CN1443366A - 利用化学吸附技术形成硼化物阻挡层 - Google Patents
利用化学吸附技术形成硼化物阻挡层 Download PDFInfo
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- CN1443366A CN1443366A CN01812886A CN01812886A CN1443366A CN 1443366 A CN1443366 A CN 1443366A CN 01812886 A CN01812886 A CN 01812886A CN 01812886 A CN01812886 A CN 01812886A CN 1443366 A CN1443366 A CN 1443366A
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- 238000000034 method Methods 0.000 title claims abstract description 105
- 230000004888 barrier function Effects 0.000 title claims description 38
- 230000015572 biosynthetic process Effects 0.000 title claims description 15
- 239000003870 refractory metal Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 82
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052796 boron Inorganic materials 0.000 claims abstract description 66
- 150000001875 compounds Chemical class 0.000 claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 200
- 239000007789 gas Substances 0.000 claims description 41
- 238000010926 purge Methods 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 30
- 239000002356 single layer Substances 0.000 claims description 27
- 229910000085 borane Inorganic materials 0.000 claims description 25
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 239000011651 chromium Substances 0.000 claims description 14
- 239000010955 niobium Substances 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- 229910021555 Chromium Chloride Inorganic materials 0.000 claims description 4
- 229910021550 Vanadium Chloride Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 claims description 4
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 claims description 4
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 4
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 claims description 4
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 12
- 238000000576 coating method Methods 0.000 claims 12
- 239000000428 dust Substances 0.000 claims 2
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- 238000003860 storage Methods 0.000 claims 1
- 238000007736 thin film deposition technique Methods 0.000 claims 1
- 150000001639 boron compounds Chemical class 0.000 abstract description 13
- 239000002131 composite material Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 26
- 230000010349 pulsation Effects 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 15
- 239000010949 copper Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- -1 borane compound Chemical class 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N trimethyl-ethylene Natural products CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/38—Borides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract
公开了用于集成电路制造的硼化物层的形成方法。在一个实施例中,通过将含硼化合物(305)和一种难熔金属化合物(307)的单层化学吸附到衬底上形成硼化物层。在另一个实施例中,硼化物层具有复合结构。该复合硼化物层结构(409)包括两种或者多种难熔金属(M1,M2)。复合硼化物层通过在衬底上依次化学吸附硼化合物(405)和两种或者多种难熔金属化合物(407)形成。
Description
发明背景
本发明涉及硼化物阻挡层的形成,更具体地说,涉及利用化学吸附技术的硼化物阻挡层。
在集成电路的制造中,经常使用阻挡层来防止金属和其它杂质扩散到位于这些阻挡层下面的区中。这些下面的区可以包含出现在集成电路中的晶体管的栅、电容器介质、半导体衬底、金属线以及其它的结构。
对于目前半微米(0.5μm)半导体器件的诞生,在互连层之间的界面处发生的任何细微反应都会引起得到的集成电路性能的降低(例如互连层的电阻率增加)。结果,阻挡层已经成为用于提高互连金属化配置的重要部件。
由于难熔金属化合物例如氮化物、硼化物和碳化物的化学惰性和低电阻率(例如电阻率一般低于大约200μΩ-cm,因此已经建议使用这些化合物作为扩散阻挡物。尤其是,因为由硼化钛(TiB2)材料形成的层通常具有低的电阻率(例如电阻率低于大约150μΩ-cm),因此已经建议使用硼化物例如硼化钛作为阻挡材料。
硼化物阻挡层一般利用化学汽相淀积(CVD)技术形成。例如,利用CVD,四氯化钛(TiCl4)可以与乙硼烷(B2H6)反应形成硼化钛(TiB2),然而,当使用Cl基化学物质形成硼化物阻挡层时,会出现可靠性问题。尤其是,利用CVD氯基化学物质形成的硼化物阻挡层一般具有高的氯(Cl)含量(例如,氯含量高于大约3%)。因为氯会从硼化物阻挡层迁移到相邻的互连层中,因此高的氯含量是不希望的,它会增加这些互连层的接触电阻和由这些互连层制成的集成电路特性的潜在变化。
因此,本领域需要用于集成电路制造的可靠的硼化物阻挡层。尤其希望可用于互连结构的硼化物阻挡层应是可靠的。
发明综述
提供用于集成电路制造的硼化物阻挡层。在一个实施例中,硼化物阻挡层包括一种难熔金属。可以通过在衬底上依次用化学方法吸附硼化合物和难熔金属化合物的交替的单层形成硼化物阻挡层。
在一个另外的实施例中,形成了复合硼化物阻挡层。复合硼化物阻挡层包括两种或者更多种难熔金属。复合硼化物阻挡层可以通过依次将硼化合物和两种或者多种难熔金属化合物的单层交替化学吸附到衬底上形成。
硼化物阻挡层适宜于集成电路制造工艺。在一个集成电路制造工艺中,硼化物阻挡层包括一种难熔金属。通过依次在衬底上化学吸附硼化合物和一种难熔金属的交替单层,形成硼化物阻挡层。此后,在硼化物阻挡层上,淀积一个或多个金属层,以便形成互连结构。
在另一个集成电路制造工艺中,硼化物阻挡层具有复合结构。该复合硼化物阻挡层包括两种或多种难熔金属。通过在衬底上依次化学吸附硼化合物和两种或多种难熔金属化合物单层形成该复合硼化物阻挡层。此后,在复合硼化物阻挡层上淀积一个或多个金属层,以便形成互连结构。
附图的简要说明
通过下面结合附图的详细描述,可以更好地理解本发明的教导,其中:
图1描绘了装置的示意图,该装置可用于实施这里所描述的实施例;
图2a-2c描绘了在引入硼化物阻挡层的集成电路制造工艺的不同阶段衬底结构的截面图;
图3a-3c描绘了经过硼化合物和一种难熔金属化合物的第一依次化学吸附工艺以便形成硼化物阻挡层的衬底截面图;
图4a-4d描绘了经过硼化合物和两种难熔金属化合物的第二依次化学吸附工艺以便形成复合硼化物阻挡层的衬底截面图;
图5a-5d描绘了经过硼化合物和两种难熔金属化合物的第三依次化学吸附工艺以便形成复合硼化物阻挡层的衬底截面图;以及
图6a-6c描绘了在引入多于一个硼化物阻挡层的集成电路制造工艺的不同阶段衬底结构的截面图。
本发明的详细描述
图1描绘了根据这里所描述的实施例可以用来形成硼化物阻挡层的晶片处理系统10的示意图。系统10包括处理室100、气体面板(gaspanel)130、控制单元110以及其他硬件部件例如电源106和真空泵102。下面简要描述处理室100的显著特征。室100
处理室100通常容纳有支撑基座150,该支撑基座150用来在处理室100中支撑衬底例如半导体晶片190。根据具体的工艺,可以将半导体晶片190在层形成之前加热到想要的温度。
在室100中,利用埋置的加热器170加热晶片支撑基座150。例如,可以通过从AC电源106将电流施加到加热器元件170来电阻性地加热基座150。结果,晶片190由基座150加热,并且可以保持在想要的工艺温度范围内,例如大约20℃-500℃。
温度传感器172例如热电偶也埋在晶片支撑基座150中,以便以传统的方式监视基座150的温度。例如,测量的温度可以用于反馈回路,以便控制由电源106施加给加热器元件170的电流,使得可以将晶片温度保持或者控制在适于特定工艺的理想温度内。可以利用辐射热(未示出)加热基座150。
真空泵102用来从处理室100抽出工艺气体(process gases),帮助保持室100内希望的压力。使用孔口(orifice)120将工艺气体引入处理室100中。孔口120的尺寸是可变的,并且一般随着处理室100的尺寸而变。
孔口120通过阀门125与气体面板130连接。气体面板130从两个或更多个气源135和136将工艺气体通过孔口120和阀门125供应到处理室100中。气体面板130还从吹扫用气源138通过孔口120和阀门125将吹扫用气体供应到处理室100中。
在晶片处理顺序的不同步骤中,控制单元110例如计算机控制流过气体面板130以及阀门125的各种工艺气体的流动。具体地说,控制单元110包括中央处理单元(CPU)112、支持电路114和包含相关控制软件的存储器116。除了控制通过气体面板130的工艺气体之外,在其他步骤中,控制单元110还负责自动控制晶片处理所需的大量步骤,例如晶片传输、温度控制和室抽气。
控制单元110可以是任何一种形式的普通目的的计算机处理器和子处理器,其中的计算机处理器可以用于控制各种室的工业环境。该计算机处理器可以使用任何适合的存储器例如随机存取存储器、只读存储器、软盘驱动器、硬盘驱动器或数字存储、局域或远程(local orremote)的任何其他形式。各种支持电路可以与计算机处理器连接,以便以通常的方式支持处理器。所需要的软件程序可以储存在存储器中或者由位于远程的第二处理器执行。控制单元110和晶片处理系统10的各个部件之间的双向通讯通过共同称为信号总线118的大量信号电缆来实现,图1中示出了一些信号电缆。硼化物阻挡层的形成
图2a-2c说明了用于互连结构的集成电路制造的硼化物层形成的一个优选实施例。通常,衬底200指的是其上进行膜处理的任何工件,通常使用衬底结构250来表示衬底200以及其他形成在衬底200上的材料层。根据处理的具体阶段,衬底200可以是硅半导体晶片或者其它已经形成在晶片上的材料层。例如,图2a示出了其上具有材料层202的衬底结构250的截面图。在该特定的说明中,材料层202可以是氧化物(例如二氧化硅)。已经按惯常的方式形成和布图了材料层202,以便提供延伸到衬底200顶表面200T的接触孔202H。
图2b显示了贴敷形成在衬底结构250上的硼化物层204。通过在衬底结构250上化学吸附含硼化合物和难熔金属化合物的单层形成硼化物层204。
通过依次将含硼化合物和一种或者多种难熔金属化合物提供到处理室中化学吸附单层。在第一依次化学吸附中,在衬底300上交替化学吸附含硼化合物和一种难熔金属化合物的单层,如图3a-3c所示。
图3a描绘了在集成电路制造的阶段中衬底300的截面图。通过将含硼气体的脉动(pulse)引入类似于图1所示的处理室中,在衬底300上化学吸附含硼化合物305的单层。含硼化合物一般使硼原子310与一个或者多个反应物质b315相结合。在硼化物层形成过程中,反应物质b315形成由真空系统从衬底300输送的副产物。
由于仅一个单层可以在给定的脉动过程中化学吸附到衬底300表面上,因此含硼化合物的化学吸附单层305是自限定(self-limiting)的。由于衬底具有有限的表面区,因此仅一个含硼化合物的单层化学吸附在衬底上。该有限的表面区提供了用于化学吸附含硼化合物的有限的位置。一旦有限的位置被含硼化合物占有,将阻碍含硼化合物的进一步化学吸附。
