US20090020825A1 - Forming dual metal complementary metal oxide semiconductor integrated circuits - Google Patents
Forming dual metal complementary metal oxide semiconductor integrated circuits Download PDFInfo
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- US20090020825A1 US20090020825A1 US12/283,217 US28321708A US2009020825A1 US 20090020825 A1 US20090020825 A1 US 20090020825A1 US 28321708 A US28321708 A US 28321708A US 2009020825 A1 US2009020825 A1 US 2009020825A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
Definitions
- the present invention relates to methods for making semiconductor devices, in particular, semiconductor devices with metal gate electrodes.
- MOS field-effect transistors with very thin gate dielectrics made from silicon dioxide may experience unacceptable gate leakage currents.
- Forming the gate dielectric from certain high dielectric constant (K) dielectric materials, instead of silicon dioxide, can reduce gate leakage.
- high-k dielectric means having a dielectric constant higher than 10.
- metal gate electrodes may be used in devices that include high-k gate dielectrics.
- a replacement gate process may be used to form gate electrodes from different metals. In that process, a first polysilicon layer, bracketed by a pair of spacers, is removed selectively to a second polysilicon layer to create a trench between the spacers. The trench is filled with a first metal. The second polysilicon layer is then removed, and replaced with a second metal that differs from the first metal.
- FIGS. 1A-1N represent cross-sections of structures that may be formed when carrying out an embodiment of the method of the present invention.
- FIGS. 1A-1N illustrate structures that may be formed, when carrying out an embodiment of the method of the present invention.
- high-k gate dielectric layer 170 and a sacrificial metal layer 169 are formed on substrate 100 , generating the FIG. 1A structure.
- Substrate 100 may comprise a bulk silicon or silicon-on-insulator substructure.
- substrate 100 may comprise other materials—which may or may not be combined with silicon—such as: germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide.
- germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide such as: germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide.
- high-k gate dielectric layer 170 Some of the materials that may be used to make high-k gate dielectric layer 170 include: hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. Particularly preferred are hafnium oxide, zirconium oxide, titanium oxide and aluminum-oxide. Although a few examples of materials that may be used to form high-k gate dielectric layer 170 are described here, that layer may be made from other materials that serve to reduce gate leakage.
- the layer 170 has a dielectric constant higher than 10 and from 15 to 25 in one embodiment of the present invention.
- High-k gate dielectric layer 170 may be formed on substrate 100 using a conventional deposition method, e.g., a conventional chemical vapor deposition (“CVD”), low pressure CVD, or physical vapor deposition (“PVD”) process.
- a conventional atomic layer CVD process is used.
- a metal oxide precursor e.g., a metal chloride
- steam may be fed at selected flow rates into a CVD reactor, which is then operated at a selected temperature and pressure to generate an atomically smooth interface between substrate 100 and high-k gate dielectric layer 170 .
- the CVD reactor should be operated long enough to form a layer with the desired thickness.
- high-k gate dielectric layer 170 may be less than about 60 Angstroms thick, for example, and, in one embodiment, between about 5 Angstroms and about 40 Angstroms thick.
- a sacrificial metal layer 169 may be formed over the dielectric layer 170 .
- the sacrificial metal layer 169 may be any metal that is capable of withstanding high temperatures (greater than 450° C.) without reaction with overlying materials.
- the sacrificial metal layer 14 may be formed of titanium nitride.
- the layer 169 may be formed by sputtering. In another embodiment, the layer 169 may be formed by atomic layer deposition.
- sacrificial layer 171 is formed on high-k gate dielectric layer 170 as shown in FIG. 1B .
- hard mask layer 172 is then formed on sacrificial layer 171 , generating the FIG. 1B structure.
- Sacrificial layer 171 may comprise polysilicon and may be deposited on sacrificial metal layer 169 using a conventional deposition process. Sacrificial layer 171 may be, for example, between about 100 and about 2,000 Angstroms thick, and, in one embodiment, between about 500 and about 1,600 Angstroms thick.
- Hard mask layer 172 may comprise silicon nitride between about 100 and about 1000 Angstroms thick, for example, and between about 200 and about 350 Angstroms thick in one embodiment. Hard mask layer 172 may be formed on sacrificial layer 171 .
- Sacrificial layer 171 and hard mask layer 172 are then patterned to form patterned hard mask layers 130 , 131 , and patterned sacrificial layers 104 , 106 , and 169 —as FIG. 1C illustrates.
- Conventional wet or dry etch processes may be used to remove unprotected parts of hard mask layer 172 , sacrificial metal layer 169 and sacrificial layer 171 .
- exposed part 174 of high-k gate dielectric layer 170 is removed.
- high-k gate dielectric layer 170 may be removed using dry or wet etch techniques, it may be difficult to etch that layer using such processes without adversely affecting adjacent structures. It may be difficult to etch high-k gate dielectric layer 170 selectively to the underlying substrate using a dry etch process, and wet etch techniques may etch high-k gate dielectric layer 170 isotropically—undercutting overlying sacrificial layers 104 , 106 in an undesirable fashion.
- exposed part 174 of high-k gate dielectric layer 170 may be modified to facilitate its removal selectively to covered part 175 of that layer.
- Exposed part 174 may be modified by adding impurities to that part of high-k gate dielectric layer 170 after sacrificial layer 171 has been etched.
- a plasma enhanced chemical vapor deposition (“PECVD”) process may be used to add impurities to exposed part 174 of high-k gate dielectric layer 170 .
- PECVD plasma enhanced chemical vapor deposition
- a halogen or halide gas (or a combination of such gases) may be fed into a reactor prior to striking a plasma.
- the reactor should be operated under the appropriate conditions (e.g., temperature, pressure, radio frequency, and power) for a sufficient time to modify exposed part 174 to ensure that it may be removed selectively to other materials.
- a low power PECVD process e.g., one taking place at less than about 200 Watts, is used.
- hydrogen bromide (“HBr”) and chlorine (“Cl 2 ”) gases are fed into the reactor at appropriate flow rates to ensure that a plasma generated from those gases will modify exposed part 174 in the desired manner.
- HBr hydrogen bromide
- Cl 2 chlorine
- exposed part 174 After exposed part 174 has been modified, it may be removed. The presence of the added impurities enables that exposed part to be etched selectively to covered part 175 to generate the FIG. 1D structure.
- exposed part 174 is removed by exposing it to a relatively strong acid, e.g., a halide based acid (such as hydrobromic or hydrochloric acid) or phosphoric acid.
- a relatively strong acid e.g., a halide based acid (such as hydrobromic or hydrochloric acid) or phosphoric acid.
- a halide based acid such as hydrobromic or hydrochloric acid
- the acid preferably contains between about 0.5% and about 10% HBr or HCl by volume—and more preferably about 5% by volume.
- An etch process that uses such an acid may take place at or near room temperature, and last for between about 5 and about 30 minutes—although a longer exposure may be used if desired.
- the acid may contain between about 75% and about 95% H 3 PO 4 by volume.
- An etch process that uses such an acid may, for example, take place at between about 140° C. and about 180° C., and, in one embodiment, at about 160° C.
- the exposure step may last between about 30 seconds and about 5 minutes—and for about one minute for a 20 Angstrom thick film.
- FIG. 1D represents an intermediate structure that may be formed when making a complementary metal oxide semiconductor (“CMOS”). That structure includes first part 101 and second part 102 of substrate 100 shown in FIG. 1E . Isolation region 103 separates first part 101 from second part 102 . Isolation region 103 may comprise silicon dioxide, or other materials that may separate the transistor's active regions.
- First sacrificial layer 104 is formed on first high-k gate dielectric layer 105
- second sacrificial layer 106 is formed on second high-k gate dielectric layer 107 .
- Hard masks 130 , 131 are formed on sacrificial layers 104 , 106 .
- spacers may be formed on opposite sides of sacrificial layers 104 , 106 .
- spacers comprise silicon nitride
- they may be formed in the following way. First, a silicon nitride layer of substantially uniform thickness, for example, less than about 1000 Angstroms thick—is deposited over the entire structure, producing the structure shown in FIG. 1 E. Conventional deposition processes may be used to generate that structure.
- silicon nitride layer 134 is deposited directly on substrate 100 and opposite sides of sacrificial layers 104 , 106 —without first forming a buffer oxide layer on substrate 100 and layers 104 , 106 .
- a buffer oxide layer may be formed prior to forming layer 134 .
- a second oxide may be formed on layer 134 prior to etching that layer. If used, such an oxide may enable the subsequent silicon nitride etch step to generate an L-shaped spacer.
- Silicon nitride layer 134 may be etched using a conventional process for anisotropically etching silicon nitride to create the FIG. 1F structure. As a result of that etch step, sacrificial layer 104 is bracketed by a pair of sidewall spacers 108 , 109 , and sacrificial layer 106 is bracketed by a pair of sidewall spacers 110 , 111 .
- the source and drain regions 135 - 138 may be formed, after forming spacers 108 , 109 , 110 , 111 , by implanting ions into parts 101 and 102 of substrate 100 , followed by applying an appropriate anneal step.
- An ion implantation and anneal sequence used to form n-type source and drain regions within part 101 of substrate 100 may dope sacrificial layer 104 n-type at the same time.
- an ion implantation and anneal sequence used to form p-type source and drain regions within part 102 of substrate 100 may dope sacrificial layer 106 p-type.
- doping sacrificial layer 106 with boron that layer should include that element at a sufficient concentration to ensure that a subsequent wet etch process, for removing n-type germanium containing layer 104 , will not remove a significant amount of p-type sacrificial layer 106 .
- the anneal will activate the dopants that were previously introduced into the source and drain regions and tip regions and into sacrificial layers 104 , 106 .
- a rapid thermal anneal is applied that takes place at a temperature that exceeds about 1,000° C. and, optimally, that takes place at 1,080° C.
- such an anneal may modify the molecular structure of high-k gate dielectric layers 105 , 107 to create gate dielectric layers that may demonstrate improved performance.
- dielectric layer 112 may be deposited over the device, generating the FIG. 1G structure.
- Dielectric layer 112 may comprise silicon dioxide, or a low-k material.
- Dielectric layer 112 may be doped with phosphorus, boron, or other elements, and may be formed using a high density plasma deposition process.
- source and drain regions 135 , 136 , 137 , 138 which are capped by silicided regions 139 , 140 , 141 , 142 , have already been formed.
- Those source and drain regions may be formed by implanting ions into the substrate, then activating them. Alternatively, an epitaxial growth process may be used to form the source and drain regions, as will be apparent to those skilled in the art.
- FIG. 1G structure Commonly used nitride spacer, source/drain, and silicide formation techniques to make the FIG. 1G structure. That structure may include other features—not shown, so as not to obscure the method of the present invention—that may be formed using conventional process steps.
- Dielectric layer 112 is removed from hard masks 130 , 131 , which are, in turn, removed from patterned sacrificial layers 104 , 106 , producing the FIG. 1H structure.
- a conventional chemical mechanical polishing (“CMP”) operation may be applied to remove that part of dielectric layer 112 and hard masks 130 , 131 .
- Hard masks 130 , 131 may be removed to expose patterned sacrificial layers 104 , 106 .
- Hard masks 130 , 131 may be polished from the surface of layers 104 , 106 , when dielectric layer 112 is polished—as they will have served their purpose by that stage in the process.
- FIG. 1H structure After forming the FIG. 1H structure, sacrificial layers 104 or 106 are removed to generate trenches 113 , producing the structure shown in FIG. 1I .
- a 1% solution of HF may be used for 15 to 30 seconds to remove the chemical oxide formed over the remaining polysilicon.
- a wet etch process that is selective for layers 104 over sacrificial layer 106 is applied to remove layers 104 and 169 without removing significant portions of layer 106 .
- a wet etch process may comprise exposing sacrificial layer 104 to an aqueous solution that comprises a source of hydroxide for a sufficient time at a sufficient temperature to remove substantially all of layer 104 .
- That source of hydroxide may comprise between about 2 and about 30 percent ammonium hydroxide or a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide (“TMAH”), by volume in deionized water.
- TMAH tetramethyl ammonium hydroxide
- Any remaining sacrificial layer 104 may be selectively removed by exposing it to absolution, which is maintained at a temperature between about 15° C. and about 90° C. (for example, below about 40° C.), that comprises between about 2 and about 30 percent ammonium hydroxide by volume in deionized water.
- sonic energy at a frequency of between about 10 kHz and about 2,000 kHz, while dissipating at between about 1 and about 10 Watts/cm 2 .
- sacrificial layer 104 may be selectively removed by exposing it at about 25° C. for about 30 minutes to a solution that comprises about 15 percent ammonium hydroxide by volume in deionized water, while applying sonic energy at about 1,000 kHz—dissipating at about 5 Watts/cm 2 .
- a solution that comprises about 15 percent ammonium hydroxide by volume in deionized water, while applying sonic energy at about 1,000 kHz—dissipating at about 5 Watts/cm 2 .
- Such an etch process should remove substantially all of an n-type sacrificial layer without removing a meaningful amount of a p-type sacrificial layer.
- sacrificial layer 104 may be selectively removed by exposing it for at least one minute to a solution, which is maintained at a temperature between about 60° C. and about 90° C., that comprises between about 20 and about 30 percent TMAH by volume in deionized water, while applying sonic energy.
- Removing sacrificial layer 104 with a thickness of about 1,350 Angstroms, by exposing it at about 80° C. for about 2 minutes to a solution that comprises about 25 percent TMAH by volume in deionized water, while applying sonic energy at about 1,000 kHz—dissipating at about 5 Watts/cm 2 —may remove substantially all of layer 104 without removing a significant amount of layer 106 .
- First high-k gate dielectric layer 105 should be sufficiently thick to prevent the etchant that is applied to remove sacrificial layer 104 from reaching the channel region that is located beneath first high-k gate dielectric layer 105 .
- the sacrificial metal layer 169 may also be removed by selective etching. In some embodiments, the layer 169 may not be removed. In some embodiments, the dielectric layer 105 may be removed before forming the replacement metal gate. In such case, a metal oxide gate dielectric may be formed before forming the replacement gate.
- n-type metal layer 180 is formed directly on layers 105 and in the trenches 113 to generate the FIG. 1J structure.
- N-type metal layer 180 may comprise any n-type conductive material.
- N-type metal layer 180 preferably has thermal stability characteristics that render it suitable for making a metal NMOS gate electrode for a semiconductor device.
- the layer 180 may be between 30 and 1000 Angstroms thick and may be deposited by physical vapor deposition or chemical vapor deposition.
- n-type metal layer 180 Materials that may be used to form n-type metal layer 180 include: hafnium, zirconium, titanium, tantalum, aluminum, and their alloys, e.g., metal carbides that include these elements, i.e., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide.
