US20090011527A1 - Producing a surface-mountable radiation emitting component - Google Patents

Producing a surface-mountable radiation emitting component Download PDF

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Publication number
US20090011527A1
US20090011527A1 US12/211,256 US21125608A US2009011527A1 US 20090011527 A1 US20090011527 A1 US 20090011527A1 US 21125608 A US21125608 A US 21125608A US 2009011527 A1 US2009011527 A1 US 2009011527A1
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United States
Prior art keywords
molding material
leadframe
conversion material
resin
radiation
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Abandoned
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US12/211,256
Inventor
Herbert Brunner
Klaus Hohn
Harald Jager
Josef Schmid
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Osram GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Priority to US12/211,256 priority Critical patent/US20090011527A1/en
Assigned to OSRAM GMBH reassignment OSRAM GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM OTO SEMICONDUCTORS GMBH
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JAGER, HARALD, BRUNNER, HERBERT, HOHN, KLAUS, SCHMID, JOSEF
Assigned to OSRAM GMBH reassignment OSRAM GMBH CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNORS NAME PREVIOUSLY RECORDED ON REEL 021843 FRAME 0333. ASSIGNOR(S) HEREBY CONFIRMS THE THE CORRECT ASSIGNORS NAME IS OSRAM OPTO SEMICONDUCTORS GMBH. Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
Publication of US20090011527A1 publication Critical patent/US20090011527A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
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    • H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Definitions

  • WO 98/12757 describes a wavelength-converting potting compound for an electroluminescent component having a body which emits ultraviolet, blue or green light and is based on a transparent epoxy resin and to which a phosphor, in particular an inorganic luminescent pigment powder comprising luminescent pigments from the group consisting of the phosphors, has been added.
  • a preferred embodiment described is a white light source wherein a radiation-emitting semiconductor LED based on GaAlN, having an emission maximum between 420 nm and 460 nm, is used together with a phosphor which is chosen so that a blue radiation emitted by the semiconductor body is converted into complementary wavelength ranges, in particular blue and yellow, or into additive color triplets, e.g.
  • published international application WO 98/54929 discloses a semiconductor element emitting visible light and having a UV/blue LED which is arranged in a depression in a support body whose surface has a light-reflecting layer and is filled with a transparent material which surrounds the LED on its light exit sides.
  • the transparent material has a refractive index which is lower than the refractive index of the optically active region of the LED.
  • a pre-housed component is first produced by surrounding a prefabricated leadframe with a suitable plastics material by injection molding.
  • the plastics material forms the housing of the component.
  • the component has, at the top, a depression into which leadframe connections are introduced from two opposite sides, onto one of which connections a semiconductor LED is adhesively bonded and electrically contacted.
  • a potting compound to which the phosphor has been added, as a rule a transparent epoxy resin, is then introduced into this depression.
  • a molding material encasing the leadframe and the radiation-emitting chip and having a shape defining a mounting surface of the component, the mounting surface extending at a first predetermined angle relative to a main emission direction of the component;
  • a method for producing a surface-mountable, radiation-emitting component comprising the following steps:
  • the radiation-emitting chip may be a light-emitting diode chip such as, for example, a semiconductor LED or a semiconductor laser. Preferably, this chip emits electromagnetic radiation in the ultraviolet or blue spectral range.
  • the main emission direction may also be arranged perpendicular to the mounting surface so that the first predetermined angle is 90°.
  • a similar configuration having a first predetermined angle between 70° and 90° is likewise possible.
  • a parallel or approximately parallel configuration of the connection surfaces of the leadframe relative to the mounting surfaces with a second predetermined angle between O° and 20° is advantageous. Said angle ranges do not of course restrict the invention.
  • a further advantage of a component which has a radiation-emitting chip mounted on a leadframe and is surrounded by a molding material is a very compact design and very little space requirement of the component in combination with good heat removal. Very tightly packed modules with a multiplicity of such components can thus be realized with such components.
  • the molding material is preferably resin-based, in particular formed from a prereacted resin.
  • the molding material is particularly preferably prepared by mixing and blending a radiation-permeable plastics compression molding material with a conversion material.
  • passages or lateral recesses are provided in the leadframe. These passages or recesses are filled by the plastics compression molding material, resulting in mechanically stable anchoring of the leadframe in the plastics compression molding material.
  • the component has a top surface parallel to the mounting surface. This permits the use of the component in so-called pick & place processes, preferably in combination with automatic equipping apparatuses.
  • the component is sucked on a surface by a suction arm, transported to its intended equipping location and mounted there. This requires as a rule parallel and flat suction and mounting surfaces.
  • An advantageous further development of the invention comprises shaping the covering in such a way that the component is bounded in the emission direction by a curved surface.
  • the covering thus simultaneously performs the function of an optical element, for example of a lens.
  • an optical element for example of a lens.
  • both focusing and extension of the emission characteristic can be achieved.
  • the invention is suitable as a white light source or as a colored light source, it being possible for color location and color saturation to be freely established within wide limits when suitable conversion materials are used. Owing to a certain proportion of white light, the optical impression of an unsaturated emission color may be evoked in the case of a colored light source.
  • the invention is not restricted to the visible optical spectral range.
  • the radiation-emitting chip and/or the conversion element can also be provided for ultraviolet or infrared radiation emission.
  • mixed-“color” infrared or ultraviolet radiation i.e. infrared or ultraviolet radiation having two or more spectral components, can be produced.
  • the component advantageously dispenses with the formation of a depression and the use of two different materials and instead envisages the use of a single transparent molding material which is optionally first mixed with the conversion material and then shaped, preferably injection molded, around the leadframe.
  • the cured molding material thus simultaneously serves as a component housing and as a transparent conversion material matrix.
  • the production process is considerably simplified since the housing is formed in a single shaping process, in particular an injection molding process.
  • the molding material may serve as the matrix for the conversion material.
  • a component is produced which has improved stability properties since the problem of adhesion between two surrounding materials, such as, for example, a basic housing body and an encapsulation, which moreover, may have different coefficients of thermal expansion, no longer occurs.
  • the color locations are established in a reproducible and specific manner within narrow limits by virtue of the fact that the sedimentation of the conversion materials during storage and processing, in particular through rapid curing steps, is very substantially ruled out.
  • the quality of the conversion materials is increased by simple process steps with simpler metering possibilities in the resin preparation, mixing and metering.
  • the plastics compression molding material as a starting material, may be a commercially available compression molding material and substantially comprises, for example, an epoxy-cresol novolak or conventional epoxy resin systems with an anhydride or a conventional phenol curing system.
  • the conversion material dispersed in the plastics compression molding material may be an inorganic luminescent pigment powder which contains phosphors of the general formula A 3 B 5 X 12 :M.
  • particles from the group consisting of the Ce-doped garnets may be used as luminescent pigments, Ce-doped yttrium aluminum garnet (Y 3 Al 5 O 12 Ce) being mentioned in particular.
  • Further possible phosphors are sulfide- and oxysulfide-based host lattices, aluminates, borates, etc., having metal centers appropriately excitable in the short-wave range. Organometallic phosphor systems may also be used.
  • the luminescent pigments may also contain a plurality of different phosphors and the conversion material may contain a plurality of different luminescent pigments.
  • the phosphor can also be formed by soluble and sparingly soluble organic dyes and phosphor mixtures.
  • an adhesion promoter preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material.
  • an adhesion promoter preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material.
  • 3-glycidyloxypropyltrimethoxysilane or further derivatives based on trialkoxysilane can be used as adhesion promoters.
  • Monofunctional and polyfunctional polar agents having carboxyl, carboxylic ester, ether and alcohol groups can be used for modifying the phosphor surfaces. This improves the wettability of the high-energy phosphor surfaces and hence the compatibility and dispersing during the processing with the molding material.
  • a mold release agent or lubricant can be mixed with the plastics compression molding material before the mixing with the conversion material.
  • Such mold release agents facilitate the removal of the cured molding material from the mold.
  • a solid wax-based mold release agent or a metal soap with long-chain carboxylic acids, in particular stearates, can be used as such a mold release agent.
  • glass particles are added to the molding material as a filler.
  • the glass transition temperature T, of the molding material is thus increased.
  • the glass transition temperature of the molding material limits the temperature range permissible for the component since exceeding the glass transition temperature may lead to flow of the molding material and consequently to stresses and defects in the radiation-emitting chip and wire connections attached thereto.
  • the addition of glass particles to the molding material advantageously increases the temperature range permissible for the component.
  • the component can be operated at a higher operating current and more radiation can be produced.
  • a further advantage is a reduction of the coefficient of thermal expansion of the molding material, which coefficient is therefore better adapted to the coefficient of thermal expansion of the leadframe, so that the thermal stability of the component is further increased.
  • the mean particle size of the glass particles is preferably less than 100 ⁇ m, particularly preferably less than 50 ⁇ m. Inter alia, the risk of blockage of the often narrow feed channels of an injection mold is thus reduced.
  • FIG. 1 is a schematic sectional view of a first embodiment of a component according to the invention
  • the mounting surface is parallel to the plane of the section.
  • the leadframe 10 is flat throughout and is approximately perpendicular to the mounting surface so that the second predetermined angle is about 90° within the manufacturing tolerances.
  • the leadframe connections 11 , 12 project, in a main extension direction of the mounting plane 13 determined by the mounting surface 6 , out of the covering of the component and extend, a distance away from the covering, in the direction of the mounting plane 13 .
  • the positioning of the component is thus determined solely by the mounting surface 6 , with the result that mechanical stresses between leadframe 10 and covering are avoided.
  • the slight distance of the leadframe connections 11 , 12 from the mounting plane 13 reduces the risk that the leadframe connections 11 , 12 , which project beyond the mounting plane 13 , for example owing to manufacturing tolerances in the encapsulation with molding material, lead to bending of the leadframe connections 11 , 12 or tilting of the component during mounting.
  • the component is bounded by a curved surface which is partly cylindrical in the case shown, the cylinder axis being oriented approximately parallel to the longitudinal axis of the leadframe.
  • the curved surface may also be formed spherically as part of a sphere surface or aspherically. Furthermore, both a convex surface and a concave surface are possible.
  • the semiconductor LED 1 is preferably based on GaN, InGaN, AlGaN or AlInGaN. However, it may alternatively also be based on the material system ZnS/ZnSe or on another material system suitable for this spectral range.
  • the embodiment of a component according to the invention shown in FIG. 4 , is provided with a main emission direction 7 arranged perpendicular to the mounting plane 6 .
  • the first predetermined angle here is about 90°.
  • the leadframe 10 has two S-shaped bends, the leadframe connections projecting laterally from the molding material 3 , and the connection surfaces of the leadframe connections being in the mounting plane 13 determined by the mounting surface 6 .
  • the second predetermined angle here is thus O°.
  • a radiation-emitting chip 1 in the form of a semiconductor LED is fastened, for example soldered or adhesively bonded by an electrically conductive bond, on one part of the two-part leadframe 10 .
  • a wire connection 2 is led to the other part of the leadframe.
  • leadframe 10 and semiconductor LED are surrounded by a radiation-permeable molding material comprising conversion material.
  • a transparent plastics compression molding material 3 is injection-molded onto the leadframe connections 11 and 12 in a suitable injection-molding apparatus.
  • a multiplicity of leadframes each having radiation-emitting chips mounted thereon, can also be encapsulated in a cohesive covering and subsequently divided into individual components, for example by breaking, sawing or a laser cutting method by means of a water jet.
  • the prefabrication of the leadframe 10 and the surrounding by injection molding with the molding material consisting of the plastics compression molding material 3 , the phosphor particles 4 and optionally further fillers are effected in such a way that the leadframe sections 11 and 12 are led horizontally out of the molding material.
  • the finished component can be soldered to a circuit board at the connection surfaces of the leadframe connections 11 and 12 , which connection surfaces are perpendicular to the mounting surface.
  • a component suitable for SMT (surface mounting technology) is thus produced.
  • Nitto NT 360-10.000 (with internal mold release agent)
  • compression molding materials in rod or tablet form facilitates the metering and increases the accuracy thereof compared with a compression molding material present in powder form.
  • a compression molding material present in the form of a powder or in another modification can of course also be used in the invention.
  • a compression molding material present in the form of a powder could also first be brought into rod or tablet form for more exact metering and then be further processed.
  • phosphors which are described in the above-mentioned international publications WO 97/50132 and WO 98/12757 may be present as conversion materials.
  • an inorganic luminescent pigment powder comprising phosphors having the general formula A 3 B 5 X 12 :M can be used. These are, for example, garnets doped with rare earths, in particular Ce.
  • A′ 3 B′ 5 O 12 :M′ have proven to be efficient phosphors (provided that they are not unstable under the customary production and operating conditions).
  • A′ is at least one element from the group consisting of Y, Lu, Sc, La, Gd, Tb and Sm
  • B′ is at least one element from the group consisting of Al, Ga and In
  • M′ is at least one element from the group consisting of Ce and Pr, preferably Ce.
  • Al can be at least partly replaced by Ga or In. Said phosphors are to be understood by way of example and not as restricting the general formula A 3 B 5 X 12 :M.
  • the conversion properties can be further improved by removing the dust fraction, i.e. for example particles having a particle diameter of less than 2 ⁇ m, preferably less than 1 ⁇ m, from the phosphor powder.
  • the dust fraction i.e. for example particles having a particle diameter of less than 2 ⁇ m, preferably less than 1 ⁇ m
  • the pure transmission at a wavelength of 500 nm in the case of a typical plastics matrix having a thickness of 400 ⁇ m and a phosphor concentration of 3.5% by weight with a mean phosphor particle size of 2 ⁇ m is an order of magnitude of 1,000 greater than for a particle size of 1 ⁇ m and further increases sharply with increasing particle size. For shorter wavelengths, particle sizes of 1 ⁇ m or less have a greater effect.
  • an adhesion promoter such as 3-glycidyloxy-propyltrimethoxysilane, for example having the product designation A-187 from Hüls AG, can also be used.
  • This adhesion promoter can be added to the phosphor in concentrations of up to 3% by weight directly after the drying process and can be mixed therewith overnight at room temperature.
  • the method according to the invention has been described on the basis of an SMD (surfacemounted design), but it can also be realized in the case of a so-called radial diode.

Abstract

A radiation-emitting surface-mountable component has a light-emitting diode chip mounted on a leadframe. A molding material encapsulates the leadframe and the light emitting diode chip.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a divisional of U.S. patent application Ser. No. 10/747,703, filed Dec. 29, 2003, which is a continuation of International Application No. PCT/DE02/01514, filed Apr. 25, 2002, which claims the benefit of priority under 35 U.S.C. § 119 of German Patent Application No. DE 101 31 698.4, filed Jun. 29, 2001. The disclosure of each prior application is incorporated herein by reference.
    • BACKGROUND
  • The invention relates to a surface-mountable radiation-emitting component and a process for its production.
  • German published patent application DE 38 04 293 discloses a white light source based on a semiconductor LED. Described therein is a configuration which has electroluminescence or a laser diode and wherein the emission spectrum emitted by the diode is shifted toward greater wavelengths by means of a plastics element to which a phosphorescent, light-converting organic dye has been added. The light emitted by the configuration thus has a color differing from that of the light emitted by the light-emitting diode. Depending on the type of dye added in the plastic, light-emitting diode configurations which luminesce in different colors can be produced using one and the same light-emitting diode type.
  • WO 98/12757 describes a wavelength-converting potting compound for an electroluminescent component having a body which emits ultraviolet, blue or green light and is based on a transparent epoxy resin and to which a phosphor, in particular an inorganic luminescent pigment powder comprising luminescent pigments from the group consisting of the phosphors, has been added. A preferred embodiment described is a white light source wherein a radiation-emitting semiconductor LED based on GaAlN, having an emission maximum between 420 nm and 460 nm, is used together with a phosphor which is chosen so that a blue radiation emitted by the semiconductor body is converted into complementary wavelength ranges, in particular blue and yellow, or into additive color triplets, e.g. blue, green and red. Here, the yellow or the green and the red light is 20 produced by the phosphors. The hue (hue in the CIE color table) of white light produced in this manner can be varied by a suitable choice of the phosphor or phosphors with regard to mixing and concentration.
  • Similarly, published international application WO 98/54929 discloses a semiconductor element emitting visible light and having a UV/blue LED which is arranged in a depression in a support body whose surface has a light-reflecting layer and is filled with a transparent material which surrounds the LED on its light exit sides. For improving the light output, the transparent material has a refractive index which is lower than the refractive index of the optically active region of the LED.
  • In these prior art designs, a pre-housed component is first produced by surrounding a prefabricated leadframe with a suitable plastics material by injection molding. The plastics material forms the housing of the component. The component has, at the top, a depression into which leadframe connections are introduced from two opposite sides, onto one of which connections a semiconductor LED is adhesively bonded and electrically contacted. A potting compound to which the phosphor has been added, as a rule a transparent epoxy resin, is then introduced into this depression.
  • The advantage of the prior designs is that very directed emission can be achieved by virtue of the fact that the side walls formed by the plastics housing can be in the form of inclined reflectors. In the applications wherein, however, such directed emission is not absolutely essential or is achievable in another way, the production process is relatively complicated and multistage, since the housing plastic and potting compound are formed from two different materials and have to be shaped in separate process steps. In addition, the problem of sufficient and thermally stable adhesion between the potting compound and the housing plastic always has to be solved. In practice, this constantly leads to problems, particularly with the use of high light powers.
  • In many potential applications for light-emitting diodes, such as, for example, in display elements in the automobile dashboard area, lighting in aircraft and automobiles and in full-color LED displays, there is increasingly a need for light-emitting diode configurations by means of which multicolored light, in particular white light, can be produced. As large an area of the color space as possible should be covered with regard to the color of the light produced. There is often a need for lighting and display elements which emit light having an exactly predetermined color location and an exactly predetermined color saturation.
    • SUMMARY
  • It is accordingly an object of the invention to provide a surface-mountable radiation emitter component and a corresponding production method which overcome the abovementioned disadvantages of the heretofore-known devices and methods of this general type.
  • With the foregoing and other objects in view there is provided, in accordance with the invention, a surface-mountable radiation-emitting component with a commonly encased leadframe and a radiation-emitting chip. The component comprises:
  • a leadframe and a radiation-emitting chip mounted on the leadframe;
  • a molding material encasing the leadframe and the radiation-emitting chip and having a shape defining a mounting surface of the component, the mounting surface extending at a first predetermined angle relative to a main emission direction of the component;
  • the leadframe having leadframe connections protruding out of the molding material and having connection surfaces enclosing a second predetermined angle with the mounting surface.
  • With the above and other objects in view there is also provided, in accordance with the invention, a method for producing a surface-mountable, radiation-emitting component, the method which comprises the following steps:
  • mounting a radiation-emitting chip on a leadframe;
  • preparing a molding material from a resin powder prereacted with curing agent, and optionally added further fillers; and
  • encasing the leadframe and the radiation-emitting chip with the molding material.
  • Accordingly, the invention describes a surface-mountable radiation-emitting component having a radiation-emitting chip which is mounted on a leadframe, the leadframe and the radiation-emitting chip being surrounded by a molding material which is shaped in such a way that the component has a mounting surface which is arranged at a first predetermined angle relative to a main emission direction of the component. The leadframe has leadframe connections which lead out from the molding material and have connection surfaces which are arranged at a second predetermined angle relative to the mounting surface.
  • The radiation-emitting chip may be a light-emitting diode chip such as, for example, a semiconductor LED or a semiconductor laser. Preferably, this chip emits electromagnetic radiation in the ultraviolet or blue spectral range.
  • In a preferred embodiment of the invention, the main emission direction and the mounting surface are arranged parallel so that the first angle is O°. The component is in the form of a so-called lateral emitter which emits predominantly parallel to the mounting surface or, in the installed state, to a support plate, for example a circuit board, on which the component is fastened. Such an emission characteristic is advantageous, particularly for lateral light input into a display to be illuminated, for example an LCD display, and permits a very flat design. The leadframe is preferably arranged so that the connection surfaces of the leadframe connections are perpendicular to the mounting surface or are arranged at approximately a right angle to the mounting surface, so that the second predetermined angle is 90° or, for example, is between 70° and 90°. Furthermore, the first predetermined angle may also be, for example, between O° and 20°, so that the component emits laterally without the main emission direction being oriented parallel to the mounting surface.
  • Alternatively, the main emission direction may also be arranged perpendicular to the mounting surface so that the first predetermined angle is 90°. A similar configuration having a first predetermined angle between 70° and 90° is likewise possible. In this case, a parallel or approximately parallel configuration of the connection surfaces of the leadframe relative to the mounting surfaces with a second predetermined angle between O° and 20° is advantageous. Said angle ranges do not of course restrict the invention.
  • A further advantage of a component which has a radiation-emitting chip mounted on a leadframe and is surrounded by a molding material is a very compact design and very little space requirement of the component in combination with good heat removal. Very tightly packed modules with a multiplicity of such components can thus be realized with such components.
  • The molding material is preferably resin-based, in particular formed from a prereacted resin. The molding material is particularly preferably prepared by mixing and blending a radiation-permeable plastics compression molding material with a conversion material.
  • In a preferred embodiment, the leadframe connections led out laterally extend up to the mounting plane determined by the mounting surface or to the vicinity thereof. This ensures that a support plate having corresponding conductor track structures can simultaneously serve for electric supply to the component. The leadframe connections may also end a slight distance away from the mounting plane. Contact points produced on the support plate, for example solder contact surfaces, are as a rule slightly dome-shaped and thus compensate the distance between the leadframe connections and a support plate.
  • Preferably, the leadframe as a whole is flat. This simplifies the production since no additional bends have to be made. In addition, mechanical stresses which might occur as a result of such bends are avoided. Furthermore, a flat leadframe is a planar, exactly defined mounting platform for mounting the radiation-emitting chip. This facilitates the automatic equipping and contacting with these chips. In particular, the optical recognition and control systems used for this may be confused by non-plane-parallel mounting surfaces, as may occur in prebent leadframes, for example as a result of bending tolerances. This leads to malfunctions, which are reduced in the case of flat leadframes.
  • Furthermore, it is advantageous to provide passages or lateral recesses in the leadframe. These passages or recesses are filled by the plastics compression molding material, resulting in mechanically stable anchoring of the leadframe in the plastics compression molding material.
  • In a particularly preferred embodiment, the component has a top surface parallel to the mounting surface. This permits the use of the component in so-called pick & place processes, preferably in combination with automatic equipping apparatuses. The component is sucked on a surface by a suction arm, transported to its intended equipping location and mounted there. This requires as a rule parallel and flat suction and mounting surfaces.
  • An advantageous further development of the invention comprises shaping the covering in such a way that the component is bounded in the emission direction by a curved surface. The covering thus simultaneously performs the function of an optical element, for example of a lens. Depending on the curvature and direction of curvature, both focusing and extension of the emission characteristic can be achieved. Depending on the matching of the conversion material with the radiation produced by the radiation-emitting chip, the invention is suitable as a white light source or as a colored light source, it being possible for color location and color saturation to be freely established within wide limits when suitable conversion materials are used. Owing to a certain proportion of white light, the optical impression of an unsaturated emission color may be evoked in the case of a colored light source.
  • However, the invention is not restricted to the visible optical spectral range. The radiation-emitting chip and/or the conversion element can also be provided for ultraviolet or infrared radiation emission. Thus, for example, mixed-“color” infrared or ultraviolet radiation, i.e. infrared or ultraviolet radiation having two or more spectral components, can be produced.
  • With regard to shaping, the component advantageously dispenses with the formation of a depression and the use of two different materials and instead envisages the use of a single transparent molding material which is optionally first mixed with the conversion material and then shaped, preferably injection molded, around the leadframe. The cured molding material thus simultaneously serves as a component housing and as a transparent conversion material matrix. Thus, on the one hand, the production process is considerably simplified since the housing is formed in a single shaping process, in particular an injection molding process. At the same time, the molding material may serve as the matrix for the conversion material.
  • Furthermore, a component is produced which has improved stability properties since the problem of adhesion between two surrounding materials, such as, for example, a basic housing body and an encapsulation, which moreover, may have different coefficients of thermal expansion, no longer occurs.
  • The color locations are established in a reproducible and specific manner within narrow limits by virtue of the fact that the sedimentation of the conversion materials during storage and processing, in particular through rapid curing steps, is very substantially ruled out. The quality of the conversion materials is increased by simple process steps with simpler metering possibilities in the resin preparation, mixing and metering.
  • The use of only a single material for the housing form and the conversion material matrix results in latitude for further miniaturization. This additional miniaturization potential can be utilized for the use of these components in mobile electronic product systems, for example as a white light source. Increased light yields through greater utilization of the lateral emission in special installation situations with further degrees of freedom of design or straightforward lateral light output possibilities extend the functionality.
  • The plastics compression molding material, as a starting material, may be a commercially available compression molding material and substantially comprises, for example, an epoxy-cresol novolak or conventional epoxy resin systems with an anhydride or a conventional phenol curing system.
  • The conversion material dispersed in the plastics compression molding material may be an inorganic luminescent pigment powder which contains phosphors of the general formula A3B5X12:M. In particular, particles from the group consisting of the Ce-doped garnets may be used as luminescent pigments, Ce-doped yttrium aluminum garnet (Y3Al5O12Ce) being mentioned in particular. Further possible phosphors are sulfide- and oxysulfide-based host lattices, aluminates, borates, etc., having metal centers appropriately excitable in the short-wave range. Organometallic phosphor systems may also be used. The luminescent pigments may also contain a plurality of different phosphors and the conversion material may contain a plurality of different luminescent pigments.
  • The phosphor can also be formed by soluble and sparingly soluble organic dyes and phosphor mixtures.
  • Furthermore, an adhesion promoter, preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material. Particularly when inorganic luminescent pigments are used, 3-glycidyloxypropyltrimethoxysilane or further derivatives based on trialkoxysilane can be used as adhesion promoters.
  • Monofunctional and polyfunctional polar agents having carboxyl, carboxylic ester, ether and alcohol groups, such as, for example, diethylene glycol monomethyl ether, can be used for modifying the phosphor surfaces. This improves the wettability of the high-energy phosphor surfaces and hence the compatibility and dispersing during the processing with the molding material.
  • Furthermore, a mold release agent or lubricant can be mixed with the plastics compression molding material before the mixing with the conversion material. Such mold release agents facilitate the removal of the cured molding material from the mold. A solid wax-based mold release agent or a metal soap with long-chain carboxylic acids, in particular stearates, can be used as such a mold release agent.
  • For example, inorganic fillers, by means of which the refractive index of the molding material can be increased, may be admixed as further fillers, with the result that the light yield of the component can be increased. For example, TiO2, ZrO2, α-Al2O3 or another metal oxide may be used as such fillers.
  • In an advantageous embodiment of the invention, glass particles, so-called glass fillers, are added to the molding material as a filler. The glass transition temperature T, of the molding material is thus increased. The glass transition temperature of the molding material limits the temperature range permissible for the component since exceeding the glass transition temperature may lead to flow of the molding material and consequently to stresses and defects in the radiation-emitting chip and wire connections attached thereto. The addition of glass particles to the molding material advantageously increases the temperature range permissible for the component. Furthermore, the component can be operated at a higher operating current and more radiation can be produced. A further advantage is a reduction of the coefficient of thermal expansion of the molding material, which coefficient is therefore better adapted to the coefficient of thermal expansion of the leadframe, so that the thermal stability of the component is further increased.
  • As a result of the addition of glass particles, the refractive index of the molding material is furthermore increased so that the refractive index jump between the radiation-emitting chip and the molding material is smaller and advantageously the radiation output is greater.
  • Finally, the water absorption of the molding material is reduced by the addition of glass particles. This advantageously leads to an improved thermal load capacity of the component. In particular, the risk of damage to or of bursting of the component during soldering in, owing to an excessively high water content (so-called popcorn effect), is advantageously reduced.
  • The mean particle size of the glass particles is preferably less than 100 μm, particularly preferably less than 50 μm. Inter alia, the risk of blockage of the often narrow feed channels of an injection mold is thus reduced.
  • The proportion of glass particles in the molding material may be 90% by weight or more and is preferably between 10% by weight and 50% by weight. In the last-mentioned range, the molding material is distinguished both by high transparency and by a high. glass transition temperature.
  • Preferably, the conversion material and optionally the further fillers are mixed by first mixing them coarsely and then milling the mixture in a mill, with the result that a very fine, homogeneous powder is obtained.
  • The mixed molding material may therefore contain the following constituents (in % by weight):
      • a) plastics compression molding material ≧60%
      • b) conversion material >0 and ≦40%
      • C) adhesion promoter ≧0 and ≦3%
      • d) mold release agent ≧0 and ≦2%
      • e) surface modifier ≧2 0 and ≦5%
      • f) antioxidant ≧0 and ≦5% (e.g. based on phosphite or based on sterically hindered phenols)
      • g) UV light stabilizer ≧0 and ≦2%
      • h) glass particles ≧0 and ≦80%.
  • Other features which are considered as characteristic for the invention are set forth in the appended claims.
  • Although the invention is illustrated and described herein as embodied in a surface-mountable radiation-emitting component and process for its production, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
  • The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
    • DESCRIPTION OF DRAWINGS
  • FIG. 1 is a schematic sectional view of a first embodiment of a component according to the invention;
  • FIG. 2 is a schematic sectional view of a second embodiment of a component according to the invention;
  • FIG. 3 is a schematic perspective view of a third embodiment of a component according to the invention; and
  • FIG. 4 is a schematic perspective view of a fourth embodiment of a component according to the invention.
    •  DETAILED DESCRIPTION
  • Referring now to the figures of the drawing in detail and first, particularly, to FIG. 1 thereof, there is shown an embodiment of a component according to the invention in a cross section that is taken along a longitudinal axis of a leadframe 10.
  • In an originally one-piece and cohesive leadframe 10, two leadframe connections 11 and 12 are formed, which are initially held together in a manner known per se by narrow connecting webs but are isolated from one another in the course of the production process by separation of these connecting webs.
  • On one leadframe connection 12, a completely processed semiconductor LED 1 having an electrically conductive connecting means, such as conductive silver or the like, is adhesively bonded or soldered on the inside end section of the leadframe connection, so that the n-side or p-side of the semiconductor LED 1 is connected to the leadframe terminal 12. The opposite p-conducting or n-conducting contact side is connected by a bond wire 2 to the end section of the other leadframe connection 11.
  • The component is surrounded by a plastics compression molding material 3, into which a conversion material 4 in the form of phosphor particles can preferably be introduced. This will be explained in more detail below.
  • In the illustrated component, the mounting surface is parallel to the plane of the section. The leadframe 10 is flat throughout and is approximately perpendicular to the mounting surface so that the second predetermined angle is about 90° within the manufacturing tolerances.
  • This design permits both economical manufacture of the leadframe, for example by punching out of a metal sheet or of a foil without additional bends, and a very small space requirement of the component. The emission takes place predominantly perpendicular to the leadframe 10, so that a main emission direction 7 is approximately parallel to the mounting surface, and the first predetermined angle is O° within the manufacturing tolerances.
  • FIG. 2 shows a schematic sectional view of a further embodiment of a component according to the invention. The plane of the section is once again along a longitudinal axis of the leadframe 10. and is oriented perpendicular to the plane of the section chosen in FIG. 1.
  • Here, the leadframe 10 has lateral recesses 5. These recesses 5 are filled with the surrounding plastics compression molding material, thus forming a type of toothed system between the leadframe 10 and the covering. This toothed system ensures mechanically stable anchoring of the leadframe in the covering. For this purpose, it would also be possible to form non-illustrated passages in the leadframe 10.
  • The leadframe connections 11, 12 project, in a main extension direction of the mounting plane 13 determined by the mounting surface 6, out of the covering of the component and extend, a distance away from the covering, in the direction of the mounting plane 13. A small gap which is bridged during contacting, for example by solder contacts, is formed between the mounting plane 13 and the leadframe connections 11, 12. Advantageously, the positioning of the component is thus determined solely by the mounting surface 6, with the result that mechanical stresses between leadframe 10 and covering are avoided. Furthermore, the slight distance of the leadframe connections 11, 12 from the mounting plane 13 reduces the risk that the leadframe connections 11, 12, which project beyond the mounting plane 13, for example owing to manufacturing tolerances in the encapsulation with molding material, lead to bending of the leadframe connections 11, 12 or tilting of the component during mounting.
  • FIG. 3 shows a perspective view of a further embodiment of a component according to the invention on a support 8, for example a circuit board. The emission takes place substantially parallel to the main surface of the support, on which the component rests with the mounting surface 6. On either side of the leadframe connections, the component is bounded by inclined surfaces 9 a, 9 b which are tilted relative to one another and, as so-called demolding bevels, facilitate the separation of a mold from the component body during product ion.
  • In the emission direction 7, the component is bounded by a curved surface which is partly cylindrical in the case shown, the cylinder axis being oriented approximately parallel to the longitudinal axis of the leadframe. The curved surface may also be formed spherically as part of a sphere surface or aspherically. Furthermore, both a convex surface and a concave surface are possible.
  • As a result of this shape, a lens effect and hence focusing of the emitted radiation are achieved.
  • In the embodiment, the semiconductor LED 1 has an emission spectrum which is in the ultraviolet or blue spectral range. For the production of mixed-color or white light, an emission of the semiconductor LED in the ultraviolet or blue spectral range is particularly advantageous since conversion to longer wavelengths is as a rule substantially more efficient than a conversion from longer to shorter wavelengths. Since the ultraviolet or blue spectral range is at the short wave end of the optically visible range, efficient conversion to a majority of the visible wavelengths is possible from there by means of suitable conversion materials.
  • The semiconductor LED 1 is preferably based on GaN, InGaN, AlGaN or AlInGaN. However, it may alternatively also be based on the material system ZnS/ZnSe or on another material system suitable for this spectral range.
  • In contrast to the embodiments described so far, the embodiment of a component according to the invention, shown in FIG. 4, is provided with a main emission direction 7 arranged perpendicular to the mounting plane 6. The first predetermined angle here is about 90°. The leadframe 10 has two S-shaped bends, the leadframe connections projecting laterally from the molding material 3, and the connection surfaces of the leadframe connections being in the mounting plane 13 determined by the mounting surface 6. The second predetermined angle here is thus O°.
  • A radiation-emitting chip 1 in the form of a semiconductor LED is fastened, for example soldered or adhesively bonded by an electrically conductive bond, on one part of the two-part leadframe 10. A wire connection 2 is led to the other part of the leadframe. As in the other embodiments, leadframe 10 and semiconductor LED are surrounded by a radiation-permeable molding material comprising conversion material.
  • In an embodiment of the production method according to the invention, after mounting and contacting of the semiconductor LED 1, a transparent plastics compression molding material 3 is injection-molded onto the leadframe connections 11 and 12 in a suitable injection-molding apparatus.
  • Preferably, the leadframe with the semiconductor LED is surrounded with the plastics compression molding material by molding by means of an injection molding or injection compression molding process. For this purpose, a subregion of the leadframe 10 with premounted semiconductor LED 1 is introduced into an injection mold, and the plastics injection molding material 3 is liquefied and is injected into the injection mold. It is advantageous to preheat the leadframe (10) prior to the injection molding.
  • In a variant of this process, a multiplicity of leadframes, each having radiation-emitting chips mounted thereon, can also be encapsulated in a cohesive covering and subsequently divided into individual components, for example by breaking, sawing or a laser cutting method by means of a water jet.
  • Phosphor particles which consist of a phosphor by means of which at least partial wavelength conversion of the light radiation emitted by the semiconductor LED 1 is brought about are embedded as conversion material 4 in this plastics compression molding material 3. This wavelength conversion produces an emission spectrum which gives the optical impression of multi-colored light or white light.
  • The prefabrication of the leadframe 10 and the surrounding by injection molding with the molding material consisting of the plastics compression molding material 3, the phosphor particles 4 and optionally further fillers are effected in such a way that the leadframe sections 11 and 12 are led horizontally out of the molding material.
  • The finished component can be soldered to a circuit board at the connection surfaces of the leadframe connections 11 and 12, which connection surfaces are perpendicular to the mounting surface. A component suitable for SMT (surface mounting technology) is thus produced.
  • The preparation of the molding material formed by the plastics compression molding material 3, the phosphor particles 4 and 10 optionally further fillers is described in more detail below.
  • Prereacted, storage-stable and radiation-stable transparent compression molding materials which comprise commercial epoxy-cresol novolaks with phenolic curing agents and whose total chlorine content is below 1500 ppm can be used as starting materials for the plastics compression molding material. Preferably, these compression molding materials contain an internal mold release agent or lubricant, which facilitates the removal of the cured molding material from the injection mold. The presence of such an internal mold release agent is, however, not absolutely essential. For example, the following commercially available compression molding materials from Nitto and Sumitomo may therefore be used:
  • Nitto NT-600 (without internal mold release agent)
  • Nitto NT-300H-10.000 (with internal mold release agent)
  • Nitto NT.300S-10.000 (with internal mold release agent)
  • Nitto NT 360-10.000 (with internal mold release agent)
  • Sumitomo EME 700L (without internal mold release agent)
  • These compression molding materials are supplied as standard in rod or tablet form.
  • The use of compression molding materials in rod or tablet form facilitates the metering and increases the accuracy thereof compared with a compression molding material present in powder form. However, a compression molding material present in the form of a powder or in another modification can of course also be used in the invention. Furthermore, a compression molding material present in the form of a powder could also first be brought into rod or tablet form for more exact metering and then be further processed.
  • All phosphors which are described in the above-mentioned international publications WO 97/50132 and WO 98/12757 may be present as conversion materials. In particular, an inorganic luminescent pigment powder comprising phosphors having the general formula A3B5X12:M can be used. These are, for example, garnets doped with rare earths, in particular Ce.
  • Compounds that satisfy the formula A′3B′5O12:M′ have proven to be efficient phosphors (provided that they are not unstable under the customary production and operating conditions). Therein, A′ is at least one element from the group consisting of Y, Lu, Sc, La, Gd, Tb and Sm; B′ is at least one element from the group consisting of Al, Ga and In; and M′ is at least one element from the group consisting of Ce and Pr, preferably Ce. The compounds YAG:Ce (Y3Al5O12:Ce), TAG:Ce (Tb3Al5O12:Ce), TbYAG:Ce ((TbxY1−x)3 Al5O12:Ce, 0≦x≦1), GdYAG:Ce ((GdxY1−x)3Al5O12:Ce3+, 0≦x≦1) and GdTbYAG:Ce ((GdxTbyY1−x−y)3Al5O12:Ce3+, 0≦x≦1, 0≦y≦1) and mixtures based thereon have proven to be particularly efficient phosphors. Al can be at least partly replaced by Ga or In. Said phosphors are to be understood by way of example and not as restricting the general formula A3B5X12:M.
  • The compounds SrS:Ce3+, Na, SrS:ce3+, Cl, SrS:CeCl3, CaS:Ce3+ and SrS:Ce3+ are furthermore suitable as a phosphor. Moreover, sulfide- and oxysulfide-based host lattices and aluminates, borates, alkaline earth metal sulfides, thiogallates or orthosilicates, etc. having metal centers appropriately excitable in the short-wave range or organometallic phosphor systems can also be used. Furthermore, soluble or sparingly soluble organic dyes and phosphor mixtures can be used.
  • Regarding the particle size of the phosphor particles, a mean particle diameter between 2 μm and 20 μm, preferably approximately between 4 μm and 10 μm, particularly preferably between 5 μm and 6 μm, is advantageous. The conversion properties can be further improved by removing the dust fraction, i.e. for example particles having a particle diameter of less than 2 μm, preferably less than 1 μm, from the phosphor powder. With decreasing particle diameter, the scatter of the radiation at the particles increases and the conversion efficiency decreases, so that it is advantageous to separate off the phosphor particles having a comparatively small particle diameter.
  • Thus, for example, experiments have shown that milling the phosphor, which produces a particle size d50 of substantially less than 5 μm, results in a volume fraction of up to 30% of particles having a particle size less than 1 μm. Regardless of the difference in refractive index compared with the surrounding matrix, for example a plastics matrix, particles having a size of less than 1 μm lead to strong light scattering and thus adversely affect the transmission and the transparency of the matrix.
  • According to simulation calculations, the pure transmission at a wavelength of 500 nm in the case of a typical plastics matrix having a thickness of 400 μm and a phosphor concentration of 3.5% by weight with a mean phosphor particle size of 2 μm is an order of magnitude of 1,000 greater than for a particle size of 1 μm and further increases sharply with increasing particle size. For shorter wavelengths, particle sizes of 1 μm or less have a greater effect.
  • In particular, particles of the luminescent pigment YAG:Ce are distinguished by particular conversion efficiency. A conversion material based thereon is known by the product designation L175 from Osram of Germany. An experiment on mixing with a compression molding material was carried out with this conversion material, a compression molding material of the type Nitto NT-300 H1O.OOO with an internal mold release agent being used. As preparation for the experiment, the conversion material L175 was predried at 200° C. for about 8 h. Thereafter, a surface modifier having the designation diethylene glycol monomethyl ether was mixed in liquid form with the predried converter (0.1% by weight, based on weight of compression molding material). This mixture was sealed airtight in a glass vessel and left to stand overnight. Directly before processing, the conversion material was mixed with the compression molding material of the abovementioned type. The compression molding material had been milled beforehand in a mill (for example a ball mill) in powder form. The mixing ratio was 20% by weight of conversion material/DEGME mixture and 80% by weight of Nitto NT 300H-10.000. After the coarse mixing of the mixture by stirring, the mixture was thoroughly mixed and milled again in a mill (for example a ball mill) and very fine powder was thus produced.
  • An injection molding experiment was then carried out with this molding material on the apparatus of the type FICO Brilliant 100. The already appropriately prefabricated leadframes 10 were preheated at 150° C. prior to the injection molding, and the following machine parameters were set for the injection molding:
      • mold temp: 150° C.
      • injection time: 22.4 s
      • injection pressure: 73-82 bar (depending, inter alia, on the amount of material set)
      • curing time: 120 s
  • As a result, it was possible to achieve a very homogeneous, cured molding material which was distinguished by excellent freedom from bubbles and shrink holes. In general, it was found that milling of the compression molding material to very fine powder prior to mixing gave better results with regard to freedom from bubbles and shrink holes than with the use of a coarser-particled residual material powder.
  • In addition, an adhesion promoter, such as 3-glycidyloxy-propyltrimethoxysilane, for example having the product designation A-187 from Hüls AG, can also be used. This adhesion promoter can be added to the phosphor in concentrations of up to 3% by weight directly after the drying process and can be mixed therewith overnight at room temperature.
  • According to an embodiment, the method according to the invention has been described on the basis of an SMD (surfacemounted design), but it can also be realized in the case of a so-called radial diode.
  • The explanation of the invention with reference to the embodiments described does not of course represent any restriction of the invention to these embodiments. In particular, individual features of the embodiments can also be combined in a form other than the form described. Likewise, production processes described are not restricted to surfacemountable components, laterally emitting components or components which contain a conversion material.

Claims (43)

1. A method for producing a surface-mountable, radiation-emitting component, the method which comprises the following steps:
mounting a radiation-emitting chip on a leadframe;
preparing a molding material from a resin powder prereacted with curing agent, and optionally added further fillers; and
encasing the leadframe and the radiation-emitting chip with the molding material.
2. The method according to claim 1, wherein the step of preparing the molding material comprises:
mixing a resin powder, prereacted with curing agent, with a conversion material and, optionally, further fillers; and
blending the mixture to provide a homogeneous powder mixture.
3. The method according to claim 2, wherein the molding material is a plastics compression molding material.
4. The method according to claim 1, which comprises encasing the radiation-emitting chip such that light exit sides of the chip are surrounded by the molding material.
5. The method according to claim 1, wherein the prereacted resin powder consists of epoxy novolak or epoxy-cresol novolak.
6. The method according to claim 5, which comprises utilizing epoxy resin prereacted with at least one of a phenol curing agent and an anhydride curing agent.
7. The method according to claim 1, wherein the conversion material is a luminescent pigment powder containing at least one inorganic phosphor having a phosphor metal center M in a host lattice based on the general formula A3B5X12.
8. The method according to claim 7, wherein the phosphor is YAG:Ce, TAG:Ce, TbYAG:Ce, GdYAG:Ce, GdTbYAG:Ce or a mixture formed therefrom.
9. The method according to claim 1, wherein the conversion material is a luminescent pigment powder containing at a metal center M in a sulfide, oxysulfide, borate, aluminate or metal chelate complex.
10. The method according to claim 1, which comprises pre-drying the luminescent pigment powder before mixing with the resin powder.
11. The method according to claim 1, which comprises providing a resin initially in rod or tablet form, and milling the resin to provide the resin powder.
12. The method according to claim 1, which comprises providing a resin initially in rod or tablet form and milling the resin, prior to mixing with the conversion material, to provide the resin powder.
13. The method according to claim 1, which comprises mixing the resin powder or the resin and the conversion material, and optionally the further fillers, by first mixing the components coarsely and then milling the mixture in a mill to form a very fine, homogeneous powder.
14. The method according to claim 13, which comprises milling the mixture in a ball mill.
15. The method according to claim 1, which comprises milling the resin or the resin powder in a mill prior to mixing with the conversion material, and optional further fillers.