含硼化合物例如可以是具有通式BxHy的硼烷化合物,其中x具有1和1 0之间的范围,y具有3和30之间的范围。例如硼烷(BH3)、乙硼烷(B2H6)、三硼烷(B3H9)、四硼烷(B4H12)、五硼烷(B5H15)、六硼烷(B6H18)、七硼烷(B7H21)、八硼烷(B8H24)、九硼烷(B9H27)和十硼烷(B10H30)可以用作含硼化合物。
将硼化合物的单层化学吸附到衬底300上之后,通过引入吹扫用气体的脉动从处理室清除过量的含硼化合物。吹扫用气体例如尤其可以使用氦(He)、氩(Ar)、氮(N2)、氨(NH3)和氢(H2)。
处理室已经用气体吹扫之后,将一种难熔金属化合物的脉动引入处理室。参考图3b,难熔金属化合物层307化学吸附到硼单层305上。难熔金属化合物一般使难熔金属原子320与一种或者多种反应物质a325相结合。
难熔金属化合物的化学吸附单层307与含硼单层305反应以便形成硼化物层309。反应物质a325和b315形成通过真空系统从衬底300表面传输的副产物ab330。由于仅一个硼化合物的单层化学吸附到衬底300表面上,因此,难熔金属化合物307与硼单层305的反应是自限定的。
难熔金属化合物可以包含与反应物质例如氯(Cl)和氟(F)相结合的难熔金属,例如钛(Ti)、钨(W)、钽(Ta)、锆(Zr)、铪(Hf)、钼(Mo)、铌(Nb)、钒(V)和铬(Cr)。例如,四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、五氯化钒(VCl5)和四氯化铬(CrCl4)可以用作难熔金属化合物。
难熔金属化合物的单层化学吸附到衬底300上之后,通过引入另一吹扫用气体的脉动从处理室清除任何过量的难熔金属化合物。此后,如图3c所示,重复含硼化合物和难熔金属化合物的交替单层的硼化物层淀积顺序,直到获得想要的硼化物层厚度。例如,硼化物层的厚度可以为200至大约5000,大约2500 更好。
在图3a-3c中,将硼化物层的形成描绘为从在衬底上化学吸附含硼单层开始,接着化学化学吸附难熔金属化合物的单层。或者,硼化物层形成也可以从在衬底上化学吸附难熔金属化合物的单层开始,接着化学吸附含硼化合物的单层。
每次含硼化合物、一种或者两种难熔金属化合物和吹扫用气体的脉动时间是可变的,并且依赖于淀积室以及与其连接的真空系统的体积容量。同样,每次脉动之间的时间也是可变的,依赖于处理室以及与其连接的真空系统的体积容量。
总之,可以在低于大约500℃的衬底温度和低于大约100乇的室压力下化学吸附交替的单层。对于含硼化合物来说低于大约1秒的脉动时间以及对于难熔金属化合物来说低于大约1秒的脉动时间一般足以在衬底上化学吸附包括硼化物层的交替单层。对于吹扫用气体来说低于大约1秒的脉动时间一般足以除去处理室中遗留的反应副产物以及任何残余的材料。
在第二化学吸附工艺中,含硼单层和两种或者多种难熔金属化合物交替化学吸附在衬底上以便形成复合硼化物层。图4a描绘了可以用于集成电路制造阶段中的衬底400的截面图。与图1所示的晶片处理系统一样,根据上面参考图2a-2c所描述的处理条件,通过将含硼化合物的脉动引入到处理室中,在衬底400上化学吸附含硼化合物的自限定单层405。含硼化合物使硼原子410与一种或者多种反应物质b415相结合。
在硼化合物单层405化学吸附到衬底400上之后,通过引入吹扫用气体从处理室清除过量的含硼化合物。
参考图4b,用吹扫气体吹扫处理室之后,将第一难熔金属化合物M1a1的脉动引入到处理室中。第一难熔金属化合物层407化学吸附在硼单层405上。第一难熔金属化合物一般使第一难熔金属原子M1420与一种或者多种反应物质a1425相结合。
第一难熔金属化合物的化学吸附单层407与含硼单层405反应,以便形成硼化物单层409。反应物质a1425和b415形成通过真空系统从衬底400传输副的产物a1b430。
第一难熔金属化合物的单层407化学吸附到衬底400上之后,通过引入另一吹扫用气体的脉动从处理室清除过量的第一难熔金属化合物M1a1。
然后将另一个含硼化合物的脉动引入到处理室中。在第一难熔金属单层407上化学吸附含硼化合物的单层405,如图4c所示。含硼化合物的化学吸附单层405与第一难熔金属单层407反应,以便形成硼化物层409。反应物质a1425和b415形成通过真空系统从衬底400传输的副产物a1b430。
硼化合物的单层405化学吸附到第一难熔金属单层407上之后,通过引入吹扫用气体的脉动从处理室清除过量的含硼化合物。
参考图4d,已经用吹扫用气体吹扫处理室之后,将第二难熔金属化合物M2a1的脉动引入到处理室中。第二难熔金属化合物层411化学吸附到硼单层405上。第二难熔金属化合物一般使第二难熔金属原子m2440与一种或者多种反应物质a1425相结合。
第二难熔金属化合物的化学吸附单层411与含硼单层405反应,以便形成硼化物复合层409。反应物质a1425和b415形成通过真空系统从衬底400传输的副产物a1b430。
第二难熔金属化合物的单层411化学吸附到衬底400上之后,通过引入另一吹扫用气体的脉动从处理室清除过量的第二难熔金属化合物M2a1。
此后,重复含硼化合物和两种难熔金属化合物M1a1和M2a1的交替单层的硼化物层淀积顺序,直到获得想要的硼化物层厚度。
在图4a-4d中,将硼化物层的形成描绘为从在衬底上化学吸附含硼单层开始,接着化学吸附两种难熔金属化合物的单层。或者,硼化物层形成也可以从在衬底上化学吸附两种难熔金属化合物中的任何一种的单层开始,接着化学吸附含硼化合物的单层。任选地,还可以在衬底400上化学吸附多于两种难熔金属化合物的单层。
在第三化学吸附工艺中,在衬底上交替化学吸附含硼单层和两种或者多种难熔金属化合物,以便形成硼化物层,如图5a-5d所示。
图5a描绘了集成电路制造的阶段中衬底500的截面图。与图1所示的晶片处理系统一样,根据上面参考图2a-2c所描述的处理条件,通过将第一难熔金属化合物M1a1的脉动引入到处理室中,在衬底500上化学吸附第一难熔金属化合物的自限定单层507。
在第一难熔金属化合物单层507化学吸附到衬底500上之后,通过引入另一吹扫用气体的脉动从处理室清除过量的第一难熔金属化合物。
参考图5b,用吹扫气体吹扫处理室之后,将第二难熔金属化合物M2a1的脉动引入到处理室中。第二难熔金属化合物层511化学吸附在第一难熔金属单层507上。
第二难熔金属化合物单层511化学吸附到衬底500上之后,通过引入另一吹扫用气体的脉动从处理室清除过量的第二难熔金属化合物M2a1。
然后将含硼化合物的脉动引入到处理室中。含硼化合物的单层505化学吸附在第二难熔金属化合物单层511上,如图5c所示。含硼化合物的化学吸附单层505与第二难熔金属单层511反应,以便形成硼化物层509。反应物质a1525和b515形成通过真空系统从衬底500传输的副产物a1b530。
硼化合物的单层505化学吸附到第二难熔金属单层511上之后,通过引入吹扫用气体的脉动从处理室清除过量的含硼化合物。
参考图5d,已经用吹扫用气体吹扫处理室之后,将第一难熔金属化合物M1a1的脉动引入到处理室中。第一难熔金属化合物单层507化学吸附到硼单层505上。
第一难熔金属化合物的化学吸附单层507与含硼单层505反应,以便形成硼化物单层509。反应物质a1525和b515形成通过真空系统从衬底500传输的副产物a1b530。
第一难熔金属化合物的单层507化学吸附到衬底500上之后,通过引入另一吹扫用气体的脉动从处理室清除过量的第一难熔金属化合物M1a1。
此后,重复含硼化合物和两种难熔金属化合物M1a1和M2a1的交替单层的硼化物层淀积顺序,直到获得想要的硼化物层厚度。
在图5a-5d中,将硼化物层的形成描绘为从在衬底上化学吸附第一难熔金属单层开始,接着化学吸附第二难熔金属化合物和含硼化合物的单层。或者,硼化物层形成也可以从在衬底上化学吸附含硼化合物的单层开始,接着化学吸附两种难熔金属化合物的单层。任选地,还可以在衬底500上化学吸附多于两种难熔金属化合物的单层。
由于用于形成硼化物层的单层化学吸附原理,上面描述的顺序淀积工艺有利地为硼化物层提供了好的步骤分布(coverage)。尤其是,相信利用单层化学吸附原理的硼化物层的形成贡献了一种在复杂衬底形貌(topographies)上接近完美的步骤分布。
此外,在化学吸附工艺中,由于仅一个单层化学吸附在形貌表面,因此一旦已经形成单层,淀积区域的尺寸很大程度上独立于留在反应室中的母体气体的量。
参考图2c,形成硼化物层204之后,可以在其上形成接触层206以完成互连结构。接触层206最好选自铝(Al)、铜(Cu)、钨(W)及其组合。
接触层206例如可以使用化学汽相淀积(CVD)、物理汽相淀积(PVD)或者CVD和PVD的组合形成。例如,可以从包含氢化二甲基铝(DMAH)和氢(H2)或者氩(Ar)的气体混合物或其它含DMAH的化合物的反应淀积铝(Al)层,可以从包含Cu+2(hfac)2(六氟乙酰丙酮合铜)、Cu+2(fod)2(七氟二甲基辛烷双烯铜)、Cu+1hfacTMVS(六氟乙酰丙酮三甲基乙烯基硅烷铜)或者其组合淀积CVD铜层,可以从包含六氟化钨(WF6)的气体混合物淀积CVD钨层。由铜靶、铝靶或者钨靶淀积PVD层。
图6a-6c显示了用于互连结构的集成电路制造的硼化物层形成的另一个实施例。总的来说,衬底600指的是在其上进行膜处理的任何工件,通常使用衬底结构650来表示衬底600以及其它形成在衬底600上的材料层。根据具体的处理阶段,衬底600可以是硅半导体晶片,或者其它已经形成在晶片上的材料层。例如,图6a显示了其上具有材料层602的衬底结构650的截面图。在这个具体的说明中,材料层602可以是氧化物(例如二氧化硅)。通常材料层602已经形成并布图以便提供延伸到衬底600上表面600T的接触孔602H。
图6b显示了贴敷形成在衬底结构650上的两个硼化物层604和606。该硼化物层604和606都通过在衬底结构650上化学吸附含硼化合物和一种或者多种难熔金属化合物的单层而形成的,如上面参考图3a-5d所描述的。两个硼化物层604和606每个都可以包括一种或者两种难熔金属。两个或者多个硼化物层604和606的厚度可以随着处理的具体阶段变化。每个硼化物层604和606例如都具有大约200-5000范围内的厚度。
参考图6c,形成硼化物层604和606之后,可以在其上形成接触层608以完成互连结构。接触层608最好选自铝(Al)、铜(Cu)、钨(W)以及组合。
上述讨论中公开的具体处理条件只是为了说明。在本发明的硼化物层形成中,也可以使用其它的工艺参数组合,例如母体和惰性气体、流动范围、压力和温度。
尽管结合本发明的教导显示并详细描述了几个最佳实施例,但本领域技术人员仍然结合这些教导可以很容易地想出许多其它变化了的
实施例。
Claims (55)
1.一种用于集成电路制造的膜的淀积方法,包括步骤:
(a)在衬底上形成至少一个硼化物层,其中所述至少一个硼化物层使用依次化学吸附工艺形成。
2.权利要求1的方法,其中所述至少一个硼化物层包括一种或者多种难熔金属。
3.权利要求2的方法,其中所述一种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
4.权利要求1的方法,其中步骤(a)的依次化学吸附工艺包括步骤:
(b)在衬底上化学吸附含硼化合物和一种或者多种难熔金属化合物的单层,以便在其上形成硼化物层。
5.权利要求4的方法,其中在每个单层的化学吸附之后,用吹扫用气体对衬底进行吹扫。
6.权利要求4的方法,其中含硼化合物具有通式BxHy,其中x具有1和10之间的范围,y具有3和30之间的范围。
7.权利要求6的方法,其中含硼化合物选自硼烷(BH3)、乙硼烷(B2H6)、三硼烷(B3H9)、四硼烷(B4H12)、五硼烷(B5H15)、六硼烷(B6H18)、七硼烷(B7H21)、八硼烷(B8H24)、九硼烷(B9H27)和十硼烷(B10H30)。
8.权利要求4的方法,其中一种或者多种难熔金属化合物选自四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、氯化钒(VClx)和氯化铬(CrClx)。
9.权利要求4的方法,其中在低于大约500℃的温度下进行步骤(b)。
10.权利要求4的方法,其中在低于大约100乇的压力下进行步骤(b)。
11.权利要求5的方法,其中吹扫用气体选自氦(He)、氩(Ar)、氢(H2)、氮(N2)、氨(NH3)及其组合。
12.权利要求4的方法,其中含硼化合物和一种或者多种难熔金属化合物的单层交替化学吸附在衬底上。
13.权利要求12的方法,其中一个含硼化合物的单层化学吸附在一种或者多种难熔金属化合物的每个化学吸附单层之间。
14.权利要求12的方法,其中在一种或者多种难熔金属化合物的两个或者多个单层化学吸附在衬底上之后,一个含硼化合物的单层化学吸附在其上。
15.一种用于集成电路制造的阻挡层结构的形成方法,包括步骤:
(a)提供其上具有氧化物层的衬底,其中氧化物层具有形成在其内且到达衬底顶表面的孔;和
(b)在衬底表面和氧化物层的至少部分上形成至少一个硼化物层,其中使用依次化学吸附工艺形成所述至少一个硼化物层。
16.权利要求15的方法,其中所述至少一个硼化物层包括一种或者多种难熔金属。
17.权利要求16的方法,其中所述一种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
18.权利要求15的方法,其中步骤(b)的依次化学吸附工艺包括步骤:
(b)在衬底上化学吸附含硼化合物和一种或者多种难熔金属化合物的单层,以便在其上形成硼化物层。
19.权利要求18的方法,其中在每个单层的化学吸附之后,用吹扫用气体对衬底进行吹扫。
20.权利要求18的方法,其中含硼化合物具有通式BxHy,其中x具有1和10之间的范围,y具有3和30之间的范围。
21.权利要求20的方法,其中含硼化合物选自硼烷(BH3)、乙硼烷(B2H6)、三硼烷(B3H9)、四硼烷(B4H12)、五硼烷(B5H15)、六硼烷(B6H18)、七硼烷(B7H21)、八硼烷(B8H24)、九硼烷(B9H27)和十硼烷(B10H30)。
22.权利要求18的方法,其中一种或者多种难熔金属化合物选自四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、氯化钒(VClx)和氯化铬(CrClx)。
23.权利要求18的方法,其中在低于大约500℃的温度下进行步骤(c)。
24.权利要求18的方法,其中在低于大约100乇的压力下进行步骤(c)。
25.权利要求19的方法,其中吹扫用气体选自氦(He)、氩(Ar)、氢(H2)、氮(N2)、氨(NH3)及其组合。
26.权利要求18的方法,其中含硼化合物和一种或者多种难熔金属化合物的单层交替化学吸附在衬底上。
27.权利要求26的方法,其中一个含硼化合物的单层化学吸附在一种或者多种难熔金属化合物的每个化学吸附单层之间。
28.权利要求26的方法,其中在一种或者多种难熔金属化合物的两个或者多个单层化学吸附在衬底上之后,一个含硼化合物的单层化学吸附在其上。
29.一种用于集成电路制造的阻挡层结构的形成方法,包括步骤:
(a)提供其上具有氧化物层的衬底,其中氧化物层具有形成在其内且到达衬底顶表面的孔;和
(b)在衬底表面和氧化物层的至少部分上形成第一硼化物层,其中第一硼化物层包括两种或者多种难熔金属;和
(c)在第一硼化物层上形成第二硼化物层,其中第二硼化物层包括两种或者多种难熔金属。
30.权利要求29的方法,其中第一硼化物层具有小于大约100(埃)的厚度。
31.权利要求29的方法,其中第二硼化物层具有大约500-3000的厚度范围。
32.权利要求29的方法,其中第一硼化物层和第二硼化物层每个都使用依次化学吸附工艺形成。
33.权利要求32的方法,其中步骤(a)的依次化学吸附工艺包括步骤:
(a)在衬底上化学吸附含硼化合物和一种或者多种难熔金属化合物的单层。
34.权利要求33的方法,其中含硼化合物和一种或者多种难熔金属化合物的单层交替化学吸附在衬底上。
35.权利要求34的方法,其中一个含硼化合物的单层化学吸附在一种或者多种难熔金属化合物的每个化学吸附单层之间。
36.权利要求34的方法,其中在一种或者多种难熔金属化合物的两个或者多个单层化学吸附在衬底上之后,一个含硼化合物的单层化学吸附在其上。
37.包含软件程序(routine)的计算机存储介质,当执行时,该软件程序使普通目的的计算机使用薄膜淀积方法控制淀积室,该方法包括步骤:
(a)在衬底上形成硼化物层,其中使用依次化学吸附工艺形成硼化物层。
38.权利要求37的方法,其中硼化物层包括一种或者多种难熔金属。
39.权利要求38的方法,其中所述一种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
40.权利要求37的方法,其中步骤(a)的依次化学吸附工艺包括步骤:
(a)在衬底上化学吸附含硼化合物和一种或者多种难熔金属化合物的单层,以便在其上形成硼化物层。
41.权利要求40的方法,其中在每个单层的化学吸附之后,用吹扫用气体对衬底进行吹扫。
42.权利要求40的方法,其中含硼化合物具有通式BxHy,其中x具有1和10之间的范围,y具有3和30之间的范围。
43.权利要求42的方法,其中含硼化合物选自硼烷(BH3)、乙硼烷(B2H6)、三硼烷(B3H9)、四硼烷(B4H12)、五硼烷(B5H15)、六硼烷(B6H18)、七硼烷(B7H21)、八硼烷(B8H24)、九硼烷(B9H27)和十硼烷(B10H30)。
44.权利要求40的方法,其中一种或者多种难熔金属化合物选自四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、氯化钒(VClx)和氯化铬(CrClx)。
45.权利要求40的方法,其中含硼化合物和一种或者多种难熔金属化合物的单层交替化学吸附在衬底上。
46.权利要求45的方法,其中一个含硼化合物的单层化学吸附在一种或者多种难熔金属化合物的每个化学吸附单层之间。
47.权利要求45的方法,其中在一种或者多种难熔金属化合物的两个或者多个单层化学吸附在衬底上之后,一个含硼化合物的单层化学吸附在其上。
48.一种器件,包括:
至少一个形成在衬底上的硼化物层,其中所述至少一个硼化物层之一包括两种或者多种难熔金属。
49.权利要求48的方法,其中所述两种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
50.一种器件,包括:
其上具有氧化物层的衬底,其中氧化物层具有形成在其内且到达衬底顶表面的孔;和
在衬底表面和氧化物层的部分上形成的至少一个硼化物层,其中所述至少一个硼化物层之一包括两种或者多种难熔金属。
51.权利要求50的方法,其中所述两种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
52.一种互连结构,包括:
其上具有氧化物层的衬底,其中氧化物层具有形成在其内且到达衬底顶表面的孔;和
在衬底表面和氧化物层的部分上形成的第一硼化物层,其中第一硼化物层包括两种或者多种难熔金属;和
形成在第一硼化物层上的第二硼化物层,其中所述第二硼化物层包括一种或者多种难熔金属。
53.权利要求52的互连结构,其中所述一种或者多种难熔金属选自钛(Ti)、钨(W)、钒(V)、铌(Nb)、钽(Ta)、锆(Zr)、铪(Hf)、铬(Cr)和钼(Mo)。
54.权利要求52的互连结构,其中第一硼化物层具有小于大约100(埃)的厚度。
55.权利要求52的互连结构,其中第二硼化物层具有大约500-3000范围的厚度。
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- 2000-06-27 US US09/604,943 patent/US6620723B1/en not_active Expired - Fee Related
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- 2001-06-26 CN CN01812886A patent/CN1443366A/zh active Pending
- 2001-06-26 KR KR1020027017705A patent/KR20030017565A/ko not_active Application Discontinuation
- 2001-06-26 JP JP2002505674A patent/JP5210482B2/ja not_active Expired - Lifetime
- 2001-06-26 EP EP01950495A patent/EP1295331A2/en not_active Withdrawn
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2003
- 2003-03-13 US US10/387,990 patent/US6831004B2/en not_active Expired - Lifetime
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2004
- 2004-11-19 US US10/993,925 patent/US7208413B2/en not_active Expired - Fee Related
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- 2007-04-24 US US11/739,549 patent/US7501344B2/en not_active Expired - Fee Related
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101675514B (zh) * | 2007-05-04 | 2012-05-30 | 美光科技公司 | 钨数字线及形成和操作钨数字线的方法 |
TWI737693B (zh) * | 2016-04-21 | 2021-09-01 | 荷蘭商Asm智慧財產控股公司 | 金屬硼化物的沉積 |
CN112041980A (zh) * | 2018-04-20 | 2020-12-04 | 恩特格里斯公司 | 利用硼成核层的低温钼膜沉积 |
Also Published As
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US20050118804A1 (en) | 2005-06-02 |
WO2002001628A3 (en) | 2002-04-11 |
US7501344B2 (en) | 2009-03-10 |
EP1295331A2 (en) | 2003-03-26 |
US6620723B1 (en) | 2003-09-16 |
US20070197028A1 (en) | 2007-08-23 |
US6831004B2 (en) | 2004-12-14 |
US20070197027A1 (en) | 2007-08-23 |
JP5210482B2 (ja) | 2013-06-12 |
US7208413B2 (en) | 2007-04-24 |
WO2002001628A2 (en) | 2002-01-03 |
KR20030017565A (ko) | 2003-03-03 |
US7501343B2 (en) | 2009-03-10 |
US20040018723A1 (en) | 2004-01-29 |
JP2004502301A (ja) | 2004-01-22 |
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