- N-type metal layer 180 may be formed on first high-k gate dielectric layer 105 using well known PVD or CVD processes, e.g., conventional sputter or atomic layer CVD processes.
- the p-type side 200 may be masked and an n-type layer 115 may be deposited on the n-type side 202 to form the FIG. 1K structure.
- the layer 115 may be the same as the layer 180 , in one embodiment.
- N-type metal layers 115 and 180 may serve as a metal NMOS gate electrode that has a workfunction that is between about 3.9 eV and about 4.2 eV, and that is between about 100 Angstroms and about 2,000 Angstroms thick and, in one embodiment, may particularly be between about 500 Angstroms and about 1,600 Angstroms thick.
- FIG. 1K represents structures in which n-type metal layers 115 , 180 fill all of trench 113
- n-type metal layer 115 may fill only part of trench 113 , with the remainder of the trench being filled with a material that may be easily polished, e.g., tungsten, aluminum, titanium, or titanium nitride.
- n-type metal layer 115 which serves as the workfunction metal, may be between about 50 and about 1,000 Angstroms thick and, for example, at least about 100 Angstroms thick.
- the resulting metal NMOS gate electrode may be considered to comprise the combination of both the workfunction metal and the trench fill metal. If a trench fill metal is deposited on a workfunction metal, the trench fill metal may cover the entire device when deposited, forming a structure like the FIG. 1J structure. That trench fill metal must then be polished back so that it fills only the trench, generating a structure like the FIG. 1K structure.
- the masking of p-type side 200 may be removed and the horizontal portions of the layer 180 , as well as the horizontal portions of the 115 , may be polishing off, and n-type side 202 may be masked. Then a workfunction adjusting implant I is performed on the p-type side 200 as shown in FIG. 1L .
- the implant species may be nitrogen, oxygen, chlorine, fluorine, or bromine, for example, to increase the workfunction of the n-type layer 180 to make it more suitable for use in p-type transistors.
- the workfunction increasing species may be aided by plasma enhanced ion implantation, furnace diffusion, or plasma deposition, to mention a few examples.
- the species may be added until the species makes up from about 3 to about 50 atomic percent of the exposed layer 180 . In many cases, between about 5 and about 10 atomic percent may be sufficient doping. If the trenches 113 have a reentrant profile, an angled implant may be used.
- p-type metal layer 116 is formed directly on layer 180 to fill trench 115 on the p-type side 200 and to generate the FIG. 1M structure.
- P-type metal layer 116 may comprise any p-type conductive material from which a metal PMOS gate electrode may be derived.
- P-type metal layer 116 preferably has thermal stability characteristics that render it suitable for making a metal PMOS gate electrode for a semiconductor device.
- p-type metal layer 116 Materials that may be used to form p-type metal layer 116 include: ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide.
- P-type metal layer 116 may be formed on second high-k gate dielectric layer 107 using well known PVD or CVD processes, e.g., conventional sputter or atomic layer CVD processes. As shown in FIG. 1N , p-type metal layer 116 is removed except where it fills trench 113 . Layer 116 may be removed from other portions of the device via a wet or dry etch process, or an appropriate CMP operation, with dielectric 112 serving as an etch or polish stop.
- P-type metal layer 116 may serve as a metal PMOS gate electrode with a workfunction that is between about 4.9 eV and about 5.2 eV, and that is between about 100 Angstroms and about 2,000 Angstroms thick, and more preferably is between about 500 Angstroms and about 1,600 Angstroms thick.
- FIGS. 1M and 1N represent structures in which p-type metal layer 116 fills all of trench 150 , in alternative embodiments, p-type metal layer 116 may fill only part of trench 150 . As with the metal NMOS gate electrode, the remainder of the trench may be filled with a material that may be easily polished, e.g., tungsten, aluminum, titanium, or titanium nitride.
- p-type metal layer 116 which serves as the workfunction metal, may be between about 50 and about 1,000 Angstroms thick.
- the resulting metal PMOS gate electrode may be considered to comprise the combination of both the workfunction metal and the trench fill metal.
- a capping dielectric layer may be deposited onto dielectric layer 112 , metal NMOS gate electrode 115 , and metal PMOS gate electrode 116 , using any conventional deposition process. Process steps for completing the device that follow the deposition of such a capping dielectric layer, e.g., forming the device's contacts, metal interconnect, and passivation layer, are well known to those skilled in the art and will not be described here.
Abstract
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.
Description
- This application is a divisional of U.S. patent application Ser. No. 10/889,535, filed Jul. 12, 2004.
- The present invention relates to methods for making semiconductor devices, in particular, semiconductor devices with metal gate electrodes.
- MOS field-effect transistors with very thin gate dielectrics made from silicon dioxide may experience unacceptable gate leakage currents. Forming the gate dielectric from certain high dielectric constant (K) dielectric materials, instead of silicon dioxide, can reduce gate leakage. As used herein, high-k dielectric means having a dielectric constant higher than 10. When, however, a high-k dielectric film is initially formed, it may have a slightly imperfect molecular structure. To repair such a film, it may be necessary to anneal it at a relatively high temperature.
