DE3675444D1 - Verfahren zum zufuehren von wasserdampfhaltigem sauerstoffgas zur oberflaechenbehandlung von halbleiterwaffel. - Google Patents

Verfahren zum zufuehren von wasserdampfhaltigem sauerstoffgas zur oberflaechenbehandlung von halbleiterwaffel.

Info

Publication number
DE3675444D1
DE3675444D1 DE8686109328T DE3675444T DE3675444D1 DE 3675444 D1 DE3675444 D1 DE 3675444D1 DE 8686109328 T DE8686109328 T DE 8686109328T DE 3675444 T DE3675444 T DE 3675444T DE 3675444 D1 DE3675444 D1 DE 3675444D1
Authority
DE
Germany
Prior art keywords
waffles
semiconductor
surface treatment
oxygen gas
supplying water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686109328T
Other languages
English (en)
Inventor
Takamasa Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Application granted granted Critical
Publication of DE3675444D1 publication Critical patent/DE3675444D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B5/00—Water
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
DE8686109328T 1985-07-15 1986-07-08 Verfahren zum zufuehren von wasserdampfhaltigem sauerstoffgas zur oberflaechenbehandlung von halbleiterwaffel. Expired - Lifetime DE3675444D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60156708A JPS62104038A (ja) 1985-07-15 1985-07-15 水蒸気含有酸素ガス供給装置

Publications (1)

Publication Number Publication Date
DE3675444D1 true DE3675444D1 (de) 1990-12-13

Family

ID=15633597

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109328T Expired - Lifetime DE3675444D1 (de) 1985-07-15 1986-07-08 Verfahren zum zufuehren von wasserdampfhaltigem sauerstoffgas zur oberflaechenbehandlung von halbleiterwaffel.

Country Status (4)

Country Link
US (1) US4693208A (de)
EP (1) EP0209065B1 (de)
JP (1) JPS62104038A (de)
DE (1) DE3675444D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
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FR2643364B1 (fr) * 1989-02-22 1993-08-13 Air Liquide Procede d'elaboration de composants multicouches ceramique-metal et appareil pour sa mise en oeuvre
FR2643365B1 (fr) * 1989-02-22 1993-11-05 Air Liquide Procede de metallisation de ceramiques et appareil pour sa mise en oeuvr
JP2646990B2 (ja) * 1993-12-28 1997-08-27 日本電気株式会社 水素還元装置およびその方法および水素還元材料
EP1911723A2 (de) * 1996-01-29 2008-04-16 FUJIKIN Inc. Verfahren zur Erzeugung von Feuchtigkeit, Reaktor zur Erzeugung von Feuchtigkeit, Verfahren zur Temperatursteuerung des Reaktors zur Erzeugung von Feuchtigkeit sowie Verfahren zur Erzeugung einer platinbeschichteten Katalysatorschicht
JP3644810B2 (ja) * 1997-12-10 2005-05-11 株式会社フジキン 少流量の水分供給方法
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US20030232501A1 (en) 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
KR100452159B1 (ko) * 2002-08-26 2004-10-12 (주) 윈테크 반도체 장치의 촉매를 이용한 세정방법 및 이를 수행하기위한시스템
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
DE102012219755A1 (de) * 2012-10-29 2014-04-30 Thyssenkrupp Marine Systems Gmbh Verfahren zum Erzeugen von Wasserdampf
CN109441665A (zh) * 2018-12-26 2019-03-08 同济大学 高压气态氢氧喷气式发动机装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1182062A (en) * 1968-03-19 1970-02-25 Carves Simon Ltd Improvements in or relating to the Production of Controlled Quantities of Steam
USRE30145E (en) * 1975-01-27 1979-11-13 Unique Energy Systems, Inc. Energy generating system
US4268538A (en) * 1977-03-09 1981-05-19 Atomel Corporation High-pressure, high-temperature gaseous chemical method for silicon oxidation
DE2831287C2 (de) * 1978-07-17 1982-06-16 Josef 6072 Dreieich Hammer Verfahren zur Erzeugung einer definierten Wasserdampfmenge geringer Konzentration und Vorrichtung zur Durchführung des Verfahrens
JPS5718328A (en) * 1980-07-09 1982-01-30 Kinmon Seisakusho:Kk H2o gas generating apparatus for oxidation of semiconductor wafer
JPS5740937A (en) * 1980-08-22 1982-03-06 Nec Home Electronics Ltd Manufacture of semiconductor device
US4377067A (en) * 1980-11-24 1983-03-22 Deutsche Forschungs- Und Versuchsanstalt Fur Luft- Und Raumfahrt Steam generator
US4388892A (en) * 1981-01-26 1983-06-21 Rody Marc P N Process and apparatus for generation of steam via catalytic combustion
DE3121125C2 (de) * 1981-05-27 1986-04-10 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren zum Abtrennen von Wasserstoff und/oder Deuterium und Tritium aus einem Inertgasstrom sowie Vorrichtung zur Durchführung des Verfahrens im Kühlgaskreislauf eines gasgekühlten Kernreaktors
JPS5953697A (ja) * 1982-09-21 1984-03-28 Isuzu Motors Ltd カチオン型粉体電着塗装方法
DE3332348A1 (de) * 1983-09-08 1985-04-04 Kernforschungsanlage Jülich GmbH, 5170 Jülich Wasserstoff-permeationswand

Also Published As

Publication number Publication date
EP0209065A3 (en) 1988-01-13
US4693208A (en) 1987-09-15
EP0209065B1 (de) 1990-11-07
JPS62104038A (ja) 1987-05-14
EP0209065A2 (de) 1987-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee