus |
US9680073B2 (en) * | 2014-05-30 | 2017-06-13 | Seoul Semiconductor Co., Ltd. | Light emitting module |
DE102015109324A1 (en) * | 2015-06-11 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Method and arrangement |
JP6711229B2 (en) | 2016-09-30 | 2020-06-17 | 日亜化学工業株式会社 | Printed circuit board manufacturing method and light emitting device manufacturing method |
DE102019108560A1 (en) * | 2019-04-02 | 2020-10-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic component and method for producing an optoelectronic component |
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DE10020465A1 (en) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with luminescence conversion element |
DE102004021233A1 (en) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | LED array |
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- 2006-12-19 DE DE102006059994A patent/DE102006059994A1/en not_active Withdrawn
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2007
- 2007-11-16 CN CN2007800424045A patent/CN101548396B/en not_active Expired - Fee Related
- 2007-11-16 KR KR1020097013814A patent/KR20090096616A/en not_active Application Discontinuation
- 2007-11-16 WO PCT/DE2007/002091 patent/WO2008074286A1/en active Application Filing
- 2007-11-16 EP EP07817805.0A patent/EP2054949B1/en not_active Expired - Fee Related
- 2007-12-18 TW TW096148445A patent/TWI389266B/en not_active IP Right Cessation
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2009
- 2009-06-04 US US12/478,517 patent/US8026526B2/en not_active Expired - Fee Related
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US20110002587A1 (en) * | 2007-01-11 | 2011-01-06 | Georg Bogner | Housing for an Optoelectronic Component and Arrangement of an Optoelectronic Component in a Housing |
US9054279B2 (en) | 2007-01-11 | 2015-06-09 | Osram Opto Semiconductors Gmbh | Optoelectronic component disposed in a recess of a housing and electrical componenet disposed in the housing |
US8994047B2 (en) * | 2007-12-14 | 2015-03-31 | Osram Opto Semiconductors Gmbh | Arrangement comprising at least one optoelectronics semiconductor component |
US20110121336A1 (en) * | 2007-12-14 | 2011-05-26 | Osram Opto Semiconductors Gmbh | Arrangement Comprising at Least one Optoelectronics Semiconductor Component |
US20110303944A1 (en) * | 2008-09-22 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Housing for an Optoelectronic Component |
US8558271B2 (en) * | 2008-09-22 | 2013-10-15 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component |
US20140036480A1 (en) * | 2010-01-18 | 2014-02-06 | LG Innotek Co ., Ltd. | Lighting unit and display device having the same |
US9223173B2 (en) * | 2010-01-18 | 2015-12-29 | Lg Innotek Co., Ltd. | Lighting unit and display device having the same |
US20140217444A1 (en) * | 2011-06-20 | 2014-08-07 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for the production thereof |
US9281458B2 (en) * | 2011-06-20 | 2016-03-08 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for the production thereof |
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US9780273B2 (en) * | 2013-04-19 | 2017-10-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US20150076541A1 (en) * | 2013-09-13 | 2015-03-19 | Kabushiki Kaisha Toshiba | Light-emitting device |
JP2017199748A (en) * | 2016-04-26 | 2017-11-02 | スタンレー電気株式会社 | Light emitting device |
JP2023095089A (en) * | 2021-12-24 | 2023-07-06 | 日東電工株式会社 | Optical semiconductor element encapsulation sheet |
JP2023095090A (en) * | 2021-12-24 | 2023-07-06 | 日東電工株式会社 | Optical semiconductor element encapsulation sheet |
JP7369760B2 (en) | 2021-12-24 | 2023-10-26 | 日東電工株式会社 | Sheet for encapsulating optical semiconductor devices |
JP7369761B2 (en) | 2021-12-24 | 2023-10-26 | 日東電工株式会社 | Sheet for encapsulating optical semiconductor devices |
JP7451815B2 (en) | 2021-12-24 | 2024-03-18 | 日東電工株式会社 | Sheet for encapsulating optical semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
CN101548396B (en) | 2013-03-27 |
CN101548396A (en) | 2009-09-30 |
EP2054949B1 (en) | 2017-01-25 |
WO2008074286A1 (en) | 2008-06-26 |
DE102006059994A1 (en) | 2008-06-26 |
TWI389266B (en) | 2013-03-11 |
EP2054949A1 (en) | 2009-05-06 |
US8026526B2 (en) | 2011-09-27 |
TW200834827A (en) | 2008-08-16 |
KR20090096616A (en) | 2009-09-11 |
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