- Because such a high-k dielectric layer may not be compatible with polysilicon, it may be desirable to use metal gate electrodes in devices that include high-k gate dielectrics. When making a CMOS device that includes metal gate electrodes, it may be necessary to make the NMOS and PMOS gate electrodes from different materials. A replacement gate process may be used to form gate electrodes from different metals. In that process, a first polysilicon layer, bracketed by a pair of spacers, is removed selectively to a second polysilicon layer to create a trench between the spacers. The trench is filled with a first metal. The second polysilicon layer is then removed, and replaced with a second metal that differs from the first metal.
- Thus, there is a need for alternate ways to form replacement metal gate electrodes.
-
FIGS. 1A-1N represent cross-sections of structures that may be formed when carrying out an embodiment of the method of the present invention. - Features shown in these figures are not intended to be drawn to scale.
-
FIGS. 1A-1N illustrate structures that may be formed, when carrying out an embodiment of the method of the present invention. Initially, high-k gatedielectric layer 170 and asacrificial metal layer 169 are formed onsubstrate 100, generating theFIG. 1A structure.Substrate 100 may comprise a bulk silicon or silicon-on-insulator substructure. Alternatively,substrate 100 may comprise other materials—which may or may not be combined with silicon—such as: germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide. Although a few examples of materials from whichsubstrate 100 may be formed are described here, any material that may serve as a foundation upon which a semiconductor device may be built falls within the spirit and scope of the present invention. - Some of the materials that may be used to make high-k gate
dielectric layer 170 include: hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. Particularly preferred are hafnium oxide, zirconium oxide, titanium oxide and aluminum-oxide. Although a few examples of materials that may be used to form high-k gatedielectric layer 170 are described here, that layer may be made from other materials that serve to reduce gate leakage. Thelayer 170 has a dielectric constant higher than 10 and from 15 to 25 in one embodiment of the present invention. - High-k gate
dielectric layer 170 may be formed onsubstrate 100 using a conventional deposition method, e.g., a conventional chemical vapor deposition (“CVD”), low pressure CVD, or physical vapor deposition (“PVD”) process. Preferably, a conventional atomic layer CVD process is used. In such a process, a metal oxide precursor (e.g., a metal chloride) and steam may be fed at selected flow rates into a CVD reactor, which is then operated at a selected temperature and pressure to generate an atomically smooth interface betweensubstrate 100 and high-k gatedielectric layer 170. The CVD reactor should be operated long enough to form a layer with the desired thickness. In most applications, high-k gatedielectric layer 170 may be less than about 60 Angstroms thick, for example, and, in one embodiment, between about 5 Angstroms and about 40 Angstroms thick. - A
sacrificial metal layer 169 may be formed over thedielectric layer 170. Thesacrificial metal layer 169 may be any metal that is capable of withstanding high temperatures (greater than 450° C.) without reaction with overlying materials. As one example, the sacrificial metal layer 14 may be formed of titanium nitride. In one embodiment, thelayer 169 may be formed by sputtering. In another embodiment, thelayer 169 may be formed by atomic layer deposition. - After high-k gate
dielectric layer 170 andsacrificial metal layer 169 are formed onsubstrate 100, sacrificial layer 171 is formed on high-k gatedielectric layer 170 as shown inFIG. 1B . In this embodiment,hard mask layer 172 is then formed on sacrificial layer 171, generating theFIG. 1B structure. Sacrificial layer 171 may comprise polysilicon and may be deposited onsacrificial metal layer 169 using a conventional deposition process. Sacrificial layer 171 may be, for example, between about 100 and about 2,000 Angstroms thick, and, in one embodiment, between about 500 and about 1,600 Angstroms thick. -
Hard mask layer 172 may comprise silicon nitride between about 100 and about 1000 Angstroms thick, for example, and between about 200 and about 350 Angstroms thick in one embodiment.Hard mask layer 172 may be formed on sacrificial layer 171. - Sacrificial layer 171 and
hard mask layer 172 are then patterned to form patternedhard mask layers sacrificial layers FIG. 1C illustrates. Conventional wet or dry etch processes may be used to remove unprotected parts ofhard mask layer 172,sacrificial metal layer 169 and sacrificial layer 171. In this embodiment, after those layers have been etched, exposedpart 174 of high-k gatedielectric layer 170 is removed. - Although exposed
part 174 of high-k gatedielectric layer 170 may be removed using dry or wet etch techniques, it may be difficult to etch that layer using such processes without adversely affecting adjacent structures. It may be difficult to etch high-k gatedielectric layer 170 selectively to the underlying substrate using a dry etch process, and wet etch techniques may etch high-k gatedielectric layer 170 isotropically—undercutting overlyingsacrificial layers - To reduce the lateral removal of high-k gate
dielectric layer 170, as exposedpart 174 of that layer is etched, exposedpart 174 of high-k gatedielectric layer 170 may be modified to facilitate its removal selectively to coveredpart 175 of that layer. Exposedpart 174 may be modified by adding impurities to that part of high-k gatedielectric layer 170 after sacrificial layer 171 has been etched. A plasma enhanced chemical vapor deposition (“PECVD”) process may be used to add impurities to exposedpart 174 of high-k gatedielectric layer 170. In such a PECVD process, a halogen or halide gas (or a combination of such gases) may be fed into a reactor prior to striking a plasma. The reactor should be operated under the appropriate conditions (e.g., temperature, pressure, radio frequency, and power) for a sufficient time to modify exposedpart 174 to ensure that it may be removed selectively to other materials. In one embodiment, a low power PECVD process, e.g., one taking place at less than about 200 Watts, is used. - In one embodiment, hydrogen bromide (“HBr”) and chlorine (“Cl2”) gases are fed into the reactor at appropriate flow rates to ensure that a plasma generated from those gases will modify exposed
part 174 in the desired manner. Between about 50 and about 100 Watts wafer bias (for example, about 100 Watts) may be applied for a sufficient time to complete the desired transformation of exposedpart 174. Plasma exposure lasting less than about one minute, and perhaps as short as 5 seconds, may be adequate to cause that conversion. - After
exposed part 174 has been modified, it may be removed. The presence of the added impurities enables that exposed part to be etched selectively to coveredpart 175 to generate theFIG. 1D structure. In one embodiment, exposedpart 174 is removed by exposing it to a relatively strong acid, e.g., a halide based acid (such as hydrobromic or hydrochloric acid) or phosphoric acid. When a halide based acid is used, the acid preferably contains between about 0.5% and about 10% HBr or HCl by volume—and more preferably about 5% by volume. An etch process that uses such an acid may take place at or near room temperature, and last for between about 5 and about 30 minutes—although a longer exposure may be used if desired. When phosphoric acid is used, the acid may contain between about 75% and about 95% H3PO4 by volume. An etch process that uses such an acid may, for example, take place at between about 140° C. and about 180° C., and, in one embodiment, at about 160° C. When such an acid is used, the exposure step may last between about 30 seconds and about 5 minutes—and for about one minute for a 20 Angstrom thick film. -
FIG. 1D represents an intermediate structure that may be formed when making a complementary metal oxide semiconductor (“CMOS”). That structure includesfirst part 101 andsecond part 102 ofsubstrate 100 shown inFIG. 1E .Isolation region 103 separatesfirst part 101 fromsecond part 102.Isolation region 103 may comprise silicon dioxide, or other materials that may separate the transistor's active regions. Firstsacrificial layer 104 is formed on first high-kgate dielectric layer 105, and secondsacrificial layer 106 is formed on second high-kgate dielectric layer 107.Hard masks sacrificial layers - After forming the
FIG. 1D structure, spacers may be formed on opposite sides ofsacrificial layers - In one embodiment,
silicon nitride layer 134 is deposited directly onsubstrate 100 and opposite sides ofsacrificial layers substrate 100 andlayers layer 134. Similarly, although not shown inFIG. 1E , a second oxide may be formed onlayer 134 prior to etching that layer. If used, such an oxide may enable the subsequent silicon nitride etch step to generate an L-shaped spacer. -
Silicon nitride layer 134 may be etched using a conventional process for anisotropically etching silicon nitride to create theFIG. 1F structure. As a result of that etch step,sacrificial layer 104 is bracketed by a pair ofsidewall spacers sacrificial layer 106 is bracketed by a pair ofsidewall spacers - As is typically done, it may be desirable to perform multiple masking and ion implantation steps (
FIG. 1G ) to create lightly implantedregions 135 a-138 anear layers 104, 106 (that will ultimately serve as tip regions for the device's source and drain regions), prior to formingspacers sacrificial layers spacers parts substrate 100, followed by applying an appropriate anneal step. - An ion implantation and anneal sequence used to form n-type source and drain regions within
part 101 ofsubstrate 100 may dope sacrificial layer 104 n-type at the same time. Similarly, an ion implantation and anneal sequence used to form p-type source and drain regions withinpart 102 ofsubstrate 100 may dope sacrificial layer 106 p-type. When dopingsacrificial layer 106 with boron, that layer should include that element at a sufficient concentration to ensure that a subsequent wet etch process, for removing n-typegermanium containing layer 104, will not remove a significant amount of p-typesacrificial layer 106. - The anneal will activate the dopants that were previously introduced into the source and drain regions and tip regions and into
sacrificial layers dielectric layers - Because of the imposition of the
sacrificial metal layer 169, better performingdielectric layers 170 may result from these high temperature steps without significant reaction between the high dielectricconstant dielectric layer 170 and the sacrificial layer 171. - After forming
spacers dielectric layer 112 may be deposited over the device, generating theFIG. 1G structure.Dielectric layer 112 may comprise silicon dioxide, or a low-k material.Dielectric layer 112 may be doped with phosphorus, boron, or other elements, and may be formed using a high density plasma deposition process. By this stage of the process, source and drainregions silicided regions - Commonly used nitride spacer, source/drain, and silicide formation techniques to make the
