DE102004040943A1 - Selective deposition of high-k dielectric on a semiconductor surface, using atomic layer deposition, deposits the material on a specific surface zone in a number of cycles - Google Patents
Selective deposition of high-k dielectric on a semiconductor surface, using atomic layer deposition, deposits the material on a specific surface zone in a number of cycles Download PDFInfo
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- DE102004040943A1 DE102004040943A1 DE102004040943A DE102004040943A DE102004040943A1 DE 102004040943 A1 DE102004040943 A1 DE 102004040943A1 DE 102004040943 A DE102004040943 A DE 102004040943A DE 102004040943 A DE102004040943 A DE 102004040943A DE 102004040943 A1 DE102004040943 A1 DE 102004040943A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
Abstract
Description
Die vorliegende Erfindung betrifft ein Verfahren zur selektiven Abscheidung einer Schicht mittels des Atomic Layer Deposition (ALD) Verfahrens.The The present invention relates to a method for selective deposition a layer using the Atomic Layer Deposition (ALD) method.
Für die Integration von neuen Materialien, z. B. den sogenannten High-k-Dielektrika, ist es von Vorteil, wenn man diese Schichten selektiv abscheiden kann. Dies ist bisher nicht möglich.For the integration of new materials, eg. As the so-called high-k dielectrics, it is advantageous to selectively deposit these layers can. This is not possible so far.
High-k-Dielektrika werden zur Zeit bevorzugt mittels PVD-, CVD- und ALD-Verfahren abgeschieden. Bei diesen Verfahren ergeben sich zwar leicht unterschiedliche Abscheideraten und Inkubationszeiten auf unterschiedlichen Oberflächen, eine selektive Abscheidung nur auf ein bestimmtes Substrat ist aber mit den bekannten Verfahren nicht möglich.High-k dielectrics are currently preferably deposited by means of PVD, CVD and ALD methods. Although slightly different deposition rates result in these processes and incubation times on different surfaces, one However, selective deposition only on a specific substrate is involved the known method not possible.
Es ist Aufgabe der vorliegenden Erfindung, ein Verfahren zur selektiven Abscheidung einer Schicht mittels des ALD-Verfahrens auf nur bestimmte Substratbereiche zu schaffen.It Object of the present invention, a method for selective Deposition of a layer by the ALD method on only certain substrate areas to accomplish.
Erfindungsgemäß wird diese Aufgabe durch das in Anspruch 1 angegebene Verfahren zur selektiven Abscheidung einer Schicht mittels des ALD-Verfahrens gelöst.According to the invention this Object by the method specified in claim 1 for selective Deposition of a layer solved by the ALD method.
Die der vorliegenden Erfindung zugrundeliegende Idee besteht darin, unterschiedliche Inkubationszeiten bei der ALD-Abscheidung auf unterschiedlichen Substratoberflächen auszunutzen und das ALD-Verfahren derart zu modifizieren, dass eine selektive Abscheidung einer Schicht möglich ist.The The idea underlying the present invention is that exploit different incubation times during ALD deposition on different substrate surfaces and to modify the ALD method such that a selective Deposition of a layer possible is.
In der vorliegenden Erfindung wird das eingangs erwähnte Problem dadurch gelöst, dass auf unterschiedlichen Substraten das Wachstum während einer ALD-Abscheidung unterschiedlich stark voranschreitet. Der Bereich, auf dem eine Abscheidung erwünscht ist, soll dabei ein stärkeres Wachstum aufweisen, als der Bereich, auf dem keine Abscheidung erwünscht ist. Hierfür werden unterschiedliche Inkubationszeiten ausgenutzt. Sobald das Wachstum auf beiden Bereichen einen annähernd gleichen Wert erreicht hat, wird der Bereich, auf dem keine Abscheidung erwünscht ist, in seinen Ausgangszustand vor Beginn der Abscheidung versetzt. Somit wird sichergestellt, dass nach wie vor unterschiedliche Abscheideraten zwischen unterschiedlichen Bereichen vorliegen.In According to the present invention, the problem mentioned in the introduction is solved by growth on different substrates during ALD deposition varies greatly. The area on which a Deposition desired is supposed to be a stronger one Growth than the area where no deposition is desired. Therefor Different incubation times are used. Once the growth in both areas an approximately same Value has reached, the area where no deposition is desired, offset to its initial state before the deposition. Consequently ensures that there are still different retention rates between different areas.
In den Unteransprüchen finden sich vorteilhafte Weiterbildungen und Verbesserungen des jeweiligen Erfindungsgegenstandes.In the dependent claims find advantageous developments and improvements of respective subject of the invention.
Gemäß einer bevorzugten Weiterbildung wird die abgeschiedene Schicht auf dem ersten Oberflächenbereich nach der Auftragung durch ein entsprechendes Verfahren, insbesondere einem Anneal-Prozess, gehärtet. Dadurch wird eine Konditionierung des zweiten Oberflächenbereiches, auf dem keine Abscheidung erwünscht ist, entsprechend dem Ausgangszustand vor Beginn der Abscheidung erleichtert.According to one preferred development is the deposited layer on the first surface area after application by a corresponding method, in particular an annealing process, hardened. This will cause a conditioning of the second surface area, on the no deposition desired is, according to the initial state before the beginning of the deposition facilitated.
Gemäß einer weiteren bevorzugten Weiterbildung wird der zweite Oberflächenbereich entsprechend seinem Ausgangszustand vor Beginn der Abscheidung konditioniert. Dadurch wird sichergestellt, dass bei einer weiteren Abscheidung zur Erhöhung der Schichtdicke auf dem ersten Oberflächenbereich weiterhin unterschiedliche Abscheideraten zwischen dem ersten und dem zweiten Oberflächenbereich vorliegen.According to one Another preferred embodiment is the second surface area conditioned according to its initial state before the beginning of the deposition. This will ensure that in another deposition to increase the Layer thickness on the first surface area continues to be different Abscheideraten between the first and the second surface area are present.
Gemäß einer weiteren bevorzugten Weiterbildung werden die oben genannten Schritte in einem Zyklus gefahren: Nach einer anfänglichen Konditionierung einer Oberfläche mit zwei unterschiedlichen Oberflächenbereichen wird mittels eines ALD-Verfahrens selektiv auf dem ersten Oberflächenbereich eine Schicht abgeschieden. Diese Schicht kann durch ein entsprechendes Verfahren, insbesondere einem Anneal-Prozess, gehärtet werden. Anschließend kann eine Konditionierung des zweiten Oberflächenbereiches entsprechend dem Ausgangszustand durchgeführt werden. Diese Schritte können ein- bis mehrmals wiederholt werden, um eine gewünschte Schichtdicke über dem ersten Oberflächenbereich zu erreichen.According to one Another preferred development will be the above steps in one cycle: after an initial conditioning of a surface with two different surface areas is by means of an ALD method selectively on the first surface area a Layer deposited. This layer can be replaced by a corresponding Process, in particular an annealing process to be cured. Subsequently can be a conditioning of the second surface area accordingly performed the initial state become. These steps can be repeated one or more times to a desired layer thickness above the first surface area to reach.
Gemäß einer weiteren bevorzugten Weiterbildung beträgt die Anzahl der ALD-Zyklen 4 bis 20 vorzugsweise 10 während einer Abscheidung. Durch die Wahl der ALD-Zyklen kann der Abscheidevorgang rechtzeitig vor Ausbildung einer durchgängigen Schicht auf dem zweiten Oberflächenbereich gestoppt werden.According to one Another preferred development is the number of ALD cycles 4 to 20, preferably 10 during a deposition. By choosing the ALD cycles, the deposition process can be done in time before training a continuous shift on the second surface area being stopped.
Gemäß einer weiteren bevorzugten Weiterbildung besteht das Halbleitersubstrat, auf dem die Abscheidung stattfindet, aus Silizium.According to one Another preferred development is the semiconductor substrate, on which the deposition takes place, made of silicon.
Gemäß einer weiteren bevorzugten Weiterbildung wird der erste Oberflächenbereich SiO2-terminiert und der zweite Oberflächenbereich Wasserstoff-terminiert. Die unterschiedlichen Abscheideraten bzw. Inkubationszeiten ermöglichen hier besonders gut eine selektive Abscheidung.According to a further preferred development, the first surface area SiO 2 -terminated and the second surface area is hydrogen-terminated. The different deposition rates or incubation times allow a particularly good selective separation.
Gemäß einer weiteren bevorzugten Weiterbildung wird die Wasserstoff-terminierte Oberfläche des zweiten Oberflächenbereichs durch einen HF-Dampfpuls wiederhergestellt.According to one Another preferred embodiment is the hydrogen-terminated Surface of the second surface area restored by an RF vapor pulse.
Gemäß einer weiteren bevorzugten Weiterbildung besteht die Schicht, die während des ALD-Verfahrens aufgetragen wird, aus Metalloxid, vorzugsweise aus Hafniumdioxid (HfO2).According to a further preferred development, the layer which is applied during the ALD process consists of metal oxide, preferably of hafnium dioxide (HfO 2 ).
Ein Ausführungsbeispiel der Erfindung ist in den Zeichnungen dargestellt und in der nachfolgenden Beschreibung näher erläutert.One embodiment The invention is illustrated in the drawings and in the following Description closer explained.
Es zeigen:It demonstrate:
In den Figuren bezeichnen gleiche Bezugszeichen gleiche oder funktionsgleiche Bestandteile.In the same reference numerals designate the same or functionally identical Ingredients.
In
Fig. bezeichnet Bezugszeichen
Der
zweite Oberflächenbereich
Anschließend an
den Zustand gemäß
In
der
Die Graphen 3 bis 5 zeigen das Wachstum auf Oberflächen die mit unterschiedlichen Rapid Thermal Oxidation (RTO) Prozessen in sauerstoffhaltiger Atmosphäre behandelt wurden, nämlich Graph 3 für RTO-SiO2, Graph 4 für RTO-SiO-N und Graph 5 für RTO-Si-O-N bei anfänglichen H2O-Pulsen.Graphs 3 through 5 show growth on surfaces treated with different Rapid Thermal Oxidation (RTO) processes in an oxygen-containing atmosphere, namely, Graph 3 for RTO-SiO 2 , Graph 4 for RTO-SiO-N, and Graph 5 for RTO-Si -ON at initial H 2 O pulses.
Besonders
deutlich ist der Unterschied im Schichtwachstum zwischen Graph 1
und Graph 2 zu erkennen. Durch diesen starken Unterschied ist es möglich, selektiv
auf dem ersten Oberflächenbereich
In
Weiter
mit Bezug auf
In
einem darauffolgenden Prozessschritt, der in
Anschließend erfolgt
gemäß
Im
nächsten
Prozessschritt, der in
Am
Ende des thermischen Oxidationsprozesses erhält man eine Oberfläche OF des
Halbleitersubstrats
Eine
derartige Konstellation benötigt
man beispielsweise bei der Herstellung von Gate-Anordnungen mit
unterschiedlich dickem Gate-Oxid. Dementsprechend ist im Prozesszustand
gemäß
Obwohl die vorliegende Erfindung vorstehend anhand bevorzugter Ausführungsbeispiele beschrieben wurde, ist sie darauf nicht beschränkt, sondern auf vielfältige Art und Weise modifizierbar.Even though the present invention above based on preferred embodiments It is not limited to this, but in many ways and modifiable.
Auch ist die Erfindung nicht auf die genannten Anwendungsmöglichkeiten beschränkt.Also the invention is not limited to the aforementioned applications limited.
Das Halbleitersubstrat ist nicht auf Silizium beschränkt, sondern kann auch Germanium o.ä. sein.The Semiconductor substrate is not limited to silicon, but can also germanium etc. be.
- 11
- HalbleitersubstratSemiconductor substrate
- 22
- erster Oberflächenbereichfirst surface area
- 33
- zweiter Oberflächenbereichsecond surface area
- 44
- Schichtlayer
- 55
- Inseln aus BeschichtungsmaterialIslands from coating material
- 66
- SiO2-SchichtSiO 2 layer
- 77
- PhotolackmaskePhotoresist mask
- 99
- GateanschlussbereicheGate areas
- 1010
- STI-GräbenSTI trenches
- OFOF
- Oberflächesurface
Claims (11)
Priority Applications (1)
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DE102004040943A DE102004040943B4 (en) | 2004-08-24 | 2004-08-24 | Method for the selective deposition of a layer by means of an ALD method |
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DE102004040943A DE102004040943B4 (en) | 2004-08-24 | 2004-08-24 | Method for the selective deposition of a layer by means of an ALD method |
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DE102004040943A1 true DE102004040943A1 (en) | 2006-03-02 |
DE102004040943B4 DE102004040943B4 (en) | 2008-07-31 |
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Cited By (4)
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DE102007002962B3 (en) * | 2007-01-19 | 2008-07-31 | Qimonda Ag | Method for producing a dielectric layer and for producing a capacitor |
EP2222889A1 (en) * | 2007-11-06 | 2010-09-01 | HCF Partners, L.P. | Atomic layer deposition process |
DE102008000373B4 (en) * | 2007-04-16 | 2016-06-09 | Imec Vzw. | Method for forming a dielectric layer |
CN110718647A (en) * | 2019-09-25 | 2020-01-21 | 武汉华星光电半导体显示技术有限公司 | Preparation method of thin film and preparation method of display device |
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US20040032001A1 (en) * | 2002-08-15 | 2004-02-19 | Gilmer David C. | Method for forming a dual gate oxide device using a metal oxide and resulting device |
US20040038538A1 (en) * | 2002-08-23 | 2004-02-26 | Tuo-Hung Ho | Dual-gate structure and method of fabricating integrated circuits having dual-gate structures |
US6764546B2 (en) * | 1999-09-08 | 2004-07-20 | Asm International N.V. | Apparatus and method for growth of a thin film |
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2004
- 2004-08-24 DE DE102004040943A patent/DE102004040943B4/en not_active Expired - Fee Related
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US6576543B2 (en) * | 2001-08-20 | 2003-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for selectively depositing diffusion barriers |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102007002962B3 (en) * | 2007-01-19 | 2008-07-31 | Qimonda Ag | Method for producing a dielectric layer and for producing a capacitor |
DE102008000373B4 (en) * | 2007-04-16 | 2016-06-09 | Imec Vzw. | Method for forming a dielectric layer |
EP2222889A1 (en) * | 2007-11-06 | 2010-09-01 | HCF Partners, L.P. | Atomic layer deposition process |
EP2222889A4 (en) * | 2007-11-06 | 2010-12-29 | Hcf Partners L P | Atomic layer deposition process |
CN110718647A (en) * | 2019-09-25 | 2020-01-21 | 武汉华星光电半导体显示技术有限公司 | Preparation method of thin film and preparation method of display device |
US11342502B2 (en) | 2019-09-25 | 2022-05-24 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of preparing film and method of manufacturing display device |
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