16. The method according to claim 15, which comprises milling the resin or the resin powder in a coffee grinder.
17. The method according to claim 1, which comprises mixing an adhesion promoter with the conversion material.
18. The method according to claim 1, which comprises mixing an adhesion promoter with the resin powder.
19. The method according to claim 18, which comprises mixing the adhesion promoter in liquid form with the conversion material.
20. The method according to claim 18, wherein the adhesion promoter is one of glycidyloxy-propyltrimethoxysilane and further derivatives based on trialkoxysilane.
21. The method according to claim 1, which comprises mixing a wetting agent with the conversion material, for improving a wettability of surfaces of the conversion material
22. The method according to claim 1, which comprises adding at least one monofunctional and polyfunctional polar agent which has carboxyl, carboxylic ester, ether and alcohol groups and improves the wettability of the surfaces of the conversion material for modifying surfaces of the conversion material.
23. The method according to claim 1, which comprises admixing a mold release agent or lubricant.
24. The method according to claim 23, which comprises admixing the mold release agent or lubricant with the resin powder or prior to mixing with the conversion material.
25. The method according to claim 23, wherein the mold release agent is a solid wax-based mold release agent or a metal soap with long-chain carboxylic acids.
26. The method according to claim 25, wherein the mold release agent is a stearate.
27. The method according to claim 1, which comprises admixing inorganic fillers for increasing a refractive index of the plastics compression molding material.
28. The method according to claim 27, which comprises admixing fillers comprising oxides selected from the group consisting of TiO2, ZrO2, α-Al2O3, and other metal oxides.
29. The method according to claim 1, which comprises mixing glass particles with the molding material as filler.
30. The method according to claim 29, which comprises admixing glass particles having a mean particle size less than 100 μm.
31. The method according to claim 29, which comprises admixing glass particles having a mean particle size less than 50 μm.
32. The method according to claim 29, wherein a proportion of the glass particles in the molding material lies between 0% by weight and 90% by weight.
33. The method according to claim 29, wherein a proportion of the glass particles in the molding material lies between 10% by weight and 50% by weight.
34. The method according to claim 1, which comprises admixing an antioxidant.
35. The method according to claim 34, wherein the antioxidant is based on one of phosphite and sterically hindered phenols.
36. The method according to claim 1, which comprises admixing a UV light stabilizer.
37. The method according to claim 1, which comprises providing a molding material with the following constituents:
resin powder ≧60%
conversion material ≧0% and ≦40%
adhesion promoter ≧0% and ≦3%
mold release agent ≧0% and ≦2%
surface modifier ≧0% and ≦5%
antioxidant ≧0% and ≦5%
UV light stabilizer ≧0% and ≦2%
glass particles ≧0% and ≦80%.
38. The method according to claim 37, which comprises adjusting the conversion material in the molding material to >10% and ≦25%.
39. The method according to claim 1, wherein the step of encasing the leadframe comprises injection molding or injection compression molding.
40. The method according to claim 39, which comprises mounting the radiation-emitting chip on a leadframe, introducing the radiation-emitting chip and a portion of the leadframe into an injection mold, liquefying the molding material, and injecting the molding material into the injection mold.
41. The method according to claim 39, which comprises preheating the leadframe prior to the encasing step.
42. The method according to claim 1, wherein the encasing step comprises encapsulating a plurality of leadframes, each having at least one radiation-emitting chip mounted thereon, with a cohesive covering and subsequently dividing into individual components.
43. The method according to claim 42, wherein the dividing step comprises a process selected from the group consisting of breaking, sawing, laser cracking, or water jet sawing.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080197376A1 (en) * 2005-02-28 2008-08-21 Braune Bert Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component
US20130001597A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Lighting Device Having a Color Tunable Wavelength Converter
US10340426B2 (en) * 2017-07-06 2019-07-02 Epistar Corporation Phosphor and illumination device utilizing the same

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101148332B1 (en) 2003-04-30 2012-05-25 크리, 인코포레이티드 High powered light emitter packages with compact optics
DE10326755A1 (en) * 2003-06-13 2006-01-26 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Discharge lamp with dual band phosphor
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
JP2005026302A (en) * 2003-06-30 2005-01-27 Shin Etsu Handotai Co Ltd Luminescent module
DE102004001312B4 (en) * 2003-07-25 2010-09-30 Seoul Semiconductor Co., Ltd. Chip light-emitting diode and method for its production
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4370158B2 (en) 2003-12-24 2009-11-25 シャープ株式会社 Optical coupler and electronic device using the same
DE10361801A1 (en) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Radiation emitting and/or radiation receiving semiconductor element with a semiconductor chip useful in LED technology, and in reaction-flow processes and surface mounting technology (SMT)
JP4181515B2 (en) * 2004-02-25 2008-11-19 シャープ株式会社 Optical semiconductor device and electronic device using the same
US7488990B2 (en) * 2004-04-02 2009-02-10 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Using multiple types of phosphor in combination with a light emitting device
US7348220B2 (en) * 2004-04-30 2008-03-25 Sumitomo Bakelite Co., Ltd. Resin-encapsulated type semiconductor packages, and production method and apparatus therefor
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006024645A (en) * 2004-07-06 2006-01-26 Rohm Co Ltd Semiconductor light emitting device
JP4348267B2 (en) * 2004-09-22 2009-10-21 シャープ株式会社 Optical semiconductor device, optical communication device, and electronic equipment
US20060061261A1 (en) * 2004-09-22 2006-03-23 Kun-Chui Lee White light emitting device
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
CN100382342C (en) * 2004-11-09 2008-04-16 金利精密工业股份有限公司 Light-emitting diode support and producing method thereof
US7501659B2 (en) * 2005-04-12 2009-03-10 Japan Cash Machine Co., Ltd. LED device and optical detector therewith for bill validator
CN100403563C (en) * 2005-04-18 2008-07-16 光宝科技股份有限公司 LED with white light and fluorescent powder concerned and preparation thereof
CN100485893C (en) * 2005-09-09 2009-05-06 鸿富锦精密工业（深圳）有限公司 Producing process for video sensing chip packaging and structure
JP2007165811A (en) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd Light emitting device
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US7675145B2 (en) * 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
KR100904152B1 (en) * 2006-06-30 2009-06-25 서울반도체 주식회사 Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method
CN101554089A (en) * 2006-08-23 2009-10-07 科锐Led照明科技公司 Lighting device and lighting method
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
EP2095011A1 (en) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
CN101622493A (en) 2006-12-04 2010-01-06 科锐Led照明科技公司 Lighting device and lighting method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP5122172B2 (en) * 2007-03-30 2013-01-16 ローム株式会社 Semiconductor light emitting device
WO2009012287A1 (en) 2007-07-17 2009-01-22 Cree Led Lighting Solutions, Inc. Optical elements with internal optical features and methods of fabricating same
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
WO2009031618A1 (en) * 2007-09-06 2009-03-12 Nikon Corporation Light-emitting diode device and method for manufacturing the same
TWI492412B (en) * 2007-09-07 2015-07-11 Cree Inc Wafer level phosphor coating method and devices fabricated utilizing method
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
JP2011512037A (en) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド System and method for emitter layer shaping
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
US8368112B2 (en) * 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
TWI483418B (en) * 2009-04-09 2015-05-01 Lextar Electronics Corp Packaging process of a light emitting diode
TWI370216B (en) * 2009-06-29 2012-08-11 Lextar Electronics Corp Led lighting device
JP5496570B2 (en) 2009-08-05 2014-05-21 シャープ株式会社 Light emitting device
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
JP5347953B2 (en) * 2009-12-28 2013-11-20 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP5052630B2 (en) * 2010-01-29 2012-10-17 株式会社東芝 Surface mount diode and method for manufacturing the same
JP5383611B2 (en) * 2010-01-29 2014-01-08 株式会社東芝 LED package
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP6009471B2 (en) 2011-03-08 2016-10-19 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Luminescence products, light sources and lighting fixtures
JP5545601B2 (en) * 2011-11-07 2014-07-09 信越化学工業株式会社 Phosphor highly-filled wavelength conversion sheet, method for manufacturing light-emitting semiconductor device using the same, and light-emitting semiconductor device
