US20080121950A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US20080121950A1
US20080121950A1 US11/771,340 US77134007A US2008121950A1 US 20080121950 A1 US20080121950 A1 US 20080121950A1 US 77134007 A US77134007 A US 77134007A US 2008121950 A1 US2008121950 A1 US 2008121950A1
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Prior art keywords
front surface
drain
source
silicide region
channel misfet
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US11/771,340
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Tadashi Yamaguchi
Keiichiro Kashihara
Tomonori Okudaira
Toshiaki Tsutsumi
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Renesas Technology Corp
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Renesas Technology Corp
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Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KASHIHARA, KEIICHIRO, OKUDAIRA, TOMONORI, TSUTSUMI, TOSHIAKI, YAMAGUCHI, TADASHI
Publication of US20080121950A1 publication Critical patent/US20080121950A1/en
Priority to US12/510,026 priority Critical patent/US8022445B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain

Definitions

  • This invention relates to the semiconductor device provided with n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) comprising the silicide region of nickel or a nickel alloy.
  • MISFET Metal Insulator Semiconductor Field Effect Transistor
  • n channel MISFET by which the silicide region of nickel or a nickel alloy was formed in the gate, the source, and the drain by the self-align process (SAlicide:Self Aligned silicide) is adopted.
  • Patent Reference 1 Japanese Unexamined Patent Publication No. 2005-150267
  • MISFET is formed in many cases on the main front surface of the (100) silicon substrate from which the plane direction of a main front surface constitutes a surface (100).
  • n channel MISFET it is common to arrange so that the direction (namely, channel length direction) which connects a source and a drain may become parallel to crystal orientation ⁇ 110>.
  • n channel MISFET it is because mobility will improve compared with the case of being parallel to other crystal orientation when a channel length direction is parallel to crystal orientation ⁇ 110>.
  • This invention was made in view of the above-mentioned situation, and even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, it aims at offering the semiconductor device in which OFF leakage current does not increase easily.
  • Invention according to claim 1 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface; wherein the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain; and a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation ⁇ 100> of the semiconductor substrate.
  • MISFET Metal Insulator Semiconductor Field Effect Transistor
  • Invention according to claim 2 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface; and an element isolation film which is in the main front surface and was formed in a region around the n channel MISFET; wherein the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain; a front surface of a portion which adjoins the source and the drain in a channel width direction of the n channel MISFET among the element isolation films falls rather than a front surface of the source and the drain; and a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation ⁇ 100> of the semiconductor substrate.
  • MISFET Metal Insulator Semiconductor Field Effect Transistor
  • Invention according to claim 6 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and a first and a second n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which were formed over the main front surface; wherein the first n channel MISFET includes a first source and a first drain which were formed in the main front surface, and a first silicide region which was formed in at least one front surface of the first source and the first drain and including nickel; the second n channel MISFET includes a second source and a second drain which were formed in the main front surface, and a second silicide region which was formed in at least one front surface of the second source and the second drain and including nickel; each channel length direction of the first and the second n channel MISFET is arranged so that it may become parallel to a crystal orientation ⁇ 100> of the semiconductor substrate; the first silicide region is NiSi 2 ; and the second silicide region is NiSi.
  • the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation ⁇ 100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation ⁇ 100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation ⁇ 100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation ⁇ 100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • the channel length direction of the first and second n channel MISFET is arranged so that it may become parallel to the crystal orientation ⁇ 100> of a semiconductor substrate.
  • the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • a first silicide region is NiSi 2 and a second silicide region is NiSi.
  • NiSi 2 Since it is hard to extend NiSi 2 in the direction of crystal orientation ⁇ 100>, it can use first n channel MISFET as an element for memories, for example, and can suppress the increase in OFF leakage current. On the other hand, rather than NiSi 2 , since NiSi is low resistance, it can use second n channel MISFET as an element for logic, for example, and can aim at speeding up of a logical circuit.
  • FIG. 1 is a top view showing the semiconductor substrate in which the semiconductor device concerning Embodiment 1 was formed;
  • FIG. 2 is a cross-sectional view showing the semiconductor device concerning Embodiment 1;
  • FIGS. 3 to 7 are drawings showing each step of the manufacturing method of the semiconductor device concerning Embodiment 1;
  • FIGS. 8 and 9 are drawings showing the effect of the semiconductor device concerning Embodiment 1;
  • FIG. 10 is a top view showing other semiconductor substrates in which the semiconductor device concerning Embodiment 1 was formed;
  • FIG. 11 is a cross-sectional view showing the semiconductor device concerning Embodiment 2;
  • FIG. 12 is a drawing showing the semiconductor device concerning Embodiment 3.
  • FIG. 13 is a top view when an n channel transistor is formed in the shape of an array
  • FIG. 14 is the perspective view seen from cutting plane line XIV-XIV in FIG. 13 ;
  • FIG. 15 is a cross-sectional view in cutting plane line XV-XV in FIG. 13 ;
  • FIG. 16 is a drawing explaining the case where a silicide region extends to a channel length direction, and a diving portion occurs;
  • FIG. 17 is a drawing showing the effect of the present invention.
  • FIG. 18 is the graph which compared the amount of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 110> of a substrate (110), and the amount of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 100> of a substrate (100).
  • This embodiment is a semiconductor device arranged so that the channel length direction of n channel MISFET by which the nickel silicide region was formed on the source and the drain may become parallel to the crystal orientation ⁇ 100> of a semiconductor substrate.
  • FIG. 1 is a drawing showing semiconductor substrate SB in which the semiconductor device concerning this embodiment was formed.
  • Semiconductor substrate SB is a silicon substrate which comprises a single-crystal wafer of silicon.
  • this semiconductor substrate SB has a main front surface whose plane direction is a (100) surface.
  • FIG. 1 shows the crystal orientation in each part with a crest parenthesis, triple digits, and an arrow. That is, the crystal orientation ⁇ 100> and ⁇ 110> within a wafer surface are adjusted and displayed.
  • the semiconductor device comprising the device of n channel transistor TR 1 and TR 2 , etc. which are n channel MIS(for example, MOS) FET (Metal Insulator(for example, Oxide) Semiconductor Field Effect Transistor) and the wiring which connects between these devices is formed.
  • Notch 1 a is formed in the direction of crystal orientation ⁇ 100> at semiconductor substrate SB.
  • channel length direction CH 1 between the source/drains of n channel transistor TR 1 and TR 2 is arranged so that each may become parallel to the crystal orientation within the main surface of semiconductor substrate SB ⁇ 100>.
  • Symbol S shown in n channel transistor TR 1 and TR 2 shows a source, symbol D shows a drain and symbol G shows a gate.
  • FIG. 2 is a drawing showing the section in cutting plane line II-II in FIG. 1 , and is a cross-sectional view showing the semiconductor device concerning this embodiment.
  • n channel transistor TR 1 includes the laminated structure of gate insulating film (for example, silicon oxide film) GI and gate electrode (for example, polysilicon film) GE formed on the main front surface of semiconductor substrate SB, and source SE and drain DE formed in the main front surface of semiconductor substrate SB.
  • N channel transistor TR 1 includes further silicide regions SCs and SCd which were formed in the front surface of a source and a drain and including nickel, and gate silicide region SCg which was formed on the surface of the gate electrode and including nickel.
  • Gate silicide region SCg is NiSi and silicide regions SCs and SCd are NiSi 2 .
  • first sidewall insulating film SW 1 Facing the side surface of the laminated structure of gate insulating film GI and gate electrode GE, and a part of front surface of source SE and drain DE, first sidewall insulating film SW 1 , such as a TEOS (Tetra Ethyl Oxy Silane) oxide film, is formed, respectively. Facing the side surface of the laminated structure of gate insulating film GI and gate electrode GE, and a part of front surface of source SE and drain DE via first sidewall insulating film SW 1 , second sidewall insulating film SW 2 , such as a silicon nitride film, is formed, respectively.
  • TEOS Tetra Ethyl Oxy Silane
  • Element isolation film IS such as a silicon oxide film, is formed in the region which is in the main front surface of semiconductor substrate SB and which is around n channel transistor TR 1 , i.e., the outside of source SE and drain DE.
  • FIG. 3-FIG . 7 are the drawings showing each step of the manufacturing method of the semiconductor device concerning an embodiment of the invention. Hereafter, the manufacturing method of the semiconductor device related to an embodiment of the invention using each drawing is explained.
  • n channel MISFET including the laminated structure of gate insulating film GI and gate electrode GE, first sidewall insulating film SW 1 , second sidewall insulating film SW 2 , LDD (Lightly Doped Drain) region SE 1 of a source, and LDD region DE 1 of a drain are formed using photolithography technology and etching technology, ion implantation technology, etc.
  • source SE 2 and drain DE 2 are formed as n type source region and an n type drain region, what is necessary is, for example, to form them by implanting As (arsenic) ion into semiconductor substrate SB under the conditions of 5-20 [keV], and 1 ⁇ 10 15 to 1>10 16 [cm ⁇ 2 ]] or to form them by implanting P (phosphorus) ion into semiconductor substrate SB under the conditions of 5-10 [keV], and 1 ⁇ 10 14 to 1 ⁇ 10 15 [cm ⁇ 2 ].
  • spike annealing extremely short-time rapid heating processing is meant, and it is made to go up to 900° C. ⁇ 1000° C.
  • silicidation preventing film BL for covering the portion which should prevent a silicidation among semiconductor substrates SB is formed. What is necessary is just to adopt the USG (Undoped Silicate Glass) film formed with 400 forming temperature by the CVD (Chemical Vapor Deposition) method as this silicidation preventing film BL.
  • USG Undoped Silicate Glass
  • CVD Chemical Vapor Deposition
  • anisotropic etching (dry etching) is selectively performed to silicidation preventing film BL using photolithography technology and etching technology. Silicidation preventing film BL is left into the portions (for example, portion not to silicide among the contact regions of a wiring etc.) which should prevent a silicidation (not shown).
  • cleaning of the portion which performs a silicidation for removing the silicon oxide film generated on the semiconductor substrate SB front surface or the gate electrode GE front surface is performed. What is necessary is just to perform cleaning using fluoric acid in this cleaning process in addition to RCA cleaning. It may be pre-cleaning which, in addition to this, uses the equipment with which pre-cleaning (chemical dry cleaning) equipment and a sputtering system were unified.
  • Ni film MT is formed, as shown in FIG. 6 . Formation thickness of Ni film MT should just be set, for example to 8.0-12.5 [nm].
  • first RTA (Rapid Thermal Annealing) is performed.
  • Lamp annealing etc. performs this first RTA under the conditions of annealing temperature 300° C. ⁇ 350° C., 30 to 60 seconds, and N 2 atmosphere.
  • Ni film MT, and a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 are made to react.
  • NiSi 2 is formed in a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 at this time.
  • the second RTA is performed.
  • Lamp annealing etc. performs this second RTA under the conditions of annealing temperature 500° C. ⁇ 600° C., 30 to 60 seconds, and N 2 atmosphere.
  • Ni film MT, and a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 are made to react again.
  • NiSi is formed in a gate electrode GE front surface, and, on the other hand, NiSi 2 is formed in the front surface of source SE 2 and drain DE 2 .
  • NiSi should usually be formed on the annealing conditions of the second RTA. However, when it becomes a fine region in a plan view of source SE 2 and drain DE 2 to which one side becomes about 100 nm or less, source SE 2 and drain DE 2 will receive stress from surrounding element isolation film IS, and NiSi 2 will be formed under these conditions of the influence.
  • p channel MISFET may be formed on the main front surface of semiconductor substrate SB.
  • the conductivity type of an LDD region or gate electrode GE is a p type, it forms the same structure as FIG. 3 .
  • B boron
  • the p type source region and a p type drain region by implanting B (boron) ion into semiconductor substrate SB under the conditions of 0.5-2 [keV], and 1 ⁇ 10 15 to 1 ⁇ 10 16 [cm ⁇ 2 ], for example.
  • B boron
  • gate silicide region SCg and silicide regions SCs and SCd are formed in each front surface of gate electrode GE and source SE 2 and drain DE 2 , respectively.
  • FIG. 8 is the graph which shows the example of the result of having measured drain bodies-off leakage current (substrate leakage current) about n channel transistor TR 1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB, and the conventional n channel transistor which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 110> of semiconductor substrate SB.
  • a vertical axis shows the quantile (value“0” is a mode) in the normal distribution measuring result of all the n channel transistors, and the horizontal axis shows the substrate leakage current value (arbitrary unit).
  • the measuring result of graph G 1 is a thing of the conventional n channel transistor which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 110> of semiconductor substrate SB.
  • the measuring result of graph G 2 is a thing of n channel transistor TR 1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB.
  • the leakage current value is decreasing compared with a conventional n channel transistor.
  • the column of later ⁇ modification> may also describe minutely, it is considered to be the cause of this leakage current value reduction that it is hard to do abnormal growth of the nickel silicide region to the direction of crystal orientation ⁇ 100>, i.e., the extending direction of channel length, and the stable nickel silicide region is obtained thermally. Therefore, the increase in OFF leakage current can be suppressed and yield lowering can be suppressed.
  • the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB.
  • the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • NiSi is formed in a gate electrode GE front surface and NiSi 2 is formed in the front surface of source SE 2 and drain DE 2 was shown as conditions for RTA of the first and the second time.
  • NiSi may be formed in the both sides of a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 .
  • lamp annealing etc. performs first RTA under the conditions of annealing temperature 250° C. ⁇ 350° C., 30 to 60 seconds, and N 2 atmosphere (at this time, NiSi 2 is first formed in a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 ). Then, unreacted Ni film MT is removed by making semiconductor substrate SB immersed in the mixed solution of sulfuric acid and a hydrogen peroxide solution for 30 to 60 minutes. Lamp annealing etc. performs the second RTA under the conditions of annealing temperature 350° C. ⁇ 450° C., 30 to 60 seconds, and N 2 atmosphere. Then, NiSi is formed in the both sides of a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 .
  • NiSi 2 phase is a stable crystal phase thermally when NiSi 2 is formed in the front surface of source SE 2 and drain DE 2 , it is harder to do abnormal growth of the nickel silicide region than the case where NiSi is formed in the front surface of source SE 2 and drain DE 2 .
  • NiSi is formed on the other hand as a silicide region including nickel, it becomes low resistance rather than the case where NiSi 2 is formed.
  • FIG. 9 is the graph which shows the example of the result of having measured drain bodies-off leakage current (substrate leakage current) about n channel transistor TR 1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB, and formed NiSi in the front surface of source SE 2 and drain DE 2 , and n channel transistor TR 1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB, and formed NiSi 2 in the front surface of source SE 2 and drain DE 2 .
  • a vertical axis shows the quantile (value“0” is a mode) in the normal distribution measuring result of all the n channel transistors, and the horizontal axis shows the substrate leakage current value (arbitrary unit).
  • the measuring result of graph G 3 is a thing of the n channel transistor in which NiSi was formed on the front surface of source SE 2 and drain DE 2 .
  • the measuring result of graph G 4 is a thing of the n channel transistor in which NiSi 2 was formed on the front surface of source SE 2 and drain DE 2 .
  • the leakage current value is decreasing compared with the n channel transistor in which NiSi was formed on the front surface of source SE 2 and drain DE 2 . Therefore, the side in the case of forming NiSi 2 in the front surface of source SE 2 and drain DE 2 can suppress the increase in OFF leakage current more, and can suppress yield lowering.
  • NiSi is formed in the both sides of a gate electrode GE front surface, and the front surface of source SE 2 and drain DE 2 , resistance reduction can be aimed at in each nickel silicide region.
  • NiSi 2 is formed in the front surface of source SE 2 and drain DE 2 , it will be hard to do abnormal growth of the nickel silicide region.
  • silicide regions SCs and SCd are NiSi 2 , it is harder to extend nickel silicide regions SCs and SCd in the direction of crystal orientation ⁇ 100> than the case where silicide regions SCs and SCd are NiSi.
  • gate silicide region SCg is NiSi.
  • gate silicide region SCg is NiSi, it is low resistance from the case where gate silicide region SCg is NiSi 2 .
  • semiconductor substrate SB by which notch 1 a was formed in the direction of crystal orientation ⁇ 100> was prepared.
  • the channel length direction of n channel transistor TR 1 and TR 2 was arranged so that it might become parallel or vertical to the direction which connects notch 1 a and a substrate center.
  • n channel transistor TR 1 and TR 2 parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB, there is not necessarily the need of adopting the method of FIG. 1 .
  • FIG. 10 is a top view showing other semiconductor substrates in which the semiconductor device concerning this embodiment was formed.
  • semiconductor substrate SB which has a main front surface whose plane direction is a (100) surface is adopted like the case of FIG. 1 .
  • this substrate it is not in the direction of crystal orientation ⁇ 100>, and notch 1 a is formed in the direction of crystal orientation ⁇ 110>.
  • n channel transistors TR 1 and TR 2 for semiconductor substrate SB, after rotating 45 degrees or 135 degrees. Then, the channel length direction of n channel transistor TR 1 and TR 2 can be made parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB.
  • crystal growth of the region which has different crystal orientation from the crystal orientation of a main front surface for example is done partially on the main front surface of semiconductor substrate SB.
  • the policy which makes the channel length direction of n channel transistors TR 1 and TR 2 parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB may be taken by forming n channel transistors TR 1 and TR 2 on the crystal growth region.
  • This embodiment is a modification of the semiconductor device concerning Embodiment 1. Silicon and germanium are included at least near the main front surface in which source SE and drain DE were formed among semiconductor substrates SB in Embodiment 1.
  • FIG. 11 is a cross-sectional view showing the semiconductor device concerning this embodiment.
  • silicon germanium (SiGe) layer SG is formed near the main front surface in semiconductor substrates SB.
  • Source SE and drain DE are formed in silicon germanium layer SG.
  • Device structure is the same as FIG. 2 except those points.
  • Silicon germanium layer SG is easy to generate strain compared with a silicon layer. Therefore, in addition to the stress from surrounding element isolation film IS, source SE 2 and drain DE 2 also tend to receive the influence of strain from silicon germanium layer SG in the case of annealing of the second RTA in above-mentioned Embodiment 1 . Therefore, the nickel silicide region on source SE 2 and drain DE 2 is easily set to NiSi 2 .
  • At least the neighborhood of a main front surface in which source SE and drain DE were formed in semiconductor substrates SB includes silicon and germanium.
  • semiconductor substrate SB including silicon and germanium nickel silicide regions SCs and SCd on source SE and drain DE are easily set to NiSi 2 .
  • silicon germanium layer SG may be formed by growing a SiGe layer epitaxially partially. Or it may be formed by implanting germanium ion at least in a part of main front surface of a silicon substrate.
  • This embodiment is a modification of the semiconductor device concerning Embodiment 1.
  • N channel transistor TR 1 in Embodiment 1 is used as an element for memory areas, and n channel transistor TR 2 is used as an element for for example, logic regions.
  • FIG. 12 is a cross-sectional view showing the semiconductor device concerning this embodiment.
  • two structures of the same n channel transistor as FIG. 2 are located in a line, and are shown.
  • the transistor formed in region MM 1 in FIG. 12 is n channel transistor TR 1 of FIG. 1 , and is used as elements for memory areas, such as SRAM (Static Random Access Memory).
  • the transistor formed in region LG 1 in FIG. 12 is n channel transistor TR 2 of FIG. 1 , and is used as elements for logic regions, such as DSP (Digital Signal Processor).
  • DSP Digital Signal Processor
  • N channel transistor TR 1 formed in region MM 1 has the source SE, drain DE, gate electrode GE, gate insulating film GI, first sidewall insulating film SW 1 and second sidewall insulating film SW 2 which are the same as n channel transistor TR 1 formed on semiconductor substrate SB in Embodiment 1. It also has silicide regions SCs 1 and SCd 1 including nickel of a source SE and drain DE front surface, and gate silicide region SCg 1 including nickel of a gate electrode GE front surface.
  • Gate silicide region SCg 1 is NiSi and silicide regions SCs 1 and SCd 1 are NiSi 2 .
  • N channel transistor TR 2 formed in region LG 1 has source SE, drain DE, gate electrode GE, gate insulating film GI, first sidewall insulating film SW 1 and second sidewall insulating film SW 2 which are the same as n channel transistor TR 2 formed on semiconductor substrate SB in Embodiment 1. It also has silicide regions SCs 2 and SCd 2 including nickel of a source SE and drain DE front surface, and gate silicide region SCg 2 including nickel of a gate electrode GE front surface.
  • Gate silicide region SCg 2 is NiSi and silicide regions SCs 2 and SCd 2 are NiSi(s).
  • Element isolation film IS such as a silicon oxide film, is formed in the region which is in the main front surface of semiconductor substrate SB and which is around n channel transistor TR 1 and TR 2 , i.e., the outside of source SE and drain DE of each transistor.
  • the channel length direction of n channel transistors TR 1 and TR 2 is arranged so that it may become parallel to the crystal orientation ⁇ 100> of semiconductor substrate SB.
  • the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • Silicide regions SCs 1 and SCd 1 are NiSi 2 and silicide regions SCs 2 and SCd 2 are NiSi(s).
  • NiSi 2 Since it is hard to extend NiSi 2 in the direction of crystal orientation ⁇ 100>, it can use n channel transistor TR 1 as an element for memories, and can suppress the increase in OFF leakage current. On the other hand, rather than NiSi 2 , since NiSi is low resistance, it can use n channel transistor TR 2 as an element for logic, and can aim at speeding up of a logical circuit.
  • gate silicide regions SCg 1 and SCg 2 are NiSi(s).
  • gate silicide regions SCg 1 and SCg 2 are NiSi(s)
  • Embodiment 1 through 3 it explained by taking for an example the case where an ideal n channel transistor is formed, without touching the problem on a manufacturing process. However, when actually manufacturing an n channel transistor, various problems occur. The example is shown below.
  • FIG. 13-FIG . 15 are the drawings explaining this, and FIG. 13 shows a top view when the n channel transistor concerning Embodiment 1 is formed in the shape of an array.
  • FIG. 14 shows the perspective view seen from cutting plane line XIV-XIV in FIG. 13
  • FIG. 15 shows the cross-sectional view in cutting plane line XV-XV in FIG. 13 .
  • region AC has pointed out the active region in which source SE and drain DE are formed.
  • the plane direction of side surface SF is set to (100).
  • the extension to the channel length direction of the silicide region formed in side surface SF among silicide regions SCd is suppressed, and it is hard to generate a diving portion.
  • FIG. 18 is the graph which present application inventors got from various experiments and which compared the amount of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 110> of a substrate (110), and the amount of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 100> of a substrate (100). There are few amounts of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 100> of a substrate (100) than the amount of diving of the nickel silicide region to the direction of the crystal orientation ⁇ 110> of a substrate (110) as FIG. 18 shows.
  • the silicide region on a source and a drain was set to NiSi or NiSi 2 .
  • a silicide region including the nickel alloy which added the alloying elements (for example, Pt, Ta, Hf, etc.) of several percent to Ni may be used.
  • the diving phenomenon of a silicide region occurs about a silicide region including such a nickel alloy, and the present invention is effective also to such a silicide region.

Abstract

Even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is realized.
The channel length direction of n channel MISFET where the silicide region of nickel or a nickel alloy was formed on the source and the drain is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation <100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • The present application claims priority from Japanese patent application No. 2006-183133 filed on Jul. 3, 2006, the content of which is hereby incorporated by reference into this application.
  • 1. Field of the Invention
  • This invention relates to the semiconductor device provided with n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) comprising the silicide region of nickel or a nickel alloy.
  • 2. Description of the Background Art
  • For example, in a SoC (System on Chip) device etc., n channel MISFET by which the silicide region of nickel or a nickel alloy was formed in the gate, the source, and the drain by the self-align process (SAlicide:Self Aligned silicide) is adopted.
  • As information on prior art documents which forms a nickel silicide region in MISFET, some are following. [Patent Reference 1] Japanese Unexamined Patent Publication No. 2005-150267
    • SUMMARY OF THE INVENTION
  • MISFET is formed in many cases on the main front surface of the (100) silicon substrate from which the plane direction of a main front surface constitutes a surface (100). In n channel MISFET, it is common to arrange so that the direction (namely, channel length direction) which connects a source and a drain may become parallel to crystal orientation <110>. In n channel MISFET, it is because mobility will improve compared with the case of being parallel to other crystal orientation when a channel length direction is parallel to crystal orientation <110>.
  • However, it became clear by investigation of present application inventors that in n channel MISFET with a channel length direction parallel to crystal orientation <110>, when the silicide region of nickel or a nickel alloy is formed in a source and a drain, it will be easy to increase OFF leakage current, and the yield will fall. According to this investigation, it is considered to be the cause of an increase of OFF leakage current that the thermally unstable silicide region of nickel or a nickel alloy grows unusually along crystal orientation <110> by heat treatment, and erodes even to a channel region across the region of a source and a drain.
  • This invention was made in view of the above-mentioned situation, and even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, it aims at offering the semiconductor device in which OFF leakage current does not increase easily.
  • Invention according to claim 1 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface; wherein the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain; and a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate.
  • Invention according to claim 2 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface; and an element isolation film which is in the main front surface and was formed in a region around the n channel MISFET; wherein the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain; a front surface of a portion which adjoins the source and the drain in a channel width direction of the n channel MISFET among the element isolation films falls rather than a front surface of the source and the drain; and a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate.
  • Invention according to claim 6 is a semiconductor device, comprising: a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and a first and a second n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which were formed over the main front surface; wherein the first n channel MISFET includes a first source and a first drain which were formed in the main front surface, and a first silicide region which was formed in at least one front surface of the first source and the first drain and including nickel; the second n channel MISFET includes a second source and a second drain which were formed in the main front surface, and a second silicide region which was formed in at least one front surface of the second source and the second drain and including nickel; each channel length direction of the first and the second n channel MISFET is arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate; the first silicide region is NiSi2; and the second silicide region is NiSi.
  • According to invention according to claim 1, the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation <100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • According to invention according to claim 2, the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation <100>, even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained. When the front surface of the portion which adjoins a source and a drain in the channel width direction of n channel MISFET among element isolation films has fallen rather than the front surface of the source and the drain especially, in conventional <110> channel MISFET, although it is easy to extend the silicide region of nickel or the nickel alloy on a source and a drain in the direction of crystal orientation <110>, according to the present invention, the increase in OFF leakage current can be suppressed effectively.
  • According to invention according to claim 6, the channel length direction of the first and second n channel MISFET is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate. In the direction of crystal orientation <100>, since it is hard to extend a nickel silicide region, even if it is a case where a nickel silicide region is formed in the source and drain of the first and second n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained. A first silicide region is NiSi2 and a second silicide region is NiSi. Since it is hard to extend NiSi2 in the direction of crystal orientation <100>, it can use first n channel MISFET as an element for memories, for example, and can suppress the increase in OFF leakage current. On the other hand, rather than NiSi2, since NiSi is low resistance, it can use second n channel MISFET as an element for logic, for example, and can aim at speeding up of a logical circuit.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a top view showing the semiconductor substrate in which the semiconductor device concerning Embodiment 1 was formed;
  • FIG. 2 is a cross-sectional view showing the semiconductor device concerning Embodiment 1;
  • FIGS. 3 to 7 are drawings showing each step of the manufacturing method of the semiconductor device concerning Embodiment 1;
  • FIGS. 8 and 9 are drawings showing the effect of the semiconductor device concerning Embodiment 1;
  • FIG. 10 is a top view showing other semiconductor substrates in which the semiconductor device concerning Embodiment 1 was formed;
  • FIG. 11 is a cross-sectional view showing the semiconductor device concerning Embodiment 2;
  • FIG. 12 is a drawing showing the semiconductor device concerning Embodiment 3;
  • FIG. 13 is a top view when an n channel transistor is formed in the shape of an array;
  • FIG. 14 is the perspective view seen from cutting plane line XIV-XIV in FIG. 13;
  • FIG. 15 is a cross-sectional view in cutting plane line XV-XV in FIG. 13;
  • FIG. 16 is a drawing explaining the case where a silicide region extends to a channel length direction, and a diving portion occurs;
  • FIG. 17 is a drawing showing the effect of the present invention; and
  • FIG. 18 is the graph which compared the amount of diving of the nickel silicide region to the direction of the crystal orientation <110> of a substrate (110), and the amount of diving of the nickel silicide region to the direction of the crystal orientation <100> of a substrate (100).
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1
  • This embodiment is a semiconductor device arranged so that the channel length direction of n channel MISFET by which the nickel silicide region was formed on the source and the drain may become parallel to the crystal orientation <100> of a semiconductor substrate.
  • FIG. 1 is a drawing showing semiconductor substrate SB in which the semiconductor device concerning this embodiment was formed. Semiconductor substrate SB is a silicon substrate which comprises a single-crystal wafer of silicon. In FIG. 1, as the symbol of a double circle shows, this semiconductor substrate SB has a main front surface whose plane direction is a (100) surface. FIG. 1 shows the crystal orientation in each part with a crest parenthesis, triple digits, and an arrow. That is, the crystal orientation <100> and <110> within a wafer surface are adjusted and displayed.
  • On the main front surface of semiconductor substrate SB, the semiconductor device comprising the device of n channel transistor TR1 and TR2, etc. which are n channel MIS(for example, MOS) FET (Metal Insulator(for example, Oxide) Semiconductor Field Effect Transistor) and the wiring which connects between these devices is formed. Notch 1 a is formed in the direction of crystal orientation <100> at semiconductor substrate SB.
  • In this embodiment, channel length direction CH1 between the source/drains of n channel transistor TR1 and TR2 is arranged so that each may become parallel to the crystal orientation within the main surface of semiconductor substrate SB <100>. Symbol S shown in n channel transistor TR1 and TR2 shows a source, symbol D shows a drain and symbol G shows a gate.
  • FIG. 2 is a drawing showing the section in cutting plane line II-II in FIG. 1, and is a cross-sectional view showing the semiconductor device concerning this embodiment. As shown in FIG. 2, n channel transistor TR1 includes the laminated structure of gate insulating film (for example, silicon oxide film) GI and gate electrode (for example, polysilicon film) GE formed on the main front surface of semiconductor substrate SB, and source SE and drain DE formed in the main front surface of semiconductor substrate SB. N channel transistor TR1 includes further silicide regions SCs and SCd which were formed in the front surface of a source and a drain and including nickel, and gate silicide region SCg which was formed on the surface of the gate electrode and including nickel. Gate silicide region SCg is NiSi and silicide regions SCs and SCd are NiSi2.
  • Facing the side surface of the laminated structure of gate insulating film GI and gate electrode GE, and a part of front surface of source SE and drain DE, first sidewall insulating film SW1, such as a TEOS (Tetra Ethyl Oxy Silane) oxide film, is formed, respectively. Facing the side surface of the laminated structure of gate insulating film GI and gate electrode GE, and a part of front surface of source SE and drain DE via first sidewall insulating film SW1, second sidewall insulating film SW2, such as a silicon nitride film, is formed, respectively.
  • Element isolation film IS, such as a silicon oxide film, is formed in the region which is in the main front surface of semiconductor substrate SB and which is around n channel transistor TR1, i.e., the outside of source SE and drain DE.
  • FIG. 3-FIG. 7 are the drawings showing each step of the manufacturing method of the semiconductor device concerning an embodiment of the invention. Hereafter, the manufacturing method of the semiconductor device related to an embodiment of the invention using each drawing is explained.
  • First, as shown in FIG. 3, on semiconductor substrate SB, n channel MISFET including the laminated structure of gate insulating film GI and gate electrode GE, first sidewall insulating film SW1, second sidewall insulating film SW2, LDD (Lightly Doped Drain) region SE1 of a source, and LDD region DE1 of a drain are formed using photolithography technology and etching technology, ion implantation technology, etc.
  • Next, as shown in FIG. 4, ion implantation IP1 is performed and formation of source SE2 and drain DE2 is performed. Since source SE2 and drain DE2 are formed as n type source region and an n type drain region, what is necessary is, for example, to form them by implanting As (arsenic) ion into semiconductor substrate SB under the conditions of 5-20 [keV], and 1×1015 to 1>1016 [cm−2]] or to form them by implanting P (phosphorus) ion into semiconductor substrate SB under the conditions of 5-10 [keV], and 1×1014 to 1×1015 [cm−2]. And spike annealing (extremely short-time rapid heating processing is meant, and it is made to go up to 900° C.˜1000° C.) is given to source SE2 and drain DE2.
  • Next, as shown in FIG. 5, silicidation preventing film BL for covering the portion which should prevent a silicidation among semiconductor substrates SB is formed. What is necessary is just to adopt the USG (Undoped Silicate Glass) film formed with 400 forming temperature by the CVD (Chemical Vapor Deposition) method as this silicidation preventing film BL.
  • And anisotropic etching (dry etching) is selectively performed to silicidation preventing film BL using photolithography technology and etching technology. Silicidation preventing film BL is left into the portions (for example, portion not to silicide among the contact regions of a wiring etc.) which should prevent a silicidation (not shown).
  • Next, cleaning of the portion which performs a silicidation for removing the silicon oxide film generated on the semiconductor substrate SB front surface or the gate electrode GE front surface is performed. What is necessary is just to perform cleaning using fluoric acid in this cleaning process in addition to RCA cleaning. It may be pre-cleaning which, in addition to this, uses the equipment with which pre-cleaning (chemical dry cleaning) equipment and a sputtering system were unified.
  • Next, on the front surface of semiconductor substrate SB, and left silicidation preventing film BL (not shown), by a sputtering technique etc., Ni film MT is formed, as shown in FIG. 6. Formation thickness of Ni film MT should just be set, for example to 8.0-12.5 [nm].
  • And first RTA (Rapid Thermal Annealing) is performed. Lamp annealing etc. performs this first RTA under the conditions of annealing temperature 300° C.˜350° C., 30 to 60 seconds, and N2 atmosphere. Ni film MT, and a gate electrode GE front surface, and the front surface of source SE2 and drain DE2 are made to react. NiSi2 is formed in a gate electrode GE front surface, and the front surface of source SE2 and drain DE2 at this time.
  • Next, unreacted Ni film MT is removed. What is necessary is just to perform a removing processing by making semiconductor substrate SB immersed in the mixed solution of sulfuric acid and a hydrogen peroxide solution for 30 to 60 minutes.
  • Next, the second RTA is performed. Lamp annealing etc. performs this second RTA under the conditions of annealing temperature 500° C.˜600° C., 30 to 60 seconds, and N2 atmosphere. Ni film MT, and a gate electrode GE front surface, and the front surface of source SE2 and drain DE2 are made to react again. At this time, NiSi is formed in a gate electrode GE front surface, and, on the other hand, NiSi2 is formed in the front surface of source SE2 and drain DE2.
  • On the annealing conditions of the second RTA, NiSi should usually be formed. However, when it becomes a fine region in a plan view of source SE2 and drain DE2 to which one side becomes about 100 nm or less, source SE2 and drain DE2 will receive stress from surrounding element isolation film IS, and NiSi2 will be formed under these conditions of the influence.
  • Although not illustrated, p channel MISFET may be formed on the main front surface of semiconductor substrate SB. In forming such p channel MISFET, except that the conductivity type of an LDD region or gate electrode GE is a p type, it forms the same structure as FIG. 3. Then, what is necessary is just to form the p type source region and a p type drain region by implanting B (boron) ion into semiconductor substrate SB under the conditions of 0.5-2 [keV], and 1×1015 to 1×1016 [cm−2], for example. And what is necessary is just to perform spike annealing, subsequent formation of silicidation preventing film BL, and subsequent silicidation processing with the forming step of n channel MISFET.
  • Hereby, a silicidation is performed to gate electrode GE and source SE2 and drain DE2 of n channel transistor TR1, or in addition to them, to the gate electrode, the source region, and the drain region of a p channel transistor, respectively. As shown in FIG. 7, gate silicide region SCg and silicide regions SCs and SCd are formed in each front surface of gate electrode GE and source SE2 and drain DE2, respectively.
  • FIG. 8 is the graph which shows the example of the result of having measured drain bodies-off leakage current (substrate leakage current) about n channel transistor TR1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB, and the conventional n channel transistor which has arranged the channel length direction so that it may become parallel to the crystal orientation <110> of semiconductor substrate SB.
  • In FIG. 8, a vertical axis shows the quantile (value“0” is a mode) in the normal distribution measuring result of all the n channel transistors, and the horizontal axis shows the substrate leakage current value (arbitrary unit). The measuring result of graph G1 is a thing of the conventional n channel transistor which has arranged the channel length direction so that it may become parallel to the crystal orientation <110> of semiconductor substrate SB. The measuring result of graph G2 is a thing of n channel transistor TR1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB.
  • As clearly from FIG. 8, in n channel transistor TR1 concerning this embodiment, the leakage current value is decreasing compared with a conventional n channel transistor. When inventors observe in detail, as the column of later <modification> may also describe minutely, it is considered to be the cause of this leakage current value reduction that it is hard to do abnormal growth of the nickel silicide region to the direction of crystal orientation <100>, i.e., the extending direction of channel length, and the stable nickel silicide region is obtained thermally. Therefore, the increase in OFF leakage current can be suppressed and yield lowering can be suppressed.
  • That is, according to the semiconductor device concerning this embodiment, the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB. In the direction of crystal orientation <100>, since it is hard to extend a nickel silicide region, even if it is a case where nickel silicide regions SCs and SCd are formed in source SE and drain DE of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
  • In the above, the thing of the case that NiSi is formed in a gate electrode GE front surface and NiSi2 is formed in the front surface of source SE2 and drain DE2 was shown as conditions for RTA of the first and the second time. However, NiSi may be formed in the both sides of a gate electrode GE front surface, and the front surface of source SE2 and drain DE2.
  • In this case, lamp annealing etc. performs first RTA under the conditions of annealing temperature 250° C.˜350° C., 30 to 60 seconds, and N2 atmosphere (at this time, NiSi2 is first formed in a gate electrode GE front surface, and the front surface of source SE2 and drain DE2). Then, unreacted Ni film MT is removed by making semiconductor substrate SB immersed in the mixed solution of sulfuric acid and a hydrogen peroxide solution for 30 to 60 minutes. Lamp annealing etc. performs the second RTA under the conditions of annealing temperature 350° C.˜450° C., 30 to 60 seconds, and N2 atmosphere. Then, NiSi is formed in the both sides of a gate electrode GE front surface, and the front surface of source SE2 and drain DE2.
  • When inventors observe in detail, since NiSi2 phase is a stable crystal phase thermally when NiSi2 is formed in the front surface of source SE2 and drain DE2, it is harder to do abnormal growth of the nickel silicide region than the case where NiSi is formed in the front surface of source SE2 and drain DE2. When NiSi is formed on the other hand as a silicide region including nickel, it becomes low resistance rather than the case where NiSi2 is formed.
  • FIG. 9 is the graph which shows the example of the result of having measured drain bodies-off leakage current (substrate leakage current) about n channel transistor TR1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB, and formed NiSi in the front surface of source SE2 and drain DE2, and n channel transistor TR1 concerning this embodiment which has arranged the channel length direction so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB, and formed NiSi2 in the front surface of source SE2 and drain DE2.
  • In FIG. 9, a vertical axis shows the quantile (value“0” is a mode) in the normal distribution measuring result of all the n channel transistors, and the horizontal axis shows the substrate leakage current value (arbitrary unit). The measuring result of graph G3 is a thing of the n channel transistor in which NiSi was formed on the front surface of source SE2 and drain DE2. The measuring result of graph G4 is a thing of the n channel transistor in which NiSi2 was formed on the front surface of source SE2 and drain DE2.
  • As clearly from FIG. 9, with the n channel transistor in which NiSi2 was formed on the front surface of source SE2 and drain DE2, the leakage current value is decreasing compared with the n channel transistor in which NiSi was formed on the front surface of source SE2 and drain DE2. Therefore, the side in the case of forming NiSi2 in the front surface of source SE2 and drain DE2 can suppress the increase in OFF leakage current more, and can suppress yield lowering.
  • That is, when NiSi is formed in the both sides of a gate electrode GE front surface, and the front surface of source SE2 and drain DE2, resistance reduction can be aimed at in each nickel silicide region. On the other hand, when NiSi2 is formed in the front surface of source SE2 and drain DE2, it will be hard to do abnormal growth of the nickel silicide region.
  • Therefore, according to the semiconductor device concerning this embodiment, when silicide regions SCs and SCd are NiSi2, it is harder to extend nickel silicide regions SCs and SCd in the direction of crystal orientation <100> than the case where silicide regions SCs and SCd are NiSi.
  • According to the semiconductor device concerning this embodiment, gate silicide region SCg is NiSi. When gate silicide region SCg is NiSi, it is low resistance from the case where gate silicide region SCg is NiSi2.
  • In above-mentioned FIG. 1, semiconductor substrate SB by which notch 1 a was formed in the direction of crystal orientation <100> was prepared. The channel length direction of n channel transistor TR1 and TR2 was arranged so that it might become parallel or vertical to the direction which connects notch 1 a and a substrate center. However, in order to make the channel length direction of n channel transistor TR1 and TR2 parallel to the crystal orientation <100> of semiconductor substrate SB, there is not necessarily the need of adopting the method of FIG. 1.
  • For example, FIG. 10 is a top view showing other semiconductor substrates in which the semiconductor device concerning this embodiment was formed. In FIG. 10, semiconductor substrate SB which has a main front surface whose plane direction is a (100) surface is adopted like the case of FIG. 1. However, in this substrate, it is not in the direction of crystal orientation <100>, and notch 1 a is formed in the direction of crystal orientation <110>. In this case, what is necessary is just to form n channel transistors TR1 and TR2 for semiconductor substrate SB, after rotating 45 degrees or 135 degrees. Then, the channel length direction of n channel transistor TR1 and TR2 can be made parallel to the crystal orientation <100> of semiconductor substrate SB.
  • In addition, crystal growth of the region which has different crystal orientation from the crystal orientation of a main front surface, for example is done partially on the main front surface of semiconductor substrate SB. The policy which makes the channel length direction of n channel transistors TR1 and TR2 parallel to the crystal orientation <100> of semiconductor substrate SB may be taken by forming n channel transistors TR1 and TR2 on the crystal growth region.
    • Embodiment 2
  • This embodiment is a modification of the semiconductor device concerning Embodiment 1. Silicon and germanium are included at least near the main front surface in which source SE and drain DE were formed among semiconductor substrates SB in Embodiment 1.
  • FIG. 11 is a cross-sectional view showing the semiconductor device concerning this embodiment. In FIG. 11, silicon germanium (SiGe) layer SG is formed near the main front surface in semiconductor substrates SB. Source SE and drain DE are formed in silicon germanium layer SG. Device structure is the same as FIG. 2 except those points.
  • Silicon germanium layer SG is easy to generate strain compared with a silicon layer. Therefore, in addition to the stress from surrounding element isolation film IS, source SE2 and drain DE2 also tend to receive the influence of strain from silicon germanium layer SG in the case of annealing of the second RTA in above-mentioned Embodiment 1. Therefore, the nickel silicide region on source SE2 and drain DE2 is easily set to NiSi2.
  • About other points, since it is the same as that of the semiconductor device concerning Embodiment 1, explanation is omitted.
  • According to the semiconductor device concerning this embodiment, at least the neighborhood of a main front surface in which source SE and drain DE were formed in semiconductor substrates SB includes silicon and germanium. In semiconductor substrate SB including silicon and germanium, nickel silicide regions SCs and SCd on source SE and drain DE are easily set to NiSi2.
  • For example, on the main front surface of semiconductor substrate SB, silicon germanium layer SG may be formed by growing a SiGe layer epitaxially partially. Or it may be formed by implanting germanium ion at least in a part of main front surface of a silicon substrate.
    • Embodiment 3
  • This embodiment is a modification of the semiconductor device concerning Embodiment 1. N channel transistor TR1 in Embodiment 1 is used as an element for memory areas, and n channel transistor TR2 is used as an element for for example, logic regions.
  • FIG. 12 is a cross-sectional view showing the semiconductor device concerning this embodiment. In FIG. 12, two structures of the same n channel transistor as FIG. 2 are located in a line, and are shown. The transistor formed in region MM1 in FIG. 12 is n channel transistor TR1 of FIG. 1, and is used as elements for memory areas, such as SRAM (Static Random Access Memory). The transistor formed in region LG1 in FIG. 12 is n channel transistor TR2 of FIG. 1, and is used as elements for logic regions, such as DSP (Digital Signal Processor).
  • N channel transistor TR1 formed in region MM1 has the source SE, drain DE, gate electrode GE, gate insulating film GI, first sidewall insulating film SW1 and second sidewall insulating film SW2 which are the same as n channel transistor TR1 formed on semiconductor substrate SB in Embodiment 1. It also has silicide regions SCs1 and SCd1 including nickel of a source SE and drain DE front surface, and gate silicide region SCg1 including nickel of a gate electrode GE front surface.
  • Gate silicide region SCg1 is NiSi and silicide regions SCs1 and SCd1 are NiSi2.
  • N channel transistor TR2 formed in region LG1 has source SE, drain DE, gate electrode GE, gate insulating film GI, first sidewall insulating film SW1 and second sidewall insulating film SW2 which are the same as n channel transistor TR2 formed on semiconductor substrate SB in Embodiment 1. It also has silicide regions SCs2 and SCd2 including nickel of a source SE and drain DE front surface, and gate silicide region SCg2 including nickel of a gate electrode GE front surface.
  • Gate silicide region SCg2 is NiSi and silicide regions SCs2 and SCd2 are NiSi(s).
  • Element isolation film IS, such as a silicon oxide film, is formed in the region which is in the main front surface of semiconductor substrate SB and which is around n channel transistor TR1 and TR2, i.e., the outside of source SE and drain DE of each transistor.
  • According to the semiconductor device concerning this embodiment, like the case of Embodiment 1, the channel length direction of n channel transistors TR1 and TR2 is arranged so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB. In the direction of crystal orientation <100>, since it is hard to extend a nickel silicide region, even if it is a case where a nickel silicide region is formed in source SE and drain DE of n channel transistors TR1 and TR2, the semiconductor device in which OFF leakage current does not increase easily is obtained. Silicide regions SCs1 and SCd1 are NiSi2 and silicide regions SCs2 and SCd2 are NiSi(s). Since it is hard to extend NiSi2 in the direction of crystal orientation <100>, it can use n channel transistor TR1 as an element for memories, and can suppress the increase in OFF leakage current. On the other hand, rather than NiSi2, since NiSi is low resistance, it can use n channel transistor TR2 as an element for logic, and can aim at speeding up of a logical circuit.
  • According to the semiconductor device concerning this embodiment, gate silicide regions SCg1 and SCg2 are NiSi(s). When gate silicide regions SCg1 and SCg2 are NiSi(s), it is low resistance from the case where gate silicide regions SCg1 and SCg2 are NiSi2.
    • (Modification)
  • In above-mentioned Embodiment 1 through 3, it explained by taking for an example the case where an ideal n channel transistor is formed, without touching the problem on a manufacturing process. However, when actually manufacturing an n channel transistor, various problems occur. The example is shown below.
  • Silicidation preventing film BL was shown in above-mentioned FIG. 5. When performing anisotropic etching selectively to this silicidation preventing film BL, it is easy to generate superfluous etching to element isolation film IS. The side surface of source SE and drain DE may be exposed. FIG. 13-FIG. 15 are the drawings explaining this, and FIG. 13 shows a top view when the n channel transistor concerning Embodiment 1 is formed in the shape of an array. FIG. 14 shows the perspective view seen from cutting plane line XIV-XIV in FIG. 13, and FIG. 15 shows the cross-sectional view in cutting plane line XV-XV in FIG. 13. In each drawing, region AC has pointed out the active region in which source SE and drain DE are formed.
  • It turns out that the front surface of portion ISa which adjoins active region AC in which source SE and drain DE are formed in the channel width direction of n channel MISFET of element isolation film IS which is in the main front surface of semiconductor substrate SB, and was formed in the region around n channel MISFET as shown in FIG. 14 and FIG. 15, has fallen rather than the front surface of active region AC (namely, source SE and drain DE). And in the central part, level difference ST from an active region AC front surface is large especially among element isolation films ISa.
  • Present application inventors have found out that the generation of depression of element isolation film ISa, i.e., the generation of level difference ST, originates in superfluous etching to element isolation film IS in the case of the selective anisotropic etching to above-mentioned silicidation preventing film BL.
  • When the generation of depression of this element isolation film ISa occurs, as shown in FIG. 14, side surface SF of active region AC in which source SE and drain DE are formed will be exposed. And when side surface SF is exposed, near side surface SF will be silicided. In the conventional n channel transistor which has arranged the channel length direction so that it may become parallel to the crystal orientation <110> of semiconductor substrate SB, as shown in FIG. 16, the plane direction of side surface SF is set to (110). The silicide region formed in side surface SF among silicide regions SCd extends to a channel length direction, and it is easy to generate diving portion EX.
  • On the other hand, in the n channel transistor of the present invention which arranges a channel length direction so that it may become parallel to the crystal orientation <100> of semiconductor substrate SB, as shown in FIG. 17, the plane direction of side surface SF is set to (100). The extension to the channel length direction of the silicide region formed in side surface SF among silicide regions SCd is suppressed, and it is hard to generate a diving portion.
  • FIG. 18 is the graph which present application inventors got from various experiments and which compared the amount of diving of the nickel silicide region to the direction of the crystal orientation <110> of a substrate (110), and the amount of diving of the nickel silicide region to the direction of the crystal orientation <100> of a substrate (100). There are few amounts of diving of the nickel silicide region to the direction of the crystal orientation <100> of a substrate (100) than the amount of diving of the nickel silicide region to the direction of the crystal orientation <110> of a substrate (110) as FIG. 18 shows.
  • Namely, even if it is a case where the generation of depression of the above element isolation films ISa occurs, when the channel length direction of n channel MISFET is arranged so that it may become parallel to the crystal orientation <100> of a semiconductor substrate, since it is hard to extend a nickel silicide region in the direction of crystal orientation <100>, even if it is a case where a nickel silicide region is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained. When the front surface of the portion which adjoins a source and a drain in the channel width direction of n channel MISFET among element isolation film IS has fallen rather than the front surface of the source and the drain especially, in conventional <110> channel MISFET, although it is easy to extend the nickel silicide region on a source and a drain in the direction of crystal orientation <110>, according to the present invention, the increase in OFF leakage current can be suppressed effectively.
  • Even if it is n channel MISFET in which the generation of depression of the above element isolation films ISa generated, when the silicide region on a source and a drain is NiSi2, there is an effect which a nickel silicide region cannot extend in the direction of crystal orientation <100> as easily as the case where a silicide region is NiSi.
  • Even if it is n channel MISFET in which the generation of depression of the above element isolation films ISa generated, as shown in Embodiment 2, when at least the neighborhood of a main front surface includes silicon and germanium, the nickel silicide region on a source and a drain will be easily set to NiSi2 by the generation of strain among semiconductor substrates.
  • Even if it is n channel MISFET in which the generation of depression of the above element isolation films ISa generated, when a gate silicide region is NiSi, it is low resistance from the case where a gate silicide region is NiSi2.
  • In description of above-mentioned Embodiment 1-3 and the modification shown after FIG. 13, the silicide region on a source and a drain was set to NiSi or NiSi2. However, in recent years, a silicide region including the nickel alloy which added the alloying elements (for example, Pt, Ta, Hf, etc.) of several percent to Ni may be used. The diving phenomenon of a silicide region occurs about a silicide region including such a nickel alloy, and the present invention is effective also to such a silicide region.

Claims (7)

1. A semiconductor device, comprising:
a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and
n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface;
wherein
the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain; and
a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate.
2. A semiconductor device, comprising:
a semiconductor substrate which has a main front surface whose plane direction is a surface (100);
n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed over the main front surface; and
an element isolation film which is in the main front surface and was formed in a region around the n channel MISFET;
wherein
the n channel MISFET includes a source and a drain which were formed in the main front surface, and a silicide region including nickel or nickel alloy formed in at least one front surface of the source and the drain;
a front surface of a portion which adjoins the source and the drain in a channel width direction of the n channel MISFET among the element isolation films falls rather than a front surface of the source and the drain; and
a channel length direction of the n channel MISFET has been arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate.
3. A semiconductor device according to claim 1, wherein
the silicide region is NiSi2.
4. A semiconductor device according to claim 1, wherein
at least a neighborhood of the main front surface in which the source and the drain were formed in the semiconductor substrate includes silicon and germanium.
5. A semiconductor device according to claim 1, wherein
the n channel MISFET includes further a laminated structure of a gate insulating film and a gate electrode formed over the main front surface, and a gate silicide region including nickel formed in a front surface of the gate electrode; and
the gate silicide region is NiSi.
6. A semiconductor device, comprising:
a semiconductor substrate which has a main front surface whose plane direction is a surface (100); and
a first and a second n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which were formed over the main front surface;
wherein
the first n channel MISFET includes a first source and a first drain which were formed in the main front surface, and a first silicide region which was formed in at least one front surface of the first source and the first drain and including nickel;
the second n channel MISFET includes a second source and a second drain which were formed in the main front surface, and a second silicide region which was formed in at least one front surface of the second source and the second drain and including nickel;
each channel length direction of the first and the second n channel MISFET is arranged so that it may become parallel to a crystal orientation <100> of the semiconductor substrate;
the first silicide region is NiSi2; and
the second silicide region is NiSi.
7. A semiconductor device according to claim 6, wherein
the first n channel MISFET includes further a first laminated structure of a first gate insulating film and a first gate electrode formed over the main front surface, and a first gate silicide region including nickel formed in a front surface of the first gate electrode;
the second n channel MISFET includes further a second laminated structure of a second gate insulating film and a second gate electrode formed over the main front surface, and a second gate silicide region including nickel formed in a front surface of the second gate electrode; and
the first and the second gate silicide region are NiSi.
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