US20020113245A1 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
US20020113245A1
US20020113245A1 US09/784,103 US78410301A US2002113245A1 US 20020113245 A1 US20020113245 A1 US 20020113245A1 US 78410301 A US78410301 A US 78410301A US 2002113245 A1 US2002113245 A1 US 2002113245A1
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United States
Prior art keywords
frame
emitting diode
light emitting
radiation
increased
Prior art date
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Granted
Application number
US09/784,103
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US6429464B1 (en
Inventor
Ming-Te Lin
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Para Light Electronics Co Ltd
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Para Light Electronics Co Ltd
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Publication date
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Priority to US09/784,103 priority Critical patent/US6429464B1/en
Assigned to PARA LIGHT ELECTRONICS CO., LTD. reassignment PARA LIGHT ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIN, MING-TE
Application granted granted Critical
Publication of US6429464B1 publication Critical patent/US6429464B1/en
Publication of US20020113245A1 publication Critical patent/US20020113245A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting diode, and more particularly to a light emitting diode having enhanced radiation effect and light-emitting efficiency.
  • a conventional vertical-type light emitting diode as shown in FIG. 1, includes a frame A 2 on which a bowl portion is formed for receiving a chip A 1 therein.
  • the frame A 2 has two extended leads, at lower ends of which the frame A 2 is soldered onto a printed circuit board A 4 at soldering points A 3 .
  • This type of conventional light emitting diode has relatively deep bowl portion that facilitates to enhanced light-emitting efficiency. However, it uses only one of the two leads to radiate heat and therefore has inferior radiation efficiency. It is theoretically known that the radiation effect is in proportion to the light-emitting efficiency. The poorer the radiation effect is, the poorer the light-emitting efficiency is.
  • the vertical-type light emitting diode shown in FIG. 1 has poor radiation effect and therefore needs improvement.
  • FIG. 2 illustrates another conventional light emitting diode that includes a frame B 2 for holding a chip B 1 thereon.
  • the frame B 2 has increased width and leads having increased diameter, compared with the frame A 2 shown in FIG. 1.
  • the leads are also soldered onto a printed circuit board B 4 at soldering points B 3 .
  • the width-increased frame B 2 enables a reduced overall height of the light emitting diode, and both the two leads are used to radiate heat to provide an enhanced radiating capacity.
  • the frame B 2 is thin in its thickness and the bowl portion on the frame B 2 has a relatively small depth of about 0.
  • a primary object of the present invention is to provide a light emitting diode that has relatively deep bowl portion and increased radiation and light-emitting efficiency.
  • the light emitting diode of the present invention includes a frame having an increased thickness to enable the bowl portion formed thereon to have a depth more than 0.6 mm to provide enhanced light-emitting efficiency.
  • the frame also includes leads downward extended from the frame and radiating blocks provided at or close to a bottom of the frame to increase the radiation efficiency.
  • the light emitting diode of the present invention further includes a layer of radiation-enhancing material over bottoms of the frame and the radiating blocks to enhance the radiating capacity of the light emitting diode.
  • the frame and the radiating blocks or the layer of radiation-enhancing material is connected to and in direct contact with the printed circuit board to further increase the radiating area of the light emitting diode.
  • FIG. 1 is a sectional view of a conventional vertical-type light emitting diode
  • FIG. 2 is a sectional view of another conventional light emitting diode
  • FIG. 3 is a perspective view of a light emitting diode according to a first embodiment of the present invention.
  • FIG. 4 is a sectional view of the light emitting diode of FIG. 3 being mounted on a printed circuit board;
  • FIG. 5 is a perspective view of a light emitting diode according to a second embodiment of the present invention.
  • FIG. 6 is a perspective view of a light emitting diode according to a third embodiment of the present invention.
  • FIGS. 3 and 4 are perspective and sectional views, respectively, of a light emitting diode according to a first embodiment of the present invention.
  • the light emitting diode includes a chip C 1 received in a bowl portion of a frame C 2 .
  • the frame C 2 has a thickness relatively larger than that of the frame B 2 of the conventional light emitting diode shown in FIG. 2. Accordingly, it is possible for the bowl portion of the frame C 2 to have a depth more than 0.6 mm that will largely upgrade a light-emitting efficiency of the light emitting diode.
  • the frame C 2 also has an increased width and leads downward extended from two outer sides of the frame C 2 .
  • the increased thickness and width of the frame C 2 enables the same to have increased radiating volume and enhanced radiation effect. Moreover, there are radiating blocks C 5 and a layer of radiation-enhancing material C 6 provided at a bottom of the frame C 2 .
  • the frame C 2 is soldered onto a printed circuit board C 4 at soldering points C 3 , such that a large contact area exists between the frame C 2 and the printed circuit board C 4 .
  • the frame C 2 may be connected to the printed circuit board C 4 by means of screws instead of being soldered onto the printed circuit board C 4 at soldering points C 3 .
  • the light emitting diode of the present invention may have relatively increased radiation efficiency and light-emitting efficiency in both theoretical basis and practical experimental basis. The light emitting diode of the present invention therefore has largely improved performance.
  • FIG. 5 shows a perspective view of another light emitting diode according to a second embodiment of the present invention.
  • the light emitting diode of this second embodiment there are two bowl portions provided on the frame C 2 for respectively receiving a chip C 1 therein, so that the light emitting diode is able to emit two different color lights.
  • the light emitting diode is able to emit multiple different color lights.
  • the light emitting diode of the present invention has bowl portion or portions having an increased depth more than 0.6 mm, increased radiating volume, and increased contact area between the frame and the printed circuit board, and therefore has improved radiation efficiency and enhanced light-emitting efficiency.

Abstract

A light emitting diode includes a frame having increased thickness to enable a bowl portion thereof to have an increased depth more than 0.6 mm. Radiating blocks are provided below the frame and a layer of radiation-enhancing material is applied over bottoms of the frame and the radiating blocks to increase a radiating area of the light emitting diode. And, leads are downward extended from two outer sides of the frame. The light emitting diode therefore has increased radiation efficiency and light-emitting efficiency.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a light emitting diode, and more particularly to a light emitting diode having enhanced radiation effect and light-emitting efficiency. [0002]
  • 2. Description of Related Prior Art [0003]
  • A conventional vertical-type light emitting diode, as shown in FIG. 1, includes a frame A[0004] 2 on which a bowl portion is formed for receiving a chip A1 therein. The frame A2 has two extended leads, at lower ends of which the frame A2 is soldered onto a printed circuit board A4 at soldering points A3. This type of conventional light emitting diode has relatively deep bowl portion that facilitates to enhanced light-emitting efficiency. However, it uses only one of the two leads to radiate heat and therefore has inferior radiation efficiency. It is theoretically known that the radiation effect is in proportion to the light-emitting efficiency. The poorer the radiation effect is, the poorer the light-emitting efficiency is. The vertical-type light emitting diode shown in FIG. 1 has poor radiation effect and therefore needs improvement.
  • FIG. 2 illustrates another conventional light emitting diode that includes a frame B[0005] 2 for holding a chip B1 thereon. The frame B2 has increased width and leads having increased diameter, compared with the frame A2 shown in FIG. 1. The leads are also soldered onto a printed circuit board B4 at soldering points B3. In this type of conventional light emitting diode, the width-increased frame B2 enables a reduced overall height of the light emitting diode, and both the two leads are used to radiate heat to provide an enhanced radiating capacity. However, the frame B2 is thin in its thickness and the bowl portion on the frame B2 has a relatively small depth of about 0. 4 mm that is smaller than the bowl portion on the frame A2 for the vertical-type light emitting diode of FIG. 1. Since the depth of the bowl portion also has connection with the light-emitting efficiency, there is limitation in the light-emitting efficiency of the light emitting diode of FIG. 2 and an improvement on it is desired.
  • It is therefore tried by the inventor to develop a light emitting diode that has relatively deep bowl portion and increased radiation and light-emitting efficiency. [0006]
    • SUMMARY OF THE INVENTION
  • A primary object of the present invention is to provide a light emitting diode that has relatively deep bowl portion and increased radiation and light-emitting efficiency. To achieve the above and other objects, the light emitting diode of the present invention includes a frame having an increased thickness to enable the bowl portion formed thereon to have a depth more than 0.6 mm to provide enhanced light-emitting efficiency. The frame also includes leads downward extended from the frame and radiating blocks provided at or close to a bottom of the frame to increase the radiation efficiency. The light emitting diode of the present invention further includes a layer of radiation-enhancing material over bottoms of the frame and the radiating blocks to enhance the radiating capacity of the light emitting diode. In the present invention, the frame and the radiating blocks or the layer of radiation-enhancing material is connected to and in direct contact with the printed circuit board to further increase the radiating area of the light emitting diode.[0007]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings, wherein [0008]
  • FIG. 1 is a sectional view of a conventional vertical-type light emitting diode; [0009]
  • FIG. 2 is a sectional view of another conventional light emitting diode; [0010]
  • FIG. 3 is a perspective view of a light emitting diode according to a first embodiment of the present invention; [0011]
  • FIG. 4 is a sectional view of the light emitting diode of FIG. 3 being mounted on a printed circuit board; [0012]
  • FIG. 5 is a perspective view of a light emitting diode according to a second embodiment of the present invention; and [0013]
  • FIG. 6 is a perspective view of a light emitting diode according to a third embodiment of the present invention.[0014]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Please refer to FIGS. 3 and 4 that are perspective and sectional views, respectively, of a light emitting diode according to a first embodiment of the present invention. As shown, the light emitting diode includes a chip C[0015] 1 received in a bowl portion of a frame C2. The frame C2 has a thickness relatively larger than that of the frame B2 of the conventional light emitting diode shown in FIG. 2. Accordingly, it is possible for the bowl portion of the frame C2 to have a depth more than 0.6 mm that will largely upgrade a light-emitting efficiency of the light emitting diode. The frame C2 also has an increased width and leads downward extended from two outer sides of the frame C2. The increased thickness and width of the frame C2 enables the same to have increased radiating volume and enhanced radiation effect. Moreover, there are radiating blocks C5 and a layer of radiation-enhancing material C6 provided at a bottom of the frame C2. The frame C2 is soldered onto a printed circuit board C4 at soldering points C3, such that a large contact area exists between the frame C2 and the printed circuit board C4. A1ternatively, the frame C2 may be connected to the printed circuit board C4 by means of screws instead of being soldered onto the printed circuit board C4 at soldering points C3. In this manner, the light emitting diode of the present invention may have relatively increased radiation efficiency and light-emitting efficiency in both theoretical basis and practical experimental basis. The light emitting diode of the present invention therefore has largely improved performance.
  • FIG. 5 shows a perspective view of another light emitting diode according to a second embodiment of the present invention. In the light emitting diode of this second embodiment, there are two bowl portions provided on the frame C[0016] 2 for respectively receiving a chip C1 therein, so that the light emitting diode is able to emit two different color lights. When there are more than two bowl portions formed on the frame C2 for each receiving a chip C1, the light emitting diode is able to emit multiple different color lights.
  • In conclusion, the light emitting diode of the present invention has bowl portion or portions having an increased depth more than 0.6 mm, increased radiating volume, and increased contact area between the frame and the printed circuit board, and therefore has improved radiation efficiency and enhanced light-emitting efficiency. [0017]
  • The present invention has been described with a preferred embodiment thereof and it is understood that many changes and modifications in the described embodiment can be carried out without departing from the scope and the spirit of the invention that is intended to be limited only by the appended claims. [0018]

Claims (4)

What is claimed is:
1. A light emitting diode comprising at least one chip, a frame formed with at least one bowl portion for receiving said at least one chip therein, leads extended from said frame, and radiating blocks provided at or close to a bottom of said frame; said light emitting diode being characterized in that said frame has an increased thickness to enable said at least one bowl portion formed thereon to have a depth more than 0.6 mm.
2. A light emitting diode as claimed in claim 1, further comprises a layer of radiation-enhancing material provided at bottoms of said frame and said radiating blocks.
3. A light emitting diode as claimed in claim 1, wherein said frame and said radiating blocks are directly connected at their bottoms to a printed circuit board.
4. A light emitting diode as claimed in claim 2, wherein said frame and said radiating blocks are connected to a printed circuit board with said layer of radiation-enhancing material in direct contact with said printed circuit board.
US09/784,103 2001-02-16 2001-02-16 Light emitting diode Expired - Fee Related US6429464B1 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050017259A1 (en) * 2003-07-25 2005-01-27 Han Kwan-Young Chip light emitting diode and fabrication method thereof
EP1848042A1 (en) * 2006-04-21 2007-10-24 LEXEDIS Lighting GmbH LED package with submount
US20070252167A1 (en) * 2006-04-26 2007-11-01 Everlight Electronics Co., Ltd. Surface mounting optoelectronic device
US20080230797A1 (en) * 2007-03-21 2008-09-25 Hui-Hung Chang LED module and manufacturing method thereof
US20090101897A1 (en) * 2006-01-20 2009-04-23 Hymite A/S Package for a light emitting element
US20090268084A1 (en) * 2003-08-04 2009-10-29 Eiji Kametani Image capturing device having pulsed led flash
EP2452547B1 (en) * 2009-07-08 2018-10-31 OSRAM Opto Semiconductors GmbH Electronic component

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833566B2 (en) * 2001-03-28 2004-12-21 Toyoda Gosei Co., Ltd. Light emitting diode with heat sink
KR100439402B1 (en) * 2001-12-24 2004-07-09 삼성전기주식회사 Light emission diode package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
JP2006093672A (en) * 2004-08-26 2006-04-06 Toshiba Corp Semiconductor light emitting device
US8497560B2 (en) * 2006-10-06 2013-07-30 Industrial Technology Research Institute LED package and method of assembling the same
KR101104034B1 (en) * 2007-12-06 2012-01-09 엘지이노텍 주식회사 Lighting emitting diode, Lighting Emitting Apparatus and fabrication method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222578A (en) * 1982-06-18 1983-12-24 Toshiba Corp Lighting device
US5001609A (en) * 1988-10-05 1991-03-19 Hewlett-Packard Company Nonimaging light source
US6121637A (en) * 1997-10-03 2000-09-19 Rohm Co., Ltd. Semiconductor light emitting device with increased luminous power

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7042022B2 (en) * 2003-07-25 2006-05-09 Seoul Semiconductor Co., Ltd. Chip light emitting diode and fabrication method thereof
US20050017259A1 (en) * 2003-07-25 2005-01-27 Han Kwan-Young Chip light emitting diode and fabrication method thereof
USRE42112E1 (en) 2003-07-25 2011-02-08 Seoul Semiconductor Co., Ltd. Chip light emitting diode and fabrication method thereof
US20090268084A1 (en) * 2003-08-04 2009-10-29 Eiji Kametani Image capturing device having pulsed led flash
US8687109B2 (en) * 2003-08-04 2014-04-01 Sharp Kabushiki Kaisha Image capturing device having pulsed LED flash
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US20090101897A1 (en) * 2006-01-20 2009-04-23 Hymite A/S Package for a light emitting element
US8552460B2 (en) 2006-01-20 2013-10-08 Tsmc Solid State Lighting Ltd. Package for a light emitting element
WO2007121973A1 (en) * 2006-04-21 2007-11-01 Lexedis Lighting Gmbh Led platform having a led chip on a membrane
US20120187432A1 (en) * 2006-04-21 2012-07-26 Lexedis Lighting Gmbh LED Platform with Membrane
EP1848042A1 (en) * 2006-04-21 2007-10-24 LEXEDIS Lighting GmbH LED package with submount
US8946740B2 (en) * 2006-04-21 2015-02-03 Lexedis Lighting Gmbh LED platform with membrane
US20070252167A1 (en) * 2006-04-26 2007-11-01 Everlight Electronics Co., Ltd. Surface mounting optoelectronic device
US20080230797A1 (en) * 2007-03-21 2008-09-25 Hui-Hung Chang LED module and manufacturing method thereof
EP2452547B1 (en) * 2009-07-08 2018-10-31 OSRAM Opto Semiconductors GmbH Electronic component

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Effective date: 20060806