CN1653608A - 体半导体的鳍状fet器件及其形成方法 - Google Patents
体半导体的鳍状fet器件及其形成方法 Download PDFInfo
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- CN1653608A CN1653608A CNA038111691A CN03811169A CN1653608A CN 1653608 A CN1653608 A CN 1653608A CN A038111691 A CNA038111691 A CN A038111691A CN 03811169 A CN03811169 A CN 03811169A CN 1653608 A CN1653608 A CN 1653608A
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/063,994 US6642090B1 (en) | 2002-06-03 | 2002-06-03 | Fin FET devices from bulk semiconductor and method for forming |
US10/063,994 | 2002-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1653608A true CN1653608A (zh) | 2005-08-10 |
CN1296991C CN1296991C (zh) | 2007-01-24 |
Family
ID=29268594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038111691A Expired - Lifetime CN1296991C (zh) | 2002-06-03 | 2003-06-03 | 体半导体的鳍状fet器件及其形成方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6642090B1 (zh) |
EP (1) | EP1532659B1 (zh) |
JP (1) | JP4425130B2 (zh) |
KR (1) | KR100702553B1 (zh) |
CN (1) | CN1296991C (zh) |
AT (1) | ATE500610T1 (zh) |
AU (1) | AU2003237320A1 (zh) |
DE (1) | DE60336237D1 (zh) |
IL (1) | IL165546A0 (zh) |
TW (1) | TWI235457B (zh) |
WO (1) | WO2003103019A2 (zh) |
Cited By (17)
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CN101154597B (zh) * | 2006-09-29 | 2010-07-21 | 海力士半导体有限公司 | 鳍状晶体管的制造方法 |
CN102024743A (zh) * | 2009-09-18 | 2011-04-20 | 格罗方德半导体公司 | 半导体结构与在鳍状装置之鳍状结构之间形成隔离的方法 |
CN102034714A (zh) * | 2009-10-07 | 2011-04-27 | 格罗方德半导体公司 | 在块体半导体材料上用于形成隔离的鳍部结构的方法 |
CN102347349A (zh) * | 2010-07-28 | 2012-02-08 | 中国科学院微电子研究所 | 半导体结构及其制作方法 |
CN102446972A (zh) * | 2010-10-08 | 2012-05-09 | 台湾积体电路制造股份有限公司 | 具有带凹口的鳍片结构的晶体管及其制造方法 |
CN102456734A (zh) * | 2010-10-29 | 2012-05-16 | 中国科学院微电子研究所 | 半导体结构及其制作方法 |
CN103094089A (zh) * | 2011-11-03 | 2013-05-08 | 台湾积体电路制造股份有限公司 | 鳍式场效应晶体管栅极氧化物 |
CN103187261A (zh) * | 2011-12-29 | 2013-07-03 | 台湾积体电路制造股份有限公司 | 实现单鳍鳍式场效应晶体管器件的芯更改 |
WO2014032361A1 (zh) * | 2012-08-29 | 2014-03-06 | 北京大学 | 在体硅上制备独立双栅FinFET的方法 |
CN103650146A (zh) * | 2011-07-05 | 2014-03-19 | 国际商业机器公司 | 具有均匀高度和底部隔离的体鳍片fet |
CN104183486A (zh) * | 2013-05-21 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | 一种FinFET半导体器件的制备方法 |
CN105097935A (zh) * | 2014-05-23 | 2015-11-25 | 美国博通公司 | 具有无掺杂本体块的鳍式场效应晶体管 |
CN107591362A (zh) * | 2016-07-06 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN107919284A (zh) * | 2016-10-10 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN108305835A (zh) * | 2018-03-19 | 2018-07-20 | 中国科学院微电子研究所 | 一种鳍式晶体管器件的制造方法 |
CN108962826A (zh) * | 2017-03-11 | 2018-12-07 | 格芯公司 | 在finfet sram阵列中减少鳍片宽度以减轻低电压带位故障的方法 |
CN109003902A (zh) * | 2018-08-01 | 2018-12-14 | 中国科学院微电子研究所 | 一种半导体结构及其制备方法 |
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US6720619B1 (en) * | 2002-12-13 | 2004-04-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices |
US7087499B2 (en) * | 2002-12-20 | 2006-08-08 | International Business Machines Corporation | Integrated antifuse structure for FINFET and CMOS devices |
US6762483B1 (en) * | 2003-01-23 | 2004-07-13 | Advanced Micro Devices, Inc. | Narrow fin FinFET |
US6855606B2 (en) * | 2003-02-20 | 2005-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-rod devices |
US6787854B1 (en) * | 2003-03-12 | 2004-09-07 | Advanced Micro Devices, Inc. | Method for forming a fin in a finFET device |
US7074656B2 (en) * | 2003-04-29 | 2006-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping of semiconductor fin devices |
US6872647B1 (en) * | 2003-05-06 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for forming multiple fins in a semiconductor device |
US6756643B1 (en) * | 2003-06-12 | 2004-06-29 | Advanced Micro Devices, Inc. | Dual silicon layer for chemical mechanical polishing planarization |
US7005330B2 (en) * | 2003-06-27 | 2006-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for forming the gate electrode in a multiple-gate transistor |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
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US6812119B1 (en) * | 2003-07-08 | 2004-11-02 | Advanced Micro Devices, Inc. | Narrow fins by oxidation in double-gate finfet |
US7078742B2 (en) | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
US7301206B2 (en) * | 2003-08-01 | 2007-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors |
US6787476B1 (en) * | 2003-08-04 | 2004-09-07 | Advanced Micro Devices, Inc. | Etch stop layer for etching FinFET gate over a large topography |
US7714384B2 (en) * | 2003-09-15 | 2010-05-11 | Seliskar John J | Castellated gate MOSFET device capable of fully-depleted operation |
KR100555518B1 (ko) * | 2003-09-16 | 2006-03-03 | 삼성전자주식회사 | 이중 게이트 전계 효과 트랜지스터 및 그 제조방법 |
US6970373B2 (en) * | 2003-10-02 | 2005-11-29 | Intel Corporation | Method and apparatus for improving stability of a 6T CMOS SRAM cell |
JP3863516B2 (ja) * | 2003-10-03 | 2006-12-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
DE10348007B4 (de) * | 2003-10-15 | 2008-04-17 | Infineon Technologies Ag | Verfahren zum Strukturieren und Feldeffekttransistoren |
US7888201B2 (en) * | 2003-11-04 | 2011-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors |
US7029958B2 (en) * | 2003-11-04 | 2006-04-18 | Advanced Micro Devices, Inc. | Self aligned damascene gate |
US7091566B2 (en) * | 2003-11-20 | 2006-08-15 | International Business Machines Corp. | Dual gate FinFet |
KR100585111B1 (ko) * | 2003-11-24 | 2006-06-01 | 삼성전자주식회사 | 게르마늄 채널 영역을 가지는 비평면 트랜지스터 및 그제조 방법 |
KR100518602B1 (ko) * | 2003-12-03 | 2005-10-04 | 삼성전자주식회사 | 돌출된 형태의 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
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Also Published As
Publication number | Publication date |
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CN1296991C (zh) | 2007-01-24 |
AU2003237320A8 (en) | 2003-12-19 |
TW200411833A (en) | 2004-07-01 |
KR100702553B1 (ko) | 2007-04-04 |
JP2005528793A (ja) | 2005-09-22 |
JP4425130B2 (ja) | 2010-03-03 |
WO2003103019A3 (en) | 2004-03-18 |
TWI235457B (en) | 2005-07-01 |
ATE500610T1 (de) | 2011-03-15 |
IL165546A0 (en) | 2006-01-15 |
DE60336237D1 (de) | 2011-04-14 |
WO2003103019A2 (en) | 2003-12-11 |
EP1532659B1 (en) | 2011-03-02 |
KR20050003401A (ko) | 2005-01-10 |
EP1532659A2 (en) | 2005-05-25 |
EP1532659A4 (en) | 2005-12-14 |
US6642090B1 (en) | 2003-11-04 |
AU2003237320A1 (en) | 2003-12-19 |
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