US20070062448A1 - CVD apparatus of improved in-plane uniformity - Google Patents
CVD apparatus of improved in-plane uniformity Download PDFInfo
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- US20070062448A1 US20070062448A1 US11/521,216 US52121606A US2007062448A1 US 20070062448 A1 US20070062448 A1 US 20070062448A1 US 52121606 A US52121606 A US 52121606A US 2007062448 A1 US2007062448 A1 US 2007062448A1
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- gas
- flange
- sidewall
- inner tube
- cvd apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Definitions
- the present invention generally relates to a CVD (chemical vapor deposition) apparatus used for forming a film such as a silicon oxide film or a silicon nitride film on a substrate held on a boat at elevated temperatures in a processing space filled with a gas mixture of two gases of different kinds, such as a silane family gas and an N 2 O gas, under a reduced pressure environment.
- CVD chemical vapor deposition
- LPCVD low-pressure CVD apparatus
- FIGS. 8A and 8B shows an example of a CVD apparatus according to a related art, wherein FIG. 8A shows the overall construction of the CVD apparatus, while FIG. 8B shows the CVD apparatus in an enlarged cross-sectional view taken along a line C-C′ of FIG. 8B .
- the CVD apparatus includes, at a central part thereof, a boat 104 for holding substrates 102 , which may be a semiconductor substrate, on which film formation is to be made.
- the boat 104 is supported on a flange 110 having a circular shape in a plan view, and thus, the bottom part of the boat 104 is supported on the flange 110 .
- an inner tube 106 of cylindrical shape is disposed so as to surround the boat 104 , wherein the inner tube 106 is held by an inner tube holding part 110 a of the flange 110 provided for holding the inner tube 106 .
- the inner tube holder part 110 a is a plate-like member projecting from the inner surface of the flange sidewall inward with a predetermined separation from the bottom surface of the flange 110 .
- an outer tube 108 at the outside of the inner tube 106 so as to enclose the inner tube 106 entirely, wherein the outer tube 108 is held by an outer tube holding part 110 b of the flange 110 .
- gas introducing nozzles 132 a and 132 b on the flange sidewall at a height between the bottom surface of the flange 110 and the inner tube holding part 110 a of the flange 110 , wherein the gas introducing nozzles 132 a and 132 b are provided respectively for introducing a silane gas and an N 2 O gas into the inner tube 106 .
- the gas introducing nozzles 132 a and 132 b are provided such that respective gas ejection ports protrude inward from the inner surface of the flange sidewall, in other word, the inner surface of the sidewall of the flange 110 , with a distance of about several centimeters.
- the gases introduced from the gas introducing parts 132 a and 132 b reach a substrate 102 held in the boat 104 at the bottom part thereof and moves through the inner tube 106 in the upward direction.
- the gas reached the top part of the inner tube 106 is then evacuated from the gas evacuation port 116 to the outside of the apparatus by the pump after flowing through the space between the inner tube 106 and the outer tube 108 .
- the gas introducing nozzles 132 a and 132 b are disposed so as to project for a distance of several centimeters from the inner surface of the flange sidewall toward the central part of the flange 110 for facilitating mixing of the two gases thus introduced therefrom.
- FIG. 9 there is proposed a construction in the related art in which an L-shaped gas introducing nozzle 134 is provided such that the gas ejection port of the nozzle 134 points upward to the ceiling of the outer tube 108 .
- the gases are injected in the upward direction for facilitating mixing of the two gases.
- Patent Reference 1 for example.
- the two nozzles projecting from the sidewall surfaces of the flange toward the flange central part are used solely for the film formation on the substrates placed in the lower part of the boat, while the L-shaped nozzles are used solely for the film formation on the substrates placed in the upper part of the boat.
- Patent Reference 1 has the main objective of attaining uniformity of film thickness between the top part of the boat and the bottom part of the boat, the LPCVD apparatus uses the same nozzles that are used in the conventional LPCVD apparatus of vertical type at the bottom part of the boat. Thus, even when there is provided improvement to use the L-shaped nozzles, the in-plane uniformity of film thickness is not improved for the substrates placed at the bottom part of the boat.
- the present invention provides a CVD apparatus, comprising:
- a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction;
- gas introducing nozzles provided on a flange sidewall at two locations thereof, said gas introducing nozzles introducing gases from outside to an interior of said inner tube at respective gas ejection ports;
- a gas evacuation part evacuating a gas in said outer tube to outside thereof;
- the guide part is provided in the vicinity of the gas introducing nozzles with the CVD apparatus of the present invention, the two gases introduced from the respective gas introducing nozzles are mixed thoroughly with each other as they are caused to flow in the direction generally parallel to the bottom surface of the flange along the inner surface of the flange sidewall.
- the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the flange sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of the flange sidewall
- a guide structure of the gas mixture with low cost.
- a guide structure may be formed by using a stainless steel plate bent in an L-shaped form.
- rectangular surface includes, in addition to a plate of a rectangular shape, other plates such as a plate having a curved edge surface, as long it can provide a similar effect when used in place of the plate of the rectangular shape.
- the flange comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided, the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the sidewall and the guide part forming together a mixing space for mixing the gases to form a mixed gas, the mixing space further causing to flow the mixed gas along the inner surface of the sidewall surface.
- the projecting plate forms a holder holding the inner tube.
- the guide part comprises a conduit connected to the respective gas ejection ports of the gas introducing nozzles so as to merge the gases ejected from the respective ejection ports.
- the gases are mixed with each other to form a mixed gas and are ejected in the direction generally parallel to the bottom surface of the flange along the inner surface of the flange sidewall.
- the gas introducing nozzles introduce a silane family gas and an N 2 O gas to the interior of the inner tube respectively.
- the silane family gas includes any of monosilane, disilane, dichlorosilane, and the like.
- the CVD apparatus of the present invention it is possible to supply a thoroughly mixed gas of the silane family gas and the N 2 O gas to the entire surface of the substrates, and thus, it becomes possible to cause the CVD reaction more efficiently and uniformly as compared with the conventional CVD apparatus. Thereby, it becomes possible to improve the uniformity of the film formed by using the silane family gas and the N 2 O gas in terms of film thickness and film quality.
- the gas introducing nozzles are provided at a same height as measured from a bottom surface of the flange. Further, it is preferable that one of the gas introducing nozzles located at an upstream side with regard to the other of the gas introducing nozzles in a direction of a flow of the mixed gas along the inner surface, is used to introduce the N 2 O gas, and the other gas introducing nozzle is used to introduce the silane family gas.
- the silane family gas is supplied only with a small amount as compared with the N 2 O gas, and thus, it is preferable to introduce the silane family gas from the gas introducing nozzle provided in the downstream side of the gas flow path formed along the inner wall of the flange sidewall and to introduce the N 2 O gas from the gas introducing nozzle provided at the upstream side of the gas flow direction, in view of the fact that the gas introducing nozzle at the upstream side introduces the N 2 O gas with an overwhelming flow rate as compared with the silane family gas.
- the silane family gas is carried by the N 2 O gas and efficient mixing takes place between the silane gas and the N 2 O gas as the silane gas is carried by the N 2 O gas of large flow rate.
- the present invention provides a CVD apparatus, comprising:
- a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction;
- a gas introducing nozzle provided on a flange sidewall, said gas introducing nozzle introducing a gas from outside to an interior of said inner tube at a gas ejection port;
- a gas evacuation part evacuating a gas in said outer tube to outside thereof;
- a mixed gas supplying part provided outside said flange, said mixed gas supplying part comprising: two gas supplying paths respectively supplying different gases therethrough; a mixing part merging said two gas supplying paths with each other, said mixing part mixing said gases supplied from said respective gas supplying paths to form a mixed gas; and a single gas flow path supplying said mixed gas to one of said gas introducing nozzles connected thereto; and
- the two gases are pre-mixed before being introduced into the CVD apparatus, it becomes possible to supply a thoroughly mixed gas to the surface of the substrates with reliability.
- the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of said sidewall
- such a guide part may be formed by using a stainless steel plate bent in an L-shaped form.
- the flange further comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided, the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the flange sidewall and the guide part forming together a flow deflection part for causing the mixed to flow gas along the inner surface of the sidewall surface.
- the guide part may comprise a conduit connected to the gas ejection port of the gas introducing nozzle, the conduit discharging the mixed gas in the direction generally parallel to the bottom surface of the flange along the inner surface of the sidewall.
- the gas introducing nozzle may introduce a mixture of a silane family gas and an N 2 O gas to the interior of the inner tube as the mixed gas also in this second aspect of the present invention.
- the CVD apparatus comprises a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction; an inner tube extending in said vertical direction and provided so as to surround said boat laterally; an outer tube surrounding said inner tube laterally from outside, said outer tube further covering a top part of said inner tube; a flange holding said inner tube and outer tube at respective bottom ends thereof; gas introducing nozzles provided on a flange sidewall at two locations thereof, said gas introducing nozzles introducing gases from outside to an interior of said inner tube at respective gas ejection ports; and a gas evacuation part evacuating a gas in said outer tube to outside thereof; wherein there is provided a guide part in the vicinity of said gas ejection ports of said gas introducing nozzles such that said gases ejected from said respective gas ejection ports are caused to flow generally parallel to a bottom surface of said flange along an inner surface of said flange side
- the guide part includes two rectangular surfaces sharing respective edges with each other, such that one of the rectangular surfaces is disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces is disposed generally perpendicular to the inner surface of said sidewall, the construction of the guide part is simplified and it becomes possible to provide the guide part with low cost.
- the flange further comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided such that the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the flange sidewall and the guide part form together a mixing space for mixing the gases, the mixed gas is caused to flow along the inner surface of said sidewall surface and it becomes possible to mix the two gases thoroughly. Thereby, it becomes possible to improve the in-plane uniformity of the film formed on the substrate surface in terms of film thickness and film quality.
- one of the gas introducing nozzles used for introducing the N 2 O gas to be located at an upstream side with regard to the other of the gas introducing nozzles used for introducing the silane family gas in the direction of the flow of the mixed gas along the inner surface of the flange sidewall, the silane family gas supplied with a small amount is mixed thoroughly with the N 2 O gas supplied with large amount as it is carried by the N 2 O gas, and mixing of the silane family gas and the N 2 O gas is facilitated further. With this, in-plane uniformity is improved further for the films formed on the surface of the substrates held on the boat.
- the CVD apparatus comprises a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction; an inner tube extending in said vertical direction and provided so as to surround said boat laterally; an outer tube surrounding said inner tube laterally from outside, said outer tube further covering a top part of said inner tube; a flange holding said inner tube and outer tube at respective bottom ends thereof; a gas introducing nozzle provided on a flange sidewall, said gas introducing nozzle introducing a gas from outside to an interior of said inner tube at a gas ejection port; a gas evacuation part evacuating a gas in said outer tube to outside thereof; a mixed gas supplying part provided outside said flange, said mixed gas supplying part comprising: two gas supplying paths respectively supplying different gases therethrough; a mixing part merging said two gas supplying paths with each other, said mixing part mixing said gases supplied from said respective gas supplying paths to form a mixed
- the mixed gas introduced into the apparatus forms a flow at the bottom of the flange along the inner surface of the flange sidewall with the action of the guide part, it becomes possible to supply the thoroughly mixed gas to the surface of the substrate held on the top part of the boat from the bottom of the boat, and it becomes possible to achieve uniform film formation.
- the construction of the guide part is simplified and it becomes possible to provide the guide part with low cost, by configuring the CVD apparatus such that the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of said sidewall.
- the flange further comprises a projecting plate projecting from the inner surface of the sidewall in a direction toward a center of the flange in a part thereof where at least the guide part is provided, and such that the projecting plate, a bottom surface of the flange inside the sidewall, the inner surface of the sidewall and the guide part form together a mixing space for mixing the gases to form a mixed gas, the mixing space further causing to flow the mixed gas along the inner surface of said sidewall surface.
- the guide part also easily and with low cost by forming the guide part such that the guide part comprises a conduit connected to the gas ejection port of the gas introducing nozzle and cause the conduit to discharge the mixed gas in the direction generally parallel to the bottom surface of the flange along the inner surface of the sidewall.
- FIGS. 1A and 1B are diagrams showing the construction of a CVD apparatus according to an embodiment of the present invention respectively in an overall cross-sectional view and an enlarged cross-sectional view taken along a line A-A′ of FIG. 1A ;
- FIG. 2 is an enlarged oblique view diagram showing an example of a guide part
- FIG. 3 is a graph showing the relationship between the location of the substrate in a boat and the in-plane uniformity of the film formed on such a substrate;
- FIG. 4 is a graph showing the relationship between the location of the substrate in a boat and the refractive index of the film formed on such a substrate;
- FIGS. 5A and 5B are cross-sectional diagrams showing another embodiment of the CVD apparatus of the present invention.
- FIGS. 6A and 6B are cross-sectional diagrams showing a further embodiment of the CVD apparatus of the present invention.
- FIG. 7 is a cross-sectional diagram showing another embodiment of the CVD apparatus of the present invention.
- FIGS. 8A and 8B are cross-sectional diagrams showing an example of a CVD apparatus according to a related art of the present invention.
- FIG. 9 is a cross-sectional diagram showing another example of a CVD apparatus according to a related art of the present invention.
- FIGS. 1A and 1B showing the construction of a CVD apparatus according to a preferred embodiment of the present invention, wherein FIG. 1A shows the CVD apparatus in an overall cross-sectional view while FIG. 1B shows the CVD apparatus in an enlarged cross-sectional view taken along a line A-A′ of FIG. 1A .
- the CVD apparatus includes a boat 4 at a central part thereof for holding substrates 2 on which film formation is to be made, wherein the substrates 2 may be a semiconductor substrate.
- the boat 4 is formed of a quartz glass, for example, and holds therein fifty substrates 2 from the bottom part thereof to the top part thereof in a manner that each substrate 2 is laid horizontally.
- a flange 10 of circular cross-sectional shape below the boat 4 wherein the bottom part of the boat 4 is supported by the flange 10 .
- the inner tube holding part 10 a is a donuts-shaped circular plate member projecting from the sidewall of the flange 10 toward a central part thereof, wherein inner tube holding part 10 a is formed with a separation from the bottom surface of the flange 10 .
- an outer tube 8 of cylindrical form such that the outer tube 8 surrounds the inner tube 6 with a separation therefrom, wherein the outer tube 8 is held by an outer tube holding part 10 b of the flange 10 formed at a level higher than the inner tube holding part 10 a with reference to the bottom surface of the flange 10 .
- the flange 10 is provided with two gas introducing nozzles 12 a and 12 b on a sidewall thereof between the flange bottom surface and the inner tube holding part 10 a , wherein the two gas introducing nozzles 12 a and 12 b are formed at the same level with reference to the bottom surface of the flange 10 .
- the gas introducing nozzles 12 a and 12 b eject respective gases toward the central part of the flange 10 .
- a guide part 14 between the bottom surface and the inner tube holding part 10 a of the flange 10 in the vicinity of the gas ejection ports of the gas introducing nozzles 12 a and 12 b.
- the guide part 14 is provided such that the upper edge thereof makes a contact with the bottom surface of the inner tube holding part 10 a and the bottom edge of the guide part 14 makes a contact with the bottom surface of the flange 10 .
- the guide part 14 is formed of two rectangular surfaces 14 a and 14 b sharing an edge with each other, wherein the rectangular surface 14 a is formed generally perpendicular to the direction of gas ejection of the gas introducing nozzles 12 a and 12 b with a distance of about 40 mm from the sidewall of the flange 10 or flange sidewall so as to deflect the flow of the gases introduced from the gas introducing nozzles 12 a and 12 b.
- the rectangular surface 14 a is curved along the inner surface of the flange sidewall while the rectangular surface 14 b is provided generally perpendicular to the inner surface of the flange sidewall in a manner fixed to the flange sidewall at the side of the gas introducing nozzle 12 b.
- the guide part 14 is formed by bending a stainless steel plate of the thickness of 2 mm in a generally L-shaped form. By using such a generally U-shaped plate member, it is possible to provide the guide part 14 simply with low cost.
- the gas exhaust part 16 is provided on the flange sidewall at a level higher than the inner tube holding part 10 a with reference to the bottom surface of the flange 10 .
- the gas exhaust part 16 is connected to a pump (not illustrated) and the gas inside the outer tube 8 is evacuated by the pump. Further, by driving the pump, the space inside the outer tube 8 (the space inside the CVD apparatus) is held to a low pressure state.
- the guide part 14 is disposed such that the rectangular surface 14 a makes a contact with the innermost edge surface of the inner tube holding part 10 a as shown in FIG. 2 , while the rectangular surface 14 b , formed with a smaller height as compared with the rectangular surface 14 a , is inserted between the lower surface of the inner tube holding part 10 a and the bottom surface of the flange 10 .
- the space 18 there is formed a space 18 in the vicinity of the gas ejection ports of the gas introducing nozzles 12 and 12 b in the manner surrounded by the bottom surface of the flange 10 , the flange sidewall and the rectangular surfaces 14 a and 14 b of the guide part 14 .
- the two gases respectively introduced from the gas introducing nozzles 12 a and 12 b are mixed thoroughly in the space 18 and the resultant mixed gas is caused to flow along the inner surface of the flange sidewall after being ejected generally in the horizontal direction.
- the gases introduced from the gas introducing nozzles 12 a and 12 b can flow only in one direction (anticlockwise direction in the illustrated example).
- the gas introducing nozzle 12 b is located at an upstream side while the gas introducing nozzle 12 a is located at a downstream side of the gas introducing nozzle 12 b.
- the SiH 4 gas is introduced from the gas introducing nozzle 12 a and the N 2 O gas from the gas introducing nozzle 12 b in such a manner that the SiH 4 gas is mixed with 25 cc/m and the N 2 O gas with 1225 cc/m.
- the CVD apparatus includes, in addition to the structure explained above, other mechanisms such as a port elevator that pulls down the heater heating the interior of the apparatus and the boat 4 for enabling taking out or loading of the substrates 2 .
- the heaters are used to heat the boat 4 such that the boat 4 shows the temperature of 823° C., 803° C., 798° C. and 793° C. at four measuring points defined from the top part to the bottom part of the boat 4 with an equal distance. Further, the pressure inside the apparatus is set to 0.1 kPa by using the pump.
- a SiH 4 gas and a N 2 O gas are used for the two gases, and thus, the SiH 4 gas is introduced from the gas introducing nozzle 12 a while the N 2 O gas is introduced from the gas introducing nozzle 12 b.
- the SiH 4 gas and the N 2 O gas are introduced into the CVD apparatus respectively from the gas introducing nozzles 12 a and 12 b via the flange 10 .
- the respective gases thus ejected from the gas ejection ports of the gas introducing nozzles 12 a and 12 b are mixed thoroughly in the space formed by the guide part 14 , and the like, and the mixed gas formed as a result of mixing of the SiH 4 gas and the N 2 O gas is caused to flow along the inner surface of the flange sidewall. Thereafter, the mixed gas is flows in the inner tube 6 in the upward direction. After reaching the top part of the outer tube 8 , the mixed gas flows to the gas evacuation part 16 through the space between the outer tube 8 and the inner tube 6 and is discharged to the outside of the apparatus by the pump.
- the CVD apparatus can mix the two gases ejected from the respective, different nozzles 12 a and 12 b thoroughly by forming the space 18 in the vicinity of the respective gas ejection ports of the gas introducing nozzles 12 a and 12 b , and it is possible to improve the in-plane uniformity of the film formed by using these gases.
- the mixed gas is ejected generally horizontally from the space 18 and flows along the inner surface of the flange sidewall at the bottom of the flange 10 .
- a thoroughly mixed gas is supplied from the bottom part to the top part of the boat 4 , and it becomes possible to form a uniform film on the surface of the plural substrates 2 held in the boat 4 in the manner aligned from the bottom part thereof to the top part thereof.
- FIGS. 3 and 4 are graphs showing the relationship between the height of the substrate in the boat (processing height) and the in-plane uniformity of the film formed on the substrate surface, wherein FIG. 3 shows the in-plane uniformity of the film thickness while FIG. 4 shows the in-plane uniformity of the refractive index of the case of irradiating a light to the film.
- horizontal axis represents the processing position of the substrate to be measured (height in the boat), wherein it should be noted that TOP represents the top part of the boat, CNT represents the center of the boat, and BTM represents the bottom of the boat bottom.
- the vertical axis represents the in-plane uniformity (%) of the film formed on the surface of the semiconductor substrate.
- the horizontal axis represents the processing position of the substrate to be measured while the vertical axis represents the in-plane uniformity (%) of the refractive index of the film formed on the surface of the semiconductor substrate.
- the data (X) represented by the broken line represents in-plane uniformity of film thickness of the film formed in the vicinity of the nozzle 12 without forming the guide part 14
- the date (Y) represented by the one-dotted line represents in-plane uniformity of film thickness of the film for the case the guide part 14 is disposed in the vicinity of the nozzle 12 and film formation is conducted by introducing the SiH 4 gas from the upstream side nozzle 12 b
- the data (Z) represented by the continuous line represents in-plane uniformity of film thickness of the film formed by disposing the guide part 14 in the vicinity of the nozzle 12 and introducing the SiH 4 gas from the nozzle 12 a at the downstream side similarly to the case of the CVD apparatus of FIGS. 1 and 2 .
- the data (X) represented by the broken line represents in-plane uniformity of refractive index of the film formed in the vicinity of the nozzle 12 for the case not forming the guide part 14
- the data (Y) represented by the continuous line represents in-plane uniformity of refractive index of the film formed by disposing the guide part 14 in the vicinity of the nozzle 12 and introducing the SiH 4 gas from the nozzle 12 a at the downstream side similarly to the case of the CVD apparatus of FIGS. 1 and 2 .
- in-plane uniformity A 1 (%) for the film thickness and the in-plane uniformity A 2 (%) for the refractive index of FIGS. 3 and 4 are calculated according to Equations (1) and (2) below:
- a 1 (maximum film thickness ⁇ minimum film thickness)/2/average in-plane film thickness ⁇ 100
- a 2 (maximum refractive index ⁇ minimum refractive index)/2/average in-plane refractive index ⁇ 100 (2)
- the refractive index shown in FIG. 4 for the case of irradiating optical radiation to the film represents the film quality, and thus, it is indicated that a film of more uniform film quality is obtained when the in-plane variation of the refractive index has become smaller.
- the in-plane uniformity is improved for the film formed on the substrate with regard to the film thickness and film quality by disposing the guide part 14 in the vicinity of the gas ejection ports of the gas introducing nozzles 12 a and 12 b .
- This effect of improvement appears most conspicuously in the substrates held in the bottom part of the boat 4 .
- the in-plane uniformity of the film thickness is improved by about 0.3% for the film formed on the substrate surface by introducing the SiH 4 gas from the gas introducing nozzle 12 a at the lower stream side and by introducing the N 2 O gas from the upstream side.
- the present embodiment uses only the L-shaped stainless steel plate for the guide part 14 and forms the space for mixing the two gases by using the inner tube holding part 10 a , it becomes possible to build a CVD apparatus capable of supplying the two gases to the surface of the substrates in the thoroughly mixed state.
- the CVD apparatus of the present invention is not limited to such a specific construction but it is also possible to form the space 18 by forming a projecting plate different from the inner tube holding part 10 a on the inner wall surface of the flange 10 so as to define the sidewall surface of the space 18 .
- the inner tube holding part 10 a is not used for the wall of the space 18 .
- conduit member 15 connected to the gas ejection ports of the gas introducing nozzles 12 a and 12 b to in place of the guide part of the present invention as shown in FIG. 5A such that the conduit 15 merges the gas introducing nozzles 12 a and 12 b and ejects the mixed gas in the generally horizontal direction along the inner surface of the flange sidewall.
- the interior of the conduit 15 serves for the space 18 a for mixing two different gases.
- the two gases of different kinds respectively introduced from the gas introducing nozzles 12 a and 12 b are ejected generally in the horizontal direction along the sidewall inner surface of the flange 10 after being thoroughly mixed in the space 18 a inside the conduit member 15 , it becomes possible to supply the thoroughly mixed gas to the surface of the substrates 2 disposed in the boat 4 from the bottom part thereof to the top part thereof, and it becomes possible to form a film of excellent in-plane uniformity on the surface of the substrate 2 .
- conduit block 15 a shown in FIG. 5B in which the gas introducing nozzles 12 a and 12 b are merged inside and includes a flow path for ejecting the mixed gas of the two gases in the generally horizontal direction along the inner wall surface of the flange 10 . In this case, too, it is possible to attain the effect similar to the one obtained by using the conduit member 15 .
- the in-plane uniformity of the film formed on the substrates 2 is improved further by introducing the N 2 O gas from the gas introducing nozzle 12 b at the upstream side and by introducing the silane family gas from the gas introducing nozzle 12 a of the downstream side similarly to the case of FIGS. 1A and 1B that uses the guide part 14 of FIG. 2 , because of the further improved efficiency of mixing these two gases.
- FIGS. 6A and 6B show the construction of a CVD apparatus according to another embodiment of the present invention, wherein FIG. 6A shows the overall cross-sectional view while FIG. 6B is an enlarged cross-sectional view taken along a B-B′ line of FIG. 6A .
- the CVD apparatus includes a single gas introducing nozzle in one part of the sidewall surface of the flange 10 , wherein it will be noted that the gas introducing nozzle 13 includes a gas ejection port 13 a bent in an L-shaped form in the region inside the flange 10 .
- the gas ejection part 13 a ejects the gas along the sidewall inner surface of the flange 10 generally in a horizontal direction.
- a mixed gas supplying part 20 from outside such that the mixed gas supplying part 20 can supply a mixed gas containing the silane family gas and the N2O gas with a proportion of 1:50.
- the mixed gas supplying part comprises a mixing part 26 that merges other the gas supply paths 22 and 24 respectively supplying the silane family gas and the N 2 O gas and mixes the gases supplied from the gas supply paths 22 and 24 , wherein the mixing part 26 is connected to a gas introducing nozzle 13 .
- the mixed gas mixed thoroughly in the mixing part 26 of the mixed gas supplying part 20 is ejected generally horizontally along the sidewall inner surface of the flange 10 , and it becomes possible to form a uniform film on the surface of the substrates held in the boat 4 , similarly to the CVD apparatus explained with reference to FIGS. 1A and 1B that uses the guide part 14 of FIG. 2 .
- FIG. 7 it is also possible to connect a nozzle 27 to the mixed gas supplying part 20 so as to eject the mixed gas toward the central part of the flange 10 similarly to the embodiment of FIGS. 1A and 1B that uses the guide part 14 of FIG. 2 .
- the guide part 14 is disposed in the vicinity of the gas ejection port of the nozzle 27 and the mixed gas introduced from the gas introducing nozzle 27 is caused to flow along the sidewall inner surface of the flange 10 similarly to he embodiment of FIGS. 1A and 1B .
- the present invention is based on Japanese priority application No. 2005-267892 filed on Sep. 15, 2005, the entire contents of which are incorporated herein as reference.
Abstract
Description
- The present invention generally relates to a CVD (chemical vapor deposition) apparatus used for forming a film such as a silicon oxide film or a silicon nitride film on a substrate held on a boat at elevated temperatures in a processing space filled with a gas mixture of two gases of different kinds, such as a silane family gas and an N2O gas, under a reduced pressure environment.
- First, a low-pressure CVD apparatus (referred to hereinafter as LPCVD) according to a related art of the present invention will be explained.
-
FIGS. 8A and 8B shows an example of a CVD apparatus according to a related art, whereinFIG. 8A shows the overall construction of the CVD apparatus, whileFIG. 8B shows the CVD apparatus in an enlarged cross-sectional view taken along a line C-C′ ofFIG. 8B . - Referring to
FIGS. 8A and 8B , the CVD apparatus includes, at a central part thereof, aboat 104 forholding substrates 102, which may be a semiconductor substrate, on which film formation is to be made. Theboat 104 is supported on aflange 110 having a circular shape in a plan view, and thus, the bottom part of theboat 104 is supported on theflange 110. - Further, an
inner tube 106 of cylindrical shape is disposed so as to surround theboat 104, wherein theinner tube 106 is held by an innertube holding part 110 a of theflange 110 provided for holding theinner tube 106. Here, the innertube holder part 110 a is a plate-like member projecting from the inner surface of the flange sidewall inward with a predetermined separation from the bottom surface of theflange 110. - Further, there is disposed an
outer tube 108 at the outside of theinner tube 106 so as to enclose theinner tube 106 entirely, wherein theouter tube 108 is held by an outertube holding part 110 b of theflange 110. - Further, there are provided two
gas introducing nozzles flange 110 and the innertube holding part 110 a of theflange 110, wherein thegas introducing nozzles inner tube 106. Thereby, thegas introducing nozzles flange 110, with a distance of about several centimeters. - Further, there is provided a
gas evacuation port 116 on the flange sidewall in the part between the innertube holder part 110 a and the outertube holder part 110 b, wherein thegas evacuation port 16 is connected to a pump (not illustrated), and the gas inside theouter tube 108 is evacuated therefrom through thegas evacuation port 116 by the pump. - With the CVD apparatus of
FIGS. 8A and 8B , two gases ejected respectively from thegas introducing nozzles inner tube 106 and film formation is conducted on the surface of thesubstrates 102. - More specifically, the gases introduced from the
gas introducing parts substrate 102 held in theboat 104 at the bottom part thereof and moves through theinner tube 106 in the upward direction. The gas reached the top part of theinner tube 106 is then evacuated from thegas evacuation port 116 to the outside of the apparatus by the pump after flowing through the space between theinner tube 106 and theouter tube 108. - With this CVD apparatus, it should be noted that the
gas introducing nozzles flange 110 for facilitating mixing of the two gases thus introduced therefrom. - Further, as shown in
FIG. 9 , there is proposed a construction in the related art in which an L-shapedgas introducing nozzle 134 is provided such that the gas ejection port of thenozzle 134 points upward to the ceiling of theouter tube 108. With this construction, the gases are injected in the upward direction for facilitating mixing of the two gases. Reference should be made toPatent Reference 1, for example. - With such CVD apparatuses of
FIGS. 8A and 8B , however, there remains the problem that mixing of the gases tends to become poor and non-uniform in the vertical direction, and thus, there has been the need of providing a temperature gradient in the vertical direction along theboat 104. - In order to attend to the foregoing problem and to facilitate mixing of the two gases, there is a proposal to provide four nozzles for the gas introducing nozzles, such that two of the gas introducing nozzles are provided so as to project from the inner surface of the flange sidewall with a distance of several centimeters and such that the remaining two gas introducing nozzles are formed to have the L-shaped form pointing the ceiling of the outer tube. Thereby, the parts pointing the ceiling of the outer tube extend to the top part of the boat and the gas ejection port is formed at a level corresponding to the top part of the boat. Reference should be made to
Patent Reference 1, for example. - With the CVD apparatus shown in
Patent Reference 1, on the other hand, the two nozzles projecting from the sidewall surfaces of the flange toward the flange central part are used solely for the film formation on the substrates placed in the lower part of the boat, while the L-shaped nozzles are used solely for the film formation on the substrates placed in the upper part of the boat. -
PATENT REFERENCE 1 Japanese Laid-Open Patent Application 1-251725 - In such a LPCVD apparatus of such vertical type, it is generally easy to carry out film formation on the substrate surface with an in-plane uniformity of 3% or less in terms of film thickness. On the other hand, in the case of forming an oxide film on a substrate surface by mixing a silane family gas and an N2O gas, it has been difficult to attain the in-plane uniformity of smaller than 5% because of poor gas mixing at the bottom part of the boat.
- Because
Patent Reference 1 has the main objective of attaining uniformity of film thickness between the top part of the boat and the bottom part of the boat, the LPCVD apparatus uses the same nozzles that are used in the conventional LPCVD apparatus of vertical type at the bottom part of the boat. Thus, even when there is provided improvement to use the L-shaped nozzles, the in-plane uniformity of film thickness is not improved for the substrates placed at the bottom part of the boat. - Because there are cases in which the films thus formed by the CVD process are used for capacitor elements, there arises a problem that the variation of film thickness and film quality affects directly on the performance of the capacitor element in terms of the variation of the capacitance value.
- Thus, it is very important to improve the uniformity of the films formed on the substrates disposed at the lowermost part of the boat with regard to the film thickness and film quality, for stable and reliable production of semiconductor products.
- Thus, it is an object of the present invention to improve, in a vertical CVD apparatus, in-plane uniformity of a film formed on a substrate.
- According to a first aspect, the present invention provides a CVD apparatus, comprising:
- a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction;
- an inner tube extending in said vertical direction and provided so as to surround said boat laterally;
- an outer tube surrounding said inner tube laterally from outside, said outer tube further covering a top part of said inner tube;
- a flange holding said inner tube and outer tube at respective bottom ends thereof;
- gas introducing nozzles provided on a flange sidewall at two locations thereof, said gas introducing nozzles introducing gases from outside to an interior of said inner tube at respective gas ejection ports; and
- a gas evacuation part evacuating a gas in said outer tube to outside thereof;
- wherein there is provided a guide part in the vicinity of said gas ejection ports of said gas introducing nozzles such that said gases ejected from said respective gas ejection ports are caused to flow generally parallel to a bottom surface of said flange along an inner surface of said flange sidewall.
- Because the guide part is provided in the vicinity of the gas introducing nozzles with the CVD apparatus of the present invention, the two gases introduced from the respective gas introducing nozzles are mixed thoroughly with each other as they are caused to flow in the direction generally parallel to the bottom surface of the flange along the inner surface of the flange sidewall.
- In a preferred embodiment, the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the flange sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of the flange sidewall
- According to the present invention, it is possible to form a guide structure of the gas mixture with low cost. For example, such a guide structure may be formed by using a stainless steel plate bent in an L-shaped form.
- Here, “rectangular surface” includes, in addition to a plate of a rectangular shape, other plates such as a plate having a curved edge surface, as long it can provide a similar effect when used in place of the plate of the rectangular shape.
- In a further preferred embodiment, the flange comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided, the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the sidewall and the guide part forming together a mixing space for mixing the gases to form a mixed gas, the mixing space further causing to flow the mixed gas along the inner surface of the sidewall surface.
- By forming the mixing space by the projecting plate, the bottom surface of the flange inside the sidewall, the inner surface of the flange sidewall and the guide part, it becomes possible to achieve more reliable mixing of the gases.
- In a further preferred embodiment, the projecting plate forms a holder holding the inner tube.
- By using the projecting plate for the holder holding the inner tube, it becomes possible to form the flow path along the inner surface of the flange sidewall with a simple construction.
- In a further preferred embodiment, the guide part comprises a conduit connected to the respective gas ejection ports of the gas introducing nozzles so as to merge the gases ejected from the respective ejection ports. Thereby, the gases are mixed with each other to form a mixed gas and are ejected in the direction generally parallel to the bottom surface of the flange along the inner surface of the flange sidewall.
- In a further preferred embodiment, the gas introducing nozzles introduce a silane family gas and an N2O gas to the interior of the inner tube respectively. Here, the silane family gas includes any of monosilane, disilane, dichlorosilane, and the like.
- In conventional CVD apparatuses, it has bee difficult to mix such silane family gas with an N2O gas, and because of this, it has been difficult to attain satisfactory in-plane uniformity for the film formed with these gases in terms of film thickness and film quality.
- With the CVD apparatus of the present invention, it is possible to supply a thoroughly mixed gas of the silane family gas and the N2O gas to the entire surface of the substrates, and thus, it becomes possible to cause the CVD reaction more efficiently and uniformly as compared with the conventional CVD apparatus. Thereby, it becomes possible to improve the uniformity of the film formed by using the silane family gas and the N2O gas in terms of film thickness and film quality.
- In the case of using the silane family gas and the N2O gas, it is preferable that the gas introducing nozzles are provided at a same height as measured from a bottom surface of the flange. Further, it is preferable that one of the gas introducing nozzles located at an upstream side with regard to the other of the gas introducing nozzles in a direction of a flow of the mixed gas along the inner surface, is used to introduce the N2O gas, and the other gas introducing nozzle is used to introduce the silane family gas.
- In the case of using a mixture of silane family gas and an N2O gas in an LPCVD apparatus, it is generally accepted that use of a mixing ratio of 1:40-1:60 (silane gas: N2O gas ratio) is preferable in terms flow rate ratio. With such a flow rate ratio, the silane family gas is supplied only with a small amount as compared with the N2O gas, and thus, it is preferable to introduce the silane family gas from the gas introducing nozzle provided in the downstream side of the gas flow path formed along the inner wall of the flange sidewall and to introduce the N2O gas from the gas introducing nozzle provided at the upstream side of the gas flow direction, in view of the fact that the gas introducing nozzle at the upstream side introduces the N2O gas with an overwhelming flow rate as compared with the silane family gas. With such a construction, the silane family gas is carried by the N2O gas and efficient mixing takes place between the silane gas and the N2O gas as the silane gas is carried by the N2O gas of large flow rate.
- In a second aspect, the present invention provides a CVD apparatus, comprising:
- a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction;
- an inner tube extending in said vertical direction and provided so as to surround said boat laterally;
- an outer tube surrounding said inner tube laterally from outside, said outer tube further coveting a top part of said inner tube;
- a flange holding said inner tube and outer tube at respective bottom ends thereof;
- a gas introducing nozzle provided on a flange sidewall, said gas introducing nozzle introducing a gas from outside to an interior of said inner tube at a gas ejection port;
- a gas evacuation part evacuating a gas in said outer tube to outside thereof;
- a mixed gas supplying part provided outside said flange, said mixed gas supplying part comprising: two gas supplying paths respectively supplying different gases therethrough; a mixing part merging said two gas supplying paths with each other, said mixing part mixing said gases supplied from said respective gas supplying paths to form a mixed gas; and a single gas flow path supplying said mixed gas to one of said gas introducing nozzles connected thereto; and
- a guide part provided in the vicinity of said gas ejection port of said gas introducing nozzle such that said mixed gas ejected from said gas ejection port is caused to flow generally parallel to a bottom surface of said flange along an inner surface of said flange sidewall.
- According to the second aspect, in which the two gases are pre-mixed before being introduced into the CVD apparatus, it becomes possible to supply a thoroughly mixed gas to the surface of the substrates with reliability.
- In a preferred embodiment of the second aspect, the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of said sidewall
- According to the present invention, it is possible to form the guide part with low cost. For example, such a guide part may be formed by using a stainless steel plate bent in an L-shaped form.
- In a further preferred embodiment of the second aspect, the flange further comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided, the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the flange sidewall and the guide part forming together a flow deflection part for causing the mixed to flow gas along the inner surface of the sidewall surface.
- In this case too, it is possible to use the inner tube holding part holding the inner tube for the projecting plate.
- Further, in the second aspect of the present invention, the guide part may comprise a conduit connected to the gas ejection port of the gas introducing nozzle, the conduit discharging the mixed gas in the direction generally parallel to the bottom surface of the flange along the inner surface of the sidewall.
- Further, the gas introducing nozzle may introduce a mixture of a silane family gas and an N2O gas to the interior of the inner tube as the mixed gas also in this second aspect of the present invention.
- According to the first aspect of the present invention, in which the CVD apparatus comprises a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction; an inner tube extending in said vertical direction and provided so as to surround said boat laterally; an outer tube surrounding said inner tube laterally from outside, said outer tube further covering a top part of said inner tube; a flange holding said inner tube and outer tube at respective bottom ends thereof; gas introducing nozzles provided on a flange sidewall at two locations thereof, said gas introducing nozzles introducing gases from outside to an interior of said inner tube at respective gas ejection ports; and a gas evacuation part evacuating a gas in said outer tube to outside thereof; wherein there is provided a guide part in the vicinity of said gas ejection ports of said gas introducing nozzles such that said gases ejected from said respective gas ejection ports are caused to flow generally parallel to a bottom surface of said flange along an inner surface of said flange sidewall, it becomes possible to supply the gases introduced from the two gas introducing nozzles to the surface of the substrates held on the boat after through mixing in the vicinity of the bottom of the flange. With this, improvement is attained with regard to the uniformity of film thickness and film quality for the films formed on the surface of the plural substrates placed on the boat. Further, because the thoroughly mixed gas is caused to flow along the inner surface of the flange sidewall with the action of the guide part, it becomes possible to supply the thoroughly mixed gas to the surface of the substrate held at the top part of the boat from the bottom part of the boat, and it becomes possible to achieve uniform film formation.
- Further, by configuring the CVD apparatus such that the guide part includes two rectangular surfaces sharing respective edges with each other, such that one of the rectangular surfaces is disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces is disposed generally perpendicular to the inner surface of said sidewall, the construction of the guide part is simplified and it becomes possible to provide the guide part with low cost.
- Further, by configuring the CVD apparatus such that the flange further comprises a projecting plate projecting from the inner surface of the flange sidewall in a direction toward a central part of the flange in a part thereof where at least the guide part is provided such that the projecting plate, a bottom surface of the flange inside the flange sidewall, the inner surface of the flange sidewall and the guide part form together a mixing space for mixing the gases, the mixed gas is caused to flow along the inner surface of said sidewall surface and it becomes possible to mix the two gases thoroughly. Thereby, it becomes possible to improve the in-plane uniformity of the film formed on the substrate surface in terms of film thickness and film quality.
- Further, by using a holder holding the inner tube for projecting plate, there is no need of providing a dedicated projecting plate for forming the mixing space, and it becomes possible reduce the cost of the CVD apparatus.
- Further, it becomes possible with the CVD apparatus of the present invention to mix a silane family gas and an N2O gas thoroughly, and it becomes possible to improve the in-plane uniformity of the film formed by using a silane family gas and the N2O gas in terms of film thickness and film uniformity.
- Further, by providing one of the gas introducing nozzles used for introducing the N2O gas to be located at an upstream side with regard to the other of the gas introducing nozzles used for introducing the silane family gas in the direction of the flow of the mixed gas along the inner surface of the flange sidewall, the silane family gas supplied with a small amount is mixed thoroughly with the N2O gas supplied with large amount as it is carried by the N2O gas, and mixing of the silane family gas and the N2O gas is facilitated further. With this, in-plane uniformity is improved further for the films formed on the surface of the substrates held on the boat.
- According to the second aspect of the present invention, in which the CVD apparatus comprises a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that said substrates are aligned in the vertical direction; an inner tube extending in said vertical direction and provided so as to surround said boat laterally; an outer tube surrounding said inner tube laterally from outside, said outer tube further covering a top part of said inner tube; a flange holding said inner tube and outer tube at respective bottom ends thereof; a gas introducing nozzle provided on a flange sidewall, said gas introducing nozzle introducing a gas from outside to an interior of said inner tube at a gas ejection port; a gas evacuation part evacuating a gas in said outer tube to outside thereof; a mixed gas supplying part provided outside said flange, said mixed gas supplying part comprising: two gas supplying paths respectively supplying different gases therethrough; a mixing part merging said two gas supplying paths with each other, said mixing part mixing said gases supplied from said respective gas supplying paths to form a mixed gas; and a single gas flow path supplying said mixed gas to one of said gas introducing nozzles connected thereto; and a guide part provided in the vicinity of said gas ejection port of said gas introducing nozzle such that said mixed gas ejected from said gas ejection port is caused to flow generally parallel to a bottom surface of said flange along an inner surface of said flange sidewall, the two gases are introduced into the CVD apparatus and reach the surface of the substrates held therein in the state that the two gases are mixed thoroughly already.
- With this, it becomes possible to improve the in-plane uniformity of the film formed on the surface of the substrates in terms of film thickness and film quality.
- Further, because the mixed gas introduced into the apparatus forms a flow at the bottom of the flange along the inner surface of the flange sidewall with the action of the guide part, it becomes possible to supply the thoroughly mixed gas to the surface of the substrate held on the top part of the boat from the bottom of the boat, and it becomes possible to achieve uniform film formation.
- In the foregoing second aspect too, the construction of the guide part is simplified and it becomes possible to provide the guide part with low cost, by configuring the CVD apparatus such that the guide part includes two rectangular surfaces sharing respective edges with each other, one of the rectangular surfaces being disposed generally parallel to the inner surface of the sidewall, the other of the rectangular surfaces being disposed generally perpendicular to the inner surface of said sidewall.
- Further, with the second aspect, too, it becomes possible to mix the two gases thoroughly and achieve uniform film formation by supplying the thoroughly mixed gas to the surface of the substrate held on the top part of the boat from the bottom of the boat, by configuring the CVD apparatus such that the flange further comprises a projecting plate projecting from the inner surface of the sidewall in a direction toward a center of the flange in a part thereof where at least the guide part is provided, and such that the projecting plate, a bottom surface of the flange inside the sidewall, the inner surface of the sidewall and the guide part form together a mixing space for mixing the gases to form a mixed gas, the mixing space further causing to flow the mixed gas along the inner surface of said sidewall surface.
- Further, by using a holder holding the inner tube for projecting plate, there is no need of providing a dedicated projecting plate for forming the mixing space, and it becomes possible reduce the cost of the CVD apparatus.
- Further, it is possible to form the guide part also easily and with low cost by forming the guide part such that the guide part comprises a conduit connected to the gas ejection port of the gas introducing nozzle and cause the conduit to discharge the mixed gas in the direction generally parallel to the bottom surface of the flange along the inner surface of the sidewall.
- Further, by using a silane family gas and the N2O gas for the two gases, it becomes possible to cause through mixing in these gases, which has been difficult to achieve with the conventional CVD apparatus. Thus, it becomes possible to improve the in-plane uniformity for the film formed on the substrate surface by using these gases in terms of film thickness and film quality.
-
FIGS. 1A and 1B are diagrams showing the construction of a CVD apparatus according to an embodiment of the present invention respectively in an overall cross-sectional view and an enlarged cross-sectional view taken along a line A-A′ ofFIG. 1A ; -
FIG. 2 is an enlarged oblique view diagram showing an example of a guide part; -
FIG. 3 is a graph showing the relationship between the location of the substrate in a boat and the in-plane uniformity of the film formed on such a substrate; -
FIG. 4 is a graph showing the relationship between the location of the substrate in a boat and the refractive index of the film formed on such a substrate; -
FIGS. 5A and 5B are cross-sectional diagrams showing another embodiment of the CVD apparatus of the present invention; -
FIGS. 6A and 6B are cross-sectional diagrams showing a further embodiment of the CVD apparatus of the present invention; -
FIG. 7 is a cross-sectional diagram showing another embodiment of the CVD apparatus of the present invention; -
FIGS. 8A and 8B are cross-sectional diagrams showing an example of a CVD apparatus according to a related art of the present invention; -
FIG. 9 is a cross-sectional diagram showing another example of a CVD apparatus according to a related art of the present invention; - Hereinafter, the present invention will be described with reference to
FIGS. 1A and 1B showing the construction of a CVD apparatus according to a preferred embodiment of the present invention, whereinFIG. 1A shows the CVD apparatus in an overall cross-sectional view whileFIG. 1B shows the CVD apparatus in an enlarged cross-sectional view taken along a line A-A′ ofFIG. 1A . - Referring to
FIGS. 1A and 1B , the CVD apparatus includes aboat 4 at a central part thereof for holdingsubstrates 2 on which film formation is to be made, wherein thesubstrates 2 may be a semiconductor substrate. Theboat 4 is formed of a quartz glass, for example, and holds therein fiftysubstrates 2 from the bottom part thereof to the top part thereof in a manner that eachsubstrate 2 is laid horizontally. - Further, there is disposed a
flange 10 of circular cross-sectional shape below theboat 4 wherein the bottom part of theboat 4 is supported by theflange 10. - Surrounding the
boat 4, there is disposed aninner tube 6 in a manner supported by an innertube holding part 10 a formed on theflange 10. The innertube holding part 10 a is a donuts-shaped circular plate member projecting from the sidewall of theflange 10 toward a central part thereof, wherein innertube holding part 10 a is formed with a separation from the bottom surface of theflange 10. - Further, surrounding the
inner tube 6, there is provided anouter tube 8 of cylindrical form such that theouter tube 8 surrounds theinner tube 6 with a separation therefrom, wherein theouter tube 8 is held by an outertube holding part 10 b of theflange 10 formed at a level higher than the innertube holding part 10 a with reference to the bottom surface of theflange 10. - In order to introduce gases of two kinds, such as a silane family gas and an N2O gas, the
flange 10 is provided with twogas introducing nozzles tube holding part 10 a, wherein the twogas introducing nozzles flange 10. Thereby, thegas introducing nozzles flange 10. - Further, with the CVD apparatus of the present embodiment, there is disposed a
guide part 14 between the bottom surface and the innertube holding part 10 a of theflange 10 in the vicinity of the gas ejection ports of thegas introducing nozzles - More specifically, the
guide part 14 is provided such that the upper edge thereof makes a contact with the bottom surface of the innertube holding part 10 a and the bottom edge of theguide part 14 makes a contact with the bottom surface of theflange 10. - The
guide part 14 is formed of tworectangular surfaces rectangular surface 14 a is formed generally perpendicular to the direction of gas ejection of thegas introducing nozzles flange 10 or flange sidewall so as to deflect the flow of the gases introduced from thegas introducing nozzles - The
rectangular surface 14 a is curved along the inner surface of the flange sidewall while therectangular surface 14 b is provided generally perpendicular to the inner surface of the flange sidewall in a manner fixed to the flange sidewall at the side of thegas introducing nozzle 12 b. - With this embodiment, the
guide part 14 is formed by bending a stainless steel plate of the thickness of 2 mm in a generally L-shaped form. By using such a generally U-shaped plate member, it is possible to provide theguide part 14 simply with low cost. - Further, the
gas exhaust part 16 is provided on the flange sidewall at a level higher than the innertube holding part 10 a with reference to the bottom surface of theflange 10. Thegas exhaust part 16 is connected to a pump (not illustrated) and the gas inside theouter tube 8 is evacuated by the pump. Further, by driving the pump, the space inside the outer tube 8 (the space inside the CVD apparatus) is held to a low pressure state. - With this embodiment, the
guide part 14 is disposed such that therectangular surface 14 a makes a contact with the innermost edge surface of the innertube holding part 10 a as shown inFIG. 2 , while therectangular surface 14 b, formed with a smaller height as compared with therectangular surface 14 a, is inserted between the lower surface of the innertube holding part 10 a and the bottom surface of theflange 10. Thus, there is formed aspace 18 in the vicinity of the gas ejection ports of thegas introducing nozzles 12 and 12 b in the manner surrounded by the bottom surface of theflange 10, the flange sidewall and therectangular surfaces guide part 14. - With this, the two gases respectively introduced from the
gas introducing nozzles space 18 and the resultant mixed gas is caused to flow along the inner surface of the flange sidewall after being ejected generally in the horizontal direction. - Because the
rectangular surface 14 b of theguide pat 14 is formed generally perpendicular to the sidewall inner surface of theflange 10, the gases introduced from thegas introducing nozzles - With reference to the direction of the gas flow thus formed along the sidewall surface of the
flange 10, thegas introducing nozzle 12 b is located at an upstream side while thegas introducing nozzle 12 a is located at a downstream side of thegas introducing nozzle 12 b. - With such a CVD apparatus that uses two gases, the one being introduced at an upstream side in terms of the gas flow direction and the other being introduced at a downstream side, it is preferable to introduce the gas of smaller flow rate from the
gas introducing nozzle 12 a and to introduce the gas of larger flow rate from thegas introducing nozzle 12 b in the event the first gas is introduced with larger flow rate as compared with the other gas. Thereby, the gas introduced from thegas introducing nozzle 12 a of the downstream side with small flow rate is carried by the gas introduced from thegas introducing nozzle 12 b at the upstream side with large flow rate, these two gases are mixed efficiently and thoroughly as the gas from thenozzle 12 a is carried by the gas from thenozzle 12 b. - In the case of using a silane family gas with an N2O gas, it is generally accepted that use of the mixing ratio of 1:40-1:60 is preferable for the silane family gas and the N2O gas (silane family gas: N2O gas) in terms of the flow rate. Thus, with this embodiment, the SiH4 gas is introduced from the
gas introducing nozzle 12 a and the N2O gas from thegas introducing nozzle 12 b in such a manner that the SiH4 gas is mixed with 25 cc/m and the N2O gas with 1225 cc/m. - Further, while not illustrated, the CVD apparatus includes, in addition to the structure explained above, other mechanisms such as a port elevator that pulls down the heater heating the interior of the apparatus and the
boat 4 for enabling taking out or loading of thesubstrates 2. - Next, the operation of the CVD apparatus of the foregoing embodiment will be described.
- With this embodiment, the heaters are used to heat the
boat 4 such that theboat 4 shows the temperature of 823° C., 803° C., 798° C. and 793° C. at four measuring points defined from the top part to the bottom part of theboat 4 with an equal distance. Further, the pressure inside the apparatus is set to 0.1 kPa by using the pump. - Further, a SiH4 gas and a N2O gas are used for the two gases, and thus, the SiH4 gas is introduced from the
gas introducing nozzle 12 a while the N2O gas is introduced from thegas introducing nozzle 12 b. - Thus, the SiH4 gas and the N2O gas are introduced into the CVD apparatus respectively from the
gas introducing nozzles flange 10. - Thereby, the respective gases thus ejected from the gas ejection ports of the
gas introducing nozzles guide part 14, and the like, and the mixed gas formed as a result of mixing of the SiH4 gas and the N2O gas is caused to flow along the inner surface of the flange sidewall. Thereafter, the mixed gas is flows in theinner tube 6 in the upward direction. After reaching the top part of theouter tube 8, the mixed gas flows to thegas evacuation part 16 through the space between theouter tube 8 and theinner tube 6 and is discharged to the outside of the apparatus by the pump. - As explained above, the CVD apparatus can mix the two gases ejected from the respective,
different nozzles space 18 in the vicinity of the respective gas ejection ports of thegas introducing nozzles - Because of the shape of the
guide 14 forming thespace 18, the mixed gas is ejected generally horizontally from thespace 18 and flows along the inner surface of the flange sidewall at the bottom of theflange 10. With this, a thoroughly mixed gas is supplied from the bottom part to the top part of theboat 4, and it becomes possible to form a uniform film on the surface of theplural substrates 2 held in theboat 4 in the manner aligned from the bottom part thereof to the top part thereof. -
FIGS. 3 and 4 are graphs showing the relationship between the height of the substrate in the boat (processing height) and the in-plane uniformity of the film formed on the substrate surface, whereinFIG. 3 shows the in-plane uniformity of the film thickness whileFIG. 4 shows the in-plane uniformity of the refractive index of the case of irradiating a light to the film. InFIG. 3 , it should be noted that horizontal axis represents the processing position of the substrate to be measured (height in the boat), wherein it should be noted that TOP represents the top part of the boat, CNT represents the center of the boat, and BTM represents the bottom of the boat bottom. On the other hand, the vertical axis represents the in-plane uniformity (%) of the film formed on the surface of the semiconductor substrate. Further, inFIG. 4 , the horizontal axis represents the processing position of the substrate to be measured while the vertical axis represents the in-plane uniformity (%) of the refractive index of the film formed on the surface of the semiconductor substrate. - In
FIG. 3 , it should be nodded that the data (X) represented by the broken line represents in-plane uniformity of film thickness of the film formed in the vicinity of the nozzle 12 without forming theguide part 14, the date (Y) represented by the one-dotted line represents in-plane uniformity of film thickness of the film for the case theguide part 14 is disposed in the vicinity of the nozzle 12 and film formation is conducted by introducing the SiH4 gas from theupstream side nozzle 12 b, while the data (Z) represented by the continuous line represents in-plane uniformity of film thickness of the film formed by disposing theguide part 14 in the vicinity of the nozzle 12 and introducing the SiH4 gas from thenozzle 12 a at the downstream side similarly to the case of the CVD apparatus ofFIGS. 1 and 2 . - In
FIG. 4 , the data (X) represented by the broken line represents in-plane uniformity of refractive index of the film formed in the vicinity of the nozzle 12 for the case not forming theguide part 14, while the data (Y) represented by the continuous line represents in-plane uniformity of refractive index of the film formed by disposing theguide part 14 in the vicinity of the nozzle 12 and introducing the SiH4 gas from thenozzle 12 a at the downstream side similarly to the case of the CVD apparatus ofFIGS. 1 and 2 . - Here, it should be noted that the in-plane uniformity A1(%) for the film thickness and the in-plane uniformity A2(%) for the refractive index of
FIGS. 3 and 4 are calculated according to Equations (1) and (2) below:
A 1=(maximum film thickness−minimum film thickness)/2/average in-plane film thickness×100 (1)
A 2=(maximum refractive index−minimum refractive index)/2/average in-plane refractive index×100 (2) - Thereby, it should be noted that the refractive index shown in
FIG. 4 for the case of irradiating optical radiation to the film represents the film quality, and thus, it is indicated that a film of more uniform film quality is obtained when the in-plane variation of the refractive index has become smaller. - From
FIGS. 3 and 4 , it can be seen that the in-plane uniformity is improved for the film formed on the substrate with regard to the film thickness and film quality by disposing theguide part 14 in the vicinity of the gas ejection ports of thegas introducing nozzles boat 4. Further, as shown inFIG. 3 , it can be seen that the in-plane uniformity of the film thickness is improved by about 0.3% for the film formed on the substrate surface by introducing the SiH4 gas from thegas introducing nozzle 12 a at the lower stream side and by introducing the N2O gas from the upstream side. - Because the present embodiment uses only the L-shaped stainless steel plate for the
guide part 14 and forms the space for mixing the two gases by using the innertube holding part 10 a, it becomes possible to build a CVD apparatus capable of supplying the two gases to the surface of the substrates in the thoroughly mixed state. - Further, it should be noted that, while the present embodiment forms the
space 18 by using the bottom surface and sidewall surface of theflange 10, the innertube holding part 10 a and theguide part 14, the CVD apparatus of the present invention is not limited to such a specific construction but it is also possible to form thespace 18 by forming a projecting plate different from the innertube holding part 10 a on the inner wall surface of theflange 10 so as to define the sidewall surface of thespace 18. In this case, the innertube holding part 10 a is not used for the wall of thespace 18. Further, it is also possible to form the sidewall surface of thespace 18 without providing the innertube holding part 10 a or providing a member that replaces the innertube holding part 10 a. - This applies also to the embodiments explained later with reference to
FIG. 7 . - In the case of not using the L-shaped stainless steel plate for the
guide part 14, it is also possible to provide aconduit member 15 connected to the gas ejection ports of thegas introducing nozzles FIG. 5A such that theconduit 15 merges thegas introducing nozzles conduit 15 serves for thespace 18 a for mixing two different gases. - In the case of using the
conduit member 15 for the guide part, the two gases of different kinds respectively introduced from thegas introducing nozzles flange 10 after being thoroughly mixed in thespace 18 a inside theconduit member 15, it becomes possible to supply the thoroughly mixed gas to the surface of thesubstrates 2 disposed in theboat 4 from the bottom part thereof to the top part thereof, and it becomes possible to form a film of excellent in-plane uniformity on the surface of thesubstrate 2. - Further, it is possible to use, in place of the
conduit member 15, aconduit block 15 a shown inFIG. 5B , in which thegas introducing nozzles flange 10. In this case, too, it is possible to attain the effect similar to the one obtained by using theconduit member 15. - In any of the cases of using the
conduit member 15 and the conduit block 15 a, the in-plane uniformity of the film formed on thesubstrates 2 is improved further by introducing the N2O gas from thegas introducing nozzle 12 b at the upstream side and by introducing the silane family gas from thegas introducing nozzle 12 a of the downstream side similarly to the case ofFIGS. 1A and 1B that uses theguide part 14 ofFIG. 2 , because of the further improved efficiency of mixing these two gases. - While the embodiment explained above shows the construction of the CVD apparatus in which the two gases are introduced from two
gas introducing nozzles gas introducing nozzles -
FIGS. 6A and 6B show the construction of a CVD apparatus according to another embodiment of the present invention, whereinFIG. 6A shows the overall cross-sectional view whileFIG. 6B is an enlarged cross-sectional view taken along a B-B′ line ofFIG. 6A . - Referring to
FIGS. 6A and 6B , the CVD apparatus includes a single gas introducing nozzle in one part of the sidewall surface of theflange 10, wherein it will be noted that thegas introducing nozzle 13 includes agas ejection port 13 a bent in an L-shaped form in the region inside theflange 10. Thus thegas ejection part 13 a ejects the gas along the sidewall inner surface of theflange 10 generally in a horizontal direction. - To the
gas introducing nozzle 13, there is connected a mixedgas supplying part 20 from outside such that the mixedgas supplying part 20 can supply a mixed gas containing the silane family gas and the N2O gas with a proportion of 1:50. - The mixed gas supplying part comprises a mixing
part 26 that merges other thegas supply paths gas supply paths part 26 is connected to agas introducing nozzle 13. - Thus, with the CVD apparatus of the present embodiment, the mixed gas mixed thoroughly in the mixing
part 26 of the mixedgas supplying part 20 is ejected generally horizontally along the sidewall inner surface of theflange 10, and it becomes possible to form a uniform film on the surface of the substrates held in theboat 4, similarly to the CVD apparatus explained with reference toFIGS. 1A and 1B that uses theguide part 14 ofFIG. 2 . - Further, while the illustrated example uses an L-shaped conduit for the
ejection port 13 a, it is also possible to use a conduit block similar to the one shown inFIG. 5B in place of the conduit. - Further, as shown in
FIG. 7 , it is also possible to connect anozzle 27 to the mixedgas supplying part 20 so as to eject the mixed gas toward the central part of theflange 10 similarly to the embodiment ofFIGS. 1A and 1B that uses theguide part 14 ofFIG. 2 . With the construction ofFIG. 7 , theguide part 14 is disposed in the vicinity of the gas ejection port of thenozzle 27 and the mixed gas introduced from thegas introducing nozzle 27 is caused to flow along the sidewall inner surface of theflange 10 similarly to he embodiment ofFIGS. 1A and 1B . - Further, while the present invention is described heretofore for preferred embodiments of the CVD apparatus, the present invention is by no means limited to such embodiments and various variations and modifications may be made within the scope of the invention in terms of size, shape, arrangement, material, and the like.
- The present invention is based on Japanese priority application No. 2005-267892 filed on Sep. 15, 2005, the entire contents of which are incorporated herein as reference.
Claims (13)
Applications Claiming Priority (2)
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JP2005-267892 | 2005-09-15 | ||
JP2005267892A JP4698354B2 (en) | 2005-09-15 | 2005-09-15 | CVD equipment |
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US20070062448A1 true US20070062448A1 (en) | 2007-03-22 |
US7828898B2 US7828898B2 (en) | 2010-11-09 |
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US11/521,216 Expired - Fee Related US7828898B2 (en) | 2005-09-15 | 2006-09-13 | CVD apparatus of improved in-plane uniformity |
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US7828898B2 (en) | 2010-11-09 |
JP2007081186A (en) | 2007-03-29 |
JP4698354B2 (en) | 2011-06-08 |
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