DE50113806D1 - Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren - Google Patents
Grabenkondensator mit Isolationskragen und entsprechendes HerstellungsverfahrenInfo
- Publication number
- DE50113806D1 DE50113806D1 DE50113806T DE50113806T DE50113806D1 DE 50113806 D1 DE50113806 D1 DE 50113806D1 DE 50113806 T DE50113806 T DE 50113806T DE 50113806 T DE50113806 T DE 50113806T DE 50113806 D1 DE50113806 D1 DE 50113806D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- trench capacitor
- corresponding manufacturing
- insulation collar
- collar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10034003A DE10034003A1 (de) | 2000-07-07 | 2000-07-07 | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
DE50113806D1 true DE50113806D1 (de) | 2008-05-15 |
Family
ID=7648752
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10034003A Ceased DE10034003A1 (de) | 2000-07-07 | 2000-07-07 | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
DE50113806T Expired - Fee Related DE50113806D1 (de) | 2000-07-07 | 2001-06-27 | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10034003A Ceased DE10034003A1 (de) | 2000-07-07 | 2000-07-07 | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US20020014647A1 (de) |
EP (1) | EP1170804B1 (de) |
DE (2) | DE10034003A1 (de) |
TW (1) | TWI225707B (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
DE10114956C2 (de) * | 2001-03-27 | 2003-06-18 | Infineon Technologies Ag | Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator |
US6753618B2 (en) * | 2002-03-11 | 2004-06-22 | Micron Technology, Inc. | MIM capacitor with metal nitride electrode materials and method of formation |
DE10211544C1 (de) * | 2002-03-15 | 2003-11-27 | Infineon Technologies Ag | Verfahren zur Herstellung einer Kondensatorelektrode eines Grabenkondensators aus flüssiger Phase |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US20030235961A1 (en) * | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US6897508B2 (en) * | 2002-05-01 | 2005-05-24 | Sundew Technologies, Llc | Integrated capacitor with enhanced capacitance density and method of fabricating same |
US6858547B2 (en) * | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US20030232501A1 (en) | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
DE10234734A1 (de) | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verwendung von Masken aus Metalloxiden zur Bearbeitung von Oberflächen bei der Herstellung von Mikrochips |
US6921702B2 (en) * | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
DE10234735A1 (de) | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum vertikalen Strukturieren von Substraten in der Halbleiterprozesstechnik mittels inkonformer Abscheidung |
DE10240106A1 (de) * | 2002-08-30 | 2004-03-11 | Infineon Technologies Ag | Ausbildung einer elektrischen Verbindung zwischen Strkturen in einem Halbleitersubstrat |
TW554521B (en) * | 2002-09-16 | 2003-09-21 | Nanya Technology Corp | Process for forming a bottle-shaped trench |
US7101813B2 (en) * | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
KR101159070B1 (ko) * | 2003-03-11 | 2012-06-25 | 삼성전자주식회사 | 고유전율 산화막 형성방법, 이 방법으로 형성된 유전막이구비된 커패시터 및 그 제조방법 |
US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US6909137B2 (en) | 2003-04-07 | 2005-06-21 | International Business Machines Corporation | Method of creating deep trench capacitor using a P+ metal electrode |
US6967137B2 (en) * | 2003-07-07 | 2005-11-22 | International Business Machines Corporation | Forming collar structures in deep trench capacitors with thermally stable filler material |
JP3956225B2 (ja) * | 2003-08-26 | 2007-08-08 | 株式会社トリケミカル研究所 | 膜形成方法 |
DE10344039B4 (de) * | 2003-09-23 | 2011-06-01 | Qimonda Ag | Elektrisch programmierbarer nichtflüchtiger Speicher auf Basis eines Schwellwert veränderbaren MOSFET und ein Verfahren zu dessen Herstellung |
DE102004019090B4 (de) * | 2004-04-20 | 2006-05-04 | Infineon Technologies Ag | Grabenkondensator mit Isolationskragen |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US20060062917A1 (en) * | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US20060153995A1 (en) * | 2004-05-21 | 2006-07-13 | Applied Materials, Inc. | Method for fabricating a dielectric stack |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US7588988B2 (en) * | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
KR100728962B1 (ko) * | 2004-11-08 | 2007-06-15 | 주식회사 하이닉스반도체 | 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법 |
DE102004059668B3 (de) * | 2004-12-10 | 2006-07-13 | Infineon Technologies Ag | Halbleitertechnologieverfahren zur Herstellung einer leitfähigen Schicht |
KR20060072338A (ko) * | 2004-12-23 | 2006-06-28 | 주식회사 하이닉스반도체 | 유전체막 형성방법 및 이를 이용한 반도체 소자의캐패시터 형성방법 |
US20070020890A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Method and apparatus for semiconductor processing |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US20070049043A1 (en) * | 2005-08-23 | 2007-03-01 | Applied Materials, Inc. | Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement |
US7402534B2 (en) * | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
KR100648860B1 (ko) * | 2005-09-08 | 2006-11-24 | 주식회사 하이닉스반도체 | 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법 |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
KR100670747B1 (ko) | 2005-11-28 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조 방법 |
US7294554B2 (en) * | 2006-02-10 | 2007-11-13 | International Business Machines Corporation | Method to eliminate arsenic contamination in trench capacitors |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
US20070252299A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Synchronization of precursor pulsing and wafer rotation |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7846791B2 (en) * | 2007-11-08 | 2010-12-07 | International Business Machines Corporation | Structure for a trench capacitor |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
US8491967B2 (en) | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US20110298089A1 (en) * | 2010-06-03 | 2011-12-08 | International Business Machines Corporation | Trench capacitor and method of fabrication |
US8502293B2 (en) * | 2010-12-22 | 2013-08-06 | Intel Corporation | Capacitor with recessed plate portion for dynamic random access memory (DRAM) and method to form the same |
US20130075801A1 (en) * | 2011-09-23 | 2013-03-28 | Infineon Technologies Austria Ag | Self-adjusted capacitive structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2575335B1 (fr) * | 1984-12-21 | 1987-06-19 | Thomson Csf | Element capacitif integre sur une pastille de circuit integre, et procede de realisation de cet element capacitif |
JPH04328861A (ja) * | 1991-04-26 | 1992-11-17 | Texas Instr Japan Ltd | 半導体集積回路装置及びその製造方法 |
RU2082258C1 (ru) * | 1991-08-14 | 1997-06-20 | Сименс АГ | Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления |
JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US5998821A (en) * | 1997-05-21 | 1999-12-07 | Kabushiki Kaisha Toshiba | Dynamic ram structure having a trench capacitor |
US6310375B1 (en) * | 1998-04-06 | 2001-10-30 | Siemens Aktiengesellschaft | Trench capacitor with isolation collar and corresponding manufacturing method |
US6018174A (en) * | 1998-04-06 | 2000-01-25 | Siemens Aktiengesellschaft | Bottle-shaped trench capacitor with epi buried layer |
US5945704A (en) * | 1998-04-06 | 1999-08-31 | Siemens Aktiengesellschaft | Trench capacitor with epi buried layer |
KR20000013654A (ko) * | 1998-08-12 | 2000-03-06 | 윤종용 | 원자층 증착 방법으로 형성한 알루미나/알루미늄나이트라이드복합 유전체막을 갖는 캐패시터와 그제조 방법 |
US6034390A (en) * | 1999-06-25 | 2000-03-07 | Infineon Technologies North America Corp. | Multi-bit trench capacitor |
TW426947B (en) * | 1999-12-09 | 2001-03-21 | Mosel Vitelic Inc | Method of producing trench capacitor |
-
2000
- 2000-07-07 DE DE10034003A patent/DE10034003A1/de not_active Ceased
-
2001
- 2001-06-27 EP EP01115516A patent/EP1170804B1/de not_active Expired - Lifetime
- 2001-06-27 DE DE50113806T patent/DE50113806D1/de not_active Expired - Fee Related
- 2001-06-28 TW TW090115833A patent/TWI225707B/zh not_active IP Right Cessation
- 2001-07-06 US US09/899,189 patent/US20020014647A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1170804B1 (de) | 2008-04-02 |
DE10034003A1 (de) | 2002-01-24 |
EP1170804A3 (de) | 2004-06-09 |
US20020014647A1 (en) | 2002-02-07 |
TWI225707B (en) | 2004-12-21 |
EP1170804A2 (de) | 2002-01-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |