US20040178173A1 - Method for laminating a material layer onto a transparent substrate - Google Patents

Method for laminating a material layer onto a transparent substrate Download PDF

Info

Publication number
US20040178173A1
US20040178173A1 US10/457,933 US45793303A US2004178173A1 US 20040178173 A1 US20040178173 A1 US 20040178173A1 US 45793303 A US45793303 A US 45793303A US 2004178173 A1 US2004178173 A1 US 2004178173A1
Authority
US
United States
Prior art keywords
layer
material layer
transparent substrate
metal
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/457,933
Inventor
Chich Chang
Chi-shen Lee
Shun-Fa Huang
Jung Chang
Wen-Chih Hu
Liang-Tang Wang
Chai-Yuan Sheu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrial Technology Research Institute ITRI
Original Assignee
Industrial Technology Research Institute ITRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrial Technology Research Institute ITRI filed Critical Industrial Technology Research Institute ITRI
Assigned to INDUSTRIAL TECHOLOGY RESEARCH INSTITUTE reassignment INDUSTRIAL TECHOLOGY RESEARCH INSTITUTE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUANG, SHUN-FA, CHANG, JUNG FANG, SHEU, CHAI-YUAN, WANG, LIANG-TANG, HU, WEN-CHIH, LEE, CHI-SHEN, CHANG, CHICH SHANG
Publication of US20040178173A1 publication Critical patent/US20040178173A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • C03C27/042—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts
    • C03C27/046—Joining glass to metal by means of an interlayer consisting of a combination of materials selected from glass, glass-ceramic or ceramic material with metals, metal oxides or metal salts of metals, metal oxides or metal salts only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B32B2310/0825—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using IR radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/02—Noble metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/08—Glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Definitions

  • the present invention relates to a lamination method for a transparent substrate, and in particular to a method for laminating material layers onto transparent substrates.
  • an object of the invention is to provide a method for laminating a material layer onto a transparent substrate.
  • Another object of the invention is to provide a novel lamination method for combining a material layer, such as metal, ceramic, nanomaterial or other material onto transparent substrates with current method.
  • the invention utilizes the heat produced by a metal layer absorbing infrared to chemically bond with an amorphous silicon layer to achieve tight adhesion. That is, when a non-infrared absorbing material is formed on a glass or other transparent substrate, an infrared absorbent thin film, such as Ni, Au, Ag, Pt, Mo, Ta, W, Ti or Co is firstly formed on the material layer. Lamination is then performed. These metals absorb infrared light and generate heat to form metal silicide with an amorphous silicon layer. In addition, the melting points of these metal layers are high enough to withstand the process temperature.
  • This lamination method is effective as it does not require an additional gel material, or coating machine. Furthermore, the lamination method of the invention can be temporary or permanent, hence it is highly applicable in various applications.
  • a major feature of the invention is the formation of an amorphous silicon layer on a transparent substrate, followed by lamination with a material layer having a metal layer formed thereon.
  • the metal layer and the amorphous silicon layer are then exposed to an infrared heater (such as a rapid thermal process) or a laser, because a transparent substrate and amorphous silicon do not absorb infrared light, but a metal layer will.
  • an infrared heater such as a rapid thermal process
  • a laser a laser
  • Conventional etching or laser cutting can be performed to detach the metal layer from the transparent substrate.
  • the method of the invention comprises the following steps of providing a transparent substrate having an amorphous silicon layer formed thereon; forming a metal layer that absorbs infrared on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction, thus laminating and forming a bond between the material layer and the transparent substrate.
  • Examples of material layers are metal, ceramic, nanomaterial or other composite material;
  • the transparent substrate can be glass, quartz, synthetic quartz, LiNbO 3 or LiTaO 3 .
  • FIGS. 1A-1D are cross sections of the embodiment of the invention.
  • a transparent glass substrate 100 having an amorphous layer 105 formed thereon is provided.
  • a glass substrate is used, but other materials, such as quartz synthetic quartz, LiNbO3 or LiTaO3 may also be used.
  • Another material layer 110 having a metal layer 115 formed thereon is provided.
  • the material layer in this embodiment is a metal foil. Other materials that cannot be formed directly on a glass substrate, such as ceramic, nanomaterial or other composite materials are also applicable.
  • the metal layer used in this embodiment is Ni, or another infrared absorbent metal, such as Au, Ag, Pt, Mo, Ta, W, Ti, or Co.
  • insertion of the material layer 110 to laminate the metal layer 115 onto the amorphous layer 105 is followed by exposure to infrared light.
  • the amorphous layer 105 and the metal layer 115 react to form metal silicide 120 .
  • the wavelength of the infrared light is 0.7 ⁇ 1.5 ⁇ m.
  • the material layer and the transparent glass substrate are bonded by the high melting point metal silicide, thus the purpose of this invention, temporary lamination onto a glass substrate, is achieved.
  • wet etching or laser cutting can be performed to separate the material layer from the glass substrate.
  • wet etching is performed to remove the metal silicide.
  • MoSi1, WSi 2 , TiSi 2 can be removed by NH 3 /H 2 O 2 ; TaSi 2 , CoSi 2 , NiSi 2 can be removed by H 2 SO 4 /H 2 O; PtSi can be removed by HCl/HNO 3 .
  • FIG. 1C is a cross section of the material layer 110 being removed by laser cutting, where 150 represents the laser cutter.
  • FIG. 1D is an exploded view of the laser cutting to remove the material layer 110 .
  • the lamination method provided in this invention, no additional gel material or coating machine is required, thereby considerably reducing production cost. Moreover, this lamination method can be used for temporary, permanent, or local lamination.
  • the invention provides a novel solution for laminating materials that cannot be laminated onto transparent substrates. The laminated product exhibits good resistance to high process temperature, and the close bonding between the material and the substrate also meet the requirements of the process. As a result, this method is highly applicable in industry.

Abstract

A method for laminating a material layer onto a transparent substrate. The method includes the steps of: providing a transparent substrate having an amorphous silicon layer formed thereon; forming an infrared absorbent metal layer on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a lamination method for a transparent substrate, and in particular to a method for laminating material layers onto transparent substrates. [0002]
  • 2. Description of the Related Art [0003]
  • In addition to developing flat panel displays with greater display areas, the lighter, thinner, and more flexible characteristics of flat panel displays have also become desirable. One current trend is to substitute glass substrates with plastic substrates. However, many problems, such as low T[0004] g, arise when using plastic substrates, which hinder the required high temperature process, resulting in poor panel performance. Moreover, plastic substrates are poorly suited to the manufacturing process, which induces severe stress, static and large thermal expansion coefficient. Other alternatives of substrate materials include metal, or metal alloy, such as aluminum, titanium or similar. Use of these substrate materials have the advantages of light weight, flexibility, high melting point, no static, lower thermal expansion coefficient, and lower cost. Therefore, these materials demonstrate great potential for use as substrates in flexible reflective panel displays. However, these flexible metal substrates cannot be incorporated into the current process and equipment. Glass must be used as a carrier, which is problematic as it requires temporary lamination of metal with glass, which must be separated in a subsequent step.
  • Current methods for temporary lamination mostly use a high molecular gel, which due to its poor resistance to high temperature, is not suitable for laminating metal and glass. Another lamination material for metal and glass is high temperature silver gel. Coating silver gel, however, is difficult and is not cost effective. As a result, silver gel is not a satisfactory laminating material. [0005]
  • Hence, there is a need for a novel lamination material and method for metal and transparent substrates. [0006]
    • SUMMARY OF THE INVENTION
  • Accordingly, an object of the invention is to provide a method for laminating a material layer onto a transparent substrate. [0007]
  • Another object of the invention is to provide a novel lamination method for combining a material layer, such as metal, ceramic, nanomaterial or other material onto transparent substrates with current method. [0008]
  • In order to achieve the above objects, the invention utilizes the heat produced by a metal layer absorbing infrared to chemically bond with an amorphous silicon layer to achieve tight adhesion. That is, when a non-infrared absorbing material is formed on a glass or other transparent substrate, an infrared absorbent thin film, such as Ni, Au, Ag, Pt, Mo, Ta, W, Ti or Co is firstly formed on the material layer. Lamination is then performed. These metals absorb infrared light and generate heat to form metal silicide with an amorphous silicon layer. In addition, the melting points of these metal layers are high enough to withstand the process temperature. This lamination method is effective as it does not require an additional gel material, or coating machine. Furthermore, the lamination method of the invention can be temporary or permanent, hence it is highly applicable in various applications. [0009]
  • A major feature of the invention is the formation of an amorphous silicon layer on a transparent substrate, followed by lamination with a material layer having a metal layer formed thereon. The metal layer and the amorphous silicon layer are then exposed to an infrared heater (such as a rapid thermal process) or a laser, because a transparent substrate and amorphous silicon do not absorb infrared light, but a metal layer will. As a result, the metal layer reacts with the amorphous silicon layer to form a tight bond, and allow follow-up processes to be efficiently performed. Conventional etching or laser cutting can be performed to detach the metal layer from the transparent substrate. [0010]
  • The method of the invention comprises the following steps of providing a transparent substrate having an amorphous silicon layer formed thereon; forming a metal layer that absorbs infrared on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction, thus laminating and forming a bond between the material layer and the transparent substrate. [0011]
  • Examples of material layers are metal, ceramic, nanomaterial or other composite material; the transparent substrate can be glass, quartz, synthetic quartz, LiNbO[0012] 3 or LiTaO3.
  • A detailed description is given in the following embodiment with reference to the accompanying drawings.[0013]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein: [0014]
  • FIGS. 1A-1D are cross sections of the embodiment of the invention;[0015]
    • DETAILED DESCRIPTION OF THE INVENTION
  • As shown in FIG. 1A, a [0016] transparent glass substrate 100 having an amorphous layer 105 formed thereon is provided. In this embodiment, a glass substrate is used, but other materials, such as quartz synthetic quartz, LiNbO3 or LiTaO3 may also be used. Another material layer 110 having a metal layer 115 formed thereon is provided. The material layer in this embodiment is a metal foil. Other materials that cannot be formed directly on a glass substrate, such as ceramic, nanomaterial or other composite materials are also applicable. The metal layer used in this embodiment is Ni, or another infrared absorbent metal, such as Au, Ag, Pt, Mo, Ta, W, Ti, or Co.
  • Next, as shown in FIG. 1B, insertion of the [0017] material layer 110 to laminate the metal layer 115 onto the amorphous layer 105, is followed by exposure to infrared light. During the exposure, the amorphous layer 105 and the metal layer 115 react to form metal silicide 120. Preferably the wavelength of the infrared light is 0.7˜1.5 μm. In this step of the procedure, the material layer and the transparent glass substrate are bonded by the high melting point metal silicide, thus the purpose of this invention, temporary lamination onto a glass substrate, is achieved.
  • Optionally, after the process described above, wet etching or laser cutting can be performed to separate the material layer from the glass substrate. Preferably wet etching is performed to remove the metal silicide. MoSi1, WSi[0018] 2, TiSi2 can be removed by NH3/H2O2; TaSi2, CoSi2, NiSi2 can be removed by H2SO4/H2O; PtSi can be removed by HCl/HNO3.
  • FIG. 1C is a cross section of the [0019] material layer 110 being removed by laser cutting, where 150 represents the laser cutter. FIG. 1D is an exploded view of the laser cutting to remove the material layer 110.
  • According to the lamination method provided in this invention, no additional gel material or coating machine is required, thereby considerably reducing production cost. Moreover, this lamination method can be used for temporary, permanent, or local lamination. The invention provides a novel solution for laminating materials that cannot be laminated onto transparent substrates. The laminated product exhibits good resistance to high process temperature, and the close bonding between the material and the substrate also meet the requirements of the process. As a result, this method is highly applicable in industry. [0020]
  • While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements. [0021]