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
US9391050B2 (en) * 2012-02-02 2016-07-12 Citizen Holdings Co., Ltd. Semiconductor light emitting device and fabrication method for same
DE102012201616A1 (en) * 2012-02-03 2013-08-08 Tridonic Jennersdorf Gmbh Plastic carrier for use with lead frame for light emitting diode chip of light emitting diode module, has mechanical connection for mounting optical elements, and insulation displacement contact for contacting light emitting diode chips
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
DE102012207566A1 (en) * 2012-05-07 2013-11-07 Osram Gmbh Lighting device e.g. floor lamp has upper layer and bottom layer that are attached over specific side of semiconductor light source in light radiation pattern
DE102012207563A1 (en) * 2012-05-07 2013-11-07 Osram Gmbh Lamp device i.e. incandescent lamp retrofitlamp, for illuminating room, has plate-like lamp modules including semiconductor light sources, and curved printed circuit board accommodated between upper and lower layers of multi-layer retainer
JP5431536B2 (en) * 2012-06-21 2014-03-05 ローム株式会社 Semiconductor light emitting device
KR101886157B1 (en) 2012-08-23 2018-08-08 엘지이노텍 주식회사 Light emitting deviceand lighting system
US8890196B2 (en) * 2013-03-14 2014-11-18 Goldeneye, Inc. Lightweight self-cooling light sources
KR102135352B1 (en) * 2013-08-20 2020-07-17 엘지전자 주식회사 Display
JP5646708B2 (en) * 2013-08-22 2014-12-24 ローム株式会社 Semiconductor device
JP5646784B2 (en) * 2014-06-13 2014-12-24 ローム株式会社 Semiconductor light emitting device
JP5689558B2 (en) * 2014-08-28 2015-03-25 ローム株式会社 Semiconductor light emitting device
JP5878226B2 (en) * 2014-11-19 2016-03-08 ローム株式会社 Semiconductor light emitting device
CN108540086A (en) * 2018-01-18 2018-09-14 浙江人和光伏科技有限公司 A kind of conductive module of solar battery connecting box

Citations (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935501A (en) * 1975-02-13 1976-01-27 Digital Components Corporation Micro-miniature light source assemblage and mounting means therefor
US4160308A (en) * 1976-02-02 1979-07-10 Fairchild Camera And Instrument Corporation Optically coupled isolator device and method of making same
US4287105A (en) * 1980-01-14 1981-09-01 Plaskon Products, Inc. Flash resistant epoxy encapsulating composition and process for preparing same
US4334035A (en) * 1981-03-19 1982-06-08 Mitsubishi Petrochemical Co., Ltd. Unsaturated polyester resin composition
US4412135A (en) * 1979-03-23 1983-10-25 Sharp Kabushiki Kaisha Photo coupler device molding including filler particles
US4712017A (en) * 1984-10-16 1987-12-08 Kabushiki Kaisha Toshiba Photocoupler device having reflecting surface enhance signal transmission
US4872765A (en) * 1983-04-20 1989-10-10 The United States Of America As Represented By The Secretary Of The Army Dual mode quartz thermometric sensing device
US5035483A (en) * 1989-05-31 1991-07-30 Siemens Aktiengesellschaft Surface-mountable opto-component
US5107327A (en) * 1990-07-16 1992-04-21 Nitto Denko Corporation Photosemiconductor device and epoxy resin composition for use in molding photosemiconductor
US5137940A (en) * 1989-02-09 1992-08-11 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin compositions
US5145889A (en) * 1988-12-23 1992-09-08 Kabushiki Kaisha Toshiba Acid anhydride-cured epoxy resin encapsulant with triorganothiophosphite
US5436492A (en) * 1992-06-23 1995-07-25 Sony Corporation Charge-coupled device image sensor
US5530566A (en) * 1992-09-24 1996-06-25 Kent State University Polymer dispersed ferroelectric smectic liquid crystal formed by inducing a force during phase separation
US5635327A (en) * 1992-12-28 1997-06-03 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor and process for preparing the same
US5682066A (en) * 1996-08-12 1997-10-28 Motorola, Inc. Microelectronic assembly including a transparent encapsulant
US5770867A (en) * 1995-02-14 1998-06-23 Sharp Kabushiki Kaisha Photocoupler device with light-transmissive resin including fillers and a producing process thereof
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US5792822A (en) * 1994-06-24 1998-08-11 Seiko Epson Corporation Transparent plastic material, optical article based on the material, and production method thereof
US5906459A (en) * 1996-06-20 1999-05-25 Societe Nationale D'etude Et De Construction De Moteurs D'aviation "Snecma" Laser-assisted milling process
US5942770A (en) * 1997-04-14 1999-08-24 Rohm, Co., Ltd. Light-emitting diode chip component and a light-emitting device
US5981979A (en) * 1996-11-29 1999-11-09 Siemens Aktiengesellschaft Radiation-emitting semiconductor component
US6025067A (en) * 1995-03-08 2000-02-15 Fay; John Nicholas Soft elastomeric composite composition
US6051848A (en) * 1998-03-02 2000-04-18 Motorola, Inc. Optical device packages containing an optical transmitter die
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
US6060729A (en) * 1997-11-26 2000-05-09 Rohm Co., Ltd. Light-emitting device
US6066861A (en) * 1996-09-20 2000-05-23 Siemens Aktiengesellschaft Wavelength-converting casting composition and its use
US6197416B1 (en) * 1998-09-17 2001-03-06 Eastman Kodak Company Transmission imaging display material with biaxially oriented polyolefin sheet
US6197413B1 (en) * 1997-07-04 2001-03-06 L'oreal Article made of plastics material, a method of manufacture, and a molding composition
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
US20020028527A1 (en) * 1999-01-11 2002-03-07 Toshihide Maeda Composite light-emitting device, semicon ductor light-emitting unit and method for fabricating the unit
US6376902B1 (en) * 1997-07-29 2002-04-23 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelectronic structural element
US20020072137A1 (en) * 2000-12-09 2002-06-13 Ih Teng Yul Optosemiconductor device and the method for its manufacture
US20020097579A1 (en) * 2001-01-24 2002-07-25 Stalions Drake Charles Semiconductor light emitting device
US6432745B1 (en) * 1993-09-30 2002-08-13 Siemens Aktiengesellschaft Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US20020158565A1 (en) * 2001-04-27 2002-10-31 Setlur Anant Achyut Phosphor blends for generating white light from near-UV/blue light-emitting devices
US6476930B1 (en) * 1998-12-04 2002-11-05 Ricoh Corporation Output processing and merging of hybrid electronic documents
US20020195935A1 (en) * 1999-12-30 2002-12-26 Harald Jager Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
US6555958B1 (en) * 2000-05-15 2003-04-29 General Electric Company Phosphor for down converting ultraviolet light of LEDs to blue-green light
US6576930B2 (en) * 1996-06-26 2003-06-10 Osram Opto Semiconductors Gmbh Light-radiating semiconductor component with a luminescence conversion element
US20030156424A1 (en) * 2001-09-26 2003-08-21 Grutze Glen A. Gobo projector for a vehicle
US20030168670A1 (en) * 1999-03-15 2003-09-11 Roberts John K. Method of making radiation emitter devices
US20030168720A1 (en) * 2002-03-06 2003-09-11 Nichia Corporation Semiconductor device and manufacturing method for same
US6624491B2 (en) * 1998-06-30 2003-09-23 Osram Opto Semiconductors Gmbh & Co. Diode housing
US20040026709A1 (en) * 2000-04-26 2004-02-12 Stefan Bader Gan-based light emitting-diode chip and a method for producing a luminescent diode component
US20040046242A1 (en) * 2002-09-05 2004-03-11 Hideo Asakawa Semiconductor device and an optical device using the semiconductor device
US20040075100A1 (en) * 2001-04-10 2004-04-22 Georg Bogner Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component
US20040084681A1 (en) * 1998-09-04 2004-05-06 Roberts John K. Radiation emitter device having an integral micro-groove lens
US20040094757A1 (en) * 2002-05-06 2004-05-20 Bert Braune Light emitting diode with wavelength conversion
US20040124758A1 (en) * 2000-07-28 2004-07-01 Osram Opto Semiconductors Gmbh Luminescene conversion based light emitting diode and phosphors for wave length conversion
US6800373B2 (en) * 2002-10-07 2004-10-05 General Electric Company Epoxy resin compositions, solid state devices encapsulated therewith and method
US6809471B2 (en) * 2002-06-28 2004-10-26 General Electric Company Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same
US20040257797A1 (en) * 2003-06-18 2004-12-23 Yoshinobu Suehiro Light emitting device
US6888864B1 (en) * 1999-09-24 2005-05-03 Sharp Kabushiki Kaisha Semiconductor laser device, optical transmission device, optical transmission system, electronic device, control device, connector, communication device, and optical transmission method and data transmission and reception method
US6900511B2 (en) * 2002-06-28 2005-05-31 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US6906459B2 (en) * 1999-12-28 2005-06-14 Toyoda Gosei Co., Ltd. Light emitting diode
US20050162069A1 (en) * 2000-12-28 2005-07-28 Toyoda Gosei Co., Ltd. Light emitting device
US20050245018A1 (en) * 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169281A (en) * 1981-04-10 1982-10-18 Mitsubishi Electric Corp Semiconductor device
JPH0429580Y2 (en) * 1986-02-28 1992-07-17
US4672765A (en) * 1986-05-23 1987-06-16 Lutz Erno B Illuminated fish attraction device
DE3804293A1 (en) 1988-02-12 1989-08-24 Philips Patentverwaltung Arrangement containing an electroluminescent or laser diode
JPH03270083A (en) * 1990-03-19 1991-12-02 Hitachi Ltd Light emitting diode package
JPH0665473A (en) * 1992-08-19 1994-03-08 Denki Kagaku Kogyo Kk Filler for optically functional element sealing resin and resin composition using the same
JPH06204569A (en) * 1992-12-28 1994-07-22 Casio Comput Co Ltd Structure of light-emitting diode
JP3308078B2 (en) * 1993-12-14 2002-07-29 ローム株式会社 Resin-sealed semiconductor device
JPH08176407A (en) 1994-12-22 1996-07-09 Sumitomo Bakelite Co Ltd Epoxy resin composition
JP2913577B2 (en) * 1995-04-13 1999-06-28 サンケン電気株式会社 Resin-sealed semiconductor light emitting device
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
DE19803936A1 (en) 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Expansion-compensated optoelectronic semiconductor component, in particular UV-emitting light-emitting diode and method for its production
JP3908383B2 (en) * 1998-05-29 2007-04-25 ローム株式会社 Semiconductor device
JPH11346005A (en) * 1998-05-29 1999-12-14 Rohm Co Ltd Optical semiconductor device
JP2907286B1 (en) * 1998-06-26 1999-06-21 サンケン電気株式会社 Resin-sealed semiconductor light emitting device having fluorescent cover
JP2000077720A (en) * 1998-08-31 2000-03-14 Sanyo Electric Co Ltd Optical semiconductor device

Patent Citations (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935501A (en) * 1975-02-13 1976-01-27 Digital Components Corporation Micro-miniature light source assemblage and mounting means therefor
US4160308A (en) * 1976-02-02 1979-07-10 Fairchild Camera And Instrument Corporation Optically coupled isolator device and method of making same
US4412135A (en) * 1979-03-23 1983-10-25 Sharp Kabushiki Kaisha Photo coupler device molding including filler particles
US4287105A (en) * 1980-01-14 1981-09-01 Plaskon Products, Inc. Flash resistant epoxy encapsulating composition and process for preparing same
US4334035A (en) * 1981-03-19 1982-06-08 Mitsubishi Petrochemical Co., Ltd. Unsaturated polyester resin composition
US4872765A (en) * 1983-04-20 1989-10-10 The United States Of America As Represented By The Secretary Of The Army Dual mode quartz thermometric sensing device
US4712017A (en) * 1984-10-16 1987-12-08 Kabushiki Kaisha Toshiba Photocoupler device having reflecting surface enhance signal transmission
US5145889A (en) * 1988-12-23 1992-09-08 Kabushiki Kaisha Toshiba Acid anhydride-cured epoxy resin encapsulant with triorganothiophosphite
US5137940A (en) * 1989-02-09 1992-08-11 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin compositions
US5035483A (en) * 1989-05-31 1991-07-30 Siemens Aktiengesellschaft Surface-mountable opto-component
US5107327A (en) * 1990-07-16 1992-04-21 Nitto Denko Corporation Photosemiconductor device and epoxy resin composition for use in molding photosemiconductor
US5436492A (en) * 1992-06-23 1995-07-25 Sony Corporation Charge-coupled device image sensor
US5530566A (en) * 1992-09-24 1996-06-25 Kent State University Polymer dispersed ferroelectric smectic liquid crystal formed by inducing a force during phase separation
US5635327A (en) * 1992-12-28 1997-06-03 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor and process for preparing the same
US6432745B1 (en) * 1993-09-30 2002-08-13 Siemens Aktiengesellschaft Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US5792822A (en) * 1994-06-24 1998-08-11 Seiko Epson Corporation Transparent plastic material, optical article based on the material, and production method thereof
US5770867A (en) * 1995-02-14 1998-06-23 Sharp Kabushiki Kaisha Photocoupler device with light-transmissive resin including fillers and a producing process thereof
US6025067A (en) * 1995-03-08 2000-02-15 Fay; John Nicholas Soft elastomeric composite composition
US5906459A (en) * 1996-06-20 1999-05-25 Societe Nationale D'etude Et De Construction De Moteurs D'aviation "Snecma" Laser-assisted milling process
US6812500B2 (en) * 1996-06-26 2004-11-02 Osram Opto Semiconductors Gmbh & Co. Ohg. Light-radiating semiconductor component with a luminescence conversion element
US6576930B2 (en) * 1996-06-26 2003-06-10 Osram Opto Semiconductors Gmbh Light-radiating semiconductor component with a luminescence conversion element
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
US5682066A (en) * 1996-08-12 1997-10-28 Motorola, Inc. Microelectronic assembly including a transparent encapsulant
US6245259B1 (en) * 1996-09-20 2001-06-12 Osram Opto Semiconductors, Gmbh & Co. Ohg Wavelength-converting casting composition and light-emitting semiconductor component
US6066861A (en) * 1996-09-20 2000-05-23 Siemens Aktiengesellschaft Wavelength-converting casting composition and its use
US6277301B1 (en) * 1996-09-20 2001-08-21 Osram Opto Semiconductor, Gmbh & Co. Ohg Method of producing a wavelength-converting casting composition
US5981979A (en) * 1996-11-29 1999-11-09 Siemens Aktiengesellschaft Radiation-emitting semiconductor component
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
US5942770A (en) * 1997-04-14 1999-08-24 Rohm, Co., Ltd. Light-emitting diode chip component and a light-emitting device
US6197413B1 (en) * 1997-07-04 2001-03-06 L'oreal Article made of plastics material, a method of manufacture, and a molding composition
US6376902B1 (en) * 1997-07-29 2002-04-23 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelectronic structural element
US6060729A (en) * 1997-11-26 2000-05-09 Rohm Co., Ltd. Light-emitting device
US6051848A (en) * 1998-03-02 2000-04-18 Motorola, Inc. Optical device packages containing an optical transmitter die
US6624491B2 (en) * 1998-06-30 2003-09-23 Osram Opto Semiconductors Gmbh & Co. Diode housing
US20040084681A1 (en) * 1998-09-04 2004-05-06 Roberts John K. Radiation emitter device having an integral micro-groove lens
US6197416B1 (en) * 1998-09-17 2001-03-06 Eastman Kodak Company Transmission imaging display material with biaxially oriented polyolefin sheet
US6476930B1 (en) * 1998-12-04 2002-11-05 Ricoh Corporation Output processing and merging of hybrid electronic documents
US20020028527A1 (en) * 1999-01-11 2002-03-07 Toshihide Maeda Composite light-emitting device, semicon ductor light-emitting unit and method for fabricating the unit
US20050133810A1 (en) * 1999-03-15 2005-06-23 Roberts John K. Opto-electronic assembly having an encapsulant with at least two different functional zones
US20030168670A1 (en) * 1999-03-15 2003-09-11 Roberts John K. Method of making radiation emitter devices
US6888864B1 (en) * 1999-09-24 2005-05-03 Sharp Kabushiki Kaisha Semiconductor laser device, optical transmission device, optical transmission system, electronic device, control device, connector, communication device, and optical transmission method and data transmission and reception method
US6906459B2 (en) * 1999-12-28 2005-06-14 Toyoda Gosei Co., Ltd. Light emitting diode
US7098588B2 (en) * 1999-12-30 2006-08-29 Osram Opto Semiconductors Gmbh Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
US20020195935A1 (en) * 1999-12-30 2002-12-26 Harald Jager Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
US7534634B2 (en) * 1999-12-30 2009-05-19 Osram Gmbh Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
US20040026709A1 (en) * 2000-04-26 2004-02-12 Stefan Bader Gan-based light emitting-diode chip and a method for producing a luminescent diode component
US6555958B1 (en) * 2000-05-15 2003-04-29 General Electric Company Phosphor for down converting ultraviolet light of LEDs to blue-green light
US20040124758A1 (en) * 2000-07-28 2004-07-01 Osram Opto Semiconductors Gmbh Luminescene conversion based light emitting diode and phosphors for wave length conversion
US20020072137A1 (en) * 2000-12-09 2002-06-13 Ih Teng Yul Optosemiconductor device and the method for its manufacture
US20050162069A1 (en) * 2000-12-28 2005-07-28 Toyoda Gosei Co., Ltd. Light emitting device
US20020097579A1 (en) * 2001-01-24 2002-07-25 Stalions Drake Charles Semiconductor light emitting device
US20040075100A1 (en) * 2001-04-10 2004-04-22 Georg Bogner Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component
US20020158565A1 (en) * 2001-04-27 2002-10-31 Setlur Anant Achyut Phosphor blends for generating white light from near-UV/blue light-emitting devices
US20030156424A1 (en) * 2001-09-26 2003-08-21 Grutze Glen A. Gobo projector for a vehicle
US20050245018A1 (en) * 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component
US20030168720A1 (en) * 2002-03-06 2003-09-11 Nichia Corporation Semiconductor device and manufacturing method for same
US20040094757A1 (en) * 2002-05-06 2004-05-20 Bert Braune Light emitting diode with wavelength conversion
US6809471B2 (en) * 2002-06-28 2004-10-26 General Electric Company Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same
US6900511B2 (en) * 2002-06-28 2005-05-31 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US20040046242A1 (en) * 2002-09-05 2004-03-11 Hideo Asakawa Semiconductor device and an optical device using the semiconductor device
US6800373B2 (en) * 2002-10-07 2004-10-05 General Electric Company Epoxy resin compositions, solid state devices encapsulated therewith and method
US20040257797A1 (en) * 2003-06-18 2004-12-23 Yoshinobu Suehiro Light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080197376A1 (en) * 2005-02-28 2008-08-21 Braune Bert Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component
US8247263B2 (en) * 2005-02-28 2012-08-21 Osram Opto Semiconductors Gmbh Method for producing an optical, radiation-emitting component and optical, radiation-emitting component
US20130001597A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Lighting Device Having a Color Tunable Wavelength Converter
US10340426B2 (en) * 2017-07-06 2019-07-02 Epistar Corporation Phosphor and illumination device utilizing the same

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