EP1877530A4 - Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems - Google Patents
Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systemsInfo
- Publication number
- EP1877530A4 EP1877530A4 EP06749725A EP06749725A EP1877530A4 EP 1877530 A4 EP1877530 A4 EP 1877530A4 EP 06749725 A EP06749725 A EP 06749725A EP 06749725 A EP06749725 A EP 06749725A EP 1877530 A4 EP1877530 A4 EP 1877530A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- removal
- self
- solvent systems
- assembled monolayers
- dose ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- 239000013545 self-assembled monolayer Substances 0.000 title 1
- 239000002904 solvent Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C11D2111/22—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67185105P | 2005-04-15 | 2005-04-15 | |
PCT/US2006/013430 WO2006113222A2 (en) | 2005-04-15 | 2006-04-10 | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1877530A2 EP1877530A2 (en) | 2008-01-16 |
EP1877530A4 true EP1877530A4 (en) | 2010-06-09 |
Family
ID=37115663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06749725A Withdrawn EP1877530A4 (en) | 2005-04-15 | 2006-04-10 | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1877530A4 (en) |
JP (1) | JP2008538013A (en) |
KR (1) | KR20070121845A (en) |
CN (1) | CN101198683B (en) |
SG (1) | SG161280A1 (en) |
TW (1) | TW200700916A (en) |
WO (1) | WO2006113222A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080072905A (en) | 2005-11-09 | 2008-08-07 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
TWI494710B (en) * | 2008-05-01 | 2015-08-01 | Entegris Inc | Low ph mixtures for the removal of high density implanted resist |
GB0819274D0 (en) * | 2008-10-21 | 2008-11-26 | Plastic Logic Ltd | Method and apparatus for the formation of an electronic device |
KR101579846B1 (en) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | Composition for removing a photoresist pattern and method of forming a metal pattern using the composition |
SG177755A1 (en) * | 2009-07-30 | 2012-03-29 | Basf Se | Post ion implant stripper for advanced semiconductor application |
KR20130088847A (en) | 2010-07-16 | 2013-08-08 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Aqueous cleaner for the removal of post-etch residues |
EP2798669B1 (en) | 2011-12-28 | 2021-03-31 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
WO2003077032A1 (en) * | 2002-03-04 | 2003-09-18 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
WO2006138505A1 (en) * | 2005-06-16 | 2006-12-28 | Advanced Technology Materials, Inc. | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107166A (en) * | 1997-08-29 | 2000-08-22 | Fsi International, Inc. | Vapor phase cleaning of alkali and alkaline earth metals |
JP3410369B2 (en) * | 1998-04-28 | 2003-05-26 | 花王株式会社 | Release agent composition |
JP3474127B2 (en) * | 1998-11-13 | 2003-12-08 | 花王株式会社 | Release agent composition |
US6440856B1 (en) * | 1999-09-14 | 2002-08-27 | Jsr Corporation | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
US6613157B2 (en) * | 2001-02-15 | 2003-09-02 | Micell Technologies, Inc. | Methods for removing particles from microelectronic structures |
AU2003226048A1 (en) * | 2002-04-12 | 2003-10-27 | Supercritical Systems Inc. | Method of treatment of porous dielectric films to reduce damage during cleaning |
US6699829B2 (en) * | 2002-06-07 | 2004-03-02 | Kyzen Corporation | Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds |
-
2006
- 2006-04-10 EP EP06749725A patent/EP1877530A4/en not_active Withdrawn
- 2006-04-10 KR KR1020077026503A patent/KR20070121845A/en not_active Application Discontinuation
- 2006-04-10 SG SG201002639-1A patent/SG161280A1/en unknown
- 2006-04-10 CN CN2006800216226A patent/CN101198683B/en not_active Expired - Fee Related
- 2006-04-10 JP JP2008506595A patent/JP2008538013A/en active Pending
- 2006-04-10 WO PCT/US2006/013430 patent/WO2006113222A2/en active Application Filing
- 2006-04-14 TW TW095113365A patent/TW200700916A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
WO2003077032A1 (en) * | 2002-03-04 | 2003-09-18 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
WO2006138505A1 (en) * | 2005-06-16 | 2006-12-28 | Advanced Technology Materials, Inc. | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers |
Also Published As
Publication number | Publication date |
---|---|
JP2008538013A (en) | 2008-10-02 |
CN101198683B (en) | 2011-09-14 |
WO2006113222A3 (en) | 2007-11-08 |
SG161280A1 (en) | 2010-05-27 |
TW200700916A (en) | 2007-01-01 |
EP1877530A2 (en) | 2008-01-16 |
KR20070121845A (en) | 2007-12-27 |
WO2006113222A2 (en) | 2006-10-26 |
CN101198683A (en) | 2008-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20071115 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK YU |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20100511 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C11D 3/44 20060101ALI20100504BHEP Ipc: C11D 3/43 20060101ALI20100504BHEP Ipc: C11D 3/30 20060101ALI20100504BHEP Ipc: C11D 3/20 20060101ALI20100504BHEP Ipc: C11D 1/72 20060101ALI20100504BHEP Ipc: C11D 1/02 20060101ALI20100504BHEP Ipc: C11D 1/00 20060101ALI20100504BHEP Ipc: G03F 7/42 20060101ALI20100504BHEP Ipc: H01L 21/311 20060101AFI20100504BHEP |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C11D 3/30 20060101ALI20120827BHEP Ipc: C11D 7/22 20060101ALI20120827BHEP Ipc: C11D 7/32 20060101ALI20120827BHEP Ipc: C11D 7/50 20060101ALI20120827BHEP Ipc: G03F 7/42 20060101ALI20120827BHEP Ipc: C11D 3/28 20060101ALI20120827BHEP Ipc: C11D 11/00 20060101ALI20120827BHEP Ipc: C11D 3/43 20060101ALI20120827BHEP Ipc: H01L 21/311 20060101AFI20120827BHEP Ipc: C11D 3/16 20060101ALI20120827BHEP Ipc: B82Y 30/00 20110101ALI20120827BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20130206 |