Claims (6)

What is claimed is:
1. A method for laminating a material layer onto a transparent substrate, comprising:
providing a transparent substrate having an amorphous silicon layer formed thereon;
forming an infrared absorbent metal layer on the material layer;
inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and
exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.
2. The method as claimed in claim 1, further comprising separating the material layer and the transparent substrate by etching or laser cutting.
3. The method as claimed in claim 1, wherein the transparent substrate is glass, quartz, synthetic quartz, LiNbO3 or LiTaO3.
4. The method as claimed in claim 1, wherein the material layer is s metal, ceramic, nanomaterial, or composite material.
5. The method as claimed in claim 2, wherein the etching is wet etching.
6. The method as claimed in claim 5, wherein the solution for wet etching is any solution that removes metal silicide.
US10/457,933 2003-03-13 2003-06-10 Method for laminating a material layer onto a transparent substrate Abandoned US20040178173A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW092105465A TW582099B (en) 2003-03-13 2003-03-13 Method of adhering material layer on transparent substrate and method of forming single crystal silicon on transparent substrate
TW92105465 2003-03-13

Publications (1)

Publication Number Publication Date
US20040178173A1 true US20040178173A1 (en) 2004-09-16

Family

ID=32960716

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/457,933 Abandoned US20040178173A1 (en) 2003-03-13 2003-06-10 Method for laminating a material layer onto a transparent substrate
US10/628,893 Expired - Fee Related US7045441B2 (en) 2003-03-13 2003-07-28 Method for forming a single-crystal silicon layer on a transparent substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/628,893 Expired - Fee Related US7045441B2 (en) 2003-03-13 2003-07-28 Method for forming a single-crystal silicon layer on a transparent substrate

Country Status (2)

Country Link
US (2) US20040178173A1 (en)
TW (1) TW582099B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013058222A1 (en) * 2011-10-18 2015-04-02 富士電機株式会社 Method for peeling support substrate of solid-phase bonded wafer and method for manufacturing semiconductor device

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909151B2 (en) 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7456476B2 (en) 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7422946B2 (en) 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7176072B2 (en) * 2005-01-28 2007-02-13 Sharp Laboratories Of America, Inc Strained silicon devices transfer to glass for display applications
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US7479421B2 (en) 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
KR101329352B1 (en) * 2007-10-17 2013-11-13 삼성전자주식회사 Method for manufacturing of semiconductor device
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
JP5132534B2 (en) * 2008-12-01 2013-01-30 日本電波工業株式会社 Manufacturing method of optical components
CN104078407B (en) * 2013-03-29 2018-12-04 济南晶正电子科技有限公司 The method of film and manufacture film
FR3007892B1 (en) * 2013-06-27 2015-07-31 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN LAYER WITH THERMAL ENERGY SUPPLY TO A FRAGILIZED AREA VIA AN INDUCTIVE LAYER
JP6699111B2 (en) 2015-08-18 2020-05-27 富士電機株式会社 Semiconductor device and method of manufacturing semiconductor device
CN110391352B (en) * 2018-04-17 2021-12-07 上海和辉光电股份有限公司 Packaging method and structure of flexible display

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826787A (en) * 1986-03-18 1989-05-02 Fujitsu Limited Method for adhesion of silicon or silicon dioxide plate
US5223081A (en) * 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1744365B1 (en) * 1996-08-27 2009-04-15 Seiko Epson Corporation Exfoliating method and transferring method of thin film device
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
JP4085459B2 (en) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
US6387829B1 (en) * 1999-06-18 2002-05-14 Silicon Wafer Technologies, Inc. Separation process for silicon-on-insulator wafer fabrication
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
DE10131249A1 (en) * 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Production of a film or a layer of semiconductor material comprises producing structures of repeating recesses on the surface of a semiconductor material
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826787A (en) * 1986-03-18 1989-05-02 Fujitsu Limited Method for adhesion of silicon or silicon dioxide plate
US5223081A (en) * 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013058222A1 (en) * 2011-10-18 2015-04-02 富士電機株式会社 Method for peeling support substrate of solid-phase bonded wafer and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TW582099B (en) 2004-04-01
US7045441B2 (en) 2006-05-16
TW200418151A (en) 2004-09-16
US20040180518A1 (en) 2004-09-16

Similar Documents

Publication Publication Date Title
US20040178173A1 (en) Method for laminating a material layer onto a transparent substrate
US8830665B2 (en) Attachment features for housings
TW200300610A (en) Vehicle, display device and manufacturing method for a semiconductor device
JPH1111066A (en) Ic carrier with plate-like frame and its manufacture
EP2088622A2 (en) Method for forming an electronic device on a flexible metallic substrate and resultant device
KR940019183A (en) Transparent panel heater, manufacturing method and transparent conductive laminate
JP2006051923A (en) Window material for vehicle
JPH08132258A (en) Laser marking method
JPH0222540B2 (en)
JP2009025602A (en) Pressure-sensitive adhesive double coated tape for liquid crystal cell adhesion, backlight unit, liquid crystal display device and method for manufacturing liquid crystal display device
JP4347218B2 (en) Electronic module with visible elements on the surface and method for manufacturing such a module
JP2005502763A5 (en)
JP2006313827A (en) Method of manufacturing thin film device and electronic apparatus
JP2004532515A5 (en)
JP2005303158A (en) Device forming method
JP2004252297A (en) Manufacturing method of tft liquid crystal display panel
JP2003321258A (en) Laminated glass equipped with heater and manufacturing process therefor
JP2003022032A (en) Method for manufacturing functional element substrate and method for manufacturing functional panel
JP2006310398A (en) Method of manufacturing thin-film element, and electronic apparatus
JP4056296B2 (en) Damping member, manufacturing method thereof, and suspension device provided with damping member
JP2000003944A (en) Manufacture of flexible board
JP2009238994A (en) Method of manufacturing electronic component
JP3651859B2 (en) Return postcard
JP2004336698A (en) Paste circuit, paste circuit sheet and manufacturing method of paste circuit sheet
US20240092065A1 (en) Seals for Optical Components

Legal Events

Date Code Title Description
AS Assignment

Owner name: INDUSTRIAL TECHOLOGY RESEARCH INSTITUTE, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHANG, CHICH SHANG;LEE, CHI-SHEN;HUANG, SHUN-FA;AND OTHERS;REEL/FRAME:014177/0881;SIGNING DATES FROM 20030507 TO 20030514

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION