DE2315709A1 - RADIATION-EMISSING SEMI-CONDUCTOR ARRANGEMENT WITH HIGH RADIATION POWER - Google Patents

RADIATION-EMISSING SEMI-CONDUCTOR ARRANGEMENT WITH HIGH RADIATION POWER

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Publication number
DE2315709A1
DE2315709A1 DE19732315709 DE2315709A DE2315709A1 DE 2315709 A1 DE2315709 A1 DE 2315709A1 DE 19732315709 DE19732315709 DE 19732315709 DE 2315709 A DE2315709 A DE 2315709A DE 2315709 A1 DE2315709 A1 DE 2315709A1
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DE
Germany
Prior art keywords
radiation
diodes
arrangement
arrangement according
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19732315709
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German (de)
Inventor
Werner Schoeberl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
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Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19732315709 priority Critical patent/DE2315709A1/en
Publication of DE2315709A1 publication Critical patent/DE2315709A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Description

~Strahlung abgebende Halbleiteranordnung rni t hoher Strahlungsleistung" Die Erfindung betrifft eine Strahlung abgebende Halbleiteranordnung mit hoher Strahlungsleistung, aus einem zumindest an der der IIalbleiteranordnun# zugewandten Oberflächenseite isolierenden Gehäusesockel mit einer strahlungsdurchlässigen, die Halbleiteranordnung bedeckenden Kunststofflinse. ~ Radiation-emitting semiconductor arrangement with high radiation power " The invention relates to a radiation-emitting semiconductor arrangement with high radiation power, from one at least on the surface side facing the semiconductor arrangement insulating housing base with a radiation-permeable, the semiconductor arrangement covering plastic lens.

Bei den bisher bekannten Strahlung abgebenden lialbleiteranordnungen wird beispielsweise eine GaAs-Diode auf einem Gehäusesockel befestigt. Nach der Verbindung der Anschlußelektroden des Halbleiterkörpers mit den Gehäusezuführungen wird das Halbleiterbaueleinent mit einem linsenförmigen Abschluß versehen. Bei diesen Anordnungen ist die Strahlungsleistung bei Gleichstrombetrieb in der Segel auf 10 m beschränkt. Zwar kann durch die Wahl von Bauelementen mit größerer Sperrschichtfläche die Strahlungsleistung vergrößert werden, doch machen sich bei grpßfläcigen Bauelementen zunehmend Instabilitäten bemerkbar. Außerdem wächst die Strahlungsleistung in diesen Fällen nicht proportional mit dem zugaihrtell Strom an.In the previously known radiation-emitting semiconductor arrangements For example, a GaAs diode is attached to a housing base. After Connection of the connection electrodes of the semiconductor body to the housing leads the semiconductor component is provided with a lens-shaped termination. With these Arrangements is the radiant power with direct current operation in the sail on 10 m limited. It is true that by choosing components with a larger barrier layer area the radiation power can be increased, but do with large areas Components increasingly noticeable instabilities. In addition, the radiation power increases in these cases it is not proportional to the current supplied.

Der Erfindung liegt daher die Aufgabe zugrunde, eine Halbleiteranordnung anzugeben, die eine sehr hohe Strahlungsleistung aufweist und bei der thermische Instabilitäten vermieden werden. Diese Aufgabe wird bei einer Anordnung der eingangs beschriebenen Art erfindungsgemäß dadurch gelöst, daß auf dem Gehöusesockel eine größere Anzahl. von Strahlung abgebenden Halbleiterbauelementen angeordnet und diese Bauelemente entweder sämtlich hintereinander geschaltet oder parallel zueinander geschaltet sind, und daß die lIalbleiterbauelemente so auf der Sockeloberfläche angeordnet sind, daß keine oder nur geringfügige Strahlungsverluste auftreten.The invention is therefore based on the object of a semiconductor arrangement indicate that has a very high radiation power and the thermal Instabilities are avoided. This task is performed with an arrangement of the initially described type according to the invention solved in that on the housing base a larger number. arranged by radiation-emitting semiconductor components and these Components either all connected in series or parallel to one another are connected, and that the semiconductor components so on the base surface are arranged so that no or only slight radiation losses occur.

Da bei der Parallelschaltung von Lumineszenzdioden Stabilisierungswiderstände erforderlich sind, die zusätzliche Leistung aufnehmen, wird die Serienschaltung der Lumineszenzdioden bevorzugt. Thermische Instabilitäten werden bei der Serien- oder Reihenschaltung vermieden, da durch jede Diode zwangsläufig der gleiche Strom fließt. Bei einer gleichsinnigen Reihenschaltung von beispielsweise neun GaAs-Dioden erhält man eine Infrarot-Strahlungsleistung von ca. 500 IIW. An der Gesamtanordnung liegt dabei eine Spannung von 15 bis 20 V, und es fließt ein Strom von ca. 0,5 bis 1 A. Die Strahlung leistung kann mit geeichten Solarzellen gemessen werden.As stabilization resistors when connecting luminescence diodes in parallel are required that consume additional power, the series connection of the light emitting diodes preferred. Thermal instabilities are used in series or series connection is avoided, since the same current inevitably flows through each diode flows. With a series connection of nine GaAs diodes, for example, in the same direction receives one has an infrared radiation power of approx. 500 IIW. At the overall arrangement has a voltage of 15 to 20 V, and it flows in Current of approx. 0.5 to 1 A. The radiation output can be adjusted with calibrated solar cells be measured.

Dabei wird jedoch die Gehäusetemperatur mit beispielsweise 250C konstant gehalten.However, the case temperature is constant at 250C, for example held.

Die GaAs-Dioden, die für die erfindungsgemäße Anordnung in vorteilhafter Weise benutzt werden können, geben eine unsichtbare Infrarotstrahlung mit einer Wellenlänge von 940 on ab. Um den Verlust von Strahlungsleistung zu vermeiden, müssen die Dioden möglichst im zentralen Bereich auf der Oberfläche des Gehäusesockels zusammengefasst werden. Der Gehäusesockel weist meistens eine kreisförmige Oberfläche auf, so daß in diesem Fall die Leuchtdioden möglichst um den Mittelpunkt dieser Kreisfläche herum gruppiert werden. Hierzu werden auf die Oberfläche des Gehäusesockels mehrere voneinander getrennte, metallisierte Flächenbereiche aufgebracht. Jeder Flächenbereich dient dann als Anschluß an eine Diode. Der andere Anschluß jeder Diode wird dann mit dem in der Reihenschaltung folgenden Flächenbereich elektrisch leitend verbunden.The GaAs diodes, which are advantageous for the arrangement according to the invention Can be used to give an invisible infrared radiation with a way Wavelength from 940 on. In order to avoid the loss of radiant power, must the diodes, if possible, in the central area on the surface of the housing base be summarized. The housing base usually has a circular surface on, so that in this case the light-emitting diodes as possible around the center of this Can be grouped around a circular area. This is done on the surface of the housing base applied several separate, metallized surface areas. Everyone The surface area then serves as a connection to a diode. The other connection everyone The diode then becomes electrical with the surface area following in the series circuit conductively connected.

Die Erfindung und ihre weitere Vorteilhafte Ausgestaltung wird noch im weiteren anhand eines Ausfüiirungsbeispieles näher erläutert.The invention and its further advantageous embodiment is still explained in more detail below with the aid of an exemplary embodiment.

Nach der Figur 1 besteht der Gehäusesockel beispielsweise aus einer Kupferschraube 1 mit einer aufgesetzten Isolierstoffscheibe 2. Diese Isolierstoffscheibe besteht beispiels weise aus BeO. Die Kupferschraube dient als Wärmesenkeafür die Halbleiteranordnung. Die Metallisierungen (6a,7 Fig. 2) auf der Oberfläche der Isolierstoffscheibe 2 sind mit den in das Gehäuseinnere führenden Anschlußelektroden 4 und 5 verbunden. Der Sockel wird nach dem Einbau der Halbleiterbauelemente mit einer Linse 3 abgeschlossen, die aus durchsichtigem Kunststoff1 beispielsweise Makrolon, besteht. Je nach der Form der Linse erhält man unterschiedliche Offnungswinkel. Die bevorzugten Ausführungsformen weisen Öffnungswinkel von 80 bzw. 1400 auf.According to FIG. 1, the housing base consists, for example, of a Copper screw 1 with an insulating washer 2. This insulating washer consists, for example, of BeO. The copper screw serves as a heat sink for the Semiconductor device. The metallizations (6a, 7, Fig. 2) on the surface of the insulating disk 2 are connected to the connecting electrodes 4 and 5 leading into the interior of the housing. After the semiconductor components have been installed, the base is closed with a lens 3, made of transparent plastic1, for example Makrolon. Depending on the Different aperture angles are obtained in the shape of the lens. The preferred embodiments have opening angles of 80 and 1400 respectively.

In der Figur 2 ist in einer Draufsicht die Oberfläche sler Isolierstoffscheibe 2 dargestellt. Die Metallflächen 6 sind um den Mittelpunkt der Scheibe gruppiert und bilden mit ihrer Anordnung drei Reihen und drei Spalten. Die erste Anschlußfläche 6a ist vergrößert und dient zum Anschluß der Gehäuse-Anschlußelektrode 4. An dem der Anschlußfläche 6a gegenüberliegenden Rand der Isolierstoffscheibe ist außerdem eine zehnte Metallfläche 7 vorhanden, die zum Anschluß an die z#<-eite Gehäus e-Ans chlunel ektrode 5 dient. Auf jede der nelul Metallflächen 5 ist eine GaAs-Diode 8 mit ihrer einen Elektrode unter Bildung eines ohmschen Kontaktes befestigt. Die andere Elektrode jeder Diode ist über einen dünnen Zuleitungsdraht 9 mit der nachfolgenden etallflache elektrisch leitend verbunden. Auf diese Weise werden alle Dioden gleichsinnig zueinander in Reihe geschaltet. Die letzte Diodenelektrode in der Reihenschaltung wird mit der Metallfläche 7 verbunden.In FIG. 2, the surface of the insulating material disk is shown in a plan view 2 shown. The metal surfaces 6 are grouped around the center of the disk and with their arrangement they form three rows and three columns. The first pad 6a is enlarged and is used for connection the housing connection electrode 4. At the edge of the insulating disk opposite the connection surface 6a there is also a tenth metal surface 7, which connects to the z # <- side Housing e-connector electrode 5 is used. On each of the nelul metal surfaces 5 is one GaAs diode 8 attached with its one electrode to form an ohmic contact. The other electrode of each diode is via a thin lead wire 9 with the subsequent metal surface electrically connected. This way everyone will Diodes connected in series in the same direction. The last diode electrode in the series circuit is connected to the metal surface 7.

Die erfindungsgemäße Anordnung wird vorzugsweise mit Gleichstrom betrieben. Es hat sich aber gezeigt, daß auch ein Impulsbetrieb möglich ist. Im Impulsbetrieb konnte die Anord nung mit einem Strom bis zu 6A belastet werden, und es ergab sich eine maximale Strahlungsleistung von 1,5W. Die Metallflächen 6 bestehen beispielsweise aus Gold und werden nach einem der bekannten Verfahren auf die Isolierstoffscheibe aufgebracht.The arrangement according to the invention is preferably operated with direct current. However, it has been shown that pulse operation is also possible. In pulse mode the arrangement could be loaded with a current of up to 6A, and it resulted a maximum radiation power of 1.5W. The metal surfaces 6 exist, for example made of gold and are applied to the insulating disk using one of the known methods upset.

Ein besonderer Vorteil der oben beschriebenen Anordnung liegt in der günstig gewählten Betriebsspannung von 15 bis 20 V.A particular advantage of the arrangement described above is in the favorably selected operating voltage of 15 to 20 V.

Einzeldioden haben im Betrieb eine Duchlaßspannung von bis 1,8 V. Um bei einem Einzelelement eine vergleichbare Strahlungsleistung zu erzielen, sind Gleichstjöme von ca. 10 A notwendig.Individual diodes have a forward voltage of up to 1.8 V. In order to achieve a comparable radiation output with a single element, are DC currents of approx. 10 A are necessary.

Wenn anstelle von GaAs ein Halbleiterkörper aus GaP oder GaAsP verwendet wird, erhält man Diodenanordnungen, die Licht im sichtbaren Spektrum aussenden.If a semiconductor body made of GaP or GaAsP is used instead of GaAs diodes are obtained that emit light in the visible spectrum.

Claims (5)

P a t e ii t a n 5 p r ü c h e P a t e ii t a n 5 p r ü c h e 7)i) Strahlung abgebende Halbleiteranordnung mit hoher Strahlungsleistung, aus einem zumindest an der der Halbleiteranordnung zugewandten Oberflächenseite Isolierenden Gehäusesockel und einer strahlungsdurchlässigen, die IIalbleSiteranordnung bedeckenden Kunststofflinse, dadurch gekennzeichnet. daß auf dem Gehäusesockel eine größere Anzahl von Strahlung abgebenden Halbleiterbauelementen angeordnet und diese Bauelemente entweder sämtlich hintereinander geschaltet oder parallel zueinander geschaltet sind, und daß die Halbleiterbauelemente so auf der Sockeloberfläche angeordnet sind, daß keine oder nur geringfügige Strahlungsverluste auftreten.7) i) Radiation-emitting semiconductor arrangement with high radiation power, from one at least on the surface side facing the semiconductor arrangement Insulating housing base and a radiation-permeable, the IIalbleSiterordnung covering plastic lens, characterized. that on the housing base a arranged larger number of radiation-emitting semiconductor components and this Components either all connected in series or parallel to one another are connected, and that the semiconductor components are arranged on the base surface are that no or only slight radiation losses occur. 2) Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß im zentralen Bereich auf der Oberfläche des Gehäusesockels mehrere metallisierte Flächenbereiche voneinander isoliert angeordnet sind, wobei auf jedem Flächentei) eine Lumineszenz-Diode mit ihrer einen Elektrode befestigt ist, und aß alle Dioden in Reihe geschaltet sind. 2) Arrangement according to claim 1, characterized in that in the central Area on the surface of the housing base, several metallized areas are arranged isolated from one another, with a luminescent diode on each surface part with one electrode attached, and ate all the diodes connected in series are. 3) Anordnung nach Anspruch 2, dadurch gekennzeichnet, daß die Reihenschaltung an ihren Endpunkten an die Gehäusezuleitungen angeschlossen ist.3) Arrangement according to claim 2, characterized in that the series connection is connected at its end points to the housing supply lines. 4) Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß im-zentr.llen Bereich der Sockeloberfläche 9 metallisierte, drei Reihen und drei Spalten bildende Flächen angeordnet sind, die je eine Diode tragen.4) Arrangement according to one of the preceding claims, characterized in that that in the central area of the base surface 9 metallized, three rows and three columns forming surfaces are arranged, each carrying a diode. 5) Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß die Dioden GaAs-Dioden sind, die Infrarot-Licht abgeben.5) Arrangement according to one of the preceding claims, characterized in that that the diodes are GaAs diodes that emit infrared light.
DE19732315709 1973-03-29 1973-03-29 RADIATION-EMISSING SEMI-CONDUCTOR ARRANGEMENT WITH HIGH RADIATION POWER Ceased DE2315709A1 (en)

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Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426381A1 (en) * 1978-05-18 1979-12-14 Bourboulon Henri Electroluminescent diode hybrid circuit module - uses series connection of diodes and optical lens system(s)
EP0078037A2 (en) * 1981-10-23 1983-05-04 Izumi Denki Corporation Light emission diode lamp and method for producing thereof
EP0107480A2 (en) * 1982-10-21 1984-05-02 Idec Izumi Corporation Light emission diode lamp and method of producing it
EP0108368A1 (en) * 1982-11-03 1984-05-16 Honeywell-Elac-Nautik GmbH Optical warning or indicating device with light emitting diodes
EP0315905A2 (en) * 1987-11-07 1989-05-17 Werner Müller Electroluminescent device
DE19608391A1 (en) * 1996-03-05 1997-09-11 Telefunken Microelectron Reflex sensor for e.g. detection or position identification of object
EP1160881A1 (en) * 2000-05-27 2001-12-05 Mu-Chin Yu Light emitting diode encapsulation
WO2002005357A1 (en) * 2000-07-10 2002-01-17 Osram Opto Semiconductors Gmbh Led module, method for producing the same and the use thereof
WO2002005351A1 (en) * 2000-07-12 2002-01-17 Tridonic Optoelectronics Gmbh Led light source
EP1211735A1 (en) * 2000-12-04 2002-06-05 Mu-Chin Yu Light emitting diode with improved heat dissipation
WO2002084749A2 (en) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same
EP1276157A2 (en) * 2001-06-27 2003-01-15 Toyoda Gosei Co., Ltd. Shielded reflective light-emitting device
WO2003028119A2 (en) * 2001-09-25 2003-04-03 Kelvin Shih Light emitting diode with integrated heat dissipater
US6777891B2 (en) 1997-08-26 2004-08-17 Color Kinetics, Incorporated Methods and apparatus for controlling devices in a networked lighting system
US6806659B1 (en) 1997-08-26 2004-10-19 Color Kinetics, Incorporated Multicolored LED lighting method and apparatus
US6841931B2 (en) 2001-04-12 2005-01-11 Toyoda Gosei Co., Ltd. LED lamp
US6995405B2 (en) 2001-04-23 2006-02-07 Plasma Ireland Limited Illuminator
WO2006083065A1 (en) 2005-02-04 2006-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
WO2006089512A1 (en) 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Module comprising radiation-emitting semiconductor bodies
AT414200B (en) * 2001-07-05 2006-10-15 Tridonic Optoelectronics Gmbh WHITE LED LIGHT SOURCE
WO2007126720A2 (en) 2006-04-27 2007-11-08 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same
WO2009141960A1 (en) * 2008-05-20 2009-11-26 Panasonic Corporation Semiconductor light-emitting device as well as light source device and lighting system including the same
US7959320B2 (en) 1999-11-18 2011-06-14 Philips Solid-State Lighting Solutions, Inc. Methods and apparatus for generating and modulating white light illumination conditions
EP2432038A1 (en) * 2010-09-17 2012-03-21 Liang Meng Plastic Share Co. Ltd. Light emitting diode package structure
US8207821B2 (en) 2003-05-05 2012-06-26 Philips Solid-State Lighting Solutions, Inc. Lighting methods and systems
EP2056014A3 (en) * 2007-10-31 2014-04-02 Cree, Inc. LED array and method for fabricating same
US9066777B2 (en) 2009-04-02 2015-06-30 Kerr Corporation Curing light device
US9076940B2 (en) 2005-01-10 2015-07-07 Cree, Inc. Solid state lighting component
US9072572B2 (en) 2009-04-02 2015-07-07 Kerr Corporation Dental light device
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US9572643B2 (en) 1998-01-20 2017-02-21 Kerr Corporation Apparatus and method for curing materials with radiation
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same

Cited By (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426381A1 (en) * 1978-05-18 1979-12-14 Bourboulon Henri Electroluminescent diode hybrid circuit module - uses series connection of diodes and optical lens system(s)
EP0078037A2 (en) * 1981-10-23 1983-05-04 Izumi Denki Corporation Light emission diode lamp and method for producing thereof
EP0078037A3 (en) * 1981-10-23 1985-07-03 Izumi Denki Corporation Light emission diode lamp and method for producing thereof
EP0107480A2 (en) * 1982-10-21 1984-05-02 Idec Izumi Corporation Light emission diode lamp and method of producing it
EP0107480A3 (en) * 1982-10-21 1986-07-16 Idec Izumi Corporation Light emission diode lamp and method of producing it
EP0108368A1 (en) * 1982-11-03 1984-05-16 Honeywell-Elac-Nautik GmbH Optical warning or indicating device with light emitting diodes
EP0315905A2 (en) * 1987-11-07 1989-05-17 Werner Müller Electroluminescent device
EP0315905A3 (en) * 1987-11-07 1990-05-02 Werner Müller Electroluminescent device
DE19608391A1 (en) * 1996-03-05 1997-09-11 Telefunken Microelectron Reflex sensor for e.g. detection or position identification of object
US6777891B2 (en) 1997-08-26 2004-08-17 Color Kinetics, Incorporated Methods and apparatus for controlling devices in a networked lighting system
US6806659B1 (en) 1997-08-26 2004-10-19 Color Kinetics, Incorporated Multicolored LED lighting method and apparatus
US9572643B2 (en) 1998-01-20 2017-02-21 Kerr Corporation Apparatus and method for curing materials with radiation
US9622839B2 (en) 1998-01-20 2017-04-18 Kerr Corporation Apparatus and method for curing materials with radiation
US7959320B2 (en) 1999-11-18 2011-06-14 Philips Solid-State Lighting Solutions, Inc. Methods and apparatus for generating and modulating white light illumination conditions
EP1160881A1 (en) * 2000-05-27 2001-12-05 Mu-Chin Yu Light emitting diode encapsulation
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