CN1983590A - High luminance light emitting diode and liquid crystal display using the same - Google Patents

High luminance light emitting diode and liquid crystal display using the same Download PDF

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Publication number
CN1983590A
CN1983590A CNA2006100647996A CN200610064799A CN1983590A CN 1983590 A CN1983590 A CN 1983590A CN A2006100647996 A CNA2006100647996 A CN A2006100647996A CN 200610064799 A CN200610064799 A CN 200610064799A CN 1983590 A CN1983590 A CN 1983590A
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China
Prior art keywords
light
emitting diode
substrate
liquid crystal
heat sink
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Granted
Application number
CNA2006100647996A
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Chinese (zh)
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CN1983590B (en
Inventor
卢水贵
金奎锡
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
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Abstract

The invention discloses a light emitting diode (LED) with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips.

Description

High brightness LED and the liquid crystal indicator that uses it
The cross reference of related application
The application advocates the priority and the interests of the korean patent application of filing an application to Korea S Department of Intellectual Property on November 10th, 2005 10-2005-0107391 number, and it is for reference that the whole content of this application is incorporated this paper at this.
Technical field
The present invention relates to a kind of light-emitting diode (LED), relate more specifically to a kind of high-brightness LED that can be used as the backlight of liquid crystal indicator.
Background technology
The type that can be used as the display unit of computer monitor or TV comprises selfluminous device, for example light-emitting diode (LED) display, electroluminescence (EL) display, vacuum fluorescent display (VFD), field-emitter display (FED) or Plasmia indicating panel (PDP).Type of device also comprises the non-selfluminous device that needs additional light source, for example LCD (LCD).
Typical liquid crystal indicator comprises two display floaters of a formation generating electrodes (field generatingelectrode) on it and has dielectric anisotropy and place two liquid crystal layers between the display floater.Liquid crystal indicator applies voltage to generate electric field in liquid crystal layer to the field generating electrodes.Change the voltage that is applied for the intensity of the electric field in the regulator solution crystal layer, pass through the transmissivity of liquid crystal layer so that show required image thereby regulate light.
Light can be provided or can be natural daylight by artificial light sources.
The artificial light sources (for example back lighting device) that is used for LCD typically uses a plurality of fluorescent lamps, and for example cold-cathode fluorescence lamp (CCFL) or external electrode fluorescent lamp (EEFL) perhaps can use a plurality of LED as light source.
In display unit, LED receives publicity as the light source of back lighting device of future generation, and this is because LED has a large amount of useful characteristics.For example, because LED does not use mercury, so the LED environmental sound.In addition, LED has the long-life, and this is because the structural stability of LED.
Yet, use luminescence chip and fluorescent apparatus in order to utilize LED to generate white light.The light that fluorescent apparatus sends luminescence chip is converted to the light with different Wavelength distribution.Because will be converted to the light of various wavelength from the light that a luminescence chip sends and be used as light source, so the problem that LED exists is that its total brightness is low.
The disclosed above-mentioned information of background parts only is in order to strengthen the understanding to background of invention, and therefore described information can comprise the information that is not formed in this national known prior art of those of ordinary skills.
Summary of the invention
Therefore, system and the technology of here describing provides a kind of high-brightness LED.
According to present disclosure, on the upper surface that provide each to include bottom substrate, to be arranged on described bottom substrate with lower surface and upper surface and a plurality of luminescence chips that are electrically connected and being used to of being connected in parallel to each other cover the light-emitting diode of the fluorescent material layer of described luminescence chip.
According to example embodiment of the present invention, each light-emitting diode can also comprise the lead so that described a plurality of luminescence chips are electrically connected with parallel way on the lower surface that is formed on described bottom substrate.
Described bottom substrate can have through hole, and described light-emitting diode can also comprise that the described through hole that is used for via described bottom substrate connects the electrode of described luminescence chip and the connector of described lead.
Described bottom substrate can comprise PCB substrate and the heat sink substrate (heat sink substrate) that is connected on the described PCB substrate, described lead can be formed on the lower surface of described PCB substrate, and described luminescence chip can be placed on the upper surface of described heat sink substrate.
Described heat sink substrate can comprise metal.For example, described heat sink substrate can be made by metal material fully, can mainly be made up of metal material, perhaps can comprise metal material.
Each can also comprise one or more chip basement membranes described light-emitting diode, and described one or more chip basement membranes are formed on the described heat sink substrate so that the electrode of described luminescence chip and described heat sink substrate insulation.
Each can also comprise via membrane described light-emitting diode, and described via membrane is formed on the inwall of through hole of described heat sink substrate at least so that described connector and described heat sink substrate insulation.
Described luminescence chip can blue light-emitting.
Described luminescence chip can blue light-emitting and ultraviolet light.
Described fluorescent material layer can comprise red fluorescence material and green fluorescent material.
Each can also comprise the moulded resin layer that covers described fluorescent material layer described light-emitting diode.
Can on the upper surface of described bottom substrate, form groove, and described luminescence chip to small part can be arranged in the associated channels.
Each can also comprise reflector on the upper surface that is formed on described bottom substrate described light-emitting diode.
In addition, provide a kind of liquid crystal indicator that comprises light-emitting diode and liquid crystal panel, wherein said liquid crystal panel is oriented to receive light from described light-emitting diode, and comprises two panels and place liquid crystal layer between described two panels.Each can comprise described light-emitting diode: the PCB substrate with lower surface and upper surface and through hole; Be formed on the lead on the lower surface of described PCB substrate; Heat sink substrate, described heat sink substrate have lower surface and upper surface and with the through hole of the through-hole alignment of described PCB substrate, the lower surface of wherein said heat sink substrate is positioned on the upper surface of described PCB substrate; Be arranged on a plurality of luminescence chips on the upper surface of described heat sink substrate; Connector, described connector are used for being connected via the through hole of described heat sink substrate and described PCB substrate the electrode and the described lead of described luminescence chip; Cover the fluorescent material layer of described luminescence chip; With the moulded resin layer that is formed on the described fluorescent material layer.
Described liquid crystal indicator can also comprise two polarizers that are arranged on each side of described liquid crystal panel.
Described liquid crystal indicator can also comprise the one or more bloomings that are positioned between described light-emitting diode and the described liquid crystal panel.
Description of drawings
Fig. 1 is the decomposition diagram according to the liquid crystal indicator of example embodiment of the present invention.
Fig. 2 is the layout view of the light-emitting diode (LED) according to example embodiment of the present invention.
Fig. 3 is the cross-sectional view that the line III-III along Fig. 2 is intercepted.
Fig. 4 to Fig. 6 is the vertical cross-section view of explanation according to the different structure of the LED of example embodiment of the present invention.
Fig. 7 is the curve chart that the curve of spectrum that obtains from the blue-light LED chip that uses yellow YAG fluorescent material and another blue-light LED chip that uses red and green fluorescent material is described.
Embodiment
For those of ordinary skills can easily implement the present invention, the example embodiment that present invention will be described in detail with reference to the accompanying hereinafter, aspect of the present invention is defined by the claims.It is illustrative describing below, and is not to be used for limiting claim.It will be recognized by those of ordinary skills, except that the element that is described below, can also use the replacement of following element to implement, perhaps replace the element that is described below, and can omit some elements.
In the accompanying drawings, for the clear thickness that amplifies layer, film, panel, zone or the like.Reference symbol identical in the whole specification is represented components identical.Be appreciated that when with element (for example layer, film, zone or substrate) when being called " on another element ", described element can be directly on another element or can also have insertion element.
At first, with reference to the light source that be used for display unit of accompanying drawing detailed description according to example embodiment of the present invention.
Fig. 1 is the decomposition diagram according to the liquid crystal indicator of example embodiment of the present invention.
As shown in Figure 1, the liquid crystal indicator according to example embodiment of the present invention comprises the liquid crystal panel assembly 330 that is used to utilize the light displayed image; Be used to generate the backlight assembly 340 of light; Place the selective reflection film 347 between liquid crystal panel assembly 330 and the backlight assembly 340; Be used to lay framed 364 of liquid crystal panel assembly 330, selective reflection film 347 and backlight assembly 340; With top and lower box 361 and 362.
Liquid crystal panel assembly 330 comprises liquid crystal panel 300, chip for driving 510 and the flexible PCB 550 that is used for displayed image.
Liquid crystal panel 300 comprises thin-film transistor (TFT) arraying bread board 100, connect and towards the colorful optical filter array panel 200 of tft array panel 100 and place tft array panel 100 and colorful optical filter array panel 200 between the liquid crystal layer (not shown).
Tft array panel 100 has a plurality of pixel (not shown)s that are arranged to matrix.Each pixel is limited by gate line (not shown) and data wire (not shown) and has a pixel electrode.Gate line extends upward in first party, and data wire extends upward in the second party perpendicular to first direction.Data wire and gate line insulation are also crossing with gate line.In addition, each pixel has the TFT (not shown) that is connected to gate line, data wire and pixel electrode.
Colorful optical filter array panel 200 has redness, green and the blue color filter (not shown) that forms in thin film manufacture process, be the predetermined color component of white light in described embodiment.Colorful optical filter array panel 200 has the common electrode of pixel-oriented electrode.
Arrange the molecule of liquid crystal layer by being applied to voltage between pixel electrode and the common electrode, so that the polarized state of light that provides from backlight assembly 340 to be provided.
Chip for driving 510 is installed on the first end of tft array panel 100 drive signal is applied to data wire and gate line.Chip for driving 510 can be made up of the chip (for example, the chip of the chip of driving data lines and driving grid line) of two or more separation, perhaps can be made up of an integrated chip.By glass carry chip (chip on glass) (COG) technology chip for driving 510 is installed on the tft array panel 100.
Flexible PCB 550 is connected on the first end of tft array panel 100 and comes controlling and driving chip 510 to apply control signal.Time schedule controller is installed on the flexible PCB 550, with sequential of regulating drive signal and/or the memory that control is used for the storage data signal.Can utilize anisotropic conducting film flexible PCB 550 to be electrically connected to tft array panel 100 as media.
Backlight assembly 340 is formed on thinks under the liquid crystal panel assembly 330 that liquid crystal panel 300 provides full and uniform light.
Backlight assembly 340 comprises light source cell 344, the light guide 342 that is used for the path of direct light with the LED345 that is used to generate light, be used to improve the light that sends from light guide 342 luminance uniformity blooming piece 343 and be used to reflect the reflection of light device 341 that spills from light guide 342.
LED345 uses white light emitting diode as light source, and light source can comprise a plurality of blue-light LED chips that scribble green and red fluorescence material.In certain embodiments, LED345 can use white light LEDs as the basis and use red-light LED as auxiliary.
Light source cell 344 is set at a side of light guide 342 and provides light for light guide 342.The flexible PCB (not shown) that is used to control LED345 can be connected a side of light source cell 344.Although light source cell 344 is set at a side of light guide 342 in this example embodiment, if necessary, light source cell 344 can be arranged on the both sides of light guide 342, and perhaps a plurality of light source cells can be arranged under the light guide 342.Under latter event, can omit light guide 342.
Light guide 342 has and is used for light is directed to leaded light pattern (not shown) in the viewing area of liquid crystal panel for displaying images 300 on it.
Blooming piece 343 is placed between light guide 342 and the liquid crystal panel 300.The luminance uniformity of the light that provides from light guide 342 is provided for blooming piece 343; For example, be uniform substantially in the time of on being incident on liquid crystal panel 300.
Reflector 341 is formed under the light guide 342.Reflector 341 will reflex to light guide 342 from the light that light guide 342 spills, to improve the light service efficiency.
Framed 364 placing reflex device 341, light guide 342, blooming piece 343 and liquid crystal panels 300 successively.Framed 364 comprise open lower surface 251 and the sidewall 252 that extends from lower surface 251, and framed 364 are made by synthetic resin.
Sidewall 252 bendings of flexible PCB 550 along framed 364.A plurality of first connects projections 51 is formed on framed 364 the sidewall 252 to be connected with lower box 362.
Framed 364 are placed in the lower box of being made by metal material 362.Lower box 362 has base plate 261 and the side plate that extends from the edge of base plate 261 262 is laid the space with formation.Be formed in the side plate 262 corresponding to a plurality of first a plurality of connection grooves 61 that connect projection 51.
Connect framed 364 and lower box 362 in, the side plate 262 of lower box 362 partly is arranged on the outside of framed 364 sidewall 252.A plurality of first connects projections 51 inserts in a plurality of connection grooves 61 to connect framed 364 and lower box 362.Here, in order to reduce the overall size of liquid crystal indicator, with the contact site office of side plate 262 according to the thickness of the side plate 262 of lower box 362 attenuate framed 364 partly.
Upper box 361 is positioned at the upside of liquid crystal panel 300.Upper box 361 covering liquid crystal panel 300 are so that open the effective viewing area 300 that is used for displayed image and be connected to lower box 362.Upper box 361 guides the position of liquid crystal panels 300 and liquid crystal panel 300 is fixed in framed 364.
Now, describe in detail according to the light source cell 344 of example embodiment of the present invention and the LED345 of light source cell 344 with reference to Fig. 2 and Fig. 3.
Fig. 2 is the layout view according to the LED of example embodiment of the present invention, and Fig. 3 is the cross-sectional view that the line III-III along Fig. 2 is intercepted.
According to the LED of example embodiment of the present invention be included as the double-basis plate of forming by the heat sink substrate 120 of lower printed circuit board (PCB) substrate 110 and top bottom substrate 111, be formed on chip basement membrane 160 on the bottom substrate 111, be arranged on a plurality of led chips 130 on the chip basement membrane 160, cover the fluorescent material layer 140 of a plurality of led chips 130 and be formed on moulded resin layer 150 on the fluorescent material layer 140.
According to example embodiment of the present invention, the PCB substrate 110 that forms the bottom of bottom substrate 111 has the lead 181 and 182 that is used for driving LED.Lead can comprise the lead that is used for providing to led chip 130 electric power.
The heat sink substrate 120 that forms the top of bottom substrate 111 is made by the material with excellent thermal conductivity, and (for example) such as the metal of aluminium, and the lower surface of described heat sink substrate is connected to the upper surface of PCB substrate 110.Groove 121 is formed on the upper surface of heat sink substrate 120, and chip basement membrane 160 and led chip 130 are placed on the lower surface of groove 121.In certain embodiments, heat sink substrate 120 can be formed by the nonmetallic materials with fabulous thermal conductivity.
Through hole is formed on the lower surface that passes PCB substrate 110 in the bottom substrate 111 with the upper surface via heat sink substrate 120, and connector 171 and 172 is formed in the through hole to be electrically connected electrode and lead 181 and 182 of led chip 130.Via membrane 190 is formed on the inner surface of through hole so that connector 171 and 172 and 120 insulation of heat sink substrate.Needn't on the total inner surface of through hole, form via membrane 190, but preferably via membrane 190 is formed at least on the part that heat sink substrate 120 passes through.If heat sink substrate 120 is formed by insulating material, via membrane 190 can be omitted so.
Chip basement membrane 160 is formed by the insulating material that is used to make insulation between led chip 130 and the heat sink substrate 120.Chip basement membrane 160 also has through hole, and through hole is filled with connector 171 and 172.
The positive electrode and the negative electrode that are placed on the led chip 130 on the chip basement membrane 160 are electrically connected to connector 171 and 172 by flip-chip bonded (flip-chip bonding) or wire-bonded (wire bonding) technology.To illustrate after a while.
Led chip 130 can be the blue-ray LED that is used for the blue-ray LED of blue light-emitting or is used to launch blue light and ultraviolet light when applying the suitable signal of telecommunication.If necessary, led chip 130 can also be the ultraviolet leds that is used for only launching ultraviolet light.
A plurality of led chips 130 are installed on the single bottom substrate 111 and are electrically connected with parallel way each other.That is, for driving LED chip 130, first electrode of each led chip 130 is connected to specific node, and second electrode of each led chip 130 is connected to different nodes.For example, node can ground connection, and another node can be specific voltage, can utilize the potential difference driving LED chip 130 between the node.Therefore, compare, can produce and have the more light of high brightness with the LED that only forms with led chip.
Fluorescent material layer 140 is formed by the composite material with red and green fluorescent material, and covers led chip 130.Fluorescent material layer 140 is converted to green glow and ruddiness with blue light or the ultraviolet light that led chip 130 sends.If led chip 130 is ultraviolet leds, fluorescent material layer 140 can also comprise blue fluorescent material so.
Moulded resin layer 150 covers fluorescent material layer 140 with protection fluorescent material layer 140.
As mentioned above, molded a plurality of led chips 130 can obtain high-brightness LED by installing also on single bottom substrate 111.As a result, although the part of blue light that led chip 130 sends or ultraviolet light is converted to green glow and ruddiness, can guarantee enough brightness.
Fig. 4 is the vertical cross-section view of explanation according to the different structure of the LED that is used for two-dimension light source of example embodiment of the present invention to Fig. 6.
With reference to Fig. 4, reflectance coating 112 is coated on the heat sink substrate 120, chip basement membrane 160 is formed on the reflectance coating 112 in the groove of heat sink substrate 120, and the led chip flip-chip bonded is on the plug cap 173 and 174 on the top that is placed on chip basement membrane 160 via through hole.
Led chip comprises insulated substrate 131, be formed on n type semiconductor layer 132 on the insulated substrate 131, be formed on active layer 133 on the n type semiconductor layer 132, be formed on the p type semiconductor layer 134 on the active layer 133 and be respectively formed at the p type and n type semiconductor layer 134 and 132 on two electrodes 135 and 136.Two electrodes 136 and 135 are connected to plug cap 173 and 174 by conductie buffer device 175 and 176 respectively.As mentioned above, the flip-chip bonded technology relates to the technology that is used to be inverted led chip and directly electrode 135 and 136 is connected to plug cap 173 and 174 by conductie buffer device 175 and 176.
With reference to Fig. 5, reflectance coating 112 is coated on the heat sink substrate 120, chip basement membrane 160 is formed on the reflectance coating 112 in the groove of heat sink substrate 120, and the led chip wire-bonded is on the plug cap 173 and 174 on the top that is placed on chip basement membrane 160 via through hole.
Led chip comprises insulated substrate 131, be formed on n type semiconductor layer 132 on the insulated substrate 131, be formed on active layer 133 on the n type semiconductor layer 132, be formed on the p type semiconductor layer 134 on the active layer 133 and be respectively formed at the p type and n type semiconductor layer 134 and 132 on two electrodes 135 and 136.Two electrodes 136 and 135 are connected to plug cap 173 and 174 through lead 177 and 178 respectively.
As mentioned above, the wire-bonded technology relates to the insulated substrate 131 that is used for led chip and is connected to chip basement membrane 160 and utilizes lead 177 and 178 two electrodes 135 and 136 are connected to the technology of plug cap 173 and 174.
With reference to Fig. 6, reflectance coating 112 is coated on the heat sink substrate 120, chip basement membrane 160 is formed on the reflectance coating 112 in the groove of heat sink substrate 120, and an electrode of led chip is directly connected to plug cap 173 by conductie buffer device 175, and another electrode arrives plug cap 174 by lead 178 wire-bonded, and wherein plug cap 173 and 174 is placed on the top of chip basement membrane 160 via through hole.
Led chip comprises first electrode 351, be formed on electrically-conductive backing plate 354 on first electrode 351, be formed on n type semiconductor layer 355 on the electrically-conductive backing plate 354, be formed on the active layer 356 on the n type semiconductor layer 355 and be formed on second electrode 357 on the active layer 356.First electrode 351 is connected to plug cap 173, the second electrodes 357 by conductie buffer device 175 and is connected to plug cap 174 by lead 178.
As mentioned above, form fluorescent material layer on the single bottom substrate and on led chip with being connected in parallel to each other, can make the white light LEDs of high brightness by utilizing wire-bonded or flip-chip bonded technology or its combination that a plurality of led chips are installed in.
Fig. 7 is the curve chart that the curve of spectrum that obtains from the blue-light LED chip that uses yellow YAG fluorescent material and another blue-light LED chip that uses red and green fluorescent material is described.
As shown in Figure 7, for the blue-ray LED that uses yellow YAG fluorescent material, peak value appears at yellow wavelengths zone and the blue region place into the zone line between green and the red area.On the contrary, use at blue-ray LED under the situation of green and red fluorescence material, peak value appears at redness, green and blue region.Therefore, compare with the blue-light LED chip that uses yellow YAG fluorescent material, use the blue-light LED chip of red and green fluorescent material can have lower brightness, this is because the total amount of light is lower.On the other hand, the blue-light LED chip with red and green fluorescent material can have more excellent colorrendering quality (color reproducibility).Yet, similar with example embodiment of the present invention, can pile up fluorescent material on the single bottom substrate and on led chip and guarantee enough brightness by a plurality of led chips are installed in to make LED.
As mentioned above, according to embodiments of the invention, pile up fluorescent material on the single bottom substrate and on led chip and can obtain high-brightness LED to make LED by a plurality of led chips are installed in.
Although describe the present invention, yet be appreciated that the present invention is not limited to disclosed embodiment, on the contrary, mean and cover essence and interior various modifications and the equivalent arrangements of scope that is included in claims in conjunction with being considered as practical example embodiment at present.

Claims (17)

1. light-emitting diode comprises:
Bottom substrate with lower surface and upper surface:
Be arranged on a plurality of luminescence chips that also are electrically connected with parallel way each other on the upper surface of described bottom substrate; With
Cover the fluorescent material layer of described luminescence chip.
2. light-emitting diode according to claim 1 also comprises on the lower surface that is formed on described bottom substrate to be electrically connected the lead of described a plurality of luminescence chips in parallel.
3. light-emitting diode according to claim 2, wherein said bottom substrate have a plurality of through holes that are associated with described a plurality of luminescence chips, and
Wherein said light-emitting diode also comprises first connector and second connector, and described first connector and second connector are connected with described lead with second electrode via first electrode of the one or more through holes that are associated with specific luminescence chip with the described specific luminescence chip in described a plurality of luminescence chips.
4. light-emitting diode according to claim 3, wherein said bottom substrate comprise PCB substrate and the heat sink substrate that is connected on the described PCB substrate, and
Wherein said lead is formed on the lower surface of described PCB substrate, and described a plurality of luminescence chip is positioned on the upper surface of described heat sink substrate.
5. light-emitting diode according to claim 4, wherein said heat sink substrate comprises metal.
6. light-emitting diode according to claim 5, also comprise one or more chip basement membranes, described one or more chip basement membrane is formed on the described heat sink substrate, so that described first electrode of described specific luminescence chip and described second electrode and described heat sink substrate insulation.
7. light-emitting diode according to claim 6, also comprise one or more via membrane, described one or more via membrane is formed at least a portion on surface of the one or more through holes that are associated with described first luminescence chip, so that described first connector and described second connector and described heat sink substrate insulation.
8. light-emitting diode according to claim 1, wherein said a plurality of luminescence chip blue light-emittings.
9. light-emitting diode according to claim 8, wherein said fluorescent material layer comprises red fluorescence material and green fluorescent material.
10. light-emitting diode according to claim 1, wherein said a plurality of luminescence chip blue light-emittings and ultraviolet light.
11. light-emitting diode according to claim 10, wherein said fluorescent material layer comprises red fluorescence material and green fluorescent material.
12. light-emitting diode according to claim 1 also comprises the moulded resin layer that covers described fluorescent material layer.
13. light-emitting diode according to claim 1, wherein a plurality of grooves are formed on the upper surface of described bottom substrate, and
One or more in wherein said a plurality of luminescence chip are positioned in the associated channels of described a plurality of grooves at least in part.
14. light-emitting diode according to claim 1 also comprises the reflector on the upper surface that is formed on described bottom substrate.
15. a liquid crystal indicator comprises:
Light-emitting diode, described light-emitting diode comprises:
PCB substrate with lower surface, upper surface and a plurality of through holes,
Be formed on the lead on the lower surface of described PCB substrate,
Have the heat sink substrate of lower surface and upper surface and a plurality of through holes, the lower surface of wherein said heat sink substrate is positioned on the upper surface of described PCB substrate, and a plurality of through holes of wherein said PCB substrate substantially with a plurality of through-hole alignments of described heat sink substrate,
Be arranged on a plurality of luminescence chips on the upper surface of described heat sink substrate, described a plurality of luminescence chips comprise first luminescence chip,
First connector and second connector, described first connector and second connector are connected with described lead with second electrode via the through hole of described heat sink substrate and described PCB substrate first electrode with first luminescence chip,
Cover described luminescence chip fluorescent material layer and
Be formed on the moulded resin layer on the described fluorescent material layer; With
Liquid crystal panel, described liquid crystal panel are oriented to receive light from described light-emitting diode, and comprise two panels and place liquid crystal layer between described two panels.
16. liquid crystal indicator according to claim 15, wherein said liquid crystal panel comprises first side and second side, and wherein said liquid-crystal apparatus also comprises first polarizer on first side that is arranged on described liquid crystal panel and is arranged on second polarizer on second side of described liquid crystal panel.
17. liquid crystal indicator according to claim 15 also comprises one or more blooming that is positioned at least in part between described light-emitting diode and the described liquid crystal panel.
CN2006100647996A 2005-11-10 2006-11-10 High luminance light emitting diode and liquid crystal display using the same Expired - Fee Related CN1983590B (en)

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KR101171186B1 (en) 2012-08-06
US20070145383A1 (en) 2007-06-28
JP2007134722A (en) 2007-05-31
KR20070050159A (en) 2007-05-15
CN1983590B (en) 2010-05-26
US7868332B2 (en) 2011-01-11
TWI397191B (en) 2013-05-21

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