FIG. 1G structure. That structure may include other features—not shown, so as not to obscure the method of the present invention—that may be formed using conventional process steps. -
Dielectric layer 112 is removed fromhard masks sacrificial layers FIG. 1H structure. A conventional chemical mechanical polishing (“CMP”) operation may be applied to remove that part ofdielectric layer 112 andhard masks Hard masks sacrificial layers Hard masks layers dielectric layer 112 is polished—as they will have served their purpose by that stage in the process. - After forming the
FIG. 1H structure,sacrificial layers trenches 113, producing the structure shown inFIG. 1I . A 1% solution of HF may be used for 15 to 30 seconds to remove the chemical oxide formed over the remaining polysilicon. - In a second embodiment, a wet etch process that is selective for
layers 104 oversacrificial layer 106 is applied to removelayers layer 106. Whensacrificial layer 104 is doped n-type, andsacrificial layer 106 is doped p-type (e.g., with boron), such a wet etch process may comprise exposingsacrificial layer 104 to an aqueous solution that comprises a source of hydroxide for a sufficient time at a sufficient temperature to remove substantially all oflayer 104. That source of hydroxide may comprise between about 2 and about 30 percent ammonium hydroxide or a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide (“TMAH”), by volume in deionized water. Any remainingsacrificial layer 104 may be selectively removed by exposing it to absolution, which is maintained at a temperature between about 15° C. and about 90° C. (for example, below about 40° C.), that comprises between about 2 and about 30 percent ammonium hydroxide by volume in deionized water. During that exposure step, which preferably lasts at least one minute, it may be desirable to apply sonic energy at a frequency of between about 10 kHz and about 2,000 kHz, while dissipating at between about 1 and about 10 Watts/cm2. - In the second embodiment,
sacrificial layer 104, with a thickness of about 1,350 Angstroms, may be selectively removed by exposing it at about 25° C. for about 30 minutes to a solution that comprises about 15 percent ammonium hydroxide by volume in deionized water, while applying sonic energy at about 1,000 kHz—dissipating at about 5 Watts/cm2. Such an etch process should remove substantially all of an n-type sacrificial layer without removing a meaningful amount of a p-type sacrificial layer. - As a third embodiment,
sacrificial layer 104 may be selectively removed by exposing it for at least one minute to a solution, which is maintained at a temperature between about 60° C. and about 90° C., that comprises between about 20 and about 30 percent TMAH by volume in deionized water, while applying sonic energy. Removingsacrificial layer 104, with a thickness of about 1,350 Angstroms, by exposing it at about 80° C. for about 2 minutes to a solution that comprises about 25 percent TMAH by volume in deionized water, while applying sonic energy at about 1,000 kHz—dissipating at about 5 Watts/cm2—may remove substantially all oflayer 104 without removing a significant amount oflayer 106. First high-kgate dielectric layer 105 should be sufficiently thick to prevent the etchant that is applied to removesacrificial layer 104 from reaching the channel region that is located beneath first high-kgate dielectric layer 105. - The
sacrificial metal layer 169 may also be removed by selective etching. In some embodiments, thelayer 169 may not be removed. In some embodiments, thedielectric layer 105 may be removed before forming the replacement metal gate. In such case, a metal oxide gate dielectric may be formed before forming the replacement gate. - In the illustrated embodiment, n-
type metal layer 180 is formed directly onlayers 105 and in thetrenches 113 to generate theFIG. 1J structure. N-type metal layer 180 may comprise any n-type conductive material. N-type metal layer 180 preferably has thermal stability characteristics that render it suitable for making a metal NMOS gate electrode for a semiconductor device. In one embodiment, thelayer 180 may be between 30 and 1000 Angstroms thick and may be deposited by physical vapor deposition or chemical vapor deposition. - Materials that may be used to form n-
type metal layer 180 include: hafnium, zirconium, titanium, tantalum, aluminum, and their alloys, e.g., metal carbides that include these elements, i.e., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide. N-type metal layer 180 may be formed on first high-kgate dielectric layer 105 using well known PVD or CVD processes, e.g., conventional sputter or atomic layer CVD processes. - The p-
type side 200 may be masked and an n-type layer 115 may be deposited on the n-type side 202 to form theFIG. 1K structure. Thelayer 115 may be the same as thelayer 180, in one embodiment. - N-
type metal layers FIG. 1K represents structures in which n-type metal layers trench 113, in alternative embodiments, n-type metal layer 115 may fill only part oftrench 113, with the remainder of the trench being filled with a material that may be easily polished, e.g., tungsten, aluminum, titanium, or titanium nitride. Using a higher conductivity fill metal in place of the workfunction metal may improve the overall conductivity of the gate stack. In such an alternative embodiment, n-type metal layer 115, which serves as the workfunction metal, may be between about 50 and about 1,000 Angstroms thick and, for example, at least about 100 Angstroms thick. - In embodiments in which
trench 113 includes both a workfunction metal and a trench fill metal, the resulting metal NMOS gate electrode may be considered to comprise the combination of both the workfunction metal and the trench fill metal. If a trench fill metal is deposited on a workfunction metal, the trench fill metal may cover the entire device when deposited, forming a structure like theFIG. 1J structure. That trench fill metal must then be polished back so that it fills only the trench, generating a structure like theFIG. 1K structure. - In the illustrated embodiment, after forming n-
type metal layer 115 withintrench 113, the masking of p-type side 200 may be removed and the horizontal portions of thelayer 180, as well as the horizontal portions of the 115, may be polishing off, and n-type side 202 may be masked. Then a workfunction adjusting implant I is performed on the p-type side 200 as shown inFIG. 1L . The implant species may be nitrogen, oxygen, chlorine, fluorine, or bromine, for example, to increase the workfunction of the n-type layer 180 to make it more suitable for use in p-type transistors. Alternatively, the workfunction increasing species may be aided by plasma enhanced ion implantation, furnace diffusion, or plasma deposition, to mention a few examples. The species may be added until the species makes up from about 3 to about 50 atomic percent of the exposedlayer 180. In many cases, between about 5 and about 10 atomic percent may be sufficient doping. If thetrenches 113 have a reentrant profile, an angled implant may be used. - In this embodiment, p-
type metal layer 116 is formed directly onlayer 180 to filltrench 115 on the p-type side 200 and to generate theFIG. 1M structure. P-type metal layer 116 may comprise any p-type conductive material from which a metal PMOS gate electrode may be derived. P-type metal layer 116 preferably has thermal stability characteristics that render it suitable for making a metal PMOS gate electrode for a semiconductor device. - Materials that may be used to form p-
type metal layer 116 include: ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide. P-type metal layer 116 may be formed on second high-kgate dielectric layer 107 using well known PVD or CVD processes, e.g., conventional sputter or atomic layer CVD processes. As shown inFIG. 1N , p-type metal layer 116 is removed except where it fillstrench 113.Layer 116 may be removed from other portions of the device via a wet or dry etch process, or an appropriate CMP operation, with dielectric 112 serving as an etch or polish stop. - P-
type metal layer 116 may serve as a metal PMOS gate electrode with a workfunction that is between about 4.9 eV and about 5.2 eV, and that is between about 100 Angstroms and about 2,000 Angstroms thick, and more preferably is between about 500 Angstroms and about 1,600 Angstroms thick. AlthoughFIGS. 1M and 1N represent structures in which p-type metal layer 116 fills all of trench 150, in alternative embodiments, p-type metal layer 116 may fill only part of trench 150. As with the metal NMOS gate electrode, the remainder of the trench may be filled with a material that may be easily polished, e.g., tungsten, aluminum, titanium, or titanium nitride. In such an alternative embodiment, p-type metal layer 116, which serves as the workfunction metal, may be between about 50 and about 1,000 Angstroms thick. Like the metal NMOS gate electrode, in embodiments in which trench 150 includes a workfunction metal and a trench fill metal, the resulting metal PMOS gate electrode may be considered to comprise the combination of both the workfunction metal and the trench fill metal. - After removing
metal layer 116, except where it fillstrench 113, a capping dielectric layer may be deposited ontodielectric layer 112, metalNMOS gate electrode 115, and metalPMOS gate electrode 116, using any conventional deposition process. Process steps for completing the device that follow the deposition of such a capping dielectric layer, e.g., forming the device's contacts, metal interconnect, and passivation layer, are well known to those skilled in the art and will not be described here. - While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims (5)
1. A semiconductor structure comprising:
a transistor of a first type including a gate electrode;
a transistor of a second type including a gate electrode, said transistor of a second type including a gate dielectric, a first metal over said gate dielectric, and a second metal over said first metal, said first metal having an altered workfunction.
2. The structure of claim 1 wherein the workfunction of said first metal has been increased.
3. The structure of claim 2 wherein said transistor of a first type has a metal layer of the same material as the first metal layer of said transistor of a second type but said first metal layer has a different workfunction than said metal layer of said transistor of a first type.
4. The structure of claim 3 wherein said transistor of said first type is an n-type transistor and said transistor of a second type is a p-type transistor.
5. The structure of claim 4 wherein said transistors include a gate dielectric layer having a dielectric constant greater than 10.
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US10/889,535 US7439113B2 (en) | 2004-07-12 | 2004-07-12 | Forming dual metal complementary metal oxide semiconductor integrated circuits |
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WO2006017190A1 (en) | 2006-02-16 |
US20060006522A1 (en) | 2006-01-12 |
US7439113B2 (en) | 2008-10-21 |
TW200616154A (en) | 2006-05-16 |
CN101076888A (en) | 2007-11-21 |
CN101076888B (en) | 2010-12-08 |
TWI297926B (en) | 2008-06-11 |
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