EP1484644A3 - Mould, pattern of nano wires, multiplexer/demultiplexer and method of making same - Google Patents

Mould, pattern of nano wires, multiplexer/demultiplexer and method of making same Download PDF

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Publication number
EP1484644A3
EP1484644A3 EP04252735A EP04252735A EP1484644A3 EP 1484644 A3 EP1484644 A3 EP 1484644A3 EP 04252735 A EP04252735 A EP 04252735A EP 04252735 A EP04252735 A EP 04252735A EP 1484644 A3 EP1484644 A3 EP 1484644A3
Authority
EP
European Patent Office
Prior art keywords
mould
pattern
nanowires
demultiplexer
multiplexer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04252735A
Other languages
German (de)
French (fr)
Other versions
EP1484644A2 (en
Inventor
Pavel Kornilovich
Yong Chen
Duncan Stewart
Stanley R. Williams
Philip J. Kuekes
Mehmet Fatih Yanik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of EP1484644A2 publication Critical patent/EP1484644A2/en
Publication of EP1484644A3 publication Critical patent/EP1484644A3/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/009—Manufacturing the stamps or the moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152

Abstract

A mould (110) with a protruding pattern (110a, 110b) is provided that is pressed into a thin polymer film (112, 312) via an imprinting process. Controlled connections between nanowires (118, 318) and microwires (116, 316) and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights (12a, 12b, 12c) in the Z direction. The stamp thus formed can be used to connect specific individual nanowires (118, 318) to specific microscopic regions of microscopic wires (116, 316) or pads. The protruding pattern (110a, 110b) in the mould (110) creates recesses (112a, 112b) in the thin polymer film (112, 312), so the polymer layer acquires the reverse of the pattern on the mould (110). After the mould (110) is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate (114, 314).
Figure imgaf001
Figure imgaf002
EP04252735A 2003-06-02 2004-05-12 Mould, pattern of nano wires, multiplexer/demultiplexer and method of making same Withdrawn EP1484644A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US453329 2003-06-02
US10/453,329 US7256435B1 (en) 2003-06-02 2003-06-02 Multilevel imprint lithography

Publications (2)

Publication Number Publication Date
EP1484644A2 EP1484644A2 (en) 2004-12-08
EP1484644A3 true EP1484644A3 (en) 2006-04-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP04252735A Withdrawn EP1484644A3 (en) 2003-06-02 2004-05-12 Mould, pattern of nano wires, multiplexer/demultiplexer and method of making same

Country Status (3)

Country Link
US (2) US7256435B1 (en)
EP (1) EP1484644A3 (en)
JP (1) JP4216766B2 (en)

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US7602069B2 (en) * 2004-03-31 2009-10-13 Universität Duisburg-Essen Micro electronic component with electrically accessible metallic clusters
US8025831B2 (en) * 2004-05-24 2011-09-27 Agency For Science, Technology And Research Imprinting of supported and free-standing 3-D micro- or nano-structures
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
US7442029B2 (en) * 2005-05-16 2008-10-28 Asml Netherlands B.V. Imprint lithography
CN101189720A (en) * 2005-06-06 2008-05-28 Nxp股份有限公司 Method for manufacturing a crossbar circuit device
KR20070010472A (en) * 2005-07-19 2007-01-24 삼성전자주식회사 Hybrid type polarizer, method for manufacturing thereof and display device having the same
JP4876261B2 (en) * 2005-10-25 2012-02-15 国立大学法人北海道大学 Method for producing patterned material
FR2893018B1 (en) * 2005-11-09 2008-03-14 Commissariat Energie Atomique METHOD OF FORMING MEDIA HAVING PATTERNS, SUCH AS LITHOGRAPHIC MASKS
JP5213335B2 (en) * 2006-02-01 2013-06-19 キヤノン株式会社 Imprint mold and method for producing structure using the mold
DE102006030267B4 (en) * 2006-06-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Nano embossing technique with increased flexibility in terms of adjustment and shaping of structural elements
WO2008138361A1 (en) * 2007-05-09 2008-11-20 Technische Universität München Mold for generating nanostructures, and mold holder unit
US8641912B2 (en) 2007-05-23 2014-02-04 California Institute Of Technology Method for fabricating monolithic two-dimensional nanostructures
JP5004225B2 (en) * 2007-09-19 2012-08-22 独立行政法人産業技術総合研究所 Mold manufacturing method for imprint lithography
WO2009078881A1 (en) * 2007-12-19 2009-06-25 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and method
US8466068B2 (en) * 2007-12-31 2013-06-18 Sandisk 3D Llc Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography
US20100301449A1 (en) * 2007-12-31 2010-12-02 Sandisk 3D Llc Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography
US8114787B2 (en) * 2009-02-19 2012-02-14 Empire Technology Development Llc Integrated circuit nanowires
FR2942738B1 (en) * 2009-03-03 2016-04-15 Commissariat A L'energie Atomique METHOD FOR MANUFACTURING A MOLD FOR NANO-PRINTING LITHOGRAPHY
FR2942739B1 (en) * 2009-03-03 2011-05-13 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MOLD FOR NANO-PRINTING LITHOGRAPHY
US8207058B1 (en) 2009-06-29 2012-06-26 Georgia Tech Research Corporation Electron beam induced deposition of interface to carbon nanotube
US8450131B2 (en) 2011-01-11 2013-05-28 Nanohmics, Inc. Imprinted semiconductor multiplex detection array
US8848183B2 (en) 2011-07-22 2014-09-30 Hewlett-Packard Development Company, L.P. Apparatus having nano-fingers of different physical characteristics
US8883639B2 (en) * 2012-01-25 2014-11-11 Freescale Semiconductor, Inc. Semiconductor device having a nanotube layer and method for forming
US20140251671A1 (en) * 2013-03-05 2014-09-11 David Paul Trauernicht Micro-channel with conductive particle
US9215798B2 (en) * 2013-03-05 2015-12-15 Eastman Kodak Company Imprinted multi-layer micro-structure method with multi-level stamp
US20140251660A1 (en) * 2013-03-05 2014-09-11 Ronald Steven Cok Variable-depth micro-channel structure
EP2863291A1 (en) 2013-10-18 2015-04-22 Applied Materials, Inc. Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel
KR102380203B1 (en) * 2016-07-27 2022-03-29 코닌클리케 필립스 엔.브이. Methods for making polyorganosiloxane-based stamps, polyorganosiloxane-based stamps, their use for printing processes, and imprinting methods using the same

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EP1333324A2 (en) * 2002-01-31 2003-08-06 Hewlett-Packard Company Nano-size imprinting stamp
EP1376663A2 (en) * 2002-06-28 2004-01-02 Hewlett-Packard Development Company, L.P. Method and system for forming a semiconductor device
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Also Published As

Publication number Publication date
US20100112809A1 (en) 2010-05-06
JP2004363584A (en) 2004-12-24
EP1484644A2 (en) 2004-12-08
JP4216766B2 (en) 2009-01-28
US7803712B2 (en) 2010-09-28
US7256435B1 (en) 2007-08-14

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