DE3867870D1 - Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese. - Google Patents

Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese.

Info

Publication number
DE3867870D1
DE3867870D1 DE8888104251T DE3867870T DE3867870D1 DE 3867870 D1 DE3867870 D1 DE 3867870D1 DE 8888104251 T DE8888104251 T DE 8888104251T DE 3867870 T DE3867870 T DE 3867870T DE 3867870 D1 DE3867870 D1 DE 3867870D1
Authority
DE
Germany
Prior art keywords
deposition
coating
gas phase
perforated nozzle
perforated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104251T
Other languages
English (en)
Inventor
Fumitake C O Fujitsu Lim Mieno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3867870D1 publication Critical patent/DE3867870D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
DE8888104251T 1987-03-17 1988-03-17 Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese. Expired - Fee Related DE3867870D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62061811A JPS63227011A (ja) 1987-03-17 1987-03-17 化学気相成長装置

Publications (1)

Publication Number Publication Date
DE3867870D1 true DE3867870D1 (de) 1992-03-05

Family

ID=13181844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888104251T Expired - Fee Related DE3867870D1 (de) 1987-03-17 1988-03-17 Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese.

Country Status (5)

Country Link
US (1) US4825809A (de)
EP (1) EP0283007B1 (de)
JP (1) JPS63227011A (de)
KR (1) KR910008793B1 (de)
DE (1) DE3867870D1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US4993360A (en) * 1988-03-28 1991-02-19 Kabushiki Kaisha Toshiba Vapor growth apparatus having a diffuser section containing a flow regulating member
US4979465A (en) * 1989-04-03 1990-12-25 Daidousanso Co., Ltd. Apparatus for producing semiconductors
US4927359A (en) * 1989-04-03 1990-05-22 General Electric Company Fluid distribution apparatus
US4987856A (en) * 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
JP2506451B2 (ja) * 1989-08-18 1996-06-12 富士通株式会社 化学気相成長装置及び化学気相成長法
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
DE4011933C2 (de) * 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
CA2016970A1 (en) * 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
JPH0433330A (ja) * 1990-05-30 1992-02-04 Fujitsu Ltd 気相成長装置
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5174825A (en) * 1990-08-23 1992-12-29 Texas Instruments Incorporated Uniform gas distributor to a wafer
FR2670507B1 (fr) * 1990-12-18 1993-12-31 Propulsion Ste Europeenne Procede d'infiltration chimique en phase vapeur.
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
GB9206442D0 (en) * 1992-03-25 1992-05-06 Metal Research Semiconductors Treatment chamber
US5458685A (en) * 1992-08-12 1995-10-17 Tokyo Electron Kabushiki Kaisha Vertical heat treatment apparatus
US5306345A (en) * 1992-08-25 1994-04-26 Particle Solutions Deposition chamber for deposition of particles on semiconductor wafers
US5439523A (en) * 1994-02-14 1995-08-08 Memc Electronic Materials, Inc. Device for suppressing particle splash onto a semiconductor wafer
US5425810A (en) * 1994-05-11 1995-06-20 Internation Business Machines Corporation Removable gas injectors for use in chemical vapor deposition of aluminium oxide
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
JP3901252B2 (ja) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 化学蒸着装置
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
JPH11297681A (ja) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp 高誘電率薄膜形成用ｃｖｄ装置および高誘電率薄膜の形成方法
US6461675B2 (en) 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
US6245655B1 (en) 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
KR100717583B1 (ko) * 2000-08-26 2007-05-15 주성엔지니어링(주) Ｐｅｃｖｄ 장치
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
US20040028810A1 (en) * 2000-10-16 2004-02-12 Primaxx, Inc. Chemical vapor deposition reactor and method for utilizing vapor vortex
US6428847B1 (en) * 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
US6797108B2 (en) * 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
JP2004035971A (ja) * 2002-07-05 2004-02-05 Ulvac Japan Ltd 薄膜製造装置
EP1420080A3 (de) 2002-11-14 2005-11-09 Applied Materials, Inc. Vorrichtung und Verfahren zu hybriden chemischen Abscheidungsverfahren
JPWO2004111297A1 (ja) * 2003-06-10 2006-07-20 東京エレクトロン株式会社 処理ガス供給機構、成膜装置および成膜方法
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20070128862A1 (en) * 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US20080206987A1 (en) * 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US9484213B2 (en) 2008-03-06 2016-11-01 Tokyo Electron Limited Processing gas diffusing and supplying unit and substrate processing apparatus
JP5230225B2 (ja) * 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
US8252114B2 (en) * 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
CN103147067A (zh) * 2011-12-07 2013-06-12 无锡华润华晶微电子有限公司 低压化学气相淀积装置及其薄膜淀积方法
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
CN109338464A (zh) * 2018-11-09 2019-02-15 浙江求是半导体设备有限公司 一种用于外延生长系统的气体注射装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745969A (en) * 1971-04-19 1973-07-17 Motorola Inc Offset top ejection vapor deposition apparatus
JPS5260570A (en) * 1975-11-13 1977-05-19 Toshiba Corp Vapor phase growing device
JPS6081093A (ja) * 1983-10-06 1985-05-09 Ulvac Corp 気相エピタキシヤル成長用化学反応装置
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
JPS60189928A (ja) * 1984-03-12 1985-09-27 Fujitsu Ltd 減圧気相成長装置
JPS61104080A (ja) * 1984-10-26 1986-05-22 Hitachi Ltd プラズマｃｖｄ装置の電極構造
JPS61135114A (ja) * 1984-12-06 1986-06-23 Toshiba Corp 気相成長装置
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
US5412670A (en) * 1992-11-30 1995-05-02 Ricoh Corporation N-bit parity neural network encoder

Also Published As

Publication number Publication date
KR880011890A (ko) 1988-10-31
US4825809A (en) 1989-05-02
JPH0517696B2 (de) 1993-03-09
EP0283007A3 (en) 1988-10-19
EP0283007B1 (de) 1992-01-22
EP0283007A2 (de) 1988-09-21
JPS63227011A (ja) 1988-09-21
KR910008793B1 (ko) 1991-10-21

Similar Documents

Publication Publication Date Title
DE3867870D1 (de) Vorrichtung zur beschichtung durch abscheidung aus der gasphase mit perforierter duese.
DE3884763D1 (de) Anlage zur metallorganischen chemischen Abscheidung aus der Gasphase sowie Verfahren zu deren Anwendung.
DE69301903D1 (de) Dampferzeuger für Systeme zur chemischen Beschichtung aus der Dampfphase
DE3682716D1 (de) Optisches verfahren zur herstellung von schichten aus der gasphase mit einer starken optischen intensitaet waehrend der beginnphase und vorrichtung dafuer.
DE3874307T2 (de) Vorrichtung zur kontrolle der propellerphase.
DE3672880D1 (de) Mit sio2-x ueberzogene gegenstaende durch plasmachemische abscheidung aus der dampfphase und verfahren zur herstellung solcher ueberzuege durch plasmachemische abscheidung aus der dampfphase.
DE3881044D1 (de) Ueberzuege aus sulfonierten polymerisaten zur gesteuerten naehrstoffabgabe.
DE3854307D1 (de) Hohlkathodenkanone und Vorrichtung zur Materialablagerung durch Ionenbeschichtung.
DE68922576D1 (de) Vorrichtung zur Kapillartrennung mit einer nach der Trennung durch ein elektrisches Feld unterstützten Mischung.
DE3485898D1 (de) Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
DE3851417D1 (de) Epitaxiales Wachstumsverfahren aus der Gasphase.
DE3787542D1 (de) Verfahren und vorrichtung zum niederschlagen aus der gasphase.
DE3763902D1 (de) Verfahren zur herstellung eines halbleiterelementes, einschliesslich der abscheidung von schichten auf ein substrat aus der gasphase.
DE69012409T2 (de) Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.
DE3766167D1 (de) Verfahren zur herstellung von elektrisch leitenden formkoerpern durch plasmaaktivierte chemische abscheidung aus der gasphase.
DE3782983D1 (de) Verfahren zur herstellung eines polyimidfilms durch chemische ablagerung aus der dampfphase.
SE7700229L (sv) Forfarande for beleggning av substrat genom utfellning fran ett plasma
DE69113689D1 (de) Gleitelement und Verfahren zu seiner Herstellung durch Sulfo-Nitrierung aus der Gasphase.
DE68906587T2 (de) Verfahren zur Abtrennung von Methylabkömmlingen von Naphthalen durch Druckkristallisierung.
DE68908505D1 (de) Chemische abscheidung von wismuthoxid aus der gasphase.
DE68917561T2 (de) Anlage zum chemischen Bedampfen aus der Gasphase und Bauteil zur Versorgung mit Reaktionsmitteln.
JPS52111942A (en) Equipment for applying paint
DE68908729T2 (de) Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.
DE68904230T2 (de) System zur automatischen kontrolle der deposition einer schicht in real-zeit.
ATA824177A (de) Verfahren zur reinigung von aus der zoapatl- pflanze erhaltenen extrakten

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee