EP2120271A1 - Led device and illuminating apparatus - Google Patents
Led device and illuminating apparatus Download PDFInfo
- Publication number
- EP2120271A1 EP2120271A1 EP08712133A EP08712133A EP2120271A1 EP 2120271 A1 EP2120271 A1 EP 2120271A1 EP 08712133 A EP08712133 A EP 08712133A EP 08712133 A EP08712133 A EP 08712133A EP 2120271 A1 EP2120271 A1 EP 2120271A1
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- European Patent Office
- Prior art keywords
- glass member
- led
- led chip
- led device
- sealing resin
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
Definitions
- the present invention relates to a light emitting diode (LED)-equipped LED device and an illuminating apparatus.
- LED light emitting diode
- a multi-color mixed type LED illuminating device As an LED illuminating device that illuminates a display device performing color display using RGB color filters in relation to the present invention, a multi-color mixed type LED illuminating device is in use.
- the multi-color mixed type LED illuminating device illuminates white light by simultaneously making three RGB color LEDs emit light and performs color display with the white light and the color filters of the display device.
- the multi-color mixed type LED illuminating device has a problem in that each LED of the RGB colors emits light, a large number of LEDs are required to obtain the white light, thereby increasing the cost.
- a phosphor color mixed type LED illuminating device is disclose in Japanese Patent Publication No. 2998696 and Japanese Laid Open Publication No. JP11-87784 .
- phosphor is mixedly included in a resin that seals an LED chip.
- the LED illuminating device having the phosphor contained in the resin has the following problems.
- an object of the present invention is to provide an LED device and an illuminating apparatus capable of preventing a diminution in luminous efficiency and obtaining a predetermined light emission color.
- an LED device including: an LED chip mounted on a substrate made of metal; a sealing resin that seals the LED chip; and a glass member formed on the sealing resin or encapsulated at a position within the sealing resin where light, which is emitted from the LED chip and which is outputted to the exterior of the device body, passes through, wherein the glass member contains phosphor and a thermal conductivity of the sealing resin is lower than that of the glass member.
- the LED device according to the present invention as described above contains the phosphor in the glass member, degradation of the phosphor due to moisture absorption or oxidation can be prevented.
- the glass member is disposed with the sealing resin having thermal resistance, degradation of the phosphor can be lessened, and accordingly, diminution in the luminous efficiency can be prevented.
- heat generated by the LED chip is released from the metal substrate, a change in the light emission wavelength of the phosphor can be prevented, and thus, a predetermined light emission color can be obtained.
- the light emission wavelength of the LED chip of the LED device may range from 250 nm to 500 nm.
- the glass member of the LED device may have a sectional shape according to light distribution characteristics of the LED chip. In this case, a uniform light emission color may be obtained.
- the glass member of the LED device may have a plurality of glass layers, and each glass layer may contain at least one color of phosphor. If a plurality of colors of phosphor are in use, phosphor of light may be separately contained in each of the plurality of glass layers to prevent an occurrence of phosphor distribution deficiency or bias.
- the glass member of the LED device may be sandwiched by protection members. With such a configuration, the glass member can be prevented from being damaged by an external force or by a stress due to the difference between the coefficient of thermal expansion of the glass member and that of the sealing resin.
- the protection members may be made of a material harder than the glass member, or may be made of a material softer than the glass member.
- the sealing resin of the LED may contain a diffuser, and in this case, the diffuser may cause light distribution of the LED chip to become uniform.
- the LED chip and the substrate of the LED device may be bonded by soldering or bonded by an adhesive material with a thermal conductivity higher than that of soldering.
- heat generated from the LED chip can be easily thermally conducted to the substrate, improving the heat release characteristics, which results in preventing a change in the light emission wavelength of phosphor to thus obtain a predetermined light emission color.
- the substrate of the LED device may include a connector for an electrical connection with the exterior.
- the LED chip is a power LED and has a high heat capacity, which, thus, can be firmly mounted through soldering, the LED chip can be easily mounted on a different electronic devices and the like.
- feeding power to the LED chip can be made through a lead frame.
- the illuminating apparatus includes the LED device according to the embodiments of the present invention.
- the phosphor is contained in the glass member, degradation of the phosphor due to moisture absorption or oxidation can be prevented.
- heat generated from the LED chip is released from the metal substrate and the glass member is disposed by the medium of the heat-resistant sealing resin having thermal resistance, degradation of the phosphor due to heat can thus be prevented.
- a diminution in the luminous efficiency of the LED device can be prevented and a predetermined light emission color can be obtained.
- FIG. 1 is a side-sectional view of a white LED device 20 according to a first exemplary embodiment of the invention
- the white LED device 20 excites phosphor with a gallium nitride (GaN)-based LED (i.e., blue or near-ultraviolet LED) having a light emission wavelength ranging from 250 nm to 500 nm to mix green, red or yellow light emission with blue color to produce white color.
- GaN gallium nitride
- the white LED device 20 includes an LED chip 13 mounted by the medium of a sub-mount 5 on a metal substrate 1. LED chip 13 is sealed with sealing resin 11. Glass member 12 containing phosphor 22 is disposed on sealing resin 11. The white LED device 20 will now be described in detail.
- An insulating layer 2 is stacked on metal substrate 1, and wiring layer 3 is stacked on insulating layer 2.
- Metal substrate 1 is made of metal having high thermal conductivity such as copper (Cu) or aluminum (Al), and an Ni layer and an Au layer are stacked on a mounting surface of sub-mount 5.
- Insulating layer 2 is made of an insulation resin such as glass epoxy.
- Wiring layer 3 is made of copper (Cu), and an Ni layer and an Au layer are stacked on an exposed surface of wiring layer 3.
- Insulation-resist layer 4 made of an epoxy resin is stacked on insulating layer 2.
- Connector 7 that allows an electrical connection to the exterior is provided on insulation-resist layer 4.
- a window unit 21 is formed at insulating layer 2 and wiring layer 3.
- LED chip 13 mounted on sub-mount 5 is disposed within window unit 21.
- LED chip 13 and sub-mount 5 are bonded by hard solder 9.
- Metal substrate 1 and sub-mount 5 are bonded by soft solder 6 having a lower melting point than that of hard solder 9.
- hard solder 9 is made of AuSn
- the soft solder is made of SnAgCu
- sub-mount 5 is made of AIN.
- LED chip 13 has an InGaN-based light emission layer on the Al 2 O 3 or SiC substrate.
- LED chip 13 is formed as a blue or near-ultraviolet chip with a light emission wavelength ranging from 250 nm to 500 nm.
- a rear surface of LED chip 13 is coated by Au.
- LED chip 13 is electrically connected with wiring layer 3 formed on insulating layer 2 by electrical connection wiring 10 made of Au.
- Wiring layer 8 is formed on sub-mount 5 and is electrically connected with wiring layer 3 by electrical connection wiring 10.
- LED chip 13, sub-mount 5, and the respective electrical connection wirings 10 are disposed within reflector 14 made of an Al-based metal.
- Glass member 12 containing phosphor 22, the feature of the present invention, is disposed on the surface of sealing resin 11. Light from LED chip 13 and light reflected from reflector 14 pass through glass member 12 so as to be outputted to the exterior.
- Glass member 12 contains the following type of phosphor 22 within glass.
- the refraction index of sealing resin 11 is smaller than that of glass member 12, light outputted from LED chip 13 can be effectively used as excitation light, without being reflected from glass member 12.
- the reflection index of glass member 12 is 1.5, that of sealing resin 11 may be about 1.4.
- phosphor 22 is encapsulated within glass member 12, it can be prevented from absorbing moisture or being oxidized that will result in degradation.
- sealing resin 11 serving as heat resistance exists between LED chip 13, a heating member, and phosphor 22.
- heat generated from LED chip 13 is largely conducted sequentially to hard solder 9, sub-mount 5, soft solder 6, and metal substrate 1 via the Au film formed on the rear surface of LED chip 13, and is finally released from the rear surface of metal substrate 1. Accordingly, degradation of phosphor 22 caused by the heat from LED chip 13 can be lessened and a change in the light emission wavelength of phosphor 22 can be prevented, resulting in obtaining a predetermined light emission color by the white LED device 20.
- the white LED device according to the present exemplary embodiment 20 has connector 7 for an external connection.
- a high power LED because it has a high thermal capacity, its mounting through soldering is difficult.
- the white LED 20 has connector 7, the white LED device 20 can be easily mounted on a different electronic device, without the necessity of being mounted through soldering.
- the white LED device 20 in the present exemplary embodiment, the case where only one LED chip 13 is mounted is illustrated, but the present invention is not meant to be limited thereto and two or more LED chips 13 may be mounted.
- phosphor 22 is encapsulated in glass member 12 and heat is satisfactorily released from metal substrate 1.
- the white LED device 20 whose luminous efficiency is prevented from degradation can be advantageously used and a predetermined light emission color can be obtained by the white LED device 20.
- LED chip 33 of white LED device 40 uses a configuration in which a P pole and an N pole are provided on its upper surface, and is mounted on metal substrate 1 without using a sub-mount therebetween.
- Other basic configuration is the same as that of the first embodiment, so its detailed description will be omitted.
- a plated layer (e.g., a gold-plated layer) is formed on a lower surface of LED chip 33 where the P pole and the N pole are not formed, so as to be adapted to soldering.
- the lower surface of LED chip 33 faces to be bonded with metal substrate 1 by soft solder 6.
- the P pole and the N pole are electrically connected to the wiring layers 3 by the electrical connection wirings 10. Namely, in the present exemplary embodiment, as described above, the P pole and the N pole are formed on the upper surface of LED chip 33 and are not formed on the lower surface of LED chip 33, so insulation by a sub-mount is not necessary. Also, a hard solder for bonding the sub-mount is not required.
- heat resistance from LED chip 33 to metal substrate 1 is diminished, heat releasing is accelerated to effectively reduce degradation by heat generated from phosphor 22.
- a change in the light emission wavelength of phosphor 22 is prevented, a predetermined light emission color can be obtained by the white LED 40.
- LED chip 33 does not require a sub-mount or a hard solder, the fabrication process can be simplified and the number of components of the device can be reduced.
- the mounting area may be equal to the area corresponding to the LED chip, and accordingly, the device can be reduced in size.
- Glass member 12 may have a shape based on light distribution characteristics of the LED chip as shown in FIGs. 3 and 4 .
- glass member 12 when the light distribution characteristics of LED chip 13 is concentrated to a front side, glass member 12 may have a lens shape with its central portion convex as shown in FIGs. 3(a) and 3(b) . Meanwhile, FIG. 3(a) illustrates glass member 12 in the shape of a solid-core hemisphere, and FIG. 3(b) illustrates glass member 12 in the shape of a hallow hemisphere.
- glass member 12 may have the shape of a flat lens as shown in FIGs. 4(a) and 4(b) . Meanwhile, FIG. 4(a) illustrates glass member 12 in the shape of a solid-core hemisphere, and FIG. 4(b) illustrates glass member 12 in the shape of a hallow hemisphere.
- glass member 12 may have a laminated structure including a first glass layer 12a, second glass layer 12b, and third glass layer 12c.
- each of glass layers 12a to 12c may contain a unicolor phosphor 22.
- the number of laminated layers is not limited to the three layers. That is, glass member 12 may have a two-layer structure or may have a four or more-layer structure.
- the phosphor contained in each glass layer is not limited to a single color. For example, if the glass layer has a two-layer structure, one of the layers may be unicolor while the other may have two or more colors. If a four-color phosphor is in use, each layer may contain a two-color phosphor.
- the laminated structure of the glass member is not limited to the laminating of the glass layers in the planar shape as shown in FIG. 5 but the curved glass members as shown in FIGs. 3(b) or 4(b) may be laminated.
- sealing resin 11 may contain diffuser 23 made of powder type silica or the like. With diffuser 23 contained in sealing resin 11, the light distribution of LED chip 13 may become uniform.
- FIG. 7 is a side-sectional view showing the configuration of a white LED including protection members for protecting the glass member.
- Glass member 12 contains phosphor 22 therein, so its degree of strength is degraded compared with a glass member that does not contain phosphor 22.
- the white LED device may be configured to have protection members 24 formed on both sides of glass member 12 as shown in FIG. 7 .
- Protection members 24 prevent an external force from being directly applied to glass member 12 to thus protect glass member 12 against damage. Protection members 24 may be any member so long as it does not hinder light from being outputted from LED chip 13 as much as possible. For example, as protection members 24, a member such as a metal latticed guide or transparent hard glass having a higher degree of strength than that of glass member 12 may be employed. Because glass member 12 is reinforced by the hard members, it cannot be deformed or damaged.
- a member such as transparent gel type silicon or the like, having a higher flexibility than that of glass member 12 may be used as protection members 24.
- a member such as transparent gel type silicon or the like, having a higher flexibility than that of glass member 12 may be used as protection members 24.
- glass member 12 is disposed on sealing resin 11, but in an exemplary embodiment of the present invention, glass member 12 may be encapsulated within sealing resin 11. With this configuration, an air layer may not be interposed between sealing resin 11 and glass member 12. With the presence of an air layer, light, which has been outputted from LED chip 13 and then passed through sealing resin 11, may be totally reflected before it enters the air layer and finally weaken and dies out within sealing resin 11. Thus, glass member 12 is encapsulated within sealing resin 11 to omit an air layer, and accordingly, light can be inputted to glass member 12 without being attenuated or dying out.
- FIG. 8 is a side-sectional view of a white LED device including a glass member having the protection members and encapsulated within the sealing resin.
- Glass member 12 sandwiched by protection members 24 is encapsulated at a position where light outputted from LED chip 13 and light reflected from reflector 14 pass through glass member 12. Namely, light from LED chip 13 and light reflected from reflector 14 pass through glass member 12 and are outputted to the exterior of the main body of white LED device 20.
- FIGs. 7 and 8 illustrate protection members 24 provided on both principal surfaces of glass member 12, but the present invention is not meant to be limited thereto.
- protection members 24 may be coated on every surface of glass member 12 including the sides as well as both principal surfaces.
- feeding power to LED chip 13 is made via wiring layer 3 formed on insulating layer 2.
- the present invention is not limited thereto.
- feeding power may be made via resin-molded lead frame 25.
- a connector or the like is not illustrated.
- Lead frame 25 penetrates reflector 14, of which one end is electrically connected to an external power source (not shown) and the other end is electrically connected to electrical connection wiring 10.
- sub-mount 5 with LED chip 13 mounted thereon and metal substrate 1 are bonded by soft solder 6.
- LED chip 33 and metal substrate 1 are bonded by soft solder 6.
- the bonding of LED chip-mounted sub-mount 5 or LED chip 33 with metal substrate 1 is not limited to the soldering.
- they may be bonded by using an adhesive material with a higher thermal conductivity than that of the soldering.
- the adhesive material a material that contains more than 90% Ag may be used.
- FIGs. 10A and 10B illustrate exterior perspective views of LED illuminating apparatus according to an exemplary embodiment of the present invention.
- FIG. 10A is a side-sectional view of the LED illuminating apparatus
- FIG. 10B is a plan view of the LED illuminating apparatus.
- an accommodating container is omitted.
- the LED illuminating apparatus 26 includes a plurality of white LED devices 20 arranged in a matrix form on support substrate 27 and accommodating container 28 that accommodates white LED devices 20.
- FIGs. 10A and 10B illustrate the illuminating apparatus having the plurality of white LED devices 20, but the present invention is not limited thereto and the illuminating apparatus may be configured only with a single white LED device 20.
Abstract
Description
- The present invention relates to a light emitting diode (LED)-equipped LED device and an illuminating apparatus.
- As an LED illuminating device that illuminates a display device performing color display using RGB color filters in relation to the present invention, a multi-color mixed type LED illuminating device is in use. The multi-color mixed type LED illuminating device illuminates white light by simultaneously making three RGB color LEDs emit light and performs color display with the white light and the color filters of the display device. However, the multi-color mixed type LED illuminating device has a problem in that each LED of the RGB colors emits light, a large number of LEDs are required to obtain the white light, thereby increasing the cost.
- As a solution to the problem of the multi-color mixed type LED illuminating device, for example, a phosphor color mixed type LED illuminating device is disclose in Japanese Patent Publication No.
2998696 JP11-87784 - However, the LED illuminating device having the phosphor contained in the resin has the following problems.
- 1. Because the resin absorbs moisture, the phosphor absorbs moisture or is oxidized and thereby degraded. Thus, since the phosphor is degraded for a long time, the luminous efficiency of the device deteriorates.
- 2. Because a light emission wavelength of the phosphor is altered due to heat generated from the LED chip, the required light emission color is changed.
- Thus, an object of the present invention is to provide an LED device and an illuminating apparatus capable of preventing a diminution in luminous efficiency and obtaining a predetermined light emission color.
- In order to solve the above problems, there is provided an LED device including: an LED chip mounted on a substrate made of metal; a sealing resin that seals the LED chip; and a glass member formed on the sealing resin or encapsulated at a position within the sealing resin where light, which is emitted from the LED chip and which is outputted to the exterior of the device body, passes through, wherein the glass member contains phosphor and a thermal conductivity of the sealing resin is lower than that of the glass member.
- Because the LED device according to the present invention as described above contains the phosphor in the glass member, degradation of the phosphor due to moisture absorption or oxidation can be prevented. In addition, because the glass member is disposed with the sealing resin having thermal resistance, degradation of the phosphor can be lessened, and accordingly, diminution in the luminous efficiency can be prevented. Also, because heat generated by the LED chip is released from the metal substrate, a change in the light emission wavelength of the phosphor can be prevented, and thus, a predetermined light emission color can be obtained.
- In particular, in the case of the configuration in which the glass member is encapsulated in the sealing resin, there is no air layer formed between the glass member and the sealing resin. Thus, light which has passed through the sealing resin after being outputted from the LED chip can be prevented from being totally reflected to be attenuated and die out in the sealing resin before it enters the air layer.
- The light emission wavelength of the LED chip of the LED device may range from 250 nm to 500 nm.
- The glass member of the LED device may have a sectional shape according to light distribution characteristics of the LED chip. In this case, a uniform light emission color may be obtained.
- The glass member of the LED device may have a plurality of glass layers, and each glass layer may contain at least one color of phosphor. If a plurality of colors of phosphor are in use, phosphor of light may be separately contained in each of the plurality of glass layers to prevent an occurrence of phosphor distribution deficiency or bias.
- The glass member of the LED device may be sandwiched by protection members. With such a configuration, the glass member can be prevented from being damaged by an external force or by a stress due to the difference between the coefficient of thermal expansion of the glass member and that of the sealing resin.
- The protection members may be made of a material harder than the glass member, or may be made of a material softer than the glass member.
- The sealing resin of the LED may contain a diffuser, and in this case, the diffuser may cause light distribution of the LED chip to become uniform.
- The LED chip and the substrate of the LED device may be bonded by soldering or bonded by an adhesive material with a thermal conductivity higher than that of soldering. In this case, heat generated from the LED chip can be easily thermally conducted to the substrate, improving the heat release characteristics, which results in preventing a change in the light emission wavelength of phosphor to thus obtain a predetermined light emission color.
- The substrate of the LED device may include a connector for an electrical connection with the exterior. In this case, if the LED chip is a power LED and has a high heat capacity, which, thus, can be firmly mounted through soldering, the LED chip can be easily mounted on a different electronic devices and the like.
- In the LED device, feeding power to the LED chip can be made through a lead frame.
- The illuminating apparatus includes the LED device according to the embodiments of the present invention.
- According to the present invention, because the phosphor is contained in the glass member, degradation of the phosphor due to moisture absorption or oxidation can be prevented. In addition, heat generated from the LED chip is released from the metal substrate and the glass member is disposed by the medium of the heat-resistant sealing resin having thermal resistance, degradation of the phosphor due to heat can thus be prevented. As a result, a diminution in the luminous efficiency of the LED device can be prevented and a predetermined light emission color can be obtained.
-
- [
FIG. 1 ] is a side-sectional view of a white LED device according to a first exemplary embodiment of the invention; - [
FiG. 2 ] is a side sectional view of a white LED device according to a second exemplary embodiment of the invention; - [
FIG. 3 ] is a schematic view showing an example of the shape of a glass member; - [
FIG. 4 ] is a schematic view showing another example of the shape of the glass member; - [
FIG. 5 ] is a side-sectional view showing the configuration of a white LED including a glass member of a laminated structure; - [
FIG. 6 ] is a side-sectional view of a white LED device having a configuration of a white LED including a sealing resin containing a diffuser; - [
FIG. 7 ] is a side-sectional view showing the configuration of a white LED including a glass member sandwiched by protection members; - [
FIG. 8 ] is a side-sectional view of a white LED device including a glass member sandwiched by the protection members and encapsulated within the sealing resin; - [
FIG. 9 ] is a side-sectional view of a white LED device having a power feed structure by a lead frame; - [
FIG. 10A ] is a side-sectional view of an illuminating apparatus according to an exemplary embodiment of the present invention; and - [
FIG. 10B ] is a plan view of the illuminating apparatus according to an exemplary embodiment of the present invention. -
FIG. 1 is a side-sectional view of awhite LED device 20 according to a first exemplary embodiment of the invention; - The
white LED device 20 according to the first embodiment of the present invention excites phosphor with a gallium nitride (GaN)-based LED (i.e., blue or near-ultraviolet LED) having a light emission wavelength ranging from 250 nm to 500 nm to mix green, red or yellow light emission with blue color to produce white color. - The
white LED device 20 includes anLED chip 13 mounted by the medium of asub-mount 5 on ametal substrate 1.LED chip 13 is sealed withsealing resin 11.Glass member 12 containingphosphor 22 is disposed on sealingresin 11. Thewhite LED device 20 will now be described in detail. - An insulating layer 2 is stacked on
metal substrate 1, andwiring layer 3 is stacked on insulating layer 2.Metal substrate 1 is made of metal having high thermal conductivity such as copper (Cu) or aluminum (Al), and an Ni layer and an Au layer are stacked on a mounting surface ofsub-mount 5. Insulating layer 2 is made of an insulation resin such as glass epoxy.Wiring layer 3 is made of copper (Cu), and an Ni layer and an Au layer are stacked on an exposed surface ofwiring layer 3. Insulation-resistlayer 4 made of an epoxy resin is stacked on insulating layer 2. Connector 7 that allows an electrical connection to the exterior is provided on insulation-resistlayer 4. - A
window unit 21 is formed at insulating layer 2 andwiring layer 3.LED chip 13 mounted onsub-mount 5 is disposed withinwindow unit 21.LED chip 13 andsub-mount 5 are bonded byhard solder 9.Metal substrate 1 andsub-mount 5 are bonded bysoft solder 6 having a lower melting point than that ofhard solder 9. For example,hard solder 9 is made of AuSn, the soft solder is made of SnAgCu, andsub-mount 5 is made of AIN.LED chip 13 has an InGaN-based light emission layer on the Al2O3 or SiC substrate.LED chip 13 is formed as a blue or near-ultraviolet chip with a light emission wavelength ranging from 250 nm to 500 nm. A rear surface ofLED chip 13 is coated by Au. -
LED chip 13 is electrically connected withwiring layer 3 formed on insulating layer 2 byelectrical connection wiring 10 made of Au.Wiring layer 8 is formed onsub-mount 5 and is electrically connected withwiring layer 3 byelectrical connection wiring 10. -
LED chip 13,sub-mount 5, and the respective electrical connection wirings 10 are disposed withinreflector 14 made of an Al-based metal. Sealingresin 11, a silicon-based transparent resin, is charged withinreflector 14 to resin-seal LED chip 13,sub-mount 5, and the respectiveelectrical connection wirings 10. As sealingresin 11, a resin with a thermal conductivity lower than that of the at leastglass member 12 is used. This is to allow sealingresin 11 to have a thermal resistance, making it difficult for heat generated fromLED chip 13 to be conducted toglass member 12. -
Glass member 12 containingphosphor 22, the feature of the present invention, is disposed on the surface of sealingresin 11. Light fromLED chip 13 and light reflected fromreflector 14 pass throughglass member 12 so as to be outputted to the exterior. -
Glass member 12 contains the following type ofphosphor 22 within glass. - 1. Eu-activated aluminum silicon nitride-based nitride phosphor (red) having Sc-based Ce-activated oxide phosphor (green)
- 2. Eu-activated oxide phosphor (green ∼ yellow) and Eu-activated aluminum silicon nitride-based nitride phosphor (red)
- 3. Eu-activated thiogallate-based sulfides phosphor (green - yellow) and Eu-activated alkali-based sulfides phosphor (orange - red)
- 4. Eu-activated silicate-based oxide phosphor (green ∼ yellow) and Eu-activated alkali-based sulfides phosphor (orange ∼ red)
- By using the fact that the refraction index of sealing
resin 11 is smaller than that ofglass member 12, light outputted fromLED chip 13 can be effectively used as excitation light, without being reflected fromglass member 12. For example, if the reflection index ofglass member 12 is 1.5, that of sealingresin 11 may be about 1.4. - In the present exemplary embodiment, because
phosphor 22 is encapsulated withinglass member 12, it can be prevented from absorbing moisture or being oxidized that will result in degradation. In addition, sealingresin 11 serving as heat resistance exists betweenLED chip 13, a heating member, andphosphor 22. Also, heat generated fromLED chip 13 is largely conducted sequentially tohard solder 9,sub-mount 5,soft solder 6, andmetal substrate 1 via the Au film formed on the rear surface ofLED chip 13, and is finally released from the rear surface ofmetal substrate 1. Accordingly, degradation ofphosphor 22 caused by the heat fromLED chip 13 can be lessened and a change in the light emission wavelength ofphosphor 22 can be prevented, resulting in obtaining a predetermined light emission color by thewhite LED device 20. - As described above, by encapsulating
phosphor 22 inglass member 12, degradation ofphosphor 22 that otherwise results from moisture absorption, oxidation, and heat can be prevented, and accordingly, a change in the light emission wavelength ofphosphor 22 can be prevented. - In addition, the white LED device according to the present
exemplary embodiment 20 has connector 7 for an external connection. In case of a high power LED, because it has a high thermal capacity, its mounting through soldering is difficult. However, because thewhite LED 20 has connector 7, thewhite LED device 20 can be easily mounted on a different electronic device, without the necessity of being mounted through soldering. - Also, in the present exemplary embodiment, the case where only one
LED chip 13 is mounted is illustrated, but the present invention is not meant to be limited thereto and two ormore LED chips 13 may be mounted. In thewhite LED device 20 according to the present exemplary embodiment,phosphor 22 is encapsulated inglass member 12 and heat is satisfactorily released frommetal substrate 1. Thus, even if two ormore LED chips 13 are mounted to increase the amount of light as a single device and thus the heating value is increased, thewhite LED device 20 whose luminous efficiency is prevented from degradation can be advantageously used and a predetermined light emission color can be obtained by thewhite LED device 20. -
LED chip 33 ofwhite LED device 40 according to this embodiment uses a configuration in which a P pole and an N pole are provided on its upper surface, and is mounted onmetal substrate 1 without using a sub-mount therebetween. Other basic configuration is the same as that of the first embodiment, so its detailed description will be omitted. - A plated layer (e.g., a gold-plated layer) is formed on a lower surface of
LED chip 33 where the P pole and the N pole are not formed, so as to be adapted to soldering. The lower surface ofLED chip 33 faces to be bonded withmetal substrate 1 bysoft solder 6. The P pole and the N pole are electrically connected to the wiring layers 3 by theelectrical connection wirings 10. Namely, in the present exemplary embodiment, as described above, the P pole and the N pole are formed on the upper surface ofLED chip 33 and are not formed on the lower surface ofLED chip 33, so insulation by a sub-mount is not necessary. Also, a hard solder for bonding the sub-mount is not required. Namely, in the present exemplary embodiment, heat resistance fromLED chip 33 tometal substrate 1 is diminished, heat releasing is accelerated to effectively reduce degradation by heat generated fromphosphor 22. In addition, because a change in the light emission wavelength ofphosphor 22 is prevented, a predetermined light emission color can be obtained by thewhite LED 40. - Further, because
LED chip 33 according to the present exemplary embodiment does not require a sub-mount or a hard solder, the fabrication process can be simplified and the number of components of the device can be reduced. - Moreover, in the present exemplary embodiment, because the electrical connection wirings 10 do not need to be drawn out of a sub-mount, the mounting area may be equal to the area corresponding to the LED chip, and accordingly, the device can be reduced in size.
-
Glass member 12 according to an exemplary embodiment of the present invention may have a shape based on light distribution characteristics of the LED chip as shown inFIGs. 3 and4 . - As shown in
FIG. 3(a) , when the light distribution characteristics ofLED chip 13 is concentrated to a front side,glass member 12 may have a lens shape with its central portion convex as shown inFIGs. 3(a) and 3(b) . Meanwhile,FIG. 3(a) illustratesglass member 12 in the shape of a solid-core hemisphere, andFIG. 3(b) illustratesglass member 12 in the shape of a hallow hemisphere. - If the light distribution characteristics of
LED chip 13 shows diffused light distribution as shown inFIG. 4(a) ,glass member 12 may have the shape of a flat lens as shown inFIGs. 4(a) and 4(b) . Meanwhile,FIG. 4(a) illustratesglass member 12 in the shape of a solid-core hemisphere, andFIG. 4(b) illustratesglass member 12 in the shape of a hallow hemisphere. - In this manner, a uniform light emission color can be obtained by shaping
glass member 12 according to the light distribution characteristics. - As shown in
FIG. 5 ,glass member 12 according to an exemplary embodiment of the present invention may have a laminated structure including afirst glass layer 12a,second glass layer 12b, andthird glass layer 12c. In this case, each ofglass layers 12a to 12c may contain aunicolor phosphor 22. With such configuration, distribution deficiency or deflection ofphosphor 22 in each color may be prevented. Meanwhile, the number of laminated layers is not limited to the three layers. That is,glass member 12 may have a two-layer structure or may have a four or more-layer structure. Also, the phosphor contained in each glass layer is not limited to a single color. For example, if the glass layer has a two-layer structure, one of the layers may be unicolor while the other may have two or more colors. If a four-color phosphor is in use, each layer may contain a two-color phosphor. - Meanwhile, the laminated structure of the glass member is not limited to the laminating of the glass layers in the planar shape as shown in
FIG. 5 but the curved glass members as shown inFIGs. 3(b) or4(b) may be laminated. - As shown in
FIG. 6 , sealingresin 11 may containdiffuser 23 made of powder type silica or the like. Withdiffuser 23 contained in sealingresin 11, the light distribution ofLED chip 13 may become uniform. -
FIG. 7 is a side-sectional view showing the configuration of a white LED including protection members for protecting the glass member. -
Glass member 12 containsphosphor 22 therein, so its degree of strength is degraded compared with a glass member that does not containphosphor 22. - Thus, in order to prevent
glass member 12 from being damaged, the white LED device according to an exemplary embodiment of the present invention may be configured to haveprotection members 24 formed on both sides ofglass member 12 as shown inFIG. 7 . -
Protection members 24 prevent an external force from being directly applied toglass member 12 to thus protectglass member 12 against damage.Protection members 24 may be any member so long as it does not hinder light from being outputted fromLED chip 13 as much as possible. For example, asprotection members 24, a member such as a metal latticed guide or transparent hard glass having a higher degree of strength than that ofglass member 12 may be employed. Becauseglass member 12 is reinforced by the hard members, it cannot be deformed or damaged. - Meanwhile, conversely, a member, such as transparent gel type silicon or the like, having a higher flexibility than that of
glass member 12 may be used asprotection members 24. By sandwichingglass member 12 in between the highly flexible members, an external force can be absorbed and thusglass member 12 can be prevented from being damaged. - In the above-described configuration,
glass member 12 is disposed on sealingresin 11, but in an exemplary embodiment of the present invention,glass member 12 may be encapsulated within sealingresin 11. With this configuration, an air layer may not be interposed between sealingresin 11 andglass member 12. With the presence of an air layer, light, which has been outputted fromLED chip 13 and then passed through sealingresin 11, may be totally reflected before it enters the air layer and finally weaken and dies out within sealingresin 11. Thus,glass member 12 is encapsulated within sealingresin 11 to omit an air layer, and accordingly, light can be inputted toglass member 12 without being attenuated or dying out. - However, the coefficients of linear expansion of
glass member 12 and that of sealingresin 11 are different. Thus, stress is bound to be applied toglass member 12 encapsulated in sealingresin 11 by heat generated whenLED chip 13 emits light. - The sandwich structure of
glass member 12 sandwiched byprotection members 24 can prevent damage ofglass member 12 caused by the stress.FIG. 8 is a side-sectional view of a white LED device including a glass member having the protection members and encapsulated within the sealing resin. -
Glass member 12 sandwiched byprotection members 24 is encapsulated at a position where light outputted fromLED chip 13 and light reflected fromreflector 14 pass throughglass member 12. Namely, light fromLED chip 13 and light reflected fromreflector 14 pass throughglass member 12 and are outputted to the exterior of the main body ofwhite LED device 20. -
FIGs. 7 and8 illustrateprotection members 24 provided on both principal surfaces ofglass member 12, but the present invention is not meant to be limited thereto. For example,protection members 24 may be coated on every surface ofglass member 12 including the sides as well as both principal surfaces. - In the above-described configurations, feeding power to
LED chip 13 is made viawiring layer 3 formed on insulating layer 2. However, the present invention is not limited thereto. For example, as shown inFIG. 9 , feeding power may be made via resin-moldedlead frame 25. InFIG. 9 , a connector or the like is not illustrated. -
Lead frame 25 penetratesreflector 14, of which one end is electrically connected to an external power source (not shown) and the other end is electrically connected toelectrical connection wiring 10. - In the first exemplary embodiment, sub-mount 5 with
LED chip 13 mounted thereon andmetal substrate 1 are bonded bysoft solder 6. In the second exemplary embodiment,LED chip 33 andmetal substrate 1 are bonded bysoft solder 6. However, the bonding of LED chip-mountedsub-mount 5 orLED chip 33 withmetal substrate 1 is not limited to the soldering. For example, they may be bonded by using an adhesive material with a higher thermal conductivity than that of the soldering. As the adhesive material, a material that contains more than 90% Ag may be used. - Various embodiments have been described, and in the present invention, the above-described embodiments may be variably combined.
- An illuminating apparatus may be configured by using a single or a plurality of
white LED devices 20 that emit white light.FIGs. 10A and10B illustrate exterior perspective views of LED illuminating apparatus according to an exemplary embodiment of the present invention.FIG. 10A is a side-sectional view of the LED illuminating apparatus, andFIG. 10B is a plan view of the LED illuminating apparatus. InFIG. 10B , an accommodating container is omitted. - The
LED illuminating apparatus 26 includes a plurality ofwhite LED devices 20 arranged in a matrix form onsupport substrate 27 and accommodatingcontainer 28 that accommodateswhite LED devices 20. - Meanwhile,
FIGs. 10A and10B illustrate the illuminating apparatus having the plurality ofwhite LED devices 20, but the present invention is not limited thereto and the illuminating apparatus may be configured only with a singlewhite LED device 20. - This application claims priority of Japanese Patent Application Nos.
2007-051378 2008-039916
Claims (12)
- A LED device comprising:an LED chip mounted on a substrate made of metal;a sealing resin that seals the LED chip; anda glass member formed on the sealing resin or encapsulated at a position within the sealing resin where light, which is emitted from the LED chip and outputted to the exterior of the device body, passes through,wherein the glass member contains phosphor and thermal conductivity of the sealing resin is lower than that of the glass member.
- The LED device according to claim 1, wherein a light emission wavelength of the LED chip ranges from 250 nm to 500 nm.
- The LED device according to claim 1 or 2, wherein the glass member has a sectional shape according to light distribution characteristics of the LED chip.
- The LED device according to any one of claims 1 to 3, wherein the glass member comprises a plurality of glass layers, and each glass layer contains at least one color of phosphor.
- The LED device according to any one of claims 1 to 4, wherein the glass member is sandwiched by protection members.
- The LED device according to claim 5, wherein the protection members are made of a material harder than the glass member.
- The LED device according to claim 5, wherein the protection members are made of a material softer than the glass member.
- The LED device according to any one of claims 1 to 7, wherein the sealing resin contains a diffuser.
- The LED device according to any one of claims 1 to 8, wherein the LED chip and the substrate are bonded by soldering or bonded by an adhesive material having thermal conductivity higher than that of soldering.
- The LED device according to any one of claims 1 to 9, wherein the substrate comprises a connector for an electrical connection with the exterior.
- The LED device according to any one of claim 1 to 10, wherein feeding power to the LED chip is made via a lead frame.
- An illuminating apparatus comprising the LED device recited in any one of claims 1 to 11.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2007051378 | 2007-03-01 | ||
JP2008039916 | 2008-02-21 | ||
PCT/JP2008/053611 WO2008105527A1 (en) | 2007-03-01 | 2008-02-29 | Led device and illuminating apparatus |
Publications (2)
Publication Number | Publication Date |
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EP2120271A1 true EP2120271A1 (en) | 2009-11-18 |
EP2120271A4 EP2120271A4 (en) | 2015-03-25 |
Family
ID=39721349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP08712133.1A Withdrawn EP2120271A4 (en) | 2007-03-01 | 2008-02-29 | Led device and illuminating apparatus |
Country Status (5)
Country | Link |
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US (1) | US20100102344A1 (en) |
EP (1) | EP2120271A4 (en) |
JP (1) | JPWO2008105527A1 (en) |
TW (1) | TW200849672A (en) |
WO (1) | WO2008105527A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006112417A1 (en) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
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US10672960B2 (en) * | 2017-10-19 | 2020-06-02 | Lumileds Llc | Light emitting device package with a coating layer |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040207998A1 (en) * | 2003-03-10 | 2004-10-21 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20040257797A1 (en) * | 2003-06-18 | 2004-12-23 | Yoshinobu Suehiro | Light emitting device |
US20060091788A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
WO2007004572A1 (en) * | 2005-06-30 | 2007-01-11 | Matsushita Electric Works, Ltd. | Light emitting device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3688162B2 (en) * | 1999-10-08 | 2005-08-24 | 日本電信電話株式会社 | Optical module |
JP2002134795A (en) * | 2000-10-27 | 2002-05-10 | Sanken Electric Co Ltd | Semiconductor light-emitting device and manufacturing method therefor |
JP2004200531A (en) * | 2002-12-20 | 2004-07-15 | Stanley Electric Co Ltd | Surface-mounted type led element |
DE102004063978B4 (en) * | 2003-07-17 | 2019-01-24 | Toyoda Gosei Co., Ltd. | Light-emitting device |
JP4525907B2 (en) * | 2003-08-04 | 2010-08-18 | 株式会社ファインラバー研究所 | Green light emitting phosphor and light emitting device |
JP4480407B2 (en) * | 2004-01-29 | 2010-06-16 | 京セラ株式会社 | Light emitting element storage package and light emitting device |
JP4471356B2 (en) * | 2004-04-23 | 2010-06-02 | スタンレー電気株式会社 | Semiconductor light emitting device |
JP2006054396A (en) * | 2004-08-16 | 2006-02-23 | Toshiba Discrete Technology Kk | Light-emitting device |
JP4432724B2 (en) * | 2004-10-22 | 2010-03-17 | パナソニック電工株式会社 | Illumination light source manufacturing method and illumination light source |
US20060124953A1 (en) * | 2004-12-14 | 2006-06-15 | Negley Gerald H | Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same |
EP1840977A4 (en) * | 2004-12-24 | 2009-07-29 | Kyocera Corp | Light-emitting device and illuminating device |
US20090314989A1 (en) * | 2005-05-11 | 2009-12-24 | Masaru Iwao | Fluorescent substance composite glass, fluorescent substance composite glass green sheet, and process for producing fluorescent substance composite glass |
JP4905630B2 (en) * | 2005-07-14 | 2012-03-28 | 東芝ライテック株式会社 | Lighting device |
US7842960B2 (en) * | 2006-09-06 | 2010-11-30 | Lumination Llc | Light emitting packages and methods of making same |
JP2008115223A (en) * | 2006-11-01 | 2008-05-22 | Nec Lighting Ltd | Phosphor-containing glass sheet, method for producing the same and light-emitting device |
US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
-
2008
- 2008-02-29 US US12/529,392 patent/US20100102344A1/en not_active Abandoned
- 2008-02-29 EP EP08712133.1A patent/EP2120271A4/en not_active Withdrawn
- 2008-02-29 WO PCT/JP2008/053611 patent/WO2008105527A1/en active Application Filing
- 2008-02-29 JP JP2009501316A patent/JPWO2008105527A1/en active Pending
- 2008-03-03 TW TW097107307A patent/TW200849672A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040207998A1 (en) * | 2003-03-10 | 2004-10-21 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20040257797A1 (en) * | 2003-06-18 | 2004-12-23 | Yoshinobu Suehiro | Light emitting device |
US20060091788A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
WO2007004572A1 (en) * | 2005-06-30 | 2007-01-11 | Matsushita Electric Works, Ltd. | Light emitting device |
Non-Patent Citations (1)
Title |
---|
See also references of WO2008105527A1 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012056378A1 (en) * | 2010-10-27 | 2012-05-03 | Koninklijke Philips Electronics N.V. | Laminate support film for fabrication of light emitting devices and method its fabrication |
US9351348B2 (en) | 2010-10-27 | 2016-05-24 | Koninklijke Philips N.V. | Laminate support film for fabrication of light emitting devices and method of fabrication |
US8822032B2 (en) | 2010-10-28 | 2014-09-02 | Corning Incorporated | Phosphor containing glass frit materials for LED lighting applications |
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US10017849B2 (en) | 2012-11-29 | 2018-07-10 | Corning Incorporated | High rate deposition systems and processes for forming hermetic barrier layers |
US9202996B2 (en) | 2012-11-30 | 2015-12-01 | Corning Incorporated | LED lighting devices with quantum dot glass containment plates |
WO2014159894A1 (en) * | 2013-03-14 | 2014-10-02 | Corning Incorporated | Led lighting devices |
CN105453262A (en) * | 2013-03-14 | 2016-03-30 | 康宁股份有限公司 | Led lighting devices |
US10439109B2 (en) | 2013-08-05 | 2019-10-08 | Corning Incorporated | Luminescent coatings and devices |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008105527A1 (en) | 2010-06-03 |
EP2120271A4 (en) | 2015-03-25 |
WO2008105527A1 (en) | 2008-09-04 |
TW200849672A (en) | 2008-12-16 |
US20100102344A1 (en) | 2010-04-29 |
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