DE68917807D1 - Speicheranordnung mit schwebendem Gate. - Google Patents

Speicheranordnung mit schwebendem Gate.

Info

Publication number
DE68917807D1
DE68917807D1 DE68917807T DE68917807T DE68917807D1 DE 68917807 D1 DE68917807 D1 DE 68917807D1 DE 68917807 T DE68917807 T DE 68917807T DE 68917807 T DE68917807 T DE 68917807T DE 68917807 D1 DE68917807 D1 DE 68917807D1
Authority
DE
Germany
Prior art keywords
memory array
floating gate
gate memory
floating
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917807T
Other languages
English (en)
Other versions
DE68917807T2 (de
Inventor
Fabio Beltram
Federico Capasso
Roger J Malik
Nitin J Shah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE68917807D1 publication Critical patent/DE68917807D1/de
Application granted granted Critical
Publication of DE68917807T2 publication Critical patent/DE68917807T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H01L29/803—Programmable transistors, e.g. with charge-trapping quantum well
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
DE68917807T 1988-06-21 1989-06-15 Speicheranordnung mit schwebendem Gate. Expired - Fee Related DE68917807T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/209,466 US4905063A (en) 1988-06-21 1988-06-21 Floating gate memories
SG154594A SG154594G (en) 1988-06-21 1994-10-21 Floating gate memories

Publications (2)

Publication Number Publication Date
DE68917807D1 true DE68917807D1 (de) 1994-10-06
DE68917807T2 DE68917807T2 (de) 1995-01-05

Family

ID=26664455

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917807T Expired - Fee Related DE68917807T2 (de) 1988-06-21 1989-06-15 Speicheranordnung mit schwebendem Gate.

Country Status (7)

Country Link
US (1) US4905063A (de)
EP (1) EP0348099B1 (de)
JP (1) JPH0272673A (de)
CA (1) CA1327078C (de)
DE (1) DE68917807T2 (de)
HK (1) HK5095A (de)
SG (1) SG154594G (de)

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US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5147817A (en) * 1990-11-16 1992-09-15 Texas Instruments Incorporated Method for forming programmable resistive element
US5432356A (en) * 1993-04-02 1995-07-11 Fujitsu Limited Semiconductor heterojunction floating layer memory device and method for storing information in the same
JP2973876B2 (ja) * 1995-07-07 1999-11-08 日本電気株式会社 化合物半導体メモリ
US6654847B1 (en) * 2000-06-30 2003-11-25 Micron Technology, Inc. Top/bottom symmetrical protection scheme for flash
FR2818012B1 (fr) * 2000-12-12 2003-02-21 St Microelectronics Sa Dispositif semi-conducteur integre de memoire
US7456476B2 (en) * 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6909151B2 (en) * 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7027557B2 (en) * 2004-05-13 2006-04-11 Jorge Llacer Method for assisted beam selection in radiation therapy planning
US7579280B2 (en) * 2004-06-01 2009-08-25 Intel Corporation Method of patterning a film
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US7348284B2 (en) * 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7422946B2 (en) 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20060202266A1 (en) * 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7279375B2 (en) * 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7402875B2 (en) * 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US20070090416A1 (en) * 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7479421B2 (en) * 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US20070090408A1 (en) * 2005-09-29 2007-04-26 Amlan Majumdar Narrow-body multiple-gate FET with dominant body transistor for high performance
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
US7494850B2 (en) * 2006-02-15 2009-02-24 International Business Machines Corporation Ultra-thin logic and backgated ultra-thin SRAM
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
DE102006059110A1 (de) * 2006-12-08 2008-06-12 Technische Universität Berlin Speicherzelle und Verfahren zum Speichern von Daten
US20080157225A1 (en) * 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
GB201418888D0 (en) * 2014-10-23 2014-12-10 Univ Lancaster Improvements relating to electronic memory devices
US9590084B2 (en) * 2014-11-26 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Graded heterojunction nanowire device
US11073551B2 (en) * 2018-08-16 2021-07-27 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for wafer-level testing
US11448692B2 (en) * 2018-08-16 2022-09-20 Taiwann Semiconductor Manufacturing Company Ltd. Method and device for wafer-level testing
DE102021106795A1 (de) 2020-10-16 2022-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren und vorrichtung für eine prüfung auf waferebene
JP2022145020A (ja) 2021-03-19 2022-10-03 キオクシア株式会社 メモリシステム
CN113594167B (zh) * 2021-07-29 2024-03-12 上海集成电路制造创新中心有限公司 非易失性可编程异质结存储器

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US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA1215975A (en) * 1981-11-02 1986-12-30 Paul W. Collins Process for preparing delta 2,3 and delta 3,4 prostaglandins
JPS58128093A (ja) * 1982-01-22 1983-07-30 Mitsubishi Electric Corp 不揮発性半導体メモリ装置
FR2542490B1 (fr) * 1983-03-11 1988-10-07 Efcis Memoire permanente a transistors a grille flottante, electriquement reprogrammable sans effacement prealable
JPS6176666A (ja) * 1984-09-20 1986-04-19 Fujitsu General Ltd スパツタリング装置
US4763177A (en) * 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
JPS61241968A (ja) * 1985-04-19 1986-10-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体記憶装置
JPS6235572A (ja) * 1985-08-08 1987-02-16 Omron Tateisi Electronics Co 半導体不揮発性メモリ素子
FR2600821B1 (fr) * 1986-06-30 1988-12-30 Thomson Csf Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
US4821093A (en) * 1986-08-18 1989-04-11 The United States Of America As Represented By The Secretary Of The Army Dual channel high electron mobility field effect transistor
US4766473A (en) * 1986-12-29 1988-08-23 Motorola, Inc. Single transistor cell for electrically-erasable programmable read-only memory and array thereof

Also Published As

Publication number Publication date
EP0348099B1 (de) 1994-08-31
JPH0272673A (ja) 1990-03-12
DE68917807T2 (de) 1995-01-05
HK5095A (en) 1995-01-20
EP0348099A3 (en) 1990-08-22
US4905063A (en) 1990-02-27
CA1327078C (en) 1994-02-15
EP0348099A2 (de) 1989-12-27
SG154594G (en) 1995-03-17

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee